CN110957426A - 一种电子传输材料及其应用 - Google Patents

一种电子传输材料及其应用 Download PDF

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CN110957426A
CN110957426A CN201811138124.0A CN201811138124A CN110957426A CN 110957426 A CN110957426 A CN 110957426A CN 201811138124 A CN201811138124 A CN 201811138124A CN 110957426 A CN110957426 A CN 110957426A
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electron transport
transport material
layer
rare earth
earth metal
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段炼
宾正杨
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Tsinghua University
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Tsinghua University
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Abstract

本发明属于有机电致发光技术领域，具体涉及一种电子传输材料及其应用。本发明所提供的电子传输材料，包括具有配位性能的电子传输材料主体和掺杂在其中的稀土金属。通过采用稀土金属代替碱金属来进行电子传输材料主体的n型掺杂，能够有效的降低电子由阴极注入电子传输层的能隙，降低驱动电压，同时还克服了掺杂剂迁移至发光层而导致器件效率降低和寿命缩短的问题。通过采用具有配位性能的电子传输材料主体与稀土金属联用，能够有效地进行电子的转移与传导。并且，稀土金属的蒸镀温度较低，能够很好的与电子传输材料主体实现共同蒸镀，提高掺杂效率。

Description

一种电子传输材料及其应用
技术领域
本发明属于有机电致发光技术领域，具体涉及一种电子传输材料及其应用。
背景技术
有机发光二极管(OLEDs)是一种多层有机薄膜结构、可通过电致发光的器件。它拥有多种超越LCD(液晶显示器)的显示特性和品质，凭借其低能耗和柔韧性等优良特性，具有很好的应用前景，将成为下一代主流平板显示器。OLED器件的结构包括阳极、有机发光层和阴极，其发光原理如下：当施加正向外加偏压时，空穴和电子在克服界面能障后分别由阳极和阴极注入，进入空穴传输层中材料的HOMO能阶和电子传输层中材料的LUMO能阶；接着，电荷在外部电场的驱动下传递至空穴传输层和电子传输层的界面，界面的能阶差使得界面上电荷累积；当电子、空穴在有发光特性的有机物质内再结合形成激发子，该激发子以光或热的形式释放能量而回到基态。
通常使用的电子传输材料(ETM)的LUMO能级在-3.0eV附近，而金属阴极的功函数一般大于4.0eV，因此当电子直接从金属阴极注入到电子传输层时，存在较大的能隙阻碍电子的注入，使得器件驱动电压较高，同时使得到达发光层中的电子空穴不平衡，降低器件效率和缩短器件寿命。现有技术中通常采用n-型掺杂的方法降低电子传输材料的LUMO能级，减小能隙，进而促进电子从金属阴极注入到电子传输层。n型掺杂的机理是掺杂剂将电子转移到ETM的LUMO能级上，从而实现电荷转移，提高自由载流子浓度。电子传输材料的LUMO能级在-3.0eV左右，这就要求掺杂剂功函数必须在3.0eV以下，才能将电子高效地转移到ETM的LUMO能级上。但是功函数小于3.0eV的物质，其还原性十分强，很容易被空气中的氧气氧化，因此适用于OLED的n型掺杂剂种类较少。例如现有技术中最常用的碱金属，其在空气中很容易被氧化，钠、钾、铯等甚至会发生自燃，难以长时间存储，也不便于制备操作。
虽然通过将碱金属化合物在真空下热分解可以避免直接在空气中使用碱金属，但是由于碱金属化合物在真空中分解时存在严重的放气现象，使蒸镀薄膜时的真空度较差，造成成膜性和气氛的不稳定，故难以实际应用。另外，碱金属离子在有机薄膜中具有很强的迁移特性，容易在器件工作时迁移至发光层中形成激子淬灭中心，降低器件效率和寿命。
因此，如何找到能够替代碱金属的新材料来对电子传输材料进行n型掺杂，是本领域技术人员亟待解决的技术问题。
发明内容
本发明的目的在于解决现有技术中电子传输材进行的n型掺杂时操作条件苛刻且掺杂剂碱金属容易在工作时迁移形成机子淬灭中心而降低器件效率和寿命的缺陷，进而提供一种新型的电子传输材料。
本发明的上述目的是通过以下技术方案实现的：
一种电子传输材料，包括电子传输材料主体和掺杂在所述电子传输材料主体中的稀土金属；
所述电子传输材料主体具有配位性能。
所述稀土金属与所述电子传输主体材料的体积比为(1:100)～(50:100)。
所述稀土金属与所述电子传输主体材料的体积比为2:15～1:6。
所述稀土金属为镱、钕、铈、镧中的一种或多种。
所述电子传输主体材料具有含N或O的相邻杂环，可形成配位结构。
所述电子传输主体材料具有如下式(1)至式(12)所述的结构：
Figure BDA0001813887700000031
其中R1至R8相同或不同，选自氢、烷基、共轭芳香基团、共轭杂环、甲氧基、氨基及烷基取代的氨基、氰基、卤族基、醛基、酮基、酯基和乙酰丙酮基。
所述共轭芳香基团为苯基、萘基或蒽基；
所述共轭杂环为吡啶基或喹啉基。
所述电子传输材料主体具有如式(2-1)至式(9-1)所示的结构：
Figure BDA0001813887700000041
Figure BDA0001813887700000051
Figure BDA0001813887700000061
Figure BDA0001813887700000071
Figure BDA0001813887700000081
Figure BDA0001813887700000091
Figure BDA0001813887700000101
Figure BDA0001813887700000111
Figure BDA0001813887700000121
所述的电子传输材料在有机发光器件电子传输层中的应用。
一种有机电致发光器件，包括基板以及依次形成在所述基板上的发光器件，包括基板以及依次设置在所述基板上的第一电极层、发光层、电子传输层和第二电极层，所述电子传输层包括所述的电子传输材料。
还包括电子注入层、空穴阻挡层、电子阻挡层、空穴传输层、空穴注入层中的至少一层。
本发明的技术方案具有以下有益效果：
1.本发明所提供的电子传输材料，包括具有配位性能的电子传输材料主体和掺杂在其中的稀土金属。通过采用稀土金属代替碱金属来进行电子传输材料主体的n型掺杂，能够有效的降低电子由阴极注入电子传输层的能隙，降低驱动电压，同时还克服了掺杂剂迁移至发光层而导致器件效率降低和寿命缩短的问题。通过采用具有配位性能的电子传输材料主体与稀土金属联用，能够有效地进行电子的转移与传导。并且，稀土金属的蒸镀温度较低，能够很好的与电子传输材料主体实现共同蒸镀，提高掺杂效率。
2.本发明所提供的电子传输材料，优选稀土金属的掺杂比例为体积比2～30％，并优选电子传输材料主体，既保证了较小的驱动电压同时又保证了电子传输层的稳定性。
附图说明
为了更清楚地说明本发明具体实施方式中的技术方案，下面将对具体实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的有机电致发光器件的结构示意图；
图2为实施例1和对比例的亮度-电压曲线图；
图3为实施例1和对比例的电流密度-亮度曲线图。
上述附图中的附图标记说明如下：
01-基板；02-第一电极层；03-第二电极层；04-空穴注入层；05-空穴传输层；06-发光层；07-空穴阻挡层；08-电子传输层。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。在附图中，为了清晰起见，会夸大层和区域的尺寸和相对尺寸。应当理解的是，当元件例如层、区域或基板被称作“形成在”或“设置在”另一元件“上”时，该元件可以直接设置在所述另一元件上，或者也可以存在中间元件。相反，当元件被称作“直接形成在”或“直接设置在”另一元件上时，则不存在中间元件。
本发明的有机电致发光器件的制备工艺同现有技术，其中电子传输层08中稀土金属的蒸镀速率应较慢，为0.1埃/秒，在此速率下，电子传输层的具有配位性能的主体材料和掺杂材料稀土金属之间接触更加充分，稀土金属在主体材料中分散更加均匀。
在以下实施例的描述中，M-ETM中的M代表稀土金属，ETM代表电子传输材料主体。
实施例1
本实施例提供了一种有机电致发光器件，其器件结构如下：
ITO/NPB(40nm)/Alq3(30nm)/Bphen(90nm)/20％M-ETM(10nm)/Al；
第一电极层02(阳极ITO)、空穴传输层05(NPB)、发光层06(Alq3)、空穴阻挡层07(Bphen)，电子传输层08(20％M-ETM)、第二电极层03(阴极Al)。其中，10％代表体积掺杂比例，即每100埃电子传输材料主体中掺杂有10埃稀土金属。
本实施例中ETM选用Bphen，掺杂的稀土金属选用Ce。其中Bphen如式(1-1)所示。
Figure BDA0001813887700000141
实施例2
本实施例提供了一种有机电致发光器件，其器件结构如下：
ITO/BCP(10nm)/Alq3(30nm)/Bphen(90nm)/10％M-ETM(10nm)/Al；
第一电极层02(阳极ITO)、空穴传输层05(BCP)、发光层06(Alq3)、空穴阻挡层07(Bphen)，电子传输层08(10％M-ETM)、第二电极层03(阴极Al)。其中，10％代表体积掺杂比例，即每100埃电子传输材料主体中掺杂有10埃稀土金属。
本实施例中ETM选用BCP，掺杂的稀土金属选用Ce。其中BCP如式(1-2)所示。
Figure BDA0001813887700000151
实施例3
本实施例提供了一种有机电致发光器件，其器件结构如下：
ITO/HATCN(10nm)/NPB(30nm)/Alq3(30nm)/Bphen(20nm)/5％La-Bphen10nm/Ag。
第一电极层02(阳极ITO)、空穴注入层04(HAT-CN)、空穴传输层05(NPB)、发光层06(Alq3)、空穴阻挡层07(Bphen)，电子传输层08(5％La-Bphen)、第二电极层03(阴极Ag)。其中，5％代表体积掺杂比例，即蒸镀厚度100埃电子传输材料时同时蒸镀5埃稀土金属。其中，HAT-CN如式(1-3)所示
Figure BDA0001813887700000161
实施例4
本实施例提供的有机电致发光器件与实施例3提供的有机电致发光器件结构相同，区别仅在于本实施例中La的掺杂比例为体积比14.3％。
实施例5
本实施例提供的有机电致发光器件与实施例3提供的有机电致发光器件结构相同，区别仅在于本实施例中La的掺杂比例为体积比25％。
实施例6至实施例31的器件结构如下：
ITO/HATCN(10nm)/NPB(30nm)/Alq3(30nm)/Bphen(20nm)/x％M-ETM10nm/Ag。
表1实施例6至实施例31的电子传输层(x％M-ETM)具体组成
Figure BDA0001813887700000162
Figure BDA0001813887700000171
实施例31至实施例33的结构如同器件实施例6-11。
其中电子传输层08的中的EMT分别采用式(6-1)、式(6-2)、式(6-3)所示结构的化合物，掺杂的金属M分别为La、Sm、Eu，掺杂比例分别为20vol％、30vol％和40vol％。
实施例33至35的结构如同器件实施例6-11。
其中电子传输层08的中的EMT分别采用式(7-1)、式(7-2)、式(7-3)所示结构的化合物，掺杂的金属M分别为Pm、Tm、Gd，掺杂比例分别为22vol％、25vol％和28vol％。
实施例36至108的结构如同器件实施例6-11。
其中电子传输层08的中的EMT分别采用式(8-1)至式(8-73)所示结构的化合物，器件36至器件50掺杂的金属M均为Ce，掺杂比例均为20vol％；器件51至器件70掺杂的金属M均为Dy，掺杂比例均为25vol％；器件71至器件90掺杂的金属M均为Er，掺杂比例均为28vol％；器件91至器件108掺杂的金属M均为Ho，掺杂比例均为30vol％。
对比例
本对比例提供了一种有机电致发光器件，其器件结构为：
ITO/HATCN(10nm)/NPB(30nm)/Alq3(30nm)/Bphen(30nm)/Mg:Ag。
第一电极层02(阳极ITO)、空穴注入层04(HAT-CN)、空穴传输层05(NPB)、发光层06(Alq3)、电子传输层08(Bphen)、第二电极层03(阴极Mg:Ag)。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (11)

1.一种电子传输材料，其特征在于，包括电子传输材料主体和掺杂在所述电子传输材料主体中的稀土金属；
所述电子传输材料主体具有配位性能。
2.根据权利要求1所述的电子传输材料，其特征在于，所述稀土金属与所述电子传输主体材料的体积比为(1:100)～(50:100)。
3.根据权利要求2所述的电子传输材料，其特征在于，所述稀土金属与所述电子传输主体材料的体积比为1:4～1:6。
4.根据权利要求1-3任一项所述的电子传输材料，其特征在于，所述稀土金属为镱、钕、铈、镧中的一种或多种。
5.根据权利要求1-4任一项所述的电子传输材料，其特征在于，所述电子传输主体材料具有含N或O的相邻杂环，可形成配位结构。
6.根据权利要求5所述的电子传输材料，其特征在于，所述电子传输主体材料具有如下式(1)至式(12)所述的结构：
Figure FDA0001813887690000011
其中R1至R8相同或不同，选自氢、烷基、共轭芳香基团、共轭杂环、甲氧基、氨基及烷基取代的氨基、氰基、卤族基、醛基、酮基、酯基和乙酰丙酮基。
7.根据权利要求6所述的电子传输材料，其特征在于，所述共轭芳香基团为苯基、萘基或蒽基；
所述共轭杂环为吡啶基或喹啉基。
8.根据权利要求1-7任一项所述的电子传输材料，其特征在于，所述电子传输材料主体具有如式(2-1)至式(9-1)所示的结构：
Figure FDA0001813887690000021
Figure FDA0001813887690000031
Figure FDA0001813887690000041
Figure FDA0001813887690000051
Figure FDA0001813887690000061
Figure FDA0001813887690000071
Figure FDA0001813887690000081
Figure FDA0001813887690000091
Figure FDA0001813887690000101
9.权利要求1-8任一项所述的电子传输材料在有机发光器件电子传输层中的应用。
10.一种有机电致发光器件，包括基板以及依次形成在所述基板上的发光器件，包括基板以及依次设置在所述基板上的第一电极层、发光层、电子传输层和第二电极层，其特征在于，所述电子传输层包括权利要求1-8任一项所述的电子传输材料。
11.根据权利要求10所述的有机电致发光器件，其特征在于，还包括电子注入层、空穴阻挡层、电子阻挡层、空穴传输层、空穴注入层中的至少一层。
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CN103594659A (zh) * 2012-08-17 2014-02-19 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN107464885A (zh) * 2016-06-06 2017-12-12 清华大学 一种有机电致发光器件
CN108470840A (zh) * 2018-05-31 2018-08-31 上海天马有机发光显示技术有限公司 有机发光显示面板及显示装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594659A (zh) * 2012-08-17 2014-02-19 海洋王照明科技股份有限公司 一种有机电致发光器件及其制备方法
CN107464885A (zh) * 2016-06-06 2017-12-12 清华大学 一种有机电致发光器件
CN108470840A (zh) * 2018-05-31 2018-08-31 上海天马有机发光显示技术有限公司 有机发光显示面板及显示装置

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