CN110970526B - Manufacturing method of low-melting-point metal device and manufacturing method of solar cell - Google Patents
Manufacturing method of low-melting-point metal device and manufacturing method of solar cell Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a manufacturing method of a low-melting-point metal device and a manufacturing method of a solar cell, and relates to the technical field of low-melting-point metals. The manufacturing method of the low-melting-point metal device provided by the invention comprises the following steps: providing a substrate and a packaging film; forming a low melting point metal pattern on a substrate using a low melting point metal; cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern; covering the packaging film on the surface of the substrate on which the low-melting-point metal pattern is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern; and heating the low-melting-point metal pattern to room temperature, and melting the low-melting-point metal pattern to obtain the low-melting-point metal device. The technical scheme of the invention can solve the problem that the low-melting-point metal pattern is deformed or damaged due to overflow of the low-melting-point metal when the low-melting-point metal pattern is packaged by using the packaging film.
Description
Technical Field
The invention relates to the technical field of low-melting-point metals, in particular to a manufacturing method of a low-melting-point metal device and a manufacturing method of a solar cell.
Background
The low-melting-point metal has the melting point lower than 300 ℃, has the advantages of good electrical conductivity, low melting point, good thermal conductivity and the like, and becomes a new functional material which develops rapidly in recent years. In the process of applying the low-melting-point metal, after the low-melting-point metal pattern is manufactured on the substrate, the low-melting-point metal pattern is generally required to be encapsulated so as to effectively protect the low-melting-point metal pattern and improve the stability of the low-melting-point metal device.
At present, the commonly used packaging methods include the following:
first, an uncured PDMS or silicone material is filled on a substrate on which a low melting point metal pattern is formed, and the encapsulant is cured by high temperature or natural curing. This method requires a long wait time, and package thickness and uniformity are difficult to ensure.
Second, an uncured photocurable resin is filled on a substrate on which a low-melting metal pattern is formed, and the photocurable resin is cured by irradiation with ultraviolet light. Although this method is time-saving, package thickness and uniformity are still difficult to guarantee.
And thirdly, packaging by using a packaging film to be attached to the substrate. The method can well solve the problems of packaging thickness and uniformity, and the packaging speed is high.
However, the inventors have found that the third encapsulation method still has problems, for example, in that for a low melting point metal having a low melting point, which is in a liquid state at room temperature or in a high temperature state in the encapsulation process, the bonding of the encapsulation film and the substrate requires pressurization, and the pressurization may cause the low melting point metal in the liquid state to overflow, thereby causing deformation or destruction of the low melting point metal pattern.
Disclosure of Invention
The invention provides a manufacturing method of a low-melting-point metal device and a manufacturing method of a solar cell, which can solve the problem that when a packaging film is used for packaging a low-melting-point metal pattern, the low-melting-point metal overflows to cause deformation or damage of the low-melting-point metal pattern.
In a first aspect, the invention provides a method for manufacturing a low-melting-point metal device, which adopts the following technical scheme:
the manufacturing method of the low-melting-point metal device comprises the following steps:
step S1, providing a substrate and a packaging film;
step S2 of forming a low melting point metal pattern on the base material using a low melting point metal having a melting point lower than room temperature;
step S3, cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern;
step S4, covering the packaging film on the surface of the substrate on which the low-melting-point metal pattern is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal;
and step S5, heating the low-melting-point metal pattern to room temperature, and melting the low-melting-point metal pattern to obtain the low-melting-point metal device.
Optionally, in the step S3, the low melting point metals in the low melting point metal pattern are solidified simultaneously.
Alternatively, the base material on which the low melting point metal pattern is formed is placed on a cooling stage, and the low melting point metal pattern is subjected to cooling treatment.
Alternatively, the base material on which the low melting point metal pattern is formed is placed on a stage, and a plate-shaped cooling device is brought into contact with the low melting point metal pattern to perform cooling treatment on the low melting point metal pattern.
Optionally, in step S4, the cooling device applies pressure to the packaging film and/or the substrate by means of static pressure.
Alternatively, in step S3, the low melting point metal pattern includes N regions arranged in sequence along the first direction, and the low melting point metal in the 1 st to N regions is sequentially solidified by sequentially performing cooling processing on the 1 st to N regions.
Optionally, the base material on which the low melting point metal pattern is formed is placed on an operation table, a roller-shaped or strip-shaped cooling device is sequentially contacted with the 1 st to N th regions, and the 1 st to N th regions are cooled, so that the low melting point metal in the 1 st to N th regions is sequentially solidified.
Optionally, in the step S4, applying pressure to the encapsulation film and/or the base material by rolling through a roller-shaped cooling device along the first direction; alternatively, in step S4, a strip-shaped cooling device applies pressure to the packaging film and/or the substrate by sliding pressure along the first direction.
Optionally, in the step S3, a temperature difference Δ T between the temperature T1 of the cooling process and the melting point T2 of the low melting point metal satisfies: and delta T is T2-T1, and delta T is 10-20 ℃.
Optionally, the method for manufacturing a low melting point metal device further includes fixing an electronic component on the low melting point metal pattern between the step S2 and the step S3.
In a second aspect, the present invention provides a method for manufacturing a solar cell, which adopts the following technical scheme:
the manufacturing method of the solar cell comprises the following steps:
forming a thin film battery on a substrate;
forming a bus line on the substrate on which the thin film battery is formed, using a low melting point metal having a melting point lower than room temperature;
cooling the bus bar to solidify the low-melting-point metal in the bus bar;
covering a packaging film on one surface of the substrate, on which the bus bar is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the bus bar, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal;
and heating the bus bar to room temperature, and melting the bus bar to obtain the solar cell.
Optionally, the bus bar comprises a low-melting-point metal line, the low-melting-point metal line is in any shape, and one end of the low-melting-point metal line extends to the outside of the solar cell;
or the bus line comprises a plurality of low-melting-point metal lines, each low-melting-point metal line is in any shape, the low-melting-point metal lines are mutually separated, and one end of each low-melting-point metal line extends to the outside of the solar cell;
or the bus line comprises a plurality of low-melting-point metal lines, each low-melting-point metal line is in any shape, at least two low-melting-point metal lines are connected with each other through a connecting line, and one end of the connecting line extends to the outside of the solar cell.
The invention provides a manufacturing method of a low-melting-point metal device and a manufacturing method of a solar cell, wherein the manufacturing method of the low-melting-point metal device comprises the following steps: firstly, providing a substrate and a packaging film, then using low-melting-point metal to form a low-melting-point metal pattern on the substrate, wherein the melting point of the low-melting-point metal is lower than room temperature, then cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern, then covering the packaging film on one surface of the substrate on which the low-melting-point metal pattern is formed, applying pressure on the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal, and finally heating the low-melting-point metal pattern to room temperature to melt the low-melting-point metal pattern, thereby obtaining the low-melting-point metal. The temperature in the packaging process is lower than the melting point of the low-melting-point metal, so that the low-melting-point metal is in a solid state and does not have fluidity in the packaging process, and the problem that the low-melting-point metal is deformed or damaged due to overflow of the low-melting-point metal when the packaging film is used for packaging the low-melting-point metal pattern can be solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart of a method for fabricating a low melting point metal device according to an embodiment of the present invention;
FIG. 2 is a flow chart of forming a low melting point metal pattern on a substrate according to an embodiment of the present invention;
FIG. 3 is a first schematic diagram of a bus bar according to an embodiment of the present invention;
fig. 4 is a second schematic diagram of a bus bar according to an embodiment of the invention;
fig. 5 is a third schematic diagram of a bus bar according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the technical features in the embodiments of the present invention may be combined with each other without conflict.
An embodiment of the present invention provides a method for manufacturing a low melting point metal device, and specifically, as shown in fig. 1, fig. 1 is a flowchart of a method for manufacturing a low melting point metal device according to an embodiment of the present invention, where the method for manufacturing a low melting point metal device includes:
step S1, a substrate and a packaging film are provided.
Alternatively, the substrate is a substrate to which a low melting point metal is not adhered, for example, one of printing paper, cardboard, kraft paper, coated paper, aramid paper, copper foil, iron foil, polyethylene film, polycarbonate sheet, polyimide film, polytetrafluoroethylene sheet, cotton cloth, hemp cloth, silk cloth, polyester cloth, polyamide cloth, polypropylene cloth, viscose cloth, dust-free cloth, acetate cloth, and release paper.
Alternatively, the substrate is a substrate to which a low melting point metal is adhered, for example, one of a polyvinyl chloride substrate, a polyethylene terephthalate substrate, a polybutylene terephthalate substrate, a polypropylene substrate, a polybutylene adipate-terephthalate substrate, a silicone rubber substrate, a natural rubber substrate, an isoprene rubber substrate, a styrene butadiene rubber substrate, a chloroprene rubber substrate, an ethylene propylene rubber substrate, a nitrile butadiene rubber substrate, a silicone rubber substrate, a polysulfide rubber substrate, a glass substrate, a polyvinyl chloride substrate, an acryl substrate, a stainless steel substrate, a silicon substrate, and nylon cloth.
Alternatively, the sealing film is a composite film of a plastic layer (e.g., PET) and a resin layer, a composite film of a plastic layer (e.g., PET) and an adhesive layer, a plastic film (e.g., a cling film), a rubber film or a room-temperature solid adhesive film, a solid metal film (e.g., a copper film, an iron film, or the like), a polyethylene film, a polycarbonate film, a polyimide film, a polytetrafluoroethylene film, or the like. The packaging film with the above materials can be divided into a hot pressing film, a cold laminating film, an electrostatic adsorption film and the like according to different packaging processes, and can be selected by a person skilled in the art according to actual requirements.
It should be noted that whether the substrate adheres to the low melting point metal can be determined by: the base material is obliquely placed on a test bench, the inclination angle of the base material is 20 degrees, so that low-melting metal droplets (the volume is 80-120 mu L, in the case of 80 mu L) are dropped onto the base material from a certain height (2-5 cm, in the case of 2 cm), if no low-melting metal remains on the base material, the base material is not adhered with the low-melting metal, and if the low-melting metal remains on the base material, the base material is adhered with the low-melting metal.
Step S2, forming a low melting point metal pattern on the substrate using a low melting point metal, the melting point of the low melting point metal being lower than room temperature.
In the embodiments of the present invention, the low melting point metal pattern is formed on the substrate by different methods according to different adhesion degrees of the substrate to the low melting point metal, and the embodiments of the present invention will be described in the following.
Optionally, when the low melting point metal device includes an electronic component (e.g., a resistor, a capacitor, a chip, a sensor, an LED, a touch switch, etc.), the method for manufacturing the low melting point metal device in the embodiment of the invention further includes fixing the electronic component on the low melting point metal pattern between steps S2 and S3, where the low melting point metal in the low melting point metal pattern formed in step S2 is in a liquid state, the pins of the electronic component may be immersed in the low melting point metal, and the electrical connection between the low melting point metal and the electronic component is better.
And step S3, cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern.
If the temperature difference Δ T between the temperature T1 of the cooling process and the melting point T2 of the low melting point metal is too small, the cooling process may be slow, and the cooling process may be inefficient, and if the temperature difference Δ T between the temperature T1 of the cooling process and the melting point T2 of the low melting point metal is too large, the cooling process may adversely affect the low melting point metal pattern. Therefore, the temperature difference Δ T between the temperature T1 of the cooling process and the melting point T2 of the low melting point metal needs to be properly selected, and optionally, in step S3, the temperature difference Δ T between the temperature T1 of the cooling process and the melting point T2 of the low melting point metal satisfies: Δ T ═ T2-T1, and Δ T was 10 ℃ to 20 ℃.
In addition, in step S3, the low-melting-point metal pattern is cooled to solidify the low-melting-point metal in the low-melting-point metal pattern, and the specific implementation manner of solidifying the low-melting-point metal in the low-melting-point metal pattern can be varied and can be selected by one skilled in the art according to actual needs.
For example, the low melting point metals in the low melting point metal pattern are simultaneously cured. Alternatively, in the embodiment of the present invention, the low melting point metal in the low melting point metal pattern is simultaneously solidified by one or two of the following two ways. Firstly, a base material with a low-melting-point metal pattern is placed on a cooling table, and the low-melting-point metal pattern is cooled; second, the substrate on which the low-melting-point metal pattern is formed is placed on a stage, and a plate-like cooling device is brought into contact with the low-melting-point metal pattern to cool the low-melting-point metal pattern.
Or, along the first direction, the low-melting-point metal pattern comprises N areas which are arranged in sequence, and the 1 st to N areas are sequentially cooled so that the low-melting-point metal in the 1 st to N areas is sequentially solidified. Optionally, in the embodiment of the present invention, the substrate on which the low melting point metal pattern is formed is placed on the operation table, the cooling device in a roll shape or a strip shape is sequentially brought into contact with the 1 st to N th regions, and the cooling process is performed on the 1 st to N th regions, so that the low melting point metals in the 1 st to N th regions are sequentially solidified.
And step S4, covering the packaging film on the surface of the substrate on which the low-melting-point metal pattern is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal.
Optionally, applying pressure to the packaging film and/or the substrate in a rolling manner, a sliding manner or a static pressure manner to complete packaging of the low-melting-point metal pattern, so as to obtain the low-melting-point metal device. The rolling mode is a mode in which a pressure is applied to the packaging film or the base material using a rolling roller after the packaging film and the base material are attached to each other. The sliding mode is a mode in which the pressing member applies pressure to the sealing film and the substrate so as to slide on the surface of the sealing film or the substrate after the sealing film and the substrate are bonded. The static pressure mode means that a pressure applying component applies pressure to the packaging film or the substrate, and the pressure applying component is kept static relative to the packaging film or the substrate.
Optionally, in step S4, the pressure applied on the packaging film and/or the substrate is 1MPa to 30MPa, so that the packaging film can be firmly bonded to the substrate without damaging the low melting point metal pattern.
Since the temperature during the encapsulation process is lower than the melting point of the low-melting-point metal, the step S4 is applied to a cold lamination process (suitable for cold lamination), and the temperature during the encapsulation process can be-30 ℃ to 30 ℃ (for example, -30 ℃, 20 ℃, 10 ℃, 0 ℃, 10 ℃, 20 ℃, 30 ℃), and can be selected reasonably according to the melting points of the encapsulation film and the low-melting-point metal.
In addition, when the substrate on which the low melting point metal pattern is formed is placed on the stage in step S3, the plate-shaped cooling device is brought into contact with the low melting point metal pattern, and the low melting point metal pattern is subjected to a cooling process to simultaneously solidify the low melting point metals in the low melting point metal pattern, alternatively, in step S4, the cooling device applies pressure to the encapsulation film and/or the substrate by means of static pressure, so as to simplify the manufacturing method of the low melting point metal device.
When the substrate on which the low melting point metal pattern is formed is placed on the operation table in step S3, the roll-shaped or strip-shaped cooling device is sequentially brought into contact with the 1 st to N-th regions, and the 1 st to N-th regions are subjected to cooling treatment to sequentially solidify the low melting point metal in the 1 st to N-th regions, optionally, in step S4, pressure is applied to the encapsulation film and/or the substrate by rolling the substrate with the roll-shaped cooling device along the first direction; alternatively, in step S4, pressure is applied to the packaging film and/or the substrate by sliding pressure through a cooling device in the form of a strip along the first direction.
And step S5, heating the low-melting-point metal pattern to room temperature, and melting the low-melting-point metal pattern to obtain the low-melting-point metal device.
The following examples of the present invention illustrate how to select different methods for forming a low melting point metal pattern on a substrate according to the degree of adhesion of the substrate to the low melting point metal.
In one example, the low melting point metal pattern 3 may be formed on the surface of the substrate to which the low melting point metal is attached by one of printing, pad printing, spraying, and printing. Wherein, the printing comprises one of steel screen printing, silk screen printing, ink jet printing, gravure printing, letterpress printing, offset printing and flexographic printing.
In another example, as shown in fig. 2, fig. 2 is a flowchart of forming a low melting point metal pattern on a substrate according to an embodiment of the present invention, where the forming of the low melting point metal pattern on the substrate includes:
and step S21, selecting a substrate capable of adhering and adhering the ink of the low-melting-point metal.
Optionally, in step S21, the ink is one of water-based ink, oil-based self-volatilizing ink, heat-curable ink, ultraviolet-curable ink, electron beam-curable ink, and laser-curable ink.
Similarly, whether the ink adheres to the low melting point metal and whether the ink adheres to the substrate can also be determined in the manner described previously, and will not be described in detail here.
Step S22 is to print an ink pattern on the surface of the substrate with the ink.
The desired mode may be selected, among others, based on the substrate selected, and the ink selected. Alternatively, in step S22, the ink pattern is printed with the ink by one of screen printing, inkjet printing, uv printing, gravure printing, letterpress printing, lithography, thermal transfer printing, and electrostatic printing.
Step S23 is to cure the ink on the surface of the substrate.
Wherein the ink curing mode can be selected according to the selected ink and the selected substrate. Optionally, in step S23, the ink is cured by at least one of room temperature curing, heating curing, ultraviolet light curing, electron beam irradiation curing, and laser curing.
And step S24, printing low-melting-point metal on the surface of the base material, and covering the low-melting-point metal on the ink pattern to obtain the low-melting-point metal pattern.
Alternatively, when the melting point of the low-melting-point metal is equal to or lower than room temperature, the printing of the low-melting-point metal on the surface of the substrate in step S24 includes: printing liquid low-melting-point metal on the surface of a substrate; when the melting point of the low melting point metal is higher than the room temperature, the printing the low melting point metal on the surface of the substrate in step S24 includes: heating the solid low-melting-point metal to completely melt the low-melting-point metal into a liquid state, and printing the liquid low-melting-point metal on the surface of the base material.
In order to prevent the low melting point metal from being solidified too low in temperature or too viscous to be printed during the printing process, the working temperature when the low melting point metal is printed on the surface of the substrate in step S24 may be higher than the melting point of the low melting point metal. Specifically, the temperature of the base material can be suitably selected in combination with the melting point of the low-melting metal.
Specifically, the process of manufacturing the RFID by using the method for manufacturing the low melting point metal device provided by the embodiment of the present invention includes: (1) printing an RFID antenna on a PET film by using a low-melting-point metal with the melting point of 11 ℃ (Ga 67% In20.5% Sn12.5%) by using a flexible plate printing method; (2) the chip of the RFID is fixed on the RFID antenna; (3) reducing the ambient temperature of the RFID antenna to 0 ℃, and pressing the cold-mounted film and the PET film by using a film laminating machine after the RFID antenna is solidified; (4) and (4) restoring the temperature to room temperature, melting the low-melting-point metal forming the RFID antenna into liquid, and packaging the liquid on the PET film by using a cold mount film. The RFID manufactured by the manufacturing method can reach the thickness (about 60 mu m) similar to that of the RFID comprising the aluminum etching antenna at present, and has stronger bending resistance. If the substrate and the packaging film material are replaced by elastic materials, the RFID with certain contractibility can also be manufactured.
The invention provides a manufacturing method of a low-melting-point metal device and a manufacturing method of a solar cell, wherein the manufacturing method of the low-melting-point metal device comprises the following steps: firstly, providing a substrate and a packaging film, then using low-melting-point metal to form a low-melting-point metal pattern on the substrate, wherein the melting point of the low-melting-point metal is lower than room temperature, then cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern, then covering the packaging film on one surface of the substrate on which the low-melting-point metal pattern is formed, applying pressure on the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal, and finally heating the low-melting-point metal pattern to room temperature to melt the low-melting-point metal pattern, thereby obtaining the low-melting-point metal. The temperature in the packaging process is lower than the melting point of the low-melting-point metal, so that the low-melting-point metal is in a solid state and does not have fluidity in the packaging process, and the problem that the low-melting-point metal is deformed or damaged due to overflow of the low-melting-point metal when the packaging film is used for packaging the low-melting-point metal pattern can be solved.
In addition, in the embodiment of the invention, the packaging film is used for packaging, the packaging thickness can be reduced to several microns, the uniform thickness can be ensured, mature film laminating equipment can be used, the film laminating speed is extremely high, the curing time is not needed, and the time is short.
In addition, an embodiment of the present invention further provides a method for manufacturing a solar cell, and specifically, the method for manufacturing a solar cell includes: forming a thin film battery on a substrate; forming a bus line on the substrate on which the thin film battery is formed using a low melting point metal, the melting point of the low melting point metal being lower than room temperature; cooling the bus bar to solidify the low-melting-point metal in the bus bar; covering the packaging film on one surface of the substrate on which the bus bars are formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the bus bars, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal; and heating the bus bar to room temperature, and melting the bus bar to obtain the solar cell.
The specific implementation manner of the bus line can be various:
in an example, as shown in fig. 3, fig. 3 is a schematic structural diagram of a bus bar according to an embodiment of the present invention, where the bus bar 1 includes a low melting point metal line, the low melting point metal line is in an arbitrary shape, and one end of the low melting point metal line extends to the outside of the solar cell. The above arbitrary shape may be a straight line, a broken line, a curved line, or a complex shape formed by combining the above.
In another example, as shown in fig. 4, fig. 4 is a schematic structural diagram of a bus bar according to an embodiment of the present invention, where the bus bar 1 includes a plurality of low-melting-point metal lines, each of the low-melting-point metal lines is in an arbitrary shape, and each of the low-melting-point metal lines is separated from each other, and one end of each of the low-melting-point metal lines extends to the outside of the solar cell. The above arbitrary shape may be a straight line, a broken line, a curved line, or a complex shape formed by combining the above.
In another example, as shown in fig. 5, fig. 5 is a schematic structural diagram of a bus bar according to an embodiment of the present invention, where the bus bar 1 includes a plurality of low-melting-point metal lines, each of the low-melting-point metal lines has an arbitrary shape, at least two of the low-melting-point metal lines are connected to each other through a connection line (in fig. 5, all the low-melting-point metal lines are connected to each other through a connection line, for example), and one end of the connection line extends to the outside of the solar cell. The above arbitrary shape may be a straight line, a broken line, a curved line, or a complex shape formed by combining the above.
The specific details of the manufacturing method of the solar cell described above can be selected with reference to the specific details of the manufacturing method of the low melting point metal device described above, and are not described herein again. Since the thin film battery has good adhesion to the low melting point metal, the bus bar may be formed by one of printing, pad printing, spraying, and printing.
The bus bars of the prior art, which are generally formed by solid metal wire filaments, are located between the thin-film battery and the encapsulation film, and have some disadvantages: the bus bar formed by the solid metal wire is only compounded with the surface of the thin film battery under the wrapping of the packaging film, when the thin film battery is bent and deformed, the contact area between the solid metal wire and the surface of the thin film battery can be changed, and even the solid metal wire is separated from the surface of the thin film battery, so that the contact resistance between the bus bar and the thin film battery is greatly increased, and the battery efficiency is greatly reduced; the bus bar made of the solid metal conducting wire filaments can enable the packaging film to form bulges in the bus bar area and the periphery, and the bulges cannot be tightly compounded with the surface of the thin film battery, so that the light transmittance of the bulge area is reduced, and the photoelectric conversion efficiency of the thin film battery is reduced.
By adopting the technical scheme of the embodiment of the invention, the low-melting-point metal with the melting point lower than the room temperature is selected, the low-melting-point metal is in a liquid state at the normal temperature, the bus bar is manufactured by using the low-melting-point metal, the adhesion of the low-melting-point metal on the surface of the thin-film battery can be kept along with the deformation of the thin-film battery, and the thickness of the low-melting-point metal bus bar packaged by coating can be reduced to 1 mu m at the minimum, so that the complete compounding of the packaging thin film and the surface of the thin-.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for manufacturing a low-melting-point metal device is characterized by comprising the following steps:
step S1, providing a substrate and a packaging film;
step S2 of forming a low melting point metal pattern on the base material using a low melting point metal having a melting point lower than room temperature;
step S3, cooling the low-melting-point metal pattern to solidify the low-melting-point metal in the low-melting-point metal pattern;
step S4, covering the packaging film on the surface of the substrate on which the low-melting-point metal pattern is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the low-melting-point metal pattern, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal;
and step S5, heating the low-melting-point metal pattern to room temperature, and melting the low-melting-point metal pattern to obtain the low-melting-point metal device.
2. The method for manufacturing a low melting point metal device according to claim 1, wherein in step S3, the low melting point metals in the low melting point metal pattern are solidified simultaneously.
3. The method of manufacturing a low melting point metal device according to claim 2, wherein the substrate on which the low melting point metal pattern is formed is placed on a stage, and a plate-like cooling means is brought into contact with the low melting point metal pattern to cool the low melting point metal pattern.
4. The method of manufacturing a low melting point metal device according to claim 3, wherein the cooling device applies pressure to the encapsulation film and/or the substrate by means of static pressure in step S4.
5. The method of manufacturing a low melting point metal device according to claim 1, wherein in step S3, the low melting point metal pattern includes N regions arranged in sequence along the first direction, and the low melting point metal in the 1 st to N regions is solidified in sequence by sequentially performing cooling processing on the 1 st to N regions.
6. The method of manufacturing a low melting point metal device according to claim 5, wherein the base material on which the low melting point metal pattern is formed is placed on a stage, a cooling device in a roll or a bar shape is sequentially brought into contact with the 1 st to N th regions, and the 1 st to N th regions are cooled to sequentially solidify the low melting point metal in the 1 st to N th regions.
7. The method of manufacturing a low melting point metal device according to claim 6, wherein in step S4, a pressure is applied to the encapsulating film and/or the base material by rolling with a roller-shaped cooling device along the first direction; alternatively, in step S4, a strip-shaped cooling device applies pressure to the packaging film and/or the substrate by sliding pressure along the first direction.
8. The method for manufacturing a low melting point metal device according to claim 1, wherein in the step S3, a temperature difference Δ T between a temperature T1 of the cooling treatment and a melting point T2 of the low melting point metal satisfies: and delta T is T2-T1, and delta T is 10-20 ℃.
9. A method for manufacturing a solar cell, comprising:
forming a thin film battery on a substrate;
forming a bus line on the substrate on which the thin film battery is formed, using a low melting point metal having a melting point lower than room temperature;
cooling the bus bar to solidify the low-melting-point metal in the bus bar;
covering a packaging film on one surface of the substrate, on which the bus bar is formed, and applying pressure to the packaging film and/or the substrate to complete packaging of the bus bar, wherein the temperature in the packaging process is lower than the melting point of the low-melting-point metal;
and heating the bus bar to room temperature, and melting the bus bar to obtain the solar cell.
10. The method of claim 9, wherein the bus bar comprises a low melting point metal line, the low melting point metal line is in an arbitrary shape, and one end of the low melting point metal line extends to the outside of the solar cell;
or the bus line comprises a plurality of low-melting-point metal lines, each low-melting-point metal line is in any shape, the low-melting-point metal lines are mutually separated, and one end of each low-melting-point metal line extends to the outside of the solar cell;
or the bus line comprises a plurality of low-melting-point metal lines, each low-melting-point metal line is in any shape, at least two low-melting-point metal lines are connected with each other through a connecting line, and one end of the connecting line extends to the outside of the solar cell.
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| JP2011181467A (en) * | 2010-03-03 | 2011-09-15 | Sumitomo Bakelite Co Ltd | Method for manufacturing conductive connection sheet, connection method between terminals, method for forming connection terminal, semiconductor device, and electronic device |
| CN105033256A (en) * | 2015-08-06 | 2015-11-11 | 中国科学院理化技术研究所 | Low-melting metal freezing printing system and method |
| CN108389916A (en) * | 2018-04-26 | 2018-08-10 | 北京梦之墨科技有限公司 | A kind of bus bar and electrode on solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011181467A (en) * | 2010-03-03 | 2011-09-15 | Sumitomo Bakelite Co Ltd | Method for manufacturing conductive connection sheet, connection method between terminals, method for forming connection terminal, semiconductor device, and electronic device |
| CN105033256A (en) * | 2015-08-06 | 2015-11-11 | 中国科学院理化技术研究所 | Low-melting metal freezing printing system and method |
| CN108389916A (en) * | 2018-04-26 | 2018-08-10 | 北京梦之墨科技有限公司 | A kind of bus bar and electrode on solar cell |
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