CN110854007A - Flat-panel X-ray source based on X-ray micro-pixel unit and preparation method thereof - Google Patents
Flat-panel X-ray source based on X-ray micro-pixel unit and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
The application discloses a flat panel X-ray source based on an X-ray micro-pixel unit, which comprises a cathode substrate, an anode substrate and a high-voltage insulating isolator; the cathode substrate and the anode substrate are arranged in parallel relatively, the high-voltage insulation isolator is arranged between the cathode substrate and the anode substrate to isolate the cathode substrate and the anode substrate, and the preparation method of the flat-panel X-ray source based on the X-ray micro-pixel unit comprises the steps of manufacturing the cathode substrate, manufacturing the anode substrate and assembling, wherein the insulating layer covering method can effectively reduce the fringe electric field of the bottom cathode electrode strip and reduce the possibility of discharge phenomenon, so that the anode voltage is further improved, meanwhile, the working stability of the device can be improved, the service life of the device is prolonged, the circular metal targets on the anode substrate are arranged and correspond to the top cathode electrode and the growth source film one by one, and the X-ray micro-pixel unit array arranged in an array mode is formed, so that the flat-panel X-ray source has spatial resolution.
Description
Technical Field
The invention relates to a flat panel X-ray source based on an X-ray micro-pixel unit and a preparation method thereof.
Background
Chinese patent CN201811178220.8, "an addressable nano cold cathode flat X-ray source and a method for making the same", discloses a flat X-ray source using cathode electrode strips and anode electrode strips directly crossed in space, although the addressing function can be achieved, because the cathode electrode exposed outside can easily cause the problem of electrode edge discharge in high-voltage operation, thereby damaging the device, resulting in insufficient anode voltage, and unable to implement transmission imaging of high-density tissue and metal material, meanwhile, the use of the whole anode electrode strip can cause the flat X-ray source not have spatial resolution, unable to form a true X-ray micro-pixel unit array, the whole anode electrode strip does not implement true one-to-one correspondence with the growth source film, which means that other linear regions will also generate X-rays except the disk region corresponding to the growth source film, in order to maintain the conductivity, the width of the linear area of the anode electrode strip is basically unchanged, and when the number of the arrays is larger, the area of the disk area in the anode metal target electrode strip is smaller and smaller, so that the anode metal target electrode strip is more linear, the flat-plate X-ray source does not have the spatial resolution, and the application of the flat-plate X-ray source in the fields of medical imaging, industrial flaw detection, safety inspection and the like is limited to a certain extent.
Disclosure of Invention
The invention aims to provide a flat panel X-ray source based on an X-ray micro-pixel unit, which can improve the anode voltage and has spatial resolution.
The invention is realized by the following technical scheme:
a flat X-ray source based on X-ray micro-pixel units comprises a cathode substrate, an anode substrate and a high-voltage insulating isolator; the cathode substrate and the anode substrate are arranged in parallel relatively, the high-voltage insulating separator is arranged between the cathode substrate and the anode substrate to separate the cathode substrate from the anode substrate, the cathode substrate comprises a cathode substrate, more than two bottom cathode electrode strips arranged on the cathode substrate in parallel, an insulating layer covering the bottom cathode electrode strips, etching through holes which are formed in the insulating layer and enable the bottom cathode electrode strips to be partially exposed, a top cathode electrode formed on the insulating layer, and a growth source film arranged on the top cathode electrode, wherein nanowire cold cathodes are grown on the growth source film, the top cathode electrode is connected with the bottom cathode electrode strips through the etching through holes, the anode substrate comprises an anode substrate, more than two anode electrode strips arranged on the anode substrate in parallel, and a round metal target formed on the anode electrode strips, each anode electrode strip and each bottom cathode electrode strip are vertically crossed in space and provided with a cross point, the top cathode electrode and the growth source film are located at the cross point, the top cathode electrodes are arranged on the bottom cathode electrode strips in an array mode, the circular metal targets are located at the cross point, the circular metal targets are arranged on the anode electrode strips in an array mode, and the growth source film and the circular metal targets form an X-ray micro-pixel unit.
The growth source film is arranged on the top cathode electrode, and the bottom cathode electrode strip is buried under the insulating layer, so that the bottom cathode electrode strip can be prevented from being directly exposed outside, and the discharge problem caused by the edge of the electrode strip under high voltage is solved. Particularly, the growth source film can completely cover the top cathode electrode, the discharge position of the top cathode electrode is mostly arranged at the edge of the top cathode electrode, and the covering of the top cathode electrode by the growth source film is equivalent to a protection effect on the edge of the top cathode electrode.
The circular metal targets are arranged on the anode electrode strips, the growth source films and the circular metal targets can correspond one to form an X-ray micro-pixel unit, so that other linear areas outside the disc area can not generate X-rays, and when the number of arrays is increased, the arrays can still be kept in a string shape, so that the flat-panel X-ray source has spatial resolution.
The cathode substrate and the anode substrate are oppositely and parallelly arranged, so that each anode electrode strip and each bottom cathode electrode strip are vertically crossed in space and have a cross point, and the plurality of anode electrode strips and the plurality of bottom cathode electrode strips are vertically crossed, so that the cross points are arranged in an array form. The growth source film arranged on the top cathode electrode and the round metal target are positioned on the cross point to jointly form an X-ray micro-pixel unit, so that the addressing function based on the X-ray micro-pixel unit is realized.
During operation, the anode electrode strip is connected with an external high-voltage power supply, the bottom cathode electrode strip is grounded, and the voltage of the external high-voltage power supply is greater than 6 KV. When one or more of the anode electrode strips are connected with an external high-voltage power supply, one or more of the bottom cathode electrode strips are grounded, and X rays are generated at the intersection points of the anode electrode strips connected with the external high-voltage power supply and the grounded bottom cathode electrode strips; further, the external high voltage power supply voltage ranges from 10kV to 150 kV.
The rest anode electrode strips and the bottom cathode electrode strips can be selected not to be connected with an external high-voltage power supply and grounded, namely suspended. X-ray emission can be generated at the crossed position of the anode electrode strip and the cathode electrode strip of the access circuit, and X-ray emission can not be generated in units which are not accessed into the circuit, so that the number of the anode electrode strips and the cathode electrode strips in the access circuit directly influences the number of micro units in the flat-panel X-ray source.
Further, the nanowire cold cathode is a zinc oxide nanowire, a copper oxide nanowire, a tungsten oxide nanowire, a molybdenum oxide nanowire, an iron oxide nanowire, a titanium oxide nanowire or a tin oxide nanowire.
Further, the growth source thin film is prepared from any one of zinc, copper, tungsten, molybdenum, iron, titanium and tin, and the thickness of the growth source thin film ranges from 0.3 μm to 5 μm.
Furthermore, the shape of the growth source film is a symmetrical graph, and the diameter or the side length of the growth source film is 5-500 mu m; the distance between the adjacent growth source films is 0.1-10 times of the diameter or the side length. The growth source film is circular, annular or polygonal in shape.
Furthermore, the cathode substrate is composed of a large-area silicon wafer, glass, quartz glass or ceramic substrate; the bottom cathode electrode strip and the top cathode electrode are prepared by one or a combination of more of Cr, Al, Ti, Cu, ITO, IZO, AZO, FTO and LTFO, and the thickness range of the bottom cathode electrode strip and the top cathode electrode is 0.1-2 μm; the top cathode electrode is circular or polygonal in shape.
Further, the insulating layer is made of any one or a combination of silicon oxide, silicon nitride or aluminum oxide, and the thickness of the insulating layer is 1-5 μm. The number of the insulating layers is one or more, and the insulating film can be prepared by adopting a general film preparation method, such as electron beam evaporation, magnetron sputtering, chemical vapor deposition and the like.
The bottom cathode electrode strip is covered by the insulating layer, so that the direct spatial intersection of the bottom cathode electrode strip and the edge of the anode electrode strip can be avoided, the fringe electric field of the bottom cathode electrode strip is effectively reduced, the possibility of discharge is reduced, the anode voltage is further improved, the working stability of the device is improved, the service life of the device is prolonged, and the practical application of the device in the fields of medical imaging, industrial flaw detection, safety inspection and the like is widened.
Furthermore, the anode substrate is composed of a large-area silicon wafer, glass, quartz glass or ceramic substrate; the anode electrode strip is prepared by one or a plurality of combinations of ITO, IZO, AZO, FTO and LTFO, and the thickness range of the anode electrode strip is 0.1-2 μm; the round metal target is prepared by combining one or more than two of tungsten, molybdenum, rhodium, silver, copper, gold, chromium, aluminum, niobium, tantalum and rhenium, and the thickness of the round metal target is 0.2-1000 mu m. The anode electrode strips only serve as a conductive connection, and the part generating X-rays is a circular metal target.
Further, the anode electrode strip is prepared by a metal shadow mask and a vacuum coating technology, or by a photoetching technology, an etching technology, a vacuum coating technology and a stripping technology, or directly by screen printing or ink-jet printing. The vacuum coating technology comprises magnetron sputtering, electron beam evaporation and vacuum thermal evaporation, and the photoetching technology can adopt ultraviolet photoetching.
Further, the high-voltage insulating spacer is made of glass, quartz, ceramic or insulating plastic; the height of the high voltage insulating spacer is 0.5mm-100 mm.
Another object of the present invention is to provide a method for preparing a flat panel X-ray source based on X-ray micro-pixel cells, comprising the steps of:
s1, manufacturing a cathode substrate and an anode substrate:
the cathode substrate comprises the following steps:
manufacturing a bottom cathode electrode strip on a cathode substrate; covering an insulating layer on the bottom cathode electrode strip; etching the insulating layer to manufacture an etched through hole positioned on the bottom cathode electrode strip; manufacturing a top cathode electrode connected with the bottom cathode electrode strip on the etched through hole; depositing a growth source film; carrying out thermal oxidation on the growth source film to grow a nanowire cold cathode to obtain a cathode substrate;
the preparation steps of the anode substrate are as follows:
manufacturing an anode electrode strip on an anode substrate; manufacturing a circular metal target array on the anode electrode strip to obtain an anode substrate;
s2, assembling, namely arranging the cathode substrate and the anode substrate which are prepared in the steps in parallel relatively, wherein the nanowire cold cathode on the cathode substrate faces to the round metal target on the anode substrate, and the growth source films correspond to the round metal target one by one; the cathode substrate and the anode substrate are isolated and fixed by high-voltage insulating separators, each anode electrode strip and each bottom cathode electrode strip are ensured to be mutually vertical in space and to have a cross point, the top cathode electrode, the growth source film and the circular metal target are positioned at the cross point, and the circular metal target and the growth source film form an X-ray micro-pixel unit.
The bottom cathode electrode strip and the top cathode electrode are prepared by a metal shadow mask and a vacuum coating technology, or by photoetching, etching technology, vacuum coating and stripping technology, or directly by screen printing or ink-jet printing. The vacuum coating technology comprises magnetron sputtering, electron beam evaporation and vacuum thermal evaporation, and the photoetching technology can adopt ultraviolet photoetching. The etched through hole is prepared through an etching process, and general etching methods such as wet etching, reactive ion etching and the like can be adopted. The growth source film can be deposited on the top cathode electrode by a magnetron sputtering method, a vacuum thermal evaporation method or an electron beam evaporation method.
Further, the thermal oxidation method comprises a heating process and a heat preservation process, wherein the heating rate of the heating process is 1-30 ℃/min; the heat preservation temperature in the heat preservation process is 300-600 ℃, the heat preservation time is 1-600 min, and the natural cooling is carried out to the room temperature after the heat preservation is finished.
Further, Ar and H are introduced in the temperature rising process and the heat preservation process2、N2、O2One or two or more of the combined gases. The growth of the zinc oxide nanowire, the copper oxide nanowire, the tungsten oxide nanowire, the molybdenum oxide nanowire, the iron oxide nanowire, the titanium oxide nanowire or the tin oxide nanowire is related to the oxygen concentration, so that the growth of the nanowire can be controlled by introducing gas to change the oxygen concentration.
Compared with the prior art, the invention has the beneficial effects that:
the nano cold cathode flat X-ray source is manufactured by adopting an insulating layer covering method, the bottom cathode electrode strip is covered by the insulating layer, the direct crossing of the bottom cathode electrode strip and the anode electrode strip in space is avoided, the fringe electric field of the bottom cathode electrode strip is effectively reduced, the possibility of discharge phenomenon is reduced, the further improvement of the anode voltage is realized, meanwhile, the working stability of the device can be improved, and the service life of the device is prolonged.
The circular metal targets are arranged on the anode electrode strips, the growth source films can be in one-to-one correspondence with the circular metal targets in the true sense to form X-ray micro-pixel units, so that other linear areas outside the disc area cannot generate X-rays, and when the number of arrays is increased, the linear areas can still be independently distributed, so that the flat X-ray source has spatial resolution, the flat X-ray source can be applied to the fields of medical imaging, industrial flaw detection, safety inspection and the like, and the image definition is facilitated, and the images can be analyzed and reconstructed in the later period.
The top cathode electrodes are arranged on the bottom cathode electrode strips in an array form, the round metal targets are arranged on the anode electrode strips in an array form, and the anode electrodes and the cathode electrodes are vertically arranged in space to emit X rays point by point, line by line and in a partition manner, so that an addressing function is realized.
Drawings
FIG. 1 is a structural cross-sectional view of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention;
FIGS. 2(a) - (g1)/(g2) are diagrams of the steps in the fabrication process of a flat panel X-ray source cathode substrate based on X-ray micro-pixel units;
FIG. 3 is a schematic structural diagram of a cathode substrate of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention;
FIGS. 4(a) - (c) are diagrams of the steps of a manufacturing process of an anode substrate of a flat panel X-ray source based on X-ray micro-pixel units;
FIG. 5 is a schematic structural diagram of an anode substrate of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention;
FIG. 6 is a schematic diagram of the overall structure of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention;
FIG. 7 is a cross-sectional view of another structure of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention;
FIG. 8 is a schematic diagram of the overall structure of a nano-cold cathode flat panel X-ray source of comparative example 1;
description of the reference numerals
A cathode substrate 10, an anode substrate 20, a high voltage insulating spacer 30, a cathode substrate 11, a bottom cathode electrode strip 12, an insulating layer 13, an etched via 14, a top cathode electrode 15, a growth source film 16, a nanowire cold cathode 17, an anode substrate 21, an anode electrode strip 22, a circular metal target 23, a comparative example cathode substrate 110, a comparative example anode substrate 120, a comparative example high voltage insulating spacer 130, a comparative example cathode substrate 111, a comparative example cathode electrode strip 112, a comparative example growth source film 113, a comparative example nanowire cold cathode 114, a comparative example anode substrate 121, a comparative example anode metal target strip 122.
Detailed Description
The present invention will be further described with reference to the following embodiments.
Example 1
Fig. 1 is a schematic structural diagram of a flat panel X-ray source based on X-ray micro-pixel units according to the present invention.
The nano cold cathode flat X-ray source comprises a cathode substrate 10, an anode substrate 20 and a high-voltage insulating separator 30. The cathode substrate 10 and the anode substrate 20 are oppositely disposed in parallel, and the high voltage insulating spacer 30 is disposed between the cathode substrate 10 and the anode substrate 20 and separates and fixes the cathode substrate 10 and the anode substrate 20. The cathode substrate 10 and the anode substrate 20 have a certain distance therebetween.
The cathode substrate 10 includes a cathode substrate 11, at least two bottom cathode electrode strips 12 arranged in parallel on the cathode substrate 11, an insulating layer 13, an etched through hole 14, a top cathode electrode 15, a growth source film 16, and a nanowire cold cathode 17. The bottom cathode electrode strips 12 are arranged parallel to each other on the side of the cathode substrate 11 facing the anode base plate 20. The insulating layer 13 is arranged on the bottom cathode electrode strip 12. The etched via 14 is disposed in the insulating layer 13 and partially exposes the bottom cathode electrode 12. The top cathode electrode 15 is disposed on the etched via 14. The growth source film 16 is grown on the top cathode electrode 15. The growth source film 16 is provided with a nanowire cold cathode 17 which is grown in a direction perpendicular to the growth source film 16.
The anode substrate 20 includes an anode substrate 21, two or more anode electrode strips 22 disposed in parallel on the anode substrate 21, and a circular metal target 23 formed on the anode electrode strips.
The manufacturing method of the flat-panel X-ray source based on the X-ray micro-pixel unit comprises the steps of manufacturing a cathode substrate, manufacturing an anode substrate and combining the flat-panel X-ray source. The method comprises the following specific steps:
s1, manufacturing a cathode substrate 10 and an anode substrate 20.
A cathode substrate 10 is produced. As shown in FIGS. 2(a) - (g1)/(g2) and FIG. 3, the specific steps are as follows:
(1) cleaning and blow-drying the cathode substrate 11; the cathode substrate 11 is large-area glass.
(2) Manufacturing cathode electrode strips 12 on a cathode substrate 11; the bottom cathode electrode stripes 12 are ITO. The bottom cathode electrode strip 12 is 1 μm thick and rectangular in shape. The bottom cathode electrode strip 12 is prepared by a vacuum coating technology, a photoetching technology and an etching technology. The vacuum coating technology is magnetron sputtering, the photoetching technology is ultraviolet photoetching, and the etching process is a wet etching process.
(3) An insulating layer 13 is deposited on the bottom cathode electrode stripes 12. The insulating film as the insulating layer 13 is composed of a silicon oxide insulating film, the insulating layer 13 is prepared by general chemical vapor deposition, and the thickness of the insulating layer is 3 μm.
(4) The insulating layer 13 is etched locally to obtain etched vias 14 for connecting the top cathode electrode and the corresponding bottom cathode electrode strips. The etched via 14 may be made by a reactive ion etching process.
(5) A top cathode electrode 15 is prepared over the etched via 13. The top cathode electrode 15 is connected to the corresponding bottom cathode electrode strip 12 by means of etched through holes 14 in the insulating layer 13. The top cathode electrode 15 is ITO, and the top cathode electrode 15 has a thickness of 1 μm and is circular in shape. The top cathode electrode 15 is prepared by a vacuum coating technology, a photoetching technology and an etching technology. The vacuum coating technology is magnetron sputtering, the photoetching technology is ultraviolet photoetching, and the etching process is a wet etching process.
(6) Photoetching and positioning a nanowire cold cathode 17 growth area on the top cathode electrode 15, and then depositing a growth source film 16; the growth source film 16 is zinc, and the thickness of the growth source film is 2.5 mu m; the growth source thin film 16 is deposited on the top cathode electrode 15 by an electron beam evaporation method, the shape of the growth source thin film is circular, the diameter of the growth source thin film is 250 μm, and the distance between the adjacent growth source thin films 16 is 1250 μm.
(7) The nanowire cold cathode 17 is grown on the growth source film 16 by a thermal oxidation method, and the cathode substrate 10 is obtained. The growth process of the thermal oxidation method is carried out in a box-type furnace, the heating rate of the thermal oxidation method is 15 ℃/min, and Ar can be introduced in the heating process. The heat preservation temperature range of the thermal oxidation process is 450 ℃, the heat preservation time range is 300min, and Ar can be introduced in the heat preservation process. And finally, naturally cooling to room temperature. The obtained nano-wire is a zinc oxide nano-wire.
An anode substrate 20 is produced. As shown in fig. 4(a) - (c) and fig. 5, it is a flow chart for manufacturing the anode substrate of the nano-cold cathode flat panel X-ray source of the present invention. The specific manufacturing steps are as follows:
(1) cleaning and blow-drying the anode substrate 21; the anode substrate 21 is large-area quartz glass.
(2) Making anode electrode strips 22 on an anode substrate 21; the anode electrode strips 22 are made of ITO, the thickness range of the anode electrode strips 22 is 1 mu m, and the anode electrode strips are rectangular. The anode electrode strips 22 are deposited on the side of the anode substrate 21 facing the cathode base plate 10. The anode electrode strip 22 is prepared by a vacuum coating technology, a photoetching technology and an etching technology. The vacuum coating technology is magnetron sputtering, the photoetching technology is ultraviolet photoetching, and the etching process is a wet etching process.
The circular metal target 23 is molybdenum, and the circular metal target 23 has a thickness ranging from 500 μm and a circular shape. The circular metal targets 23 are deposited on the side of the anode electrode strips 22 facing the cathode substrate 10. The circular metal target 23 is prepared by a vacuum coating technology, a photoetching technology and an etching technology. The vacuum coating technology is magnetron sputtering, the photoetching technology is ultraviolet photoetching, and the etching process is a wet etching process.
S2, assembling the nano cold cathode flat X-ray source as shown in figure 6.
(1) Arranging the cathode substrate 10 and the anode substrate 20 in parallel relatively, wherein the nanowire cold cathode 17 of the cathode substrate 10 faces the anode electrode strip 22 of the anode substrate 20;
(2) the bottom cathode electrode strips 12 and the anode electrode strips 22 are ensured to be mutually vertical in space and have cross points;
(3) the top cathode electrode 15 and the growth source film 16 provided on the top cathode electrode are ensured to be located at the intersection.
(4) Circular metal targets are guaranteed to be located at the intersections and to correspond one-to-one to the growth source films 16.
(5) The high voltage insulating spacer 30 is disposed at the edge of the cathode substrate 10 and the anode substrate 20 to separate and fix them. The high voltage insulating spacer 30 is made of ceramic and has a height of 5 mm.
As shown in fig. 6, the structure in this patent is to realize the addressing function by the vertical arrangement of the anode electrode and the cathode electrode, without arranging the exposed gate electrode on the cathode substrate, and simultaneously burying the bottom cathode electrode bar under the insulating layer, thereby effectively reducing the discharge problem of the device.
Example 2
The structure of the nano cold cathode flat X-ray source is substantially the same as that of example 1, except that the growth source film 16 may completely cover the top cathode electrode 15 to prevent the top cathode electrode 15 from edge high voltage discharge, as shown in fig. 7.
Example 3
The manufacturing method of the flat panel X-ray source based on the X-ray micro-pixel unit is basically the same as that of the embodiment 1, except that,
a cathode substrate 10 is produced.
(1) The cathode substrate 11 is a large-area silicon wafer.
(2) The bottom cathode electrode stripes 12 are Cr. The thickness of the bottom cathode electrode strip 12 is 0.1 μm,
(3) the insulating film as the insulating layer 13 is composed of a silicon nitride insulating film; the thickness of the insulating layer is 1 μm;
(4) the top cathode electrode 15 is Cr, and the thickness of the top cathode electrode 15 is 0.1 μm;
(5) photoetching and positioning a nanowire cold cathode 17 growth area on the top cathode electrode 15, and then depositing a growth source film 16; the growth source film 16 is copper, and the thickness of the growth source film is 0.3 mu m; the diameter of the growth source thin film is 5 μm, and the interval between the adjacent growth source thin films 16 is 50 μm.
(6) The growth process of the thermal oxidation method is carried out in a box-type furnace, the heating rate of the thermal oxidation method is 1 ℃/min, and Ar can be introduced in the heating process. The heat preservation temperature range of the thermal oxidation process is 600 ℃, and the heat preservation time range is 600 min.
An anode substrate 20 is produced.
(1) The anode substrate 21 is a large-area ceramic substrate.
(2) The anode electrode strips 22 are AZO, and the thickness range of the anode electrode strips 22 is 0.1 μm.
The circular metal target 23 is tungsten, and the thickness of the circular metal target 23 is in the range of 0.2 μm.
And S3, assembling the nano cold cathode flat X-ray source.
(1) The high voltage insulating spacer 30 is made of insulating plastic and has a height of 0.5 mm.
Example 4
The manufacturing method of the flat panel X-ray source based on the X-ray micro-pixel unit is basically the same as that of the embodiment 1, except that,
a cathode substrate 10 is produced.
(1) The cathode substrate 11 is large-area glass.
(2) The bottom cathode electrode stripes 12 are Ti. The thickness of the bottom cathode electrode strip 12 is 2 μm,
(3) the insulating film as the insulating layer 13 is composed of an alumina insulating film; the thickness of the insulating layer is 5 μm;
(4) the top cathode electrode 15 is Ti, and the thickness of the top cathode electrode 15 is 2 μm;
(5) the growth source film 16 is titanium, and the thickness of the growth source film is 5 microns; the diameter of the growth source thin film is 500 μm, and the interval between the adjacent growth source thin films 16 is 50 μm.
(6) The growth process of the thermal oxidation method is carried out in a box-type furnace, the heating rate of the thermal oxidation method is 30 ℃/min, and Ar can be introduced in the heating process. The heat preservation temperature range of the thermal oxidation process is 300 ℃, and the heat preservation time range is 20 min.
An anode substrate 20 is produced.
(1) The anode substrate 21 is a large-area silicon wafer.
(2) The anode electrode strip 22 is LTFO and the thickness of the anode electrode strip 22 is in the range of 2 μm.
The circular metal target 23 is tungsten, and the thickness of the circular metal target 23 is in the range of 1000 μm.
And S3, assembling the nano cold cathode flat X-ray source.
(1) The high voltage insulating spacer 30 is made of insulating plastic and has a height of 100 mm.
Comparative example 1
As shown in fig. 8, the present comparative example is different from example 1 in that the comparative example cathode substrate 110 of the present comparative example includes only the comparative example cathode substrate 111, the comparative example cathode electrode stripes 112, and the comparative example growth source thin film 113, and the comparative example anode substrate 120 includes only the comparative example anode substrate 121 and the comparative example anode metal target stripes 122. The concrete structure is as follows:
the nano-cold cathode flat panel X-ray source includes a comparative example cathode substrate 110, a comparative example anode substrate 120, a comparative example high voltage insulating spacer 130. The comparative example cathode substrate 110 and the comparative example anode substrate 120 are oppositely disposed in parallel, and the comparative example high voltage insulating spacer 130 is disposed between the comparative example cathode substrate 110 and the comparative example anode substrate 120 and fixes the comparative example cathode substrate 110 and the comparative example anode substrate 120 in a spaced-apart manner. The comparative example cathode substrate 110 and the comparative example anode substrate 120 have a certain distance therebetween.
The comparative example cathode substrate 110 includes a comparative example cathode substrate 111, two or more comparative example cathode electrode stripes 112 arranged in parallel on the comparative example cathode substrate 111, and a plurality of comparative example growth source films 113 arranged independently of each other on the cathode electrode stripes. The comparative example cathode electrode stripes 112 are arranged parallel to each other on the side of the comparative example cathode substrate 111 facing the comparative example anode substrate 120. The plurality of comparative growth source thin films 113 are arranged in an array on the comparative cathode electrode strip 112. A comparative example nanowire cold cathode 114 is grown on the comparative example growth source thin film 113 in a direction perpendicular to the comparative example growth source thin film 113. The comparative example cathode substrate 111 may be a large area glass. The comparative example cathode electrode strip 112 was ITO. The comparative example cathode electrode strip 112 had a thickness of 1 μm and was rectangular in shape. The comparative example cathode electrode strip 112 was prepared by metal shadow mask and vacuum coating techniques. The comparative example growth source thin film 113 was prepared from zinc, and the thickness of the comparative example growth source thin film 113 was 1.2 μm. The comparative example growth source thin film 113 may be deposited on the comparative example cathode electrode stripes 112 by an electron beam evaporation method. The comparative example growth source thin films 113 have a circular shape with a diameter of 250 μm, and the interval between the adjacent comparative example growth source thin films 113 is 5 times the diameter. The comparative example nanowire cold cathode 114 obtained by the growth of the aforementioned comparative example growth source thin film 113 is a zinc oxide nanowire.
The comparative example anode substrate 120 includes a comparative example anode substrate 121 and two or more comparative example anode metal target strips 122 disposed in parallel on the comparative example anode substrate 121. The comparative example anode metal target strip 122 is provided on the side of the comparative example anode substrate 121 facing the comparative example cathode substrate 110. Each of the comparative example anode metal target strips 122 is spatially orthogonal to each of the cathode electrode strips on the cathode substrate with an intersection at which the comparative example growth source film 113 is located.
The comparative example anode substrate 121 may be a large area glass. The comparative example anode metal target strip 122 is a molybdenum metal conductive film, and the comparative example anode metal target strip 122 has a thickness in the range of 1 μm and a rectangular shape. The comparative example anode metallic target strip 122 is deposited on the side of the comparative example anode substrate 121 facing the comparative example cathode substrate 110. The deposition method is an electron beam evaporation method.
The comparative example high-voltage insulating spacer 130 is made of glass and has a height of 50 mm.
Testing of device discharge:
by arbitrarily selecting one anode electrode strip/anode metal target electrode strip and applying high voltage, the applied voltage is 35kV, meanwhile, one arbitrarily selected cathode electrode strip is grounded, and the other cathode electrode strips are connected with high level, so that X rays are generated at the intersection points of the selected anode electrode strip/anode metal target electrode strip and the cathode electrode strip, and the point-to-point emission of the X rays can be realized.
The discharge problem of the device is reflected by the highest anode voltage value under stable operation, and the high anode voltage indicates that the discharge is less.
| Examples | Maximum working anode voltage value of device |
| Example 1 | 28kV |
| Example 2 | 30kV |
| Example 3 | 25kV |
| Example 4 | 26kV |
| Comparative example 1 | 15kV |
The reason why the anode voltage values of embodiments 1 to 4 are much higher than that of comparative example 1 is that in comparative example 1, due to the cathode electrode exposed outside, the problem of electrode edge discharge during high-voltage operation is easily caused, and thus the device is damaged, the anode voltage is insufficient, and transmission imaging of high-density tissues and metal materials cannot be realized.
Addressing is realized through the spatial vertical arrangement of anode electrode and cathode electrode, and the edge at top cathode electrode 15 is appeared in the position of discharging of top cathode electrode 15 more simultaneously, covers top cathode electrode 15 with growth source film 16 and is equivalent to play a guard action to top cathode electrode 15 edge, reduces the device problem of discharging. The circular metal target is arranged on the anode electrode strip, so that other linear areas outside the disc area can not generate X rays, pixels can independently emit light, and when the number of the arrays is increased, the pixels can still be kept independent, so that the flat-panel X-ray source has spatial resolution.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A flat X-ray source based on X-ray micro-pixel units comprises a cathode substrate, an anode substrate and a high-voltage insulating isolator; the cathode substrate and the anode substrate are arranged in parallel relatively, the high-voltage insulating separator is arranged between the cathode substrate and the anode substrate to separate the cathode substrate and the anode substrate,
the cathode substrate comprises a cathode substrate, more than two bottom cathode electrode strips arranged on the cathode substrate in parallel, an insulating layer covering the bottom cathode electrode strips, etching through holes formed in the insulating layer and used for enabling the bottom cathode electrode strips to be partially exposed, a top cathode electrode formed on the insulating layer, and a growth source film arranged on the top cathode electrode, wherein a nanowire cold cathode is grown on the growth source film, and the top cathode electrode is connected with the bottom cathode electrode strips through the etching through holes;
the anode substrate comprises an anode substrate, more than two anode electrode strips arranged on the anode substrate in parallel and a circular metal target manufactured on the anode electrode strips,
each anode electrode strip and each bottom cathode electrode strip are vertically crossed in space and provided with a cross point, the top cathode electrode and the growth source film are located at the cross point, the top cathode electrodes are arranged on the bottom cathode electrode strips in an array mode, the circular metal targets are located at the cross point, the circular metal targets are arranged on the anode electrode strips in an array mode, and the growth source film and the circular metal targets form an X-ray micro-pixel unit.
2. The X-ray micro-pixel cell based flat panel X-ray source of claim 1, wherein the nanowire cold cathode is a zinc oxide nanowire, a copper oxide nanowire, a tungsten oxide nanowire, a molybdenum oxide nanowire, an iron oxide nanowire, a titanium oxide nanowire, or a tin oxide nanowire.
3. The flat panel X-ray source based on X-ray micro-pixel units of claim 1, wherein the shape of the growth source thin film is a symmetrical figure, and the diameter or side length of the growth source thin film is 5 μm-500 μm.
4. The flat panel X-ray source based on X-ray micro-pixel units of claim 3, wherein the distance between adjacent growing source films is 0.1-10 times the diameter or side length.
5. The X-ray micro-pixel cell based flat panel X-ray source of claim 1, wherein the bottom cathode electrode strips and the top cathode electrode each have a thickness in the range of 0.1 μ ι η -2 μ ι η, and the top cathode electrode is circular or polygonal in shape.
6. The X-ray micro-pixel cell based flat panel X-ray source of claim 1, wherein the thickness of the anode electrode strips is in the range of 0.1-2 μ ι η.
7. The X-ray micro-pixel cell based flat panel X-ray source of claim 1, wherein the circular metal target has a thickness of 0.2 μ ι η -1000 μ ι η.
8. A preparation method of a flat panel X-ray source based on an X-ray micro-pixel unit is characterized by comprising the following steps:
s1, manufacturing a cathode substrate and an anode substrate:
the cathode substrate comprises the following steps:
manufacturing a bottom cathode electrode strip on a cathode substrate;
covering an insulating layer on the bottom cathode electrode strip;
etching the insulating layer to manufacture an etched through hole positioned on the bottom cathode electrode strip;
manufacturing a top cathode electrode connected with the bottom cathode electrode strip on the etched through hole;
depositing a growth source film;
carrying out thermal oxidation on the growth source film to grow a nanowire cold cathode to obtain a cathode substrate;
the preparation steps of the anode substrate are as follows:
manufacturing an anode electrode strip on an anode substrate;
manufacturing a circular metal target array on the anode electrode strip to obtain an anode substrate;
s2, assembling:
arranging the cathode substrate and the anode substrate which are prepared by the steps in parallel relatively, wherein the nanowire cold cathode on the cathode substrate faces the round metal target on the anode substrate, and the growth source films correspond to the round metal target one by one;
and the cathode substrate and the anode substrate are isolated and fixed by adopting a high-voltage insulating isolator, each anode electrode strip and each bottom cathode electrode strip are ensured to be mutually vertical in space and have a cross point, and the top cathode electrode, the growth source film and the round metal target are positioned at the cross point.
9. The production method according to claim 8, wherein the thermal oxidation method comprises a temperature rise process and a temperature maintenance process, and a temperature rise rate of the temperature rise process is 1 ℃/min to 30 ℃/min; the heat preservation temperature in the heat preservation process is 300-600 ℃, the heat preservation time is 1-600 min, and the natural cooling is carried out to the room temperature after the heat preservation is finished.
10. The method according to claim 9, wherein Ar and H are introduced during the temperature raising and maintaining processes2、N2、O2One or two or more of the combined gases.
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