CN101498896A - Monitoring structure and mask plate comprising the same, and its use method - Google Patents
Monitoring structure and mask plate comprising the same, and its use method Download PDFInfo
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- CN101498896A CN101498896A CNA2008100332567A CN200810033256A CN101498896A CN 101498896 A CN101498896 A CN 101498896A CN A2008100332567 A CNA2008100332567 A CN A2008100332567A CN 200810033256 A CN200810033256 A CN 200810033256A CN 101498896 A CN101498896 A CN 101498896A
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Abstract
The present invention relates to a mask of a monitoring structure and a utility method thereof. The length and width of the monitoring structure are smaller than that of a cutting area of a cutting channel; and the key size band and aligning marks are the same with the monitoring structure in orientation. The mask comprises one or more than one monitoring structures. The utility method of the monitoring structure comprises the following steps: a. arranging the monitoring structure in the mask; b. copying the monitoring structure into crystals by exposure technique; and c. cutting the monitoring structure which is copied in the crystals, and the cutting area of the cutting channel covers the monitoring structure. The present invention can rid metal residues in the process of monitoring structure cutting.
Description
Technical field
The present invention relates to the semiconductor lithography technology field, particularly a kind of monitoring of structures and comprise the mask and the using method thereof of monitoring of structures.
Background technology
Will carry out repeatedly lithography step in integrated circuit fabrication process, the quality of photoetching quality directly influences product percent of pass.Therefore, monitoring of structures (Frame Cell) need be set usually and detect photoetching quality.Monitoring of structures be arranged on chip product on the wafer around, cut away in the lump when treating the chip cutting encapsulation.
With reference to Fig. 1, existing monitoring of structures 1 has comprised critical size bar (CD bar, criticaldimension bar) 3, layer alignment mark (overlay mark) 4 and formation alignment mark (alignmentmark) 5.Wherein, described critical size bar 3, layer alignment mark 4 arranged along the direction vertical with monitoring of structures with formation alignment mark 5.Perhaps, described critical size bar 3, layer alignment mark 4 and formation alignment mark 5 are arranged in the right and left of monitoring of structures 3.
Monitoring of structures is set on the mask with the product figure, copies on the wafer by the optical semiconductor carving technology, and finishes subsequent technique with product chips, needs to cut away from wafer when treating the chip cutting encapsulation.With reference to Fig. 2, the size of conventional semiconductor wafer cutting path is generally between 80～120um, and process-monitor template 1 is generally the figure of width less than 80um.Though the width of Cutting Road also is more than the 80 μ m, the actual peak width that cuts away 2 is 40um～60um.As shown in Figure 2, the residual monitoring of structures of part on the chip product of cutting back, and might contain metal in the figure that residual part technology detects.
When using for a long time or carry out the aging life-span test, electromigration can take place in these metals that remain on the Cutting Road, causes short circuit between the adjacent pad on the chip product, thereby causes scrapping of chip.
Summary of the invention
The objective of the invention is, a kind of monitoring of structures is provided and comprises the mask and the using method thereof of monitoring of structures, can make the Cutting Road of the semiconductor wafer after the cutting keep clean no metal residue.
A first aspect of the present invention provides a kind of monitoring of structures that is used to monitor the optical semiconductor carving technology, it is characterized in that, the pattern of described monitoring of structures comprise following multinomial:
-one or more critical size bars,
-one or more alignment marks,
The pattern width of described monitoring of structures is smaller or equal to the width of Cutting Road cutting zone.
A second aspect of the present invention provides a kind of mask, it is characterized in that, described mask comprises one or more as monitoring of structures that first aspect present invention provided.
A third aspect of the present invention provides a kind of using method of monitoring of structures, it is characterized in that comprising the steps:
C. cut away be replicated on the wafer as monitoring of structures that first aspect present invention provided.
Because monitoring of structures width of the present invention is less than the Cutting Road cutting zone, and described Cutting Road cutting zone has covered monitoring of structures during cutting, therefore can excise monitoring of structures fully, eliminate the metal residual problem of not exclusively bringing by the monitoring of structures pattern cut.
Description of drawings
By reading the following detailed description of doing with reference to accompanying drawing to non-limiting example, other features, objects and advantages of the present invention will become more obvious.
Fig. 1 is the structural representation to existing monitoring of structures;
Fig. 2 is the synoptic diagram of the existing monitoring of structures of cutting;
Fig. 3 is the structural representation of the monitoring of structures of the embodiment of the invention one;
Fig. 4 is the synoptic diagram of the monitoring of structures of the cutting embodiment of the invention one;
Fig. 5 is the structural representation of the monitoring of structures of the embodiment of the invention two;
Fig. 6 is the synoptic diagram of the monitoring of structures of the cutting embodiment of the invention two;
Fig. 7 is a flow chart of steps of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further detail.
[embodiment 1]
In the present embodiment, the width of Cutting Road cutting zone is 45um, and the width of monitoring of structures is 40um, and promptly the width of monitoring of structures is less than the width of Cutting Road cutting zone.
A first aspect of the present invention provides a kind of monitoring of structures.With reference to Fig. 3, monitoring of structures 11 of the present invention has comprised 3, one 4 and formation alignment marks of layer alignment mark (overlay mark) (alignment mark) 5 of a critical size bar (CD bar, critical dimension bar).Wherein, described critical size bar 3, layer alignment mark 4 arranged along the direction parallel with monitoring of structures with formation alignment mark 5.
A second aspect of the present invention provides a kind of mask, and described mask comprises the monitoring of structures that one or more a first aspect of the present invention provides.
With reference to Fig. 7, a third aspect of the present invention provides a kind of using method of monitoring of structures, comprises the steps:
In step S1, monitoring of structures is arranged on the mask;
In step S2, described monitoring of structures is copied on the wafer by exposure technology;
In step S3, cut away the described monitoring of structures that is replicated on the wafer, wherein the Cutting Road cutting zone covers described monitoring of structures.
With reference to Fig. 4, because in the present embodiment, the width of Cutting Road cutting zone is 45um, and the width of monitoring of structures is 40um.And, the critical size bar 3 of monitoring of structures, layer alignment mark 4 arranged along the direction parallel with monitoring of structures with formation alignment mark 5.Therefore, monitoring of structures drops in the Cutting Road cutting zone fully, and monitoring of structures is residual on the chip product after the cutting, can not cause the chip rejection that causes owing to metal residual.
[embodiment two]
In the present embodiment, the width of Cutting Road cutting zone is 60um, and the width of monitoring of structures is 80um, and the width of monitoring of structures pattern is 30um, and promptly the width of monitoring of structures pattern is less than the width of Cutting Road cutting zone.
A first aspect of the present invention provides a kind of monitoring of structures.With reference to Fig. 5, the pattern of monitoring of structures 12 of the present invention has comprised 3, one 4 and formation alignment marks of layer alignment mark (overlay mark) (alignment mark) 5 of a critical size bar (CD bar, critical dimension bar).Wherein, described critical size bar 3, layer alignment mark 4 arranged along the direction parallel with monitoring of structures with formation alignment mark 5.
Further, with reference to Fig. 5, the width of monitoring of structures pattern is less than Cutting Road cutting zone 22, but the width of monitoring of structures 12 is greater than the width of Cutting Road cutting zone 22.
A second aspect of the present invention provides a kind of mask, and described mask comprises the monitoring of structures that one or more a first aspect of the present invention provides.
With reference to Fig. 7, a third aspect of the present invention provides a kind of using method of monitoring of structures, comprises the steps:
In step S1, monitoring of structures is arranged on the mask;
In step S2, described monitoring of structures is copied on the wafer by exposure technology;
In step S3, cut away the described monitoring of structures that is replicated on the wafer, wherein the Cutting Road cutting zone covers described monitoring of structures.
With reference to Fig. 6, because in the present embodiment, the width of Cutting Road cutting zone is 60um, and the width of monitoring of structures pattern is 30um.Though the width of monitoring of structures still can be with the pattern excision of monitoring of structures greater than the width of Cutting Road cutting zone.Therefore it is residual also not have monitoring of structures on the chip product after the cutting, can not cause the chip rejection that causes owing to metal residual.
Further, mask and the using method thereof the monitoring of structures that provides in the present embodiment being provided and comprising this monitoring of structures, those skilled in the art should know, no matter the monitoring of structures pattern is done any arrangement, as long as the width of monitoring pattern is less than the width of Cutting Road cutting zone, described monitoring pattern can both be excised fully.As for the cutting method of other monitoring patterns, those skilled in the art can use in the present invention without creative work.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the appended claims.
Claims (6)
1. a monitoring of structures that is used to monitor the optical semiconductor carving technology is characterized in that, the pattern of described monitoring of structures comprise following multinomial:
-one or more critical size bars,
-one or more alignment marks,
The pattern width of described monitoring of structures is smaller or equal to the width of Cutting Road cutting zone.
2. structure as claimed in claim 1 is characterized in that: described critical size bar and described alignment mark are arranged according to vertical direction.
3. structure as claimed in claim 1 or 2 is characterized in that: the width of described monitoring of structures is smaller or equal to the width of Cutting Road cutting zone.
4. mask, it is characterized in that: described mask comprises one or more as each described monitoring of structures of claim 1 to 3.
5. the using method of a monitoring of structures is characterized in that comprising the steps:
C. cut away be replicated on the wafer as each described monitoring of structures of claim 1 to 3.
6. using method as claimed in claim 5 is characterized in that, also comprises before described step b:
A. monitoring of structures is arranged on the mask;
B. by exposure technology described monitoring of structures is copied on the wafer;
Wherein, described step c is:
After waiting to finish monitoring, cut away the described monitoring of structures that is replicated on the wafer, wherein the Cutting Road cutting zone covers described monitoring of structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332567A CN101498896A (en) | 2008-01-29 | 2008-01-29 | Monitoring structure and mask plate comprising the same, and its use method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332567A CN101498896A (en) | 2008-01-29 | 2008-01-29 | Monitoring structure and mask plate comprising the same, and its use method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101498896A true CN101498896A (en) | 2009-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332567A Pending CN101498896A (en) | 2008-01-29 | 2008-01-29 | Monitoring structure and mask plate comprising the same, and its use method |
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| CN (1) | CN101498896A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292175A (en) * | 2016-09-30 | 2017-01-04 | 上海华虹宏力半导体制造有限公司 | Litho machine detection mask plate |
| CN107045259A (en) * | 2016-02-05 | 2017-08-15 | 中芯国际集成电路制造(上海)有限公司 | Include the mask plate and monitoring method of monitoring figure |
| CN108628090A (en) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Photomask data detection method, monitoring of structures and mask plate |
| CN110989287A (en) * | 2019-12-23 | 2020-04-10 | 合肥维信诺科技有限公司 | Photoetching mask and detection method thereof |
| CN112180691A (en) * | 2020-09-30 | 2021-01-05 | 上海华力集成电路制造有限公司 | On-line monitoring method for spliced chips |
| CN113611622A (en) * | 2021-07-07 | 2021-11-05 | 华虹半导体(无锡)有限公司 | Online monitoring method for photoetching conditions and mask |
| WO2023240672A1 (en) * | 2022-06-13 | 2023-12-21 | 长鑫存储技术有限公司 | Region analysis method and device for scribe line pattern |
-
2008
- 2008-01-29 CN CNA2008100332567A patent/CN101498896A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107045259A (en) * | 2016-02-05 | 2017-08-15 | 中芯国际集成电路制造(上海)有限公司 | Include the mask plate and monitoring method of monitoring figure |
| CN107045259B (en) * | 2016-02-05 | 2020-06-09 | 中芯国际集成电路制造(上海)有限公司 | Mask plate containing monitoring pattern and monitoring method |
| CN106292175A (en) * | 2016-09-30 | 2017-01-04 | 上海华虹宏力半导体制造有限公司 | Litho machine detection mask plate |
| CN108628090A (en) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Photomask data detection method, monitoring of structures and mask plate |
| CN110989287A (en) * | 2019-12-23 | 2020-04-10 | 合肥维信诺科技有限公司 | Photoetching mask and detection method thereof |
| CN112180691A (en) * | 2020-09-30 | 2021-01-05 | 上海华力集成电路制造有限公司 | On-line monitoring method for spliced chips |
| CN112180691B (en) * | 2020-09-30 | 2024-01-09 | 上海华力集成电路制造有限公司 | On-line monitoring method for spliced chip |
| CN113611622A (en) * | 2021-07-07 | 2021-11-05 | 华虹半导体(无锡)有限公司 | Online monitoring method for photoetching conditions and mask |
| WO2023240672A1 (en) * | 2022-06-13 | 2023-12-21 | 长鑫存储技术有限公司 | Region analysis method and device for scribe line pattern |
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Open date: 20090805 |