CN110967050A - High-frequency sensor suitable for short-range detection - Google Patents

High-frequency sensor suitable for short-range detection Download PDF

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Publication number
CN110967050A
CN110967050A CN201911424031.9A CN201911424031A CN110967050A CN 110967050 A CN110967050 A CN 110967050A CN 201911424031 A CN201911424031 A CN 201911424031A CN 110967050 A CN110967050 A CN 110967050A
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China
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shell
matching layer
frequency sensor
sensor suitable
short
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CN201911424031.9A
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Chinese (zh)
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叶勇勇
朱兆焱
吴章裕
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Audiowell Electronics Guangdong Co ltd
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Audiowell Electronics Guangdong Co ltd
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Priority to CN201911424031.9A priority Critical patent/CN110967050A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/48—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using wave or particle radiation means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

The invention relates to a high-frequency sensor suitable for close-range detection, which comprises a first shell, a piezoelectric ceramic piece and a first matching layer. The piezoelectric ceramic piece is arranged in the first shell, and the piezoelectric ceramic piece is connected with one end face of the first matching layer. The first matching layer is embedded in the first shell, and the other end of the first matching layer protrudes out of the first end of the first shell. According to the high-frequency sensor suitable for short-distance detection, after the first matching layer is embedded in the first shell, on one hand, the first matching layer is embedded and fixed in the first shell, and the whole high-frequency sensor suitable for short-distance detection is relatively stable in structure; on the other hand, because the tip with first matching layer is protruding outside the first end of first shell, can reduce the first shell to the binding power all around of first matching layer, can greatly reduced echo signal not enough phenomenon like this. That is, it can be applied to short-range detection while having a good echo signal.

Description

High-frequency sensor suitable for short-range detection
Technical Field
The invention relates to a sensor, in particular to a high-frequency sensor suitable for short-distance detection.
Background
With the rise of smart homes, more and more high-frequency sensors of different types are applied to short-distance (2 cm-5 cm) detection of smart furniture products. However, the conventional high-frequency sensor generally has the following problems: the residual vibration of the high-frequency sensor is large, no effective inhibiting means is provided, so that the blind area of the high-frequency sensor is too large, and the short-distance detection requirement on the market cannot be met; alternatively, the aftervibration of the high frequency sensor is small, but the echo signal is too weak to be recognized.
Disclosure of Invention
In view of the above, there is a need to overcome the defects in the prior art and to provide a high frequency sensor suitable for short-range detection, which can be suitable for short-range detection and has better echo signal.
The technical scheme is as follows: a high frequency sensor suitable for use in proximity detection, comprising: the piezoelectric ceramic piece is arranged in the first shell, the piezoelectric ceramic piece is connected with one end face of the first matching layer, the first matching layer is embedded in the first shell, and the other end of the first matching layer protrudes out of the first end of the first shell.
According to the high-frequency sensor suitable for short-distance detection, after the first matching layer is embedded in the first shell, on one hand, the first matching layer is embedded and fixed in the first shell, and the whole high-frequency sensor suitable for short-distance detection is relatively stable in structure; on the other hand, because the tip with first matching layer is protruding outside the first end of first shell, can reduce the first shell to the binding power all around of first matching layer, can greatly reduced echo signal not enough phenomenon like this. That is, it can be applied to short-range detection while having a good echo signal.
In one embodiment, the thickness of the part of the first matching layer protruding out of the first shell is T1, and is lambda/8-T1-lambda/4, wherein lambda is the wavelength of ultrasonic waves; the density of the first matching layer is P1, 0.5g/cm3≤P1≤0.7g/cm3。
In one embodiment, the high-frequency sensor suitable for short-range detection further comprises a second matching layer coated on the first matching layer.
In one embodiment, the second matching layer has a thickness of T2, T1/4 ≦ T2 ≦ T1; the density of the second matching layer is P2, 0.7g/cm3≤P2≤1.1g/cm3。
In one embodiment, the high-frequency sensor suitable for short-distance detection further comprises a damping layer, a switching PCB, first potting adhesive, an outer lead and two inner leads; the damping layer is arranged between the switching PCB and the piezoelectric ceramic piece, the switching PCB is respectively connected with the anode and the cathode of the piezoelectric ceramic piece through two internal connecting wires, and the switching PCB is electrically connected with external equipment through an external wire; the first pouring sealant is injected into the first shell through the second end of the first shell, and the first pouring sealant is connected with the switching PCB.
In one embodiment, the inner wall of the first shell is provided with a first step surface, and one end of the first matching layer is abutted against the first step surface.
In one embodiment, the high-frequency sensor suitable for short-distance detection further comprises a second shell and an elastic sleeve; the second shell sleeve is sleeved outside the first shell sleeve, and the elastic sleeve is arranged between the first shell sleeve and the second shell sleeve; the end face of the first end of the first shell, the end face of the first end of the second shell and the end face of the first end of the elastic sleeve are located on the same plane, and the end portion of the first matching layer protrudes out of the plane.
In one embodiment, the elastic sleeve is a rubber sleeve or a silica gel sleeve; the hardness of the elastic sleeve is 25-50 shore A.
In one embodiment, a second step surface and a third step surface are arranged on the inner wall of the second shell, the end surface of the second end of the elastic sleeve is in interference fit with the second step surface, and the end surface of the second end of the first shell is in interference fit with the third step surface.
In one embodiment, the high-frequency sensor suitable for short-range detection further includes a second potting adhesive, the second potting adhesive is injected into the second casing through the second end of the second casing, and the second potting adhesive is connected to the second end of the first casing.
Drawings
Fig. 1 is a schematic structural diagram of a high-frequency sensor suitable for proximity detection according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a high-frequency sensor suitable for short-distance detection according to an embodiment of the present invention;
FIG. 3 is an enlarged schematic view of FIG. 2 at A;
FIG. 4 is a schematic structural diagram of a high-frequency sensor suitable for proximity detection according to another embodiment of the present invention;
fig. 5 is a schematic structural diagram of a high-frequency sensor suitable for proximity detection according to another embodiment of the present invention.
Reference numerals:
10. a first shell; 11. a first step surface; 20. piezoelectric ceramic plates; 30. a first matching layer; 40. a second matching layer; 50. a damping layer; 60. switching the PCB; 70. a first pouring sealant; 81. an outer lead; 82. an internal connection lead; 90. a second shell; 91. an elastic sleeve; 92. a second step surface; 93. a third step surface; 94. and a second potting adhesive.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description of the present invention, it should be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.
In order to be suitable for short-distance detection, a common high-frequency sensor comprises a rubber shell, a piezoelectric ceramic piece arranged in the rubber shell and a first matching layer. Firstly, the piezoelectric ceramic piece is bonded with one surface of the first matching layer, then the first matching layer is embedded in the rubber shell, and the other surface of the first matching layer is assembled with the rubber shell in a flush manner. However, the high frequency sensor assembled by the end surface of the first matching layer and the glue shell in a flush manner can cause the glue shell to generate a binding force on the periphery of the first matching layer, so that partial echo signals are not enough after the high frequency sensor is assembled.
In one embodiment, referring to fig. 1 to 3, a high frequency sensor suitable for proximity detection includes a first housing 10, a piezoceramic sheet 20, and a first matching layer 30. The piezoelectric ceramic piece 20 is disposed in the first casing 10, and the piezoelectric ceramic piece 20 is connected to one end surface of the first matching layer 30. The first matching layer 30 is embedded in the first shell 10, and the other end of the first matching layer 30 protrudes out of the first end of the first shell 10.
In the high-frequency sensor suitable for short-distance detection, after the first matching layer 30 is embedded in the first shell 10, on one hand, the first matching layer 30 is embedded and fixed in the first shell 10, and the whole high-frequency sensor suitable for short-distance detection has a stable structure; on the other hand, since the end of the first matching layer 30 protrudes out of the first end of the first shell 10, the binding force of the first shell 10 to the periphery of the first matching layer 30 can be reduced, so that the phenomenon of insufficient echo signals can be greatly reduced. That is, it can be applied to short-range detection while having a good echo signal.
Further, referring to fig. 1 to 3, the thickness of the portion of the first matching layer 30 protruding out of the first shell 10 is T1, λ/8 ≦ T1 ≦ λ/4, where λ is the wavelength of the ultrasonic wave. Thus, the binding force of the first shell 10 to the periphery of the first matching layer 30 can be reduced, which can greatly reduce the phenomenon of insufficient echo signals. That is, it can be applied to short-range detection while having a good echo signal. In addition, material of the first matching layer 30 can be saved without increasing the thickness of the first matching layer 30.
Further, specifically, the density of the first matching layer 30 is P1, 0.5g/cm3≤P1≤0.7g/cm3. At this density, the first matching layer 30 has good elasticity, can realize a good echo signal, and has high sensitivity.
In one embodiment, referring to fig. 1 to 3, the high frequency sensor for short-range detection further includes a second matching layer 40. The second matching layer 40 is coated on the first matching layer 30. In this way, the residual vibration of the product can be adjusted by controlling the thickness of the second matching layer 40, and the residual vibration of the high-frequency sensor suitable for close-range detection can be small.
Further, referring to FIGS. 1 to 3, the thickness of the second matching layer 40 is T2, T1/4 ≦ T2 ≦ T1. Further, the density of the second matching layer 40 was P2, 0.7g/cm3≤P2≤1.1g/cm3. Thus, the high-frequency sensor suitable for short-distance detection has low aftervibration and high performance.
In one embodiment, referring to fig. 2 and fig. 3, the high frequency sensor for short-range detection further includes a damping layer 50, an adapting PCB 60, a first potting compound 70, an outer lead 81 and two inner leads 82. The damping layer 50 is disposed between the adapting PCB board 60 and the piezoelectric ceramic piece 20, the adapting PCB board 60 is connected to the positive electrode and the negative electrode of the piezoelectric ceramic piece 20 through two internal connection wires 82, and the adapting PCB board 60 is electrically connected to an external device through an external wire 81. Thus, the adapting PCB 60 realizes the electrical connection between the external device and the piezoelectric ceramic plate 20.
In addition, referring to fig. 2 and fig. 3, the first potting adhesive 70 is injected into the first casing 10 through the second end of the first casing 10, and the first potting adhesive 70 is connected to the adapting PCB 60. Thus, the adapting PCB 60, the damping layer 50, the piezoelectric ceramic plate 20 and the first matching layer 30 can be stably mounted in the first housing 10. In addition, the damping layer 50 can reduce the vibration quantity transferred to the adapting PCB 60 by the piezoelectric ceramic plate 20 as much as possible, thereby improving the detection sensitivity of the echo signal and the performance of the product.
Specifically, referring to fig. 2 and 3, one end surface of the damping layer 50 is tightly attached to the adapting PCB 60, the outer side wall of the damping layer 50 is tightly attached to the inner side wall of the first housing 10, the other end surface of the damping layer 50 is tightly attached to the first matching layer 30, and the piezoelectric ceramic plate 20 is embedded in the damping layer 50. Therefore, the damping layer 50 can play a role in reducing the residual vibration of the product on one hand, and can reduce the vibration quantity transmitted to the adapter PCB 60 by the piezoelectric ceramic piece 20 as much as possible on the other hand, and the high-frequency sensor suitable for short-distance detection has high performance.
In one embodiment, referring to fig. 2 and 3, the inner wall of the first shell 10 is provided with a first step surface 11, and one end of the first matching layer 30 abuts against the first step surface 11. Thus, the first matching layer 30 can be stably positioned and installed in the first housing 10. Specifically, the outer diameter of the first matching layer 30 is slightly larger than the inner diameter of the first shell 10, so that the outer sidewall of the first matching layer 30 is tightly fitted with the inner sidewall of the first shell 10, thereby achieving a stable arrangement in the first shell 10.
In one embodiment, referring to fig. 4 and 5, the high frequency sensor for short-distance detection further includes a second housing 90 and an elastic sleeve 91. The second shell 90 is sleeved outside the first shell 10, and the elastic sleeve 91 is disposed between the first shell 10 and the second shell 90. The end face of the first end of the first shell 10, the end face of the first end of the second shell 90 and the end face of the first end of the elastic sleeve 91 are located on the same plane, and the end portion of the first matching layer 30 protrudes out of the plane. The elastic sleeve 91 is specifically, for example, a rubber sleeve or a silicone sleeve, and is not limited herein. Therefore, the first shell 10 is bound in the shell wall of the second shell 90 through the elastic sleeve 91, the elastic sleeve 91 and the first shell 10 are stably fixed through the second shell 90, the residual vibration of the first shell 10 can be reduced, and the performance of the product is high. In addition, second shell 90 presses elastic sleeve 91, so that elastic sleeve 91 forms a circumferential and centripetal binding force on first shell 10. In addition, a certain volume gap is left between the outer wall of the elastic sleeve 91 and the inner wall of the second shell 90 to allow the compression deformation of the elastic sleeve 91, and the deformation amount of the elastic sleeve 91 is between 1% and 5%.
In one specific embodiment, referring to fig. 4 and 5, the elastic sleeve 91 is a rubber sleeve; the elastomeric sheath 91 has a hardness of 25shore a to 50shore a. Thus, the elastic sleeve 91 has moderate hardness, can exert the effect of reducing aftervibration of the high-frequency sensor suitable for close-range detection, and has good effect. When the hardness of the elastic sheath 91 is low or high, although it can also reduce the aftervibration of the high-frequency sensor for short-range detection, the effect of reducing the aftervibration of the high-frequency sensor for short-range detection is slightly lower than the vibration damping effect of the elastic sheath 91 with a hardness of 25shore a to 50shore a.
In one embodiment, referring to fig. 4 and 5, the first casing 10 and the second casing 90 are both rubber casings, and may also be metal casings or plastic casings, which are not limited herein.
Further, referring to fig. 4 and 5, a second step 92 and a third step 93 are disposed on an inner wall of the second casing 90. The end face of the second end of the elastic sleeve 91 is in interference fit with the second step face 92, and the end face of the second end of the first shell 10 is in interference fit with the third step face 93. So, first shell 10 is packed into in the second shell 90 back, the terminal surface and the third step face 93 of the second end of first shell 10 are contradicted to cooperate, elastic sleeve 91 is packed into in the second shell 90 back, elastic sleeve 91 is more than the cover and is located outside first shell 10, and the cover is located in second shell 90, the terminal surface of the second end of elastic sleeve 91 still with the inconsistent cooperation of second step face 92, can realize second shell 90 like this, first shell 10 and elastic sleeve 91 three fast assembly, and the steadiness after the equipment is better.
In one embodiment, referring to fig. 4 and 5, the high frequency sensor for proximity detection further includes a second potting compound 94. The second potting adhesive 94 is injected into the second shell 90 through the second end of the second shell 90, and the second potting adhesive 94 is connected to the second end of the first shell 10. Thus, the second potting adhesive 94 can firmly combine the first shell 10, the second shell 90 and the elastic sleeve 91 together, and the stability is good.
As an alternative, in order to achieve the stable combination between the first shell 10 and the second shell 90, an inner wall of the second shell 90 between the second step surface 92 and the third step surface 93 is provided with an adhesive, the second end of the first shell 10 is fixed to the second shell 90 by the adhesive, and in addition, the end surface of the second end of the first shell 10 is against the third step surface 93. This achieves that the second end of first shell 10 is securely disposed in second shell 90.
Further, referring to fig. 4 and 5, an inner wall portion between the second step 92 and the third step 93 of the second housing 90 corresponds to a position of the adapting PCB 60 in the first housing 10, that is, the adapting PCB 60 is correspondingly disposed at the second end of the first housing 10, so as to be stably mounted in the first housing 10.
Further, referring to fig. 4 and 5, the inner wall portion between the second step surface 92 and the first end surface of the second casing 90 is correspondingly sleeved outside the elastic sleeve 91 and is disposed corresponding to the damping layer 50, the piezoelectric ceramic plate 20 and the first matching layer 30 in the first casing 10. Therefore, in the vibration process of the piezoelectric ceramic piece 20, the elastic sleeve 91 is sleeved outside the first shell 10, namely outside the damping layer 50, the piezoelectric ceramic piece 20 and the first matching layer 30, so that a good vibration damping effect can be exerted, the residual vibration of the high-frequency sensor suitable for close-range detection is small, and the performance of the product is high.
As an optional scheme, in order to realize that the elastic sleeve 91 is stably sleeved outside the outer wall of the first shell 10, an adhesive is provided on the outer wall of the first shell 10, and the elastic sleeve 91 is fixed to the outer wall of the first shell 10 by the adhesive.
As an alternative, the outer wall of the elastic sleeve 91 may be fixed to the inner wall of the second casing 90 by gluing. Alternatively, the outer diameter of the outer wall of the elastic sleeve 91 is larger than the inner diameter of the second housing 90, so that the elastic sleeve 91 can be stably disposed in the second housing 90.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A high frequency sensor suitable for use in proximity detection, comprising:
the piezoelectric ceramic piece is arranged in the first shell, the piezoelectric ceramic piece is connected with one end face of the first matching layer, the first matching layer is embedded in the first shell, and the other end of the first matching layer protrudes out of the first end of the first shell.
2. The high-frequency sensor suitable for short-range detection according to claim 1, wherein the thickness of the portion of the first matching layer protruding outside the first shell is T1, λ/8 ≦ T1 ≦ λ/4, where λ is the wavelength of ultrasonic waves(ii) a The density of the first matching layer is P1, 0.5g/cm3≤P1≤0.7g/cm3。
3. The high frequency sensor suitable for close proximity detection according to claim 1, further comprising a second matching layer coated on the first matching layer.
4. The high-frequency sensor suitable for close proximity detection according to claim 3, wherein the second matching layer has a thickness of T2, T1/4 ≦ T2 ≦ T1; the density of the second matching layer is P2, 0.7g/cm3≤P2≤1.1g/cm3。
5. The high-frequency sensor suitable for short-distance detection according to any one of claims 1 to 4, further comprising a damping layer, an adapting PCB, a first potting adhesive, an outer lead and two inner leads; the damping layer is arranged between the switching PCB and the piezoelectric ceramic piece, the switching PCB is respectively connected with the anode and the cathode of the piezoelectric ceramic piece through two internal connecting wires, and the switching PCB is electrically connected with external equipment through an external wire; the first pouring sealant is injected into the first shell through the second end of the first shell, and the first pouring sealant is connected with the switching PCB.
6. The high-frequency sensor suitable for short-range detection according to claim 5, wherein the inner wall of the first shell is provided with a first step surface, and one end of the first matching layer is in contact with the first step surface.
7. The high-frequency sensor suitable for close range detection according to claim 5, further comprising a second housing and an elastic sleeve; the second shell sleeve is sleeved outside the first shell sleeve, and the elastic sleeve is arranged between the first shell sleeve and the second shell sleeve; the end face of the first end of the first shell, the end face of the first end of the second shell and the end face of the first end of the elastic sleeve are located on the same plane, and the end portion of the first matching layer protrudes out of the plane.
8. The high-frequency sensor suitable for close range detection according to claim 7, wherein the elastic sleeve is a rubber sleeve or a silica gel sleeve; the hardness of the elastic sleeve is 25-50 shore A.
9. The high-frequency sensor suitable for short-range detection according to claim 7, wherein a second step surface and a third step surface are provided on the inner wall of the second shell, the end surface of the second end of the elastic sleeve is in interference fit with the second step surface, and the end surface of the second end of the first shell is in interference fit with the third step surface.
10. The high-frequency sensor suitable for close range detection according to claim 7, further comprising a second potting adhesive, the second potting adhesive being injected into the second shell through the second end of the second shell, the second potting adhesive being connected to the second end of the first shell.
CN201911424031.9A 2019-12-31 2019-12-31 High-frequency sensor suitable for short-range detection Pending CN110967050A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114111928A (en) * 2021-11-23 2022-03-01 成都汇通西电电子有限公司 High-frequency ultrasonic sensor suitable for gas flow detection
CN116295558A (en) * 2022-12-26 2023-06-23 中科三清科技有限公司 Method for manufacturing ultrasonic sensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114111928A (en) * 2021-11-23 2022-03-01 成都汇通西电电子有限公司 High-frequency ultrasonic sensor suitable for gas flow detection
CN114111928B (en) * 2021-11-23 2022-11-01 成都汇通西电电子有限公司 High-frequency ultrasonic sensor suitable for gas flow detection
CN116295558A (en) * 2022-12-26 2023-06-23 中科三清科技有限公司 Method for manufacturing ultrasonic sensor
CN116295558B (en) * 2022-12-26 2024-03-15 中科三清科技有限公司 Method for manufacturing ultrasonic sensor

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