CN110954803A - Semiconductor device test system and test method thereof - Google Patents

Semiconductor device test system and test method thereof Download PDF

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Publication number
CN110954803A
CN110954803A CN201911150174.5A CN201911150174A CN110954803A CN 110954803 A CN110954803 A CN 110954803A CN 201911150174 A CN201911150174 A CN 201911150174A CN 110954803 A CN110954803 A CN 110954803A
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China
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switch
transistor
test
semiconductor device
diode
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CN201911150174.5A
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Chinese (zh)
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韩正
王刚
朱国军
唐德平
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Hefei Kewei Power System Co Ltd
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Hefei Kewei Power System Co Ltd
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Priority to CN201911150174.5A priority Critical patent/CN110954803A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2601Apparatus or methods therefor
    • G01R31/2603Apparatus or methods therefor for curve tracing of semiconductor characteristics, e.g. on oscilloscope

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  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a semiconductor device test system and a test method thereof, wherein the test system comprises an upper computer, an oscilloscope, a master control system PLC, a circuit control module and a test box body, an automatic tool is arranged in the test box body, a tested piece is placed on the automatic tool, a test fixture is arranged right above the tested piece, the automatic tool comprises a driving device, the driving device drives the automatic tool to move so as to drive the tested piece to be connected with the test fixture, and the master control system PLC is respectively connected with the test box body, the test fixture, a main circuit unit and a gate pole driving unit; the upper computer is connected with an oscilloscope, and the oscilloscope is connected with the test box body; the invention has the advantages that: a semiconductor device testing system with a specific testing circuit and a specific testing system structure is designed, theories are combined with practices, and all devices in the system are matched with each other to complete testing of the semiconductor device.

Description

Semiconductor device test system and test method thereof
Technical Field
The invention relates to the field of semiconductor device characteristic testing, in particular to a semiconductor device testing system and a semiconductor device testing method.
Background
The IGBT is a mainstream semiconductor switching device widely used in modern medium and high power converters, and its switching characteristics determine the switching loss, power density, device stress, and electromagnetic compatibility of the device, directly affecting the performance of the converter. The characteristic research of the IGBT comprises static characteristic research and dynamic characteristic research, the static characteristic is often obtained from datasheets (data sheets), and the dynamic characteristic needs to be measured manually. In the current national standard and in the IEC (International electrotechnical commission) standard, the measurement of dynamic characteristics is based on a double-pulse test. The dynamic characteristics of the voltage Vce and the current Ie in the dynamic process are reflected by measuring the waveforms. However, most of the current semiconductor device test systems are not considered in detail during design, and no detailed and standard measurement means is provided in the measurement link, so that the measurement method is limited to theoretical analysis.
Chinese patent publication No. CN109459675A discloses a SiC power device application characteristic test platform, which comprises a hardware test platform, a data acquisition oscilloscope, an NI digital controller, a high-voltage direct-current power supply and a LabVIEW upper computer monitoring device; the LabVIEW upper computer monitoring device transmits the test working condition setting and the sampling setting to the NI digital controller, the data acquisition oscilloscope and the high-voltage direct-current power supply through the communication interface respectively; the NI digital controller sets driving parameters of a testing device and implements the testing instruction on a hardware testing platform according to the instruction of the LabVIEW upper computer, and the oscilloscope collects corresponding data according to the instruction of the LabVIEW upper computer; the high-voltage direct-current power supply is responsible for providing corresponding direct-current voltage according to the test working condition and is used for pre-charging a bus capacitor of the test circuit, and the hardware test platform receives a control instruction of the controller to complete test work. However, specific test circuits and test system structures are not designed for testing, and only the research on the method theory is remained. Therefore, it is necessary to provide a testing system capable of testing semiconductor devices to detect the performance of the semiconductor devices and further improve the application level of the semiconductor devices.
Disclosure of Invention
The technical problem to be solved by the present invention is how to provide a semiconductor device testing system and a testing method thereof, which can test a semiconductor device.
The invention solves the technical problems through the following technical means: a semiconductor device testing system comprises an upper computer (30), an oscilloscope (40), a master control system PLC, a circuit control module and a testing box body (50), wherein an automatic tool (70) is arranged in the testing box body (50), a tested piece (6) is placed on the automatic tool (70), a testing clamp (80) is arranged right above the tested piece (6), the automatic tool (70) comprises a driving device (13), the driving device (13) drives the automatic tool (70) to move so as to drive the tested piece (6) to be connected with the testing clamp (80), and the master control system PLC is respectively connected with the testing box body (50), the testing clamp (80) and the circuit control module; the upper computer (30) is connected with the oscilloscope (40), and the oscilloscope (40) is connected with the test box body (50).
An automatic tool (70) is arranged in a test box body (50), a driving device (13) drives the automatic tool (70) to move so as to drive a tested piece (6) to be connected with a test fixture (80), a main circuit unit provides voltage and current required by the test for the tested piece (6) so as to complete the test, an upper computer (30) sets test conditions, edits test results, sends data to an oscilloscope (40) and a master control system PLC and receives data of the oscilloscope (40) and the master control system PLC simultaneously, and the oscilloscope (40) displays test waveforms and test data. The invention designs a specific test circuit and a test system structure, combines theories with practices, and mutually cooperates all devices of the whole semiconductor device test system to finish the test of the semiconductor device.
Preferably, the semiconductor device test system further comprises a UPS (uninterrupted power supply), a first optical fiber transceiver, a second optical fiber transceiver, a temperature regulator, an insulation detector, a leakage current detector, a high voltage power supply, an inductive load, a measurement unit and an alarm indicator lamp (60), the circuit control module comprises a main circuit unit, a gate drive unit, a pulse digital power amplification unit, a high voltage generation unit and a current sampling unit, the oscilloscope (40) is connected with the first optical fiber transceiver through the Ethernet, the upper computer (30) is connected with the first optical fiber transceiver through the Ethernet, the first optical fiber transceiver is connected with the second optical fiber transceiver through an optical fiber, and the second optical fiber transceiver is respectively connected with the main control system PLC, the temperature regulator, the insulation detector, the leakage current detector, the gate drive unit and the high voltage power supply through the Ethernet, the high-voltage power supply is connected with the main circuit unit, and the inductive load is respectively connected with the main circuit unit and the master control system PLC;
the measuring unit is respectively connected with the master control system PLC and the test box body (50); the oscilloscope (40) is connected with the test box body (50) through the measuring unit; the main control system PLC comprises a test fixture signal control interface and a panel key state monitoring unit, the main control system PLC is connected with a test fixture (80) through the test fixture signal control interface, and the panel key state monitoring unit is used for monitoring the panel key state; the master control system PLC is connected with an alarm indicator lamp (60); the UPS power supply is respectively connected with the upper computer (30), the first optical fiber transceiver, the second optical fiber transceiver, the oscilloscope (40), the master control system PLC, the temperature regulator, the insulation detector, the leakage current detector, the gate pole driving unit and the high-voltage power supply.
Preferably, the main circuit unit comprises switches K2 to K11, an anti-reverse diode D1, a resistor R1, a switch K1, a support capacitor C1, a current-limiting and current-limiting transistor Q1, a thyristor Q2 and a thyristor Q3 which are numbered sequentially, the inductive load comprises an inductor L1, an inductor L2, an inductor L3 and an inductor L4, the device under test (6) comprises a first transistor Q4 and a second transistor Q5, the positive electrode of the anti-reverse diode D1 is connected with the positive electrode of a high-voltage power supply, one end of the resistor R1 is connected with the negative electrode of the anti-reverse diode D1, the other end of the resistor R1 is connected with one end of the switch K1, the other end of the switch K1 is connected with the negative electrode of the high-voltage power supply, one end of the support capacitor C1 is connected with one end of a resistor R1, and the other end of the support capacitor C1 is; the drain of the current-limiting transistor Q1 is connected to one end of the supporting capacitor C1, and the source of the current-limiting transistor Q1 is connected to one end of the switch K2; the other end of the switch K2 is connected with one end of the switch K3, the other end of the switch K3 is connected with the negative electrode of the high-voltage power supply, and one end of the inductor L1, one end of the inductor L2, one end of the inductor L3 and one end of the inductor L4 are connected together and connected with the other end of the switch K2;
the other end of the inductor L1 is connected with one end of the switch K4, the other end of the inductor L2 is connected with one end of the switch K5, the other end of the inductor L3 is connected with one end of the switch K6, the other end of the inductor L4 is connected with one end of the switch K7, and the other end of the switch K4, the other end of the switch K5, the other end of the switch K6 and the other end of the switch K7 are connected together and connected to one end of the switch K8; one end of the switch K8 is connected with one end of the switch K9, the other end of the switch K8 is connected with one end of the switch K10, the other end of the switch K9 is connected with the first end of the thyristor Q3, the second end of the thyristor Q3 is connected with the first end of the thyristor Q2 through the switch K11, and the second end of the thyristor Q2 is connected with the other end of the switch K10; one end of the switch K10 is connected to the drain of the first transistor Q4, the source of the first transistor Q4 is connected to the drain of the second transistor Q5, and the source of the second transistor Q5 is connected to the first end of the thyristor Q3.
The switch K2 and the switch K3 of the main circuit unit are switches for switching the first transistor or the second transistor of the tested device (6) to be connected into the test loop, and when the switch K2 is closed and the switch K3 is opened, the second transistor of the tested device (6) is connected into the test loop; the switch K4, the switch K5, the switch K6 and the switch K7 are used for switching 4 groups of different inductance values; when the switch K8 or the switch K9 is closed, the test condition of the 1 st type short circuit is realized; when the switch K10 or the switch K11 is closed, the testing condition of the 2 nd type short circuit is realized by controlling the conducting signals of the thyristor Q2 and the thyristor Q3, so that the main circuit unit can realize the 1 st type short circuit test and the 2 nd type short circuit test.
Preferably, the main circuit unit further includes a diode D2, a diode D3, a switch K12 and a switch K13, one end of the switch K12 is connected to one end of the switch K10, the other end of the switch K12 is connected to the cathode of the diode D2, the anode of the diode D2 is connected to the cathode of the diode D3 through a switch K14, and the anode of the diode D3 is connected to the first end of the thyristor Q3.
Preferably, the main circuit unit further includes a current sensor CT1 and a current sensor CT2, the current sensor CT1 is connected between the switch K12 and the first transistor Q4, and the current sensor CT2 is connected between the anode of the diode D3 and the second transistor Q5.
Preferably, the main circuit unit further includes a switch K14, a switch K15 and a switch K16, one end of the switch K14 is connected to the source of the current-limiting transistor Q1, one end of the switch K15 is connected to a connection line between the other end of the supporting capacitor C1 and the other end of the switch K9, one end of the switch K16 is connected to a connection line between the switch K5 and the switch K6, one end of the switch K8 is connected to the first end of the thyristor Q2, the first end of the thyristor Q2 is connected to the anode of the diode D2, and the anode of the diode D2 is connected to the source of the transistor Q4; the other end of the switch K14, the other end of the switch K15, and the other end of the switch K16 are all grounded.
Preferably, the gate driving unit comprises a switching power supply, a transistor Q6, a transistor Q7, a diode D4, an inductor L5, a resistor R2, a resistor R3, a first driving module DRIVE-1 and a second driving module DRIVE-2, the switching power supply is respectively connected with the cathode of the diode D4 and the source of the transistor Q6, and the anode of the diode D4 is connected with the drain of the transistor Q6; the dotted terminal of the inductor L5 is connected to the cathode of the diode D4, and the unlike terminal of the inductor L5 is connected to the anode of the diode D4; the drain electrode of the transistor Q7 is connected with the synonym terminal of the inductor L5, the source electrode of the transistor Q7 is connected with a tested device (6), and the source electrodes of the tested device (6) and the transistor Q6 are both grounded;
the first driving module DRIVE-1 is connected with a resistor R2 in parallel, one end of the resistor R2 is connected with the grid electrode of a transistor Q6, and the other end of the resistor R2 is connected with the source electrode of a transistor Q6; the second driving module DRIVE-2 is connected in parallel with a resistor R3, one end of the resistor R3 is connected with the gate of the transistor Q7, and the other end of the resistor R3 is connected with the source of the transistor Q7.
The gate driving unit uses 2 transistors as circuit switches, at an initial moment, the transistor Q6 is turned on, the transistor Q7 is turned off, current flows through the inductor L5, the voltage provided by an external switching power supply is a constant value, and constant gate current can be obtained by controlling the on-time t of the transistor Q6, so that the requirement of constant gate current in the gate charge measurement process is met.
Preferably, the test fixture comprises an epoxy plate (1), a first signal probe (2), a first connecting end (3), a second signal probe (4) and a second connecting end (5), wherein the first connecting end (3) is arranged on one side of the epoxy plate (1), the position, close to the first connecting end (3), of the top of the epoxy plate (1) is connected with the first signal probe (2) through a connecting column, a plurality of second signal probes (4) are further arranged at the bottom of the epoxy plate (1), and the second connecting end (5) is arranged on one side, close to the second signal probe (4), of the bottom of the epoxy plate (1).
Preferably, the first connection end (3) comprises a first power probe (301), a second power probe (302) and a third power probe (303), and the first power probe (301), the second power probe (302) and the third power probe (303) are sequentially arranged on the side surface of the epoxy board (1) from top to bottom; the number of the first power probe (301), the second power probe (302) and the third power probe (303) is a plurality, the first power probe (301) is a bus positive pole, the second power probe (302) is an inductance layer (27), and the third power probe (303) is a bus negative pole.
Preferably, the second connection end (5) comprises a plurality of fourth power probes (501), and the fourth power probes (501) are arranged at the bottom of the epoxy board (1).
According to the invention, the first signal probe, the second connecting end and the second signal probe of the test fixture (80) are connected with the tested piece, and the original screw connection tightening mode is replaced by the direct connection mode of the probes, so that the test fixture is convenient to detect and use, time-saving and labor-saving, convenient to disassemble and further improves the working efficiency. In addition, the first power probe, the second power probe and the third power probe are connected with the laminated busbar connecting device (90), so that the tested piece is electrically connected with the test circuit, and the connection is convenient and detachable.
Preferably, an automatic tool (70) is arranged in the test box body (50), a laminated busbar connecting device (90) is arranged on the rear side of the test box body, the laminated busbar connecting device (90) is connected with the test fixture (80), the test fixture (80) is connected with a tested piece (6), the test fixture (80) is arranged at the top of the automatic tool (70), and the tested piece (6) is placed on the automatic tool (70); the automatic tool (70) also comprises a shell (11), a heating table (12) for placing the tested piece (6), a guide device (14), a linear slide rail (15) and a fixing device (16), wherein,
the inboard of casing (11) is fixed and is provided with linear slide rail (15), the outer wall sliding connection in both sides of linear slide rail (15) and fixing device (16), be provided with guider (14) that a plurality of is used for accurate installation location on fixing device (16), the top surface of fixing device (16) is the fixed warm table (12) that is provided with still, warm table (12) cooperate with drive arrangement (13) to be connected and by drive arrangement (13) drive motion, drive arrangement (13) and casing (11) fixed connection.
Preferably, the shell (11) comprises a bottom plate (1101), side plates (1102) and a rear side plate (1103), wherein the side plates (1102) are symmetrically and fixedly arranged at the top of the bottom plate (1101) along two ends of a long side, the rear side plate (1103) is further fixedly arranged at the top of the bottom plate (1101), two ends of the rear side plate (1103) are respectively attached to the two side plates (1102) and connected into a whole, and linear sliding rails (15) are fixedly connected to the inner walls of the side plates (1102).
Preferably, the bottom of warm table (12) is provided with heat insulating board (17) of laminating mutually, heat insulating board (17) and fixing device (16)'s top fixed connection, just a plurality of heating hole has been seted up to the side that warm table (12) are close to rear side board (1103), placed the heating rod in the heating hole and be used for making warm table (12) heating.
Preferably, the driving device (13) comprises a first air cylinder (1301), a second air cylinder (1302), a third air cylinder (1303) and a pneumatic finger (1304), wherein,
the first air cylinder (1301) is fixedly arranged at the top of the bottom plate (1101) through a bolt and far away from one side of the rear side plate (1103), and the first air cylinder (1301) is stretched and shortened and clamped with the fixing device (16) to limit the sliding of the fixing device (16);
the second air cylinder (1302) is arranged between the rear side plate (1103) and the first air cylinder (1301) and is fixedly connected with the bottom plate (1101), the second air cylinder (1302) works to drive the fixing device (16) to move up and down along the guide device (14), and one end, close to the rear side plate (1103), of the fixing device (16) is further connected with the pneumatic finger (1304);
pneumatic finger (1304) is fixed to be set up in the flexible end of third cylinder (1303), third cylinder (1303) link to each other with posterior lateral plate (1103), and the flexible end of third cylinder (1303) runs through posterior lateral plate (1103) and is concertina movement, cooperation pneumatic finger (1304) drive fixing device (16) horizontal reciprocating motion.
Preferably, the guiding device (14) comprises a guide pillar (1401) and a guide sleeve (1402), the guide pillar (1401) penetrates through the guide sleeve (1402), and the guide pillar (1401) and the guide sleeve (1402) are both connected with the fixing device (16).
Preferably, the fixing device (16) comprises a guide sleeve fixing plate (1601) and a guide post fixing plate (1602), the guide sleeve fixing plate (1602) is in an L shape, a transverse part of the fixing device (16) is used for being connected with the guide sleeve fixing plate (1601) and supporting the guide sleeve fixing plate (1601), a longitudinal part of the guide sleeve fixing plate (1602) close to a side wall surface of the side plate (1102) is connected with the linear sliding rail (15) in a sliding manner, and a limiting plate is further arranged between the two guide sleeve fixing plates (1602);
the limiting plate is provided with a cavity matched with the telescopic end of the first air cylinder (1301) in size, and the first air cylinder (1301) telescopically penetrates through the cavity to limit the fixing device (16);
blind holes are formed in four corners of the guide pillar fixing plate (1602), through holes coinciding with the blind holes are formed in four corners of the guide sleeve fixing plate (1601), and the guide sleeve fixing plate (1601) is fixedly connected with the guide sleeve (1402); the guide pillar (1401) penetrates through the through hole and is inserted into the blind hole.
Preferably, the laminated busbar connection device (90) comprises a power input end (20), a first laminated busbar (21), a supporting capacitor C1, a current limiting transistor Q1, a second laminated busbar (24) and a current sensor (25), a supporting capacitor C1 is fixedly arranged on a bolt at the rear side of the first laminated busbar (21), a current limiting transistor Q1 is arranged at the bottom of the first laminated busbar (21), the lower end of the current limiting transistor Q1 is also provided with a second laminated busbar (24), the right side of the second laminated busbar (24) is provided with a current sensor (25), the number of the current sensors (25) is two, namely a current sensor CT1 and a current sensor CT2, the left side of the lower end of the second laminated busbar (24) sequentially comprises a bus positive electrode layer (26), an inductance layer (27) and a bus negative electrode layer (28) from top to bottom; the bus positive electrode layer (26), the inductance layer (27) and the bus negative electrode layer (28) are sequentially connected with the first power probe (301), the second power probe (302) and the third power probe (303).
In the test box body (50), the second cylinder jacks up the fixing device, the tested piece is reliably connected with the laminated busbar connecting device (90), the first cylinder extends to be matched with the limiting plate to fix the heating table, after the test is finished, the first cylinder contracts, the second cylinder descends, the position of the heating table descends, the third cylinder works to clamp the guide sleeve fixing plate, the third cylinder continues to extend, two clamping rods are arranged on the pneumatic finger, the distance between the two clamping rods is matched with the guide sleeve fixing plate and used for driving the guide sleeve fixing plate to move, the guide sleeve fixing plate drives the guide pillar fixing plate to slide, the heating platform is pushed out, the tested piece is conveniently taken out, the multiple cylinders can realize multidirectional movement of the tested piece, the movement precision is high, the fixing mode is reliable, and therefore stability and rapidness are achieved.
The invention also provides a test method of the semiconductor device test system, which comprises the following steps:
the method comprises the following steps: inputting an instruction through the upper computer (30), opening the test box body (50), and placing the tested piece (6) on the automatic tool (70);
step two: the test box body (50) is closed by inputting an instruction through the upper computer (30), and a key on a panel of the upper computer (30) is operated to enable the automatic tool (70) to move upwards, and at the moment, the tested piece (6) is connected with the test fixture (80);
step three: operating the upper computer (30), selecting a test item on a panel of the upper computer (30), clicking to start testing, and operating the master control system PLC according to an instruction of the upper computer (30);
step four: after the test is finished, the data of the oscilloscope (40) are automatically transmitted to the upper computer (30), and a user obtains the test data through the upper computer (30).
The invention has the advantages that:
(1) the automatic testing device is characterized in that an automatic tool (70) is arranged in a testing box body (50), a driving device drives the automatic tool (70) to move so as to drive a tested piece (6) to be connected with a testing clamp (80), a main circuit unit provides voltage and current required by testing for the tested piece (6) so as to complete testing, an upper computer sets testing conditions, edits testing results, sends data to an oscilloscope (40) and a master control system PLC (programmable logic controller) and receives data of the oscilloscope (40) and the master control system PLC simultaneously, and the oscilloscope (40) displays testing waveforms and testing data. The invention designs a specific test circuit and a test system structure, combines theories with practices, and mutually cooperates all devices of the whole semiconductor device test system to finish the test of the semiconductor device.
(2) The switch K2 and the switch K3 of the main circuit unit are switches for switching the first transistor or the second transistor of the tested piece to be connected into the test loop, and the second transistor of the tested piece is connected into the test loop when the switch K2 is closed and the switch K3 is opened; the switch K4, the switch K5, the switch K6 and the switch K7 are used for switching 4 groups of different inductance values; when the switch K8 or the switch K9 is closed, the test condition of the 1 st type short circuit is realized; when the switch K10 or the switch K11 is closed, the testing condition of the 2 nd type short circuit is realized by controlling the conducting signals of the thyristor Q2 and the thyristor Q3, so that the main circuit unit can realize the 1 st type short circuit test and the 2 nd type short circuit test.
(3) The resistor R1 and the switch K1 of the main circuit unit form a bleeder circuit, and after the circuit is powered off, the bleeder circuit is provided for the support capacitor C1; the supporting capacitor C1 is a supporting capacitor fixed by the laminated busbar, and a certain number of supporting capacitors are fixed by the laminated busbar, so that the stability of the bus voltage in the test process is ensured. The current limiting transistor Q1 is an IGBT for current limiting, a gate control signal of the current limiting transistor Q1 is given by a dsp chip, the driving voltage can be adjusted, and the functions of overcurrent detection and rapid turn-off can be achieved by setting a gate voltage value of the current limiting transistor Q1 and setting a saturation voltage drop detection value.
(4) In the existing IGBT dynamic testing device, a tested piece is required to be provided with a reverse diode, if the tested piece is not provided with the reverse diode, a testing platform cannot carry out testing, so that the main circuit unit of the device is provided with a diode D2, a diode D3, a switch K12 and a switch K13, and when the tested piece is not provided with the reverse diode, the switch K12 or the switch K13 is closed, so that the parallel connection of the diode D2 and the thyristor Q2 and the parallel connection of the diode D3 and the thyristor Q3 are realized. When the rear end of a supporting capacitor C1 in the circuit is in a non-test state, a current-limiting transistor Q1 is connected in series, the current-limiting transistor Q1 connected in series is kept in a turn-off state, namely, the bus voltage is disconnected with a rear-stage tested element, a grounding circuit is added in a circuit close to the tested element, and a main circuit positive line, a ground line and an inductance line are respectively connected with the ground through a switch K14, a switch K15 and a switch K16, so that reliable grounding is realized, no influence is caused on the personal safety of a user, and the circuit safety is ensured.
(5) The gate driving unit uses 2 transistors as circuit switches, at an initial moment, the transistor Q6 is turned on, the transistor Q7 is turned off, current flows through the inductor L5, the voltage provided by an external switching power supply is a constant value, and constant gate current can be obtained by controlling the on-time t of the transistor Q6, so that the requirement of constant gate current in the gate charge measurement process is met.
(7) Through first signal probe, second link, the second signal probe with test fixture (80) with be surveyed the piece and be connected, original screwed connection's mode has been replaced to the direct mode that links to each other of probe, convenient detection during the use uses, labour saving and time saving, convenient dismantlement moreover, and then has also improved work efficiency. In addition, the first power probe, the second power probe and the third power probe are connected with the laminated busbar connecting device (90), so that the tested piece is electrically connected with the test circuit, and the connection is convenient and detachable.
(8) In the test box body (50), the second cylinder jacks up the fixing device, a tested piece is reliably connected with the laminated busbar connecting device (90), the first cylinder extends to be matched with the limiting plate to fix the heating table, after the test is finished, the first cylinder contracts, the second cylinder descends, the position of the heating table descends, then the third cylinder works to clamp the guide sleeve fixing plate, the third cylinder continues to extend, two clamping rods are arranged on the pneumatic finger, the distance between the two clamping rods is matched with the guide sleeve fixing plate and used for driving the guide sleeve fixing plate to move, the guide sleeve fixing plate drives the guide pillar fixing plate to slide and push out the heating platform, the tested piece is conveniently taken out, the cylinders can achieve multi-directional movement of the tested piece, the movement precision is high, the fixing mode is reliable, and therefore stability and rapidness are achieved.
Drawings
Fig. 1 is a block diagram of a semiconductor device testing system according to embodiment 1 of the present invention;
fig. 2 is a schematic circuit diagram of a main circuit unit in a semiconductor device testing system according to embodiment 2 of the present invention;
fig. 3 is a schematic circuit diagram of a gate driving unit in a semiconductor device testing system according to embodiment 3 of the present invention;
fig. 4 is a timing chart illustrating control of a gate driving unit in the semiconductor device testing system according to embodiment 3 of the present invention;
fig. 5 is a schematic perspective view of a test fixture in a semiconductor device test system according to embodiment 4 of the present invention;
fig. 6 is a schematic plan view illustrating a connection between a device under test and a test fixture in the semiconductor device testing system according to embodiment 4 of the present invention;
fig. 7 is a first isometric view of an automated tooling in a semiconductor device testing system, as disclosed in embodiment 5 of the present invention;
fig. 8 is a schematic perspective view illustrating connection between a third cylinder and a pneumatic finger in the semiconductor device testing system according to embodiment 5 of the present invention.
Fig. 9 is a second side view of an automated tool in a semiconductor device testing system according to embodiment 5 of the present invention;
fig. 10 is a third side view of an automated tooling in a semiconductor device testing system according to embodiment 5 of the present invention;
fig. 11 is a schematic connection diagram of a linear slide rail and a guide pillar fixing plate in the semiconductor device testing system disclosed in embodiment 5 of the present invention;
FIG. 12 is an enlarged view of A in FIG. 10;
FIG. 13 is a schematic axial view of a test chamber in a semiconductor device testing system according to an embodiment of the present invention;
fig. 14 is a schematic view of a laminated busbar connection device in a semiconductor device testing system according to embodiment 5 of the present invention;
fig. 15 is a front view of a laminated busbar connection device in a semiconductor device testing system according to embodiment 5 of the present invention;
fig. 16 is a flowchart illustrating a testing method of the semiconductor device testing system according to embodiment 6 of the present invention.
Fig. 17 is a schematic perspective view of a portion of a laminated busbar connection device in a semiconductor device testing system according to embodiment 6 of the present invention.
In the figure: 1-epoxy board, 2-first signal probe, 3-first connection end, 301-first power probe, 302-second power probe, 303-third power probe, 4-second signal probe, 5-second connection end, 501-fourth power probe, 502-fifth power probe, 503-sixth power probe, 6-tested piece, 7-first connection point, 8-signal terminal, 9-second connection point, 10-third connection point; 11-shell, 1101-bottom plate, 1102-side plate, 1103-rear side plate, 12-heating table, 13-driving device, 1301-first cylinder, 1302-second cylinder, 1303-third cylinder, 1304-pneumatic finger, 14-guiding device, 1401-guide post, 1402-guide sleeve, 15-linear slide rail, 16-fixing device, 1601-guide sleeve fixing plate, 1602-guide post fixing plate, 17-heat insulation plate, 18-clamping rod, 19-rolling plate, 20-power input end, 21-first laminated bus bar, C1-supporting capacitor, Q1-current limiting transistor, 24-second laminated bus bar, 25-current sensor, 26-bus bar positive electrode layer, 27-inductance layer, 28-bus bar negative electrode layer, 30-upper computer, 40-oscilloscope, 50-test box, 60-alarm indicator lamp, 70-automatic tool, 80-test fixture and 90-laminated busbar connecting device.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1 and 13, a semiconductor device testing system includes an upper computer 30, an oscilloscope 40, a main control system PLC, a circuit control module, a testing box 50, a UPS power supply, a first optical fiber transceiver, a second optical fiber transceiver, a temperature regulator, an insulation detector, a leakage current detector, a high voltage power supply, an inductive load, a measurement unit, and an alarm indicator 60, where the circuit control module includes a main circuit unit, a gate driving unit, a pulse digital power amplification unit, a high voltage generation unit, and a current sampling unit, and the pulse digital power amplification unit, the high voltage generation unit, and the current sampling unit adopt the circuit structure of the prior art. An automatic tool 70 is arranged in the test box 50, as shown in fig. 6, a tested piece 6 is placed on the automatic tool 70, a test fixture 80 is arranged right above the tested piece 6, as shown in fig. 7, the automatic tool 70 comprises a driving device 13, the driving device 13 drives the automatic tool 70 to move so as to drive the tested piece 6 to be connected with the test fixture 80, and the master control system PLC is respectively connected with the test box 50, the test fixture 80, the main circuit unit and the gate drive unit; the upper computer 30 is connected with the oscilloscope 40, and the oscilloscope 40 is connected with the test box 50.
The upper computer 30 is a computer, the computer is provided with a USB interface, the computer is respectively connected with a display and a keyboard and a mouse, the oscilloscope 40 is a digital oscilloscope, the digital oscilloscope is connected with a first optical fiber transceiver through Ethernet, the computer is connected with the first optical fiber transceiver through Ethernet, the first optical fiber transceiver is connected with a second optical fiber transceiver through optical fibers, the second optical fiber transceiver is respectively connected with a main control system PLC, a temperature regulator, an insulation detector, a leakage current detector, a gate drive unit and a high-voltage power supply through Ethernet, the high-voltage power supply is connected with the main circuit unit, and an inductive load is respectively connected with the main circuit unit and the main control system PLC;
the measuring unit is respectively connected with the master control system PLC and the test box 50; the oscilloscope 40 is connected with the test box 50 through a measuring unit; the main control system PLC comprises a test fixture signal control interface and a panel key state monitoring unit, the main control system PLC is connected with the test fixture 80 through the test fixture signal control interface, and the panel key state monitoring unit is used for monitoring the panel key state; the master control system PLC is connected with the alarm indicator lamp 60; the UPS is respectively connected with the computer, the first optical fiber transceiver, the second optical fiber transceiver, the digital oscilloscope, the master control system PLC, the temperature regulator, the insulation detector, the leakage current detector, the gate pole driving unit and the high-voltage power supply.
The working principle of the embodiment 1 of the invention is as follows: a user sets test conditions and edits test results through a computer interface, communicates with the oscilloscope 40, the master control system PLC, the temperature controller, the insulation detector, the leakage current detector, the high-voltage power supply and the gate drive unit through the Ethernet, and sends and acquires data of the equipment; the oscilloscope 40 is used for acquiring a test waveform and test data; the UPS is used for realizing the function of storing test data when power failure occurs; 2 optical fiber transceivers are used for carrying out optical fiber isolation on a computer, an oscilloscope 40 and an electric execution unit, and meanwhile, data communication is realized by utilizing an Ethernet; the master control system PLC receives the instruction of the computer, detects the panel switch state, controls the contactor in the main circuit unit, and controls the alarm indicator lamp 60 and the clamp control signal; the gate driving unit is controlled by the DSP chip and is used for controlling a driving signal of the tested piece 6 and a control signal in the main circuit unit and providing a constant current source for the tested piece 6; the main circuit unit provides voltage and current required by the test for the tested piece 6; the insulation detector and the leakage current detector are used for detecting insulation voltage and leakage current within a safety range which can be touched by a human body, so that the personal safety of a user is protected; the test box 50 is an area where the tested piece 6 is tested; the heating table is arranged in the test box body 50, and the tested piece 6 is placed on the heating table, so that the temperature of the tested piece 6 can be adjusted; the test fixture 80 is arranged in the test box body 50, the test fixture 80 is connected with the port in the test box body 50 through a probe, fast replacement is supported, and the electrical connection between the test circuit and the IGBT is realized through the connection between the probe and the terminal of the tested piece 6.
Through the technical scheme, in the semiconductor device testing system provided by embodiment 1 of the invention, the automatic tool 70 is arranged in the testing box 50, the driving device 13 drives the automatic tool 70 to move so as to drive the tested piece to be connected with the testing clamp 80, the main circuit unit provides voltage and current required by testing for the tested piece 6 so as to complete testing, the upper computer 30 sets testing conditions, edits testing results, sends data to the oscilloscope 40 and the master control system PLC and simultaneously receives data of the oscilloscope 40 and the master control system PLC, and the oscilloscope 40 displays testing waveforms and testing data. The specific test circuit and test system structure is designed, theory is combined with practice, and all devices of the whole semiconductor device test system are matched with each other to complete the test of the semiconductor device. It should be noted that, the UPS power supply, the first optical fiber transceiver, the second optical fiber transceiver, the temperature regulator, the insulation detector, the leakage current detector, the high voltage power supply, the inductive load, the measurement unit, and the like, which are not shown in fig. 13, are all disposed in the test box 50, the structural schematic diagram cannot show the position relationship one by one, and the position relationship is not fixed in the system, and may be at any position, so the connection relationship of each device is shown by using the block diagram shown in fig. 1, and those skilled in the art can optionally arrange the position of each device according to the connection relationship.
Example 2
Embodiment 2 of the present invention is different from embodiment 1 in that a specific embodiment of the main circuit unit is provided, and the detailed description is made below.
As shown in fig. 2, the main circuit unit includes a high voltage power supply, switches K2 to K11 numbered in sequence, a thyristor Q2, a thyristor Q3, an inductor L1, an inductor L2, an inductor L3, an inductor L4, an anti-reverse diode D1, a resistor R1, a switch K1, a supporting capacitor C1, a current-limiting transistor Q1, a diode D2, a diode D3, a switch K12, a switch K13, a current sensor CT1, a current sensor CT2, a switch K14, a switch K15, and a switch K16, and the device under test 6 includes a first transistor Q4 and a second transistor Q5.
The positive pole of the anti-reverse diode D1 connects the positive pole of the high voltage power supply, one end of the resistor R1 connects the negative pole of the anti-reverse diode D1, the other end of the resistor R1 connects one end of the switch K1, the other end of the switch K1 connects the negative pole of the high voltage power supply, one end of the supporting capacitor C1 connects one end of the resistor R1, and the other end of the supporting capacitor C1 connects the other end of the switch K1. The drain of the current-limiting transistor Q1 is connected to one end of the supporting capacitor C1, and the source of the current-limiting transistor Q1 is connected to one end of the switch K2.
The other end of the switch K2 is connected with one end of the switch K3, the other end of the switch K3 is connected with the negative electrode of the high-voltage power supply, and one end of the inductor L1, one end of the inductor L2, one end of the inductor L3 and one end of the inductor L4 are connected together and connected with the other end of the switch K2;
the other end of the inductor L1 is connected with one end of the switch K4, the other end of the inductor L2 is connected with one end of the switch K5, the other end of the inductor L3 is connected with one end of the switch K6, the other end of the inductor L4 is connected with one end of the switch K7, and the other end of the switch K4, the other end of the switch K5, the other end of the switch K6 and the other end of the switch K7 are connected together and connected to one end of the switch K8; one end of the switch K8 is connected with one end of the switch K9, the other end of the switch K8 is connected with one end of the switch K10, the other end of the switch K9 is connected with the first end of the thyristor Q3, the second end of the thyristor Q3 is connected with the first end of the thyristor Q2 through the switch K11, and the second end of the thyristor Q2 is connected with the other end of the switch K10; one end of the switch K10 is connected to the drain of the first transistor Q4, the source of the first transistor Q4 is connected to the drain of the second transistor Q5, and the source of the second transistor Q5 is connected to the first end of the thyristor Q3.
One end of the switch K12 is connected with one end of the switch K10, the other end of the switch K12 is connected with the cathode of the diode D2, the anode of the diode D2 is connected with the cathode of the diode D3 through the switch K14, and the anode of the diode D3 is connected with the first end of the thyristor Q3.
The current sensor CT1 is connected between the switch K12 and the first transistor Q4, and the current sensor CT2 is connected between the anode of the diode D3 and the second transistor Q5. The current sensor CT1 and the current sensor CT2 are disposed at the positive pole and the negative pole of the main circuit, respectively, and detect the current of the piece 6 to be tested.
One end of the switch K14 is connected to the source of the current-limiting transistor Q1, one end of the switch K15 is connected to a connection line between the other end of the supporting capacitor C1 and the other end of the switch K9, one end of the switch K16 is connected to a connection line between the switch K5 and the switch K6, one end of the switch K8 is connected to the first end of the thyristor Q2, the first end of the thyristor Q2 is connected to the anode of the diode D2, and the anode of the diode D2 is connected to the source of the transistor Q4; the other end of the switch K14, the other end of the switch K15, and the other end of the switch K16 are all grounded.
The working principle and the working process of the embodiment 2 of the invention are as follows: the high-voltage power supply provides a stable working power supply for the whole circuit, the anti-reverse diode D1 prevents current from flowing backwards in the test process to damage the high-voltage power supply, the resistor R1 and the switch K1 form a discharge circuit, and after the circuit is powered off, a discharge loop is provided for the support capacitor C1; the supporting capacitor C1 is a capacitor bank fixed by the laminated busbar, and a certain number of supporting capacitors are fixed by the laminated busbar, so that the stability of the bus voltage in the test process is ensured. The current-limiting transistor Q1 is an IGBT for limiting current, a gate control signal of the current-limiting transistor is given by a dsp chip, and a driving voltage can be adjusted, and by setting a gate voltage value and setting a saturation voltage drop detection value, overcurrent detection and rapid turn-off can be achieved.
The switch K2 and the switch K3 are switches for switching the first transistor or the second transistor of the device under test 6 to be connected to the test loop, for example, when K2 is closed and K3 is opened, the second transistor of the device under test DUT is connected to the test loop, for example, when K2 is opened and K3 is closed, the first transistor of the device under test DUT is connected to the test loop; the switch K4, the switch K5, the switch K6 and the switch K7 are used for switching 4 groups of different inductance values, namely switching of an inductor L1, an inductor L2, an inductor L3 and an inductor L4, and in practical application, the switching of more than 4 groups of inductors can be realized; the switch K8 and the switch K9 are switches for the class 1 short circuit test, and when the switch K8 or the switch K9 is closed, the test condition for the class 1 short circuit is realized; the switch K10 and the switch K11 are change-over switches for the type 2 short circuit test, when the switch K10 or the switch K11 is closed, the test condition of the type 2 short circuit is realized by controlling the conduction signals of the thyristor Q2 and the thyristor Q3, and the whole circuit can realize the type 1 short circuit test and the type 2 short circuit test.
Since the existing IGBT dynamic test device requires the device under test 6 to have a nand diode, and if the device under test 6 is not provided with a nand diode, the test platform cannot perform the test, the present application provides the diode D2, the diode D3, the switch K12, and the switch K13, and when the device under test 6 is not provided with a nand diode, the switch K12 or the switch K13 is closed, so as to implement the parallel connection of the diode D2 and the thyristor Q2 and the parallel connection of the diode D3 and the thyristor Q3. The current sensor CT1 and the current sensor CT2 are disposed at the positive pole and the negative pole of the main circuit, respectively, and detect the current of the piece 6 to be tested.
Finally, in order to ensure the safety of the circuit, a grounding circuit is added in the circuit close to the tested piece 6, and the main loop positive line, the ground line and the inductance line are respectively connected with the ground through a switch K14, a switch K15 and a switch K16 to realize reliable grounding, so that although the supporting capacitor C1 is electrified, the personal safety of an actual user cannot be affected.
Through the technical scheme, the main circuit unit provided by the embodiment 2 of the invention has the advantage of capability of carrying out type 2 short circuit test, and meanwhile, a bleeder circuit is formed by the resistor R1 and the switch K1, and after the circuit is powered off, a bleeder circuit is provided for the support capacitor C1; the supporting capacitor C1 is a supporting capacitor which fixes a certain number through the laminated busbar, and the stability of the bus voltage in the test process is ensured. Current limiting is effected by current limiting transistor Q1. The diode D2, the diode D3, the switch K12 and the switch K13 are arranged, when the tested piece 6 is a diode without a reverse diode, the switch K12 or the switch K13 is closed, and the parallel connection of the diode D2 and the thyristor Q2 and the parallel connection of the diode D3 and the thyristor Q3 are realized. The whole circuit realizes reliable grounding and ensures safety.
Example 3
As shown in fig. 3, embodiment 3 of the present invention is different from embodiment 1 in that a specific implementation of the gate driving unit is provided, and the following detailed description is provided.
The gate driving unit comprises a switching power supply, a transistor Q6, a transistor Q7, a diode D4, an inductor L5, a resistor R2, a resistor R3, a first driving module DRIVE-1 and a second driving module DRIVE-2, wherein the switching power supply is respectively connected with the cathode of the diode D4 and the source of the transistor Q6, and the anode of the diode D4 is connected with the drain of the transistor Q6; the dotted terminal of the inductor L5 is connected to the cathode of the diode D4, and the unlike terminal of the inductor L5 is connected to the anode of the diode D4; the drain of the transistor Q7 is connected with the synonym terminal of the inductor L5, the source of the transistor Q7 is connected with the device under test 6, and the sources of the device under test 6 and the transistor Q6 are both grounded;
the first driving module DRIVE-1 is connected with a resistor R2 in parallel, one end of the resistor R2 is connected with the grid electrode of a transistor Q6, and the other end of the resistor R2 is connected with the source electrode of a transistor Q6; the second driving module DRIVE-2 is connected in parallel with a resistor R3, one end of the resistor R3 is connected with the gate of the transistor Q7, and the other end of the resistor R3 is connected with the source of the transistor Q7.
The working principle and the working process of the embodiment 3 of the invention are as follows: as shown in fig. 3, 2 MOS transistors are used as circuit switches, at an initial time, Q6 is turned on, Q7 is turned off, a current flows through an inductor L5, a voltage U provided by an external switching power supply is a constant value, and the constant value is obtained according to a formula
Figure BDA0002283315040000221
By controlling the on-time t of the transistor Q6, a specified current value I can be obtainedGWhen the transistor Q6 is turned off, the current in the inductor L5 freewheels through the diode D4, when the transistor Q7 is turned on, the current direction in the inductor L5 changes to supply a constant current to the device under test 6, and when charging is completed, the transistor Q7 is turned off, and the current freewheels through the diode D4, so that energy is depleted. As shown in FIG. 4, to realize the test under the condition that the collector voltage and current are non-zero, the driving signal in the T1 stage is provided by the voltage type driving in the prior art, the driving signal in the T2 stage is provided by the constant current generated by the gate driving unit in the embodiment 3 of the invention, and the 2 nd pulse initial time of the double pulse is used as the release IGThe current time point meets the requirements of testing the collector voltage and the current under the condition of non-zero value. Wherein, IGIs the gate current, VCEIs the voltage between collector and emitter, VGEVoltage between gate and emitter, ICIs the collector current.
It should be noted that embodiment 3 of the present invention protects the main architecture of the gate driver unit capable of providing a constant gate current, and any power supply and driver that can be implemented by the prior art can be used for the switching power supply, the first driver module DRIVE-1 and the second driver module DRIVE-2, so the specific circuits of the switching power supply, the first driver module DRIVE-1 and the second driver module DRIVE-2 are not within the scope of the present application, and the circuit structure thereof is not described.
Example 4
The difference between embodiment 4 and embodiment 2 of the present invention is to provide a specific embodiment of the test fixture 80, which is described in detail below.
Referring to fig. 5, fig. 5 is a perspective view of a test fixture; in embodiment 4 of the present invention, the test fixture 80 includes an epoxy board 1, a first signal probe 2, a first connection end 3, a second signal probe 4, and a second connection end 5, the first connection end 3 is disposed on one side of the epoxy board 1, the top of the epoxy board 1 near the first connection end 3 is connected to the first signal probe 2 through a connection pillar, the second signal probe 4 is further disposed on the bottom of the epoxy board 1, and the second connection end 5 is disposed on one side of the second signal probe 4 on the bottom of the epoxy board 1.
Through first signal probe 2, second signal probe 4 and second link 5 with surveyed the piece and link to each other, labour saving and time saving, and dismantle the convenience, can quick replacement.
Preferably, the connecting column is welded to the top of the epoxy plate 1, the first signal probe 2 is welded to the top of the connecting column, and the connecting column is made of the same material as the epoxy plate 1; wherein the first signal probe 2 is used for low voltage signal detection.
Further, the first connection end 3 includes a first power probe 301, a second power probe 302, and a third power probe 303, the first power probe 301, the second power probe 302, and the third power probe 303 are sequentially welded to the side surface of the epoxy board 1 from top to bottom, the number of the first power probe 301, the second power probe 302, and the third power probe 303 is several, the plurality of first power probes 301, the second power probe 302, and the third power probe 303 are used to connect with the laminated busbar connection device 90 to form a power loop, and the laminated busbar connection device 90 is disposed at the rear side of the test box 50.
The first power probe 301 is a bus anode, the second power probe 302 is an inductance layer 27, and the third power probe 303 is a bus cathode, and is used for being connected with the laminated busbar connection device 90, so that the detection of the tested piece can be realized.
Preferably, in this embodiment, the number of the first power probes 301 is six, the number of the second power probes 302 is six, and the number of the third power probes 303 is six.
Further, the second signal probes 4 are used for connecting control signal probes of the tested piece, the number of the second signal probes 4 is several, and seven are preferred in this embodiment.
Further, the second connection terminal 5 includes a plurality of fourth power probes 501 for connecting to probes of the IGBT power signal to be tested, and the second connection terminal 5 is welded to the bottom of the epoxy board 1.
To explain the embodiment 4 in more detail, referring to fig. 6, fig. 6 is a schematic plan view of the connection between the tested piece and the test fixture; taking an econdual 3 tested piece 6 of english flying as an example, the tested piece 6 comprises a plurality of first connection points 7 and signal terminals 8, a second connection point 9 and a third connection point 10 are arranged on the signal terminals 8, a first signal probe 2 and the third connection point 10 of a test fixture 80 are connected, a second connection point 5 and the second connection point 9 are connected, and a second signal probe 4 is connected with the first connection point 7 of the tested piece in fig. 6; thereby completing the connection of the tested piece 6 and the test fixture 80, thereby improving the detection efficiency.
The working principle of the embodiment 4 of the invention is as follows: the important role of the test fixture 80 is to configure a probe and support rapid replacement, the first power probe 301 is a bus positive electrode, the second power probe 302 is an inductance layer 27, the third power probe 303 is a bus negative electrode, and is connected with the laminated busbar connection device 90 through the first power probe 301, the second power probe 302 and the third power probe 303, that is, the probe is connected with an IGBT terminal to realize the electrical connection between the test circuit and the IGBT, the first signal probe 2 and the third connection point 10 of the test fixture 80 are connected with the second connection point 5 and the second connection point 9, and the second signal probe 4 is connected with the first connection point 7 of the tested piece in fig. 6; thereby accomplish being surveyed and linking to each other of piece 6 and test fixture 80, conveniently detect the use to realize the detection to being surveyed, labour saving and time saving, convenient the dismantlement moreover.
Example 5
The difference between example 5 and example 4 of the present invention is that a specific embodiment of the test chamber 50 is provided, and the following detailed description is provided.
Referring to fig. 7, 9, 10 and 13, fig. 7 is a first axial view of an automated tooling assembly 70 according to embodiment 5 of the present invention; FIG. 9 is a second side view of an automated tooling assembly 70 according to embodiment 5 of the present invention; FIG. 10 is a third isometric view of an automated tooling 70 of embodiment 5 of the present invention; fig. 13 is an axial side schematic view of the test cassette 50.
An automatic tool 70 is arranged in the lower right of the test box body 50, a laminated busbar connecting device 90 is arranged on the rear side of the test box body, the laminated busbar connecting device 90 is connected with a semiconductor device test fixture 80, the semiconductor device test fixture 80 is arranged at the top of the automatic tool 70, the semiconductor device test fixture 80 is connected with a tested piece 6, and the tested piece 6 is placed in the automatic tool 70; wherein the content of the first and second substances,
the automatic tool 70 comprises a housing 11, a heating table 12 for placing the tested piece 6, a driving device 13, a guiding device 14, a linear slide rail 15 and a fixing device 16, wherein,
the top of casing 11 is provided with test fixture 80, test fixture 80 passes through the inner wall fixed connection of bolt and test box 50, the inboard bolt fastening of casing 11 is provided with linear slide rail 15, linear slide rail 15 and fixing device 16's both sides outer wall sliding connection, the last guider 14 that is provided with a plurality of and is used for the accurate installation location of fixing device 16, fixing device 16's top surface is the fixed warm table 12 that is provided with still, warm table 12 matches with drive arrangement 13 and is incorporated by drive arrangement 13 drive motion, drive arrangement 13 and casing 11 fixed connection.
Preferably, in this embodiment, the linear sliding rail 15 is in a shape like a Chinese character 'ao', two symmetrical transverse portions of the linear sliding rail 15 are in an arc shape and are provided with a plurality of balls, the 'arc shape' can be matched with and place the balls and prevent the balls from falling off, a bolt on the outer side wall of the fixing device 16 is provided with a rolling plate 19 which is matched with the linear sliding rail 15 and is in rolling connection, the rolling plate 19 is in a shape like a Chinese character 'ao', and the transverse portion of the rolling plate 19 is also in an arc shape, so that the rolling plate can better match with the balls for rolling.
The positioning is carried out through the guide device 14, the fixing device 16 is convenient to install, the fixing device 16 is driven to slide and limit under the driving of the driving device 13, multi-directional movement is realized, the movement precision is high, the fixing mode is reliable, and therefore stability and rapidness are realized.
Further, in this embodiment, the housing 11 includes a bottom plate 1101, a pair of side plates 1102, and a rear side plate 1103, the top of the bottom plate 1101 is provided with the side plates 1102 along two symmetrical bolt fastening on the long side, the top of the bottom plate 1101 is also provided with the rear side plate 1103 in a bolt fastening manner, and two ends of the rear side plate 1103 are respectively attached to the two side plates 1102 and are connected into an integral structure through bolts, so that the housing is convenient to detach when not in use.
Preferably, in this embodiment, the bottom plate 1101, the side plate 1102 and the rear side plate 1103 are all made of 6061 alloy material, and have the advantages of light weight, high strength, easy processing and the like.
Further, as shown in fig. 12, fig. 12 is an enlarged schematic view of a in fig. 10; the bottom of warm table 12 is passed through heat insulating board 17 and is fixed continuous with fixing device 16, the bottom of warm table 12 is provided with the heat insulating board 17 of laminating mutually, heat insulating board 17 and fixing device 16's top fixed connection, just the warm hole has been seted up to the side that warm table 12 is close to posterior lateral plate 1103, and the warm hole is used for placing the heating rod, will be surveyed a 6 and place on warm table 12 for carry out the dynamic and static test.
The heating table 12 can be used for fixing the tested piece 6 by bolts, and the tested piece 6 can also be prevented from sliding due to inertia when the heating table 12 moves by arranging a plurality of screws and the like on the heating table 12 for limiting; or a block-up block is fixedly arranged on the heating table 12 through bolts, and a screw is arranged on the block-up block and used for limiting the tested piece 6, so that the tested piece 6 is better protected in the moving process.
Preferably, in this embodiment, the heat insulation board 17 is bolted to the top of the fixing device 16, the heating platform 12 is bolted to the heat insulation board 17, the length of the heating hole can be set according to actual working requirements, and the heating rod is connected to an external power supply (not shown in the figure) through a wire, so as to heat the heating platform.
The driving device 13 comprises a first cylinder 1301, a second cylinder 1302, a third cylinder 1303, a pneumatic finger 1304, the first cylinder 1301 is fixedly bolted to the top of the bottom plate 1101 at a side away from the rear side plate 1103, the first cylinder 1301 can be extended and shortened to be clamped with the fixing device 16 so as to limit the sliding of the fixing device 16, the second cylinder 1302 is disposed between the rear plate 1103 and the first cylinder 1301, and is fixedly connected with the bolt of the bottom plate 1101, the second air cylinder 1302 works to drive the fixing device 16 to move up and down along the guide device 14, the end of the fixture 16 near the rear plate 1103 is also connected to a pneumatic finger 1304, the pneumatic finger 1304 is fixedly arranged at the telescopic end of a third cylinder 1303, the third cylinder 1303 is connected with a rear side plate 1103 through a bolt, and the telescopic end of the third cylinder 1303 penetrates through the rear plate 1103 to perform telescopic motion, and is matched with the pneumatic finger 1304 to drive the fixing device 16 to perform horizontal reciprocating motion.
Further, as shown in fig. 8, fig. 8 is a schematic perspective view illustrating the connection between the third cylinder 1303 and the pneumatic finger 1304 in the present invention; the pneumatic finger 1304 is provided with two clamping bars 18 at an end thereof adjacent to the fixture 16, and the distance between the two clamping bars 18 and the fixture 16 is matched for clamping the fixture 16.
Preferably, in this embodiment, the first cylinder 1301, the second cylinder 1302, and the third cylinder 1303 are all electrically connected to a main control system PLC.
The guiding device 14 comprises a guide pillar 1401 and a guide sleeve 1402, the guide pillar 1401 penetrates through the guide sleeve 1402, and both the guide pillar 1401 and the guide sleeve 1402 are connected with the fixing device 16.
The linear sliding rail 15 is fixedly connected with the inner wall bolt of the side plate 1102 and is used for matching with the fixing device 16 to slide.
The fixing device 16 comprises a guide sleeve fixing plate 1601 and guide post fixing plates 1602, the number of the guide sleeve fixing plates 1602 is two, the guide post fixing plates 1602 are L-shaped, the transverse parts of the guide post fixing plates 1602 are used for being connected with the guide sleeve fixing plates 1601 and supporting the guide sleeve fixing plates 1601, the longitudinal parts of the guide post fixing plates 1602 close to the side wall surfaces of the side plates 1102 are in sliding connection with the linear slide rails 15, a limiting plate is further arranged between the two guide post fixing plates 1602, two ends of the limiting plate are respectively in bolted connection with the guide post fixing plates 1602, a cavity matched with the telescopic end position and size of the first air cylinder 1301 is formed in the limiting plate, the first air cylinder 1301 stretches and penetrates through the cavity to realize clamping limiting with the limiting; blind holes are formed in four corners of the guide pillar fixing plate 1602, through holes coinciding with the blind holes are formed in four corners of the guide sleeve fixing plate 1601, and the guide sleeve fixing plate 1601 is fixedly connected with the guide sleeve 1402 through bolts; the guide pillar 1401 extends through the through hole and into the blind hole to connect with the fixture 16.
As shown in fig. 14, 15 and 17, fig. 14 is a schematic view of a laminated busbar connection device, and fig. 15 is a front view of the laminated busbar connection device according to embodiment 5 of the present invention. And described in the perspective of fig. 14, the laminated busbar connection device 90 is fixedly installed at the rear side of the test box 50 by bolts, wherein, the laminated busbar connection device 90 comprises a power input end 20, a first laminated busbar 21, a supporting capacitor C1, a current limiting transistor Q1, a second laminated busbar 24 and a current sensor 25, a supporting capacitor C1 is fixedly arranged on a rear bolt of the first laminated busbar 21, a current-limiting transistor Q1 is arranged at the bottom of the first laminated busbar 21, the lower end of the current limiting transistor Q1 is also provided with a second laminated busbar 24, the right side of the second laminated busbar 24 is provided with a current sensor 25, the current sensor 25 comprises a block current sensor CT1 and a current sensor CT2, the left side of the lower end of the second laminated busbar 24 sequentially comprises a bus positive electrode layer 26, an inductance layer 27 and a bus negative electrode layer 28 from top to bottom; the bus positive electrode layer 26, the inductance layer 27 and the bus negative electrode layer 28 are sequentially connected with the first power probe 301, the second power probe 302 and the third power probe 303. It should be noted that the current sensor CT1, the current sensor CT2, the supporting capacitor C1, the current limiting transistor Q1, and the like in the main circuit unit are all part of the laminated busbar connection device 90, each device in the main circuit unit and the gate driving unit is distributed in the testing box 50, and are communicated with each other to provide test conditions for the tested piece 6, the connecting nodes are connected with each power probe and each signal probe through leads, the signal and the power signal in the main circuit unit and the gate pole driving unit are led out and connected to the tested piece 6 in a probe mode to complete the test, the present invention does not show which connection node of the main circuit unit and the gate drive unit the respective power probes and signal probes correspond to, according to different test items and with adjustment, a person in the field can connect probes for testing through leads at any node of the main circuit unit and the gate drive unit according to needs.
The laminated busbar connecting device 90 comprises two independent laminated busbars, a supporting capacitor is arranged on the first laminated busbar, a sensor is arranged at the joint of the first laminated busbar and the second laminated busbar, and the second laminated busbar is used as an output terminal to form three power layers, so that a loop between a positive line and a negative line is reduced to the maximum extent, and stray inductance is effectively reduced.
The working principle of the embodiment 5 of the invention is as follows: when the device is used specifically, the test fixture 80 is connected with the laminated busbar connecting device 90, then the tested piece 6 is placed on the heating table 12 for action static test, the second cylinder 1302 jacks up the fixing device 16, the tested piece 6 is reliably connected with each circuit, meanwhile, the first cylinder 1301 extends to be matched with the limiting plate to fix the heating table 12, after the test is finished, the first cylinder 1301 contracts, the second cylinder 1302 descends, the heating table descends, then the third cylinder 1303 works to enable 1304 to clamp the guide sleeve fixing plate 1601, then the third cylinder 1303 continues to extend, two clamping rods 18 are arranged on the pneumatic finger 1304, the distance between the two clamping rods 18 is matched with the guide sleeve fixing plate 1601 and used for driving the guide sleeve fixing plate 1601 to move, the guide sleeve fixing plate 1601 drives the guide sleeve fixing plate 1602 to slide to push out the heating platform, the tested piece is convenient to take out, and multidirectional movement is realized, the motion precision is high, and the fixed mode is reliable to realize stably and swiftly, and remove the back and surveyed piece 6 and can pass through the probe with the test fixture 80 of top and link to each other, connect convenient and reliable.
Example 6
Embodiment 6 of the present invention is different from embodiment 1 in that, based on the semiconductor device test system provided in embodiment 1, embodiment 6 of the present invention provides a test method of the system, and the following detailed description is provided.
As shown in fig. 16, the test method includes:
step S1: inputting an instruction through the upper computer 30, opening the test box 50, and placing the tested piece 6 on the automatic tool 70;
step S2: the test box body 50 is closed by inputting an instruction through the upper computer 30, and the automatic tool 70 moves upwards by operating keys on a panel of the upper computer 30, and at the moment, the tested piece 6 is connected with the test fixture 80;
step S3: operating the upper computer 30, selecting a test item on a panel of the upper computer 30, clicking to start testing, and operating by the master control system PLC according to an instruction of the upper computer 30;
step S4: after the test is completed, the data of the oscilloscope 40 is automatically transmitted to the upper computer 30, and the user obtains the test data through the upper computer 30.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (18)

1. A semiconductor device testing system is characterized by comprising an upper computer (30), an oscilloscope (40), a master control system PLC, a circuit control module and a testing box body (50), wherein an automatic tool (70) is arranged in the testing box body (50), a tested piece (6) is placed on the automatic tool (70), a testing clamp (80) is arranged right above the tested piece (6), the automatic tool (70) comprises a driving device (13), the driving device (13) drives the automatic tool (70) to move so as to drive the tested piece (6) to be connected with the testing clamp (80), and the master control system PLC is respectively connected with the testing box body (50), the testing clamp (80) and the circuit control module; the upper computer (30) is connected with the oscilloscope (40), and the oscilloscope (40) is connected with the test box body (50).
2. The semiconductor device testing system of claim 1, further comprising a UPS power supply, a first fiber optic transceiver, a second fiber optic transceiver, a temperature regulator, an insulation detector, a leakage current detector, a high voltage power supply, an inductive load, a measurement unit, and an alarm indicator (60), wherein the circuit control module comprises a main circuit unit, a gate driving unit, a pulse digital power amplification unit, a high voltage generation unit, and a current sampling unit, the oscilloscope (40) is connected to the first fiber optic transceiver through an ethernet, the upper computer (30) is connected to the first fiber optic transceiver through an ethernet, the first fiber optic transceiver is connected to the second fiber optic transceiver through an optical fiber, and the second fiber optic transceiver is respectively connected to the main control system PLC, the temperature regulator, the insulation detector, the leakage current detector, the measurement unit, and the alarm indicator (60) through an ethernet, The gate pole driving unit is connected with a high-voltage power supply, the high-voltage power supply is connected with the main circuit unit, and the inductive load is respectively connected with the main circuit unit and the master control system PLC;
the measuring unit is respectively connected with the master control system PLC and the test box body (50); the oscilloscope (40) is connected with the test box body (50) through the measuring unit; the main control system PLC comprises a test fixture signal control interface and a panel key state monitoring unit, the main control system PLC is connected with a test fixture (80) through the test fixture signal control interface, and the panel key state monitoring unit is used for monitoring the panel key state; the master control system PLC is connected with an alarm indicator lamp (60); the UPS power supply is respectively connected with the upper computer, the first optical fiber transceiver, the second optical fiber transceiver, the oscilloscope, the master control system PLC, the temperature regulator, the insulation detector, the leakage current detector, the gate pole driving unit and the high-voltage power supply.
3. A semiconductor device testing system according to claim 2, wherein the main circuit unit comprises switches K2 to K11, an anti-reverse diode D1, a resistor R1, a switch K1, a supporting capacitor C1, a current-limiting transistor Q1, a thyristor Q2 and a thyristor Q3 which are numbered sequentially, the inductive load comprises an inductor L1, an inductor L2, an inductor L3 and an inductor L4, the device under test (6) comprises a first transistor Q4 and a second transistor Q5, the anode of the anti-reverse diode D1 is connected to the anode of the high-voltage power supply, one end of the resistor R1 is connected to the cathode of the anti-reverse diode D1, the other end of the resistor R1 is connected to one end of the switch K1, the other end of the switch K1 is connected to the cathode of the high-voltage power supply, one end of the supporting capacitor C1 is connected to one end of the resistor R1, and the other end of the other switch K1 of the supporting capacitor C1 is connected to the other end; the drain of the current-limiting transistor Q1 is connected with one end of the supporting capacitor C1, and the source of the current-limiting transistor Q1 is connected with one end of the switch K2; the other end of the switch K2 is connected with one end of the switch K3, the other end of the switch K3 is connected with the negative electrode of the high-voltage power supply, and one end of the inductor L1, one end of the inductor L2, one end of the inductor L3 and one end of the inductor L4 are connected together and connected with the other end of the switch K2;
the other end of the inductor L1 is connected with one end of the switch K4, the other end of the inductor L2 is connected with one end of the switch K5, the other end of the inductor L3 is connected with one end of the switch K6, the other end of the inductor L4 is connected with one end of the switch K7, and the other end of the switch K4, the other end of the switch K5, the other end of the switch K6 and the other end of the switch K7 are connected together and connected to one end of the switch K8; one end of the switch K8 is connected with one end of the switch K9, the other end of the switch K8 is connected with one end of the switch K10, the other end of the switch K9 is connected with the first end of the thyristor Q3, the second end of the thyristor Q3 is connected with the first end of the thyristor Q2 through the switch K11, and the second end of the thyristor Q2 is connected with the other end of the switch K10; one end of the switch K10 is connected to the drain of the first transistor Q4, the source of the first transistor Q4 is connected to the drain of the second transistor Q5, and the source of the second transistor Q5 is connected to the first end of the thyristor Q3.
4. The semiconductor device testing system of claim 3, wherein the main circuit unit further comprises a diode D2, a diode D3, a switch K12 and a switch K13, one end of the switch K12 is connected to one end of the switch K10, the other end of the switch K12 is connected to the cathode of the diode D2, the anode of the diode D2 is connected to the cathode of the diode D3 through a switch K14, and the anode of the diode D3 is connected to the first end of the thyristor Q3.
5. The semiconductor device test system as claimed in claim 4, wherein the main circuit unit further comprises a current sensor CT1 and a current sensor CT2, the current sensor CT1 is connected between the switch K12 and a first transistor Q4, and the current sensor CT2 is connected between the anode of the diode D3 and a second transistor Q5.
6. The semiconductor device testing system of claim 5, wherein the main circuit unit further comprises a switch K14, a switch K15 and a switch K16, wherein one end of the switch K14 is connected to the source of the current-limiting transistor Q1, one end of the switch K15 is connected to a connection line between the other end of the supporting capacitor C1 and the other end of the switch K9, one end of the switch K16 is connected to a connection line between the switch K5 and the switch K6, one end of the switch K8 is connected to a first end of a thyristor Q2, a first end of the thyristor Q2 is connected to the positive electrode of the diode D2, and the positive electrode of the diode D2 is connected to the source of the transistor Q4; the other end of the switch K14, the other end of the switch K15, and the other end of the switch K16 are all grounded.
7. The semiconductor device testing system of claim 2, wherein the gate driving unit comprises a switching power supply, a transistor Q6, a transistor Q7, a diode D4, an inductor L5, a resistor R2, a resistor R3, a first driving module DRIVE-1 and a second driving module DRIVE-2, the switching power supply is respectively connected to the cathode of the diode D4 and the source of the transistor Q6, and the anode of the diode D4 is connected to the drain of the transistor Q6; the dotted terminal of the inductor L5 is connected to the cathode of the diode D4, and the unlike terminal of the inductor L5 is connected to the anode of the diode D4; the drain electrode of the transistor Q7 is connected with the synonym terminal of the inductor L5, the source electrode of the transistor Q7 is connected with a tested device (6), and the source electrodes of the tested device (6) and the transistor Q6 are both grounded;
the first driving module DRIVE-1 is connected with a resistor R2 in parallel, one end of the resistor R2 is connected with the grid electrode of a transistor Q6, and the other end of the resistor R2 is connected with the source electrode of a transistor Q6; the second driving module DRIVE-2 is connected in parallel with a resistor R3, one end of the resistor R3 is connected with the gate of the transistor Q7, and the other end of the resistor R3 is connected with the source of the transistor Q7.
8. The semiconductor device testing system according to claim 1, wherein the testing fixture (80) comprises an epoxy board (1), a first signal probe (2), a first connecting end (3), a second signal probe (4) and a second connecting end (5), the first connecting end (3) is arranged on one side of the epoxy board (1), the top of the epoxy board (1) close to the first connecting end (3) is connected with the first signal probe (2) through a connecting column, the bottom of the epoxy board (1) is further provided with a plurality of second signal probes (4), and the bottom of the epoxy board (1) is provided with the second connecting end (5) on one side of the second signal probes (4).
9. The semiconductor device testing system according to claim 8, wherein the first connection terminal (3) comprises a first power probe (301), a second power probe (302) and a third power probe (303), and the first power probe (301), the second power probe (302) and the third power probe (303) are sequentially arranged on the side surface of the epoxy board (1) from top to bottom; the number of the first power probe (301), the second power probe (302) and the third power probe (303) is a plurality, the first power probe (301) is a bus positive pole, the second power probe (302) is an inductance layer (27), and the third power probe (303) is a bus negative pole.
10. A semiconductor device test system according to claim 8, characterized in that the second connection terminal (5) comprises a number of fourth power probes (501), the fourth power probes (501) being arranged at the bottom of the epoxy board (1).
11. The semiconductor device testing system according to any one of claims 8 to 10, wherein an automated tooling (70) is arranged inside the testing box body (50), a laminated busbar connecting device (90) is arranged on the rear side of the testing box body, the laminated busbar connecting device (90) is connected with the testing clamp (80), the testing clamp (80) is connected with a tested piece (6), the testing clamp (80) is arranged on the top of the automated tooling (70), and the tested piece (6) is placed on the automated tooling (70); the automatic tool (70) also comprises a shell (11), a heating table (12) for placing the tested piece (6), a guide device (14), a linear slide rail (15) and a fixing device (16), wherein,
the inboard of casing (11) is fixed and is provided with linear slide rail (15), the outer wall sliding connection in both sides of linear slide rail (15) and fixing device (16), be provided with guider (14) that a plurality of is used for accurate installation location on fixing device (16), the top surface of fixing device (16) is the fixed warm table (12) that is provided with still, warm table (12) cooperate with drive arrangement (13) to be connected and by drive arrangement (13) drive motion, drive arrangement (13) and casing (11) fixed connection.
12. The semiconductor device testing system according to claim 11, wherein the housing (11) comprises a bottom plate (1101), side plates (1102) and a rear side plate (1103), the side plates (1102) are symmetrically and fixedly arranged at the top of the bottom plate (1101) along two ends of a long side, the rear side plate (1103) is further fixedly arranged at the top of the bottom plate (1101), two ends of the rear side plate (1103) are respectively attached to the two side plates (1102) and connected into an integral structure, and linear sliding rails (15) are fixedly connected to the inner walls of the side plates (1102).
13. The semiconductor device testing system according to claim 12, wherein a heat insulation board (17) is attached to the bottom of the heating table (12), the heat insulation board (17) is fixedly connected with the top of the fixing device (16), a plurality of heating holes are formed in the side surface, close to the rear side plate (1103), of the heating table (12), and heating rods are placed in the heating holes and used for heating the heating table (12).
14. The semiconductor device test system according to claim 13, wherein the driving device (13) comprises a first cylinder (1301), a second cylinder (1302), a third cylinder (1303), and a pneumatic finger (1304), wherein,
the first air cylinder (1301) is fixedly arranged at the top of the bottom plate (1101) through a bolt and far away from one side of the rear side plate (1103), and the first air cylinder (1301) is stretched and shortened and clamped with the fixing device (16) to limit the sliding of the fixing device (16);
the second air cylinder (1302) is arranged between the rear side plate (1103) and the first air cylinder (1301) and is fixedly connected with the bottom plate (1101), the second air cylinder (1302) works to drive the fixing device (16) to move up and down along the guide device (14), and one end, close to the rear side plate (1103), of the fixing device (16) is further connected with the pneumatic finger (1304);
pneumatic finger (1304) is fixed to be set up in the flexible end of third cylinder (1303), third cylinder (1303) link to each other with posterior lateral plate (1103), and the flexible end of third cylinder (1303) runs through posterior lateral plate (1103) and is concertina movement, cooperation pneumatic finger (1304) drive fixing device (16) horizontal reciprocating motion.
15. A semiconductor device testing system according to any of claims 12-14, characterized in that the guiding means (14) comprises a guide post (1401) and a guide sleeve (1402), the guide post (1401) extends through the guide sleeve (1402), and both the guide post (1401) and the guide sleeve (1402) are connected to the fixing means (16).
16. The semiconductor device testing system of claim 15, wherein the fixture (16) comprises a guide sleeve fixing plate (1601) and a guide post fixing plate (1602), the guide post fixing plate (1602) is "L" shaped, a transverse portion of the fixture (16) is used for connecting with the guide sleeve fixing plate (1601) and supporting the guide sleeve fixing plate (1601), a longitudinal portion of the guide post fixing plate (1602) is slidably connected with the linear guideway (15) near a side wall surface of the side plate (1102), and a limiting plate is further disposed between the two guide post fixing plates (1602);
the limiting plate is provided with a cavity matched with the telescopic end of the first air cylinder (1301) in size, and the first air cylinder (1301) telescopically penetrates through the cavity to limit the fixing device (16);
blind holes are formed in four corners of the guide pillar fixing plate (1602), through holes coinciding with the blind holes are formed in four corners of the guide sleeve fixing plate (1601), and the guide sleeve fixing plate (1601) is fixedly connected with the guide sleeve (1402); the guide pillar (1401) penetrates through the through hole and is inserted into the blind hole.
17. The semiconductor device testing system according to claim 15, wherein the laminated busbar connection device (90) comprises a power input end (20), a first laminated busbar (21), a supporting capacitor C1, a current-limiting transistor Q1, a second laminated busbar (24) and a current sensor (25), a supporting capacitor C1 is fixedly arranged on a rear bolt of the first laminated busbar (21), the current-limiting transistor Q1 is arranged at the bottom of the first laminated busbar (21), the second laminated busbar (24) is further arranged at the lower end of the current-limiting transistor Q1, the current sensor (25) is arranged on the right side of the second laminated busbar (24), the two current sensors (25) are respectively a current sensor CT1 and a current sensor CT2, and the lower end left side of the second laminated busbar (24) sequentially comprises a busbar positive electrode layer (26), a current sensor CT2 and a bus positive electrode layer from top to bottom, An inductance layer (27) and a bus negative electrode layer (28); the bus positive electrode layer (26), the inductance layer (27) and the bus negative electrode layer (28) are sequentially connected with the first power probe (301), the second power probe (302) and the third power probe (303).
18. A method for testing a semiconductor device test system according to any one of claims 1 to 17, the method comprising:
the method comprises the following steps: inputting an instruction through the upper computer (30), opening the test box body (50), and placing the tested piece (6) on the automatic tool (70);
step two: the test box body (50) is closed by inputting an instruction through the upper computer (30), and a key on a panel of the upper computer (30) is operated to enable the automatic tool (70) to move upwards, and at the moment, the tested piece (6) is connected with the test fixture (80);
step three: operating the upper computer (30), selecting a test item on a panel of the upper computer (30), clicking to start testing, and operating the master control system PLC according to an instruction of the upper computer (30);
step four: after the test is finished, the data of the oscilloscope (40) are automatically transmitted to the upper computer (30), and a user obtains the test data through the upper computer (30).
CN201911150174.5A 2019-11-21 2019-11-21 Semiconductor device test system and test method thereof Pending CN110954803A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111537857A (en) * 2020-04-07 2020-08-14 深圳青铜剑科技股份有限公司 Semiconductor device test system and method
CN111736058A (en) * 2020-06-18 2020-10-02 清华大学 Test platform suitable for chip test system
CN111781405A (en) * 2020-06-17 2020-10-16 西安易恩电气科技有限公司 IPM dynamic parameter test fixture
CN111913089A (en) * 2020-06-04 2020-11-10 西安易恩电气科技有限公司 IGBT high-temperature reverse bias test system
CN112241140A (en) * 2020-10-28 2021-01-19 浙江佳乐科仪股份有限公司 Efficient PLC detection device
CN112630615A (en) * 2020-12-10 2021-04-09 华北电力大学 Crimping type IGBT chip dynamic characteristic experiment platform and measuring method
CN112964972A (en) * 2021-02-03 2021-06-15 上海陆芯电子科技有限公司 Constant temperature test system and test method
CN113640556A (en) * 2021-08-11 2021-11-12 山东大学 Probe card of probe station
CN113655242A (en) * 2020-04-29 2021-11-16 株洲中车时代半导体有限公司 Clamp and method for IGBT device dynamic test
CN114089150A (en) * 2020-07-03 2022-02-25 富士电机株式会社 Semiconductor chip testing device and testing method

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CN111537857A (en) * 2020-04-07 2020-08-14 深圳青铜剑科技股份有限公司 Semiconductor device test system and method
CN113655242B (en) * 2020-04-29 2024-04-19 株洲中车时代半导体有限公司 Clamp and method for dynamic test of IGBT device
CN113655242A (en) * 2020-04-29 2021-11-16 株洲中车时代半导体有限公司 Clamp and method for IGBT device dynamic test
CN111913089A (en) * 2020-06-04 2020-11-10 西安易恩电气科技有限公司 IGBT high-temperature reverse bias test system
CN111781405A (en) * 2020-06-17 2020-10-16 西安易恩电气科技有限公司 IPM dynamic parameter test fixture
CN111736058B (en) * 2020-06-18 2021-08-10 清华大学 Test platform suitable for chip test system
CN111736058A (en) * 2020-06-18 2020-10-02 清华大学 Test platform suitable for chip test system
CN114089150A (en) * 2020-07-03 2022-02-25 富士电机株式会社 Semiconductor chip testing device and testing method
CN112241140A (en) * 2020-10-28 2021-01-19 浙江佳乐科仪股份有限公司 Efficient PLC detection device
CN112630615A (en) * 2020-12-10 2021-04-09 华北电力大学 Crimping type IGBT chip dynamic characteristic experiment platform and measuring method
CN112964972A (en) * 2021-02-03 2021-06-15 上海陆芯电子科技有限公司 Constant temperature test system and test method
CN113640556A (en) * 2021-08-11 2021-11-12 山东大学 Probe card of probe station
CN113640556B (en) * 2021-08-11 2023-03-03 山东大学 Probe card of probe station

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