CN205283914U - Full load high stable hangs down pressure drop two -wire system infrared sensor switch - Google Patents
Full load high stable hangs down pressure drop two -wire system infrared sensor switch Download PDFInfo
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- CN205283914U CN205283914U CN201620010886.2U CN201620010886U CN205283914U CN 205283914 U CN205283914 U CN 205283914U CN 201620010886 U CN201620010886 U CN 201620010886U CN 205283914 U CN205283914 U CN 205283914U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
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Abstract
The utility model provides a full load high stable hangs down pressure drop two -wire system infrared sensor switch, triggering wherein is provided with phase inverter and field effect transistor among the supplementary shutdown circuit, on -off control signal output part in this phase inverter input termination infrared signal treatment circuit wherein, this phase inverter output termination field effect transistor grid, this field effect transistor drain electrode meets the controllable silicon control electrode among the power switch circuit wherein, and this field effect transistor source electrode connects this silicon controlled rectifier negative pole and field effect transistor 0 ground, when on -off control signal output part in the infrared signal treatment circuit wherein was the low level, this field effect transistor switched on, and this silicon controlled rectifier can reliably change off -state into by on -state, this kind of inductive switch can control various lamps and lanterns such as incandescent lamp, electricity -saving lamp, LED lamp, inductive ballast fluorescent lamp, when it was in the on -state, it is low that self exchanges the pressure drop, and the voltage waveform distortion that the load obtained is little, and lamps and lanterns such as electricity -saving lamp, LED lamp are difficult to damage.
Description
Technical field
The utility model relates to electronic switch, is a kind of infra-red sensor switch automatically controlled for place illuminations such as residential quarters.
Background technology
At present, the two-wire system infra-red sensor switch for control automatically of throwing light on generally used, its power switch control device adopts micro-trigger controlled silicon; When this kind of switch is connected in every half period of alternating-current, its power switch control device all to be had and ends instantaneously to obtain the volts DS needed for himself work from silicon controlled rectifier anode and negative electrode two ends; When this kind of switch connects the load being greater than 100 watts, the case temperature that rear silicon controlled rectifier connected by switch can become high very soon, control machines sensitivity is also along with raising, thyristor operating angle increases, and then cause himself the volts DS decline needed for work, when the volts DS needed for himself work reduces to a certain extent, this kind of switch just can not normal operation; This kind of switch connect state self exchange pressure drop must be designed to higher in case to the volts DS needed for himself work reserve bigger can fall, the voltage klirr that external load obtains is bigger, when connecing the light fixture such as electricity-saving lamp, LED, light fixture easily damages; When this kind of switch connects the perceptual load that power is greater than 70 watts, can not normally close after connection.
Summary of the invention
The utility model is for the problems referred to above, it is provided that a kind of full load high stable low pressure drop two-wire system infra-red sensor switch.
The technical scheme realizing above-mentioned purpose is: a kind of full load high stable low pressure drop two-wire system infra-red sensor switch comprises power switch circuit, power source circuit, infrared signal processing circuit, the closing assisted circuit of triggering; Power switch circuit is connected with power source circuit, and power source circuit is connected with infrared signal processing circuit and the closing assisted circuit of triggering, and infrared signal processing circuit is connected with the closing assisted circuit of triggering, triggers closing assisted circuit and is connected with power switch circuit; Trigger and closing assisted circuit is provided with phase inverter and MOS field effect transistor, switch controlling signal output terminal in this phase inverter input termination infrared signal processing circuit, this inverter output connects MOS fet gate, the drain electrode of this MOS field effect transistor connects the SCR control pole in power switch circuit, and this MOS field effect transistor source electrode connects the silicon controlled rectifier negative electrode in power switch circuit and power source circuit ground.
The beneficial effects of the utility model are: a kind of full load high stable low pressure drop two-wire system infra-red sensor switch, various light fixture and the exhaust fans such as incandescent light, electricity-saving lamp, LED, the fluorescent lamp of use Inductive ballast, the circline of use electric ballast can be controlled, when it is in connection state, self exchange pressure drop can lower than 3V, the voltage klirr that load obtains is little, and the light fixture such as electricity-saving lamp, LED is not easy to damage; When it is in closing condition, current sinking is little, and LED and electricity-saving lamp do not dodge.
Accompanying drawing explanation
Fig. 1 is the circuit block diagram of this full load high stable low pressure drop two-wire system infra-red sensor switch;
Fig. 2 is the schematic circuit diagram of this full load high stable low pressure drop two-wire system infra-red sensor switch embodiment 1;
Fig. 3 is the schematic circuit diagram of this full load high stable low pressure drop two-wire system infra-red sensor switch embodiment 2;
Fig. 4 is the schematic circuit diagram of this full load high stable low pressure drop two-wire system infra-red sensor switch embodiment 3.
Embodiment
Such as accompanying drawing 1, a kind of full load high stable low pressure drop two-wire system infra-red sensor switch comprises power switch circuit, power source circuit, infrared signal processing circuit, the closing assisted circuit of triggering; Power switch circuit is connected with power source circuit, and power source circuit is connected with infrared signal processing circuit and the closing assisted circuit of triggering, and infrared signal processing circuit is connected with the closing assisted circuit of triggering, triggers closing assisted circuit and is connected with power switch circuit.
Embodiment 1: such as accompanying drawing 2, described power switch circuit comprises the first terminal stud J1, the 2nd terminal stud J2, resistance R25, diode D1, diode D2, diode D3, diode D4 and silicon controlled rectifier Q1; Resistance R25 is insurance resistance, and silicon controlled rectifier Q1 is that micro-touch sends out one-way SCR; Diode D1, diode D2, diode D3, diode D4 are connected into full-wave bridge rectifier circuit, first terminal stud J1 connecting resistance R25 one end, full-wave bridge rectifier circuit exchange input one end described in another termination of resistance R25, the 2nd terminal stud J2 connects the described full-wave bridge rectifier circuit exchange input the other end; Silicon controlled rectifier Q1 anode connects described full-wave bridge rectifier circuit output head anode, and silicon controlled rectifier Q1 negative electrode connects described full-wave bridge rectifier circuit negative pole of output end and power source circuit ground.
Described power source circuit comprises electric capacity C9, electric capacity C10, electric capacity C11, resistance R22, resistance R23, resistance R24, diode D5, diode D6, Zener diode D7 and low-power consumption three-terminal voltage-stabilizing integrated piece of U2; 3rd pin of low-power consumption three-terminal voltage-stabilizing integrated piece of U2 is voltage input end, and the 2nd pin of low-power consumption three-terminal voltage-stabilizing integrated piece of U2 is voltage output end; Silicon controlled rectifier Q1 anode in power switch circuit described in electric capacity C9 mono-termination, electric capacity C9 the other end connecting resistance R24 one end, another termination diode D5 positive pole of resistance R24, diode D5 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, diode D6 negative pole connects diode D5 positive pole, and diode D6 positive pole connects power source circuit ground; Silicon controlled rectifier Q1 anode in power switch circuit described in resistance R22 mono-termination, resistance R22 the other end connecting resistance R23 one end, another termination low-power consumption three-terminal voltage-stabilizing of resistance R23 integrated piece of U2 voltage input end U2 the 3rd pin; Zener diode D7 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, and Zener diode D7 positive pole connects power source circuit ground; Electric capacity C10 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, another termination power source circuit ground of electric capacity C10; Low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 1st pin connects power source circuit ground; Electric capacity C11 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 2nd pin, another termination power source circuit ground of electric capacity C11.
Described infrared signal processing circuit comprises infrared ray sensing signal processing integrated piece of U1, Thermoelectric Infrared Sensor U3, resistance R1��R16, electric capacity C1��C8,2*5 arrange pin JP1 and wire jumper emits W1��W5; The model of infrared ray sensing signal processing integrated piece of U1 is BISS0001, and infrared ray sensing signal processing integrated piece of U1 the 2nd pin is switch controlling signal output terminal; Infrared ray sensing signal processing integrated piece of U1 can also adopt integrated piece of the infrared ray sensing signal processing of other similar functions; Resistance R10 is photovaristor, changes for ambient light; Wire jumper emits W1��W3 for setting the time delay time, and wire jumper emits W4��W5 for setting light sensitivity; The design of this part mainly have employed the design of unicircuit manufacturer's recommended, describes no longer in detail.
The closing assisted circuit of described triggering comprises diode D8, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, NPN type triode Q2, NPN type triode Q3, MOS type field effect transistor Q4 and electric capacity C12, diode D8 is schottky diode, diode D8, resistance R17, resistance R18, resistance R19 and triode Q3 form phase inverter to be held concurrently voltage sampling amplifier, diode D8 negative pole connects switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit, diode D8 positive pole connects triode Q3 base stage, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R17 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, another termination triode Q3 base stage of resistance R17, resistance R18 mono-termination triode Q3 base stage, another termination power source circuit ground of resistance R18, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R19 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, another termination triode Q3 collector electrode of resistance R19, triode Q3 emtting electrode connects power source circuit ground, field effect transistor Q4 grid connects triode Q3 collector electrode, and field effect transistor Q4 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and field effect transistor Q4 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground, switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R20 mono-termination, another termination triode Q2 base stage of resistance R20, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, triode Q2 collector electrode connecting resistance R21 one end, the silicon controlled rectifier Q1 anode in power switch circuit described in another termination of resistance R21, electric capacity C12 mono-termination triode Q2 emtting electrode, another termination power source circuit ground of electric capacity C12, when switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit is high level, diode D8 oppositely ends, triode Q3, resistance R17, resistance R18 and resistance R19 forms voltage sampling amplifier, when low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin voltage is higher than about 3.6 volts, triode Q3 base current increases, triode Q3 collector electrode and field effect transistor Q4 grid voltage reduce, field effect transistor Q4 conducting resistance increases, the shunting action of the ignition current of the silicon controlled rectifier Q1 in described power switch circuit is reduced by field effect transistor Q4, silicon controlled rectifier Q1 conduction angle increases, and then cause integrated piece of U2 voltage input end U2 the 3rd pin voltage decline of low-power consumption three-terminal voltage-stabilizing, on the contrary, when low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin voltage is lower than about 3.6 volts, the base current of triode Q3 reduces, the collector voltage of triode Q3 and field effect transistor Q4 grid voltage raise, field effect transistor Q4 conducting resistance reduces, the shunting action of the ignition current of the silicon controlled rectifier Q1 in described power switch circuit is increased by field effect transistor Q4, the conduction angle of silicon controlled rectifier Q1 reduces, and then causes low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin voltage rise in power source circuit, therefore, when loadtype, load power, electrical network voltage, silicon controlled rectifier case temperature change, integrated piece of U2 voltage input end U2 the 3rd pin voltage of the low-power consumption three-terminal voltage-stabilizing in power source circuit can also keep substantially stable in a lower numerical range, state self exchange pressure drop connected by switch can also be reduced to lower numerical value, when switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit is lower level, diode D8 conducting, resistance R17, resistance R18, the voltage sampling amplifier that resistance R19 and triode Q3 is formed is changed into phase inverter, the base stage voltage clamp of triode Q3 is in the forward conduction voltage of diode D8, lower than the emitter junction forward conduction voltage of triode Q3, triode Q3 ends, the collector electrode of triode Q3 exports high level, field effect transistor Q4 conducting, be equivalent to the indirect resistance of one several ohm that silicon controlled rectifier Q1 in power switch circuit controls pole and negative electrode, the bypass ignition current of silicon controlled rectifier Q1, silicon controlled rectifier Q1 is reliably changed into off condition by conducting state.
Embodiment 2: such as accompanying drawing 3, conceiving identical with embodiment 1, difference is only that the closing assisted circuit of described triggering comprises diode D8, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, NPN type triode Q2, MOS type field effect transistor Q3, MOS type field effect transistor Q4 and electric capacity C12, diode D8, resistance R17, resistance R18, resistance R19 and field effect transistor Q3 form phase inverter to be held concurrently voltage sampling amplifier, diode D8 negative pole connects switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit, diode D8 positive pole connects field effect transistor Q3 grid, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R17 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, resistance R17 another termination field effect transistor Q3 grid, resistance R18 mono-termination field effect transistor Q3 grid, another termination power source circuit ground of resistance R18, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R19 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, resistance R19 another termination field effect transistor Q3 drains, and field effect transistor Q3 source electrode connects power source circuit ground, field effect transistor Q4 grid connects field effect transistor Q3 drain electrode, and field effect transistor Q4 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and field effect transistor Q4 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground, switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R20 mono-termination, another termination triode Q2 base stage of resistance R20, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, triode Q2 collector electrode connecting resistance R21 one end, the silicon controlled rectifier Q1 anode in power switch circuit described in another termination of resistance R21, electric capacity C12 mono-termination triode Q2 emtting electrode, another termination power source circuit ground of electric capacity C12.
Embodiment 3: such as accompanying drawing 4, described power switch circuit comprises the first terminal stud J1, the 2nd terminal stud J2, current transformer T1, resistance R21, diode D1, diode D2, diode D3, diode D4 and silicon controlled rectifier Q1; Resistance R21 is insurance resistance, and silicon controlled rectifier Q1 is that micro-touch sends out one-way SCR; Diode D1, diode D2, diode D3 and diode D4 are connected into full-wave bridge rectifier circuit; First terminal stud J1 connecting resistance R21 one end, another termination current transformer T1 armature winding one end of resistance R21, full-wave bridge rectifier circuit exchange input one end described in current transformer another termination of T1 armature winding, the 2nd terminal stud J2 connects the described full-wave bridge rectifier circuit exchange input the other end; Silicon controlled rectifier Q1 anode connects described full-wave bridge rectifier circuit output head anode, and silicon controlled rectifier Q1 negative electrode connects described full-wave bridge rectifier circuit negative pole of output end and power source circuit ground.
Described power source circuit comprises current transformer T1, electric capacity C9, electric capacity C10, electric capacity C11, resistance R19, resistance R20, diode D5, diode D6, Zener diode D7 and low-power consumption three-terminal voltage-stabilizing integrated piece of U2; Silicon controlled rectifier Q1 anode in power switch circuit described in electric capacity C9 mono-termination, another termination current transformer T1 secondary winding one end of electric capacity C9 and diode D5 negative pole, diode D5 positive pole connects power source circuit ground, another termination diode D6 positive pole of current transformer T1 secondary winding, diode D6 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin; Silicon controlled rectifier Q1 anode in power switch circuit described in resistance R19 mono-termination, resistance R19 the other end connecting resistance R20 one end, another termination low-power consumption three-terminal voltage-stabilizing of resistance R20 integrated piece of U2 voltage input end U2 the 3rd pin, Zener diode D7 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, and Zener diode D7 positive pole connects power source circuit ground; Electric capacity C10 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, another termination power source circuit ground of electric capacity C10; Low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 1st pin connects power source circuit ground; Electric capacity C11 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 2nd pin, another termination power source circuit ground of electric capacity C11; When switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit is lower level, silicon controlled rectifier Q1 in power switch circuit ends, and the input voltage of power source circuit is obtained through step-downs such as electric capacity C9, resistance R19 and resistance R20 by silicon controlled rectifier Q1 anode voltage; When switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit is high level, silicon controlled rectifier Q1 conducting in power switch circuit, the input voltage of power source circuit is transformed into voltage by the working current of switch external load through current transformer T1 and obtains, not needing the silicon controlled rectifier in power switch circuit all to be had in every half period of alternating-current to end instantaneously, external load can obtain the very little voltage of klirr.
Described infrared signal processing circuit is identical with the infrared signal processing circuit in embodiment 1.
The design of described triggering closing assisted circuit is identical with embodiment 1, comprises resistance R17, resistance R18, NPN type triode Q2 and MOS type field effect transistor Q3, resistance R17, resistance R18 and triode Q2 form phase inverter, switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R17 mono-termination, another termination triode Q2 base stage of resistance R17, triode Q2 collector electrode connecting resistance R18 one end, low-power consumption three-terminal voltage-stabilizing in power source circuit described in another termination of resistance R18 integrated piece of U2 voltage input end U2 the 3rd pin, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in power switch circuit and controls pole, MOS type field effect transistor Q3 grid connects triode Q2 collector electrode, and MOS type field effect transistor Q3 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and MOS type field effect transistor Q3 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground, when switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit is high level, triode Q2 conducting, triode Q2 collector electrode and MOS type field effect transistor Q3 grid voltage are lower than the cut-in voltage of MOS type field effect transistor Q3, MOS type field effect transistor Q3 ends, triode Q2 emitter current continues the silicon controlled rectifier Q1 triggered in described power switch circuit, in each complete half period of alternating-current after silicon controlled rectifier Q1 conducting, silicon controlled rectifier Q1 conduction angle can also be exactly the half period of alternating-current to greatest extent close to 180 degree, the voltage klirr that when switch is in connection state, external load obtains is little, when switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit is lower level, triode Q2 ends, triode Q2 collector electrode exports high level signal, MOS type field effect transistor Q3 conducting, be equivalent to the control pole of the silicon controlled rectifier Q1 in described power switch circuit and the indirect resistance of one several ohm of negative electrode, the bypass ignition current of silicon controlled rectifier Q1, silicon controlled rectifier Q1 is reliably changed into off condition by conducting state.
Claims (5)
1. full load high stable low pressure drop two-wire system infra-red sensor switch, is characterized in that: comprise power switch circuit, power source circuit, infrared signal processing circuit, the closing assisted circuit of triggering; Power switch circuit is connected with power source circuit, and power source circuit is connected with infrared signal processing circuit and the closing assisted circuit of triggering, and infrared signal processing circuit is connected with the closing assisted circuit of triggering, triggers closing assisted circuit and is connected with power switch circuit; Trigger and closing assisted circuit is provided with phase inverter and MOS field effect transistor, switch controlling signal output terminal in this phase inverter input termination infrared signal processing circuit, this inverter output connects MOS fet gate, the drain electrode of this MOS field effect transistor connects the SCR control pole in power switch circuit, and this MOS field effect transistor source electrode connects the silicon controlled rectifier negative electrode in power switch circuit and power source circuit ground.
2. full load high stable low pressure drop two-wire system infra-red sensor switch according to claim 1, is characterized in that: the closing assisted circuit of described triggering comprises diode D8, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, NPN type triode Q2, NPN type triode Q3, MOS type field effect transistor Q4 and electric capacity C12; Diode D8, resistance R17, resistance R18, resistance R19 and triode Q3 form phase inverter to be held concurrently voltage sampling amplifier, diode D8 negative pole connects switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit, diode D8 positive pole connects triode Q3 base stage, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R17 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, another termination triode Q3 base stage of resistance R17, resistance R18 mono-termination triode Q3 base stage, another termination power source circuit ground of resistance R18; Low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R19 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, another termination triode Q3 collector electrode of resistance R19, triode Q3 emtting electrode connects power source circuit ground; Field effect transistor Q4 grid connects triode Q3 collector electrode, and field effect transistor Q4 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and field effect transistor Q4 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground; Switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R20 mono-termination, another termination triode Q2 base stage of resistance R20, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, triode Q2 collector electrode connecting resistance R21 one end, the silicon controlled rectifier Q1 anode in power switch circuit described in another termination of resistance R21; Electric capacity C12 mono-termination triode Q2 emtting electrode, another termination power source circuit ground of electric capacity C12.
3. full load high stable low pressure drop two-wire system infra-red sensor switch according to claim 1, is characterized in that: the closing assisted circuit of described triggering comprises diode D8, resistance R17, resistance R18, resistance R19, resistance R20, resistance R21, NPN type triode Q2, MOS type field effect transistor Q3, MOS type field effect transistor Q4 and electric capacity C12, diode D8, resistance R17, resistance R18, resistance R19 and field effect transistor Q3 form phase inverter to be held concurrently voltage sampling amplifier, diode D8 negative pole connects switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in described infrared signal processing circuit, diode D8 positive pole connects field effect transistor Q3 grid, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R17 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, resistance R17 another termination field effect transistor Q3 grid, resistance R18 mono-termination field effect transistor Q3 grid, another termination power source circuit ground of resistance R18, low-power consumption three-terminal voltage-stabilizing in power source circuit described in resistance R19 mono-termination integrated piece of U2 voltage input end U2 the 3rd pin, resistance R19 another termination field effect transistor Q3 drains, and field effect transistor Q3 source electrode connects power source circuit ground, field effect transistor Q4 grid connects field effect transistor Q3 drain electrode, and field effect transistor Q4 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and field effect transistor Q4 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground, switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R20 mono-termination, another termination triode Q2 base stage of resistance R20, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, triode Q2 collector electrode connecting resistance R21 one end, the silicon controlled rectifier Q1 anode in power switch circuit described in another termination of resistance R21, electric capacity C12 mono-termination triode Q2 emtting electrode, another termination power source circuit ground of electric capacity C12.
4. full load high stable low pressure drop two-wire system infra-red sensor switch according to claim 1, is characterized in that: the closing assisted circuit of described triggering comprises resistance R17, resistance R18, NPN type triode Q2 and MOS type field effect transistor Q3; Resistance R17, resistance R18 and triode Q2 form phase inverter; Switch controlling signal output terminal U1 the 2nd pin of the infrared ray sensing signal processing integrated piece of U1 in infrared signal processing circuit described in resistance R17 mono-termination, another termination triode Q2 base stage of resistance R17, triode Q2 collector electrode connecting resistance R18 one end, low-power consumption three-terminal voltage-stabilizing in power source circuit described in another termination of resistance R18 integrated piece of U2 voltage input end U2 the 3rd pin, triode Q2 emtting electrode meets the silicon controlled rectifier Q1 in power switch circuit and controls pole; MOS type field effect transistor Q3 grid connects triode Q2 collector electrode, and MOS type field effect transistor Q3 drain electrode meets the silicon controlled rectifier Q1 in described power switch circuit and controls pole, and MOS type field effect transistor Q3 source electrode connects the silicon controlled rectifier Q1 negative electrode in described power switch circuit and power source circuit ground.
5. full load high stable low pressure drop two-wire system infra-red sensor switch according to claim 1, is characterized in that: described power source circuit comprises current transformer T1, electric capacity C9, electric capacity C10, electric capacity C11, resistance R19, resistance R20, diode D5, diode D6, Zener diode D7 and low-power consumption three-terminal voltage-stabilizing integrated piece of U2; Silicon controlled rectifier Q1 anode in power switch circuit described in electric capacity C9 mono-termination, another termination current transformer T1 secondary winding one end of electric capacity C9 and diode D5 negative pole, diode D5 positive pole connects power source circuit ground, another termination diode D6 positive pole of current transformer T1 secondary winding, diode D6 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin; Silicon controlled rectifier Q1 anode in power switch circuit described in resistance R19 mono-termination, resistance R19 the other end connecting resistance R20 one end, another termination low-power consumption three-terminal voltage-stabilizing of resistance R20 integrated piece of U2 voltage input end U2 the 3rd pin, Zener diode D7 negative pole connects low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, and Zener diode D7 positive pole connects power source circuit ground; Electric capacity C10 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 voltage input end U2 the 3rd pin, another termination power source circuit ground of electric capacity C10; Low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 1st pin connects power source circuit ground; Electric capacity C11 mono-termination low-power consumption three-terminal voltage-stabilizing integrated piece of U2 the 2nd pin, another termination power source circuit ground of electric capacity C11.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620010886.2U CN205283914U (en) | 2016-01-07 | 2016-01-07 | Full load high stable hangs down pressure drop two -wire system infrared sensor switch |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620010886.2U CN205283914U (en) | 2016-01-07 | 2016-01-07 | Full load high stable hangs down pressure drop two -wire system infrared sensor switch |
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| CN205283914U true CN205283914U (en) | 2016-06-01 |
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| CN201620010886.2U Expired - Fee Related CN205283914U (en) | 2016-01-07 | 2016-01-07 | Full load high stable hangs down pressure drop two -wire system infrared sensor switch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230428A (en) * | 2016-08-31 | 2016-12-14 | 浙江宙辉电器有限公司 | A kind of infrared induction circuit |
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2016
- 2016-01-07 CN CN201620010886.2U patent/CN205283914U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230428A (en) * | 2016-08-31 | 2016-12-14 | 浙江宙辉电器有限公司 | A kind of infrared induction circuit |
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