CN110862825A

CN110862825A - Etching liquid for etching indium tin oxide semiconductor transparent conductive film

Info

Publication number: CN110862825A
Application number: CN201911163144.8A
Authority: CN
Inventors: 王润杰; 陈浩; 卢洪庆; 严増源
Original assignee: Suzhou Boyang Chemicals Co Ltd
Current assignee: Suzhou Boyang Chemicals Co Ltd
Priority date: 2019-11-25
Filing date: 2019-11-25
Publication date: 2020-03-06

Abstract

The invention discloses an etching solution for etching an indium tin oxide semiconductor transparent conductive film, which comprises the following components in parts by weight: 5-12 parts of hydrochloric acid, 25-30 parts of ferric trichloride, 0.5-1 part of surfactant, 0.5-1 part of defoaming agent and 300 parts of deionized water. The invention has the beneficial effects that: the alkyl polyglycoside surfactant has the advantages of low surface tension, no cloud point, strong wetting power, strong compatibility, no toxicity, no harm, no stimulation to skin, rapid and thorough biodegradation, effective reduction of the surface tension of ITO etching solution, moderate speed in the etching process, capability of eliminating foam generated by the alkyl polyglycoside surfactant in the etching process by using the defoaming agent, capability of meeting the high-precision processing requirement of ITO film etching, no damage to light resistance, good protection to etched lines, complete pattern, capability of being etched cleanly at 25 ℃ for 1min, stable etching effect and good repeatability.

Description

Etching liquid for etching indium tin oxide semiconductor transparent conductive film

Technical Field

The invention relates to the technical field of chemical preparations, in particular to an etching solution for etching an indium tin oxide semiconductor transparent conductive film.

Background

The etching solution is widely applied to etching of the transparent conductive film (ITO film), and is convenient for application of the transparent conductive film (ITO film). The existing etching solution has certain defects due to unreasonable formula setting, such as the Chinese patent with application publication number of CN102732253A, which discloses the etching solutionComposition of hydrochloric acid or nitric acid, FeCl₃Nitrate compound or chlorine-based compound, surfactant and pure water, wherein the surfactant is a mixture of anionic surfactant and polyoxyethylene type nonionic surfactant. The etching solution contains FeCl in the process of etching the ITO material₃The etching rate is too high, the etching amount of the side surface is large, the etching solution is unstable, the etching angle and the etching amount of the metal layer are difficult to control, and the repeatability of the effect is influenced.

Disclosure of Invention

The present invention is directed to an etching solution for etching a transparent conductive film of an indium tin oxide semiconductor, so as to solve the above-mentioned problems in the prior art.

In order to achieve the purpose, the invention provides the following technical scheme: an etching solution for etching an indium tin oxide semiconductor transparent conductive film is characterized by comprising the following components in parts by weight:

preferably, the surfactant is an alkyl polyglycoside surfactant.

Preferably, the alkyl polyglycoside surfactant is any one or a mixture of more than one of octyl glucoside, nonyl glucoside, decyl glucoside, undecyl glucoside, dodecyl glucoside, tetradecyl glucoside and hexadecyl glucoside, in an amount of 0.5 to 1 part.

Preferably, the defoaming agent is a polyoxypropylene ether defoaming agent.

Preferably, the polyoxypropylene ether defoamer is any one or a mixture of more than one of polyoxypropylene glycerol ether, polyoxypropylene ethylene oxide glycerol ether, polyoxypropylene glycerol ether, trihydroxy polyoxypropylene ether, fatty alcohol polyoxypropylene ether and bisphenol A polyoxypropylene ether in an amount of 0.5-1 parts.

Preferably, the deionized water has a resistivity of not less than 15 M.OMEGA./cm and a mass fraction of metal ions of less than 10 ppb.

Advantageous effects

1. The alkyl polyglycoside surfactant adopted by the invention is a surfactant which has the advantages of low surface tension, no cloud point, strong wetting power, strong compatibility, no toxicity, harmlessness, no stimulation to skin, rapid and thorough biodegradation, can be compounded with any type of surfactant and has obvious synergistic effect, not only can effectively reduce the surface tension of ITO etching solution and generate the functions of permeation and infiltration, but also has moderate etching rate in the etching process, and the edge of a circuit obtained by etching is clear and has no side etching and no pinholes or gaps;

2. the polyoxypropylene ether defoaming agent adopted by the invention can eliminate foams generated by alkyl polyglycoside surfactants in the etching process, so that no residue is generated after etching, less foams are generated, and the high-precision processing requirement of ITO film etching can be met;

3. when the product of the invention is used for etching, the product has no damage to light resistance, good protection to etching lines, complete pattern, clean etching at 25 ℃ for 1min, complete pattern after etching at 25-30 ℃ for 10min, stable etching effect and good repeatability.

Detailed Description

The following are specific examples of the present invention and further describe the technical solutions of the present invention, but the present invention is not limited to these examples.

Example 1

An etching solution for etching an indium tin oxide semiconductor transparent conductive film is characterized by comprising the following components in parts by weight:

the product of the embodiment is etched to form an ITO film, the ITO film is completely etched at 25 ℃ within 1min, the pattern is complete, the photoresist is not damaged, the etched lines are well protected, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period.

Example 2

the product of the embodiment is etched to form an ITO film, the ITO film is completely etched at 25 ℃ for 3min, the pattern is complete, the photoresist is not damaged, the etched lines are well protected, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period.

Example 3

the product of the embodiment is etched to form an ITO film, the ITO film is completely etched at 25 ℃ within 6min, the pattern is complete, the photoresist is not damaged, the etched lines are well protected, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period.

Example 4

the product of the embodiment is subjected to ITO film etching at 30 ℃ for 1min, the pattern is still complete, the etching effect is stable, the repeatability is good, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period.

Example 5

the product of the embodiment is subjected to ITO film etching, the pattern is still complete, the etching effect is stable, the repeatability is good, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period, and the etching time is 3min at 30 ℃.

Example 6

the product of the embodiment is subjected to ITO film etching, the pattern is still complete, the etching effect is stable, the repeatability is good, in other words, the edge of the circuit obtained by etching is clear and has no side etching, and no change exists in the time period.

Example 7

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the content of the present invention within the scope of the protection of the present invention.

Claims

1. An etching solution for etching an indium tin oxide semiconductor transparent conductive film is characterized by comprising the following components in parts by weight:

2. the etching solution for etching an indium tin oxide semiconductor transparent conductive film according to claim 1, characterized in that: the surfactant is an alkyl polyglycoside surfactant.

3. The etching solution for etching an indium tin oxide semiconductor transparent conductive film according to claim 2, characterized in that: the alkyl polyglycidyl surfactant is any one or a mixture of more than one of octyl glucoside, nonyl glucoside, decyl glucoside, undecyl glucoside, dodecyl glucoside, tetradecyl glucoside and hexadecyl glucoside, wherein the alkyl polyglycidyl surfactant is 0.5-1 part.

4. The etching solution for etching an indium tin oxide semiconductor transparent conductive film according to claim 1, characterized in that: the defoaming agent is a polyoxypropylene ether defoaming agent.

5. The etching solution for etching an indium tin oxide semiconductor transparent conductive film according to claim 4, characterized in that: the polyoxypropylene ether defoamer is any one or a mixture of more than one of polyoxypropylene glycerol ether, polyoxypropylene ethylene oxide glycerol ether, polyoxypropylene glycerol ether, trihydroxy polyoxypropylene ether, fatty alcohol polyoxypropylene ether and bisphenol A polyoxypropylene ether in an amount of 0.5-1 parts.

6. The etching solution for etching an indium tin oxide semiconductor transparent conductive film according to claim 1, characterized in that: the resistivity of the deionized water is not less than 15M omega/cm, and the mass fraction of metal ions is less than 10 ppb.