CN110954246B - Time domain calibration method for dynamic temperature measurement - Google Patents

Time domain calibration method for dynamic temperature measurement Download PDF

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CN110954246B
CN110954246B CN201911198078.8A CN201911198078A CN110954246B CN 110954246 B CN110954246 B CN 110954246B CN 201911198078 A CN201911198078 A CN 201911198078A CN 110954246 B CN110954246 B CN 110954246B
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CN110954246A (en
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徐磊
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Nanjing Huizhi Lanxin Technology Co ltd
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Nanjing Ruiyi Electronic Technology Co Ltd
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    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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    • G01K15/005—Calibration

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Abstract

The invention discloses a double-couple temperature measuring device and a time domain calibration method for dynamic temperature measurement, which comprise an energy supply unit, a sampling processing unit, a data processing unit and a data transmission unit, and are characterized in that the sampling processing unit also comprises a temperature measuring circuit; the energy supply unit supplies power to other units in an optimized management mode, the sampling processing unit collects data of temperature measurement and supplements dynamic temperature, then the measured data are transmitted to the data processing unit for data storage and further transmission, and finally the data transmission unit wirelessly transmits and exchanges node data through a radio frequency medium. The invention realizes the dynamic calibration of thermocouple temperature measurement, avoids the problem of secondary measurement of a measured field and ensures the integrity of temperature measurement data.

Description

Time domain calibration method for dynamic temperature measurement
This patent is the divisional application, and the information of former application is as follows, the name: a dual-couple temperature measurement device, application No. 201910144982.4, filing date: 2019-02-27.
Technical Field
The invention relates to a temperature measuring technology, in particular to a double-electric-couple temperature measuring device.
Background
With the continuous development of the industrial production level, the temperature measurement technology is also becoming an important index of the technical level. Whether the common production in industry and agriculture, the field of national defense and aerospace which needs to accurately control the temperature, the accurate understanding of the temperature measurement value is more and more necessary.
In actual production and scientific research, more attention is paid to measurement and numerical processing of dynamic temperature. Because many temperature fields are in a severe measurement environment, if the dynamic temperature cannot be measured accurately in real time, damage to production equipment caused by the temperature is likely to occur, and even huge economic loss and casualties are caused. Therefore, a measurement study of the dynamic temperature is necessary.
Thermocouples have been favored as important devices in temperature measurement because of their high accuracy. However, in the measurement of dynamic temperature, it is difficult to directly and accurately measure the dynamic temperature at one time due to the fixity of the device. Meanwhile, due to the simple structure, the interference generated by the thermocouple measuring circuit or the measured field may greatly affect the measuring process of the thermocouple, which may further result in low accuracy of thermocouple measurement and reliability of measured values.
In order to better accomplish accurate measurement of dynamic temperature, further improvement and algorithmic research on conventional thermocouple measuring devices is required to accomplish more accurate and complete temperature measurement.
Disclosure of Invention
The purpose of the invention is as follows: a dual-couple temperature measuring device is provided to solve the above problems.
The technical scheme is as follows: a dual-couple temperature measuring device comprises an energy supply unit, a sampling processing unit, a data processing unit and a data transmission unit, wherein the sampling processing unit also comprises a temperature measuring circuit;
the energy supply unit can be mainly divided into a power supply module and an energy management module, the current of the power supply is controlled through the energy management module, reasonable energy support is provided for the operation of the whole device, the energy management module carries out optimized management on the electricity usage of the power supply, and the maximum possible economic effect is realized;
the sampling processing unit is used for measuring the temperature of a measured field in real time by arranging a temperature measuring circuit and carrying out analog-to-electrical conversion on measured data by an A/D conversion module so as to finish sampling work and provide data for subsequent data processing;
the data processing unit is mainly used for carrying out preliminary data on the data by using a microprocessor with lower power in order to reduce the cost, and carrying out necessary transmission and storage work on the required data under the management of a master control end;
the data transmission unit realizes wireless transmission and exchange of data between nodes and mainly uses three transmission media of radio frequency, ultrasonic waves or light waves;
a temperature measuring circuit, including a thermocouple TC1, a thermocouple TC2, an operational amplifier U1, an operational amplifier U2, an operational amplifier U3, an integrated chip U4, an integrated chip U5, an inductor L1, an inductor L2, an inductor L3, a capacitor C3, a MOS transistor M3, a transistor Q3, a diode D3, a resistor R3, a buzzer BUZ 3, a switch SW 3, and a switch SW 3, wherein one end of the inductor L3 is connected to a first terminal of the integrated chip U3, and a negative terminal of the inductor L3 is connected to a second terminal of the integrated chip U3, and a negative terminal of the diode D3 is connected to a negative terminal of the integrated chip U3, and a negative terminal of the diode D3, and a negative terminal of the diode 3 is connected to a negative terminal of the integrated chip 3, a third pin of the integrated chip U4 is disconnected from a sixth pin of the integrated chip U4, a ninth pin of the integrated chip U4 and an eleventh pin of the integrated chip U4, a fourth pin of the integrated chip U4 is connected to one end of the capacitor C3, the other end of the capacitor C3 is connected to a twelfth pin of the integrated chip U4 and one end of the resistor R10, a fifth pin of the integrated chip U4 is connected to a voltage signal VCC, a seventh pin of the integrated chip U4 is connected to one end of the switch SW2, an eighth pin of the integrated chip U4 is connected to one end of the inductor L2, a tenth pin of the integrated chip U4 is connected to one end of the resistor R6, the other end of the resistor R6 is grounded to the other end of the inductor L2, a fourteenth pin of the integrated chip U4 is connected to the negative electrode of the thermocouple TC1, the positive electrode of the thermocouple TC1 is connected to the third pin of the operational amplifier U1, the second pin of the operational amplifier U1 is connected to one end of the resistor R3, the fourth pin of the operational amplifier U1 and the seventh pin of the operational amplifier U1 are both open-circuit, the sixth pin of the operational amplifier U1 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the fifth pin of the integrated chip U5 and the G-pole of the MOS transistor M1, the seventh pin of the integrated chip U5 is connected to the other end of the resistor R10, the other end of the resistor R3 is connected to one end of the resistor R4 and one end of the capacitor C1, the other end of the resistor R4 is connected to the other end of the capacitor C1 and the S-pole of the MOS transistor M1, one end of the resistor R2 is connected to the D-pole of the MOS transistor M1, and the other end of the resistor R2 is connected to the sixth pin of the operational amplifier U2, a fourth pin of the operational amplifier U2 and a seventh pin of the operational amplifier U2 are both open-circuit, a third pin of the operational amplifier U2 is connected to one end of the resistor R5 and one end of the resistor R11, the other end of the resistor R5 is connected to one end of the capacitor C2, one end of the resistor R12 and a negative electrode of the thermocouple TC2, the other end of the capacitor C2 is grounded, a positive electrode of the thermocouple TC2 is connected to the other end of the switch SW1, the other end of the resistor R12 is connected to one end of the capacitor C5, the other end of the capacitor C5 is connected to an emitter of the transistor Q2, a base of the transistor Q2 is connected to the other end of the resistor R11, a collector of the transistor Q2 is connected to one end of the buzzer BUZ1, the other end of the buzzer BUZ1 is connected to the other end of the switch SW2, and a second pin of the operational amplifier U2 is connected to a positive electrode 2D 2, the cathode of the diode D2 is connected to one end of the inductor L4 and the emitter of the triode Q1, the collector of the triode Q1 is connected to one end of the resistor R9, the other end of the resistor R9 is grounded, the base of the triode Q1 is connected to one end of the inductor L3 and the second pin of the operational amplifier U3, the other end of the inductor L4 is connected to one end of the resistor R8, the other end of the resistor R8 is connected to the other end of the inductor L3, the fourth pin of the operational amplifier U3 and the seventh pin of the operational amplifier U3 are both open-circuit, the sixth pin of the operational amplifier U3 is connected to one end of the resistor R7, the other end of the resistor R7 is connected to the voltage signal VOUT and the sixth pin of the integrated chip U5, the third pin of the operational amplifier U3 is connected to the fourth pin of the integrated chip 5, the third pin of the integrated chip U5 is a broken circuit, the second pin of the integrated chip U5 is connected with the anode of the diode D3, the cathode of the diode D3 is connected with one end of the capacitor C4, the other end of the capacitor C4 is connected with the first pin of the integrated chip U5, and the eighth pin of the integrated chip U5 is connected with the voltage signal VCC.
According to one aspect of the invention, the thermocouple TC1 carries out continuous real-time temperature measurement on a measured field and transmits measurement data to the integrated chip U4, and by comparing the measurement data with the measurement data of the thermocouple TC2 on a closable branch, sudden temperature data are prevented from being lost, and comprehensive measurement of dynamic temperature is guaranteed.
According to one aspect of the present invention, the diode D1 is a zener diode, and is connected to the ic U4 to ensure a high resistance characteristic when a low voltage is stabilized, thereby protecting the measurement branch of the thermocouple TC2 from being damaged by a high voltage.
According to one aspect of the invention, the MOS transistor M1 utilizes its own electric field reversal characteristics through the temperature measurement branch connecting the thermocouple TC1 and the thermocouple TC2, and when the temperature conversion data of the two is within a safe range, the MOS transistor M1 stably accumulates positive charges on the G electrode, otherwise accumulates negative charges, thereby updating the temperature real-time measurement data.
According to one aspect of the invention, the model of the integrated chip U4 is AD734, and the model of the integrated chip U5 is AD584 KA.
According to one aspect of the invention, under the control of the triode Q2, when the current reaches the working point, the buzzer BUZ1 assumes that the measured temperature is too high and a potential safety hazard occurs, and gives an alarm.
A time domain calibration method for dynamic temperature measurement, comprising:
step 1, representing each data of temperature measurement in a Laplace form, wherein according to a representation mode of a dynamic system, an input quantity of the system is represented by a(s), an output quantity of the system is represented by b(s), a transfer function of the system is represented by H(s), an error quantity at an input end of the system is represented by d 1(s), an error quantity at an output end of the system is represented by d 2(s), and a system error is d 3(s);
step 2, establishing an error formula of temperature measurement and analyzing dynamically measured error data from the error formula;
step 21, according to the representation form of the dynamic system, the error formula of the temperature measurement can be further expressed as:
b（s）=H（s）[a(s)+d1(s)]+d2(s)+d3(s) （1）
step 22, because of the consistency of the error nature, the dynamic error and the static error can be understood as the difference between the measured value and the true value, but because the dynamic error contains randomness and dynamics, specific data processing needs to be carried out after the dynamic error is distinguished from the static error;
from equation 1, the transformation of the equation yields:
b（s）=H（s）a(s)+[H(s)d1(s)+d2(s)+d3(s)] (2)
since the value of the transient temperature of the temperature measurement is large, and the value of the static error is generally considered to be negligible in comparison, the system output value b 1(s) containing only the dynamic error can be directly expressed as:
b1（s）=H（s）a(s) (3)
step 23, establishing a model according to the transfer function can obtain:
H（s）=B（s）/A（s） （4）
the calculation mode of H(s) is the steady-state response of a sinusoidal input signal of a temperature measurement model in a frequency domain, and the calculation mode directly loses the calculation of temperature transient change, so that the data of temperature measurement is lost; in order not to affect the direct measurement of the system, and to increase the measured data of the transient temperature, the calculation of a(s) may be increased by a step function.
According to one aspect of the invention, the algorithm is used on the premise that temperature errors are mainly caused by dynamic errors, the specific detection can be based on adaptive phase-frequency data, whether the sensor distorts the input signal or not is analyzed, and if not, the method is applicable, otherwise, the method is not applicable.
According to one aspect of the invention, the step function needs to be calculated by means of a unit step signal u1 (t) in combination with the temperature measured transient temperature u2 (t).
Has the advantages that: the invention can solve the problem of loss of measurement data of transient temperature caused by measurement inertia and delay in the process of measuring dynamic temperature in the prior art, and continuous real-time temperature data and transient temperature measurement data are respectively measured through the dual-electric-couple temperature measurement branch, thereby enhancing the integrity and reliability of dynamic temperature measurement. Details will be described below.
Drawings
Fig. 1 is a block diagram of the present invention.
Fig. 2 is a schematic diagram of the temperature measurement circuit of the present invention.
FIG. 3 is a block diagram of the error calculation during thermometry in accordance with the present invention.
Fig. 4 is a graph of the spectrum of an ideal unit step function of the present invention.
Fig. 5 is a schematic diagram of the transient variation of the dynamic temperature of the present invention.
Detailed Description
As shown in fig. 1, in this embodiment, a dual-couple temperature measuring device includes an energy supply unit, a sampling processing unit, a data processing unit and a data transmission unit, wherein the sampling processing unit further includes a temperature measuring circuit;
the energy supply unit can be mainly divided into a power supply module and an energy management module, the current of the power supply is controlled through the energy management module, reasonable energy support is provided for the operation of the whole device, the energy management module carries out optimized management on the electricity usage of the power supply, and the maximum possible economic effect is realized;
the sampling processing unit is used for measuring the temperature of a measured field in real time by arranging a temperature measuring circuit and carrying out analog-to-electrical conversion on measured data by an A/D conversion module so as to finish sampling work and provide data for subsequent data processing;
the data processing unit is mainly used for carrying out preliminary data on the data by using a microprocessor with lower power in order to reduce the cost, and carrying out necessary transmission and storage work on the required data under the management of a master control end;
the data transmission unit realizes wireless transmission and exchange of data between nodes and mainly uses three transmission media of radio frequency, ultrasonic waves or light waves;
a temperature measuring circuit, as shown in fig. 2, including a thermocouple TC1, a thermocouple TC2, an operational amplifier U1, an operational amplifier U2, an operational amplifier U3, an integrated chip U4, an integrated chip U5, an inductor L1, an inductor L2, an inductor L3, an inductor L4, a capacitor C1, a capacitor C2, a capacitor C3, a MOS transistor M3, a transistor Q3, a diode D3, a resistor R3, a switch R3, a buzzer BUZ 3, a switch SW 3, and a switch SW 3, wherein one end of the inductor L3 is connected to a positive terminal of the first integrated chip U3, and a positive terminal of the integrated chip U3 is connected to a positive terminal of the second integrated chip U3, and a positive terminal of the diode L3 is connected to the positive terminal of the integrated chip U3, a cathode of the diode D1 is connected to one end of the switch SW1, a third pin of the integrated chip U4 is disconnected from a sixth pin of the integrated chip U4, a ninth pin of the integrated chip U4 and an eleventh pin of the integrated chip U4, a fourth pin of the integrated chip U4 is connected to one end of the capacitor C3, the other end of the capacitor C3 is connected to a twelfth pin of the integrated chip U4 and one end of the resistor R10, a fifth pin of the integrated chip U4 is connected to the voltage signal VCC, a seventh pin of the integrated chip U4 is connected to one end of the switch SW2, an eighth pin of the integrated chip U4 is connected to one end of the inductor L2, a tenth pin of the integrated chip U4 is connected to one end of the resistor R6, the other end of the resistor R6 is connected to the other end of the inductor L2, and a fourteenth pin of the integrated chip U4 is connected to a cathode of the thermocouple TC1, the positive electrode of the thermocouple TC1 is connected to the third pin of the operational amplifier U1, the second pin of the operational amplifier U1 is connected to one end of the resistor R3, the fourth pin of the operational amplifier U1 and the seventh pin of the operational amplifier U1 are both open-circuit, the sixth pin of the operational amplifier U1 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the fifth pin of the integrated chip U5 and the G-pole of the MOS transistor M1, the seventh pin of the integrated chip U5 is connected to the other end of the resistor R10, the other end of the resistor R3 is connected to one end of the resistor R4 and one end of the capacitor C1, the other end of the resistor R4 is connected to the other end of the capacitor C1 and the S-pole of the MOS transistor M1, one end of the resistor R2 is connected to the D-pole of the MOS transistor M1, and the other end of the resistor R2 is connected to the sixth pin of the operational amplifier U2, a fourth pin of the operational amplifier U2 and a seventh pin of the operational amplifier U2 are both open-circuit, a third pin of the operational amplifier U2 is connected to one end of the resistor R5 and one end of the resistor R11, the other end of the resistor R5 is connected to one end of the capacitor C2, one end of the resistor R12 and a negative electrode of the thermocouple TC2, the other end of the capacitor C2 is grounded, a positive electrode of the thermocouple TC2 is connected to the other end of the switch SW1, the other end of the resistor R12 is connected to one end of the capacitor C5, the other end of the capacitor C5 is connected to an emitter of the transistor Q2, a base of the transistor Q2 is connected to the other end of the resistor R11, a collector of the transistor Q2 is connected to one end of the buzzer BUZ1, the other end of the buzzer BUZ1 is connected to the other end of the switch SW2, and a second pin of the operational amplifier U2 is connected to a positive electrode 2D 2, the cathode of the diode D2 is connected to one end of the inductor L4 and the emitter of the triode Q1, the collector of the triode Q1 is connected to one end of the resistor R9, the other end of the resistor R9 is grounded, the base of the triode Q1 is connected to one end of the inductor L3 and the second pin of the operational amplifier U3, the other end of the inductor L4 is connected to one end of the resistor R8, the other end of the resistor R8 is connected to the other end of the inductor L3, the fourth pin of the operational amplifier U3 and the seventh pin of the operational amplifier U3 are both open-circuit, the sixth pin of the operational amplifier U3 is connected to one end of the resistor R7, the other end of the resistor R7 is connected to the voltage signal VOUT and the sixth pin of the integrated chip U5, the third pin of the operational amplifier U3 is connected to the fourth pin of the integrated chip 5, the third pin of the integrated chip U5 is a broken circuit, the second pin of the integrated chip U5 is connected with the anode of the diode D3, the cathode of the diode D3 is connected with one end of the capacitor C4, the other end of the capacitor C4 is connected with the first pin of the integrated chip U5, and the eighth pin of the integrated chip U5 is connected with the voltage signal VCC.
In a further embodiment, the thermocouple TC1 measures the temperature of the field to be measured continuously in real time and transmits the measurement data to the integrated chip U4, and by comparing the measurement data with the measurement data of the thermocouple TC2 on the closable branch, the loss of abrupt temperature data is avoided, and the comprehensive measurement of the dynamic temperature is ensured.
In a further embodiment, in the case of a significant heat exchange environment, it is necessary to manually open the switch SW1 to switch on the thermocouple TC2, i.e. the second auxiliary branch for instantaneous temperature measurement, which avoids the time-domain missing of data measurement and acquisition of instantaneous temperature due to the delay of the thermocouple TC 1.
In a further embodiment, the diode D1 is a zener diode, and is connected to the ic U4 to ensure a high resistance characteristic when a low voltage is stabilized, so as to protect the measuring branch of the thermocouple TC2 from being damaged by the high voltage.
In a further embodiment, the operational amplifier U1 amplifies the measured current of the thermocouple TC1, the operational amplifier U2 amplifies the measured current of the thermocouple TC2 by multiple times, the two measured currents are compared by the MOS transistor M1, and the final current is output to the integrated chip U5 for data processing, and transient data storage and data transmission are performed in two paths.
In a further embodiment, the MOS transistor M1 utilizes its own electric field reversal characteristic through a temperature measurement branch connecting the thermocouple TC1 and the thermocouple TC2, and when the temperature conversion data of the two is within a safe range, the MOS transistor M1 stably accumulates positive charges on the G pole, otherwise accumulates negative charges, thereby updating the temperature real-time measurement data.
In a further embodiment, the capacitor C4 and the diode D3 form a protection circuit to prevent the integrated chip U5 from being damaged by excessive current caused by high transient temperature.
In a further embodiment, the model of the integrated chip U4 is AD734, and the model of the integrated chip U5 is AD584 KA.
In a further embodiment, the resistor R9, the resistor R8, the inductor L3, and the inductor L4 form a noise removal circuit, which can avoid the interference of the circuit operation on the measurement.
In a further embodiment, the buzzer BUZ1 sounds an alarm when the current reaches the working point under the control of the triode Q2 and the measured temperature is considered to be too high, which causes a safety hazard.
A time domain calibration method for dynamic temperature measurement, comprising:
step 1, representing each data of temperature measurement in a Laplace form, wherein according to a representation mode of a dynamic system, an input quantity of the system is represented by a(s), an output quantity of the system is represented by b(s), a transfer function of the system is represented by H(s), an error quantity at an input end of the system is represented by d 1(s), an error quantity at an output end of the system is represented by d 2(s), and a system error is d 3(s);
step 2, establishing an error formula of temperature measurement and analyzing dynamically measured error data from the error formula;
step 21, according to the representation form of the dynamic system, the error formula of the temperature measurement can be further expressed as:
b（s）=H（s）[a(s)+d1(s)]+d2(s)+d3(s) （1）
step 22, because of the consistency of the nature of the error, as shown in fig. 3, both the dynamic error and the static error can be understood as the difference between the measured value and the true value, but because the dynamic error includes randomness and dynamics, specific data processing needs to be performed after distinguishing from the static error;
from equation 1, the transformation of the equation yields:
b（s）=H（s）a(s)+[H(s)d1(s)+d2(s)+d3(s)] (2)
since the value of the transient temperature of the temperature measurement is large, and the value of the static error is generally considered to be negligible in comparison, the system output value b 1(s) containing only the dynamic error can be directly expressed as:
b1（s）=H（s）a(s) (3)
step 23, establishing a model according to the transfer function can obtain:
H（s）=B（s）/A（s） （4）
the calculation mode of H(s) is the steady-state response of a sinusoidal input signal of a temperature measurement model in a frequency domain, and the calculation mode directly loses the calculation of temperature transient change, so that the data of temperature measurement is lost; in order not to affect the direct measurement of the system, and to increase the measured data of the transient temperature, the calculation of a(s) may be increased by a step function.
In a further embodiment, the algorithm is used on the premise that the temperature error is mainly caused by dynamic errors, the specific detection can be based on adaptive phase-frequency data, whether the sensor distorts the input signal is analyzed, and if not, the method is applicable, otherwise, the method is not applicable.
In a further embodiment, as shown in fig. 4 and 5, the step function needs to be calculated by means of a unit step signal u1 (t) in combination with the temperature measured transient temperature u2 (t).
In summary, the present invention has the following advantages: in the face of dynamic temperature measurement, the accuracy of temperature measurement can be ensured by setting the double-couple measurement branch, and the measurement of transient temperature can be accurately completed by combining a user-defined transient temperature change model under a step function model, so that a reference is further provided for temperature data processing. Overall, the accuracy and the integrity of dynamic temperature measurement are enhanced, the measurement and the calculation of special transient values of dynamic temperature under artificial experience are replaced by using a mathematical model, the combination with the dynamic characteristics of temperature in the data measurement process is enhanced, and the reliability of temperature measurement are improved.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. The invention is not described in detail in order to avoid unnecessary repetition.

Claims (1)

1. A time domain calibration method for dynamic temperature measurement, comprising:
step 1, representing each data of temperature measurement in a Laplace form, wherein according to a representation mode of a dynamic system, an input quantity of the system is represented by a(s), an output quantity of the system is represented by b(s), a transfer function of the system is represented by H(s), an error quantity at an input end of the system is represented by d 1(s), an error quantity at an output end of the system is represented by d 2(s), and a system error is d 3(s);
step 2, establishing an error formula of temperature measurement and analyzing dynamically measured error data from the error formula;
step 21, according to the representation form of the dynamic system, the error formula of the temperature measurement is further represented as:
b（s）=H（s）[a(s)+d1(s)]+d2(s)+d3(s) （1）
step 22, because of the consistency of the error essence, the dynamic error and the static error are both understood as the difference between the measured value and the true value, but because the dynamic error contains randomness and dynamics, specific data processing needs to be carried out after the dynamic error is distinguished from the static error;
according to equation (1), the formula is transformed to obtain:
b（s）=H（s）a(s)+[H(s)d1(s)+d2(s)+d3(s)] (2)
since the value of the transient temperature of the temperature measurement is large, and the value of the static error is generally considered to be negligible in comparison, the system output value b 1(s) containing only the dynamic error is directly expressed as:
b1（s）=H（s）a(s) (3)
and step 23, establishing a model according to the transfer function to obtain:
H（s）=B（s）/A（s） （4）
the calculation mode of H(s) is the steady-state response of a sinusoidal input signal of a temperature measurement model in a frequency domain, and the calculation mode of H(s) directly loses the calculation of temperature transient change, so that the data of temperature measurement is lost; in order to not influence the direct measurement of the system and increase the measurement data of the transient temperature, step function increase is carried out on the calculation of A(s);
the premise of using the step function algorithm is that the temperature error is mainly caused by dynamic errors, the adaptive phase-frequency data is specifically detected as the basis, whether the input signal is distorted by the sensor is analyzed, if not, the method is applicable, otherwise, the method is not applicable;
the step function needs to be calculated by means of a unit step signal u1 (t) in combination with a temperature measured transient temperature u2 (t);
the dynamic temperature measurement comprises: a dual couple temperature measurement device, the dual couple temperature measurement device comprising:
the device comprises an energy supply unit, a sampling processing unit, a data processing unit and a data transmission unit, wherein the sampling processing unit also comprises a temperature measuring circuit;
the energy supply unit is mainly divided into a power supply module and an energy management module, the current of the power supply is controlled through the energy management module, reasonable energy support is provided for the operation of the whole device, the energy management module carries out optimized management on the electric quantity use of the power supply, and the maximum possible economic effect is realized;
the sampling processing unit is used for measuring the temperature of a measured field in real time by arranging a temperature measuring circuit and carrying out analog-to-electrical conversion on measured data by an A/D conversion module so as to finish sampling work and provide data for subsequent data processing;
the data processing unit is mainly used for carrying out preliminary data on the data by using a microprocessor with lower power in order to reduce the cost, and carrying out necessary transmission and storage work on the required data under the management of a master control end;
the data transmission unit realizes wireless transmission and exchange of data between nodes and mainly uses three transmission media of radio frequency, ultrasonic waves or light waves;
a temperature measuring circuit, including a thermocouple TC1, a thermocouple TC2, an operational amplifier U1, an operational amplifier U2, an operational amplifier U3, an integrated chip U4, an integrated chip U5, an inductor L1, an inductor L2, an inductor L3, a capacitor C3, a MOS transistor M3, a transistor Q3, a diode D3, a resistor R3, a buzzer BUZ 3, a switch SW 3, and a switch SW 3, wherein one end of the inductor L3 is connected to a first terminal of the integrated chip U3, and a negative terminal of the inductor L3 is connected to a second terminal of the integrated chip U3, and a negative terminal of the diode D3 is connected to a negative terminal of the integrated chip U3, and a negative terminal of the diode D3, and a negative terminal of the diode 3 is connected to a negative terminal of the integrated chip 3, a third pin of the integrated chip U4 is disconnected from a sixth pin of the integrated chip U4, a ninth pin of the integrated chip U4 and an eleventh pin of the integrated chip U4, a fourth pin of the integrated chip U4 is connected to one end of the capacitor C3, the other end of the capacitor C3 is connected to a twelfth pin of the integrated chip U4 and one end of the resistor R10, a fifth pin of the integrated chip U4 is connected to a voltage signal VCC, a seventh pin of the integrated chip U4 is connected to one end of the switch SW2, an eighth pin of the integrated chip U4 is connected to one end of the inductor L2, a tenth pin of the integrated chip U4 is connected to one end of the resistor R6, the other end of the resistor R6 is grounded to the other end of the inductor L2, a fourteenth pin of the integrated chip U4 is connected to the negative electrode of the thermocouple TC1, the positive electrode of the thermocouple TC1 is connected to the third pin of the operational amplifier U1, the second pin of the operational amplifier U1 is connected to one end of the resistor R3, the fourth pin of the operational amplifier U1 and the seventh pin of the operational amplifier U1 are both open-circuit, the sixth pin of the operational amplifier U1 is connected to one end of the resistor R1, the other end of the resistor R1 is connected to the fifth pin of the integrated chip U5 and the G-pole of the MOS transistor M1, the seventh pin of the integrated chip U5 is connected to the other end of the resistor R10, the other end of the resistor R3 is connected to one end of the resistor R4 and one end of the capacitor C1, the other end of the resistor R4 is connected to the other end of the capacitor C1 and the S-pole of the MOS transistor M1, one end of the resistor R2 is connected to the D-pole of the MOS transistor M1, and the other end of the resistor R2 is connected to the sixth pin of the operational amplifier U2, a fourth pin of the operational amplifier U2 and a seventh pin of the operational amplifier U2 are both open-circuit, a third pin of the operational amplifier U2 is connected to one end of the resistor R5 and one end of the resistor R11, the other end of the resistor R5 is connected to one end of the capacitor C2, one end of the resistor R12 and a negative electrode of the thermocouple TC2, the other end of the capacitor C2 is grounded, a positive electrode of the thermocouple TC2 is connected to the other end of the switch SW1, the other end of the resistor R12 is connected to one end of the capacitor C5, the other end of the capacitor C5 is connected to an emitter of the transistor Q2, a base of the transistor Q2 is connected to the other end of the resistor R11, a collector of the transistor Q2 is connected to one end of the buzzer BUZ1, the other end of the buzzer BUZ1 is connected to the other end of the switch SW2, and a second pin of the operational amplifier U2 is connected to a positive electrode 2D 2, the cathode of the diode D2 is connected to one end of the inductor L4 and the emitter of the triode Q1, the collector of the triode Q1 is connected to one end of the resistor R9, the other end of the resistor R9 is grounded, the base of the triode Q1 is connected to one end of the inductor L3 and the second pin of the operational amplifier U3, the other end of the inductor L4 is connected to one end of the resistor R8, the other end of the resistor R8 is connected to the other end of the inductor L3, the fourth pin of the operational amplifier U3 and the seventh pin of the operational amplifier U3 are both open-circuit, the sixth pin of the operational amplifier U3 is connected to one end of the resistor R7, the other end of the resistor R7 is connected to the voltage signal VOUT and the sixth pin of the integrated chip U5, the third pin of the operational amplifier U3 is connected to the fourth pin of the integrated chip 5, the third pin of the integrated chip U5 is an open circuit, the second pin of the integrated chip U5 is connected with the anode of the diode D3, the cathode of the diode D3 is connected with one end of the capacitor C4, the other end of the capacitor C4 is connected with the first pin of the integrated chip U5, and the eighth pin of the integrated chip U5 is connected with a voltage signal VCC;
the thermocouple TC1 carries out continuous real-time temperature measurement on a measured field, and transmits measurement data to the integrated chip U4, and the measurement data is compared with the measurement data of the thermocouple TC2 on a closable branch, so that sudden temperature data are prevented from being lost, and the comprehensive measurement of dynamic temperature is ensured;
the diode D1 is a voltage stabilizing diode and is connected with the integrated chip U4, so that the high resistance characteristic is ensured when the low voltage is stabilized, and the measuring branch of the thermocouple TC2 is protected from being damaged by the high voltage;
the MOS tube M1 utilizes the self electric field reversal characteristic through a temperature measuring branch circuit connected with the thermocouple TC1 and the thermocouple TC2, when the temperature conversion data of the two are in a safe range, the MOS tube M1 stably accumulates positive charges on the G electrode, otherwise, negative charges are accumulated, and thus the real-time temperature measuring data are updated;
the model of the integrated chip U4 is AD734, and the model of the integrated chip U5 is AD584 KA;
under the control of the triode Q2, when the current reaches a working point, the buzzer BUZ1 considers that potential safety hazards appear when the measured temperature is too high, and gives an alarm.
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