CN110875710B - Over-temperature protection method and device for power module in inverter and vehicle - Google Patents
Over-temperature protection method and device for power module in inverter and vehicle Download PDFInfo
- Publication number
- CN110875710B CN110875710B CN201810994905.3A CN201810994905A CN110875710B CN 110875710 B CN110875710 B CN 110875710B CN 201810994905 A CN201810994905 A CN 201810994905A CN 110875710 B CN110875710 B CN 110875710B
- Authority
- CN
- China
- Prior art keywords
- power device
- power
- inverter
- temperature
- power module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
- H02P29/60—Controlling or determining the temperature of the motor or of the drive
- H02P29/68—Controlling or determining the temperature of the motor or of the drive based on the temperature of a drive component or a semiconductor component
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention provides an over-temperature protection method and device for a power module in an inverter and a vehicle, wherein the inverter is used for driving a motor, and the method comprises the following steps: acquiring state information of a motor, state information of an inverter and parameter information of a power module, wherein the power module comprises a plurality of power devices; acquiring the surface temperatures of a plurality of power devices; respectively calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of the plurality of power devices; and performing over-temperature protection on the power module according to the wafer junction temperature of at least one power device and a preset temperature threshold value. The invention improves the accuracy and real-time performance of monitoring the power module, is beneficial to carrying out effective over-temperature protection on the power module and improves the safety of the power module.
Description
Technical Field
The invention relates to the technical field of rail transit, in particular to an over-temperature protection method and device for a power module in an inverter and a vehicle.
Background
The power devices in the inverter (e.g., traction inverter) are key components of a vehicle, such as a rail traction system, and the implementation of commutation controls the implementation of the traction motor, the safe and reliable operation of which is very important for the operation of a rail train. Temperature is a very critical factor in the use of power devices, and once the temperature exceeds a limit (e.g., 150 °), the wafer of the power device is easily damaged.
In the related art, the temperature protection of the power device is basically performed by using a temperature sensor of the power module and a temperature sensor of the heat sink. However, the sampling value of the temperature sensor in the power module does not truly reflect the actual temperature of the power device wafer, and the temperature difference varies with the installation position of the sensor, the assembly process, the switch carrier, the load operation condition and other factors. Therefore, the sampling of the temperature sensor can not effectively protect the power device, the temperature sensor of the radiator also has the problems, and the longer the time is, certain influence is caused on the thermal resistance due to factors such as water scales and the like, so that the inaccurate measurement of the temperature sensor of the radiator can be caused, the over-temperature protection effect is reduced, and the safety of the power module is further reduced.
Disclosure of Invention
The present invention is directed to solving at least one of the above problems.
Therefore, a first objective of the present invention is to provide an over-temperature protection method for a power module in an inverter, which improves accuracy and real-time performance of monitoring the power module, facilitates effective over-temperature protection for the power module, and improves safety of the power module.
To this end, a second object of the present invention is to provide an over-temperature protection device for a power module in an inverter.
To this end, a third object of the present invention is to provide an over-temperature protection device for a power module in an inverter.
To this end, a fourth object of the invention is to propose a vehicle.
In order to achieve the above object, an embodiment of a first aspect of the present invention proposes an over-temperature protection method for a power module in an inverter for driving a motor, the method including the steps of: acquiring state information of the motor, state information of the inverter and parameter information of the power module, wherein the power module comprises a plurality of power devices; acquiring the surface temperatures of the plurality of power devices; respectively calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of the plurality of power devices; and performing over-temperature protection on the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold.
According to the over-temperature protection method for the power module in the inverter, wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperature of a plurality of power devices, and over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
In order to achieve the above object, an embodiment of a second aspect of the present invention proposes an overheat protection apparatus of a power module in an inverter for driving a motor, including: a power module comprising a plurality of power devices; a temperature detection unit for detecting surface temperatures of the plurality of power devices; the control unit is used for acquiring state information of the motor, state information of the inverter and parameter information of the power modules, respectively calculating wafer junction temperature of at least one power device in the power modules according to the state information of the motor, the state information of the inverter, the parameter information of the power modules and the surface temperatures of the plurality of power devices, and performing over-temperature protection on the power modules according to the wafer junction temperature of the at least one power device and a preset temperature threshold.
According to the over-temperature protection device for the power module in the inverter, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and the preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
In order to achieve the above object, an embodiment of a third aspect of the present invention provides an over-temperature protection apparatus for a power module in an inverter, including a memory, a processor, and an over-temperature protection program for the power module in the inverter, where the program is stored in the memory and is executable on the processor, and when the processor executes the program, the over-temperature protection method for the power module in the inverter according to the above embodiment of the present invention is implemented.
According to the over-temperature protection device for the power module in the inverter, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and the preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
In order to achieve the above object, an embodiment of a fourth aspect of the present invention proposes a vehicle including the overheat protection apparatus of the power module in the inverter according to the embodiment of the fourth aspect of the present invention.
According to the vehicle provided by the embodiment of the invention, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the power module is subjected to over-temperature protection according to the wafer junction temperature of the at least one power device and a preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a flow diagram of a method of over-temperature protection of a power module in an inverter according to one embodiment of the invention;
FIG. 2 is a schematic diagram of a power module temperature estimation function call according to one embodiment of the invention;
FIG. 3 is a schematic diagram of a power module temperature estimation algorithm function according to one embodiment of the present invention;
FIG. 4 is a power down schematic of a power module over-temperature protection method according to one embodiment of the invention;
fig. 5 is a schematic structural diagram of an overheat protection apparatus for a power module in an inverter according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The following describes an over-temperature protection method and device for a power module in an inverter and a vehicle according to an embodiment of the invention with reference to the accompanying drawings.
Fig. 1 is a flowchart of a method of over-temperature protection of a power module in an inverter according to one embodiment of the present invention. The inverter is used for driving the motor. As shown in fig. 1, the method comprises the steps of:
step S1: the method comprises the steps of obtaining state information of a motor, state information of an inverter and parameter information of a power module, wherein the power module comprises a plurality of power devices.
Step S2: the surface temperatures of a plurality of power devices are acquired.
Step S3: and respectively calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of the plurality of power devices.
It is understood that the inverter comprises a power module and, in addition, at least a heat sink. Further, the power module includes an inverter bridge. In one embodiment of the invention, an inverter bridge having M legs, M being an integer greater than 1, is constructed from a plurality of power devices. The state information of the motor comprises the rotating speed of the motor, wherein when the rotating speed of the motor is smaller than a preset threshold value, the wafer junction temperature of at least one power device comprises: the wafer junction temperature of the power device of the upper bridge arm of each of the M bridge arms and the wafer junction temperature of the power device of the lower bridge arm of each of the M bridge arms; when the rotation speed of the motor is greater than the preset threshold value, the wafer junction temperature of at least one power device comprises: and the wafer junction temperature of the power device of the upper bridge arm of the preset bridge arm in the M bridge arms and/or the wafer junction temperature of the power device of the lower bridge arm of the preset bridge arm in the M bridge arms. For example, taking M as 3 as an example, that is, constructing an inverter bridge having 3 bridge arms by using a plurality of power devices, when the rotation speed of the motor is less than a preset threshold, respectively calculating the wafer junction temperatures of the power devices of the upper bridge arms of the 3 bridge arms and the wafer junction temperatures of the power devices of the lower bridge arms of the 3 bridge arms; when the rotating speed of the motor is larger than a preset threshold value, respectively calculating the wafer junction temperature of the power device of the upper bridge arm of a preset bridge arm (such as a single bridge arm at the downstream of the maximum current and heat dissipation water channel) in the 3 bridge arms and calculating the wafer junction temperature of the power device of the lower bridge arm of the preset bridge arm in the M bridge arms.
That is, the estimation function is called in a segmented mode according to the rotating speed, and then the wafer junction temperature is calculated. And when the speed is low (the rotating speed of the motor is less than a preset threshold), estimating the power devices of all bridge arms, and dynamically correcting the coefficients of the power devices of all bridge arms when the rotor is blocked or the radiator does not flow. When the rotating speed exceeds a preset threshold (such as 300rpm), the maximum current and the temperature estimation of a single module (a preset bridge arm) at the downstream of the heat dissipation water channel are monitored, so that the operation load of the system is reduced, and the wafer junction temperature of the power device can be accurately, reliably and quickly estimated.
Specifically, the upper bridge arm of each bridge arm comprises a first IGBT (Insulated Gate Bipolar Transistor) and a first freewheeling diode in anti-parallel connection with the first IGBT, and the lower bridge arm of each bridge arm comprises a second IGBT and a second freewheeling diode in anti-parallel connection with the second IGBT, wherein the wafer junction temperature of the power device of the upper bridge arm is the wafer junction temperature of the first IGBT, and the wafer junction temperature of the power device of the lower bridge arm is the wafer junction temperature of the second freewheeling diode; or the wafer junction temperature of the power device of the upper bridge arm is the wafer junction temperature of the first freewheeling diode, and the wafer junction temperature of the power device of the lower bridge arm is the wafer junction temperature of the second IGBT.
Specifically, in an embodiment of the present invention, the parameter information of the power module includes power losses and thermal resistance values of the plurality of power devices, and based on this, calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module, and the surface temperature of the at least one power device respectively includes: acquiring the power loss of each power device in at least one power device; acquiring the thermal resistance value of each power device in at least one power device; acquiring a weighted value according to the state information of the motor and the state information of the inverter, and weighting the thermal resistance value of each power device according to the weighted value; and correspondingly calculating the wafer junction temperature of each power device according to the power loss of each power device, the weighted thermal resistance value of each power device and the surface temperature of each power device. Wherein each power device refers to each power device of the at least one power device.
In one embodiment of the invention, the wafer junction temperature of the power device is calculated according to the following formula:
Tj＝P*Rt+TNTC
wherein Tj is the wafer junction temperature of the power device, P is the power loss of the power device, Rt is the weighted thermal resistance value of the power device, and TNTCIs the surface temperature of the power device.
Specifically, in one embodiment of the present invention, the method further comprises: calculating the wafer junction temperature of at least one power device in the power module at preset intervals, further, as shown in fig. 3, the power loss of the power device includes conduction loss and switching loss, wherein obtaining the power loss of the power device includes: acquiring the voltage drop of a power device, the current flowing through the power device and the switching duty ratio of the power device, and calculating the conduction loss of the power device according to the voltage drop of the power device, the current flowing through the power device and the switching duty ratio of the power device; acquiring the bus voltage of the power module, the current flowing through the power device and the wafer junction temperature of the power device calculated last time, and calculating the switching loss of the power device according to the bus voltage of the power module, the current flowing through the power device and the wafer junction temperature of the power device calculated last time; and taking the sum of the conduction loss of the power device and the switching loss of the power device as the power loss of the power device. As mentioned above, the wafer junction temperature of at least one power device in the power module is calculated at intervals of the preset interval, and therefore, the wafer junction temperature of the last calculated power device refers to the wafer junction temperature of the power device calculated in the previous calculation period before the current calculation period starts. For example, the wafer junction temperature of at least one power device in the power module is calculated every 30 seconds, and if the time of the current calculation cycle is 60 seconds, the last calculated wafer junction temperature of the power device refers to the wafer junction temperature of the power device calculated at 30 seconds.
For example, as mentioned above, the power devices in the inverter mainly include a three-phase inverter composed of IGBTs and freewheeling diodes. Wherein the power loss of the power device includes conduction loss and switching loss. And related conduction loss parameters and switching loss parameters are obtained through a product manual, and the power loss of the power device can be calculated in real time according to the operating condition of the motor.
Taking the IGBT as an example, the power loss of the IGBT mainly includes conduction loss and switching loss. The calculation methods are respectively as follows:
PCon＝Uce·i·Duty+rce·(i·Duty)2 (1)
in the formula, PConFor conduction losses of IGBT, UceFor the voltage drop of the IGBT, i is the current flowing through the IGBT in real time, Duty is the switching Duty ratio of the IGBT, and rceIs the on-resistance of the IGBT.
Wherein, PsFor switching losses of IGBT, EonIs the turn-on loss of the IGBT in the reference state, EoffIs the turn-off loss, f, of the IGBT in the reference statesIs the switching frequency, UdcIs the bus voltage, i is the instantaneous current, UrefIs a reference voltage, IrefIs a reference current, KvIs the voltage coefficient, KiIs the current coefficient, Tc is the temperature coefficient, Tj is the last calculated junction temperature, Tref is the reference temperature. It should be noted that, the above example is a calculation manner for the conduction loss and the switching loss of the IGBT, and the calculation manner for the conduction loss and the switching loss of the diode is similar to the above calculation manner for the IGBT, and the difference is only that in the diode-related calculation, Eon + Eoff is Err, where Err is the switching loss in the reference state, and details are not repeated here to reduce redundancy.
Further, the instantaneous power loss of the IGBT can be obtained by the above-described formula (1) and formula (2). It should be noted that, when the formula is applied, the modification can be performed according to the actual data curve. For example, the IGBT losses are calculated during the positive half-cycle of the current and the freewheeling diode losses are calculated during the negative half-cycle of the current. As can be seen from equation (2), the switching loss is also related to the actual temperature, and when the junction temperature is estimated in real time, repeated iterations of the loss and the temperature are required.
In one embodiment of the present invention, obtaining the thermal resistance value of the power device comprises: acquiring the running time of the inverter; determining a heat supply network model of the power device; and calculating the thermal resistance value of the power device according to the running time of the inverter and the heat supply network model of the power device. For example, the instantaneous junction temperature condition of the corresponding wafer is obtained by establishing a heat supply network model. The general heat supply network model obtains the corresponding heat resistance value and the corresponding heat capacity value through an off-line test, and then the corresponding N-order heat supply network model is obtained through matching. Some power devices need to consider the thermal coupling effect of the IGBT and the freewheeling diode, and the thermal coupling parameter between the two devices needs to be tested. And obtaining the junction temperature value of the corresponding power device through the heat supply network model according to the power loss. In the embodiment of the present invention, referring to fig. 3, parameters such as thermal resistance R and thermal capacity C are fitted according to a actually tested thermal resistance curve, so as to establish a heat supply network model, as shown in formula (3).
Wherein, R is a thermal resistance value, T is R C, C is a heat capacity value, and T is an operation time. And then, calculating the thermal resistance value R of the power device after formula conversion.
When the heat supply network model is established, different working conditions can be preset for testing, and the heat supply network models under different working conditions are expressed in a gradient mode in a weighting mode. For example, the worst heat dissipation and application conditions are used as the upper boundary conditions to perform testing to obtain the thermal resistance value, the best heat dissipation and application conditions are used as the lower boundary conditions to perform testing to obtain the thermal resistance value, and gradient weighting is performed on other working conditions according to the offline testing conditions.
In one embodiment of the present invention, the state information of the motor includes a rotation speed of the motor, and the state information of the inverter includes a radiator state, based on which obtaining the weight value according to the state information of the motor and the state information of the inverter includes: when the rotating speed of the motor is less than a preset threshold value, the motor is not locked, and the radiator of the inverter is not in fault, the first weighting coefficient k is used1As a weighted value; when the rotating speed of the motor is less than the preset threshold value, the motor is not locked, and the radiator of the inverter fails, the second weighting coefficient k is used for calculating the second weighting coefficient k2As a weighted value; when the rotating speed of the motor is less than a preset threshold value, the motor is locked, and the radiator of the inverter does not break down, the third weighting coefficient k is used3As a weighted value; when the rotating speed of the motor is less than the preset thresholdWhen the value is equal, the motor is locked, and the radiator of the inverter fails, the fourth weighting coefficient k is used4As a weighted value; when the rotating speed of the motor is greater than or equal to a preset threshold value, the fifth weighting coefficient k is set5As a weighted value. Wherein k is1Less than k2And k is2Less than k3And k is3Less than k4，k4Is less than or equal to k5Wherein k is1、k2、k3、k4、k5Is a number greater than 0 and equal to or less than 1, k1、k2、k3、k4、k5The value of (b) is obtained by experiment, i.e. calibrated in advance.
For example, referring to fig. 2, different estimation functions are selected to obtain corresponding weighting coefficients according to different operating conditions of the motor, so as to identify different operating conditions and estimate the temperature more accurately. Specifically, in the normal operation process of the motor, that is, when the rotation speed of the motor is less than a preset threshold (for example, TBD in fig. 2), the motor is not locked, and the radiator of the inverter is not in fault, an estimation function 1 is adopted, and the first weighting coefficient is used as a weighting value; when the radiator system fails, namely the rotating speed of the motor is less than a preset threshold value and the motor is not locked, and the radiator of the inverter fails (such as no water flows), an estimation function 2 is adopted, and a second weighting coefficient is used as a weighting value; when the motor is locked, namely the rotating speed of the motor is smaller than a preset threshold value, the motor is locked, and the radiator of the inverter does not break down, an estimation function 3 is adopted, and a third weighting coefficient is used as a weighted value; when the motor is locked and the radiator system is in fault, namely the rotating speed of the motor is smaller than a preset threshold value, the motor is locked and the radiator of the inverter is in fault (such as no water flow), an estimation function 4 is adopted, and the fourth weighting coefficient is used as a weighting value. Further, when the rotating speed of the rotating speed motor is larger than a preset threshold value, a junction temperature estimation function of a bridge arm with poor heat dissipation is adopted, and the fifth weighting coefficient is used as a weighted value.
With reference to the foregoing example, if the heat supply network model of the power device is, for example, a 4 th order heat supply network model, the thermal resistance value in the estimation function 1 is:
Rt1＝k1*R(t)
where Rt1 is the thermal resistance, k, of the estimation function 11Is the first weighting coefficient, which is the weighting coefficient of the estimation function 1.
The thermal resistance values in the estimation function 2 are:
Rt2＝k2*R(t)
where Rt2 is the thermal resistance, k, of the estimation function 22Is the weighting coefficient of the evaluation function 2, i.e. the second weighting coefficient.
The thermal resistance values in the estimation function 3 are:
Rt3＝k3*R(t)
where Rt3 is the thermal resistance, k, of the estimation function 33Is the weighting coefficient of the evaluation function 3, i.e. the third weighting coefficient.
The thermal resistance values in the estimation function 4 are:
Rt4＝k4*R(t)
where Rt4 is the thermal resistance, k, of the estimation function 44Is the weighting coefficient of the evaluation function 4, i.e. the fourth weighting coefficient.
As described above, the above weighting coefficients satisfy: k is a radical of1<k2<k3<k4I.e. the first weighting factor is smaller than the second weighting factor, the second weighting factor is smaller than the third weighting factor, and the third weighting factor is smaller than the fourth weighting factor.
Further, the wafer junction temperature can be obtained as shown in the formula (4) by combining the formulas (1), (2) and (3).
Tj＝(Pcon+Ps)*Rt+TNTC(4)
Wherein, Tj is the wafer temperature of the single bridge arm of the inverter (i.e. the wafer junction temperature of the power device), TNTCThe sampled value of the temperature sensor of the tube (i.e. the surface temperature of the power device), Rt, is the thermal resistance value under different conditions, PConFor conduction losses, P, of power devicessIs the switching loss of the power device. Wherein P ═ Pcon+PsAnd P is the power loss of the power device.
Step S4: and performing over-temperature protection on the power module according to the wafer junction temperature of at least one power device and a preset temperature threshold.
Specifically, performing over-temperature protection on the power module according to the wafer junction temperature of at least one power device and a preset temperature threshold includes: determining a maximum value of the wafer junction temperatures of the at least one power device; judging whether the maximum value is larger than a preset temperature threshold value or not; and if the maximum value is larger than the preset temperature threshold value, performing over-temperature protection on the power module. For example, when three-phase bridge arms need to be calculated, the IGBT and the freewheeling diode need to be calculated according to the condition of each phase, and when a single-phase bridge arm with poor heat dissipation is selected for calculation, the IGBT and the freewheeling diode only need to be calculated according to the condition of the single-phase bridge arm, and the maximum value of the temperature value obtained through calculation is compared with the preset temperature threshold value, so as to determine whether to take protective measures. The method specifically comprises the following steps: when the maximum value of the wafer junction temperature exceeds a preset temperature threshold, the over-temperature protection is performed, and a specific processing mode of the over-temperature protection is, for example, a current reduction (power reduction) mode, as shown in fig. 4.
To sum up, according to the over-temperature protection method for the power module in the inverter of the embodiment of the present invention, the temperature model of the traction inverter is established, the actual measured temperature of the temperature detection unit is used, the motor operation condition is combined, the influence of the motor operation condition on the wafer junction temperature of the power module is fully considered, the wafer temperature of the power model of the traction inverter is estimated on line, the power module is monitored and protected from multiple angles through a reasonable protection strategy, and the monitoring accuracy and the real-time performance of the power module are improved on the premise of not obviously increasing the system operation load, so that the power module is effectively protected, and the occurrence of the fault that the power module is damaged due to the fact that the actual temperature is too high is avoided or reduced.
According to the over-temperature protection method for the power module in the inverter, wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperature of a plurality of power devices, and over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
The invention further provides an over-temperature protection device of the power module in the inverter.
Fig. 5 is a block diagram of an overheat protection apparatus of a power module in an inverter according to an embodiment of the present invention. The inverter is used for driving the motor. Based on this, as shown in fig. 5, the overheat protection device 100 for a power module in an inverter includes: a power module 110, a temperature detection unit 120, and a control unit 130.
Among other things, the power module 110 includes a plurality of power devices. The temperature detection unit 120 is used to detect the surface temperatures of the plurality of power devices. The control unit 130 is configured to obtain state information of the motor, state information of the inverter, and parameter information of the power module 110, calculate a wafer junction temperature of at least one power device in the power module 110 according to the state information of the motor, the state information of the inverter, the parameter information of the power module 110, and surface temperatures of the plurality of power devices, and perform over-temperature protection on the power module 110 according to the wafer junction temperature of the at least one power device and a preset temperature threshold.
It should be noted that a specific implementation manner of the over-temperature protection device for a power module in an inverter according to the embodiment of the present invention is similar to a specific implementation manner of the over-temperature protection method for a power module in an inverter according to the embodiment of the present invention, and please refer to the description of the method part specifically, and details are not described here again in order to reduce redundancy.
According to the over-temperature protection device for the power module in the inverter, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and the preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
A further embodiment of the present invention further provides an over-temperature protection device for a power module in an inverter, which includes a memory, a processor, and an over-temperature protection program for the power module in the inverter, where the over-temperature protection program is stored in the memory and is executable on the processor, and when the processor executes the program, the over-temperature protection method for the power module in the inverter described in any one of the above embodiments of the present invention is implemented.
According to the over-temperature protection device for the power module in the inverter, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the over-temperature protection is carried out on the power module according to the wafer junction temperature of the at least one power device and the preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
A further embodiment of the present invention also proposes a vehicle including the over-temperature protection device of the power module in the inverter as described in any one of the above embodiments of the present invention. The over-temperature protection device of the power module in the inverter comprises a memory, a processor and an over-temperature protection program of the power module in the inverter, wherein the over-temperature protection program of the power module in the inverter is stored in the memory and can be operated on the processor, and when the processor executes the program, the over-temperature protection method of the power module in the inverter is realized.
According to the vehicle provided by the embodiment of the invention, the wafer junction temperature of at least one power device in the power module is respectively calculated based on the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of a plurality of power devices, and the power module is subjected to over-temperature protection according to the wafer junction temperature of the at least one power device and a preset temperature threshold value. The transient junction temperature monitoring of the wafer is realized, the influence of the operation condition of the motor on the junction temperature of the wafer of the power module is fully considered in combination with the operation condition of the motor, and the temperature of the wafer can be closer to the real change of the temperature of the wafer, so that the transient monitoring of the temperature rise condition of the semiconductor wafer is effectively carried out, the accuracy and the real-time performance of the monitoring of the power module are improved, the power device can be effectively protected from being damaged due to overhigh temperature in time when the power module operates, and the safety of the power module is improved.
In addition, other configurations and functions of the vehicle according to the embodiment of the present invention are known to those skilled in the art, and are not described herein in detail in order to reduce redundancy.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (12)
1. A method for over-temperature protection of a power module in an inverter, the inverter configured to drive a motor, the method comprising:
acquiring state information of the motor, state information of the inverter and parameter information of the power module, wherein the power module comprises a plurality of power devices, and the parameter information of the power module comprises power loss and thermal resistance values of the plurality of power devices;
acquiring the surface temperatures of the plurality of power devices;
calculating a wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module, and the surface temperatures of the plurality of power devices, wherein calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module, and the surface temperatures of the at least one power device comprises: acquiring the power loss of each power device in the at least one power device; acquiring the thermal resistance value of each power device in the at least one power device; acquiring a weighted value according to the state information of the motor and the state information of the inverter, and weighting the thermal resistance value of each power device according to the weighted value; correspondingly calculating the wafer junction temperature of each power device according to the power loss of each power device, the weighted thermal resistance value of each power device and the surface temperature of each power device; and
and performing over-temperature protection on the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold.
2. The method of claim 1, wherein the wafer junction temperature of the power device is calculated according to the following equation:
Tj＝P*Rt+TNTC
wherein Tj is the wafer junction temperature of the power device, P is the power loss of the power device, Rt is the weighted thermal resistance value of the power device, and T isNTCIs the surface temperature of the power device.
3. The method according to claim 1, wherein the wafer junction temperature of at least one power device in the power module is calculated at preset intervals, the power loss of the power device includes conduction loss and switching loss, and the obtaining the power loss of the power device includes:
acquiring the voltage drop of the power device, the current flowing through the power device and the switching duty ratio of the power device, and calculating the conduction loss of the power device according to the voltage drop of the power device, the current flowing through the power device and the switching duty ratio of the power device;
acquiring the bus voltage of the power module, the current flowing through the power device and the wafer junction temperature of the power device calculated last time, and calculating the switching loss of the power device according to the bus voltage of the power module, the current flowing through the power device and the wafer junction temperature of the power device calculated last time;
and taking the sum of the conduction loss of the power device and the switching loss of the power device as the power loss of the power device.
4. The method for protecting the power module in the inverter from the over-temperature according to claim 1, wherein the obtaining the thermal resistance value of the power device comprises:
acquiring the running time of the inverter;
determining a heat supply network model of the power device;
and calculating the thermal resistance value of the power device according to the running time of the inverter and the heat supply network model of the power device.
5. The method of claim 1, wherein the state information of the motor comprises a rotation speed of the motor, the state information of the inverter comprises a radiator state, and the obtaining the weighted value according to the state information of the motor and the state information of the inverter comprises:
when the rotating speed of the motor is smaller than a preset threshold value, the motor is not locked, and the radiator of the inverter is not in fault, a first weighting coefficient k is used1As the weighted value;
when the rotating speed of the motor is smaller than a preset threshold value, the motor is not locked, and the radiator of the inverter breaks down, a second weighting coefficient k is used2As the weighted value;
when the rotating speed of the motor is smaller than a preset threshold value, the motor is locked, and the radiator of the inverter does not break down, a third weighting coefficient k is used3As the weighted value;
when the rotating speed of the motor is smaller than a preset threshold value, the motor is locked, and the radiator of the inverter breaks down, a fourth weighting coefficient k is used4As the weighted value;
when the rotating speed of the motor is greater than or equal to a preset threshold value, a fifth weighting coefficient k is set5As the weighting value.
6. The method of claim 5, wherein k is k1Less than k2And k is said2Less than k3And k is3Less than k4，k4Is less than or equal to k5Wherein k is1、k2、k3、k4、k5Is a value of more than 0 and 1 or less.
7. The method of claim 1, wherein an inverter bridge having M bridge arms is constructed by the plurality of power devices, M is an integer greater than 1, the state information of the motor includes a rotation speed of the motor, wherein,
when the rotating speed of the motor is smaller than a preset threshold value, the wafer junction temperature of the at least one power device comprises: the wafer junction temperature of the power device of the upper bridge arm of each bridge arm in the M bridge arms and the wafer junction temperature of the power device of the lower bridge arm of each bridge arm in the M bridge arms;
when the rotating speed of the motor is greater than a preset threshold value, the wafer junction temperature of the at least one power device comprises: and the wafer junction temperature of the power device of the upper bridge arm of the preset bridge arm in the M bridge arms and/or the wafer junction temperature of the power device of the lower bridge arm of the preset bridge arm in the M bridge arms.
8. The method of claim 7, wherein the upper leg of each leg comprises a first IGBT and a first freewheeling diode connected in anti-parallel with the first IGBT, and the lower leg of each leg comprises a second IGBT and a second freewheeling diode connected in anti-parallel with the second IGBT, wherein,
the wafer junction temperature of the power device of the upper bridge arm is the wafer junction temperature of the first IGBT, and the wafer junction temperature of the power device of the lower bridge arm is the wafer junction temperature of the second freewheeling diode;
or the wafer junction temperature of the power device of the upper bridge arm is the wafer junction temperature of the first freewheeling diode, and the wafer junction temperature of the power device of the lower bridge arm is the wafer junction temperature of the second IGBT.
9. The method of claim 7, wherein the over-temperature protection of the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold comprises:
determining a maximum value of the wafer junction temperatures of the at least one power device;
judging whether the maximum value is larger than the preset temperature threshold value or not;
and if the maximum value is larger than the preset temperature threshold value, performing over-temperature protection on the power module.
10. An over-temperature protection device for a power module in an inverter, wherein the inverter is used for driving a motor, comprising:
a power module comprising a plurality of power devices;
a temperature detection unit for detecting surface temperatures of the plurality of power devices;
a control unit for acquiring state information of the motor, state information of the inverter, and parameter information of the power module, respectively calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperatures of the plurality of power devices, and performing over-temperature protection on the power module according to the wafer junction temperature of the at least one power device and a preset temperature threshold, wherein the parameter information of the power module includes power loss and thermal resistance values of the plurality of power devices, the calculating the wafer junction temperature of at least one power device in the power module according to the state information of the motor, the state information of the inverter, the parameter information of the power module and the surface temperature of the at least one power device respectively comprises: acquiring the power loss of each power device in the at least one power device; acquiring the thermal resistance value of each power device in the at least one power device; acquiring a weighted value according to the state information of the motor and the state information of the inverter, and weighting the thermal resistance value of each power device according to the weighted value; and correspondingly calculating the wafer junction temperature of each power device according to the power loss of each power device, the weighted thermal resistance value of each power device and the surface temperature of each power device.
11. An over-temperature protection device for a power module in an inverter, comprising a memory, a processor and an over-temperature protection program for the power module in the inverter, wherein the program is stored in the memory and can be executed on the processor, and when the processor executes the program, the over-temperature protection method for the power module in the inverter according to any one of claims 1 to 9 is implemented.
12. A vehicle characterized by comprising the overheat protection apparatus of the power module in the inverter according to claim 10 or 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810994905.3A CN110875710B (en) | 2018-08-29 | 2018-08-29 | Over-temperature protection method and device for power module in inverter and vehicle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810994905.3A CN110875710B (en) | 2018-08-29 | 2018-08-29 | Over-temperature protection method and device for power module in inverter and vehicle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110875710A CN110875710A (en) | 2020-03-10 |
| CN110875710B true CN110875710B (en) | 2021-08-10 |
Family
ID=69714781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810994905.3A Active CN110875710B (en) | 2018-08-29 | 2018-08-29 | Over-temperature protection method and device for power module in inverter and vehicle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110875710B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113759226B (en) * | 2020-06-01 | 2024-04-12 | 安徽威灵汽车部件有限公司 | Vehicle, controller and power device junction temperature estimation method and device thereof |
| CN113765066A (en) * | 2020-06-03 | 2021-12-07 | 中车株洲电力机车研究所有限公司 | Active thermal management control and protection method and device for traction converter |
| CN113765058B (en) * | 2020-06-03 | 2023-05-12 | 株洲中车时代电气股份有限公司 | Chopper circuit protection method and system |
| CN111711409B (en) * | 2020-06-29 | 2022-03-18 | 德尔福科技(苏州)有限公司 | Inverter power module thermal equalization method under motor locked-rotor condition |
| CN112104215B (en) * | 2020-09-14 | 2022-05-27 | 合肥阳光电动力科技有限公司 | Derating protection method and controller of inverter |
| CN112054744B (en) * | 2020-09-18 | 2022-07-05 | 中国第一汽车股份有限公司 | Inverter temperature control method, system, vehicle and medium |
| CN112670962B (en) * | 2020-12-23 | 2023-03-24 | 日立楼宇技术（广州）有限公司 | IGBT over-temperature protection method, system, device and storage medium |
| US11374515B1 (en) | 2020-12-29 | 2022-06-28 | Industrial Technology Research Institute | Operation method and operation device of motor driver for driving motor |
| CN113036725B (en) * | 2021-04-14 | 2022-08-23 | 苏州汇川技术有限公司 | Servo driver protection method, device, equipment and storage medium |
| JP2024504524A (en) | 2021-12-27 | 2024-02-01 | 寧徳時代新能源科技股▲分▼有限公司 | Power module power allocation control method, device, and power module device |
| CN115833548A (en) * | 2021-12-27 | 2023-03-21 | 宁德时代新能源科技股份有限公司 | Power distribution control method and device of power module and power module equipment |
| CN115664171A (en) * | 2022-11-04 | 2023-01-31 | 广东美的制冷设备有限公司 | Protection control method and device for power device, variable frequency controller and storage medium |
| CN116066344B (en) * | 2023-03-30 | 2023-07-21 | 深圳艾为电气技术有限公司 | IGBT-based electric compressor control method and device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1826897A2 (en) * | 2006-02-27 | 2007-08-29 | Honeywell International Inc. | Adaptive Startup Control Method for Electric Drives |
| CN101142737A (en) * | 2005-09-21 | 2008-03-12 | 三菱电机株式会社 | Superheating detection mode of electric motor control device |
| CN102200489A (en) * | 2010-03-23 | 2011-09-28 | 施耐德东芝换流器欧洲公司 | Method for diagnosing heat radiation system |
| JP2011243888A (en) * | 2010-05-21 | 2011-12-01 | Meidensha Corp | Cooling device of semiconductor power converter |
| CN105329105A (en) * | 2014-07-30 | 2016-02-17 | 比亚迪股份有限公司 | Motor controller, IGBT over-temperature protection method and apparatus for same |
| CN106528987A (en) * | 2016-11-03 | 2017-03-22 | 河北工业大学 | Method for accumulated damage computation and life prediction of IGBT module used for electric car |
-
2018
- 2018-08-29 CN CN201810994905.3A patent/CN110875710B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142737A (en) * | 2005-09-21 | 2008-03-12 | 三菱电机株式会社 | Superheating detection mode of electric motor control device |
| EP1826897A2 (en) * | 2006-02-27 | 2007-08-29 | Honeywell International Inc. | Adaptive Startup Control Method for Electric Drives |
| CN102200489A (en) * | 2010-03-23 | 2011-09-28 | 施耐德东芝换流器欧洲公司 | Method for diagnosing heat radiation system |
| JP2011243888A (en) * | 2010-05-21 | 2011-12-01 | Meidensha Corp | Cooling device of semiconductor power converter |
| CN105329105A (en) * | 2014-07-30 | 2016-02-17 | 比亚迪股份有限公司 | Motor controller, IGBT over-temperature protection method and apparatus for same |
| CN106528987A (en) * | 2016-11-03 | 2017-03-22 | 河北工业大学 | Method for accumulated damage computation and life prediction of IGBT module used for electric car |
Non-Patent Citations (2)
| Title |
|---|
| A simple approach on junction temperature estimation for SiC MOSFET dynamic operation within safe operating area;Yuan Zhang et al.;《 2015 IEEE Energy Conversion Congress and Exposition (ECCE)》;20151029;第5704-5707页 * |
| 地铁车辆牵引逆变器IGBT模块的结温与疲劳寿命计算;丁杰 等;《电气工程学报》;20171031;第12卷(第10期);参见第9-18页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110875710A (en) | 2020-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110875710B (en) | Over-temperature protection method and device for power module in inverter and vehicle | |
| EP3267774B1 (en) | Method and apparatus of evaluating heat dissipation system condition for power module | |
| US11248966B2 (en) | Health monitoring and failure prognosis of power electronics devices | |
| Givi et al. | A comprehensive monitoring system for online fault diagnosis and aging detection of non-isolated DC–DC converters’ components | |
| CN110108999B (en) | IGBT module working junction temperature online detection system and method | |
| ES2409004T3 (en) | System and procedure for determining the resistance of the stator winding in an AC motor using motor controllers | |
| EP1583197B1 (en) | Protection of power semiconductor components | |
| CN108548570B (en) | Coolant flow estimation method, coolant temperature estimation device, coolant temperature estimation system and vehicle | |
| CN109698656A (en) | The acquisition methods of electric car IPM electric drive system bus current safety signal | |
| KR101691211B1 (en) | Fault diagnosis apparatus of thermal sensor for hybrid and electronic vehicle and method of the same | |
| Anderson et al. | An on-line fault diagnosis method for power electronic drives | |
| CN104458039A (en) | IGBT module shell temperature real-time estimation method | |
| CN109490739B (en) | Method and module for estimating junction temperature of insulated gate bipolar transistor module on line | |
| US10356854B2 (en) | Power conversion apparatus and power conversion method | |
| CN110614919B (en) | Cooling liquid flow monitoring method and liquid cooling electric drive system | |
| KR101666734B1 (en) | Fault detecting device of inverter by estimating the risistance of switching-on transistor and the method therof | |
| CN109669112A (en) | Junction temperature monitoring method and device for current transformer and IGBT (insulated Gate Bipolar transistor) module of fan | |
| KR102484878B1 (en) | Temperature estimation system and method for switching device | |
| CN111865186A (en) | Fault detection method, motor control method and related equipment | |
| CN205945494U (en) | Intelligence power module and contain its converter | |
| JPWO2016170584A1 (en) | Power converter | |
| JP2012223062A (en) | Semiconductor power converter | |
| CN111781436B (en) | Fault detection device and method for current converter and current conversion system | |
| JP7085453B2 (en) | Diagnostic method for power converters and power converters | |
| Stella et al. | E-Drive SiC MOSFET Inverter with Self Calibrating VON-based Junction Temperature Estimator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |