CN110885967A - High-impedance film and preparation method thereof - Google Patents
High-impedance film and preparation method thereof Download PDFInfo
- Publication number
- CN110885967A CN110885967A CN201911243381.5A CN201911243381A CN110885967A CN 110885967 A CN110885967 A CN 110885967A CN 201911243381 A CN201911243381 A CN 201911243381A CN 110885967 A CN110885967 A CN 110885967A
- Authority
- CN
- China
- Prior art keywords
- sputtering
- indium
- resistance film
- producing
- argon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 45
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 27
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000011224 oxide ceramic Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 9
- 238000002834 transmittance Methods 0.000 description 9
- 239000013077 target material Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention provides a preparation method of a high-impedance film, which comprises the following steps: coating on glass substrate by magnetron sputtering method, wherein the target is indium-containing composite material, and the pressure in sputtering chamber is 1.5-3.5 × 10‑3Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure. The high-impedance film has the advantages of higher surface resistance value, better anti-static effect and better anti-interference effect.
Description
Technical Field
The invention relates to the technical field of thin films, in particular to a high-impedance film and a preparation method thereof.
Background
The high-resistance film with high-impedance characteristic has wide application, can be applied to electronic devices, can shield the electronic devices from static electricity after being grounded, can also be applied to liquid crystal displays, can be used as a control element to control the conduction of certain directions and the disconnection of certain directions, and can also be used as an electrode. However, the performance of the existing high-impedance film is general, and especially when the film is applied to a touch screen, the film has small surface resistance and poor anti-interference effect, or the film has poor anti-static effect, so that the use effect of the touch screen is limited.
Disclosure of Invention
In view of this, the present invention is directed to a high-impedance film with a high surface resistance value, a good anti-static effect, and a good anti-interference effect, and a method for manufacturing the same.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a method for preparing a high-impedance film comprises the following steps:
coating on glass substrate by magnetron sputtering method, wherein the target is indium-containing composite material, and the pressure in sputtering chamber is 1.5-3.5 × 10-3Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure.
Further, the sputtering time is 3-10 min; preferably, the sputtering time is 7min, and a thin film with the thickness of 5-7nm is formed.
Further, the power of the sputtering is 40-100W; preferably, the power of the sputtering is 80W.
Further, the sputtering distance is 5-10cm, and the sputtering mode is direct current sputtering.
Further, the concentration of the argon is 99.99 percent
Further, the indium-containing composite material is indium tin oxide, and preferably, the indium-containing composite material is an indium tin oxide ceramic target.
The invention also provides a high-impedance film prepared by the preparation method.
Compared with the prior art, the high-impedance film has the following advantages:
(1) the resistance value of the square resistor of the high-impedance film is higher and is 108-1010Europe has better antistatic effect and better anti-interference effect, and the transmittance can reach more than 98 percent in the visible light range, thereby improving the definition and the energy of pictures.
(2) The sputtering time is preferably 7min, the sputtering power is preferably 80W, and the thin film with high sheet resistance and high transmittance can be obtained under the sputtering time and the sputtering power.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention will be described in detail with reference to examples.
Example 1
A method for preparing a high-impedance film comprises the following steps:
the magnetron sputtering method is adopted to coat the film on the glass substrate, the target material is indium tin oxide ceramic target, the pressure of the sputtering chamber is pumped to 1.5 multiplied by 10-3Pa, working gas is argon, the concentration of argon is 99.99%, the sputtering pressure is 0.3Pa, the sputtering time is 2min, the sputtering power is 40W, the sputtering distance is 8cm, and the sputtering mode is direct-current sputtering.
Example 2
A method for preparing a high-impedance film comprises the following steps:
the magnetron sputtering method is adopted to coat a film on a glass substrate, the target material is an indium tin oxide ceramic target, and the pressure of a sputtering chamber is pumped to 2 multiplied by 10-3Pa, working gas is argon, the concentration of argon is 99.99%, the sputtering pressure is 0.6Pa, the sputtering time is 7min, the sputtering power is 80W, the sputtering distance is 8cm, and the sputtering mode is direct current sputtering.
Example 3
A method for preparing a high-impedance film comprises the following steps:
the magnetron sputtering method is adopted to coat a film on a glass substrate, the target material is an indium tin oxide ceramic target, and the pressure of a sputtering chamber is pumped to 3 multiplied by 10-3Pa, working gas is argon, the concentration of argon is 99.99%, the sputtering pressure is 1.0Pa, the sputtering time is 10min, the sputtering power is 100W, the sputtering distance is 8cm, and the sputtering mode is direct current sputtering.
The sheet resistance of the high-resistance films obtained in examples 1 to 3 was 108-1010Europe.
The transmittance values before and after the coated glass was measured under sunlight and the sheet resistance values were measured for 3 coated glasses of 5cm × 5cm prepared in examples 1 to 3, respectively, as shown in tables 1 to 3.
TABLE 1 transmittance of coated glass obtained in example 1
TABLE 2 transmittance of coated glass obtained in example 1
TABLE 3 transmittance of coated glass obtained in example 1
Note: the glass surface refers to the transmittance value of the common surface of the glass substrate before coating, and the coated surface refers to the transmittance value of the glass surface after coating.
The high-resistance films of embodiments 1 to 3 are applied to a liquid crystal display screen, and have the advantages of static resistance, no shielding, no influence on the touch function of a device, and good light transmittance.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (7)
1. A preparation method of a high-impedance film is characterized by comprising the following steps: the method comprises the following steps:
coating on a glass substrate by magnetron sputtering, wherein the target is an indium-containing composite material, and the sputtering chamberPumping to 1.5-3.5X 10-3Pa, argon as working gas, and 0.3-1.0Pa as sputtering pressure.
2. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering time is 3-10 min; preferably, the sputtering time is 7min, and a thin film with the thickness of 5-7nm is formed.
3. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering power is 40-100W; preferably, the power of the sputtering is 80W.
4. The method for producing a high-resistance film according to claim 1, characterized in that: the sputtering distance is 5-10cm, and the sputtering mode is direct current sputtering.
5. The method for producing a high-resistance film according to claim 1, characterized in that: the concentration of argon is 99.99%.
6. The method for producing a high-resistance film according to claim 1, characterized in that: the indium-containing composite material is indium tin oxide, and preferably, the indium-containing composite material is an indium tin oxide ceramic target.
7. A high-resistance film produced by the production method according to any one of claims 1 to 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911243381.5A CN110885967A (en) | 2019-12-06 | 2019-12-06 | High-impedance film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911243381.5A CN110885967A (en) | 2019-12-06 | 2019-12-06 | High-impedance film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110885967A true CN110885967A (en) | 2020-03-17 |
Family
ID=69750867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911243381.5A Pending CN110885967A (en) | 2019-12-06 | 2019-12-06 | High-impedance film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110885967A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06184742A (en) * | 1992-12-22 | 1994-07-05 | Tdk Corp | Sputtering method and device |
| JP2005248211A (en) * | 2004-03-01 | 2005-09-15 | Tosoh Corp | Transparent electroconductive film and manufacturing method therefor |
| CN102544233A (en) * | 2012-02-23 | 2012-07-04 | 上海中智光纤通讯有限公司 | ITO transparent conductive oxide thin film preparation method |
| CN104195519A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Magnetron sputtering process for enhancing property of ITO (Indium Tin oxide) film |
| CN108285278A (en) * | 2017-12-21 | 2018-07-17 | 凯盛科技股份有限公司 | A kind of preparation method of the high ito glass substrate thoroughly of high resistant |
| CN108374155A (en) * | 2018-02-27 | 2018-08-07 | 清华大学 | Ito thin film and preparation method thereof |
-
2019
- 2019-12-06 CN CN201911243381.5A patent/CN110885967A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06184742A (en) * | 1992-12-22 | 1994-07-05 | Tdk Corp | Sputtering method and device |
| JP2005248211A (en) * | 2004-03-01 | 2005-09-15 | Tosoh Corp | Transparent electroconductive film and manufacturing method therefor |
| CN102544233A (en) * | 2012-02-23 | 2012-07-04 | 上海中智光纤通讯有限公司 | ITO transparent conductive oxide thin film preparation method |
| CN104195519A (en) * | 2014-09-05 | 2014-12-10 | 浙江晶科能源有限公司 | Magnetron sputtering process for enhancing property of ITO (Indium Tin oxide) film |
| CN108285278A (en) * | 2017-12-21 | 2018-07-17 | 凯盛科技股份有限公司 | A kind of preparation method of the high ito glass substrate thoroughly of high resistant |
| CN108374155A (en) * | 2018-02-27 | 2018-08-07 | 清华大学 | Ito thin film and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105551579B (en) | One kind can electrochromic multi-layer transparent electroconductive film and preparation method thereof | |
| JP2013093310A (en) | Transparent conductive film | |
| US8409694B2 (en) | Coated glass and method for making the same | |
| Jung et al. | Properties of AZO/Ag/AZO multilayer thin film deposited on polyethersulfone substrate | |
| CN102982861A (en) | Transparent conductive film layer for capacitive touch screen | |
| CN106571173B (en) | High temperature resistant composite transparent conductive film, preparation method and application | |
| WO2014021325A1 (en) | Transparent conductive film and method for producing same | |
| JP2017518441A (en) | Transparent conductive indium-doped tin oxide | |
| CN105489270B (en) | A kind of sandwich transparent conductive film and preparation method thereof | |
| CN105819703A (en) | Preparation method of capacitive touch screen electro-conductive glass with shadow eliminating function | |
| CN105601125A (en) | Transparent electroconductive glass for electrochromic glass and preparation method of transparent electroconductive glass | |
| CN110885967A (en) | High-impedance film and preparation method thereof | |
| JP2004050643A (en) | Thin film laminated body | |
| CN106024110B (en) | A kind of stronitum stannate base flexible and transparent conductive electrode and preparation method thereof | |
| CN104176947B (en) | ITO electro-conductive glass and preparation method thereof | |
| CN105063557A (en) | Method for directional resistance value increase of ITO conducting film | |
| CN105741916B (en) | A kind of flexible transparent electrode and preparation method thereof | |
| CN112194380A (en) | Coated glass and method for producing same | |
| JP3654841B2 (en) | Transparent conductive film and method for producing the same | |
| CN115074666B (en) | Preparation method of multilayer composite ITO film | |
| JP2014047400A (en) | Ag ALLOY MEMBRANE FOR SEMI-TRANSMISSIVE ELECTRODE OF FLAT PANEL DISPLAY, AND SEMI-TRANSMISSIVE ELECTRODE FOR FLAT PANEL DISPLAY | |
| Hyun Lee et al. | Process Optimization of Aluminum-Doped Zinc Oxide Films by In-Line Pulsed-DC Sputtering and Its Application to Resistive Touch Panels | |
| WO2023042848A1 (en) | Transparent conductive film | |
| CN217426385U (en) | Low-resistance high-transmittance ITO conductive film | |
| CN115418609B (en) | Hafnium-doped indium oxide transparent conductive film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200317 |
|
| RJ01 | Rejection of invention patent application after publication |