CN110970359B - Air bridge with support frame and manufacturing method - Google Patents
Air bridge with support frame and manufacturing method Download PDFInfo
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- CN110970359B CN110970359B CN201911180408.0A CN201911180408A CN110970359B CN 110970359 B CN110970359 B CN 110970359B CN 201911180408 A CN201911180408 A CN 201911180408A CN 110970359 B CN110970359 B CN 110970359B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
Abstract
The invention discloses an air bridge with a support frame and a manufacturing method thereof, wherein the method comprises the following steps: coating a first photoresist on a substrate; patterning the first photoresist; manufacturing a dielectric layer on the first photoresist; covering the second photoresist, developing to remove the second photoresist on the first photoresist, and reserving the second photoresist on the outer side of the first photoresist; manufacturing air bridge metal in an area above the first photoresist; the air bridge metal and the dielectric layer form an air bridge with a support frame; removing the second photoresist and the first photoresist; the invention makes the supporting frame to support the air bridge metal above, so that the air bridge metal does not need to be too thick, and the cost is reduced. The supporting function of the supporting frame also enables the air bridge metal 5 to collapse the bridge for a long distance, and also can collapse the bridge on a substrate with a large height difference, and meanwhile, the supporting frame has good bearing capacity, and prevents the air bridge metal from collapsing due to overweight pressure. The presence of the support frame also isolates the air bridge metal from underlying circuitry beneath the bridge.
Description
Technical Field
The invention relates to the field of manufacturing of air bridges on semiconductor devices, in particular to an air bridge with a support frame and a manufacturing method.
Background
An air bridge (Airbridge) is a three-dimensional structure of MEMS as a concept, two contacts are connected and cross other circuits, the air bridge is equivalent to a flyover, resistance and power consumption increase caused by winding are avoided, the dielectric constant of air is about 1, and a good insulating layer between the upper part of the bridge and the lower part of the bridge is favorably formed. Generally, the air bridge is required to have a thickness greater than 2um based on the structural strength, so as to prevent the bridge from collapsing due to the capillary action in the wet process and increase the stress that the back of the wafer process can bear, thereby increasing the consumption of the metal (usually gold) in the coating. When the difference between the designed two connection points is large, the bridge bottom may contact the substrate or the under-bridge circuit. While longer distances reduce the stress that the air bridge can withstand, it is common to design the air bridge as shorter as possible.
Disclosure of Invention
Therefore, it is necessary to provide an air bridge with a support frame and a manufacturing method thereof, so as to solve the problem that the air bridge is not strong enough and is easy to collapse.
In order to achieve the above object, the inventor provides a method for manufacturing an air bridge with a support frame, comprising the following steps:
coating a first photoresist on a substrate;
patterning the first light resistor, wherein the shape of the support frame is defined by the first light resistor;
manufacturing a dielectric layer on the first photoresist, wherein the dielectric layer covers the first photoresist and the substrate, the dielectric layer is used as a support frame to form a support frame with a triangular section, and the part of the support frame connected with the substrate surface is used as a support part;
covering the second photoresist, developing to remove the second photoresist on the first photoresist, and reserving the second photoresist on the outer side of the first photoresist;
manufacturing air bridge metal on the dielectric layer in the area above the first photoresist, wherein the air bridge metal and the dielectric layer form an air bridge with a support frame;
and removing the second photoresist and the first photoresist.
Furthermore, after the first photoresist is patterned and defines the shape of the supporting frame, the method further comprises the following steps:
the first photoresist is dry etched to form a triangular cross section, with the bottom surface of the first photoresist on the surface of the substrate.
Further, an angle between the side wall and the bottom surface of the first photoresist is 40 degrees or more.
Further, when patterning the first photoresist, the method further includes:
controlling the exposure focal length to be 0-2 microns, so that the thickness of the exposed first photoresist is 0-2 microns.
Further, before covering the first photoresist on the substrate, the method further comprises the following steps:
the substrate is covered with hexamethyldisilazane.
Further, the method also comprises the following steps:
coating photoresist, developing the photoresist, retaining the photoresist on the support frame, and etching the dielectric layer outside the support frame by using the photoresist as a mask.
The invention provides an air bridge with a support frame, which is manufactured by the manufacturing method of the air bridge with the support frame.
The invention provides an air bridge with a support frame, which consists of the support frame and air bridge metal, wherein the support frame is provided with a supporting part connected with a substrate, the air bridge metal is arranged on the support frame, and the section of the support frame is triangular.
Different from the prior art, the supporting frame is manufactured to support the air bridge metal above the supporting frame in the technical scheme, so that the air bridge metal does not need to be too thick, and the cost is reduced. The supporting function of the supporting frame also enables the air bridge metal 5 to collapse for a long distance, and the bridge can be collapsed on a substrate with a large height difference, and meanwhile, the supporting frame has good bearing capacity, and the air bridge metal is prevented from collapsing due to the fact that the air bridge metal is stressed too heavily. The existence of support frame can also keep apart air bridge metal and the bottom circuit under the bridge, prevents that air bridge metal from taking place the short circuit.
Drawings
FIG. 1 is a manufacturing process flow of the present invention;
FIG. 2 is a cross-sectional view of a first photoresist formed on a substrate according to the present invention;
FIG. 3 is a schematic cross-sectional view of a patterned first photoresist according to the present invention;
FIG. 4 is a schematic cross-sectional view illustrating trimming of a first photoresist according to the present invention;
FIG. 5 is a schematic cross-sectional view of the support frame of the present invention;
FIG. 5a is a schematic view of a partial stress of the support frame according to the present invention;
FIG. 6 is a cross-sectional view of a dielectric layer formed on a substrate according to the present invention;
FIG. 7 is a cross-sectional view of a second photoresist formed on a substrate according to the present invention;
FIG. 8 is a cross-sectional view of an air bridge metal formed on a substrate according to the present invention;
FIG. 9 is a schematic cross-sectional view of a first photoresist according to the present invention;
FIG. 10 is a cross-sectional view of the present invention for etching a dielectric layer on a substrate;
FIG. 11 is a cross-sectional view of a dielectric layer according to the present invention;
FIG. 12 is a schematic cross-sectional view of an air bridge with a support bracket according to the present invention;
FIG. 13 is a schematic cross-sectional view of a conventional air bridge according to the present invention;
FIG. 14 is a schematic cross-sectional view of an air bridge with a support bracket according to the present invention;
FIG. 15 is a schematic cross-sectional view of an air bridge with a support frame for bridging over a substrate with large step height according to the present invention;
FIG. 16 is a schematic perspective view of an air bridge with a support frame for bridging over a substrate with large height difference according to the present invention;
fig. 17 is a schematic perspective view of an air bridge with a support frame for long-distance bridge collapse according to the present invention.
Description of the reference numerals:
1. a substrate;
2. a first photoresist;
3. a dielectric layer;
31. supporting part
4. A second photoresist;
5. an air bridge metal;
6. a light resistance;
7. and a bottom layer circuit.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1 to 17, the present embodiment provides a method for fabricating an air bridge with a supporting frame, which can be performed on a substrate 1, such as a silicon carbide substrate, a sapphire substrate, a gallium nitride substrate, etc. The manufacturing method comprises the following steps: an adhesion promoter, which may be Hexamethyldisilazane (HMDS) and dimethyldichlorosilane, and a first photoresist 2 are coated on the substrate 1. If the adhesion promoter is hexamethyldisilazane, the substrate 1 is placed in an oven with hexamethyldisilazane vapor, and the hexamethyldisilazane is vapor-coated on the surface of the substrate 1 since it is a volatile liquid. After the adhesion promoter is covered on the substrate 1, the substrate 1 with the adhesion promoter is covered with the first photoresist 2, and this step corresponds to the process step S101 of the embodiment of fig. 1. The adhesion promoter serves to increase the adhesion between the photoresist and the substrate 1, so the adhesion promoter may not need to be fabricated in some cases, and the first photoresist 2 may be directly covered on the substrate 1.
After covering the first photoresist 2, the first photoresist 2 is patterned. Referring to fig. 3, this step corresponds to step S102 of the embodiment in fig. 1. The specific process is that firstly, a stepping photoetching machine is used for exposing the area of the first photoresistor 2 to be reserved subsequently, the exposure focal length is controlled to be 0-2 micrometers (um), namely, the thickness of the first photoresistor 2 after exposure is 0-2 micrometers. Then, the first photoresist 2 is developed, and an angle between the bottom surface and the sidewall of the first photoresist 2 is about 80 degrees in the developing process. The cross section of the exposed and developed first photoresist 2 is trapezoidal in shape.
The first photoresist 2 defines the shape of the support in the air bridge with the support, so that after the first photoresist is patterned, the first photoresist needs to be further trimmed. Referring to fig. 4, this step corresponds to step S103 of the embodiment in fig. 1. The specific process is to etch the first photoresist 2 by dry etching, wherein the dry etching may be inductively coupled plasma etching (ICP) or Reactive Ion Etching (RIE), and the etching gas may be oxygen mixed with argon or oxygen, argon mixed with fluorocarbon gas. Dry etching both sides and the top of the first photoresist 2 to make the cross section of the first photoresist 2 form a triangle. A straight or curved triangular prism shape is formed, and the bottom surface of the first photoresist 2 is on the surface of the substrate 1.
During trimming, the side of the first photoresist 2 needs to be avoidedWhen the angle between the wall and the bottom is too small, the angle between the sidewall and the bottom on both sides of the first photoresist 2 is over 40 degrees because the angle between the sidewall and the bottom is too small to cause the insufficient vertical bearing force. Referring to FIGS. 5 and 5a, A is the cross-sectional area of the support (i.e., dielectric layer 3); f: pressure generated by the back-of-wafer process; fAThe reaction force of the point A; [ sigma ]]Allowable stress and maximum limit of component working stress; sigmabUltimate stress, the maximum stress that the material can bear; n isbThe safety coefficient of the brittle material is generally 2 to 3.5. Because of the different parameters, the resulting material composition and density are different, and therefore the relationship between stress, angle and pressure, i.e., [ sigma ] is only formulated]＝σb/nb(ii) a . The membrane can withstand the maximum pressure F as long as the allowable stress [ sigma ] of the membrane is not exceeded]. From the force balance, it can be known that: fA＝F/2sinθ，FAx＝FAcosθ，FAxIs FAComponent force in the x-axis direction. Namely: fA≤[σ]A, obtaining: f is less than or equal to 2sin theta [ sigma ]]A, the stress requirement of the dielectric layer 3 can be calculated according to the pressure of the wafer back process, and the angle theta between the side wall and the bottom surface of the first photoresist 2 is recommended to be more than or equal to 40 degrees.
A dielectric layer 3 is then fabricated on the substrate 1. Referring to fig. 6, this step corresponds to the process step S104 of the embodiment in fig. 1. The specific steps are, a chemical vapor deposition method may be adopted to plate a dielectric layer material, the dielectric layer material may be an insulating material, such as nitride (silicon nitride, etc.) or other dielectric layer materials, the dielectric layer 3 covers the first photoresist 2 and the substrate 1, the dielectric layer 3 serves as a support in an air bridge with a support, and a portion of the support connected to the substrate surface serves as the support 31.
The supporting frame has two supporting parts 31, and the top end of the supporting frame and the supporting part 31 of the supporting frame form a triangular structure. A triangle is characterized by a constant angle if the side length is fixed. And the triangle is used for bridges, buildings and the like, and is a structure with the advantages of material saving and good bearing capacity. When the linear dimension of the object is reduced by x times in all directions, the mechanical strength is reduced by x times, which is much less than the reduction of the mass, so that the micromechanical structure can withstand considerable acceleration without being damaged.
After the dielectric layer 3 is formed, the second photoresist 4 is coated and the pattern is defined. Referring to fig. 7, this step corresponds to step S105 of the embodiment in fig. 1. The specific process is to coat the second photoresist 4 on the dielectric layer 3, and to pattern the second photoresist 4, i.e. to expose and develop the region above the first photoresist 2, remove the second photoresist 4 on the region above the first photoresist 2, and retain the second photoresist 4 outside the first photoresist 2. After the second photoresist 4 on the upper region of the first photoresist 2 is developed and removed, the region can be used as a formation region of the subsequent air bridge metal 5.
After the second photoresist 4 is manufactured, the air bridge metal 5 is manufactured. Referring to fig. 8 and 9, this step corresponds to step S106 of the embodiment of fig. 1. The specific process comprises the steps of firstly carrying out metal coating by using a metal coating machine, coating metal on the dielectric layer 3 in a sputtering, evaporation or electroplating mode, forming air bridge metal 5 on the dielectric layer 3 in the area above the first photoresist 2, and forming an air bridge with a support frame by the air bridge metal 5 and the dielectric layer 3. The air bridge metal 5 extends from the corner of the first photoresist 2 to two edges, and the air bridge metal 5 can cross to a via or other contact along the upper edge of the support. After the air bridge metal 5 is manufactured, the metal is lifted off and the photoresist is removed for cleaning, and a metal stripping machine can be adopted to strip the redundant metal on the second photoresist 4 and simultaneously remove the second photoresist 4.
In order to avoid the connection between the support frame and the underlying line 7, it is necessary to etch part of the dielectric layer 3. Referring to fig. 10 and 11, this step corresponds to the processing step S107 of the embodiment of fig. 1. The specific process is to coat a tackifier and a photoresist on the dielectric layer 3, wherein the tackifier can be Hexamethyldisilazane (HMDS) and dimethyldichlorosilane. The photoresist is then patterned, i.e., exposed and developed to open the areas outside the supports, and portions of the dielectric layer 3 (i.e., the dielectric layer not desired on the substrate) are etched using the photoresist as a mask. Of course, the photoresist on the air bridge metal 5, the supporting portion 31 and the supporting frame are not removed by development, and the remaining photoresist protects the air bridge metal 5 and the supporting frame during etching. The bottom layer circuit 7 is not connected with the support frame in the etching process. Of course, the step of performing the photolithography patterning on the dielectric layer 3 may also be performed immediately after the dielectric layer 3 is manufactured, and in the same way, the support frame is not connected to the bottom layer circuit 7.
After the dielectric layer 3 is etched, the photoresist is removed, and the first photoresist 2 covered by the dielectric layer 3 is also removed. Referring to fig. 12, this step corresponds to step S108 of the embodiment in fig. 1. The photoresist 6 is exposed on the surface of the substrate 1 and is therefore relatively easy to remove. The first photoresist 2 is covered by the support frame, the first photoresist 2 can be removed by dry etching or wet etching from the side surface, a hole can be formed in the support frame at the outer side of the air bridge metal 5, and then the first photoresist 2 is removed by dry etching or wet etching through the hole.
Referring to fig. 13 and 14, under the same length of the air bridge metal and the same metal plating time, the cross-sectional area of the air bridge metal with the support frame is larger according to the formula of the resistance: where ρ is the resistivity, L is the length of the metal, S is the sectional area of the metal, and d is the metal width in fig. 13 and 14, i.e., the resistance of the air bridge metal 5 of a larger sectional area is smaller than that of the conventional air bridge metal.
Referring to fig. 15, 16 and 17, the supporting frame of the present invention supports the air bridge metal 5 above the supporting frame, so that the air bridge metal 5 does not need to be too thick, thereby reducing the cost. The supporting function of the supporting frame also enables the air bridge metal 5 to collapse the bridge for a long distance, and the bridge can be collapsed on the substrate 1 with a large height difference, and meanwhile, the supporting frame has good bearing capacity, and the air bridge metal 5 is prevented from collapsing due to the fact that the air bridge metal is stressed too heavily. The existence of the support frame can also isolate the air bridge metal 5 from the bottom layer circuit 7 or the substrate 1 under the bridge, so that the air bridge metal 5 is prevented from mistakenly touching the bottom layer circuit 7 to cause short circuit. In the substrate structure with large height difference, the support frame can be formed as long as the first photoresist 2 can be formed.
The invention provides an air bridge with a support frame, which is manufactured by the manufacturing method of the air bridge with the support frame.
The invention provides an air bridge with a support frame, please refer to fig. 12, fig. 15, fig. 16 and fig. 17, the air bridge with the support frame is composed of the support frame and an air bridge metal 5, the support frame is provided with a support part 31 connected with a substrate 1, the number of the support parts 31 is two, the convex part of the support frame and the bottom surface of the substrate 1 form a triangle, and the convex part of the support frame and the bottom surface of the substrate 1 can also form a rectangle, an arc and the like. The air bridge metal 5 is arranged on the convex part of the support frame, and the air bridge metal 5 is connected.
The air bridge metal 5 and the support frame form an air bridge with a support frame. The supporting frame can support the air bridge metal 5 above, so that the air bridge metal 5 does not need to be too thick, and the cost is reduced. The supporting function of the supporting frame also enables the air bridge metal 5 to collapse for a long distance, and the bridge can be collapsed on the substrate 1 with a large height difference, and meanwhile, the supporting frame has good bearing capacity, and the air bridge metal 5 is prevented from collapsing due to the fact that the air bridge metal is stressed too heavily. The existence of the support frame can also isolate the air bridge metal 5 from the bottom layer circuit 7 or the substrate 1 under the bridge, so that the air bridge metal 5 is prevented from mistakenly touching the bottom layer circuit 7 to cause short circuit.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present invention.
Claims (8)
1. A manufacturing method of an air bridge with a support frame is characterized by comprising the following steps:
coating a first photoresist on a substrate;
patterning a first light resistor, wherein the shape of the support frame is defined by the first light resistor, the section of the first light resistor is triangular, and a straight or curved triangular prism shape is formed;
manufacturing a dielectric layer on the first photoresist, wherein the dielectric layer covers the first photoresist and the substrate, the dielectric layer is used as a support frame to form a support frame with a triangular section, and the part of the support frame connected with the substrate surface is used as a support part;
covering the second photoresist, developing to remove the second photoresist on the first photoresist, and reserving the second photoresist on the outer side of the first photoresist;
manufacturing air bridge metal in an area above the first photoresist, wherein the air bridge metal is on the dielectric layer, the air bridge metal and the dielectric layer form an air bridge with a support frame, the air bridge metal spans to the through hole or other joints along the upper edge of the support frame, the air bridge metal is in a transverse direction, and the triangular section of the support frame is in a longitudinal direction; the number of the supporting frames is multiple, the bottom layer circuit is arranged between the two supporting frames, and the air bridge metal crosses the bottom layer circuit along the upper edge of the supporting frame;
and removing the second photoresist and the first photoresist.
2. The method as claimed in claim 1, further comprising the steps of patterning a first photoresist defining the shape of the supporting frame, wherein the patterning step further comprises:
the first photoresist is dry etched to form a triangular cross section, with the bottom surface of the first photoresist on the surface of the substrate.
3. The method as claimed in claim 2, wherein an angle between the sidewall and the bottom of the first photoresist is greater than or equal to 40 °.
4. The method as claimed in claim 1, further comprising the steps of:
controlling the exposure focal length to be 0-2 microns, so that the thickness of the exposed first photoresist is 0-2 microns.
5. The method as claimed in claim 1, further comprising the steps of, before covering the first photoresist on the substrate:
the substrate is covered with hexamethyldisilazane.
6. The method for manufacturing an air bridge with a supporting frame according to claim 1, further comprising the steps of:
coating photoresist, developing the photoresist, retaining the photoresist on the support frame, and etching the dielectric layer outside the support frame by using the photoresist as a mask.
7. An air bridge with a support, characterized in that, the air bridge with a support is made by the method for making an air bridge with a support according to any one of claims 1 to 6.
8. An air bridge with a support frame is characterized in that the air bridge with the support frame consists of the support frame and air bridge metal, the support frame is provided with a supporting part connected with a substrate, the air bridge metal is arranged on the support frame, the section of the support frame is triangular, the air bridge metal stretches across to a through hole or other joints along the upper edge of the support frame, the air bridge metal is in a transverse direction, and the triangular section of the support frame is in a longitudinal direction; the quantity of support frame is a plurality of, and the bottom circuit is arranged in between two support frames, and the air bridge metal crosses the bottom circuit along support frame upper edge.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232445A (en) * | 1983-06-15 | 1984-12-27 | Sumitomo Electric Ind Ltd | Multilayer interconnection method |
| CN107005204A (en) * | 2014-10-31 | 2017-08-01 | 雷声公司 | The output matching network of capacitor in series and parallel component with single combination |
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| US7335965B2 (en) * | 1999-08-25 | 2008-02-26 | Micron Technology, Inc. | Packaging of electronic chips with air-bridge structures |
| US9219024B2 (en) * | 2013-11-21 | 2015-12-22 | Raytheon Company | Air bridge structure having dielectric coating |
| CN110491830B (en) * | 2019-07-18 | 2022-08-19 | 福建省福联集成电路有限公司 | Air bridge manufacturing method and device with air bridge |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232445A (en) * | 1983-06-15 | 1984-12-27 | Sumitomo Electric Ind Ltd | Multilayer interconnection method |
| CN107005204A (en) * | 2014-10-31 | 2017-08-01 | 雷声公司 | The output matching network of capacitor in series and parallel component with single combination |
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