CN110890833A - Parallel IGBT driving method of power electronic equipment - Google Patents
Parallel IGBT driving method of power electronic equipment Download PDFInfo
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- CN110890833A CN110890833A CN201911130597.0A CN201911130597A CN110890833A CN 110890833 A CN110890833 A CN 110890833A CN 201911130597 A CN201911130597 A CN 201911130597A CN 110890833 A CN110890833 A CN 110890833A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention discloses a parallel IGBT driving method of power electronic equipment, which comprises the steps of configuring the driving number of parallel IGBTs, selecting the driving connection mode of the parallel IGBTs, setting the gate voltage and the driving resistance of the IGBT, and determining the graded turn-off mode of the IGBT. The driving scheme of the invention does not need optical device isolation, ensures the non-delay synchronous driving of the parallel IGBT devices, and inhibits static and dynamic non-uniform current; the single IGBT drives the gate voltage enhancement, the driving resistance setting, the graded turn-off control and the like, the on-off current capability of the single IGBT is greatly improved, the di/dt and the overvoltage of the IGBT in the turn-off process are reduced, and the reliable work of the IGBT is ensured. The IGBT parallel connection valve group is simple in driving, flexible in control and rapid in action, the number of the IGBT parallel connections can be flexibly configured according to a current target value, the capacity utilization rate of a single IGBT is high, and the IGBT parallel connection valve group is suitable for occasions of switching on or switching off valve groups with large currents of different voltage levels.
Description
Technical Field
The invention belongs to the technical field of power electronics, and particularly relates to a parallel IGBT driving method of power electronic equipment.
Background
The power electronic equipment is an electrical equipment for converting electric energy based on a fully-controlled power semiconductor device, is formed by connecting a plurality of subunit modules in series and parallel, is monitored and controlled by a control device, and is a core element for constructing high-power electronic equipment such as a flexible direct-current converter valve, a direct-current breaker, a static synchronous compensator and the like.
Power electronic equipment manufactured based on a power device valve group and a control device is widely applied to various scenes such as power transmission and distribution grids of various voltage levels, various industrial and mining enterprises, wind power and photovoltaic power stations, direct-current power transmission converter stations and the like; in order to ensure the effectiveness, stability, reliability and safety of the power device valve bank in application, a driving method of a power electronic device needs to be designed to ensure the operation performance of the power electronic device under various working conditions.
With the continuous improvement of current grades, the power electronic equipment needs to be formed by connecting a plurality of power device valve banks in parallel, and high requirements are provided for the driving technology of the power electronic devices. The existing multi-channel IGBT driving scheme generally adopts a framework that one central control board controls a plurality of driving boards through optical fibers, and also adopts a scheme that a single driving board of an integrated optical coupling isolation device is adopted. Due to the difference of parameters of the optical isolation devices, the transmission time jitter is large, and the method is not suitable for occasions with high requirements on synchronism. In addition, the existing single-path IGBT driving technology is generally suitable for the working condition of frequently switching on and switching off the IGBT, but is not suitable for the working condition of occasionally switching on or switching off large current, and the IGBT switching-off capacity needs to be improved and optimized.
The present invention provides a method for driving an IGBT of a power electronic device to solve the above problems.
Disclosure of Invention
The invention aims to provide a parallel IGBT driving technology of power electronic equipment, which can safely and reliably drive a plurality of paths of IGBT devices in the application occasions of large current conduction or disconnection and ensure the normal operation of the power electronic equipment and the internal devices thereof.
In order to achieve the above purpose, the solution of the invention is:
a parallel IGBT driving method of power electronic equipment comprises the following steps:
step 1: configuring the parallel number and the driving output number of the parallel IGBTs;
step 2: selecting a driving connection mode of the parallel IGBT, and driving the interior to be directly electrically connected;
and step 3: setting IGBT gate voltage and driving resistance, adjusting forward gate voltage to 15V-25V, increasing driving resistance and prolonging switching process;
and 4, step 4: the IGBT adopts a step-by-step turn-off mode to determine the level setting in the step-by-step turn-off process.
Further, in the step 1, the number of parallel IGBTs and the number of drive outputs are determined according to the current value of the on or off of the device and the maximum value of the on or off current of a single IGBT.
Further, the selection of the driving connection mode of the parallel IGBT in step 2 specifically includes adopting a direct gate driving mode or a non-direct gate driving mode.
Further, the gate voltage introduces at least two different levels during the turn-off process in step 4.
After the scheme is adopted, the invention has the beneficial effects that:
(1) the IGBT parallel driving scheme can flexibly configure the number of parallel connection of the IGBTs according to a target value of on-off current and has multi-path IGBT synchronous driving capability;
(2) the IGBT parallel driving scheme does not need optical couplers or optical fiber isolation, ensures non-delay synchronous driving of parallel IGBT devices, and inhibits static and dynamic non-uniform current;
(3) the IGBT driving method has the advantages that the IGBT driving method greatly improves the conducting and turning-off capacity of a single IGBT and reduces di/dt and overvoltage of the IGBT turning-off process through a gate voltage enhancement, driving resistance setting and graded turning-off control method;
(4) the IGBT driving scheme is simple, flexible to control and quick in action, ensures reliable operation of the IGBT, and is suitable for occasions where large-current valve groups of different voltage grades are switched on or off.
Drawings
Fig. 1 illustrates a parallel IGBT driving method for power electronic devices according to the present invention;
fig. 2 is a power electronic device topology to which the present invention is applicable.
Detailed Description
The technical solution and the advantages of the present invention will be described in detail with reference to the accompanying drawings.
With the continuous improvement of current grades, the power electronic equipment needs a plurality of IGBTs to be directly connected in parallel, and the current conducting or cutting-off capacity of the equipment is improved in a parallel connection mode. Fig. 2 is a valve group topology for a parallel IGBT driving method of a power electronic device according to the present invention. The valve group comprises at least two parallel IGBTs, and the number of the parallel IGBTs is closely related to the current parameter of the device. In order to better control the parallel IGBT devices, a special driving board card needs to be configured as a control interface of the IGBT.
Fig. 1 shows an IGBT driving method for the power electronic device topology, which includes the following steps:
step 1: the number of parallel IGBTs and the number of drive outputs are configured.
And determining the parallel connection number and the driving output number of the IGBTs according to the current value of the power electronic equipment which is switched on or switched off and the maximum value of the current which is switched on or switched off by the single IGBT. Taking a direct current breaker as an example, assuming that the maximum breaking current requirement is not less than 25kA, and the rated current of the current commercial crimping type IGBT is at most 3kA, a single IGBT device cannot meet the electrical requirement. Therefore, a plurality of IGBT devices are required to be connected in parallel and driven, and the target value of the switching-off current 25kA is realized.
Step 2: and selecting a driving connection mode of the parallel IGBT to drive the interior to be directly electrically connected.
The connection mode of IGBT parallel drive is selected, the interior of the drive is directly electrically connected, and no optical device is isolated. The IGBT parallel driving scheme can adopt a direct grid driving mode or a non-direct grid driving mode, optical couplers or optical fiber isolation is not needed in the driving, the non-delay and synchronism of multi-path IGBT driving output are guaranteed, and static and dynamic non-uniform currents caused by asynchronous driving are restrained.
And step 3: and setting the IGBT gate voltage and the driving resistor, regulating the forward gate voltage to a range of 15V to 25V, increasing the driving resistor and prolonging the switching process.
The IGBT gate voltage and the driving resistor are arranged, and through the arrangement of the forward gate voltage enhancement and the driving resistor, the through-current and turn-off capacity of a single IGBT device is improved. In conventional power electronics, the forward gate voltage of the IGBT drive is typically set to 15V, with appropriate drive resistance to ensure a compromise between switching speed and losses. According to the invention, by properly increasing the forward gate voltage and the driving resistance of the IGBT, the desaturation capacity of a single IGBT device can be effectively improved, the turn-off time is delayed, the turn-off di/dt is reduced, and the turn-on and turn-off capacity of the IGBT is improved to 4-5 times of the rated current.
And 4, step 4: the IGBT adopts a step-by-step turn-off mode to determine the level setting in the step-by-step turn-off process.
And determining the IGBT stepped turn-off mode, and providing different stages of at least two levels for the gate pole in the turn-off process. In conventional power electronics, the IGBT-driven gate voltage switches directly from a positive voltage to a negative voltage during turn-off. The graded turn-off mode requires that at least two different levels are introduced into the gate voltage in the turn-off process, so that the turn-off process time is prolonged, and the current di/dt in the turn-off process is reduced. The turn-off mode is suitable for the working conditions of large-current turn-on and turn-off.
By the IGBT driving method, the maximum on and off current of an IGBT device with 3kA of rated current can be at least increased to 15kA, and the on and off capacity of at least 25kA current can be realized only by connecting 2 IGBTs in parallel through a non-delay parallel driving scheme.
By adopting the driving scheme of the invention, the isolation of optical devices is not needed, the non-delay synchronous driving of the parallel IGBT devices is ensured, and the static and dynamic non-uniform currents are inhibited; the single IGBT drives the gate voltage enhancement, the driving resistance setting, the graded turn-off control and the like, so that the turn-off capability of the single IGBT is greatly improved, the di/dt and the overvoltage of the turn-off process of the IGBT are reduced, and the reliable operation of the IGBT is ensured. The invention has simple driving, flexible control and rapid action, can flexibly configure the parallel connection number of the IGBTs according to the target value of the turn-off current, has high capability utilization rate of a single IGBT and is suitable for occasions of large-current turn-off valve sets with different voltage grades.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.
Claims (4)
1. A parallel IGBT driving method of power electronic equipment is characterized by comprising the following steps:
step 1: configuring the parallel number and the driving output number of the parallel IGBTs;
step 2: selecting a driving connection mode of the parallel IGBT, and driving the interior to be directly electrically connected;
and step 3: setting IGBT gate voltage and driving resistance, adjusting forward gate voltage to 15V-25V, increasing driving resistance and prolonging switching process;
and 4, step 4: the IGBT adopts a step-by-step turn-off mode to determine the level setting in the step-by-step turn-off process.
2. The parallel IGBT driving method of a power electronic device according to claim 1, characterized in that: in the step 1, according to the current value of the on or off of the equipment and the maximum value of the on or off current of a single IGBT, the number of parallel connection of the IGBTs and the number of drive outputs are determined.
3. The parallel IGBT drive connection method of a power electronic device according to claim 1, characterized in that: the selection of the driving connection mode of the parallel IGBT in step 2 specifically includes adopting a direct gate driving or a non-direct gate driving mode.
4. The parallel IGBT driving method of a power electronic device according to claim 1, characterized in that: in the step 4, at least two different levels are introduced into the gate voltage in the turn-off process.
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| CN201911130597.0A CN110890833A (en) | 2019-11-19 | 2019-11-19 | Parallel IGBT driving method of power electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111464007A (en) * | 2020-05-13 | 2020-07-28 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07163137A (en) * | 1993-12-01 | 1995-06-23 | Fuji Electric Co Ltd | Gate drive circuit for igbts connected in parallel |
| CN204068676U (en) * | 2014-09-04 | 2014-12-31 | 秦皇岛市博盛电子有限责任公司 | A kind of high-power IGBT parallel drive frequency converter |
| CN107565802A (en) * | 2017-08-25 | 2018-01-09 | 北京精密机电控制设备研究所 | A kind of flow equalizing circuit for high-power parallel IGBT module |
| US20190273494A1 (en) * | 2016-11-25 | 2019-09-05 | Denso Corporation | Gate driving device |
| CN110365196A (en) * | 2019-07-23 | 2019-10-22 | 中车青岛四方车辆研究所有限公司 | Three level integral type SiC-Mosfet drive systems and drive control method |
-
2019
- 2019-11-19 CN CN201911130597.0A patent/CN110890833A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07163137A (en) * | 1993-12-01 | 1995-06-23 | Fuji Electric Co Ltd | Gate drive circuit for igbts connected in parallel |
| CN204068676U (en) * | 2014-09-04 | 2014-12-31 | 秦皇岛市博盛电子有限责任公司 | A kind of high-power IGBT parallel drive frequency converter |
| US20190273494A1 (en) * | 2016-11-25 | 2019-09-05 | Denso Corporation | Gate driving device |
| CN107565802A (en) * | 2017-08-25 | 2018-01-09 | 北京精密机电控制设备研究所 | A kind of flow equalizing circuit for high-power parallel IGBT module |
| CN110365196A (en) * | 2019-07-23 | 2019-10-22 | 中车青岛四方车辆研究所有限公司 | Three level integral type SiC-Mosfet drive systems and drive control method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111464007A (en) * | 2020-05-13 | 2020-07-28 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
| CN111464007B (en) * | 2020-05-13 | 2022-05-24 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
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Application publication date: 20200317 |
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