CN110952072A - 一种ZnO薄膜紫外探测器件的制备方法 - Google Patents

一种ZnO薄膜紫外探测器件的制备方法 Download PDF

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CN110952072A
CN110952072A CN201811134184.5A CN201811134184A CN110952072A CN 110952072 A CN110952072 A CN 110952072A CN 201811134184 A CN201811134184 A CN 201811134184A CN 110952072 A CN110952072 A CN 110952072A
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吴昊
郑美娟
刘昌�
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SUZHOU Institute OF WUHAN UNIVERSITY
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Abstract

本发明提供了一种ZnO薄膜紫外探测器件的制备方法，该方法是采用原子层沉积法生长ZnO薄膜，再采用快速热退火处理，得到需要的ZnO薄膜，最后蒸镀电极形成紫外探测器件。这种紫外探测器件可以大面积生长，均匀性好，具有很小的暗电流，大的光暗电流比，响应时间短，响应度高的优点。

Description

一种ZnO薄膜紫外探测器件的制备方法
技术领域
本发明涉及一种ZnO薄膜紫外探测器件及其制备方法。
背景技术
近年来，紫外探测器受到了极大的关注，可实际应用于军事以及民用领域，包括导弹探测，火焰监测，紫外线辐射检测等，传统的硅基探测器可用于紫外、可见以及红外探测器，其响应波长宽，用于紫外探测时易受可见光的干扰，需要添加滤光装置，使紫外探测性能减弱。宽禁带半导体由于具有禁带宽度大、可用于紫外探测等优点逐渐得到人们的关注。这些半导体包括GaN,ZnO,SiC等。其中氧化锌(ZnO)作为一种宽禁带半导体材料(室温下禁带宽度为3.37eV),具有比GaN更高的激子束缚能(60meV),使其在继GaN之后成为光电研究领域的又一热门材料。目前做纳米结构的ZnO探测器的研究者较多，因为纳米结构的ZnO具有大的比表面积，基于表面氧吸附和解吸的机理，使其具有良好的紫外探测性能，但在制备纳米结构的方法在重复性和大面积生产方面还有待提高。同时，ZnO薄膜具有高度均匀性、平整性、重复性高、可大面积生产等优点。但直接生长的氧化锌薄膜应用于紫外探测器普遍具有暗电流大，光暗电流比小，响应时间长的缺点，如何获得高性能的ZnO薄膜紫外探测器仍然是一个难题。本发明采用原子层沉积工艺，生长大面积、均匀性好、厚度可控的ZnO薄膜，用于紫外光探测器件。
发明内容
本发明的目的是提供一种低成本，大面积生长高均匀性ZnO薄膜的方法，并以此为基础制备了高性能紫外探测器件。
实现本发明目的的技术方案是：
一种大面积生长高均匀性ZnO薄膜的方法，采用原子层沉积方法低温生长ZnO电极薄膜。
优选地，采用原子层沉积法低温生长ZnO电极薄膜的过程包括：采用二乙基锌和去离子水作为锌和氧的前驱体源，氮气作为前驱体源的载气，将生长室真空抽到10Pa以下，升温至100℃，先通入二乙基锌，然后用氮气吹扫，再通入去离子水，继续用氮气吹扫，如此为一个周期，生长若干周期，直到达到要求的厚度。
一种大面积生长高均匀性ZnO薄膜，其特征在于，采用权利要求1或2所述的方法制备得到。
本发明还提供一种ZnO薄膜紫外光探测器件的制备方法，包括如下步骤：
(1)采用上述的方法在衬底上低温生长ZnO电极薄膜；
(2)将生长完成后的薄膜在氧气氛中进行快速热退火处理，退火温度400～600℃，退火时间3-6分钟；
(3)在步骤(2)所得薄膜上生长金属电极，通过紫外光刻形成叉指电极结构制备紫外探测器件。
优选地，步骤(1)中所用衬底为蓝宝石衬底或Si片。
优选地，步骤(3)中金属电极包括Cr/Au或Ni/Au。
优选地，步骤(3)中金属电极采用热蒸发方法进行生长。
本发明还提供一种ZnO薄膜紫外光探测器，采用上述的方法制备得到。
原子层沉积法，采用交替通入两种不同前驱体源，两者之间用惰性的气体吹扫。两种前驱体源之间，发生的是化学反应，由于化学反应的饱和性，两者反应完全后，继续通入的前驱体就不再反应了，多余的前驱体和反应副产物被气体吹扫干净，从而实现自限制过程，达到一个周期只生长一个单分子层材料的结果。由于每周期只生长一个单分子层，所以厚度能够精确控制；由于是饱和化学反应，所以薄膜中空位缺陷非常少。可以在复杂三维结构，纳米尺度结构上高保形的生长薄膜，生长的薄膜连续均匀致密，包覆性好，且可以生长超过8英寸直径的大面积薄膜。另外原子层沉积法需要的仪器成本更低，相比金属有机化学气相沉积等方法往往在十分之一以下，而且日常使用也不像金属有机物化学气相沉积法那样需要诸如液氮之类大量消耗的成本。
本发明ZnO薄膜中采用原子层沉积法生长，所以氧空位相比其它方法生长的ZnO薄膜来说特别的少，从而减少了氧空位带了的载流子；又由于我们采用了一个高温退火过程，有效去除了ZnO薄膜在生长过程中产生的氢掺杂，减少了氢掺杂带来的载流子，所以本发明采用的方法得到的ZnO薄膜，载流子浓度低，使得暗电流特别小，响应度高，响应时间短。直接制备的ZnO薄膜，未经修饰，在光强为108.16μW/cm2下，10V偏压下暗电流就为5nA，光暗电流比10V下超过200，响应度最高为42A/W；响应时间最低为10ms。
附图说明
图1是用本发明实施例1方法450℃退火温度下制备得到的ZnO薄膜紫外探测器件的光响应曲线，可见器件的光响应峰在紫外波段的365nm波长附近；
图2是用本发明实施例1方法在450℃退火温度下制备的ZnO薄膜紫外探测器件的电流电压关系曲线，可以看到光暗电流比在10V时都超过200；
图3是用本发明实施例1方法在450℃退火温度下制备的ZnO薄膜紫外探测器件的时间响应曲线，可见响应时间约10ms；
图4是用本发明实施例1方法在450℃退火温度下制备的ZnO薄膜紫外探测器件的响应度曲线，可见10V偏压下响应度为42A/W。
具体实施方式
下面结合实施例子及附图对本发明做进一步详细的描述，但本发明的实施方式不限于此。
实施例1
本实施例选择两英寸的蓝宝石衬底作为衬底，但衬底不限于这个尺寸和材料，其它常用于微电子、光电子器件的衬底，如Si片等，也可用于作为本发明的衬底材料。
制备ZnO薄膜：采用二乙基锌和去离子水作为锌和氧的前驱体源，氮气作为前驱体源的载气。将生长室真空抽到10Pa以下，升温至100℃，先通入二乙基锌，时间为300毫秒，然后通入5秒的氮气吹扫，接着通入300毫秒去离子水，再通入5秒氮气吹扫，如此为一个生长周期，生长800个周期，得到薄膜厚度约120纳米。
制备ZnO薄膜紫外探测器：采用快速热退火方法，将所得薄膜在氧气气氛中退火处理，退火温度为400～600℃，退火时间5分钟，得到退火处理后的ZnO薄膜；采用热蒸发方法，在ZnO薄膜上，蒸镀Cr/Au电极层，并采用紫外光刻方法形成叉指电极结构，得到需要的ZnO薄膜紫外探测器件。
对所得ZnO薄膜紫外探测器件进行了多种性能测试，测试结果如图1～4所示。
图1给出了450℃下退火样品的光响应曲线。将探测器分样品别加上5V或10V偏压，在250nm到450nm波长，强度为108.16μW/cm2的紫外光照射下，测量探测器光响应度随入射光波长变化的情况。探测器光响应度为探测器输出电流除以入射光功率的比值，入射光功率可以由入射光强度和探测器接收面积乘积得到。测试结果可以看到，无论加5V还是10V偏压时，光响应度最强值都出现在入射光波长365nm附近，说明我们的探测器最佳探测波长是365nm的紫外波段。
图2给出了450℃下退火样品的光电流、暗电流随所加偏压变化的关系。暗电流测试是在无光情况下，给样品加上从-10V到10V变化的偏压，测量电流大小；光电流测试则是在上述测试中加上波长为365nm，强度为108.16μW/cm2的紫外光照射。在同一个偏压下测到的样品的光电流大小除以暗电流大小的比值，即是光暗电流比。可以看到，在10V偏压下，样品的光暗电流比超过200。
图3给出了450℃下退火样品的时间响应曲线。将探测器样品分别加上5V、10V、15V或20V的偏压，测量电流大小。在某个时刻加上加上波长为365nm，强度为108.16μW/cm2的紫外光照射，经过一段时间后再关闭紫外光照射。测试探测器在从无光到有光照射过程中，电流从暗电流大小增加到光电流大小需要的时间。可见相应时间约10ms。
图4给出了450℃下退火样品的响应度曲线。将探测器样品分别加上2-20V的偏压，测试在波长为365nm，强度为108.16μW/cm2的紫外光照射下，不同偏压下光响应度的大小。可以看到，响应度随偏压增大近似线性增加，10V偏压下响应度为42A/W。

Claims (8)

1.一种大面积生长高均匀性ZnO薄膜的方法，其特征在于，采用原子层沉积方法低温生长ZnO电极薄膜。
2.根据权利要求1所述的大面积生长高均匀性ZnO薄膜的方法，其特征在于，采用原子层沉积法低温生长ZnO电极薄膜的过程包括：采用二乙基锌和去离子水作为锌和氧的前驱体源，氮气作为前驱体源的载气，将生长室真空抽到10Pa以下，升温至100℃，先通入二乙基锌，然后用氮气吹扫，再通入去离子水，继续用氮气吹扫，如此为一个周期，生长若干周期，直到达到要求的厚度。
3.一种大面积生长高均匀性ZnO薄膜，其特征在于，采用权利要求1或2所述的方法制备得到。
4.一种ZnO薄膜紫外光探测器件的制备方法，其特征在于，包括如下步骤：
(1)采用权利要求1或2所述的方法在衬底上低温生长ZnO电极薄膜；
(2)将生长完成后的薄膜在氧气氛中进行快速热退火处理，退火温度400～600℃，退火时间3-6分钟；
(3)在步骤(2)所得薄膜上生长金属电极，制备紫外探测器件。
5.根据权利要求4所述的ZnO薄膜紫外光探测器件的制备方法，其特征在于，步骤(1)中所用衬底为蓝宝石衬底或Si片。
6.根据权利要求4所述的ZnO薄膜紫外光探测器件的制备方法，其特征在于，步骤(3)中金属电极包括Cr/Au或Ni/Au。
7.根据权利要求4所述的ZnO薄膜紫外光探测器件的制备方法，其特征在于，步骤(3)中金属电极采用热蒸发方法进行生长。
8.一种ZnO薄膜紫外光探测器，其特征在于，采用权利要求4～7任一项所述的方法制备得到。
CN201811134184.5A 2018-09-27 2018-09-27 一种ZnO薄膜紫外探测器件的制备方法 Pending CN110952072A (zh)

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