CN110989287A - Photoetching mask and detection method thereof - Google Patents
Photoetching mask and detection method thereof Download PDFInfo
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- CN110989287A CN110989287A CN201911345460.7A CN201911345460A CN110989287A CN 110989287 A CN110989287 A CN 110989287A CN 201911345460 A CN201911345460 A CN 201911345460A CN 110989287 A CN110989287 A CN 110989287A
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- 238000001259 photo etching Methods 0.000 title claims abstract description 40
- 238000001514 detection method Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000002834 transmittance Methods 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 101
- 238000011161 development Methods 0.000 claims description 30
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 abstract description 43
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The application provides a photoetching mask and a detection method of the photoetching mask, and relates to the technical field of electronics. The photoetching mask plate comprises: the graphic layer comprises M graphic areas and N non-graphic areas arranged on the periphery of the graphic areas, wherein M is more than or equal to 1, and N is more than or equal to 1; wherein at least one of the N non-pattern regions comprises a light-transmitting portion for monitoring the light transmittance of the photolithography mask. In the embodiment of the application, the light-transmitting part is arranged in at least one of the N non-pattern areas of the photoetching mask plate, so that when the photoetching mask plate is used for exposing a substrate to be photoetched, a mark developing area corresponding to the light-transmitting part can be formed on the photosensitive layer of the substrate to be photoetched, and the light transmittance of the photoetching mask plate is measured through the mark developing area.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a photoetching mask and a detection method of the photoetching mask.
Background
The photoetching mask is a graphic master mask used by a photoetching process commonly used by a micro-nano processing technology. Generally, a photolithographic reticle transfers graphic information to a product substrate through an exposure process. However, the photolithographic mask is used for a period of time, and the problem that the pattern information transfer is not accurate enough occurs.
Therefore, how to ensure the precision of the pattern information transferred by the photolithography mask becomes an urgent problem to be solved.
Disclosure of Invention
In view of this, embodiments of the present application are directed to providing a photolithography mask and a method for detecting the photolithography mask, so as to solve the problem in the prior art that the transferred pattern information of the photolithography mask is not accurate enough.
An embodiment of the present application provides a lithographic mask, including: the graphic layer comprises M graphic areas and N non-graphic areas arranged on the periphery of the graphic areas, wherein M is more than or equal to 1, and N is more than or equal to 1; wherein at least one of the N non-pattern regions includes a light-transmitting portion.
In one embodiment of the present application, the light-transmitting portion includes a plurality of light-transmitting strips arranged in parallel; and a preset interval is reserved between every two adjacent light-transmitting strips.
In one embodiment of the present application, the photolithography mask further includes a light-transmissive substrate layer, and the pattern layer is disposed on one side of the light-transmissive substrate layer; the light-transmitting substrate layer comprises a first edge close to the light-transmitting part, and the arrangement direction of the parallel arrangement is vertical to the extension direction of the first edge.
In one embodiment of the present application, the plurality of light-transmitting strips includes a first light-transmitting strip and a second light-transmitting strip; when a first distance from the first light transmitting strip to the first edge is smaller than a second distance from the second light transmitting strip to the first edge, the length of the first light transmitting strip is smaller than that of the second light transmitting strip.
In one embodiment of the present application, the light-transmitting portion is disposed at a periphery of the M pattern regions.
In one embodiment of the present application, the photolithography mask further comprises a light-transmissive substrate layer and a protective layer protecting the pattern layer; the graphic layer is arranged on one side of the light-transmitting base material layer, and the protective layer is arranged on one side, far away from the light-transmitting base material layer, of the graphic layer.
In one embodiment of the present application, the photolithography reticle further includes a frame layer connecting the light-transmissive substrate layer and the protective layer; the frame layer comprises a plurality of frame units, and the frame units are respectively arranged on the periphery of the graph layer.
Another aspect of the embodiments of the present application provides a method for detecting a photolithography mask, including: irradiating a photosensitive layer of a substrate to be photoetched through a photomask according to any one of the first aspects; developing the exposed photosensitive layer to obtain a developing layer, wherein the developing layer comprises a mark developing area corresponding to the light-transmitting part; and determining the light transmittance of the photoetching mask plate according to the mark developing area.
In one embodiment of the present application, the mark developing area includes a plurality of developing bars arranged in parallel; wherein determining the light transmittance of the photolithographic reticle according to the mark development zone comprises: measuring the width of the developing strip to obtain a measured width; calculating a first difference between the measured width of the development bar and a preset width of the development bar; and when the first difference is larger than a first preset difference, determining that the light transmittance of the photoetching mask plate cannot reach a preset level.
In one embodiment of the present application, the mark developing area includes a plurality of developing bars arranged in parallel; wherein determining the light transmittance of the photolithographic reticle according to the mark development zone comprises: measuring the distance between two adjacent developing strips to obtain a measurement distance; calculating a second difference between the measurement interval and a preset interval; and when the second difference is larger than a second preset difference, determining that the light transmittance of the photoetching mask plate cannot reach a preset level.
In the embodiment of the application, the light-transmitting part is arranged in at least one of the N non-pattern areas of the photoetching mask plate, so that when the photoetching mask plate is used for exposing a substrate to be photoetched, a mark developing area corresponding to the light-transmitting part can be formed on the photosensitive layer of the substrate to be photoetched, and the light transmittance of the photoetching mask plate is measured through the mark developing area.
Drawings
FIG. 1 is a schematic block diagram of a photolithographic reticle according to one embodiment of the present application.
FIG. 2 is a schematic block diagram of a photolithographic reticle according to another embodiment of the present application.
FIG. 3a is a schematic block diagram of a photolithographic reticle according to yet another embodiment of the present application.
FIG. 3b is a bottom view of the photolithographic reticle shown in FIG. 3 a.
FIG. 4 is a schematic block diagram of a photolithographic reticle according to yet another embodiment of the present application.
FIG. 5 is a schematic flow chart of a method for inspection of a photolithographic reticle according to one embodiment of the present application.
FIG. 6 is a schematic block diagram of a lithography system according to one embodiment of the present application.
FIG. 7 is a schematic block diagram of a development layer according to one embodiment of the present application.
Fig. 8 is a schematic partial enlarged view of a mark developing region according to one embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Wherever possible, the same or similar parts in the drawings will be used with the same drawings transmitting parts.
As described in the background, a photolithographic reticle is a tool for transferring graphic information through an exposure process. Specifically, a preset pattern is arranged on the photoetching mask plate. When light irradiates the photosensitive layer of the substrate to be photoetched through the light transmission area on the photoetching mask plate, the photosensitive layer forms a photosensitive area according to the preset pattern, and the process of forming the photosensitive area is an exposure process.
In particular, the photolithographic reticle may include a patterning layer. The graphic layer may be provided with the preset graphics. In the graphic layer, a plurality of graphic regions may constitute the preset graphic, and the graphic regions may refer to regions through which light can pass. For example, the pattern region may refer to a through groove formed after the pattern layer is etched. The graphic layer comprises a graphic area and a non-graphic area arranged at the periphery of the graphic area, and the non-graphic area can be a light-shading area in the graphic layer. That is, the non-graphic areas do not allow light to pass through the graphic layer. The photoetching mask realizes the transfer of the preset pattern under the combined action of the pattern area and the non-pattern area.
However, the current photolithography mask has the problem that the pattern information transfer is not accurate enough after the current photolithography mask is used for a period of time. That is to say, there is a difference between the transferred pattern formed on the substrate to be subjected to photolithography and the preset pattern on the photolithography mask, and specifically, the area of the transferred pattern on the substrate to be subjected to photolithography is often smaller than the area of the preset pattern on the photolithography mask, so that the problem of inaccurate pattern information transfer occurs.
After analysis, the reason for the problem is that the light transmittance of the photoetching mask plate is abnormal. That is, the area of the photosensitive region formed on the photosensitive layer is smaller than the area of the predetermined pattern, so that the area of the transferred pattern formed on the substrate to be photoetched is smaller than the area of the predetermined pattern on the photomask. However, this area reduction occurs because the actual light transmittance of the photolithography mask is less than the predetermined light transmittance.
After microscopic observation, foreign matters for blocking light transmission appear on the photoetching mask. When the position of the foreign matters corresponds to the position of the preset pattern of the photoetching mask plate, the foreign matters can prevent light from transmitting through the photoetching mask plate, so that the area of the transfer pattern formed on the substrate to be photoetched is smaller than the area of the preset pattern on the photoetching mask plate.
Therefore, if the photoetching mask with the foreign matters can be identified in time, the problem that the photoetching mask is not accurate enough in pattern information transfer can be effectively solved.
FIG. 1 is a schematic block diagram of a photolithographic reticle according to one embodiment of the present application.
Based on this, embodiments of the present application provide a lithographic reticle. As shown in fig. 1, the photolithographic reticle may include a patterning layer 2. The graphics layer 2 may include M graphics regions 21 and N non-graphics regions 22 disposed at the periphery of the graphics regions 21, where M ≧ 1 and N ≧ 1. At least one of the N non-pattern regions 22 includes a light-transmitting portion 221.
Specifically, of the N non-pattern regions 22, two kinds of non-pattern regions 22 are included. One non-graphic region 22 may be disposed between two adjacent graphic regions 21, and the other non-graphic region 22 may be disposed between the graphic region 21 and an edge of the graphic layer 2. Under the cooperation of the M pattern areas 21 and the N non-pattern areas 22, the pattern layer 2 can transfer a predetermined pattern onto a substrate to be lithographed.
The light-transmitting portion 221 may refer to a light-transmitting region provided in the non-pattern region 22. That is, the photosensitive layer of the substrate to be lithographed forms a mark developing region corresponding to the light-transmitting portion 221. However, the light-transmitting portion 221 is not a component of the preset pattern. The light-transmitting portion 221 may better display the light transmittance of the photolithography mask than the pattern region 21, so that the light-transmitting portion 221 may be used to monitor the light transmittance of the photolithography mask. That is, the light-transmitting portion 221 and the mark developing area on the substrate to be photoetched can be compared, so as to measure the light transmittance of the photolithography mask. Of the N non-pattern regions 22, the number of the non-pattern regions 22 provided with the light-transmitting portion 221 may be one or more.
Here, in order to reduce the influence of the mark developing area on the transferred preset pattern on the substrate to be lithographed, the light-transmitting portion 221 may be preferably disposed outside the preset pattern of the pattern layer 2. For example, the light-transmitting portion 221 may be preferably disposed between the pattern region 21 and the edge of the pattern layer 2.
In the embodiment of the application, the light-transmitting portion 221 is arranged in at least one of the N non-pattern regions 22 of the photolithography mask, so that when the photolithography mask is used for exposing a substrate to be photolithography, a mark development region corresponding to the light-transmitting portion 221 can be formed on a photosensitive layer of the substrate to be photolithography, and further, the light transmittance of the photolithography mask is measured through the mark development region.
In one embodiment of the present application, as shown in fig. 1, the light-transmitting portion 221 is disposed at the periphery of the M pattern regions 21.
Specifically, it is observed that the foreign matter on the mask plate that blocks the transmission of light is concentrated near the edge of the mask plate. Therefore, in order to allow the foreign substances to block the light transmitted through the light-transmitting portion 221, the light-transmitting portion 221 may be disposed at a position where the foreign substances are relatively concentrated. That is, the light-transmitting portion 221 may be disposed in a region near the edge of the photolithography mask. The region near the edge of the photolithographic reticle may refer to the region at the periphery of the M pattern regions 21. Here, the M graphic regions 21 may be regarded as a whole.
In this embodiment, the light-transmitting portion 221 is disposed in a region where the light-blocking foreign matter is concentrated, so that the foreign matter can block the light transmitted through the light-transmitting portion 221, thereby improving the accuracy of monitoring the light transmittance of the photomask by the light-transmitting portion 221.
FIG. 2 is a schematic block diagram of a photolithographic reticle according to another embodiment of the present application.
In one embodiment of the present application, as shown in fig. 2, the light-transmitting portion 221 may include a plurality of light-transmitting strips 3 arranged in parallel, and a preset interval 4 may exist between two adjacent light-transmitting strips 3. Here, the light transmission stripe 3 may refer to a light transmission region in a stripe shape. For example, the light transmitting strip 3 may be rectangular in shape.
Specifically, it was observed that a plurality of foreign substances were in the form of stripes when they were concentrated on the photomask. Therefore, the light transmission portion 221 may have a stripe shape so as to correspond to the shape of the plurality of foreign substances having a stripe shape.
When the light-transmitting portion 221 is a single piece, the area of the light-transmitting portion 221 needs to be large to increase the probability that the light transmitted through the light-transmitting portion 221 is blocked by the foreign material. However, at the same time, light may pass through the periphery of the position where the foreign object blocks, thereby reducing the effect of blocking light by the foreign object.
To solve this problem, the light-transmitting portion 221 may be provided to include a plurality of light-transmitting strips 3, thereby ensuring that the foreign matter blocks the light transmitted through the light-transmitting portion 221. Meanwhile, due to the existence of the preset interval 4 between the two adjacent light transmission strips 3, in the extending direction perpendicular to the long edge of the light transmission strips 3, the size of the light transmission strips 3 is reduced, so that the probability that light passes through the periphery of the position blocked by the foreign matter is reduced, the blocking effect of the foreign matter on the light is further increased, and the accuracy of monitoring the light transmittance of the photomask by the light transmission strips 3 is improved.
Here, the extending direction of the long side of each light-transmitting strip 3 may be parallel to the extending direction of the long sides of the plurality of pieces of foreign matter in a strip shape, so that the plurality of light-transmitting strips 3 may be arranged in parallel. In this case, the plurality of pieces of foreign matter in the form of a bar may block the at least one light-transmitting bar 3.
FIG. 3a is a schematic block diagram of a photolithographic reticle according to yet another embodiment of the present application. FIG. 3b is a bottom view of the photolithographic reticle shown in FIG. 3 a.
In one embodiment of the present application, as shown in fig. 3a and 3b, the photolithography mask may further include a light-transmissive substrate layer 1, and the pattern layer 2 may be disposed on one side of the light-transmissive substrate layer 1. The light-transmitting substrate layer 1 may include a first side 111 near the light-transmitting portion 221, and an arrangement direction a of the parallel arrangement may be perpendicular to an extending direction b of the first side 111.
In particular, the light-transmissive substrate layer 1 may carry the graphics layer 2. The edge of the photolithographic reticle may be referred to as the edge 11 of the light-transmissive substrate layer 1. The light-transmitting portion 221 is disposed close to the edge of the photomask, that is, the light-transmitting portion 221 is disposed close to the edge 11 of the light-transmitting substrate layer 1. For example, when the light-transmissive substrate layer 1 has a rectangular shape, the edge 11 of the light-transmissive substrate layer 1 may include four sides. Accordingly, when the number of the light-transmitting portions 221 is plural, each light-transmitting portion 221 has a corresponding side close thereto. Here, the side where the light-transmitting portion 221 is close to may be the side closest to the light-transmitting portion 221. When each of the four sides of the rectangle has the light-transmitting portion 221 close, each of the four sides may be referred to as a first side 111.
It is observed that the direction of extension of the long sides of the plurality of foreign substances in a stripe shape is generally parallel to the direction of extension b of the first side 111. Therefore, in order to allow the shape of the light-transmitting strip 3 to correspond to the shape of the plurality of foreign substances in the form of a strip, the arrangement direction a of the plurality of light-transmitting strips 3 arranged in parallel may be perpendicular to the extending direction b of the first side 111.
In one embodiment of the present application, as shown in fig. 3a and 3b, the plurality of light-transmitting strips 3 may include a first light-transmitting strip 31 and a second light-transmitting strip 32. When a first distance from the first light transmitting strip 31 to the first edge 111 is less than a second distance from the second light transmitting strip 32 to the first edge 111, the length of the first light transmitting strip 31 is less than the length of the second light transmitting strip 32.
Specifically, any two light-transmitting strips 3 of the plurality of light-transmitting strips 3 may be referred to as a first light-transmitting strip 31 and a second light-transmitting strip 32, respectively. It is observed that, for the first light-transmitting strip 31 and the second light-transmitting strip 32, the foreign matter is more likely to gather at the corresponding position of the first light-transmitting strip 31. Under such a condition, when setting up the length of first light transmission strip 31 to be less than the length of second light transmission strip 32, light is more difficult to pass through first light transmission strip 31 to the degree of accuracy of the monitoring of the light transmittance of photomask version of first light transmission strip 31 has effectively been increased.
FIG. 4 is a schematic block diagram of a photolithographic reticle according to yet another embodiment of the present application.
In one embodiment of the present application, as shown in fig. 4, the photolithography reticle may further include a light-transmissive substrate layer 1 and a protective layer 5 protecting the pattern layer 2. The pattern layer 2 may be disposed on one side of the light-transmitting substrate layer 1, and the protective layer 5 may be disposed on one side of the pattern layer 2 away from the light-transmitting substrate layer 1.
Specifically, in order to avoid the graph layer 2 from being damaged by external force, two opposite sides of the graph layer 2 may be respectively disposed between the transparent substrate layer 1 and the protective layer 5, so as to effectively protect the integrity of the preset graph of the graph layer 2.
In one embodiment of the present application, as shown in fig. 4, the photolithography reticle may further include a frame layer 6 connecting the light-transmissive substrate layer 1 and the protective layer 5. The frame layer 6 may include a plurality of frame units 61, and the plurality of frame units 61 are respectively disposed at the periphery of the graphic layer 2.
Specifically, in the case where there is a space between the protective layer 5 and the pattern layer 2, in order to fix the protective layer 5, a frame layer 6 supporting the protective layer 5 may be provided on the light-transmitting substrate layer 1. Here, the plurality of frame units 61 may be connected to each other or may be independent of each other. In the case where a plurality of frame units 61 are connected to each other, two adjacent frame units 61 may be completely connected or may be partially connected. When two adjacent frame units 61 are completely connected, the light-transmitting substrate layer 1, the frame layer 6 and the protective layer 5 may form a closed space, and the graphic layer 2 is located in the closed space, thereby realizing the all-dimensional protection of the graphic layer 2.
The photolithography reticle according to the embodiment of the present application is described above, and the inspection method of the photolithography reticle according to the embodiment of the present application is described below with reference to fig. 5 to 8.
FIG. 5 is a schematic flow chart of a method for inspection of a photolithographic reticle according to one embodiment of the present application. FIG. 6 is a schematic block diagram of a lithography system according to one embodiment of the present application. FIG. 7 is a schematic block diagram of development layer 104, according to one embodiment of the present application.
As shown in FIG. 5, the method for inspecting the reticle 100 may include the following steps.
Here, the photolithography mask 100 may be the photolithography mask described in any of the above embodiments. Specifically, as shown in FIG. 6, a photolithography reticle 100 may be placed between a light source apparatus and a substrate 102 to be lithographed. When the light source apparatus emits light 101, the light 101 may pass through a light-transmitting region of the photolithography mask 100 and irradiate on a photosensitive layer 103 of a substrate 102 to be lithographed. The process of irradiating the photosensitive layer 103 with the light 101 is an exposure process.
In step 520, the exposed photosensitive layer 103 is developed to obtain a developing layer 104, wherein the developing layer 104 includes a mark developing area 105 corresponding to the light-transmitting portion 221.
Specifically, the exposed photosensitive layer 103 is dissolved in a developing solution to obtain a developed layer 104, as shown in fig. 7. The process of the developer dissolving the exposed photosensitive layer 103 may be referred to as development.
It is to be understood that when the foreign substance completely blocks the light-transmitting portion 221, the mark developing region 105 will not exist.
At step 530, the light transmittance of the reticle 100 is determined based on the mark development zone 105.
Specifically, the light transmittance of the photolithographic reticle 100 may be determined by comparing the mark development area 105 with the corresponding light-transmitting portion 221. When the difference between the mark development area 105 and the corresponding light transmission portion 221 is within a preset range, the photolithography mask 100 is determined to be free from foreign matter influence. When the difference between the mark developing area 105 and the corresponding light transmission part 221 exceeds a preset range, the photoetching mask 100 is determined to have the influence of foreign matters, namely the photoetching mask 100 has the problem that the pattern information transfer is not accurate enough.
In the embodiment of the application, the light-transmitting portion 221 is disposed in at least one of the N non-pattern regions 22 of the photolithography mask 100, so that when the photolithography mask 100 is used for exposing the substrate 102 to be lithographed, the mark developing region 105 corresponding to the light-transmitting portion 221 may be formed on the photosensitive layer 103 of the substrate 102 to be lithographed, and further the light transmittance of the photolithography mask 100 is measured through the mark developing region 105.
Fig. 8 is a schematic partially enlarged view of the mark developing region 105 according to one embodiment of the present application.
In particular, for graphics layer 2 as shown in fig. 3b, the resulting mark development area 105 may be as shown in fig. 8. There may be a corresponding development bar 106 for each light-transmitting bar 3. The size of the development bar 106 in the arrangement direction of the parallel arrangement of the plurality of development bars 106 may be referred to as the width of the development bar 106. Accordingly, in the arrangement direction a of the parallel arrangement of the plurality of light-transmitting bars 3, the size of the light-transmitting bar 3 may be referred to as the width of the light-transmitting bar 3.
When the width of the light transmission strip 3 is less than or equal to the width of the shape of the plurality of strip-shaped foreign matters, the light rays 101 penetrating through the light transmission strip 3 are easily blocked by the plurality of strip-shaped foreign matters. In such a case, the development bar 106 may not be present. Accordingly, the light transmittance of the reticle 100 can be determined by directly observing the presence of the developing stripes 106. When the developing strip 106 is not present, it can be determined that the photolithography mask 100 has the influence of foreign matters, that is, the photolithography mask 100 has the problem that the pattern information transfer is not accurate enough. When the development bar 106 is present, the development bar 106 may assume a discontinuous state. In such a case, the light transmittance of the reticle 100 can also be determined by directly observing whether the development stripes 106 are continuous. When the developing strip 106 is discontinuous, it can be determined that the photolithography mask 100 has a foreign matter effect, i.e., the photolithography mask 100 has a problem that the pattern information transfer is not accurate enough.
When the width of the light-transmitting strip 3 is larger than the width of the shape of the plurality of strip-shaped foreign substances, the light 101 transmitted through the light-transmitting strip 3 cannot be completely blocked by the plurality of strip-shaped foreign substances. In such a case, the light transmittance of lithographic reticle 100 can be determined in two ways.
In one embodiment of the present application, as shown in fig. 7 or 8, the mark developing region 105 may include a plurality of developing bars 106 arranged in parallel. Step 530 may specifically include: measuring the width of the development strip 106 to obtain a measured width W1; calculating a first difference between the measured width W1 of the display bar 106 and the preset width of the display bar 106 as shown; and when the first difference is larger than the first preset difference, determining that the light transmittance of the photoetching mask 100 cannot reach a preset level, namely determining that the photoetching mask 100 has the influence of foreign matters, and the photoetching mask 100 has the problem that the graph information transfer is not accurate enough.
In another embodiment of the present application, as shown in fig. 7 or 8, the mark developing region 105 may include a plurality of developing bars 106 arranged in parallel. Step 530 may specifically include: measuring the distance between two adjacent developing strips 106 to obtain a measurement distance W2; calculating a second difference between the measured spacing W2 and the preset spacing; and when the second difference is larger than the second preset difference, determining that the light transmittance of the photoetching mask 100 cannot reach a preset level, namely determining that the photoetching mask 100 has the influence of foreign matters, and the photoetching mask 100 has the problem that the graph information transfer is not accurate enough.
Here, the preset width and the preset pitch are determined by the relative size of the light-transmitting portion 221.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modifications, equivalents and the like that are within the spirit and principle of the present application should be included in the scope of the present application.
Claims (10)
1. A lithographic reticle, comprising:
the graphic layer comprises M graphic areas and N non-graphic areas arranged on the periphery of the graphic areas, wherein M is more than or equal to 1, and N is more than or equal to 1;
wherein at least one of the N non-pattern regions includes a light-transmitting portion.
2. The lithographic reticle of claim 1, wherein the light-transmissive portion comprises a plurality of light-transmissive strips arranged in parallel;
and a preset interval is reserved between every two adjacent light-transmitting strips.
3. The lithographic reticle of claim 2, further comprising a light-transmissive substrate layer, the pattern layer being disposed on one side of the light-transmissive substrate layer;
the light-transmitting substrate layer comprises a first edge close to the light-transmitting part, and the arrangement direction of the parallel arrangement is vertical to the extension direction of the first edge.
4. The lithographic reticle of claim 3, wherein the plurality of light-transmissive strips comprises a first light-transmissive strip and a second light-transmissive strip;
when a first distance from the first light transmitting strip to the first edge is smaller than a second distance from the second light transmitting strip to the first edge, the length of the first light transmitting strip is smaller than that of the second light transmitting strip.
5. The reticle of claim 1, wherein the light-transmissive portion is disposed at a periphery of the M pattern regions.
6. The lithographic reticle of claim 1, further comprising a light-transmissive substrate layer and a protective layer protecting the pattern layer;
the graphic layer is arranged on one side of the light-transmitting base material layer, and the protective layer is arranged on one side, far away from the light-transmitting base material layer, of the graphic layer.
7. The lithographic reticle of claim 6, further comprising a frame layer connecting the light-transmissive substrate layer and the protective layer;
the frame layer comprises a plurality of frame units, and the frame units are respectively arranged on the periphery of the graph layer.
8. A detection method of a photoetching mask is characterized by comprising the following steps:
irradiating a photosensitive layer of a substrate to be lithographed through the photolithographic reticle of any of claims 1-7;
developing the exposed photosensitive layer to obtain a developing layer, wherein the developing layer comprises a mark developing area corresponding to the light-transmitting part; and
and determining the light transmittance of the photoetching mask plate according to the mark developing area.
9. The detection method according to claim 8, wherein the mark development region includes a plurality of development bars arranged in parallel;
wherein determining the light transmittance of the photolithographic reticle according to the mark development zone comprises:
measuring the width of the developing strip to obtain a measured width;
calculating a first difference between the measured width of the development bar and a preset width of the development bar; and
and when the first difference is larger than a first preset difference, determining that the light transmittance of the photoetching mask plate cannot reach a preset level.
10. The detection method according to claim 8, wherein the mark development region includes a plurality of development bars arranged in parallel;
wherein determining the light transmittance of the photolithographic reticle according to the mark development zone comprises:
measuring the distance between two adjacent developing strips to obtain a measurement distance;
calculating a second difference between the measurement interval and a preset interval; and
and when the second difference is larger than a second preset difference, determining that the light transmittance of the photoetching mask plate cannot reach a preset level.
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| WO2021204024A1 (en) * | 2020-04-10 | 2021-10-14 | 长鑫存储技术有限公司 | Mask plate and method for testing quality of mask plate |
| CN113504711A (en) * | 2021-06-28 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Detection method for photoetching development |
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