CN110928137A - Mask and manufacturing method thereof - Google Patents

Mask and manufacturing method thereof Download PDF

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Publication number
CN110928137A
CN110928137A CN201911242153.6A CN201911242153A CN110928137A CN 110928137 A CN110928137 A CN 110928137A CN 201911242153 A CN201911242153 A CN 201911242153A CN 110928137 A CN110928137 A CN 110928137A
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CN
China
Prior art keywords
coating
light
substrate
mask
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911242153.6A
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Chinese (zh)
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CN110928137B (en
Inventor
侯广杰
谢超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Longtu Optical Mask Co ltd
Original Assignee
SHENZHEN STARMASK OPTOELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by SHENZHEN STARMASK OPTOELECTRONICS CO Ltd filed Critical SHENZHEN STARMASK OPTOELECTRONICS CO Ltd
Priority to CN201911242153.6A priority Critical patent/CN110928137B/en
Publication of CN110928137A publication Critical patent/CN110928137A/en
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Publication of CN110928137B publication Critical patent/CN110928137B/en
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76Patterning of masks by imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82Auxiliary processes, e.g. cleaning or inspecting

Abstract

The mask comprises a substrate, a graphical light-blocking layer and a first coating, wherein the substrate is made of a light-transmitting material, the first coating is formed on part of the surface of the substrate and the surface of the graphical light-blocking layer, the first coating is light-transmitting, and the material of the first coating contains fluorine carbon groups. The first coating is formed on the surface of the light-blocking layer, and the first coating material contains the fluorine carbon group, so that the fluorine carbon group in the material can provide very low surface tension/activity for the surface of the mask, the tolerance to organic solvents such as acetone and alcohol can be improved, meanwhile, the first coating enables the formed mask to prevent the adhesion of photoresist and dust particles, and the mask is resistant to scratch and easy to clean, so that the problems of repeated repair, cleaning, even early scrapping and the like in the use process of the mask are reduced, and the production efficiency and the product yield are improved.

Description

Mask and manufacturing method thereof
Technical Field
The invention relates to the field of manufacturing of masks, in particular to a mask and a manufacturing method thereof.
Background
The mask plate is formed by combining a metal layer film or a light-blocking layer film with patterns, characters and other information recorded on the surface and a substrate.
The traditional mask is mainly applied to TP (Touch Panel), LCD (Liquid crystal display), FPC (Flexible Printed Circuit), etc., and the exposure mode thereof is to use the mask as an optical mold, and to copy the graphic information on the mask to the front-end product thereof by means of contact exposure, vacuum adsorption exposure, etc. During the use of the mask, a series of process difficulties are generated, such as: the mask plate needs to be frequently repaired, cleaned and maintained due to the conditions of scratch, dirt and the like of the mask plate, and the production efficiency and the product yield are seriously influenced.
Disclosure of Invention
The invention mainly solves the technical problem of avoiding the problems of repeated repair, cleaning, even early scrapping and the like of the mask in the using process.
The invention provides a mask plate which comprises a substrate, wherein the substrate is made of a light-transmitting material; the patterned light-blocking layer is formed on the surface of the substrate; and the first coating is formed on the surface of the patterned light-blocking layer and the surface of the substrate, the first coating has light transmittance, and the material of the first coating contains fluorine carbon groups.
Further, the water contact angle of the first coating material is 115-120 degrees, and the oil contact angle is 65-70 degrees.
Further, the material of the first coating layer is an AF layer, and the thickness is 7 nm-10 nm.
Further, a second coating layer is included, the second coating layer being positioned between the patterned light blocking layer and the first coating layer.
Further, the second coating is made of silicon dioxide and has a thickness of 5 nm-10 nm.
The invention also provides a manufacturing method of the mask, which comprises the steps of providing a substrate, wherein the substrate is made of a light-transmitting material; forming a graphical light-blocking layer on the surface of the substrate; and forming a first coating on the patterned light-blocking layer and the surface of the substrate, wherein the first coating has light transmittance, and the material of the first coating contains fluorine carbon groups.
Further, the process of forming the first coating layer 300 is vacuum evaporation or vacuum magnetic sputtering.
Further, after the patterned light-blocking layer is formed on the surface of the substrate, the method further comprises the following steps: and cleaning the patterned light-blocking layer and the surface of the substrate.
Further, before the first coating layer is formed on the surface of the patterned light-blocking layer, the method further comprises the following steps: and forming a second coating on the surface of the patterned light-blocking layer and the surface of the substrate, wherein the first coating is formed on the surface of the second coating.
Further, the second coating is made of silicon dioxide and has a thickness of 5 nm-10 nm.
According to the mask and the manufacturing method thereof provided by the embodiment, the mask comprises the substrate, the graphical light-blocking layer and the first coating formed on the surface of the substrate and the surface of the graphical light-blocking layer, the substrate is made of a light-transmitting material, the first coating has light-transmitting property, and the material of the first coating contains fluorine carbon groups. Through forming first coating on the light blocking layer surface, because contain the fluorine carbon group in the material of first coating, the fluorine carbon group coating is on the top layer, can provide lower surface tension/activity for mask surface, improves the tolerance to the organic solvent of acetone, alcohol class, simultaneously, first coating makes the mask that forms can prevent the adhesion of photoetching glue, dust granule, and is able to bear or endure marring, easy clean for the mask that forms can avoid fish tail, dirty scheduling problem, improves production efficiency and product yields.
Drawings
Fig. 1 to 4 are schematic structural diagrams of a mask manufacturing process according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of a mask application provided in an embodiment of the present application;
fig. 6 is a schematic diagram of a molecular formula structure of a first coating material according to an embodiment of the present disclosure.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. Wherein like elements in different embodiments are numbered with like associated elements. In the following description, numerous details are set forth in order to provide a better understanding of the present application. However, those skilled in the art will readily recognize that some of the features may be omitted or replaced with other elements, materials, methods in different instances. In some instances, certain operations related to the present application have not been shown or described in detail in order to avoid obscuring the core of the present application from excessive description, and it is not necessary for those skilled in the art to describe these operations in detail, so that they may be fully understood from the description in the specification and the general knowledge in the art.
Furthermore, the features, operations, or characteristics described in the specification may be combined in any suitable manner to form various embodiments. Also, the various steps or actions in the method descriptions may be transposed or transposed in order, as will be apparent to one of ordinary skill in the art. Thus, the various sequences in the specification and drawings are for the purpose of describing certain embodiments only and are not intended to imply a required sequence unless otherwise indicated where such sequence must be followed.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). As can be seen from the background art, in the use process of the mask in the prior art, the contact surface of the mask and a product is easy to scratch, dirty and the like, so that the mask needs to be frequently repaired, cleaned, maintained and the like.
In the traditional mask application industry, i.e. TP, LCD, FPC applications, the exposure machine typically uses two wavelengths of light source: λ 365nm and λ 436 nm. Especially in LCD products, the lithographic pattern size is relatively small, which can be as small as d-3 um. Therefore, in the process of manufacturing the mask, it is necessary to avoid the influence on the light transmittance and the light diffraction during the exposure process so as to avoid the influence on the performance of the mask.
The invention provides a mask and a manufacturing method thereof, wherein the mask comprises a substrate and a graphical light-blocking layer, the substrate is made of light-transmitting materials, the graphical light-blocking layer is formed on the surface of the substrate, and a first coating is formed on the graphical light-blocking layer and the surface of the substrate, the first coating has light-transmitting property, and the materials contain fluorine carbon groups. The first coating is formed on the surface of the patterned light-blocking layer and the surface of the substrate, namely, the surface of the mask plate is provided with the first coating, and the first coating material contains fluorine carbon groups, so that the fluorine carbon groups in the material can provide very low surface tension/activity for the surface, and meanwhile, the first coating can prevent the formed mask plate from being adhered with photoresist and dust particles, so that the effects of resisting scratch and being easy to clean are achieved, therefore, the first coating can avoid the surface of the mask plate from being scratched, can prevent the contact surface of the mask plate from being stained with a product, reduces the repair times and the cleaning maintenance times of the mask plate, and can improve the production efficiency.
In order that the invention may be more readily understood, reference will now be made in detail to the present invention as illustrated in the accompanying drawings.
Referring to fig. 1 to 4, a process schematic diagram of a method for manufacturing a mask according to the present embodiment includes: in step S1, the substrate 100 is provided. Referring to fig. 1, in the embodiment, the substrate 100 is a transparent material, and the substrate 100 may be quartz glass. The quartz glass has high transmittance to deep ultraviolet light, and the thermal expansion coefficient of the quartz glass is only 0.5 ppm/DEG C, while the thermal expansion coefficient of the common glass is 9.4 ppm/DEG C, so that the quartz glass has better performance compared with the common glass, can have better light transmittance, and is beneficial to improving the quality of a mask. In other embodiments, the substrate 100 may be made of high purity fused silica, soda glass, soda lime glass, and the substrate 100 may have a thickness of 1mm to 10 mm.
In step S2, a patterned light-blocking layer 200a is formed on the surface of the substrate 100.
Referring to fig. 2 and 3, step S2 includes: first, a first light-blocking layer 200 is formed on the surface of the substrate 100, a photosensitive layer is coated on the surface of the first light-blocking layer 200, the first light-blocking layer 200 is subjected to pattern exposure by a laser direct writing method, then the exposed photosensitive layer is dissolved away by using an alkaline solvent, a part of the first light-blocking layer under the photosensitive layer is exposed, finally, the exposed part of the first light-blocking layer is removed by chemical etching, namely, a patterned light-blocking layer 200a is formed, and the surface of the patterned light-blocking layer 200a can be a pattern required by any client.
In this embodiment, the patterned light-blocking layer 200a may be made of metal or metal oxide with light-blocking effect, and has a thickness of 100nm to 500 nm.
In step S3, a first coating layer 300 is formed on the patterned light-blocking layer 200a and the surface of the substrate 100.
Referring to fig. 4, in the present embodiment, the first coating layer 300 has light transmittance, and the material of the first coating layer 300 includes fluorocarbon groups.
In other embodiments, before the first coating 300 is formed on the patterned light-blocking layer 200a and the surface of the substrate 100, an initial mask may be inspected, the patterned light-blocking layer 200a is formed on the surface of the substrate 100, and then the first coating 300 is formed after the initial mask is inspected to be qualified, so that process waste may be avoided and efficiency may be improved.
In this embodiment, the process of forming the first coating 300 is vacuum evaporation or vacuum magnetic sputtering.
In this embodiment, the first coating layer 300 covers the patterned light-blocking layer 200a and a portion of the surface of the substrate 100, so that the surface of the mask can be prevented from being scratched when the mask is used. Because the material of this first coating 300 contains the fluorine carbon group, the fluorine carbon group in the material can provide very low surface tension/activity for the mask surface, can improve the tolerance to the organic solvent of acetone, alcohol class, the adhesion of photoetching glue prevention, dust particle, after forming this first coating 300, when cleaning the mask surface, only need blow off surface particle dust with the purification air gun, perhaps dip in organic solvent with dustless cloth and clean the surface can, greatly reduce work load.
In other embodiments, before the first coating layer 300 is formed on the patterned light-blocking layer 200a and the surface of the substrate 100, the method further comprises the steps of: the patterned light-blocking layer 200a and the surface of the substrate 100 are cleaned.
In this embodiment, the cleaning method is to manually clean in alkaline cleaning solution and deionized water, and then dry the solution under ten-stage purification conditions; and inspecting the surface of a hundred-grade purifying darkroom by using a spotlight with more than 1 ten thousand lumens, and performing the film coating operation when the cleanliness is qualified.
In other embodiments, the cleaning device can be used for automatic cleaning, alkaline cleaning liquid and deionized water are also used, and then megasonic and nylon brushes are used for cleaning, and the cleaning device is rotated at a high speed and centrifugally dried; and after the cleanliness is checked to be qualified, performing film coating operation.
In the embodiment, the water contact angle of the material of the first coating 300 is 115-120 degrees, the oil contact angle is 65-70 degrees, and the water resistance and the oil resistance of the surface are ensured after the first coating 300 is coated, so that the dirt is avoided.
In this embodiment, the first coating 300 is an AF film, which is a hydrophobic film or an anti-fingerprint film, and has a light transmittance of 97% or more, so as to effectively prevent fingerprints, oil and dust.
In this embodiment, before the first coating 300 is formed on the surface of the patterned light-blocking layer 200a, the method further comprises the steps of: a second coating layer (not shown) is formed on the surface of the patterned light-blocking layer 200a and the surface of the substrate 100, wherein the first coating layer is formed on the surface of the second coating layer. The second coating layer is formed to improve adhesion of the first coating layer 300 to the original mask.
In this embodiment, the process of forming the second coating layer is vacuum evaporation or vacuum magnetic sputtering.
Referring to fig. 6, fig. 6 is a schematic diagram of a molecular formula structure of a fluorocarbon group in the AF material provided in this embodiment, on one hand, the fluorocarbon group at one end of the AF material can provide very low surface tension/activity to the surface, which is helpful for improving the tolerance to organic solvents such as acetone and alcohol, and at the same time, the first coating layer enables the formed mask to prevent adhesion of photoresist and dust particles, and to be scratch-resistant and easy to clean, so that the formed mask can avoid problems such as scratch and dirt; on the other hand, the silane group at the other end in the AF material can be well occluded with the second coating (silicon dioxide) or tightly occluded with the texture on the surface of the mask, so that the adhesion is improved.
In this embodiment, the thickness of the first coating 300 is 7nm to 10nm, the material of the second coating is silicon dioxide, and the thickness is 5nm to 10 nm; that is, the total thickness of the first coating layer 300 and the second coating layer is controlled to be 15nm to 20 nm.
It should be noted that, when the first coating layer 300 is formed, the thickness and material of the first coating layer 300 itself may affect the performance of the formed mask in use, for example, the light transmittance during exposure or the light diffraction problem may occur in use. In this embodiment, the materials of the first coating layer 300 and the second coating layer (coating layer) are silicon dioxide and an AF antifouling coating layer, the thickness of the coating layer is controlled to be 15nm to 20nm, the maximum distance Δ x of light diffraction in the exposure process can be guaranteed to be 2.91nm, which is far lower than the processing tolerance of the mask (3um 10% to 300nm), and the light transmittance of the coating layer is greater than or equal to 99.3%, so that the influence on the mask exposure process can be ignored.
Referring to fig. 5, an application diagram of a mask according to an embodiment of the present application shows that after exposure light passes through the mask, a part of the light irradiates on a product 400 to be exposed through the mask, and a contact surface between the product 400 to be exposed and the mask is changed from a previous patterned light-blocking layer 200a to a wear-resistant and anti-fouling first coating 300, so as to achieve the purposes of preventing fouling and wear-resisting and prolonging the service life of the mask.
The present application further provides a mask, please refer to fig. 4, fig. 4 is a schematic cross-sectional structure diagram of the mask of the present application, the mask includes a substrate 100 and a patterned light-blocking layer 200a, the substrate 100 is made of a light-transmitting material, and the patterned light-blocking layer 200a is formed on the surface of the substrate 100; and a first coating layer 300 formed on the surface of the patterned light-blocking layer 200a and the surface of the substrate 100, wherein the first coating layer 300 has light transmittance, and the material of the first coating layer 300 contains fluorocarbon groups.
In some embodiments, the material of the first coating layer has a water contact angle of 115-120 degrees and an oil contact angle of 65-70 degrees, and the first coating layer can be an AF coating film with a thickness of 7-10 nm.
In some embodiments, the reticle may further include a second coating (not shown) between the patterned light blocking layer and the first coating. The second coating is made of silicon dioxide and has a thickness of 5 nm-10 nm.
The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.

Claims (10)

1. A reticle, comprising:
the substrate is made of a light-transmitting material;
the patterned light-blocking layer is formed on the surface of the substrate;
and the first coating is formed on the surface of the patterned light-blocking layer and the surface of the substrate, the first coating has light transmittance, and the material of the first coating contains fluorine carbon groups.
2. The reticle of claim 1, wherein the first coating material has a water contact angle of 115 ° to 120 ° and an oil contact angle of 65 ° to 70 °.
3. The mask of claim 1, wherein the first coating is an AF layer having a thickness of 7nm to 10 nm.
4. The reticle of claim 1, further comprising a second coating layer positioned between the patterned light blocking layer and the first coating layer.
5. The reticle of claim 4, wherein the second coating layer is silicon dioxide and has a thickness of 5nm to 10 nm.
6. A method for manufacturing a mask is characterized by comprising the following steps:
providing a substrate, wherein the substrate is made of a light-transmitting material;
forming a graphical light-blocking layer on the surface of the substrate;
and forming a first coating on the patterned light-blocking layer and the surface of the substrate, wherein the first coating has light transmittance, and the material of the first coating contains fluorine carbon groups.
7. The manufacturing method according to claim 6, wherein the process of forming the first coating layer 300 is vacuum evaporation or vacuum magnetic sputtering.
8. The method of manufacturing according to claim 6, further comprising, after forming the patterned light blocking layer on the substrate surface: and cleaning the patterned light-blocking layer and the surface of the substrate.
9. The method of manufacturing according to claim 6, further comprising, before forming the first coating layer on the surface of the patterned light-blocking layer: and forming a second coating on the surface of the patterned light-blocking layer and the surface of the substrate, wherein the first coating is formed on the surface of the second coating.
10. The method of claim 9, wherein the second coating layer is formed of silicon dioxide having a thickness of 5nm to 10 nm.
CN201911242153.6A 2019-12-06 2019-12-06 Mask and manufacturing method thereof Active CN110928137B (en)

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Application Number Priority Date Filing Date Title
CN201911242153.6A CN110928137B (en) 2019-12-06 2019-12-06 Mask and manufacturing method thereof

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Application Number Priority Date Filing Date Title
CN201911242153.6A CN110928137B (en) 2019-12-06 2019-12-06 Mask and manufacturing method thereof

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CN110928137A true CN110928137A (en) 2020-03-27
CN110928137B CN110928137B (en) 2021-03-30

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266403A (en) * 2007-03-13 2008-09-17 台湾积体电路制造股份有限公司 Mask with hydrophobic surface
CN201611423U (en) * 2010-01-28 2010-10-20 深圳莱宝高科技股份有限公司 Masking device
CN202208152U (en) * 2011-09-06 2012-05-02 南昌欧菲光科技有限公司 Finger-print prevention film for touch screen
CN103302939A (en) * 2013-05-10 2013-09-18 西安建筑科技大学 Self-cleaning structure and manufacturing method thereof
CN103472673A (en) * 2013-09-16 2013-12-25 京东方科技集团股份有限公司 Mask plate and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101266403A (en) * 2007-03-13 2008-09-17 台湾积体电路制造股份有限公司 Mask with hydrophobic surface
CN201611423U (en) * 2010-01-28 2010-10-20 深圳莱宝高科技股份有限公司 Masking device
CN202208152U (en) * 2011-09-06 2012-05-02 南昌欧菲光科技有限公司 Finger-print prevention film for touch screen
CN103302939A (en) * 2013-05-10 2013-09-18 西安建筑科技大学 Self-cleaning structure and manufacturing method thereof
CN103472673A (en) * 2013-09-16 2013-12-25 京东方科技集团股份有限公司 Mask plate and preparation method thereof

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Address after: 518104 The first floor of plant 4 #, Shengzuozhi Science and Technology Industrial Park, north of Xinyu Road, Shajing Street, Bao'an District, Shenzhen, Guangdong

Patentee after: Shenzhen Longtu Optical Mask Co.,Ltd.

Address before: 518104 The first floor of plant 4 #, Shengzuozhi Science and Technology Industrial Park, north of Xinyu Road, Shajing Street, Bao'an District, Shenzhen, Guangdong

Patentee before: SHENZHEN LONGTU PHOTOMASK CO.,LTD.