CN110954722A - Probe card and method for realizing probe position adjustment by using same - Google Patents
Probe card and method for realizing probe position adjustment by using same Download PDFInfo
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- CN110954722A CN110954722A CN201811133265.3A CN201811133265A CN110954722A CN 110954722 A CN110954722 A CN 110954722A CN 201811133265 A CN201811133265 A CN 201811133265A CN 110954722 A CN110954722 A CN 110954722A
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
Abstract
The embodiment of the invention provides a probe card and a method for realizing probe position adjustment by using the probe card. The probe card includes: the probe comprises a plurality of probe seats, wherein at least one probe is arranged in each probe seat; the device comprises a wafer to be tested, a probe seat, a support, a probe seat and a probe, wherein the support is arranged between at least two adjacent probe seats and used for adjusting the distance between the corresponding two adjacent probe seats so as to meet the test of a target measurement area on the wafer to be tested; and the refrigerating wafers are connected with the corresponding brackets and used for changing the length between the corresponding brackets. By the technical scheme provided by the invention, the distance between the corresponding probe seats can be automatically adjusted according to the environmental temperature change of the wafer to be tested during testing, so that the position of the probe is corrected, and the alignment accuracy between the probe and the measuring area can be improved.
Description
Technical Field
The invention belongs to the technical field of testing, and particularly relates to a probe card and a method for adjusting the position of the probe by using the probe card.
Background
In the prior art, due to different thermal expansion coefficients between a probe card and a wafer, when the temperature of a test environment of the wafer changes, the thermal expansion and contraction degrees between the probe card and the wafer are different, and if the probe card used before is not replaced and adjusted, the problem that a probe on the probe card cannot accurately contact a measurement area on the wafer is easily caused.
In particular, there is a very high requirement for precise matching between the probe of the probe card applied to a large wafer and the measurement area of the wafer, and the displacement of the probe or the measurement area can cause the risk of test failure or probe damage.
The conventional method is to purchase probe cards suitable for different temperatures respectively, and replace and adjust the probe cards when the temperature of a test environment changes, otherwise, probes of the probe cards cannot accurately contact a measurement area on a wafer, so that the phenomena of test failure and early probe abrasion occur, and the probe cards can be irreparably damaged.
Thus, there is still room for improvement in the prior art.
It is to be noted that the information invented in the above background section is only for enhancing the understanding of the background of the present invention, and therefore, may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
According to an aspect of the present invention, there is provided a probe card including: the probe comprises a plurality of probe seats, wherein at least one probe is arranged in each probe seat; the device comprises a wafer to be tested, a probe seat, a support, a probe seat and a probe, wherein the support is arranged between at least two adjacent probe seats and used for adjusting the distance between the corresponding two adjacent probe seats so as to meet the test of a target measurement area on the wafer to be tested; and the refrigerating wafer is connected with the corresponding bracket and used for changing the length of the corresponding bracket.
In one exemplary embodiment of the invention, the probe card includes a center region and a rim region, the chilling wafers and corresponding supports being disposed in the rim region.
In one exemplary embodiment of the invention, the edge region includes a first region close to the central region and a second region far from the central region; wherein the first region and the second region respectively comprise a plurality of sub-regions; at least one chill wafer and a corresponding holder are respectively arranged in each subregion.
In an exemplary embodiment of the invention, the probe card has a disc shape, and the edge region includes a first annular region close to the central region and a second annular region far from the central region; wherein the first annular region includes first to fourth sector regions; the second annular region includes fifth to eighth sector regions; at least one chill plate and a corresponding holder are respectively arranged in each sector.
In one exemplary embodiment of the present invention, the support is composed of a metal material having a predetermined linear thermal expansion coefficient at a predetermined temperature.
In an exemplary embodiment of the present invention, the support is a cylinder or a rectangular parallelepiped.
In an exemplary embodiment of the invention, the chilling plates are respectively disposed on or at least partially embedded in the respective brackets.
In an exemplary embodiment of the present invention, each of the chilling plates is electrically connected to the testing machine, so as to change the temperature of the corresponding chilling plate according to the current input to the chilling plate by the testing machine, thereby changing the length of the corresponding support.
In an exemplary embodiment of the invention, the probe card has a different coefficient of thermal expansion than the wafer to be tested.
According to an aspect of the present invention, there is provided a method for implementing probe position adjustment by using the probe card of any one of the above embodiments, the method including: adjusting the current input to the chilling plate to change the temperature of the chilling plate; determining the length of a corresponding support according to the temperature of the refrigeration wafer so as to adjust the distance between two corresponding adjacent probe seats; and correcting the probe positions in the two corresponding adjacent probe bases according to the adjusted distance between the two adjacent probe bases so as to meet the test of the target measurement area on the wafer to be tested.
In an exemplary embodiment of the present invention, adjusting the magnitude of the current input to the chilling wafer to change the temperature of the chilling wafer comprises: if the target environment temperature of the wafer to be tested is higher than the environment temperature of the wafer in the last test, inputting negative electric current to the refrigerating chip to increase the temperature of the refrigerating chip; if the target environment temperature of the wafer to be tested is lower than the environment temperature of the wafer in the last test, positive electric current is input to the refrigerating chip so as to reduce the temperature of the refrigerating chip.
In an exemplary embodiment of the present invention, a plurality of cooling wafers are disposed in the probe card and are respectively connected to the corresponding supports; the method further comprises the following steps: the current input to each chilling plate is independently controlled.
In an exemplary embodiment of the invention, the probe card comprises a central area and an edge area, the edge area comprises a first area close to the central area and a second area far away from the central area, the first area and the second area respectively comprise a plurality of sub-areas, and at least one refrigerating wafer and a corresponding support are respectively arranged in each sub-area; adjusting the magnitude of current input to a chilling wafer to change the temperature of the chilling wafer, comprising: inputting a current of a first current value to the refrigeration wafers in each sub-area of the first area; inputting a second current value to the cooling wafers in each sub-area of the second area; the first current value is less than the second current value.
In an exemplary embodiment of the present invention, determining the length of the corresponding holder according to the temperature of the chilling wafer to adjust the distance between the corresponding two adjacent probe holders includes: determining the length of the corresponding support according to the temperature of the refrigeration wafer, and generating stress for pushing the support to two corresponding adjacent probe seats; and controlling the displacement between the two corresponding adjacent probe seats according to the stress so as to adjust the distance between the two corresponding adjacent probe seats.
In an exemplary embodiment of the present invention, modifying probe positions in two adjacent probe holders according to an adjusted distance between the two adjacent probe holders to meet a test of a target measurement area on a wafer to be tested includes: if the trace of the probe in the probe seat after contacting the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the probe positions in the two corresponding adjacent probe seats; and if at least part of the trace of the probes in the probe seats after contacting the target measuring area is positioned outside the corresponding target measuring area, continuously correcting the positions of the probes in the corresponding two adjacent probe seats.
In an exemplary embodiment of the present invention, adjusting the magnitude of the current input to the chill plate comprises: the magnitude of the current input to the chilling wafer is controlled by a tester.
The probe card and the method for realizing the probe position adjustment by using the probe card provided by some embodiments of the invention can change the current input to the refrigerating chip according to the environmental temperature change when the wafer to be tested is tested by arranging the bracket between at least two adjacent probe seats and arranging the refrigerating chip connected with the corresponding bracket, thereby automatically adjusting the distance between the corresponding two adjacent probe seats to realize the correction of the probe position between the probes in the corresponding two adjacent probe seats, thereby improving the alignment accuracy between the probes and a measuring area, improving the test success rate of the wafer to be tested, reducing the wear rate of the probes on the probe card, prolonging the service life of the probe card, and reducing the cost for purchasing the probe card suitable for different temperatures caused by the test environmental temperature change in the prior art, and reduces the time cost of calibrating a newly exchanged probe card in the prior art.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of preferred embodiments of the invention, when considered in conjunction with the accompanying drawings. The drawings are merely exemplary of the invention and are not necessarily drawn to scale. In the drawings, like reference characters designate the same or similar parts throughout the different views. Wherein:
FIG. 1 is a schematic diagram illustrating a structure of a probe card according to an embodiment of the present invention;
FIG. 2 is a top view illustrating a probe card according to an embodiment of the present invention;
FIG. 3 is a top view illustrating another probe card according to an embodiment of the present invention;
FIG. 4 is a plan view illustrating still another probe card according to an embodiment of the present invention;
FIG. 5 is a plan view illustrating still another probe card according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing the construction of a holder and chill wafer according to an embodiment of the present invention;
FIG. 7 is a schematic diagram showing the construction of another holder and chill wafer according to an embodiment of the invention;
FIG. 8 is a flow chart illustrating a method of implementing probe position adjustment using a probe card in accordance with an embodiment of the present invention;
FIG. 9 is a schematic diagram showing traces of a probe after contact with a target measurement area according to an embodiment of the present invention;
fig. 10 is a schematic diagram showing a normal trace and a trace requiring further displacement according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments that embody features and advantages of the invention are described in detail below. It is to be understood that the invention is capable of other and different embodiments and its several details are capable of modification without departing from the scope of the invention, and that the description and drawings are accordingly to be regarded as illustrative in nature and not as restrictive.
In the following description of various exemplary embodiments of the invention, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration various exemplary structures, systems, and steps in which aspects of the invention may be practiced. It is to be understood that other specific arrangements of parts, structures, example devices, systems, and steps may be utilized and structural and functional modifications may be made without departing from the scope of the present invention.
Fig. 1 is a schematic view illustrating a structure of a probe card according to an embodiment of the present invention.
As shown in fig. 1, a probe card 100 according to an embodiment of the invention may include a plurality of probe holders (for example, the probe holders 111, 112, 113, 114, 115, and 116 are shown in the drawings, and six probe holders are taken as an example for illustration, but the invention is not limited thereto). Wherein each probe seat is provided with at least one probe 140.
In the embodiment of the present invention, the number of probe seats and the distribution of each probe seat included in the probe card 100 may be designed according to the number and the distribution of the to-be-tested chips on the to-be-tested wafer and the target measurement area of each to-be-tested chip (for example, the to-be-tested pads on each to-be-tested chip), which is not limited in the present invention.
It should be noted that, in the embodiment shown in fig. 1, an example is given by taking an example that each probe holder includes 11 probes, and the two adjacent probes in the same probe holder are at equal intervals, but in practical cases, the number of probes and the probe intervals included in each probe holder are not limited, the number of probes in each probe holder may be the same or different, and the intervals between two adjacent probes in each probe holder may be at equal intervals or at unequal intervals, which may be designed according to specific application scenarios.
Among the probe holders of the probe card 100, at least two adjacent probe holders are provided with a support therebetween, and the support may be used to adjust a distance between the two corresponding adjacent probe holders, so as to meet a test of a target measurement area on a wafer to be tested.
With continued reference to fig. 1, a support 121 can be disposed between the probe mount 111 and the adjacent probe mount 112, a support 122 can be disposed between the probe mount 113 and the adjacent probe mount 114, and a support 123 can be disposed between the probe mount 115 and the adjacent probe mount 116.
Further, the probe card 100 may further include a chilling wafer connected to the corresponding holder, and the chilling wafer may be used to change the length of the corresponding holder, thereby performing a function of adjusting the distance between the corresponding two adjacent probe holders.
In the embodiment of the invention, the refrigerating wafer can also be called a semiconductor refrigerating sheet, also called a thermoelectric refrigerating sheet. Its advantages are no slide part, and no pollution of refrigerant. The refrigerating wafer utilizes the Peltier effect of semiconductor materials, when direct current passes through a couple formed by connecting two different semiconductor materials in series, heat can be absorbed and released at two ends of the couple respectively, and the aim of refrigerating can be achieved. The refrigerating chip is a refrigerating technology for generating negative thermal resistance, and is characterized by no moving parts and high reliability.
For example, a chilling wafer of type TEC1-127.06-200C-Y-0.02-150 may be used, with the corresponding specification code as follows: TE C1-127.06-125 ℃ -N-0.10-150, wherein "TE" represents the refrigeration wafer code number, "C" represents the ceramic panel (if "S", it represents the mini-wafer), "1" represents the level as one layer (if 2, it represents the level as two layers, if 3, it represents the level as three layers), "127" represents the total logarithm of the P-type and N-type of the crystal grains, "06" represents the maximum operating current (in a), "125" represents the maximum operating temperature (other values may be, for example, 150 or 200), "N" represents the absence of moisture-proof seal, if "Y" represents the presence of moisture-proof seal, "0.10" represents the thickness tolerance of 0.10mm, other values may be, for example, 0.09mm, 0.08mm, 0.07mm, 0.06mm, 0.05mm, 0.04mm, 0.03mm, 0.02mm, etc., and "150" represents the wire length, in mm.
In the embodiment shown in fig. 1, the chilling wafers 131, 132, 133 are illustrated as examples. Specifically, the cooling chip 131 is connected to the support 121, and may be used to change the length of the support 121, so as to adjust the distance between the probe seat 111 and the probe seat 112 adjacent to each other, thereby correcting the probe positions of the probes in the probe seat 111 and the probe seat 112, so that the probes in the probe seat 111 and the probe seat 112 can be aligned with the target measurement area on the wafer to be tested more accurately.
Similarly, the chilling plate 132 is connected to the support 122, and can be used to change the length of the support 122, so as to adjust the distance between the probe seat 113 and the probe seat 114, and thus correct the probe positions of the probes in the probe seat 113 and the probe seat 114, so that the probes in the probe seat 113 and the probe seat 114 can be aligned with the target measurement area on the wafer to be tested more accurately.
The chilling plate 133 is connected to the support 123, and may be used to change the length of the support 123, so as to adjust the distance between the probe seat 115 and the probe seat 116, and thus correct the probe positions of the probes in the probe seat 115 and the probe seat 116, so that the probes in the probe seat 115 and the probe seat 116 can be aligned with the target measurement area on the wafer to be tested more accurately.
In the embodiment of the present invention, each of the chilling plates is electrically connected to the testing machine 200, so as to change the temperature of the corresponding chilling plate according to the current input to the chilling plate by the testing machine 200, thereby realizing the function of changing the length of the corresponding support.
The present invention is not limited to supplying current to each of the cooling chips by the test machine 200, and may supply current to each of the cooling chips through any other power supply unit.
With continued reference to the embodiment shown in FIG. 1, the chilling plate 131, the chilling plate 132, and the chilling plate 133 are electrically connected to the tester 200, respectively, and the tester 200 inputs currents to the chilling plate 131, the chilling plate 132, and the chilling plate 133, respectively.
In the embodiment shown in FIG. 1, it is assumed that the tester 200 inputs I1 to the chilling wafer 131, I2 to the chilling wafer 132, and I3 to the chilling wafer 133.
In some embodiments, the tester 200 can independently control the amount of current input into each of the chilling plates, and can control the amount of current input according to the displacement that needs to be adjusted between two adjacent probe mounts, for example, the current levels of the above-mentioned currents I1, I2, and I3 can be different.
In other embodiments, the testing machine 200 may also control the current input to at least a portion of the cooled wafers to be the same, which is not limited by the invention. The current control strategy can be correspondingly adjusted and set according to the specific situation of the wafer to be tested.
In the embodiment of the invention, the position of the probe on the probe card can be adjusted through electrical property. The tester controls the temperature of the refrigerating chip through the magnitude of the output current, thereby influencing the length of the probe seat bracket, generating the stress of the bracket pushing two adjacent probe seats connected with the bracket, and correcting the positions of the probes in the two adjacent probe seats by utilizing the stress.
In an exemplary embodiment, the radius size of the probe card 100 may be equal to or greater than a first threshold value.
In an exemplary embodiment, the first threshold may be 12 inches.
In the embodiment of the present invention, the probe card 100 may be a probe card for testing a large wafer, and the size of the wafer is generally 8 inches, 10 inches, 12 inches, 14 inches, 16 inches, etc., where the wafer larger than or equal to 12 inches may be a large wafer, and the wafer smaller than 12 inches may be a small wafer, but the present invention is not limited thereto, and the value of the first threshold may be adjusted according to a specific application scenario.
In the embodiment of the present invention, the thermal expansion coefficients of the probe card 100 and the wafer to be tested may be different.
The probe card and the method for realizing the probe position adjustment by using the probe card provided by some embodiments of the invention can change the current input to the refrigerating chip according to the environmental temperature change when the wafer to be tested is tested by arranging the bracket between at least two adjacent probe seats and arranging the refrigerating chip connected with the corresponding bracket, thereby automatically adjusting the distance between the corresponding two adjacent probe seats to realize the correction of the probe position between the probes in the corresponding two adjacent probe seats, thereby improving the alignment accuracy between the probes and a measuring area, improving the test success rate of the wafer to be tested, reducing the wear rate of the probes on the probe card, prolonging the service life of the probe card, and reducing the cost for purchasing the probe card suitable for different temperatures caused by the test environmental temperature change in the prior art, and reduces the time cost of calibrating a newly exchanged probe card in the prior art.
In the embodiment of the invention, the refrigeration chip can be embedded and installed in the probe card subarea, and the refrigeration chip is connected to the bracket beside the probe seat. The tester controls the temperature of the cooling chip to influence the length of the probe seat bracket during the test process, and generates the stress of the bracket pushing the probe seat, and the stress is used for correcting the position of the probe.
Fig. 2 is a plan view illustrating a probe card according to an embodiment of the present invention.
As shown in fig. 2, probe card 100 may include a center region and a rim region to which the chilling wafers and corresponding supports may be disposed. In practice, the situation that the probe cannot be accurately contacted with the target measurement area occurs in the edge area of the wafer to be tested, and therefore, the embodiment of the present invention proposes to mount the cooling chip on the edge area of the probe card, but the present invention is not limited thereto.
In the embodiment shown in fig. 2, the probe card 100 is illustrated as having a square top view, but the invention is not limited thereto, and the probe card 100 may have any suitable shape and may be designed according to the shape of the wafer to be tested.
Fig. 3 is a plan view illustrating another probe card according to an embodiment of the present invention.
The probe card 100 provided by the embodiment of the invention is different from the embodiment shown in fig. 2 in that the edge region may further include a first region close to the central region and a second region far from the central region. Wherein the first region and the second region may include a plurality of sub-regions, respectively; at least one chill wafer and a corresponding holder can be arranged in each subregion.
As shown in fig. 3, the first region may include a sub-region 301, a sub-region 302, a sub-region 303, and a sub-region 304. The second region may include sub-region 305, sub-region 306, sub-region 307, and sub-region 308.
It should be noted that, in the embodiment shown in fig. 3, the sub-regions in the first region and the second region are symmetrically and equally divided, but the present invention is not limited thereto, and the division and distribution of the regions and the sub-regions may be designed according to the specific situation of the wafer to be tested.
Fig. 4 is a plan view illustrating still another probe card according to an embodiment of the present invention.
The difference from the above-described embodiments of fig. 2 and 3 is that the probe card 100 of the embodiment of fig. 4 may have a disk shape. Since a typical wafer is circular, the probe card 100 can be adaptively designed to have a disk shape.
As shown in fig. 4, the probe card 100 may include a center region and an edge region. Wherein the rim region may include a first annular region proximate to the central region and a second annular region distal to the central region.
The first annular region may include first to fourth sector regions, such as a first sector region 401, a second sector region 402, a third sector region 403, and a fourth sector region 404.
The second annular region may include fifth to eighth sector regions, such as a fifth sector region 405, a sixth sector region 406, a seventh sector region 407, and an eighth sector region 408.
Wherein at least one chill plate and a corresponding holder can be arranged in each sector.
In the above embodiments, the edge region of the probe card may be divided into a first region close to the central region and a second region far from the central region, or a first annular region close to the central region and a second annular region far from the central region, but the invention is not limited thereto, and the edge region may be specifically divided according to a distribution structure of PADs (PADs) of chips to be tested on a wafer to be tested. Fig. 5 is a plan view illustrating still another probe card according to an embodiment of the present invention.
In the embodiment shown in fig. 5, the edge region of the probe card 100 may be divided into a first annular region near the central region, a third annular region far from the central region, and a second annular region between the first annular region and the third annular region.
For example, the first annular region may include a first sector-shaped region 501, a second sector-shaped region 502, a third sector-shaped region 503, and a fourth sector-shaped region 504 in the illustration. The second annular region may include a fifth sector area 505, a sixth sector area 506, a seventh sector area 507, and an eighth sector area 508 in the illustration. The third annular region may include a ninth sector area 509, a tenth sector area 510, an eleventh sector area 511, and a twelfth sector area 512 in the illustration.
Wherein at least one chill plate and a corresponding holder can be arranged in each sector.
In an exemplary embodiment, the holder may be a cylinder or a rectangular parallelepiped. However, the present invention is not limited thereto, and the support may be designed in any suitable shape as long as it can perform the function of adjusting the distance between two adjacent probe holders connected thereto.
In an exemplary embodiment, the chilling plates may be disposed on or at least partially embedded in the respective brackets, respectively. However, the present invention is not limited to this, and in the embodiment of the present invention, as long as the temperature of the chilling wafers can be conducted to the corresponding holders, the positional relationship and the shape structure between the chilling wafers and the holders are not particularly limited.
FIG. 6 is a schematic diagram showing the structure of a holder and a chill wafer, according to an embodiment of the invention.
As shown in fig. 6, the frame 601 in the embodiment of the present invention may be a rectangular parallelepiped, and the chilling wafer 602 may also be a rectangular parallelepiped, and the chilling wafer 602 may be partially embedded in the frame 601.
FIG. 7 is a schematic diagram showing the construction of another holder and chill wafer according to an embodiment of the invention.
As shown in fig. 7, the holder 701 according to the embodiment of the present invention may be a cylinder, and the chilling wafer 702 may also be a cylinder, and the chilling wafer 702 may be completely embedded in the holder 701.
In an exemplary embodiment, the support may be composed of a metal material having a predetermined linear thermal expansion coefficient at a predetermined temperature.
In the embodiment of the invention, the material of the bracket beside the probe seat can be metal, such as aluminum, copper and the like. Wherein the linear thermal expansion coefficients of the respective metals at 20 deg.C (units of 1E-6/K or 1E-6/. degree. C.) are as described in Table 1 below.
TABLE 1
| Name of metal | Symbol of element | Coefficient of linear thermal expansion |
| Beryllium (beryllium) | Be | 12.3 |
| Antimony (Sb) | Sb | 10.5 |
| Copper (Cu) | Cu | 17.5 |
| Chromium (III) | Cr | 6.2 |
| Germanium (Ge) | Ge | 6.0 |
| Iridium (III) | Ir | 6.5 |
| Manganese oxide | Mn | 23.0 |
| Nickel (II) | Ni | 13.0 |
| Silver (Ag) | Ag | 19.5 |
| Aluminium | Al | 23.2 |
| Lead (II) | Pb | 29.3 |
| Cadmium (Cd) | Cd | 41.0 |
| Iron | Fe | 12.2 |
| Gold (Au) | Au | 14.2 |
| Magnesium alloy | Mg | 26.0 |
| Molybdenum (Mo) | Mo | 5.0 |
| Platinum (II) | Pt | 9.0 |
| Tin (Sn) | Sn | 2.0 |
In the embodiment of the invention, different displacement parameters can be formed under the same test environment temperature by utilizing different linear thermal expansion coefficients of all metal materials, for example, the linear thermal expansion coefficient of aluminum is higher than that of copper, and the displacement amplitude is larger; the linear thermal expansion coefficient of copper is lower, and the corresponding amplitude of displacement is less, and consequently the scope of can adjusting and control is more accurate, consequently, can use different materials according to different probe card demands, can realize the high customization of probe card.
Fig. 8 is a flowchart illustrating a method of implementing probe position adjustment using a probe card according to an embodiment of the present invention.
As shown in fig. 8, a method for implementing probe position adjustment by using a probe card according to an embodiment of the present invention may include the following steps. The probe card may be as described above with reference to the embodiments of fig. 1-7.
In step S810, the current input to the chilling plate is adjusted to change the temperature of the chilling plate.
In an exemplary embodiment, adjusting the magnitude of the current input to the chilling plates to change the temperature of the chilling plates may include: if the target environment temperature of the wafer to be tested is higher than the environment temperature of the wafer in the last test, inputting negative electric current to the refrigerating chip to increase the temperature of the refrigerating chip; if the target environment temperature of the wafer to be tested is lower than the environment temperature of the wafer in the last test, positive electric current is input to the refrigerating chip so as to reduce the temperature of the refrigerating chip.
For example, if the set ambient temperature is-40 ℃ in the last cycle of wafer testing and the required target ambient temperature is 100 ℃ in the cycle of wafer testing, then negative electric current can be input to the refrigerating wafer to raise the temperature of the refrigerating wafer, so that the length of the corresponding support can be stretched, and the distance between two adjacent probe seats connected with the support is lengthened.
For another example, if the set ambient temperature is 100 ℃ in the last cycle of wafer testing and the required target ambient temperature is-40 ℃ in the cycle of wafer testing, then positive electric current can be input to the refrigerating wafer to reduce the temperature of the refrigerating wafer, so that the length of the corresponding support can be shortened, and the distance between two adjacent probe seats connected with the support is shortened.
In an exemplary embodiment, a plurality of chilling wafers are disposed in the probe card, each coupled to a corresponding holder. The method may further comprise: the current input to each chilling plate is independently controlled.
In an exemplary embodiment, the probe card may include a center region and an edge region, the edge region may include a first region close to the center region and a second region far from the center region, the first region and the second region may respectively include a plurality of sub-regions, and at least one chilling wafer and a corresponding holder may be respectively disposed in each of the sub-regions. Wherein the adjusting the magnitude of the current input to the chilling wafer to change the temperature of the chilling wafer may include: inputting a current of a first current value to the refrigeration wafers in each sub-area of the first area; inputting a second current value to the chilling wafers in each sub-region of the second region.
Taking the embodiment shown in FIG. 3 as an example, the same first current value can be inputted into each of the sub-zones in the first region, i.e. each of the cooling wafers in the sub-zones 301-304, so as to control each of the cooling wafers in the sub-zones 301-304 to have the same temperature, because the distances between the sub-zones 301-304 and the central region are equal, and generally, the influence degrees of the probes in the probe holders on the thermal expansion and the cold contraction are similar, therefore, the cooling wafers in the same region can be set to the same current magnitude, so as to reduce the control complexity of the output current magnitude of the tester. However, the present invention is not limited to this, and the refrigeration wafers in the respective sub-areas in the same area may be controlled individually.
In an exemplary embodiment, the first current value is less than the second current value.
Also as illustrated in fig. 3, since the second region is far from the central region, the probes in the second region are affected by expansion and contraction to a greater extent than the probes in the first region, and therefore, the refrigerating chip in the second region can be input with a larger second current value to control the temperature change.
In step S820, the length of the corresponding support is determined according to the temperature of the chilling wafer, so as to adjust the distance between two adjacent probe bases.
In an exemplary embodiment, determining the length of the corresponding support according to the temperature of the chilling wafer to adjust the spacing between the corresponding two adjacent probe mounts may include: determining the length of the corresponding support according to the temperature of the refrigeration wafer, and generating stress for pushing the support to two corresponding adjacent probe seats; and controlling the displacement between the two corresponding adjacent probe seats according to the stress so as to adjust the distance between the two corresponding adjacent probe seats.
In step S830, the probe positions in the two adjacent probe holders are corrected according to the adjusted distance between the two adjacent probe holders, so as to satisfy the test of the target measurement area on the wafer to be tested.
In an exemplary embodiment, correcting the probe positions in two adjacent probe holders according to the adjusted distance between the two adjacent probe holders to meet the test of the target measurement area on the wafer to be tested may include: if the trace of the probe in the probe seat after contacting the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the probe positions in the two corresponding adjacent probe seats; and if at least part of the trace of the probes in the probe seats after contacting the target measuring area is positioned outside the corresponding target measuring area, continuously correcting the positions of the probes in the corresponding two adjacent probe seats. See in particular the description of fig. 9 and 10 below.
In an exemplary embodiment, the method may further include: and controlling the target environment temperature to be in a constant state in the testing process of the wafer to be tested. For example, it is maintained at 20 ℃ throughout the test.
In an exemplary embodiment, adjusting the magnitude of the current input to the chilling plates may include: the magnitude of the current input to the chilling wafer is controlled by a tester.
In the embodiment of the invention, the tester can control the magnitude of the current output, the temperature of the refrigeration chip is determined by the magnitude of the current, and the length of the corresponding support is determined by the temperature of the refrigeration chip.
Fig. 9 is a schematic diagram illustrating a trace after a probe according to an embodiment of the present invention is contacted with a target measuring region.
As shown in fig. 9, the target measurement region 901 is assumed to be a pad to be tested of a chip to be tested on a wafer to be tested, and if the size of the pad to be tested is 50 μm × 40 μm, the whole surface size region of the pad to be tested is the target measurement region, and by using the method provided by the embodiment of the present invention, it can be seen that traces 902 after the probe contacts the target measurement region are all located within the pad to be tested, even at the approximate center point of the pad to be tested.
In the embodiment of the invention, a signal can be sent by a workstation computer of the testing machine, the testing machine provides stable current to be sent into the refrigerating chip, the displacement of the probes in each area is controlled, and then whether the displacement is enough or not is judged by traces after the probes contact with the target measuring area.
Fig. 10 is a schematic diagram showing a normal trace and a trace requiring further displacement according to an embodiment of the present invention.
As shown in fig. 10, when the trace 1002 of the probe after contact with the target measurement region 1001 is found to be completely within the target measurement region 1001, it can be determined as a normal trace. On the other hand, if the trace 1004 after the probe has contacted the target measurement region 1003 is found to be at least partially outside the target measurement region 1004, it can be determined that the trace of the displacement needs to be further adjusted.
The probe card and the method for adjusting the position of the probe by using the probe card provided by the embodiment of the invention are used for solving the problem that the probe card of a large wafer in the prior art can not accurately contact with a measurement area on the wafer along with the expansion and contraction of the temperature, the support and the refrigeration wafer are additionally arranged on the probe card, the temperature change of the refrigeration wafer is controlled along with the change of the current, so that the support expands with heat and contracts with cold along with the temperature change of the refrigeration wafer, the probe seat is displaced according to the change of the expansion caused by heat and the contraction caused by cold of the bracket, thereby finally realizing the purpose of correcting the position of the probe, the scheme can be applied to the phenomenon that the probe cannot accurately contact a measuring area due to different thermal expansion coefficients of the probe card and the wafer, the cost for purchasing the probe card suitable for different temperatures is saved, and the time for exchanging and adjusting the probe card is also saved.
Exemplary embodiments of a probe card and a method for implementing probe position adjustment using the probe card according to the present invention are described and/or illustrated in detail above. Embodiments of the invention are not limited to the specific embodiments described herein, but rather, components and/or steps of each embodiment may be utilized independently and separately from other components and/or steps described herein. Each component and/or step of one embodiment can also be used in combination with other components and/or steps of other embodiments. When introducing elements/components/etc. described and/or illustrated herein, the articles "a," "an," and "the" are intended to mean that there are one or more of the elements/components/etc. The terms "comprising," "including," and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc. Furthermore, the terms "first" and "second" and the like in the claims and the description are used merely as labels, and are not numerical limitations of their objects.
Although the test method, test apparatus, test carrier board and test system of the present invention have been described in terms of various specific embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and scope of the claims.
Claims (16)
1. A probe card, comprising:
the probe comprises a plurality of probe seats, wherein at least one probe is arranged in each probe seat; wherein the content of the first and second substances,
a bracket is arranged between at least two adjacent probe bases and is used for adjusting the distance between the corresponding two adjacent probe bases so as to meet the test of a target measurement area on a wafer to be tested;
and the refrigerating wafer is connected with the corresponding bracket and used for changing the length of the corresponding bracket.
2. The probe card of claim 1, wherein the probe card comprises a center region and a rim region, the chilling wafers and corresponding supports being disposed in the rim region.
3. The probe card of claim 2, wherein the edge region includes a first region proximate to the central region and a second region distal to the central region; wherein the content of the first and second substances,
the first region and the second region respectively comprise a plurality of sub-regions;
at least one chill wafer and a corresponding holder are respectively arranged in each subregion.
4. The probe card of claim 2, wherein the probe card is disc-shaped, the edge region including a first annular region proximate the central region and a second annular region distal from the central region; wherein the content of the first and second substances,
the first annular region includes first to fourth sector regions;
the second annular region includes fifth to eighth sector regions;
at least one chill plate and a corresponding holder are respectively arranged in each sector.
5. The probe card of claim 1 wherein the holder is comprised of a metallic material having a predetermined coefficient of linear thermal expansion at a predetermined temperature.
6. The probe card of claim 1, wherein the holder is a cylinder or a cuboid.
7. The probe card of claim 1, wherein the chilling wafers are respectively disposed on or at least partially embedded in the respective supports.
8. The probe card of claim 1, wherein each of the chilling plates is electrically connected to the tester, so as to change the temperature of the corresponding chilling plate according to the magnitude of the current input to the chilling plate by the tester, thereby changing the length of the corresponding support.
9. The probe card of claim 1 wherein the probe card has a different coefficient of thermal expansion than the wafer to be tested.
10. A method for implementing probe position adjustment using the probe card according to any one of claims 1 to 9, the method comprising:
adjusting the current input to the chilling plate to change the temperature of the chilling plate;
determining the length of a corresponding support according to the temperature of the refrigeration wafer so as to adjust the distance between two corresponding adjacent probe seats;
and correcting the probe positions in the two corresponding adjacent probe bases according to the adjusted distance between the two adjacent probe bases so as to meet the test of the target measurement area on the wafer to be tested.
11. The method of claim 10, wherein adjusting the magnitude of the current input to the chilling wafer to change the temperature of the chilling wafer comprises:
if the target environment temperature of the wafer to be tested is higher than the environment temperature of the wafer in the last test, inputting negative electric current to the refrigerating chip to increase the temperature of the refrigerating chip;
if the target environment temperature of the wafer to be tested is lower than the environment temperature of the wafer in the last test, positive electric current is input to the refrigerating chip so as to reduce the temperature of the refrigerating chip.
12. The method of claim 10, wherein the probe card has a plurality of cooling wafers disposed therein, each cooling wafer being connected to a corresponding holder; the method further comprises the following steps:
the current input to each chilling plate is independently controlled.
13. The method of claim 10 wherein said probe card comprises a center region and a rim region, said rim region comprising a first region proximate said center region and a second region distal from said center region, said first region and said second region each comprising a plurality of sub-regions, each of said sub-regions having at least one chilling wafer and a corresponding holder disposed therein; adjusting the magnitude of current input to a chilling wafer to change the temperature of the chilling wafer, comprising:
inputting a current of a first current value to the refrigeration wafers in each sub-area of the first area;
inputting a second current value to the cooling wafers in each sub-area of the second area;
the first current value is less than the second current value.
14. The method of claim 10, wherein determining the length of the respective support to adjust the spacing between the respective two adjacent probe mounts based on the temperature of the chill wafer comprises:
determining the length of the corresponding support according to the temperature of the refrigeration wafer, and generating stress for pushing the support to two corresponding adjacent probe seats;
and controlling the displacement between the two corresponding adjacent probe seats according to the stress so as to adjust the distance between the two corresponding adjacent probe seats.
15. The method of claim 10, wherein modifying the probe positions in two adjacent probe holders according to the adjusted spacing between the two adjacent probe holders to satisfy the test of the target measurement area on the wafer to be tested comprises:
if the trace of the probe in the probe seat after contacting the target measuring area is completely positioned in the corresponding target measuring area, stopping correcting the probe positions in the two corresponding adjacent probe seats;
and if at least part of the trace of the probes in the probe seats after contacting the target measuring area is positioned outside the corresponding target measuring area, continuously correcting the positions of the probes in the corresponding two adjacent probe seats.
16. The method of claim 10, wherein adjusting the amount of current input to the chill plate comprises:
the magnitude of the current input to the chilling wafer is controlled by a tester.
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| CN115308457A (en) * | 2022-06-30 | 2022-11-08 | 上海泽丰半导体科技有限公司 | Probe card manufacturing method for high and low temperature test and probe card |
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