CN110963686A - Epitaxial process quartz weldment and processing method thereof - Google Patents
Epitaxial process quartz weldment and processing method thereof Download PDFInfo
- Publication number
- CN110963686A CN110963686A CN201911331307.9A CN201911331307A CN110963686A CN 110963686 A CN110963686 A CN 110963686A CN 201911331307 A CN201911331307 A CN 201911331307A CN 110963686 A CN110963686 A CN 110963686A
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- Prior art keywords
- quartz
- transparent
- opal
- rotating shaft
- transparent quartz
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- 239000010453 quartz Substances 0.000 title claims abstract description 164
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000003672 processing method Methods 0.000 title abstract description 7
- 239000011022 opal Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 210000001503 joint Anatomy 0.000 claims abstract description 10
- 238000005554 pickling Methods 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 18
- 238000000137 annealing Methods 0.000 claims description 15
- 238000005406 washing Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 241001504664 Crossocheilus latius Species 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 2
- 238000004321 preservation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B23/00—Re-forming shaped glass
- C03B23/20—Uniting glass pieces by fusing without substantial reshaping
- C03B23/207—Uniting glass rods, glass tubes, or hollow glassware
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
Abstract
The invention discloses an epitaxial process quartz weldment and a processing method thereof, and the epitaxial process quartz weldment comprises a first opal quartz, a butt joint hole, a first transparent quartz, a second transparent quartz, a ball body, a quartz rotating shaft, a second opal quartz, a bracket and a silicon wafer, wherein the first opal quartz is provided with the butt joint hole, the first transparent quartz and the first opal quartz are welded into a whole, the lower end of the first transparent quartz is fixedly connected with the second transparent quartz, the lower end of the second transparent quartz is fixedly connected with the ball body, the first transparent quartz and the second transparent quartz are inlaid with the quartz rotating shaft, the first opal quartz is annular, and a quartz ring cushion groove matched with a butt joint flange is arranged on the upper end face of the first opal quartz.
Description
Technical Field
The invention relates to the technical field of quartz, in particular to an epitaxial process quartz weldment and a processing method thereof.
Background
The existing quartz welding parts are of integrally molded structures and poor in transparency, original quartz forms a reaction chamber through composition, reflection is poor, heat source diffusion is fast, and heat preservation treatment cannot be carried out on the whole.
Disclosure of Invention
The invention aims to provide an epitaxial process quartz weldment and a processing method thereof, so as to solve the problems in the background technology.
The purpose of the invention is realized by the following technical scheme: an epitaxial process quartz weldment comprises a first opal quartz, a butt joint hole, a first transparent quartz, a second transparent quartz, a ball body, a quartz rotating shaft, a second opal quartz, a bracket and a silicon wafer, wherein the first opal quartz is provided with the butt joint hole, the first transparent quartz and the first opal quartz are welded into a whole, the lower end of the first transparent quartz is fixedly connected with the second transparent quartz, the ball body is fixedly connected with the lower end of the second transparent quartz, and the quartz rotating shaft is embedded in the first transparent quartz and the second transparent quartz.
Furthermore, the first opal quartz is annular, and a quartz ring pad groove matched with the butt flange is arranged on the upper end face of the first opal quartz.
Further, the first transparent quartz is in a wide-mouth horn shape, and the large end of the wide-mouth horn shape and the step fixed on the lower end of the first opal quartz are welded into a whole in a butt welding mode.
Further, an arc transition area is fixedly arranged at the small end of the first transparent quartz wide-mouth horn shape, and the arc angle of the arc transition area is 100-116 degrees.
Furthermore, the ball head body and the second transparent quartz are fixedly welded into a whole, a through hole is formed in the ball head body, and the diameter of the through hole in the ball head body is the same as that of the through hole formed in the second transparent quartz;
the upper end surface and the lower end surface of the ball head body are horizontal and parallel.
Further, the quartz rotating shaft is divided into an upper section, a middle section and a lower section, the middle section of the quartz rotating shaft is made of second opal quartz, and the upper section and the lower section of the quartz rotating shaft are made of transparent quartz;
the quartz rotating shaft is divided into an upper section, a middle section and a lower section which are fixed together through hot melting welding.
Furthermore, the upper end of the quartz rotating shaft is fixedly connected with 3 brackets which are uniformly distributed on the circumferential surface of the upper end of the quartz rotating shaft;
the bracket is composed of three supporting plates, a horizontal supporting plate is fixedly arranged at the tail end of the bracket, the bracket is fixedly welded with the quartz rotating shaft, and a threaded hole is fixedly formed in the horizontal supporting plate;
and the horizontal supporting plate is fixedly provided with a silicon chip, and the silicon chip is fixedly connected with the horizontal supporting plate through threads.
Further, the distance between the quartz rotating shaft and the first transparent quartz and the second transparent quartz is 30-50 mm.
Further, the distance between the quartz rotating shaft and the first opal mound quartz is 40-60 mm.
A processing method of an epitaxial process quartz weldment comprises the following steps:
1) carrying out surface treatment by an acid washing machine, and carrying out flat bottom flattening by lathe fire processing after treatment;
2) sawing the first transparent quartz at the front end of the end socket of the quartz tube by using a cutting saw, and carrying out acid pickling by using an acid pickling machine;
3) butting a second transparent quartz annealing furnace through a lamp lathe for annealing;
4) performing back gouging treatment on the root in the step 1-3, and performing acid pickling in an acid pickling machine;
5) polishing the whole body, and annealing;
6) cutting according to the actual length of the product butt joint, and pickling in a pickling machine;
7) checking whether the coaxiality meets the requirement, and finely adjusting the product according to the requirement of the finished product to ensure that the coaxiality is within the required coaxiality range;
8) processing the part which is not polished completely on the surface by an MC (monomer casting) processing center according to requirements, and regrinding the part which is not polished completely on the surface to reach the standard of a quartz bell jar, so that the good light transmittance of the product is ensured;
9) performing integral fire throwing on the finished product processed in the step 8, and annealing in an annealing furnace;
10) and finally, inspecting, washing by an acid pickling machine and a packaging machine, drying, and packaging in an inner package.
Compared with the prior art, the invention has the beneficial effects that: the flange materials of the upper chamber and the lower chamber of the invention mainly adopt opaque quartz, the surfaces of the upper chamber and the lower chamber are milky, the irregular reflection is formed, the heat resistance and the heat preservation can be realized, the heat source is prevented from diffusing outwards, the temperature basically has no difference in the processing process, the temperature difference is reduced, and the heat preservation effect is realized.
Drawings
FIG. 1 is a general schematic of the present invention;
FIG. 2 is an assembly view of a quartz rotary shaft according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
As shown in fig. 1-2, the epitaxial quartz weldment comprises a first opal quartz 1, a butt hole 2, a first transparent quartz 3, a second transparent quartz 4, a ball body 5, a quartz rotating shaft 6, a second opal quartz 7, a bracket 8 and a silicon wafer 9, wherein the butt hole 2 is formed in the first opal quartz 1, the first transparent quartz 3 and the first opal quartz 1 are welded into a whole, the lower end of the first transparent quartz 3 is fixedly connected with the second transparent quartz 4, the ball body 5 is fixedly connected below the second transparent quartz 4, and the quartz rotating shaft 6 is embedded in the first transparent quartz 3 and the second transparent quartz 4.
In this embodiment, the first opal mound quartz 1 is annular, and a quartz ring gasket groove matched with the butt flange is arranged on the upper end surface of the first opal mound quartz 1.
In this embodiment, the first transparent quartz 3 is in a wide-mouth horn shape, and a large end of the wide-mouth horn shape is welded integrally with a step fixed on the lower end of the first opal quartz 1.
In this embodiment, an arc transition area is fixedly disposed at the small end of the first transparent quartz 3 in the shape of a wide-mouthed horn, and an arc angle of the arc transition area is 100-116 degrees.
In this embodiment, the ball head body 5 and the second transparent quartz 4 are fixedly welded into a whole, a through hole is formed in the ball head body 5, and the diameter of the through hole in the ball head body 5 is the same as that of the through hole formed in the second transparent quartz 4;
the upper end surface and the lower end surface of the ball head body 5 are horizontal and parallel.
In this embodiment, the quartz rotating shaft 6 is divided into an upper section, a middle section and a lower section, the middle section of the quartz rotating shaft 6 is the second opal quartz 7, and the upper section and the lower section of the quartz rotating shaft 6 are made of transparent quartz;
the quartz rotating shaft 6 is divided into an upper section, a middle section and a lower section which are fixed together through hot melting welding.
In this embodiment, the upper end of the quartz rotating shaft 6 is fixedly connected with brackets 8, and 3 of the brackets 8 are uniformly distributed on the circumferential surface of the upper end of the quartz rotating shaft 6;
the bracket 8 is composed of three supporting plates, a horizontal supporting plate is fixedly arranged at the tail end of the bracket 8, the bracket 8 is fixedly welded with the quartz rotating shaft 6, and a threaded hole is fixedly formed in the horizontal supporting plate;
and a silicon wafer 9 is fixedly arranged on the horizontal supporting plate, and the silicon wafer 9 is fixedly connected with the horizontal supporting plate through threads.
In the present embodiment, the quartz rotation axis 6 is spaced from the first transparent quartz 3 and the second transparent quartz 4 by 30 to 50 mm.
In the embodiment, the distance between the quartz rotating shaft 6 and the first opal mound quartz 1 is 40-60 mm.
A processing method of an epitaxial process quartz weldment comprises the following steps:
1) carrying out surface treatment by an acid washing machine, and carrying out flat bottom flattening by lathe fire processing after treatment;
2) sawing the first transparent quartz 3 at the front end of the quartz tube end enclosure by using a cutting saw, and carrying out acid pickling by using an acid pickling machine;
3) butting the second transparent quartz 4 with a annealing furnace through a lamp lathe for annealing;
4) performing back gouging treatment on the root in the step 1-3, and performing acid pickling in an acid pickling machine;
5) polishing the whole body, and annealing;
6) cutting according to the actual length of the product butt joint, and pickling in a pickling machine;
7) checking whether the coaxiality meets the requirement, and finely adjusting the product according to the requirement of the finished product to ensure that the coaxiality is within the required coaxiality range;
8) processing the part which is not polished completely on the surface by an MC (monomer casting) processing center according to requirements, and regrinding the part which is not polished completely on the surface to reach the standard of a quartz bell jar, so that the good light transmittance of the product is ensured;
9) performing integral fire throwing on the finished product processed in the step 8, and annealing in an annealing furnace;
10) and finally, inspecting, washing by an acid pickling machine and a packaging machine, drying, and packaging in an inner package.
The silicon chip is placed in the cavity through the mechanical arm, the quartz rotating shaft starts to rotate, and the flatness is guaranteed to be less than 0.05mm when the quartz rotating shaft rotates, so that the silicon chip cannot jump in the rotating process, and the temperature reaches about 500 ℃ through irradiation of the infrared heaters outside the upper cavity and the lower cavity. The temperature in the chamber is raised, the air flow flows in the middle, the surface of the silicon wafer completely and fully receives the air to deposit on the surface under the action of rotation, and a layer of uniform film is formed on the surface of the silicon wafer.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. The utility model provides a quartzy weldment of epitaxial technology, includes first opal stone roller quartz (1), butt joint hole (2), first transparent quartz (3), second transparent quartz (4), bulb body (5), quartz rotation axis (6), the opal stone roller quartz of second (7), bracket (8), silicon chip (9), its characterized in that: the quartz ball is characterized in that a butt joint hole (2) is formed in the first opal quartz (1), the first transparent quartz (3) and the first opal quartz (1) are welded into a whole, the lower end of the first transparent quartz (3) is fixedly connected with the second transparent quartz (4), the lower end of the second transparent quartz (4) is fixedly connected with the ball head body (5), and the first transparent quartz (3) and the second transparent quartz (4) are inlaid with a quartz rotating shaft (6).
2. An epitaxially processed quartz weldment according to claim 1, characterized by: the first opal quartz (1) is annular, and a quartz ring gasket groove matched with the butt flange is formed in the upper end face of the first opal quartz (1).
3. An epitaxially processed quartz weldment according to claim 1, characterized by: the first transparent quartz (3) is in a wide-mouth horn shape, and the large end of the wide-mouth horn shape and the step fixed at the lower end of the first opal quartz (1) are welded into a whole in a butt welding mode.
4. An epitaxially processed quartz weldment according to claim 3, wherein: an arc transition area is fixedly arranged at the small end of the first transparent quartz (3) in the shape of a wide-mouth horn, and the arc angle of the arc transition area is 100-116 degrees.
5. An epitaxially processed quartz weldment according to claim 3, wherein: the ball head body (5) and the second transparent quartz (4) are fixedly welded into a whole, a through hole is formed in the ball head body (5), and the diameter of the through hole in the ball head body (5) is the same as that of the through hole formed in the second transparent quartz (4);
the upper end surface and the lower end surface of the ball head body (5) are horizontal and parallel.
6. An epitaxially processed quartz weldment according to claim 1, characterized by: the quartz rotating shaft (6) is divided into an upper section, a middle section and a lower section, the middle section of the quartz rotating shaft (6) is second opal quartz (7), and the upper section and the lower section of the quartz rotating shaft (6) are transparent quartz;
the quartz rotating shaft (6) is divided into an upper section, a middle section and a lower section which are fixed together through hot melting welding.
7. An epitaxially processed quartz weldment according to claim 1, characterized by: the upper end of the quartz rotating shaft (6) is fixedly connected with brackets (8), and 3 brackets (8) are uniformly distributed on the circumferential surface of the upper end of the quartz rotating shaft (6);
the bracket (8) is provided with three supporting plates, a horizontal supporting plate is fixedly arranged at the tail end of the bracket (8), the bracket (8) is fixedly welded with the quartz rotating shaft (6), and a threaded hole is fixedly formed in the horizontal supporting plate;
and a silicon wafer (9) is fixedly installed on the horizontal supporting plate, and the silicon wafer (9) is fixedly connected with the horizontal supporting plate through threads.
8. An epitaxially processed quartz weldment according to claim 1, characterized by: the distance between the quartz rotating shaft (6) and the first transparent quartz (3) and the second transparent quartz (4) is 30-50 mm.
9. An epitaxially processed quartz weldment according to claim 7, wherein: the distance between the quartz rotating shaft (6) and the first opal weight quartz (1) is 40-60 mm.
10. A method of machining an epitaxially processed quartz weldment according to claims 1 to 9, characterized in that the machining process is as follows:
1) carrying out surface treatment by an acid washing machine, and carrying out flat bottom flattening by lathe fire processing after treatment;
2) sawing a first transparent quartz (3) at the front end of the end socket of the quartz tube by using a cutting saw, and carrying out acid washing by using an acid washing machine;
3) butting the second transparent quartz (4) with a annealing furnace through a lamp lathe for annealing;
4) performing back gouging treatment on the root in the step 1-3, and performing acid pickling in an acid pickling machine;
5) polishing the whole body, and annealing;
6) cutting according to the actual length of the product butt joint, and pickling in a pickling machine;
7) checking whether the coaxiality meets the requirement, and finely adjusting the product according to the requirement of the finished product to ensure that the coaxiality is within the required coaxiality range;
8) processing the part which is not polished completely on the surface by an MC (monomer casting) processing center according to requirements, and regrinding the part which is not polished completely on the surface to reach the standard of a quartz bell jar, so that the good light transmittance of the product is ensured;
9) performing integral fire throwing on the finished product processed in the step 8, and annealing in an annealing furnace;
10) and finally, inspecting, washing by an acid pickling machine and a packaging machine, drying, and packaging in an inner package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911331307.9A CN110963686A (en) | 2019-12-21 | 2019-12-21 | Epitaxial process quartz weldment and processing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911331307.9A CN110963686A (en) | 2019-12-21 | 2019-12-21 | Epitaxial process quartz weldment and processing method thereof |
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| CN110963686A true CN110963686A (en) | 2020-04-07 |
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| CN201911331307.9A Pending CN110963686A (en) | 2019-12-21 | 2019-12-21 | Epitaxial process quartz weldment and processing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110981172A (en) * | 2019-12-21 | 2020-04-10 | 张忠恕 | Epitaxial process quartz weldment assembly and processing process thereof |
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| JP2011258895A (en) * | 2010-06-11 | 2011-12-22 | Shin Etsu Handotai Co Ltd | Epitaxial growth system and method of manufacturing epitaxial wafer |
| JP2013138114A (en) * | 2011-12-28 | 2013-07-11 | Applied Materials Inc | Semiconductor manufacturing apparatus and susceptor supporting member |
| CN107578984A (en) * | 2013-03-27 | 2018-01-12 | 应用材料公司 | Base supports portion and the epitaxial growth equipment for including base supports portion |
| CN107706126A (en) * | 2016-08-09 | 2018-02-16 | 北京凯德石英股份有限公司 | A kind of vertical bell jar and processing method |
| US20180254206A1 (en) * | 2017-03-06 | 2018-09-06 | Applied Materials, Inc. | Rotor cover |
| CN212451173U (en) * | 2019-12-21 | 2021-02-02 | 北京凯德石英股份有限公司 | Quartz weldment by epitaxial process |
-
2019
- 2019-12-21 CN CN201911331307.9A patent/CN110963686A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011258895A (en) * | 2010-06-11 | 2011-12-22 | Shin Etsu Handotai Co Ltd | Epitaxial growth system and method of manufacturing epitaxial wafer |
| JP2013138114A (en) * | 2011-12-28 | 2013-07-11 | Applied Materials Inc | Semiconductor manufacturing apparatus and susceptor supporting member |
| CN107578984A (en) * | 2013-03-27 | 2018-01-12 | 应用材料公司 | Base supports portion and the epitaxial growth equipment for including base supports portion |
| CN107706126A (en) * | 2016-08-09 | 2018-02-16 | 北京凯德石英股份有限公司 | A kind of vertical bell jar and processing method |
| US20180254206A1 (en) * | 2017-03-06 | 2018-09-06 | Applied Materials, Inc. | Rotor cover |
| CN212451173U (en) * | 2019-12-21 | 2021-02-02 | 北京凯德石英股份有限公司 | Quartz weldment by epitaxial process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110981172A (en) * | 2019-12-21 | 2020-04-10 | 张忠恕 | Epitaxial process quartz weldment assembly and processing process thereof |
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