CN110849468A - Vibration sensor and manufacturing method thereof - Google Patents
Vibration sensor and manufacturing method thereof Download PDFInfo
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- CN110849468A CN110849468A CN201911126176.0A CN201911126176A CN110849468A CN 110849468 A CN110849468 A CN 110849468A CN 201911126176 A CN201911126176 A CN 201911126176A CN 110849468 A CN110849468 A CN 110849468A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
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Abstract
The application relates to a vibration sensor and a preparation method thereof. The vibration sensor comprises a base, a cantilever beam structure and a piezoelectric structure, wherein the cantilever beam structure is in bonding connection with one end of the base. And one end of the cantilever beam structure, which is far away from the bonding connection part, is a vibrating part. The piezoelectric structure comprises a first electrode layer, a piezoelectric layer, a seed layer and a second electrode layer which are sequentially overlapped. The second electrode layer is arranged on the cantilever beam structure. The cantilever beam structure of the vibration sensor is of an integrated structure, and the piezoelectric structure comprises a seed layer, so that the quality of the piezoelectric layer can be improved, and the piezoelectric performance is improved, and the cantilever beam structure is suitable for real-time vibration monitoring of gas turbines, engines, nuclear reactors and other high-temperature severe environments.
Description
Technical Field
The application relates to the technical field of micro electro mechanical systems, in particular to a vibration sensor and a preparation method thereof.
Background
With the rapid advance of industrial modernization, the working temperature of large-scale equipment such as aircraft engines, casting blast furnaces, gas turbines and the like is generally 600 ℃ to 1500 ℃ or even higher. Under the circumstances, whether the real-time monitoring of various parameters in the operation process of the system or the accurate acquisition of relevant working performance data has urgent requirements, and the system also faces serious challenges: 1. a high temperature resistant material; 2. a material molding processing technology; 3. the miniaturization of the sensor can be compatible with the existing gas turbine; 4. and (4) structural design of the sensor.
In the aspect of high-temperature piezoelectric sensor devices, chinese patent document CN1763548A discloses a differential piezoelectric accelerometer capable of withstanding high temperatures of 480 ℃, but its structure is complex, it is difficult to ensure that the device can work normally under the condition of lasting violent vibration, and it cannot be applied to the extreme high-temperature harsh environment inside the gas turbine; the stability, safety, and reliability of the vibration sensor are all problematic.
The vibration sensor disclosed in chinese patent document CN106768289B adopts a design that a ceramic rod is first fixed on a base, and then a plurality of piezoelectric wafers, a metal block, an insulating sheet, a pre-tightening piece threaded with a high temperature lead, and two way electrode wires are sequentially sleeved on the ceramic rod and placed between the piezoelectric wafers, which results in a large size of the whole device, and the precise machine placed in a gas turbine has certain influence on the performance, and is very inconvenient to install.
Although the vibration sensor which is common at present can detect vibration by using the piezoelectric crystal which can resist high temperature, the vibration sensor of the type is large in size, and the designed gas turbine and the engine cannot be compatible with the sensor of the type. The micro-electro-mechanical system vibration sensor at the present stage can meet the basic vibration measurement requirement, but is limited by factors such as silicon-based materials, and the like, and cannot normally work or even can completely fail when the temperature reaches 150 ℃. In summary, the high temperature vibration sensor developed at present is not suitable for real-time monitoring of vibration in severe environments with high temperature, such as gas turbine, engine, nuclear reactor, etc. due to volume and material.
Disclosure of Invention
Based on the above, the application provides a vibration sensor and a preparation method thereof, which are suitable for real-time monitoring of vibration of gas turbines, engines, nuclear reactors and other high-temperature severe environments.
A vibration sensor, comprising:
a base;
the cantilever beam structure is in bonding connection with one end of the base to form a bonding connection part, and one end, far away from the bonding connection part, of the cantilever beam structure is a vibrating part; and
piezoelectric structure, set up in cantilever beam structure, piezoelectric structure includes piezoelectricity response portion, piezoelectricity response portion with vibration portion interval sets up, piezoelectricity response portion is including overlapping first electrode layer, piezoelectric layer, seed layer and the second electrode layer that sets up in proper order, the second electrode layer with cantilever beam structure direct contact.
In one embodiment, the piezoelectric structure further comprises:
the first electrode lead part is arranged on the cantilever beam structure and is electrically connected with the piezoelectric sensing part; and
and the second electrode lead part and the first electrode lead part are arranged on the cantilever beam structure at intervals and are electrically connected with the piezoelectric sensing part.
In one embodiment, the first electrode lead portion and the second electrode lead portion are disposed adjacent to the bonding connection.
In one embodiment, the first electrode lead section includes a first electrode layer and a piezoelectric layer which are sequentially overlapped, and the second electrode lead section includes a seed layer and a second electrode layer which are sequentially overlapped.
In one embodiment, the base and the cantilever structure are made of silicon carbide, and the piezoelectric layer is made of aluminum nitride.
In one embodiment, the cantilever beam structure is a cube, a cuboid or a trapezoid, and the thickness of the cantilever beam structure is 5 μm-50 μm.
In one embodiment, the first electrode layer and the second electrode layer are both made of a titanium-platinum composite structure layer, and the seed layer is made of molybdenum.
A method of making a vibration sensor, comprising:
s10, providing a base and a cantilever beam structure, and bonding the base and the cantilever beam structure under high pressure to form a sensor substrate, wherein the cantilever beam structure is provided with a vibration part and a sensing part;
and S20, sequentially forming a second electrode layer, a seed layer, a piezoelectric layer and a first electrode layer on the sensing part.
In one embodiment, the step of forming, at S20, a second electrode layer, a seed layer, a piezoelectric layer, and a first electrode layer on the sensing part in sequence includes:
forming a first photoresist layer on the vibration part, performing a first photoetching process, and patterning the vibration part and the induction part to form a lower electrode pattern;
growing the second electrode layer by magnetron sputtering, and growing the seed layer on the second electrode layer;
removing the first photoresist layer;
growing the piezoelectric layer by magnetron sputtering, and growing the first electrode layer on the piezoelectric layer;
forming a second photoresist layer on the induction part, and carrying out a second photoetching process to form a first mask layer;
etching the piezoelectric layer and the first electrode layer on the vibrating portion to expose the cantilever beam structure surface;
and removing the second photoresist layer.
In one embodiment, the step of preparing the cantilever structure comprises:
providing a substrate having a bonding region and a peripheral detection region;
forming a third photoresist layer on the bonding region, and performing a third photoetching process to form a second mask layer;
etching the peripheral detection area to form a first groove in the peripheral detection area and define a vibration part and a sensing part;
forming a fourth photoresist layer on the induction part, performing a fourth photoetching process, and growing a third mask layer by utilizing magnetron sputtering;
removing the fourth photoresist layer;
etching the induction part to form a second groove;
and removing the third mask layer to obtain the cantilever beam structure.
The vibration sensor comprises a base, a cantilever beam structure and a piezoelectric structure, wherein the cantilever beam structure is in bonding connection with one end of the base. And one end of the cantilever beam structure, which is far away from the bonding connection part, is a vibrating part. The piezoelectric structure comprises a first electrode layer, a piezoelectric layer, a seed layer and a second electrode layer which are sequentially overlapped. The second electrode layer is arranged on the cantilever beam structure. The cantilever beam structure of the vibration sensor is of an integrated structure, and the piezoelectric structure comprises a seed layer, so that the quality of the piezoelectric layer can be improved, and the piezoelectric performance is improved, and the cantilever beam structure is suitable for real-time vibration monitoring of gas turbines, engines, nuclear reactors and other high-temperature severe environments.
Drawings
FIG. 1 is a block diagram of a vibration sensor provided in accordance with one embodiment of the present application;
FIG. 2 is a block diagram of a vibration sensor provided in accordance with one embodiment of the present application;
FIG. 3 is a flow chart of a method for manufacturing a vibration sensor according to an embodiment of the present application;
FIG. 4 is a schematic view of a silicon carbide substrate provided in accordance with an embodiment of the present application;
FIG. 5 is a schematic illustration of a third photolithography process provided in accordance with an embodiment of the present application;
FIG. 6 is a schematic illustration of a front side etch provided in accordance with an embodiment of the present application;
FIG. 7 is a fourth photolithography illustration provided in accordance with an embodiment of the present application;
FIG. 8 is a schematic view of a magnetron sputtering Ni mask provided in one embodiment of the present application;
FIG. 9 is a schematic illustration of a thick metal strip provided in one embodiment of the present application;
FIG. 10 is a schematic illustration of an ICP etchback as provided by an embodiment of the present application;
FIG. 11 is a schematic view of a wet etch with mask removed according to one embodiment of the present application;
FIG. 12 is a schematic view of a silicon carbide-silicon carbide bond provided by one embodiment of the present application;
FIG. 13 is a schematic illustration of a first photolithography process provided in accordance with an embodiment of the present application;
FIG. 14 is a schematic diagram of a magnetron sputtering process for growing a second electrode layer according to an embodiment of the present disclosure;
FIG. 15 is a schematic view of other layers grown by magnetron sputtering according to an embodiment of the present application;
FIG. 16 is a schematic diagram of a second photolithography process according to an embodiment of the present application;
FIG. 17 is a schematic illustration of ICP etching of a first electrode layer and a piezoelectric layer as provided in one embodiment of the present application;
FIG. 18 is a schematic structural view of a vibration sensor after photoresist stripping is clear according to an embodiment of the present application;
FIG. 19 is a schematic diagram of a COMSOL simulation model provided in accordance with an embodiment of the present application;
fig. 20 is a schematic diagram of a relationship between a cmos ol simulation output voltage and a vibration frequency according to an embodiment of the present application.
Description of the main element reference numerals
Bonded joint 101
Vibrating part 201
Sensing part 202
First electrode lead part 301
Second electrode lead part 302
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, in one embodiment of the present application, a vibration sensor 10 is provided. The vibration sensor 10 includes a base 100, a cantilever beam structure 200, and a piezoelectric structure 300.
The cantilever beam structure 200 is bonded to one end of the base 100 to form a bonded joint 101. The end of the cantilever beam structure 200 away from the bonded connection 101 is a vibrating portion 201. The piezoelectric structure 300 is disposed on the cantilever structure 200. The piezoelectric structure 300 includes a piezoelectric sensing portion 303. The piezoelectric sensing part 303 and the vibration part 201 are arranged at an interval, the piezoelectric sensing part 303 includes a first electrode layer 310, a piezoelectric layer 320, a seed layer 330 and a second electrode layer 340, which are sequentially overlapped, and the second electrode layer 340 is in direct contact with the cantilever beam structure 200.
It will be appreciated that the left side end of the cantilevered beam structure 200 is bonded to the substrate 100 to form a bonded joint 101. The base 100 is used to support and protect the cantilever beam structure 200. The right side end of the cantilever structure 200 is a vibrating portion 201. The bonding joint 101 and the vibrating portion 201 can be used for arranging the piezoelectric structure 300 to form a sensing portion 202. The cantilever plate located in the vibration portion 201 has a thickness greater than that of the cantilever plate located in the sensing portion 202, and thus the vibration portion 201 can be regarded as acting as a mass. A gap is formed between the vibrating portion 201 and the base 100 to ensure that the vibrating portion 201 can vibrate in the gap when operating normally.
It is understood that the materials of the cantilever beam structure 200 and the base 100 are not particularly limited as long as the cantilever beam structure 200 and the base 100 can work normally in severe environments such as high temperature. In an alternative embodiment, the cantilever structure 200 and the base 100 may be both made of silicon carbide. The material of the piezoelectric layer 320 is not particularly limited as long as the piezoelectric layer 320 can normally operate in a severe environment such as a high temperature. In an alternative embodiment, the material of the piezoelectric layer 320 is c-axis oriented aluminum nitride. The cantilever structure 200, the base 100 and the piezoelectric layer 320 are made of high temperature resistant materials, so that the high temperature environment resistance of the whole device is improved. The cantilever structure 200 may be a cube, a cuboid or a trapezoid, and the thickness of the cantilever structure 200 is 5 μm to 50 μm.
It is understood that the materials of the first electrode layer 310 and the second electrode layer 340 are not particularly limited as long as the first electrode layer 310 and the second electrode layer 340 can transfer the charges generated by the piezoelectric layer 320. In an alternative embodiment, the materials of the first electrode layer 310 and the second electrode layer 340 are both titanium-platinum composite structure layers. In an alternative embodiment, the material of the seed layer 330 may be molybdenum. The seed layer 330 can improve the quality of the piezoelectric layer 320, thereby improving the piezoelectric performance of the piezoelectric layer 320.
In this embodiment, when the vibration sensor 10 senses external energy to make the vibration portion 201, the vibration portion 201 may drive the whole cantilever structure 200 to vibrate. The vibration of the cantilever structure 200 can drive the piezoelectric layer 320 in the piezoelectric structure 300 to bend and deform, so that the piezoelectric material has a piezoelectric phenomenon. The seed layer 330 can improve the quality of the piezoelectric layer 320, thereby improving the piezoelectric performance of the piezoelectric layer 320. The first electrode layer 310 and the second electrode layer 340 can transfer out the electric charges generated by the piezoelectric layer 320, and real-time monitoring of vibration in high-temperature severe environments such as gas turbines, engines and nuclear reactors can be realized by detecting the voltage between the first electrode layer 310 and the second electrode layer 340.
Referring to fig. 2, in one embodiment, the piezoelectric structure 300 further includes a first electrode lead portion 301 and a second electrode lead portion 302.
The first electrode lead portion 301 is disposed on the cantilever structure 200 and electrically connected to the piezoelectric sensing portion 303. The second electrode lead portion 302 and the first electrode lead portion 301 are disposed at an interval in the cantilever structure 200, and are electrically connected to the piezoelectric sensing portion 303.
The first electrode lead portion 301 and the second electrode lead portion 302 are electrically connected to an electrode line, respectively, and are used for transferring charges on the first electrode layer 310 and the second electrode layer 340 for further detection. The first electrode lead portion 301 and the second electrode lead portion 302 are arranged at intervals, so that the problem that when the two lead portions are arranged in an overlapping mode, one electrode lead breaks through two electrode layers to cause short circuit is solved.
It is understood that the positions of the first electrode lead portion 301 and the second electrode lead portion 302 are not particularly limited. In an alternative embodiment, the first electrode lead portion 301 and the second electrode lead portion 302 are both disposed near the bonding joint 101. In an alternative embodiment, the first electrode lead portion 301 includes a first electrode layer 310 and a piezoelectric layer 320 which are sequentially disposed to overlap. The second electrode lead portion 302 includes a seed layer 330 and a second electrode layer 340, which are sequentially stacked. In this case, the first electrode lead portion 301 is used to connect a first electrode lead, and the second electrode lead portion 302 is used to connect a second electrode lead.
Referring to fig. 3, in an embodiment of the present application, a method for manufacturing a vibration sensor is provided. The preparation method comprises the following steps:
and S10, providing a base 100 and a cantilever beam structure 200, and bonding the base 100 and the cantilever beam structure 200 at high pressure to form a sensor substrate, wherein the cantilever beam structure 200 is provided with a vibration part 201 and a sensing part 202.
S20, a second electrode layer 340, a seed layer 330, a piezoelectric layer 320, and a first electrode layer 310 are sequentially formed on the sensing portion 202.
In step S10, the materials of the cantilever structure 200 and the base 100 are not particularly limited, as long as the cantilever structure 200 and the base 100 can work normally in severe environments such as high temperature. In an alternative embodiment, the cantilever structure 200 and the base 100 may be both made of silicon carbide.
The left end of the cantilever beam structure 200 is bonded to the substrate 100 to form a bonded joint 101. The base 100 is used to support and protect the cantilever beam structure 200. The right side end of the cantilever structure 200 is a vibrating portion 201. The bonding joint 101 and the vibrating portion 201 can be used for arranging the piezoelectric structure 300 to form a sensing portion 202. The cantilever plate located in the vibration portion 201 has a thickness greater than that of the cantilever plate located in the sensing portion 202, and thus the vibration portion 201 can be regarded as acting as a mass. A gap is formed between the vibrating portion 201 and the base 100 to ensure that the vibrating portion 201 can vibrate in the gap when operating normally.
In step S20, the materials of the first electrode layer 310 and the second electrode layer 340 are not particularly limited as long as the first electrode layer 310 and the second electrode layer 340 can transfer charges generated by the piezoelectric layer 320. In an alternative embodiment, the materials of the first electrode layer 310 and the second electrode layer 340 are both titanium-platinum composite structure layers. In an alternative embodiment, the material of the seed layer 330 may be molybdenum. The seed layer 330 can improve the quality of the piezoelectric layer 320, thereby improving the piezoelectric performance of the piezoelectric layer 320.
In this embodiment, when the vibration sensor 10 senses external energy to make the vibration portion 201, the vibration portion 201 may drive the whole cantilever structure 200 to vibrate. The vibration of the cantilever structure 200 can drive the piezoelectric layer 320 in the piezoelectric structure 300 to bend and deform, so that the piezoelectric material has a piezoelectric phenomenon. The seed layer 330 can improve the quality of the piezoelectric layer 320, thereby improving the piezoelectric performance of the piezoelectric layer 320. The first electrode layer 310 and the second electrode layer 340 can transfer out the electric charges generated by the piezoelectric layer 320, and real-time monitoring of vibration in high-temperature severe environments such as gas turbines, engines and nuclear reactors can be realized by detecting the voltage between the first electrode layer 310 and the second electrode layer 340.
In an alternative embodiment, the step of preparing the cantilever beam structure 200 comprises:
a substrate is provided having a bonding zone 203 and a peripheral detection zone 204. Referring to fig. 4, the substrate needs to be cleaned before the cantilever structure 200 is fabricated. The cleaning step can be that the substrate is placed in a first mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 4:1, and is cleaned for 5 min. And then placing the substrate in a second mixed solution of ammonia water, hydrogen peroxide and deionized water in a volume ratio of 1:1:5, cleaning for 5min, finally placing the substrate in a third mixed solution of hydrochloric acid, hydrogen peroxide and deionized water in a volume ratio of 1:1:4, cleaning for 5min, and spin-drying or blow-drying by using nitrogen.
And forming a third photoresist layer on the bonding region 203, and performing a third photolithography process to form a second mask layer. The specific process of the second mask layer may be to uniformly spin-coat a photoresist on the bonding region 203, and expose and develop the photoresist, as shown in fig. 5.
The peripheral detection region 204 is etched to form a first groove 205 in the peripheral detection region 204 and define a vibration portion 201 and a sensing portion 202. The specific steps of the etching can be placing the silicon wafer into an ICP etching cavity (inductively coupled plasma etching cavity) and utilizing SF6Etching to a depth of 15 μm to form a first trench 205, as shown in FIG. 6, under the conditions of ICP power 1200W, gas pressure 0.5Pa, and SF6Flow rate 50sccm, O2A flow rate of 10sccm and an RF power of 80W.
And forming a fourth photoresist layer on the sensing part 202, performing a fourth photoetching process, and growing a third mask layer by utilizing magnetron sputtering. Forming the fourth photoresist layer is shown in fig. 7. Forming the third mask layer as shown in fig. 8, the third mask layer may be a nickel mask layer. The technological parameters of the sputtering are that the power is 300W, and the sputtering pressure is 4.5 mT.
And removing the fourth photoresist layer. The fourth photoresist layer and the nickel mask layer thereon are stripped away by thick metal stripping, as shown in fig. 9.
The sensing portion 202 is etched to form a second trench 206. The etching process of the step can be carried out with the etching depth of 255 μm and the process conditions of ICP power of 1200W, air pressure of 0.5Pa and SF6Flow rate 50sccm, O2A flow rate of 10sccm and an RF power of 80W. As shown in fig. 10.
And removing the third mask layer to obtain the cantilever beam structure 200. The process of this step may be a wet etch that removes the third mask layer and cleans the substrate with a standard solution, as shown in fig. 11. And cleaning, activating, heating and bonding the machined cantilever beam structure 200 and a new substrate under high pressure, as shown in fig. 12, to obtain the sensor base.
In an alternative embodiment, the step of S20, sequentially forming the second electrode layer 340, the seed layer 330, the piezoelectric layer 320, and the first electrode layer 310 on the sensing part 202 includes:
a specific process of forming a first photoresist layer on the vibration portion 201, performing a first photolithography process, and patterning the vibration portion 201 and the sensing portion 202 to form a lower electrode pattern to form the first photoresist layer may be uniformly spin-coating a photoresist on the vibration portion 201, and performing exposure and development, as shown in fig. 13.
And growing the second electrode layer 340 by magnetron sputtering, and growing the seed layer 330 on the second electrode layer 340. And growing the second electrode layer 340 and the seed layer 330 by magnetron sputtering, as shown in FIG. 14. The second electrode layer 340 is a titanium-platinum composite structure, wherein the thickness of titanium is 40nm, and the thickness of platinum is 120 nm. The seed layer 330 is made of molybdenum, and the thickness of the seed layer 330 is 120 nm.
And removing the first photoresist layer. Ultrasonic stripping with acetone may be used to remove the photoresist and the excess metal layer above the photoresist. At this time, the second electrode layer 340 on the first photoresist layer and the seed layer 330 are also stripped.
The piezoelectric layer 320 is grown by magnetron sputtering and the first electrode layer 310 is grown on the piezoelectric layer 320. Growing the piezoelectric layer 320(AlN, thickness 1.5um) by magnetron sputtering under the experimental conditions of substrate temperature 150 ℃, radio frequency power 200W, sputtering pressure 4.5mT, and nitrogen-argon flow ratio 3:2, and after the whole substrate is cooled to room temperature, growing the first electrode layer 310 by magnetron sputtering, as shown in FIG. 15. The first electrode layer 310 is a titanium-platinum composite structure, wherein the thickness of titanium is 40nm, and the thickness of platinum is 120 nm.
A second photoresist layer is formed on the sensing portion 202, and a second photolithography process is performed to form a first mask layer. The second photoresist layer is located on the first electrode layer 310. As shown in fig. 16.
The piezoelectric layer 320 and the first electrode layer 310 on the vibrating portion 201 are etched to expose the surface of the cantilever structure 200. The etching parameters were ICP power 300W, gas pressure 0.4Pa, BCl3 flow rate 15sccm, Cl2 flow rate 35sccm, and RF power 80W, as shown in FIG. 17.
And removing the second photoresist layer. Namely, ultrasonic cleaning with degumming acetone, and the final structure is shown in fig. 18. In the embodiment, the vibration sensor 10 is prepared through the above process steps, and is used for real-time monitoring of vibration of a gas turbine, an engine, a nuclear reactor and other high-temperature severe environments.
In order to simulate the relationship between the output voltage and the vibration frequency of the vibration sensor 10, simulation software can be used for simulation, and fig. 19 is a schematic diagram of a COMSOL simulation model provided in an embodiment of the present application. A schematic diagram of the relationship between the output voltage and the vibration frequency simulated by using the simulation model is shown in fig. 20. As can be seen from fig. 20, when the vibration frequency of the vibration sensor 10 is 1610Hz, the output voltage is at a maximum value.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A vibration sensor, comprising:
a base (100);
the cantilever structure (200) is in bonding connection with one end of the base (100) to form a bonding connection part (101), and one end, far away from the bonding connection part (101), of the cantilever structure (200) is a vibrating part (201); and
the piezoelectric structure (300) is arranged on the cantilever beam structure (200), the piezoelectric structure (300) comprises a piezoelectric sensing part (303), the piezoelectric sensing part (303) and the vibration part (201) are arranged at intervals, the piezoelectric sensing part (303) comprises a first electrode layer (310), a piezoelectric layer (320), a seed layer (330) and a second electrode layer (340) which are sequentially overlapped, and the second electrode layer (340) is in direct contact with the cantilever beam structure (200).
2. The vibration sensor according to claim 1, wherein the piezoelectric structure (300) further comprises:
a first electrode lead portion (301) disposed on the cantilever structure (200) and electrically connected to the piezoelectric sensing portion (303); and
and a second electrode lead portion (302) which is arranged on the cantilever structure (200) at an interval with the first electrode lead portion (301) and is electrically connected with the piezoelectric sensing portion (303).
3. The vibration sensor according to claim 2, wherein the first electrode lead portion (301) and the second electrode lead portion (302) are each disposed near the bonding connection (101).
4. The vibration sensor according to claim 3, wherein the first electrode lead portion (301) includes a first electrode layer (310) and a piezoelectric layer (320) which are sequentially overlapped, and the second electrode lead portion (302) includes a seed layer (330) and a second electrode layer (340) which are sequentially overlapped.
5. The vibration sensor of claim 4 wherein the base (100) and the cantilever beam structure (200) are both silicon carbide and the piezoelectric layer (320) is aluminum nitride.
6. The vibration sensor according to claim 5, wherein the cantilever beam structure (200) is a cube, a cuboid or a trapezoid, and the cantilever beam structure (200) has a thickness of 5 μm-50 μm.
7. The vibration sensor according to claim 5, wherein the material of the first electrode layer (310) and the material of the second electrode layer (340) are both titanium and platinum composite structure layers, and the material of the seed layer (330) is molybdenum.
8. A method of making a vibration sensor, comprising:
s10, providing a base (100) and a cantilever beam structure (200), and bonding the base (100) and the cantilever beam structure (200) at high pressure to form a sensor substrate, wherein the cantilever beam structure (200) is provided with a vibration part (201) and a sensing part (202);
and S20, sequentially forming a second electrode layer (340), a seed layer (330), a piezoelectric layer (320) and a first electrode layer (310) on the sensing part (202).
9. The method of manufacturing a vibration sensor according to claim 8, wherein the step of forming the second electrode layer (340), the seed layer (330), the piezoelectric layer (320), and the first electrode layer (310) on the sensing section (202) in this order in S20 includes:
forming a first photoresist layer on the vibration part (201), carrying out a first photoetching process, and patterning the vibration part (201) and the induction part (202) to form a lower electrode pattern;
growing the second electrode layer (340) by magnetron sputtering, and growing the seed layer (330) on the second electrode layer (340);
removing the first photoresist layer;
-magnetron sputtering growing the piezoelectric layer (320) and growing the first electrode layer (310) on the piezoelectric layer (320);
forming a second photoresist layer on the induction part (202), and carrying out a second photoetching process to form a first mask layer;
etching the piezoelectric layer (320) and the first electrode layer (310) on the vibrating portion (201) to expose the cantilever beam structure (200) surface;
and removing the second photoresist layer.
10. The method of manufacturing a vibration sensor according to claim 8, wherein the step of manufacturing the cantilever beam structure (200) comprises:
providing a substrate having a bonding zone (203) and a peripheral detection zone (204);
forming a third photoresist layer on the bonding region (203), and performing a third photoetching process to form a second mask layer;
etching the peripheral detection area (204) to form a first groove (205) in the peripheral detection area (204) and define a vibration part (201) and a sensing part (202);
forming a fourth photoresist layer on the induction part (202), carrying out a fourth photoetching process, and growing a third mask layer by utilizing magnetron sputtering;
removing the fourth photoresist layer;
etching the sensing portion (202) to form a second trench (206);
and removing the third mask layer to obtain the cantilever beam structure (200).
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627134A (en) * | 1992-07-08 | 1994-02-04 | Murata Mfg Co Ltd | Acceleration sensor |
| JPH0627137A (en) * | 1992-07-08 | 1994-02-04 | Murata Mfg Co Ltd | Acceleration sensor |
| US20090322183A1 (en) * | 2008-06-30 | 2009-12-31 | Kabushiki Kaisha Toshiba | Inertial sensor and inertial detecting device |
| CN202256381U (en) * | 2011-09-06 | 2012-05-30 | 浙江吉利汽车研究院有限公司 | Piezoelectric film type acceleration sensor |
| CN103420326A (en) * | 2013-08-12 | 2013-12-04 | 天津万兆波分科技有限公司 | MEMS (micro-electromechanical systems) piezoelectric energy collecting device and method for manufacturing same |
| US20190028084A1 (en) * | 2017-07-18 | 2019-01-24 | Samsung Electronics Co., Ltd. | Micromechanical resonator and resonator system including the same |
-
2019
- 2019-11-18 CN CN201911126176.0A patent/CN110849468B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627134A (en) * | 1992-07-08 | 1994-02-04 | Murata Mfg Co Ltd | Acceleration sensor |
| JPH0627137A (en) * | 1992-07-08 | 1994-02-04 | Murata Mfg Co Ltd | Acceleration sensor |
| US20090322183A1 (en) * | 2008-06-30 | 2009-12-31 | Kabushiki Kaisha Toshiba | Inertial sensor and inertial detecting device |
| CN202256381U (en) * | 2011-09-06 | 2012-05-30 | 浙江吉利汽车研究院有限公司 | Piezoelectric film type acceleration sensor |
| CN103420326A (en) * | 2013-08-12 | 2013-12-04 | 天津万兆波分科技有限公司 | MEMS (micro-electromechanical systems) piezoelectric energy collecting device and method for manufacturing same |
| US20190028084A1 (en) * | 2017-07-18 | 2019-01-24 | Samsung Electronics Co., Ltd. | Micromechanical resonator and resonator system including the same |
Non-Patent Citations (1)
| Title |
|---|
| 周雅慧: "微型AlN压电振动能量收集器关键技术研究", 《中国优秀硕士学位论文全文据库 工程科技Ⅱ辑》 * |
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