CN110888472A - Temperature control circuit based on semiconductor technology - Google Patents
Temperature control circuit based on semiconductor technology Download PDFInfo
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- CN110888472A CN110888472A CN201811057470.6A CN201811057470A CN110888472A CN 110888472 A CN110888472 A CN 110888472A CN 201811057470 A CN201811057470 A CN 201811057470A CN 110888472 A CN110888472 A CN 110888472A
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- resistor
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
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- Control Of Temperature (AREA)
Abstract
The invention discloses a temperature control circuit based on a semiconductor technology, which comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is respectively connected with one ends of a resistor R7, the heating sheet RL and 220V alternating current, the other end of the capacitor C1 is respectively connected with the anode of a diode D1 and the other end of a resistor R7, the other end of the heating sheet RL is connected with a T1 pole of the bidirectional silicon controlled rectifier VS2, and the cathode of the diode D1 is respectively connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and a resistor. The temperature control circuit based on the semiconductor technology is controlled by discrete elements such as triodes and the like, so that the temperature control is effectively realized, the temperature of a device adopting the temperature control circuit is kept in a certain range, the control precision is higher, the temperature control circuit has an acousto-optic warning function, the circuit structure is simple, the cost is low, and the temperature control circuit is suitable for devices such as a water heater, a water dispenser and the like.
Description
Technical Field
The invention relates to a control circuit, in particular to a temperature control circuit based on a semiconductor technology.
Background
The temperature controller is a series of automatic control elements which are physically deformed in a switch according to the temperature change of a working environment so as to generate certain special effects and generate on or off actions, and is also called a temperature control switch, a temperature protector and a temperature controller, and is called as the temperature controller for short. Or the temperature protector transmits the temperature to the temperature controller, and the temperature controller sends out a switching command, so that the operation of the equipment is controlled to achieve the ideal temperature and energy-saving effect.
With the development of science and technology, temperature control circuits have been used in many fields in people's daily life, however, although the temperature control circuits can be very simple, most of simple temperature control circuits cannot achieve relatively precise control, can only achieve temperature control simply, and have limited functions; therefore, most of the existing temperature control circuits are controlled by programmable logic devices such as a single chip microcomputer and the like, the cost is high, the circuit structure is complex, and the cost is greatly improved.
Disclosure of Invention
The present invention is directed to a low-cost temperature control circuit based on semiconductor technology, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
a temperature control circuit based on a semiconductor technology comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is connected with one end of a resistor R7, one end of the heating sheet RL and one end of 220V alternating current respectively, the other end of the capacitor C1 is connected with the anode of a diode D1 and the other end of a resistor R7 respectively, the other end of the heating sheet RL is connected with the T1 pole of the bidirectional silicon controlled rectifier VS2, the cathode of the diode D1 is connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and a resistor R1 respectively, the other end of the resistor R1 is connected with a resistor R2 and a resistor R2 respectively, the other end of the resistor R2 is connected with a resistor R4, a relay K contact K-1 and a resistor R6 respectively, the other end of the resistor R87428 is connected, A T2 pole of a bidirectional thyristor VS2, a diode VD positive pole, a K pole of a unidirectional thyristor VS, an emitter of a triode VT2, a capacitor C2, one end of a potentiometer RP1 and a capacitor C3, the other end of the capacitor C3 is respectively connected with the other end of a resistor R4 and a G pole of the unidirectional thyristor VS1, an A pole of the unidirectional thyristor VS1 is connected with a light-emitting diode LED negative pole, the positive pole of the light-emitting diode LED is connected with the other end of a relay J coil, the collector of the triode VT2 is respectively connected with the other end of the resistor R8 and the G pole of the bidirectional triode VS2, the base of the triode VT2 is connected with the resistor R5, the other end of the resistor R5 is respectively connected with the other end of the capacitor C2 and the negative pole of the diode D2, the positive pole of the diode D2 is respectively connected with the other end of the relay K contact K-1, the relay K contact K-2, the sliding sheet of the potentiometer RP1 and the other end of the potentiometer RP1, and the other end of the relay K contact K-2 is connected with the other end of.
As a further scheme of the invention: and the diode VD is a voltage stabilizing diode.
As a further scheme of the invention: the relay K contact K-1 is a normally closed contact.
As a further scheme of the invention: and the relay K contact K-2 is a normally open contact.
As a still further scheme of the invention: the resistor R2 and the resistor R3 are both PTC resistors.
Compared with the prior art, the invention has the beneficial effects that: the temperature control circuit based on the semiconductor technology is controlled by discrete elements such as triodes and the like, so that the temperature control is effectively realized, the temperature of a device adopting the temperature control circuit is kept in a certain range, the control precision is higher, the temperature control circuit has an acousto-optic warning function, the circuit structure is simple, the cost is low, and the temperature control circuit is suitable for devices such as a water heater, a water dispenser and the like.
Drawings
Fig. 1 is a circuit diagram of a temperature control circuit based on semiconductor technology.
Fig. 2 is a circuit diagram of a second embodiment of a temperature control circuit based on semiconductor technology.
Fig. 3 is a pin diagram of a unidirectional thyristor in a temperature control circuit based on semiconductor technology.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1: referring to fig. 1, in an embodiment of the present invention, a temperature control circuit based on a semiconductor technology includes a capacitor C1, a unidirectional thyristor VS1, a bidirectional thyristor VS2, a heater RL, a diode D1, and a triode VT1, one end of the capacitor C1 is connected to one end of ac power of a resistor R7, the other end of the capacitor C1 is connected to the other end of a diode D1 and the other end of a resistor R7, the other end of the heater RL is connected to a T1 pole of the bidirectional thyristor VS2, the negative pole of the diode D1 is connected to the negative pole of a diode VD, a relay J coil, a resistor R8, a buzzer B, and a resistor R1, the other end of the resistor R1 is connected to one end of a resistor R2 and a resistor R3, the other end of the resistor R2 is connected to the resistor R4, the relay K contact K-1, and the resistor R6, the other end of the resistor R6 is connected to the base of a triode VT1, a collector, A T2 pole of a bidirectional thyristor VS2, a diode VD positive pole, a K pole of a unidirectional thyristor VS, an emitter of a triode VT2, a capacitor C2, one end of a potentiometer RP1 and a capacitor C3, the other end of the capacitor C3 is respectively connected with the other end of a resistor R4 and a G pole of the unidirectional thyristor VS1, an A pole of the unidirectional thyristor VS1 is connected with a light-emitting diode LED negative pole, the positive pole of the light-emitting diode LED is connected with the other end of a relay J coil, the collector of the triode VT2 is respectively connected with the other end of the resistor R8 and the G pole of the bidirectional thyristor VS2, the base of the triode VT2 is connected with the resistor R5, the other end of the resistor R5 is respectively connected with the other end of the capacitor C2 and the negative pole of the diode D2, the positive pole of the diode D2 is respectively connected with the other end of the relay K contact K-1, the relay K contact K-2, the sliding sheet of the potentiometer RP1 and the other end of the potentiometer RP1, and the other end of the relay K contact K-2 is connected with the other end of; the diode VD is a voltage stabilizing diode; the relay K contact K-1 is a normally closed contact; the relay K contact K-2 is a normally open contact; the resistor R2 and the resistor R3 are both PTC resistors.
After 220V alternating current is switched on, the temperature on the PTC resistors R2 and R3 is lower, the resistance values are quite large, the triodes VT1 and VT2 are both cut off, VS1 is cut off, VS2 is conducted, the heating sheet RL is electrified to work, when the temperature in a device adopting the circuit reaches the Curie point of R2 and R3, the resistance values of R2 and R3 are reduced (assuming that the Curie point of R2 is 100 ℃ and the Curie point of R3 is 65 ℃), the triodes VT1 and VT2 are firstly conducted, VS1 is conducted due to the delay action of R4 and C3, VT1 is conducted to enable a buzzer BL to work in an alarm mode, VT2 is conducted to cut off VS 9, the heating sheet RL is powered off, when the temperature in the device adopting the circuit is lower than 100 ℃, VT1 is cut off, the heating process is finished, VS1 is conducted to enable an LED to emit light, a coil K of a direct current relay is powered on, K68653 is switched off, and K-1 does not work, and K-2 is switched on to enter a heat preservation. In order to prevent the K contact from instantaneously cutting off the base bias voltage of VT2 in the conversion process, the VT2 is well conducted by the electric energy stored by the capacitor C2; when the temperature in the device adopting the circuit of the invention is reduced to below 65 ℃, the resistance value of R3 is increased (the temperature is lower than the Curie point), VT2 is cut off, VS2 is conducted again, and the heating sheet RL is electrified again for working, and the working is repeated so as to maintain the temperature in the device adopting the circuit of the invention to be about 65 ℃.
Example 2: fig. 2 is a circuit diagram of an embodiment 2 of the present invention, and the embodiment 2 lacks a buzzer B and has no sound alarm function, but can also give out a light alarm, compared with the embodiment 1.
In conclusion, the temperature control circuit based on the semiconductor technology is controlled by discrete elements such as the triode and the like, so that the temperature control is effectively realized, the temperature of a device adopting the temperature control circuit is kept in a certain range, the control precision is higher, the temperature control circuit has an acousto-optic warning function, the circuit structure is simple, the cost is low, and the temperature control circuit is suitable for devices such as a water heater, a water dispenser and the like.
Claims (7)
1. A temperature control circuit based on semiconductor technology comprises a capacitor C1, a unidirectional silicon controlled rectifier VS1, a bidirectional silicon controlled rectifier VS2, a heating sheet RL, a diode D1 and a triode VT1, wherein one end of the capacitor C1 is connected with one end of a resistor R7, one end of the heating sheet RL and one end of 220V alternating current respectively, the other end of the capacitor C1 is connected with the anode of a diode D1 and the other end of a resistor R7 respectively, the other end of the heating sheet RL is connected with the T1 pole of the bidirectional silicon controlled rectifier VS2, the cathode of the diode D1 is connected with the cathode of a diode VD, a relay J coil, a resistor R8, a buzzer B and the resistor R1 respectively, the temperature control circuit is characterized in that the other end of the resistor R1 is connected with a resistor R2 and a resistor R3 respectively, the other end of the resistor R2 is connected with a resistor R53, a relay K contact K-1 and a resistor R6 respectively, the other end of the resistor R86, The LED driving circuit comprises a T2 pole of a bidirectional thyristor VS2, a diode VD positive pole, a K pole of a unidirectional thyristor VS, an emitter of a triode VT2, a capacitor C2, one end of a potentiometer RP1 and a capacitor C3, the other end of the capacitor C3 is connected with the other end of a resistor R4 and a G pole of the unidirectional thyristor VS1 respectively, an A pole of the unidirectional thyristor VS1 is connected with a cathode of a light-emitting diode LED, and the positive pole of the light-emitting diode LED is connected with the other end of a coil of a relay J.
2. The semiconductor-technology-based temperature control circuit according to claim 1, wherein the collector of the transistor VT2 is connected to the other end of the resistor R8 and the G pole of the triac VS 2.
3. The temperature control circuit based on semiconductor technology as claimed in claim 1 or 2, wherein the base of the triode VT2 is connected with a resistor R5, the other end of the resistor R5 is respectively connected with the other end of a capacitor C2 and the cathode of a diode D2, the anode of the diode D2 is respectively connected with the other ends of a relay K contact K-1, a relay K contact K-2, a potentiometer RP1 sliding sheet and a potentiometer RP1, and the other end of the relay K contact K-1 is connected with the other end of the resistor R3.
4. The semiconductor-technology-based temperature control circuit according to claim 1, wherein the diode VD is a zener diode.
5. The semiconductor technology based temperature control circuit according to claim 3, wherein the relay K contact K-1 is a normally closed contact.
6. The semiconductor technology based temperature control circuit according to claim 3, wherein the relay K contact K-2 is a normally open contact.
7. Temperature control circuit based on semiconductor technology according to claim 1, characterized in that the resistor R2 and the resistor R3 are both PTC resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811057470.6A CN110888472A (en) | 2018-09-11 | 2018-09-11 | Temperature control circuit based on semiconductor technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811057470.6A CN110888472A (en) | 2018-09-11 | 2018-09-11 | Temperature control circuit based on semiconductor technology |
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| Publication Number | Publication Date |
|---|---|
| CN110888472A true CN110888472A (en) | 2020-03-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811057470.6A Pending CN110888472A (en) | 2018-09-11 | 2018-09-11 | Temperature control circuit based on semiconductor technology |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2237208Y (en) * | 1995-09-21 | 1996-10-09 | 钱天国 | Electronic temp. controller |
| JP2005165630A (en) * | 2003-12-02 | 2005-06-23 | Toyo Commun Equip Co Ltd | Temperature control circuit and homeothermal chamber type piezoelectric oscillator |
| CN201352321Y (en) * | 2008-12-19 | 2009-11-25 | 中兵光电科技股份有限公司 | Temperature control circuit for constant temperature micro-machined accelerometer |
| CN101887278A (en) * | 2010-04-28 | 2010-11-17 | 周玉林 | Multipurpose thermostat controller |
| CN201936209U (en) * | 2010-12-24 | 2011-08-17 | 程小莉 | Automatic heating controller for water temperature |
| CN203705991U (en) * | 2013-12-20 | 2014-07-09 | 重庆市永川区益锐机械有限责任公司 | Automatic heat-preservation heating circuit |
| CN205566253U (en) * | 2016-04-21 | 2016-09-07 | 象山搏远智能科技有限公司 | Intelligence temperature detect switch |
-
2018
- 2018-09-11 CN CN201811057470.6A patent/CN110888472A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2237208Y (en) * | 1995-09-21 | 1996-10-09 | 钱天国 | Electronic temp. controller |
| JP2005165630A (en) * | 2003-12-02 | 2005-06-23 | Toyo Commun Equip Co Ltd | Temperature control circuit and homeothermal chamber type piezoelectric oscillator |
| CN201352321Y (en) * | 2008-12-19 | 2009-11-25 | 中兵光电科技股份有限公司 | Temperature control circuit for constant temperature micro-machined accelerometer |
| CN101887278A (en) * | 2010-04-28 | 2010-11-17 | 周玉林 | Multipurpose thermostat controller |
| CN201936209U (en) * | 2010-12-24 | 2011-08-17 | 程小莉 | Automatic heating controller for water temperature |
| CN203705991U (en) * | 2013-12-20 | 2014-07-09 | 重庆市永川区益锐机械有限责任公司 | Automatic heat-preservation heating circuit |
| CN205566253U (en) * | 2016-04-21 | 2016-09-07 | 象山搏远智能科技有限公司 | Intelligence temperature detect switch |
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Application publication date: 20200317 |
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