CN110911827B - Broadband integrated balun and antenna unit - Google Patents

Broadband integrated balun and antenna unit Download PDF

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Publication number
CN110911827B
CN110911827B CN201910991663.7A CN201910991663A CN110911827B CN 110911827 B CN110911827 B CN 110911827B CN 201910991663 A CN201910991663 A CN 201910991663A CN 110911827 B CN110911827 B CN 110911827B
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China
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metal strip
microstrip
tooth
radiating
balun
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CN201910991663.7A
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CN110911827A (en
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傅随道
曹振新
陈鹏
曹蕊
江传民
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Nanjing Buwei Communication Equipment Co ltd
Southeast University
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Nanjing Buwei Communication Equipment Co ltd
Southeast University
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Priority to CN201910991663.7A priority Critical patent/CN110911827B/en
Publication of CN110911827A publication Critical patent/CN110911827A/en
Priority to PCT/CN2020/091693 priority patent/WO2021073089A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/48Earthing means; Earth screens; Counterpoises
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/50Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/52Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24Polarising devices; Polarisation filters 
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q19/00Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
    • H01Q19/10Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
    • H01Q19/104Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces using a substantially flat reflector for deflecting the radiated beam, e.g. periscopic antennas

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Abstract

The invention discloses a broadband integrated balun and an antenna unit, wherein the broadband integrated balun comprises a dielectric substrate, a microstrip line and a metal strip, the microstrip line is arranged on one surface of the dielectric substrate, and the metal strip is arranged on the other surface of the dielectric substrate; the metal strips are a first metal strip and a second metal strip which are arranged in a coplanar manner, an isolation gap is formed between the first metal strip and the second metal strip, and tooth-shaped gaps are formed in one sides of the first metal strip and one side of the second metal strip which form the isolation gap. The line unit can realize the bi-polarized stable electromagnetic radiation of 2/3/4/5G frequency band (1.7-3.6GHz) +/-45 degrees, and has the characteristics of wide working frequency band, high isolation and stable radiation pattern.

Description

Broadband integrated balun and antenna unit
Technical Field
The invention relates to the field of mobile communication, in particular to a band integrated balun and base station antenna suitable for 2G/3G/4G/5G mobile communication.
Background
With the development of 5G mobile communication technology, the traditional 2G/3G/4G has a supplementary communication mode which is coexisted with the 5G for a long time. A stable wave beam MIMO antenna unit with a working frequency range covering 2G/3G/4G/5G mobile communication is designed, so that the difficult problem of electromagnetic compatibility of a base station antenna can be solved, the installation space can be saved, and the operation cost can be reduced, thereby having great commercial value.
The traditional base station antenna usually covers 1.4-2.7GHz or 1.7-2.7GHz in working frequency band, and the working bandwidth and the radiation pattern can not meet the design requirement. The 5G antenna (3.5GHz, 26.5GHz, and 40GHz) can only support a single working frequency band, and the isolation and gain are far different from the requirements of the traditional base station antenna.
The design of a beam stabilizing MIMO antenna for 2G/3G/4G/5G mobile communication needs to meet the following requirements: 1. the working frequency band covers 1.71-3.6GHz, and the requirement of 2/3/4/5G mobile communication frequency band is met. 2. The dual-polarized radiation can support an MIMO mode. 3. The stable directional diagram, the gain and the half-power wave beam broadband change stably in the working bandwidth to ensure the uniform coverage of signals. 4. Compact size, simple structure, convenient installation and low cost.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a broadband integrated balun capable of expanding the working bandwidth of a base station antenna and a base station antenna, aiming at the defects existing in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
a broadband integrated balun, characterized by: the microstrip line is arranged on one surface of the dielectric substrate, and the metal strip is arranged on the other surface of the dielectric substrate; the metal strips are a first metal strip and a second metal strip which are arranged in a coplanar manner, an isolation gap is formed between the first metal strip and the second metal strip, and tooth-shaped gaps are formed in one sides of the first metal strip and one side of the second metal strip which form the isolation gap.
The microstrip line comprises a first microstrip section, a second microstrip section and a third microstrip section, the second microstrip section is connected with the first microstrip section and the second microstrip section, the first microstrip section is positioned on the back surface of the first metal strip, the third microstrip section is positioned on the back surface of the second metal strip, one end of the second microstrip section is positioned on the back surface of the first metal strip, and the other end of the second microstrip section is positioned on the back surface of the second metal strip; the first metal strip and the second metal strip are symmetrically distributed on two sides of the center of the second microstrip section, and the tooth-shaped slot starts at the coupling position of the microstrip line and the metal strips.
The tooth gap terminates at a distal end of the isolation gap.
The depth of the two sides of the tooth-shaped gap is the same and is about 0.02-0.05 lambda2Wherein λ is2At a vacuum wavelength of 3.5 GHz.
The shape of the tooth-shaped gap includes but is not limited to rectangle, semicircle and triangle.
An antenna element comprising a reflective ground, a balun element, a radiating element and a parasitic element, said parasitic element being secured above said radiating element by an insulating strut, said radiating element being secured to said reflective ground by said balun element, characterized in that: the balun unit is formed by vertically interleaving two broadband integrated baluns.
The parasitic unit is a parasitic array formed by N multiplied by N parasitic unit slices, wherein N is more than or equal to 2.
The diameter of the parasitic unit chip is 0.05-0.15 lambda1The distance between the parasitic chips is 0.1-0.25 lambda1
The parasitic array is fixed above the radiation unit, and the distance between the parasitic array and the radiation unit is 0.1-0.2 lambda1Wherein λ is1At a vacuum wavelength of 2.1 GHz.
The radiation unit is composed of a first radiation arm, a second radiation arm, a third radiation arm and a fourth radiation arm which are arranged on the surface of the dielectric substrate, the first radiation arm and the third radiation arm form + 45-degree polarized radiation, and the second radiation arm and the fourth radiation arm form-45-degree polarized radiation; the upper part of one broadband integrated balun is respectively welded with the first radiation arm and the third radiation arm, and + 45-degree polarized radiation is excited; the upper part of the other broadband integrated balun is respectively welded with the second radiation arm and the fourth radiation arm to excite-45-degree polarized radiation; the bottoms of the two broadband integrated baluns are reflectively soldered.
The invention has the following technical effects:
the broadband integrated balun and base station antenna has the advantages of wide bandwidth, high isolation, stable directional diagram and simple structure, and is specifically embodied in that:
(1) the working bandwidth of the invention covers 1.7-3.62GHz, and the invention can be simultaneously suitable for 2G/3G/4G/5G mobile communication.
(2) The invention has the advantages of high isolation (port isolation degree is more than 30dB), stable radiation wave beam, compact size, simple structure, convenient installation and low cost.
(3) According to the invention, the tooth-shaped slot is designed on the metal strip of the broadband integrated balun, the working bandwidth of the base station antenna is expanded from the impedance matching principle, the bandwidth (1.7-2.7GHz) of the traditional 2/3/4G dual-polarized antenna is enhanced to 1.7-3.6GHz, and the details refer to the figure 6.
(4) The invention designs and loads the parasitic array above the radiating element, improves the impedance matching characteristic within 1.7-2.7GHz by utilizing the near-field electromagnetic induction characteristic of the parasitic array in the low frequency band, improves the radiation characteristic within 3.4-3.5GHz by utilizing the far-field leading characteristic of the parasitic array in the high frequency band, has return loss less than-15 dB, gain 9.2 +/-0.6 dBi and half-power beam width 66 +/-4 degrees, and refers to the accompanying drawings for details 7 and 8.
(5) The invention has simple structure and does not need to design a complicated reflection ground. And a mature and stable structural form is adopted, so that the production convenience is ensured. Compared with the traditional 2/3/4G dual-polarized antenna, the aperture area of the invention is not increased.
Drawings
FIG. 1 is a three-dimensional structure diagram of a beam-stabilized MIMO antenna unit applicable to 2G/3G/4G/5G mobile communication according to the present invention;
FIG. 2 is a three-dimensional block diagram of the balun unit of the present invention;
FIG. 3 is a schematic diagram of a first broadband integrated balun;
FIG. 4 is a front view of a first broadband integrated balun;
FIG. 5 is a back view of a first broadband integrated balun;
FIG. 6 is a schematic diagram of a second broadband integrated balun;
FIG. 7 is a front view of a second broadband integrated balun;
FIG. 8 is a back view of a second broadband integrated balun;
fig. 9 is a plan view of a radiating element;
FIG. 10 is a plan view of a parasitic element;
fig. 11 is a diagram showing an input impedance of a conventional 2G/3G/4G dual-polarized antenna using a castellated short-circuited slot-line dual-polarized antenna.
Fig. 12 is a graph showing the in-band gain variation of an unloaded parasitic array dual-polarized antenna and a loaded parasitic array dual-polarized antenna (the present invention).
Fig. 13 is a diagram showing the variation of the half-power beam width in the band of the unloaded parasitic array dual-polarized antenna and the loaded parasitic array dual-polarized antenna (the invention).
Fig. 14 shows a return loss diagram of a conventional 2G/3G/4G dual-polarized antenna, a dual-polarized antenna using the tooth-shaped short-circuited slot line, and a dual-polarized antenna using the parasitic array (the present invention).
Detailed Description
Example 1
As shown in fig. 2 to 8, a wideband integrated balun includes a dielectric substrate 211, a microstrip line 212 and a metal strip, the microstrip line 212 is printed on the front surface of the dielectric substrate 211, and the metal strip 213 is printed on the back surface of the dielectric substrate 211. The metal strips are a first metal strip and a second metal strip which are arranged in a coplanar manner, an isolation gap is formed between the first metal strip and the second metal strip, and tooth-shaped gaps are formed in one sides of the first metal strip and one side of the second metal strip which form the isolation gap.
The 212 microstrip line includes a first microstrip segment 2121, a second microstrip segment 2122, and a third microstrip segment 2123, and the second microstrip segment 2122 connects the first microstrip segment 2121 and the second microstrip segment 2123.
The first microstrip section 2121 is located on the back surface of the first metal strip, the third microstrip section 2123 is located on the back surface of the second metal strip, one end of the second microstrip section 2122 is located on the back surface of the first metal strip, and the other end of the second microstrip section 2122 is located on the back surface of the second metal strip; the first metal strip and the second metal strip are symmetrically distributed on two sides of the center of the second microstrip section 2122, and the tooth-shaped slot starts from the coupling position of the microstrip line and the metal strip and ends at the tail end of the isolation slot.
The depth of the two sides of the tooth-shaped gap is the same, and is about 0.02-0.05 lambda2Wherein λ is2At a vacuum wavelength of 3.5 GHz.
The shape of the tooth-shaped gap includes but is not limited to rectangle, semicircle and triangle. The shape of the tooth-shaped gap meets the depth requirement, and the microstrip line 212 is not damaged, so that the same effect is achieved.
The tooth-shaped gap can compensate the imaginary part of the high-frequency input impedance of the antenna, and the impedance bandwidth of the antenna is improved. Fig. 11 shows the input impedance of a conventional 2/3/4G dual-polarized antenna and a dual-polarized antenna using the castellated short-circuited slot line. As can be seen from the figure, the input impedance of the dual-polarized antenna using the tooth-shaped short-circuited slot line significantly changes at high frequencies, compared to the conventional dual-polarized antenna.
Example 2
Fig. 1-3 show a beam-stabilized MIMO antenna unit for 2G/3G/4G/5G mobile communication, comprising a reflective ground 1, a balun element 2, a radiating element 3 and a parasitic array 4.
The parasitic array 4 is fixed above the radiating element 3 through an insulating support, and the radiating element 3 is fixed on the reflecting plate 1 through the balun element 2.
The parasitic array 4 is formed of a group of parasitic element arrays 42 printed on the surface of the dielectric substrate 41.
The radiation unit 3 is composed of a first radiation arm 31, a second radiation arm 32, a third radiation arm 33 and a fourth radiation arm 34 printed on the surface of the dielectric substrate, the first radiation arm 31 and the third radiation arm 33 constitute-45 ° polarized radiation, and the second radiation arm 32 and the fourth radiation arm 34 constitute +45 ° polarized radiation.
The balun unit 2 comprises a first wideband integrated balun 21 and a second wideband integrated balun 22, and the first wideband integrated balun 21 and the second wideband integrated balun 22 are vertically orthogonal to each other.
The first broadband integrated balun 21 comprises a first microstrip line 212 printed on the front side of a dielectric substrate 211 and two metal strips forming a first tooth-shaped short-circuit slot line 213 on the back side.
The second broadband integrated balun 22 comprises a second microstrip line 222 printed on the front side of the dielectric substrate 221 and two metal strips forming a second tooth-shaped short-circuited slot line 223 on the back side.
The upper part of the tooth-shaped short-circuit slot line 213 of the first broadband integrated balun 21 is respectively welded with the first radiation arm 31 and the third radiation arm 33, and + 45-degree polarized radiation is excited. The upper parts of the tooth-shaped short circuit slot lines 223 of the second broadband integrated balun 22 are respectively welded with the second radiation arm 32 and the fourth radiation arm 34, and-45-degree polarized radiation is excited. The bottoms of the first tooth-shaped short circuit slot line 213 and the second tooth-shaped short circuit slot line 223 are welded with the reflective ground 1.
The parasitic array 4 is a square array of 2 × 2 parasitic elements 41.
The parasitic element 41 is formed of a circular metal patch.
The green array 4 is fixed above the radiating element 3 at a distance of 18 mm.
The diameter of the parasitic element is 11m, and the distance between the parasitic elements is 15 mm. The parasitic array has electromagnetic induction characteristics in a low frequency band, so that impedance matching is improved; the parasitic array has far-field guiding characteristics in a high-frequency band, and a radiation pattern is improved. Fig. 12 and 13 show the variation of antenna gain and half-power beam width with frequency after the parasitic array is loaded. As can be seen from the figure, after the parasitic array is loaded, the in-band gain of the antenna is stabilized at 9.2 +/-0.9 dBi, and the half-power beam width is stabilized at 64.5 +/-6.5 DEG
The first radiating arm 31, the second radiating arm 32, the third radiating arm 33 and the fourth radiating arm 34 are solid octagonal metal patches.
The first tooth-shaped short-circuit slot line is composed of two coplanar metal strips 213, and the adjacent edges of the coplanar metal strips are etched with first tooth-shaped gaps 213A. The second tooth-shaped short-circuit slot line is composed of two coplanar metal strips 223, and second tooth-shaped gaps 223A are etched on the adjacent edges of the coplanar metal strips. The first tooth-shaped gap and the second tooth-shaped gap respectively change the characteristic impedance of the first tooth-shaped short-circuit slot line and the second tooth-shaped short-circuit slot line, the current shows that high-resistance characteristics are formed on the tooth-shaped short-circuit slot line, the current flowing to a reflecting ground through the tooth-shaped short-circuit slot line is cut off, and the equivalent circuit shows that the high-frequency impedance matching of the antenna is improved, and the working bandwidth of the antenna is expanded. Fig. 11 is a return loss diagram of a conventional 2G/3G/4G dual-polarized antenna, a dual-polarized antenna using the tooth-shaped short-circuited slot line, and a dual-polarized antenna using the parasitic array, as shown in fig. 14, compared with the conventional dual-polarized antenna, the bandwidth of the dual-polarized antenna using the tooth-shaped short-circuited slot line is widened from 1.7-2.7GHz (RL < 15dB) to 1.7-3.7GHz (RL < 12 dB); the dual polarized antenna impedance improves to 1.7-3.6GHz (RL < 15dB) using the parasitic array shown.
The first tooth-shaped slot 213A starts from the coupling position of the first microstrip line 212 and the first tooth-shaped short-circuit slot and ends at the connection position of the tooth-shaped short-circuit slot and the reflective ground 1.
The second tooth-shaped slot 223A starts from the coupling position of the second microstrip line 222 and the second tooth-shaped short-circuit slot line and ends at the connection position of the tooth-shaped short-circuit slot line and the reflective ground 1.
The depth H of the first tooth gap 213A and the second tooth gap 223A is 2.5 mm.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (7)

1. A broadband integrated balun, characterized by: the microstrip line is arranged on one surface of the dielectric substrate, and the metal strip is arranged on the other surface of the dielectric substrate; the metal strips are a first metal strip and a second metal strip which are arranged in a coplanar manner, an isolation gap is formed between the first metal strip and the second metal strip, and tooth-shaped gaps are formed at one sides of the first metal strip and one side of the second metal strip which form the isolation gap; the microstrip line comprises a first microstrip section, a second microstrip section and a third microstrip section, the second microstrip section is connected with the first microstrip section and the second microstrip section, the first microstrip section is positioned on the back surface of the first metal strip, the third microstrip section is positioned on the back surface of the second metal strip, one end of the second microstrip section is positioned on the back surface of the first metal strip, and the other end of the second microstrip section is positioned on the back surface of the second metal strip; the first metal strip and the second metal strip are symmetrically distributed on two sides of the center of the second microstrip section; the tooth-shaped gap starts fromThe coupling position of the microstrip line and the metal strip, the tooth-shaped gap is terminated at the tail end of the isolation gap, and the tail end is positioned at the starting end of the first microstrip section; the two sides of the tooth-shaped gap have the same depth, and the depth is 0.02-0.05 lambda2Wherein λ is2At a vacuum wavelength of 3.5 GHz.
2. The wideband integrated balun of claim 1, wherein: the shape of the tooth-shaped gap includes but is not limited to rectangle, semicircle and triangle.
3. An antenna element comprising a reflective ground, a balun element, a radiating element and a parasitic element, said parasitic element being secured above said radiating element by an insulating strut, said radiating element being secured to said reflective ground by said balun element, characterized in that: the balun unit is formed by vertically interleaving two broadband integrated baluns according to any one of claims 1-2.
4. The antenna element of claim 3, wherein said parasitic element is a parasitic array of N by N parasitic element patches, where N ≧ 2.
5. The antenna element of claim 4, wherein said parasitic element has a diameter of 0.05-0.15 λ1The distance between the parasitic chips is 0.1-0.25 lambda1Wherein λ is1At a vacuum wavelength of 2.1 GHz.
6. The antenna element of claim 5, wherein the parasitic array is fixed above the radiating element at a distance of 0.1-0.2 λ1
7. The antenna unit according to any of claims 3-6, wherein said radiating unit is comprised of a first radiating arm, a second radiating arm, a third radiating arm and a fourth radiating arm disposed on the surface of the dielectric substrate, said first radiating arm and said third radiating arm constituting 45 ° polarized radiation, said second radiating arm and said fourth radiating arm constituting 45 ° polarized radiation; the upper part of the broadband integrated balun is respectively welded with the first radiation arm and the third radiation arm to excite the radiation with 45 DEG polarization; the upper part of the other broadband integrated balun is respectively welded with the second radiation arm and the fourth radiation arm to excite-45-degree polarized radiation; the bottoms of the two broadband integrated baluns are reflectively soldered.
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PCT/CN2020/091693 WO2021073089A1 (en) 2019-10-18 2020-05-22 Broadband integrated balanced-to-unbalanced converter and antenna unit

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CN110911827B (en) * 2019-10-18 2022-03-29 东南大学 Broadband integrated balun and antenna unit
CN110707423A (en) * 2019-10-21 2020-01-17 扬州步微科技有限公司 Parasitic element for antenna element and antenna element
CN111653869B (en) * 2020-06-15 2022-09-13 广东工业大学 Patch loaded broadband dual-polarized base station antenna
CN114122691B (en) * 2021-11-16 2024-04-09 中信科移动通信技术股份有限公司 High frequency radiating unit
CN114709603B (en) * 2022-04-28 2024-04-12 摩比天线技术(深圳)有限公司 Radiating element and antenna system
CN114824764A (en) * 2022-05-28 2022-07-29 广东浩信通信科技有限公司 High-gain ultra-wideband dual-polarized directional oscillator
CN115051142B (en) * 2022-06-16 2023-08-22 华南理工大学 Multi-frequency base station antenna unit and communication equipment
CN115149255B (en) * 2022-06-24 2023-09-05 四川大学 Center sawtooth broadband microstrip antenna
CN115241659A (en) * 2022-06-27 2022-10-25 河南大学 High-isolation broadband tri-polarization MIMO antenna
CN115036704B (en) * 2022-06-30 2023-07-28 西安电子科技大学 Dual-frequency dual-polarized high-gain Fabry-Perot resonant cavity antenna
CN115173065B (en) * 2022-08-26 2023-08-04 华南理工大学 Multimode-fused broadband dual-polarized base station antenna and communication equipment

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