CN110908017B - Tunable band-stop filter based on photonic crystal - Google Patents
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/19—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
The invention discloses a tunable band-stop filter based on photonic crystals, which is mainly formed by periodically arranging two materials with different refractive indexes, namely a dielectric layer and a phase change layer, overlapping and combining the two materials, and the structural sizes of the same medium are completely the same. The principle of the filter is that when electromagnetic waves are vertically incident along the positive direction of the Z axis, the electromagnetic waves are reflected and refracted at the interface of the lamination layer for countless times, so that a very flat and nearly horizontal stop band, also called a photon forbidden band, is formed. Based on the photonic crystal, a phase change medium is used, so that the photon forbidden band of the photonic crystal generates blue shift. The filter has the greatest advantage that the electromagnetic characteristics of the device can be dynamically tunable. The stop band filtering effect is extremely good while the manufacturing is easy and the cost is low.
Description
Technical Field
The invention relates to the field of terahertz waveband electromagnetic wave filtering characteristics, in particular to a tunable band-stop filter based on photonic crystals.
Background
In recent years, great attention has been paid to innovative strategies for developing devices with stable optical characteristics. However, as the applications of nano-photonic devices and optoelectronic devices are deepened, the optical characteristics of the solid state have been disconnected from the practical applications in the aspects of integrated photonic chips, optical interconnections and even photonic integrated circuits. This requires introducing active features into the device to increase the dynamic tuning flexibility, so more and more researchers are beginning to focus on the tunable features of the device.
The concept of photonic crystals was proposed in 1987 by s.john and e.yablonovitch, respectively, and has attracted the attention of many researchers due to its unique and important optical properties. Photonic crystals are artificial materials made of periodic arrangements of media of different refractive indices. The photonic crystal can effectively control the propagation of light because the electromagnetic wave having a fundamental optical characteristic, a photonic band gap, falling in the band gap is forbidden to propagate, that is, the reflectivity of light in the band gap is 1. Based on this, many promising applications have emerged, such as high quality mirrors, hyper prisms, photonic crystal fibers, photonic crystal waveguides, high efficiency light emitting diodes, optical switches, sensors, nonlinear optics.
In order to realize devices with dynamic tunability, a lot of attempts and efforts are being made in many emerging schemes, such as the use of micro-electromechanical systems, materials with a significant response to external mechanical strain, semiconductor materials with electro/magneto-optical characteristics and liquid crystal inclusions. However, these schemes have difficulty achieving effective active tuning.
For example, the material used as described in the article (Ahmed, Shaban, & Aly,2017) is Lithium Niobate (LN), which, when connected to an electrode, although it also performs the tuning function, uses an ultra-high bias voltage, which is a difficult problem in practical applications. For another example, the material used in the article (Phys et al, 2017) is liquid crystal, and the device can achieve a better tuning function after being connected to an electrode, but the most important point is that the design and manufacture based on the liquid crystal hierarchy face the problems of high complexity and difficulty in integration, which is contrary to the future development direction.
On the other hand, recently, a simple solution has been extensively studied by using phase change materials, such as the popular Ge-Sb-Te series with tunable dielectric properties. Basically, GST is characterized by at least one amorphous and one crystalline (metallic) stable phase, and the transition between these states can be triggered thermally by electrical or optical pulses or by thermal annealing. In the case of electrical switches, reversible phase changes can occur on a sub-nanosecond time scale, which allows for ultra-fast switching. The mutual transformation of the two phases causes the relative dielectric constant to change correspondingly. As a result, it is essentially feasible to combine the phase change material of GST with a photonic crystal level to constitute an electrically or thermally reconfigurable device.
Therefore, the band-stop filter with simple manufacturing process, low cost and excellent stopband filtering effect can be better applied to complex electromagnetic environment.
Disclosure of Invention
In order to solve the problems of the prior art, the invention aims to provide a tunable band-stop filter based on photonic crystal, and Ge is used for filtering2Sb2Te5The phase change of (GST) enables tunable spectral behavior. Compared with the tunable super-surface device with the recent fire-heat abnormity, the tunable photonic crystal device has great advantages in dielectric loss. In terms of manufacturing process, the photonic crystal is simpler and lower in cost. And due to the unique optical characteristics of the tunable filter, the tunable filter can realize a wide-stop-band filtering tuning function with an excellent effect, and has a very excellent regulation and control effect on electromagnetic waves.
The invention is realized by at least one of the following technical schemes.
A novel band elimination filter based on one-dimensional photonic crystals is mainly formed by periodically arranging and mutually overlapping two materials with different refractive indexes, namely a dielectric layer and a phase change layer, and the structural sizes of the same medium are completely the same.
As a further technical scheme of the invention, the filter is formed by alternately stacking three dielectric layers and three phase change layers.
As a further technical scheme of the invention, the phase change layer is made of Ge2Sb2Te5In the amorphous state, its dielectric constant is εa11.3+0.01i, and has a dielectric constant ε in a crystalline statecI denotes an imaginary unit 24.5+1.8 i.
As a further technical proposal of the invention, the material used for the dielectric layer (10) is Si4N3The refractive index n is 1.84.
As a further technical scheme of the invention, the length of the phase change layer (11) is 300-400mm, the width is 200-300mm, and the height is 36-38 μm.
As a further technical scheme of the invention, the length of the dielectric layer (10) is 300-400mm, the width is 200-300mm, and the height is 67-69 μm.
As a further technical scheme of the invention, the material property of the phase change layer (11) is that the phase change layer keeps amorphous state under the normal temperature state.
As a further technical scheme of the invention, the material characteristic of the phase change layer (11) is that the phase change layer exceeds the critical temperature of an amorphous state under the action of heat/electric excitation, and the phase change layer is converted from the amorphous state to a crystalline state.
As a further technical scheme of the invention, the material characteristic of the dielectric layer (10) is that the self state is not changed along with the thermal/electrical stimulation.
The principle of the filter is that when electromagnetic waves are vertically incident along the positive direction of the Z axis, the electromagnetic waves are reflected and refracted at the interface of the lamination layer for countless times, so that a very flat and nearly horizontal stop band, also called a photon forbidden band, is formed. Based on the photonic crystal, a phase change medium is used, so that the photon forbidden band of the photonic crystal generates blue shift. The filter has the greatest advantage that the electromagnetic characteristics of the device can be dynamically tunable. The stop band filtering effect is extremely good while the manufacturing is easy and the cost is low.
The invention has the following beneficial effects:
(1) polarization independence. Due to the electromagnetic properties of photonic crystals, when electromagnetic waves are incident perpendicularly, the filtering effect in TE and TM modes is consistent, with polarization independence.
(2) And (4) wide stop band. After the electromagnetic wave is incident, countless reflections and refractions occur at the interface of the stack, thereby forming a very flat, nearly horizontal stop band, also called a photon forbidden band.
(3) And (4) ultrahigh tuning depth. Due to the existence of the phase change layer, when the filter is subjected to external heat/electric stimulation, the material can generate phase change and is changed from an amorphous state to a crystalline state, the macroscopically changed filtering characteristic is changed, and the stop band generates blue shift.
(4) Better stability of incident angle. Since the whole resonance structure has high symmetry, when the incident direction change of the electromagnetic wave is not particularly large, the filtering effect is not affected.
Drawings
FIG. 1 is a schematic diagram of the complete structure of a tunable band-stop filter based on photonic crystals according to the present embodiment;
FIG. 2 is a graph of the resonance of the TE and TM polarizations of the filter of FIG. 1;
FIG. 3 is a graph of the resonance of the filter of FIG. 1 in the amorphous and crystalline modes;
FIG. 4 is a graph of resonance at different angles of incidence for the TE mode of the filter of FIG. 1;
the reference signs are: 10-a dielectric layer; 11-phase change layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be more clearly and completely described below with reference to the drawings in the embodiments of the present invention.
A tunable band-stop filter based on photonic crystals is shown in FIG. 1, and the filter mainly comprises a six-layer structure, the whole structure is formed by alternately stacking dielectric layers 10 and phase change layers 11, and the structural dimensions of the same dielectric are completely the same. Both are geometrically identical except for the height difference.
According to the transmission matrix theory, the reflectivity of a single dielectric film is determined by the height and refractive index of the dielectric film. The decisive factors for the electromagnetic properties of this filter are then also the height and the refractive index of the dielectric layer 10 and the phase change layer 11.
Therefore, the dielectric layer 10 and the phase change layer 11 both have a resonance frequency of their own, and when the heights are adjusted so that the resonance frequencies of the two are the same, the filtering effect is excellent. And after the phase change layer 11 is subjected to phase change, the filter has better filtering effect.
After many times of simulation experiments to adjust the parameters, the length of the filter of this embodiment is 300 μm and the width is 200 μm. The height of the dielectric layer 10 is 67.93um, and the height of the phase change layer 11 is 37.02 um. The material used for the dielectric layer 10 is Si4N3The refractive index n is 1.84. The material used for the phase change layer 11 is Ge2Sb2Te5In the amorphous state, its dielectric constant is εa＝11.3+0.01i, and a dielectric constant ε in the crystalline statecI denotes an imaginary unit 24.5+1.8 i.
In this embodiment, when the electromagnetic wave is incident perpendicularly to the filter along the z-direction, the resonance graphs in the TE and TM modes shown in fig. 2 are obtained, and the stop band frequency range is 500-700 GHz. The resonance curves of the TE and TM modes coincide exactly because the photonic crystal itself has useful electromagnetic properties and is not affected by polarization modes at normal incidence of the electromagnetic wave. As is clear from the figure, the stopband filtering effect of this filter is excellent. First, the reflectivity within the stop band remains almost 0.92. Second, the frequency range of the stop band is wide. Third, the rising and falling edges of the stop band are very steep. It is clear that this filter is excellent both in bandwidth and in filtering effect.
Fig. 3 is a graph of the resonance of the filter in both the amorphous and crystalline modes. There are two stop band frequency ranges, which are 500-700GHz in the amorphous state and 360-560GHz in the crystalline state. The reflectivity of the stop band in the amorphous mode is 0.92, and the reflectivity of the stop band in the crystalline mode is 1. Also the rising and falling edges of the stop band in the amorphous mode are very steep. That is, when the phase change layer is subjected to external heat/electrical stimulation, the phase change layer undergoes a phase change from an amorphous state to a crystalline state. The filtering performance of the filter is changed accordingly, the stopband frequency range is subjected to blue shift, and the tuning rate reaches 28%, which is objective. This is because the dielectric constant of the phase change layer is changed according to the refractive index formula
(ε is the dielectric constant), the refractive index of the phase change layer also changes. That is, the resonant frequency corresponding to the phase change layer is changed, resulting in tuning of the filtering performance. And the performance of the filter is enhanced when the mode is changed, i.e. the reflectivity in the stop band frequency range is higher. This is also because the refractive index of the phase change layer changes, and the refractive index increases from 3.36 for the amorphous state to 4.95 for the crystalline state. Both of them and the refractive index n of the medium layer equal to 1.84The ratio becomes large, which in turn leads to high reflectance.
In practical applications, when an electromagnetic wave is incident on the surface of the filter, the electromagnetic wave is not normally incident exactly perpendicularly, and the electromagnetic wave has a certain oblique incident angle, so that the stability of the incident angle is an important performance for the filter. Fig. 4 is a graph of resonance curves of the TE mode of the filter at different incident angles, and the measured incident angle θ varies from 0 ° to 30 °. In the TE mode, the stopband frequency range of the 3 resonance curves of 0 ° to 30 ° is slightly reduced, but the filtering effect is excellent. On the whole, the incidence angle in the range of 0-30 degrees has little influence on the broadband filtering effect of the structure.
The photonic crystal broadband tunable filter has a great number of applications, such as being integrated into optoelectronic devices for use in photodetectors and optical switches, where the importance of the tunable characteristic of the filter is indisputable and the flexibility of the device is increased. The dielectric material photonic crystal can be used as a high-quality lossless electromagnetic reflector, the filter has great advantages in the field, firstly, the dielectric material photonic crystal has extremely low loss, and the adjustable characteristic is not comparable to that of other reflectors, so that the practicability of the device is greatly improved. The traditional microwave antenna preparation method is to directly prepare the antenna on a dielectric substrate, so that a large amount of energy is absorbed by the antenna substrate, and the substrate is heated. The photonic crystal device can be designed aiming at a certain frequency band, so that the problem can be perfectly solved, lossless total reflection can be realized by taking the photonic crystal device as a substrate, electromagnetic wave radiation to a human body can be effectively reduced, and most importantly, the adjustable characteristic of the photonic crystal device is exerted in the field, so that the switching of a plurality of frequency bands can be realized, and the practicability is enhanced.
The tunable band-stop filter based on the photonic crystal achieves an excellent filtering effect through the excellent electromagnetic characteristic of the photonic crystal, and the designed structure enables the filter to achieve a good broadband filtering effect in both TE and TM modes and has good incident angle stability. Most importantly, the filter can realize active tuning of the filtering performance, which greatly enhances the application in real life. The whole structure has the characteristics of wide stop band, insensitive polarization, stable incident angle, flexible design, low manufacturing cost, good filtering effect and the like.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are intended to further illustrate the principles of the invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention, which is intended to be protected by the appended claims. The scope of the invention is defined by the claims and their equivalents.
Claims (1)
1. The tunable band-stop filter based on the photonic crystal is characterized by mainly comprising six layers of structures, wherein the filter is formed by alternately stacking three dielectric layers (10) and three phase change layers (11), and the structural sizes of the same dielectric are completely the same; the material used for the phase change layer (11) is Ge2Sb2Te5The material used for the dielectric layer (10) is Si4N3The material characteristic of the phase change layer (11) is that the material exceeds the critical temperature of an amorphous state under the action of heat/electric excitation, and the amorphous state is converted into a crystalline state;
the material used for the phase change layer (11) is Ge2Sb2Te5In the amorphous state, its dielectric constant is εa11.3+0.01i, and has a dielectric constant ε in a crystalline statec24.5+1.8i, i represents an imaginary unit; the length of the phase change layer (11) is 300-400mm, the width is 200-300mm, and the height is 36-38 μm; the material characteristic of the phase change layer (11) is that the amorphous state is kept under the normal temperature state;
the material used for the dielectric layer (10) is Si4N3The refractive index n is 1.84, the length is 400mm, the width is 200 mm and 300mm, the height is 67-69 mu m, and the material characteristic of the dielectric layer (10) does not change the self state along with the thermal/electrical stimulation.
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| CN201911208946.6A CN110908017B (en) | 2019-11-30 | 2019-11-30 | Tunable band-stop filter based on photonic crystal |
| PCT/CN2020/077187 WO2021103335A1 (en) | 2019-11-30 | 2020-02-28 | Photonic crystal-based tunable band stop filter |
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| CN112415785A (en) * | 2020-10-10 | 2021-02-26 | 浙江大学 | Spatial light modulation system based on phase change material |
| CN112363329B (en) * | 2020-12-07 | 2022-11-29 | 山东高等技术研究院 | Dull and stereotyped structure based on transmission characteristic can be regulated and control to phase change material |
| CN112731690B (en) * | 2020-12-17 | 2023-03-31 | 南京理工大学 | Terahertz waveband tunable multifunctional beam regulation and control device and tuning method thereof |
| CN113031313A (en) * | 2021-03-19 | 2021-06-25 | 浙江大学 | Adjustable infrared camouflage and stealth film based on phase-change material |
| CN114660680B (en) * | 2022-03-22 | 2023-08-15 | 广东工业大学 | Photonic crystal structure design method with topological interface state |
| CN117784449B (en) * | 2023-12-27 | 2024-05-28 | 华中科技大学 | Filtering structure based on phase change material |
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| CN103091777A (en) * | 2013-02-19 | 2013-05-08 | 上海理工大学 | Multiple-filter wave tunable band-pass filter and adjustment method |
| CN209056607U (en) * | 2018-08-08 | 2019-07-02 | 南京邮电大学 | A kind of electromagnetism Meta Materials wave absorbing device based on vanadium dioxide phase transformation regulation |
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| US6859304B2 (en) * | 2002-08-09 | 2005-02-22 | Energy Conversion Devices, Inc. | Photonic crystals and devices having tunability and switchability |
| CN1996100A (en) * | 2006-12-30 | 2007-07-11 | 中国科学院光电技术研究所 | Method for generating dynamic photonic crystal by temperature-controlled one-dimensional photonic crystal |
| CN104155775A (en) * | 2014-06-05 | 2014-11-19 | 哈尔滨工程大学 | Tunable asymmetric-transmission optical device based on phase-change material |
| US10371570B2 (en) * | 2017-01-31 | 2019-08-06 | Raytheon Company | Burnout protection for optical sensors |
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| CN103091777A (en) * | 2013-02-19 | 2013-05-08 | 上海理工大学 | Multiple-filter wave tunable band-pass filter and adjustment method |
| CN209056607U (en) * | 2018-08-08 | 2019-07-02 | 南京邮电大学 | A kind of electromagnetism Meta Materials wave absorbing device based on vanadium dioxide phase transformation regulation |
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| Title |
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| Tunable reflective color filters based on asymmetric Fabry-Perot cavities employing ultrathin Ge2Sb2Te5 as a broadband absorber;Feng Liu et al;《Applied Optics》;20181017;第57卷(第30期);第9041页，附图1 * |
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