CN110954722B - Probe card and method for realizing probe position adjustment by using same - Google Patents
Probe card and method for realizing probe position adjustment by using same Download PDFInfo
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- CN110954722B CN110954722B CN201811133265.3A CN201811133265A CN110954722B CN 110954722 B CN110954722 B CN 110954722B CN 201811133265 A CN201811133265 A CN 201811133265A CN 110954722 B CN110954722 B CN 110954722B
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- 239000000523 sample Substances 0.000 title claims abstract description 278
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000005057 refrigeration Methods 0.000 claims abstract description 52
- 238000012360 testing method Methods 0.000 claims abstract description 39
- 230000008859 change Effects 0.000 claims abstract description 28
- 235000012431 wafers Nutrition 0.000 claims description 175
- 238000001816 cooling Methods 0.000 claims description 80
- 238000006073 displacement reaction Methods 0.000 claims description 13
- 239000007769 metal material Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 abstract description 21
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 238000012937 correction Methods 0.000 abstract description 3
- 230000008602 contraction Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011217 control strategy Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
Abstract
The embodiment of the invention provides a probe card and a method for realizing probe position adjustment by using the same. The probe card includes: a plurality of probe seats, each probe seat is provided with at least one probe; the device comprises at least two adjacent probe seats, a support, a plurality of measuring units and a plurality of measuring units, wherein the support is arranged between the at least two adjacent probe seats and is used for adjusting the distance between the corresponding two adjacent probe seats so as to meet the test of a target measuring area on a wafer to be tested; and the refrigeration wafer is connected with the corresponding brackets and used for changing the length between the corresponding brackets. According to the technical scheme provided by the invention, the distance between the corresponding probe seats can be automatically adjusted according to the change of the environmental temperature during the test of the wafer to be tested, so that the correction of the probe positions is realized, and the alignment accuracy between the probe and the measurement area can be improved.
Description
Technical Field
The invention belongs to the technical field of testing, and particularly relates to a probe card and a method for realizing probe position adjustment by using the same.
Background
In the prior art, because the thermal expansion coefficients between the probe card and the wafer are different, when the temperature of the testing environment of the wafer is changed, the degree of thermal expansion and contraction between the probe card and the wafer is different, and if the probe card used before is not replaced and adjusted, the problem that the probe on the probe card cannot accurately contact with the measuring area on the wafer is easily caused.
In particular, there is a very high requirement for precise matching between probes of a probe card applied to a large wafer and measurement areas of the wafer, and displacement of the probes or the measurement areas can lead to a risk of test failure or damage to the probes.
The current method is to purchase probe cards suitable for different temperatures, and replace and calibrate the probe card when the temperature of the test environment changes, otherwise, the probe of the probe card cannot accurately contact the measurement area on the wafer, so that the phenomena of test failure and early wear of the probe occur, and the irreparable damage of the probe card is also possibly caused.
Accordingly, there remains a need in the art for improvement.
It should be noted that the information of the present invention in the above background section is only for enhancing the understanding of the background of the present invention and thus may include information that does not form the prior art that is already known to those of ordinary skill in the art.
Disclosure of Invention
According to one aspect of the present invention, there is provided a probe card comprising: a plurality of probe seats, each probe seat is provided with at least one probe; the device comprises at least two adjacent probe seats, a support, a plurality of measuring units and a plurality of measuring units, wherein the support is arranged between the at least two adjacent probe seats and is used for adjusting the distance between the corresponding two adjacent probe seats so as to meet the test of a target measuring area on a wafer to be tested; and the refrigeration wafer is connected with the corresponding bracket and used for changing the length of the corresponding bracket.
In one exemplary embodiment of the invention, the probe card includes a central region and a rim region, the cooling wafer and corresponding support being disposed in the rim region.
In an exemplary embodiment of the invention, the edge region includes a first region proximate to the central region and a second region distal to the central region; wherein the first region and the second region each comprise a plurality of sub-regions; at least one cooling wafer and a corresponding holder are arranged in each sub-region.
In an exemplary embodiment of the present invention, the probe card is in the shape of a disk, and the rim region includes a first annular region near the center region and a second annular region far from the center region; wherein the first annular region includes first to fourth sector regions; the second annular region includes fifth to eighth sector regions; at least one cooling wafer and a corresponding support are arranged in each sector.
In an exemplary embodiment of the invention, the bracket is composed of a metallic material having a predetermined coefficient of linear thermal expansion at a predetermined temperature.
In an exemplary embodiment of the present invention, the support is a cylinder or a rectangular parallelepiped.
In an exemplary embodiment of the invention, the cooling wafers are respectively arranged on the respective holders or at least partially embedded in the respective holders.
In an exemplary embodiment of the present invention, each of the cooling wafers is electrically connected to a tester, respectively, to change the temperature of the corresponding cooling wafer according to the magnitude of the current inputted to the cooling wafer by the tester, thereby realizing the change of the length of the corresponding bracket.
In an exemplary embodiment of the invention, the probe card has a different coefficient of thermal expansion than the wafer to be tested.
According to an aspect of the present invention, there is provided a method for implementing probe position adjustment using the probe card according to any one of the above embodiments, the method including: adjusting the magnitude of the current input to the refrigeration wafer to change the temperature of the refrigeration wafer; determining the length of a corresponding bracket according to the temperature of the refrigeration wafer so as to adjust the distance between two adjacent probe seats; and correcting the positions of probes in the two adjacent probe seats according to the adjusted distance between the two adjacent probe seats so as to meet the test of the target measuring area on the wafer to be tested.
In an exemplary embodiment of the present invention, adjusting the magnitude of the current input to the cooling wafer to change the temperature of the cooling wafer includes: if the target ambient temperature of the wafer to be tested is greater than the ambient temperature of the wafer to be tested at the last time, negative electricity current is input to the refrigeration chip so as to raise the temperature of the refrigeration chip; and if the target ambient temperature of the wafer to be tested is smaller than the ambient temperature of the wafer to be tested at the last time, inputting positive current to the refrigeration chip so as to reduce the temperature of the refrigeration chip.
In an exemplary embodiment of the present invention, a plurality of cooling wafers are disposed in the probe card and are respectively connected to the corresponding holders; the method further comprises the steps of: the magnitude of the current input to each refrigeration wafer is independently controlled.
In an exemplary embodiment of the present invention, the probe card includes a central region and a rim region, the rim region including a first region near the central region and a second region far from the central region, the first region and the second region each including a plurality of sub-regions, at least one cooling wafer and a corresponding holder being disposed in each sub-region; adjusting the magnitude of a current input to a refrigeration wafer to change the temperature of the refrigeration wafer, comprising: inputting a current of a first current value to a refrigeration wafer in each sub-region of the first region; inputting a current of a second current value to the refrigeration wafer in each sub-region of the second region; the first current value is less than the second current value.
In an exemplary embodiment of the present invention, determining the length of the corresponding rack according to the temperature of the cooling wafer to adjust the interval between the corresponding two adjacent probe seats includes: determining the length of a corresponding bracket according to the temperature of the refrigeration wafer, and generating stress for pushing the bracket to corresponding two adjacent probe seats; and controlling the displacement between the two adjacent probe seats according to the stress so as to adjust the distance between the two adjacent probe seats.
In an exemplary embodiment of the present invention, correcting probe positions in two adjacent probe seats according to an adjusted distance between the two adjacent probe seats to satisfy a test of a target measurement area on a wafer to be tested includes: if the trace of the probe in the probe seat after the probe contacts the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the positions of the probes in the corresponding two adjacent probe seats; if at least part of the trace of the probe in the probe seat after the probe contacts the target measuring area is positioned outside the corresponding target measuring area, the positions of the probes in the two adjacent probe seats are continuously corrected.
In an exemplary embodiment of the present invention, adjusting the magnitude of the current input to the refrigeration wafer includes: the magnitude of the current input to the refrigeration wafer is controlled by a tester.
According to the probe card and the method for realizing probe position adjustment by using the probe card, provided by the embodiment of the invention, the bracket is arranged between at least two adjacent probe seats and is arranged on the refrigerating wafer connected with the corresponding bracket, so that the current input to the refrigerating wafer can be changed according to the environmental temperature change during the test of the wafer to be tested, the distance between the corresponding two adjacent probe seats is automatically adjusted, the correction of the probe positions between the probes in the corresponding two adjacent probe seats is realized, the alignment accuracy between the probes and the measuring area is improved, the test success rate of the wafer to be tested is improved, the abrasion rate of the probes on the probe card is reduced, the service life of the probe card is prolonged, the cost for purchasing the probe card applicable to different temperatures due to the change of the test environmental temperature in the prior art is reduced, and the time cost required for adjusting the newly exchanged probe card in the prior art is reduced.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments of the invention, when taken in conjunction with the accompanying drawings. The drawings are merely exemplary illustrations of the invention and are not necessarily drawn to scale. In the drawings, like reference numerals refer to the same or similar parts throughout. Wherein:
fig. 1 is a schematic view showing a structure of a probe card according to an embodiment of the present invention;
FIG. 2 is a top view illustrating a probe card according to an embodiment of the invention;
FIG. 3 is a top view illustrating another probe card according to an embodiment of the invention;
FIG. 4 is a top view illustrating yet another probe card according to an embodiment of the invention;
FIG. 5 is a top view illustrating yet another probe card according to an embodiment of the invention;
FIG. 6 is a schematic diagram showing the structure of a holder and a cooling wafer according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating another configuration of a holder and a cooling wafer according to an embodiment of the present invention;
FIG. 8 is a flowchart illustrating a method for implementing probe position adjustment using a probe card according to an embodiment of the present invention;
FIG. 9 is a schematic diagram showing traces of a probe in contact with a target measurement area according to an embodiment of the invention;
fig. 10 is a schematic diagram showing a normal trace and a trace requiring further displacement according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments that embody features and advantages of the present invention are described in detail in the following description. It will be understood that the invention is capable of various modifications in various embodiments, all without departing from the scope of the invention, and that the description and drawings are intended to be illustrative in nature and not to be limiting.
In the following description of various exemplary embodiments of the invention, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration various exemplary structures, systems, and steps in which aspects of the invention may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized and structural and functional modifications may be made without departing from the scope of the present invention.
Fig. 1 is a schematic view showing a structure of a probe card according to an embodiment of the present invention.
As shown in fig. 1, the probe card 100 according to the embodiment of the present invention may include a plurality of probe holders (for example, six probe holders are illustrated in the drawings for illustration, but the present invention is not limited thereto). Wherein, each probe seat is provided with at least one probe 140.
In the embodiment of the present invention, the number of probe sockets and the distribution of each probe socket included in the probe card 100 may be designed according to the number and distribution of chips to be tested on a wafer to be tested and target measurement areas of each chip to be tested (for example, pads to be tested on each chip to be tested), which is not limited by the present invention.
In the embodiment shown in fig. 1, the example is illustrated in which each probe holder includes 11 probes, and the adjacent two probes in the same probe holder are equally spaced, but in actual cases, the number of probes and the intervals between the probes included in each probe holder are not limited, the number of probes in each probe holder may be the same or different, and the intervals between the adjacent two probes in each probe holder may be equally spaced or non-equally spaced, and may be designed according to specific application scenarios.
Wherein, a bracket is disposed between at least two adjacent probe holders in the plurality of probe holders of the probe card 100, and the bracket can be used for adjusting the interval between the two adjacent probe holders so as to satisfy the test of the target measurement area on the wafer to be tested.
With continued reference to fig. 1, a bracket 121 may be disposed between the probe mount 111 and the adjacent probe mount 112, a bracket 122 may be disposed between the probe mount 113 and the adjacent probe mount 114, and a bracket 123 may be disposed between the probe mount 115 and the adjacent probe mount 116.
Further, the probe card 100 may further include a cooling chip connected to the corresponding holder, and the cooling chip may be used to change the length of the corresponding holder, thereby realizing a function of adjusting the interval between the corresponding two adjacent probe pins.
In the embodiment of the invention, the cooling wafer can be called a semiconductor cooling wafer, and is also called a thermoelectric cooling wafer. Its advantages are no slide parts, and high reliability and no pollution to refrigerant. The refrigerating wafer utilizes the Peltier effect of semiconductor materials, and when direct current passes through a couple formed by connecting two different semiconductor materials in series, heat can be respectively absorbed and released at two ends of the couple, so that the aim of refrigerating can be fulfilled. The refrigerating wafer is a refrigerating technology for producing negative thermal resistance, and features no moving parts and high reliability.
For example, a refrigerator wafer model TEC1-127.06-200C-Y-0.02-150 may be used, the corresponding specifications of which are encoded as follows: TE C1-127.06-125-N-0.10-150, where "TE" represents the code of the refrigerated wafer, "C" represents the ceramic panel (if "S" represents the small wafer), "1" represents the level one (if 2 represents the level two, if 3 represents the level three), "127" represents the total logarithm of the P-type and N-type of the die, "06" represents the maximum operating current (in a), 125 "represents the maximum operating temperature (other values such as 150 or 200), N" represents the absence of a moisture seal, if Y "represents the presence of a moisture seal," 0.10 "represents the thickness tolerance of 0.10mm, other values such as 0.09mm, 0.08mm, 0.07mm, 0.06mm, 0.05mm, 0.04mm, 0.03mm, 0.02mm, etc., and" 150 "represents the wire length in mm.
In the embodiment shown in fig. 1, the cooling wafers 131, 132, 133 are exemplified. Specifically, the cooling chip 131 is connected to the support 121, and may be used to change the length of the support 121, so as to adjust the distance between the adjacent probe seats 111 and 112, thereby correcting the probe positions of the probes in the probe seats 111 and 112, so that the probes in the probe seats 111 and 112 can be aligned with the target measurement area on the wafer to be tested more accurately.
Similarly, the cooling wafer 132 is connected to the support 122, and may be used to change the length of the support 122 to adjust the distance between the adjacent probe holders 113 and 114, so as to correct the probe positions of the probes in the probe holders 113 and 114, so that the probes in the probe holders 113 and 114 can be aligned with the target measurement area on the wafer to be tested more precisely.
The cooling chip 133 is connected to the support 123 and can be used to change the length of the support 123 to adjust the distance between the adjacent probe holders 115 and 116, thereby correcting the probe positions of the probes in the probe holders 115 and 116 so that the probes in the probe holders 115 and 116 can be aligned with the target measurement area on the wafer to be tested more precisely.
In the embodiment of the invention, each cooling wafer is electrically connected to the testing machine 200, so as to change the temperature of the corresponding cooling wafer according to the current input to the cooling wafer by the testing machine 200, thereby realizing the function of changing the length of the corresponding bracket.
It should be noted that the present invention is not limited to supplying current to each cooling wafer by the tester 200, and may also supply current to each cooling wafer by any other power supply assembly.
With continued reference to the embodiment shown in fig. 1, the cooling chip 131, the cooling chip 132 and the cooling chip 133 are electrically connected to the tester 200, respectively, and the tester 200 inputs current to the cooling chip 131, the cooling chip 132 and the cooling chip 133, respectively.
In the embodiment shown in fig. 1, it is assumed that the current input to the cooling wafer 131 by the tester 200 may be I1, the current input to the cooling wafer 132 may be I2, and the current input to the cooling wafer 133 may be I3.
In some embodiments, the tester 200 may independently control the magnitude of the current input into each of the refrigerated wafers, and may control the magnitude of the current input into the corresponding two adjacent probe holders according to the displacement required to be adjusted, for example, the magnitudes of the currents I1, I2, and I3 may be different.
In other embodiments, the tester 200 may also control the current input to at least a portion of the cooling wafer to be the same, as the present invention is not limited in this regard. The corresponding adjustment and setting of the current control strategy can be performed according to the specific condition of the wafer to be tested.
In the embodiment of the invention, the positions of the probes on the probe card can be electrically adjusted. The tester controls the temperature of the refrigerating wafer through the magnitude of the output current, thereby influencing the length of the probe seat bracket, generating stress for pushing two adjacent probe seats connected with the bracket by the bracket, and correcting the positions of probes in the two adjacent probe seats by using the stress.
In an exemplary embodiment, the radius size of the probe card 100 may be equal to or greater than the first threshold.
In an exemplary embodiment, the first threshold may be 12 inches.
In the embodiment of the present invention, the probe card 100 may refer to a probe card for testing a large-sized wafer, and the size of the wafer is typically 8 inches, 10 inches, 12 inches, 14 inches, 16 inches, etc., where a wafer greater than or equal to 12 inches may be considered as a large-sized wafer, and a wafer less than 12 inches may be considered as a small-sized wafer, but the present invention is not limited thereto, and the value of the first threshold may be adjusted according to the specific application scenario.
In an embodiment of the present invention, the thermal expansion coefficients of the probe card 100 and the wafer to be tested may be different.
According to the probe card and the method for realizing probe position adjustment by using the probe card, provided by the embodiment of the invention, the bracket is arranged between at least two adjacent probe seats and is arranged on the refrigerating wafer connected with the corresponding bracket, so that the current input to the refrigerating wafer can be changed according to the environmental temperature change during the test of the wafer to be tested, the distance between the corresponding two adjacent probe seats is automatically adjusted, the correction of the probe positions between the probes in the corresponding two adjacent probe seats is realized, the alignment accuracy between the probes and the measuring area is improved, the test success rate of the wafer to be tested is improved, the abrasion rate of the probes on the probe card is reduced, the service life of the probe card is prolonged, the cost for purchasing the probe card applicable to different temperatures due to the change of the test environmental temperature in the prior art is reduced, and the time cost required for adjusting the newly exchanged probe card in the prior art is reduced.
In the embodiment of the invention, the cooling wafer can be buried and installed in the probe card partition, and the cooling wafer is connected to the bracket beside the probe seat. During the test, the temperature of the refrigerating wafer is controlled by the tester to influence the length of the probe seat support, so as to generate stress for the support to push the probe seat, and the position of the probe is corrected by using the stress.
Fig. 2 is a top view illustrating a probe card according to an embodiment of the present invention.
As shown in fig. 2, the probe card 100 may include a center region and a rim region where the cooling wafer and corresponding support may be disposed. In practice, the probe and the target measurement area cannot be precisely contacted with each other, and therefore, the cooling chip is preferably mounted on the edge area of the probe card, but the invention is not limited thereto.
In the embodiment shown in fig. 2, the probe card 100 is illustrated as a square in top view, but the present invention is not limited thereto, and the probe card 100 may have any suitable shape and may be designed according to the shape of the wafer to be tested.
Fig. 3 is a top view illustrating another probe card according to an embodiment of the invention.
The probe card 100 according to the embodiment of the present invention may be different from the embodiment shown in fig. 2 described above in that the edge region may further include a first region near the central region and a second region far from the central region. Wherein the first region and the second region may each comprise a plurality of sub-regions; at least one cooling wafer and a corresponding holder can be arranged in each sub-region.
As shown in fig. 3, the first region may include a sub-region 301, a sub-region 302, a sub-region 303, and a sub-region 304. The second region may include sub-region 305, sub-region 306, sub-region 307, and sub-region 308.
It should be noted that, in the embodiment shown in fig. 3, the sub-areas in the first area and the second area are symmetrically divided, but the present invention is not limited thereto, and the division and distribution of the sub-areas and the areas may be designed according to the specific situation of the wafer to be tested.
Fig. 4 is a top view illustrating yet another probe card according to an embodiment of the invention.
The difference from the embodiments shown in fig. 2 and 3 described above is that the probe card 100 of the embodiment shown in fig. 4 may be in the shape of a disk. The wafer is generally circular, so the probe card 100 can be designed to be a circular disk.
As shown in fig. 4, the probe card 100 may include a center region and an edge region. Wherein the rim region may comprise a first annular region proximate the central region and a second annular region distal the central region.
The first annular region may include first to fourth sector regions, such as a first sector region 401, a second sector region 402, a third sector region 403, and a fourth sector region 404 in the drawings.
The second annular region may include fifth to eighth sectors, such as fifth sector 405, sixth sector 406, seventh sector 407, and eighth sector 408 in the illustration.
Wherein at least one cooling wafer and a corresponding support can be arranged in each sector.
In the above embodiment, the edge area of the probe card may be divided into a first area close to the central area and a second area far from the central area, or a first annular area close to the central area and a second annular area far from the central area, but the present invention is not limited thereto, and may be specifically divided according to the distribution structure of PADs (PADs) of chips to be tested on a wafer to be tested. Fig. 5 is a top view illustrating yet another probe card according to an embodiment of the invention.
In the embodiment shown in fig. 5, the edge region of the probe card 100 may be divided into a first annular region near the center region, a third annular region far from the center region, and a second annular region between the first annular region and the third annular region.
For example, the first annular region may include a first sector region 501, a second sector region 502, a third sector region 503, and a fourth sector region 504 as shown. The second annular region may include a fifth fan region 505, a sixth fan region 506, a seventh fan region 507, and an eighth fan region 508 as shown. The third annular region may include a ninth sector region 509, a tenth sector region 510, an eleventh sector region 511, and a twelfth sector region 512 in the drawings.
Wherein at least one cooling wafer and a corresponding support can be arranged in each sector.
In an exemplary embodiment, the bracket may be a cylinder or a rectangular parallelepiped. However, the present invention is not limited thereto, and the holder may be designed in any suitable shape as long as it can perform a function of adjusting the interval between the adjacent two probe seats connected thereto.
In an exemplary embodiment, the cooling wafers may be disposed on or at least partially embedded in the respective brackets, respectively. However, the present invention is not limited thereto, and in the embodiment of the present invention, the positional relationship and the shape structure between the cooling wafer and the holder are not particularly limited as long as the temperature of the cooling wafer can be conducted to the corresponding holder.
Fig. 6 is a schematic view showing a structure of a holder and a cooling wafer according to an embodiment of the present invention.
As shown in fig. 6, the support 601 in the embodiment of the present invention may be rectangular parallelepiped, the cooling wafer 602 may be rectangular parallelepiped, and the cooling wafer 602 may be partially embedded in the support 601.
Fig. 7 is a schematic view showing the structure of another carrier and a cooling wafer according to an embodiment of the present invention.
As shown in fig. 7, the bracket 701 according to the embodiment of the present invention may be cylindrical, the cooling wafer 702 may be cylindrical, and the cooling wafer 702 may be completely embedded in the bracket 701.
In an exemplary embodiment, the bracket may be composed of a metallic material having a predetermined linear thermal expansion coefficient at a predetermined temperature.
In the embodiment of the invention, the bracket beside the probe seat can be made of metal, such as aluminum, copper and the like. Wherein each metal has a linear thermal expansion coefficient at 20 ℃ (units of 1E-6/K or 1E-6/. Degree.C) as set forth in Table 1 below.
TABLE 1
| Metal name | Element symbol | Coefficient of linear thermal expansion |
| Beryllium (beryllium) | Be | 12.3 |
| Antimony (Sb) | Sb | 10.5 |
| Copper (Cu) | Cu | 17.5 |
| Chromium (Cr) | Cr | 6.2 |
| Germanium (Ge) | Ge | 6.0 |
| Iridium | Ir | 6.5 |
| Manganese (Mn) | Mn | 23.0 |
| Nickel (Ni) | Ni | 13.0 |
| Silver (Ag) | Ag | 19.5 |
| Aluminum (Al) | Al | 23.2 |
| Lead | Pb | 29.3 |
| Cadmium (Cd) | Cd | 41.0 |
| Iron (Fe) | Fe | 12.2 |
| Gold alloy | Au | 14.2 |
| Magnesium (Mg) | Mg | 26.0 |
| Molybdenum (Mo) | Mo | 5.0 |
| Platinum | Pt | 9.0 |
| Tin (Sn) | Sn | 2.0 |
In the embodiment of the invention, different displacement parameters can be formed by utilizing different linear thermal expansion coefficients of metal materials at the same test environment temperature, for example, the linear thermal expansion coefficient of aluminum is higher than that of copper, and the displacement amplitude is larger; the linear thermal expansion coefficient of copper is lower, the corresponding displacement amplitude is smaller, and therefore the adjustable range is more accurate, and different materials can be used according to different probe card requirements, so that the high customization of the probe card can be realized.
Fig. 8 is a flowchart illustrating a method of implementing probe position adjustment using a probe card according to an embodiment of the present invention.
As shown in fig. 8, the method for implementing probe position adjustment by using the probe card according to the embodiment of the present invention may include the following steps. The probe card may be as described with reference to the embodiments shown in fig. 1-7 above.
In step S810, the magnitude of the current input to the cooling wafer is adjusted to change the temperature of the cooling wafer.
In an exemplary embodiment, adjusting the magnitude of the current input to the cooling wafer to change the temperature of the cooling wafer may include: if the target ambient temperature of the wafer to be tested is greater than the ambient temperature of the wafer to be tested at the last time, negative electricity current is input to the refrigeration chip so as to raise the temperature of the refrigeration chip; and if the target ambient temperature of the wafer to be tested is smaller than the ambient temperature of the wafer to be tested at the last time, inputting positive current to the refrigeration chip so as to reduce the temperature of the refrigeration chip.
For example, if the set ambient temperature is-40 ℃ during the wafer testing of the previous week, and the required target ambient temperature is 100 ℃ during the wafer testing of the current week, at this time, negative current can be input to the cooling wafer, and the temperature of the cooling wafer can be increased, so that the length of the corresponding support can be stretched, and the distance between two adjacent probe seats connected with the support can be increased.
For another example, if the set ambient temperature is 100 ℃ during the wafer testing of the previous week, and the required target ambient temperature is-40 ℃ during the wafer testing of the current week, at this time, positive current can be input to the cooling wafer, and the temperature of the cooling wafer can be reduced, so that the length of the corresponding support can be shortened, and the distance between two adjacent probe seats connected with the support can be shortened.
In an exemplary embodiment, a plurality of cooling wafers are disposed in the probe card and are respectively connected to the corresponding holders. The method may further comprise: the magnitude of the current input to each refrigeration wafer is independently controlled.
In an exemplary embodiment, the probe card may include a center region and a rim region, the rim region may include a first region near the center region and a second region far from the center region, the first region and the second region may each include a plurality of sub-regions, and at least one cooling wafer and a corresponding holder may be respectively disposed in each sub-region. Wherein the adjusting the magnitude of the current input to the cooling wafer to change the temperature of the cooling wafer may include: inputting a current of a first current value to a refrigeration wafer in each sub-region of the first region; and inputting a current of a second current value to the refrigeration wafer in each sub-area of the second area.
Taking the embodiment shown in fig. 3 as an example for illustration, the same first current value may be input to each sub-area, that is, each of the cooling wafers in the sub-areas 301-304 in the first area, so that each of the cooling wafers in the sub-areas 301-304 is controlled to have the same temperature, because the distances between the sub-areas 301-304 and the central area are equal, and in general, the degree of influence of thermal expansion and cold contraction on the probes in the probe seats is approximate, so that the cooling wafers in the same area can be set to the same current value, and thus the complexity of controlling the output current of the tester can be reduced. However, the present invention is not limited to this, and the cooling wafers in the respective sub-areas in the same area may be individually controlled.
In an exemplary embodiment, the first current value is less than the second current value.
Also, as described above with reference to fig. 3, since the second region is far from the central region, the probe therein is affected to a greater extent by thermal expansion and contraction than the probe in the first region, and thus the refrigerator wafer therein can be inputted with a greater second current value to control the temperature change thereof.
In step S820, the length of the corresponding rack is determined according to the temperature of the cooling wafer, so as to adjust the distance between the two adjacent probe seats.
In an exemplary embodiment, determining the length of the corresponding rack according to the temperature of the cooling wafer to adjust the interval between the two adjacent probe seats may include: determining the length of a corresponding bracket according to the temperature of the refrigeration wafer, and generating stress for pushing the bracket to corresponding two adjacent probe seats; and controlling the displacement between the two adjacent probe seats according to the stress so as to adjust the distance between the two adjacent probe seats.
In step S830, the positions of the probes in the two adjacent probe holders are corrected according to the adjusted distance between the two adjacent probe holders so as to satisfy the test of the target measurement area on the wafer to be tested.
In an exemplary embodiment, correcting the probe positions in the two adjacent probe seats according to the adjusted distance between the two adjacent probe seats so as to meet the test of the target measurement area on the wafer to be tested may include: if the trace of the probe in the probe seat after the probe contacts the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the positions of the probes in the corresponding two adjacent probe seats; if at least part of the trace of the probe in the probe seat after the probe contacts the target measuring area is positioned outside the corresponding target measuring area, the positions of the probes in the two adjacent probe seats are continuously corrected. See in particular the description of figures 9 and 10 below.
In an exemplary embodiment, the method may further include: and in the testing process of the wafer to be tested, controlling the target environment temperature to be in a constant state. For example, it is kept at 20 ℃ throughout the test.
In an exemplary embodiment, adjusting the magnitude of the current input to the refrigeration wafer may include: the magnitude of the current input to the refrigeration wafer is controlled by a tester.
In the embodiment of the invention, the tester can control the current output, the temperature of the refrigeration wafer is determined by the refrigeration wafer according to the current output, and the length of the corresponding bracket is determined by the temperature of the refrigeration wafer.
FIG. 9 is a schematic diagram showing traces of a probe in contact with a target measurement area according to an embodiment of the invention.
As shown in fig. 9, the target measurement area 901 is assumed to be a pad to be tested of a chip to be tested on a wafer to be tested, and if the size of the pad to be tested is 50 μm×40 μm, the whole surface size area of the pad to be tested is assumed to be the target measurement area.
In the embodiment of the invention, a signal can be sent out through a workstation computer of the testing machine, the testing machine provides stable current to be sent into the refrigerating wafer, the displacement of the probes in each area is controlled, and then whether the displacement is enough or not is judged by the trace after the probes contact the target measuring area.
Fig. 10 is a schematic diagram showing a normal trace and a trace requiring further displacement according to an embodiment of the present invention.
As shown in fig. 10, if the trace 1002 after the probe is in contact with the target measurement region 1001 is found to be completely within the target measurement region 1001 by observation, it can be determined as a normal trace. In contrast, if the trace 1004 after the probe is in contact with the target measurement region 1003 is found to be at least partially outside the target measurement region 1004, it can be determined that the trace of the displacement needs to be further adjusted.
According to the probe card and the method for realizing probe position adjustment by using the probe card, provided by the embodiment of the invention, aiming at the phenomenon that the probe card of a large wafer cannot accurately contact with a measuring area on the wafer due to thermal expansion and contraction of the probe card along with temperature change in the prior art, the bracket and the refrigeration chip are additionally arranged on the probe card, and the temperature change control is realized by using the refrigeration chip along with the change of current, so that the bracket realizes thermal expansion and contraction along with the temperature change of the refrigeration chip, and the probe seat is displaced according to the change of the thermal expansion and contraction of the bracket, thereby finally realizing the purpose of correcting the probe position.
Exemplary embodiments of probe cards and methods of implementing probe position adjustment using the same as set forth herein are described and/or illustrated in detail above. Embodiments of the invention are not limited to the specific embodiments described herein, but rather, components and/or steps of each embodiment may be utilized independently and separately from other components and/or steps described herein. Each component and/or each step of one embodiment may also be used in combination with other components and/or steps of other embodiments. When introducing elements/components/etc. that are described and/or illustrated herein, the terms "a," "an," and "the" are intended to mean that there are one or more of the elements/components/etc. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc., in addition to the listed elements/components/etc. Furthermore, the terms "first" and "second" and the like in the claims and in the description are used for descriptive purposes only and not for numerical limitation of their subject matter.
While the test methods, test apparatus, test carriers, and test systems presented herein have been described in terms of various specific embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the claims.
Claims (14)
1. A probe card, comprising:
a plurality of probe seats, each probe seat is provided with at least one probe; wherein,
a bracket is arranged between at least two adjacent probe seats and used for adjusting the distance between the corresponding two adjacent probe seats so as to meet the test of a target measuring area on a wafer to be tested, and the bracket has a preset linear thermal expansion coefficient at a preset temperature;
the refrigeration wafer is connected with the corresponding bracket and used for changing the length of the corresponding bracket;
the probe card comprises a central area and a border area, wherein the refrigeration wafer and the corresponding support are arranged in the border area;
the border region includes a first region proximate the central region and a second region distal the central region; wherein,
the first region and the second region each include a plurality of sub-regions;
at least one cooling wafer and a corresponding holder are arranged in each sub-region.
2. The probe card of claim 1, wherein the probe card is disk-shaped, and the rim region comprises a first annular region proximate the central region and a second annular region distal from the central region; wherein,
the first annular region includes first to fourth sector regions;
the second annular region includes fifth to eighth sector regions;
at least one cooling wafer and a corresponding support are arranged in each sector.
3. The probe card of claim 1, wherein the support is comprised of a metallic material.
4. The probe card of claim 1, wherein the support is a cylinder or a cuboid.
5. The probe card of claim 1, wherein the cooling wafers are disposed on or at least partially embedded in the respective brackets, respectively.
6. The probe card of claim 1, wherein each cooling die is electrically connected to a tester, respectively, to vary the temperature of the corresponding cooling die based on the magnitude of current input to the cooling die by the tester, thereby effecting a change in the length of the corresponding holder.
7. The probe card of claim 1, wherein the probe card has a different coefficient of thermal expansion than the wafer to be tested.
8. A method of implementing probe position adjustment using the probe card of any of claims 1-7, the method comprising:
adjusting the magnitude of the current input to the refrigeration wafer to change the temperature of the refrigeration wafer;
determining the length of a corresponding bracket according to the temperature of the refrigeration wafer so as to adjust the distance between two adjacent probe seats;
and correcting the positions of probes in the two adjacent probe seats according to the adjusted distance between the two adjacent probe seats so as to meet the test of the target measuring area on the wafer to be tested.
9. The method of claim 8, wherein adjusting the magnitude of the current input to the refrigeration wafer to change the temperature of the refrigeration wafer comprises:
if the target ambient temperature of the wafer to be tested is greater than the ambient temperature of the wafer to be tested at the last time, negative electricity current is input to the refrigeration chip so as to raise the temperature of the refrigeration chip;
and if the target ambient temperature of the wafer to be tested is smaller than the ambient temperature of the wafer to be tested at the last time, inputting positive current to the refrigeration chip so as to reduce the temperature of the refrigeration chip.
10. The method of claim 8, wherein a plurality of cooling wafers are disposed in the probe card and are each coupled to a respective rack; the method further comprises the steps of:
the magnitude of the current input to each refrigeration wafer is independently controlled.
11. The method of claim 8, wherein the probe card comprises a central region and a border region, the border region comprising a first region proximate to the central region and a second region distal to the central region, the first region and the second region each comprising a plurality of sub-regions, each sub-region having at least one cooling wafer and a corresponding support disposed therein; adjusting the magnitude of a current input to a refrigeration wafer to change the temperature of the refrigeration wafer, comprising:
inputting a current of a first current value to a refrigeration wafer in each sub-region of the first region;
inputting a current of a second current value to the refrigeration wafer in each sub-region of the second region;
the first current value is less than the second current value.
12. The method of claim 8, wherein determining the length of the respective rack based on the temperature of the refrigerated wafer to adjust the spacing between the respective two adjacent probe holders comprises:
determining the length of a corresponding bracket according to the temperature of the refrigeration wafer, and generating stress for pushing the bracket to corresponding two adjacent probe seats;
and controlling the displacement between the two adjacent probe seats according to the stress so as to adjust the distance between the two adjacent probe seats.
13. The method of claim 8, wherein correcting the probe positions in the two adjacent probe holders according to the adjusted spacing between the two adjacent probe holders to satisfy the testing of the target metrology area on the wafer under test comprises:
if the trace of the probe in the probe seat after the probe contacts the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the positions of the probes in the corresponding two adjacent probe seats;
if at least part of the trace of the probe in the probe seat after the probe contacts the target measuring area is positioned outside the corresponding target measuring area, the positions of the probes in the two adjacent probe seats are continuously corrected.
14. The method of claim 8, wherein adjusting the magnitude of the current input to the refrigeration wafer comprises:
the magnitude of the current input to the refrigeration wafer is controlled by a tester.
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| CN115308457B (en) * | 2022-06-30 | 2023-12-22 | 上海泽丰半导体科技有限公司 | Method for manufacturing probe card for high-low temperature test and probe card |
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| JP4886800B2 (en) * | 2009-02-26 | 2012-02-29 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Probe card, probe card manufacturing method, prober device |
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| KR20100093890A (en) * | 2009-02-17 | 2010-08-26 | 삼성전자주식회사 | Apparatus for testing semiconductor device |
| CN102033143A (en) * | 2009-09-29 | 2011-04-27 | 佛姆法克特股份有限公司 | Probe head control mechanism for probe card component |
| JP2011237184A (en) * | 2010-05-06 | 2011-11-24 | Micronics Japan Co Ltd | Probe card |
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