CN110928354B - 一种低工作电压高稳定性基准电压源 - Google Patents
一种低工作电压高稳定性基准电压源 Download PDFInfo
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- CN110928354B CN110928354B CN201911345294.0A CN201911345294A CN110928354B CN 110928354 B CN110928354 B CN 110928354B CN 201911345294 A CN201911345294 A CN 201911345294A CN 110928354 B CN110928354 B CN 110928354B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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CN111880599B (zh) * | 2020-07-11 | 2021-06-22 | 许昌学院 | 一种抗生产工艺偏差的高精度基准电压源 |
CN113110679B (zh) * | 2021-04-25 | 2022-05-20 | 广东宝元通检测股份有限公司 | 一种适用于纳米级cmos工艺的低功耗基准电压源 |
CN115268560A (zh) * | 2021-04-30 | 2022-11-01 | 炬芯科技股份有限公司 | 一种基准电压产生电路和集成芯片 |
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CN105388953B (zh) * | 2015-09-21 | 2017-04-05 | 东南大学 | 一种具有高电源抑制比的带隙基准电压源 |
CN109343639B (zh) * | 2018-11-01 | 2020-09-22 | 西安电子科技大学 | 一种低温漂带隙基准电压电路、方法及其芯片 |
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Effective date of registration: 20230824 Address after: 230000 b-1018, Woye Garden commercial office building, 81 Ganquan Road, Shushan District, Hefei City, Anhui Province Patentee after: HEFEI WISDOM DRAGON MACHINERY DESIGN Co.,Ltd. Address before: Weidu District Bayi Road Xuchang city Henan province 461000 No. 88 Patentee before: XUCHANG University |
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Effective date of registration: 20230901 Address after: 518000, 2 / F, building 7, Huachang Industrial Park, 570 Zhoushi Road, Jiuwei community, Hangcheng street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen huachenyuan Technology Co.,Ltd. Address before: 230000 b-1018, Woye Garden commercial office building, 81 Ganquan Road, Shushan District, Hefei City, Anhui Province Patentee before: HEFEI WISDOM DRAGON MACHINERY DESIGN Co.,Ltd. |