CN110838324A - Programming method and system of memory - Google Patents
Programming method and system of memory Download PDFInfo
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- CN110838324A CN110838324A CN201810942609.9A CN201810942609A CN110838324A CN 110838324 A CN110838324 A CN 110838324A CN 201810942609 A CN201810942609 A CN 201810942609A CN 110838324 A CN110838324 A CN 110838324A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Abstract
The invention discloses a programming method and a system of a memory. The programming method of the memory includes the steps of applying a program voltage to a memory cell to store data when a program timing B1 is programmed; applying a verify voltage to the memory cell at a verify timing Y1; if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller. The programming method and system of the memory have the advantage of improving the life of the memory.
Description
Technical Field
The embodiment of the invention relates to the technical field of memories, in particular to a programming method and system of a memory.
Background
The Nand flash memory is a nonvolatile memory and has the advantages of high rewriting speed, large storage capacity and the like. When the Nand flash memory is in programming operation, verification failure occurs, and after each verification failure, the amplitude of the programming voltage needs to be increased. In the prior art, the increased amplitudes of the programming voltages are equal every time the programming fails, and when the programming voltage is close to the programming threshold, the programming voltage is increased again, which causes the situation that the programming voltage is much larger than the programming threshold, affects the tunneling oxide film of the memory cell, and reduces the service life of the memory.
Therefore, how to increase the lifetime of the memory becomes a demand in the memory technology field.
Disclosure of Invention
The invention provides a programming method and a programming system of a memory, which aim to solve the technical problem that the service life of the memory is reduced during programming.
In a first aspect, an embodiment of the present invention provides a method for programming a memory, including the following steps: a program timing B1 is a timing for applying a program voltage to a memory cell to store data; applying a verify voltage to the memory cell at a verify timing Y1; if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
Preferably, the magnitude of the program voltage when the program voltage is applied to the memory cell at the program timing B1 is VpgmWhen the programming voltage is applied to the memory cell for the nth time, the amplitude of the programming voltage is Vpgm+(n-1)DvpgmWhere n is a positive integer and n is equal to or greater than 1, D is the number of successfully stored data cells Q that increases in stagesvpgmAnd decreases.
Preferably, the increase D of the programming voltagevpgmFurther comprising a third amplification Dvpgm3When Q is less than num1, the amplification of the program voltage for each verification failure is a first amplification Dvpgm1When num1 is not more than Q < num2, the amplification of the programming voltage of each verification failure is a second amplification Dvpgm2When Q is not less than num2, the amplification of the programming voltage is the third amplification Dvpgm3Num1 is a first threshold for the number of memory cells in which data is successfully stored, and num2 is a second threshold for the number of memory cells in which data is successfully stored.
Preferably, the number of the storage units needing to be stored with data is P, num1 accounts for 40% -60% of P, num2 accounts for 70% -90% of P
Preferably, at program timing B1, a program voltage is applied to the selected word line, a pass voltage is applied to the unselected word lines, 0V is applied to the selected bit line, and a positive voltage is applied to the unselected bit lines.
Preferably, the programming voltage ranges from 12V to 16V.
Preferably, at the verification timing Y1, a verification voltage is applied to the selected word line, the selected bit line is precharged to a precharge voltage, and a pass voltage is applied to the unselected word line; and then, discharging the selected bit line for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the discharged bit line is higher than the first judgment voltage, indicating that the verification is successful and the operation can be finished, and otherwise, indicating that the verification fails, storing data into the memory again and verifying.
Preferably, the verifying voltage ranges from 0V to 1V.
Preferably, the precharge voltage ranges from 1v to 1.2 v.
In a second aspect, the present invention also provides a programming system of a memory, the programming system of the memory including: a program module for applying a program voltage to the memory cell to store data when programming timing B1; the verifying module is used for applying verifying voltage to the storage unit when verifying the time sequence Y1; if the verification fails, after the program timing sequence B1, the program module re-applies at least two programming voltages with amplification to the memory cell, the verification module performs the verification again, and the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
Compared with the prior art, the invention provides the programming method and the system of the memory, after the verification fails, at least two programming voltages with amplification are applied to the memory cells again to perform the verification again, the amplification of the programming voltages is reduced along with the gradual increase of the number Q of the memory cells with successful data storage, the programming voltages are closer to the programming threshold, the amplitude of the programming voltage increase after each verification failure is smaller, even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold a lot, so that the influence on a tunneling oxide film of the memory cells is avoided, the transient programming effect is reduced, the service life of the memory cells of the memory is prolonged, and the programming speed is ensured and the programming efficiency is improved because the programming voltage is large at first.
Drawings
FIG. 1 is a flow chart illustrating a method for programming a memory according to an embodiment of the invention.
Fig. 2 is a schematic chip structure diagram of a memory cell in embodiment a of the invention.
FIG. 3 is a circuit diagram of a memory array according to an embodiment of the present invention.
FIG. 4 is a waveform diagram of voltages at different times in a programming method of a memory according to embodiment A of the present invention.
FIG. 5 is a graph showing the variation of the magnitude of the program voltage with the increase of the number of verification failures in the embodiment A.
FIG. 6 is a block diagram of a programming system of a memory according to embodiment B of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Before discussing exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart may describe the steps as a sequential process, many of the steps can be performed in parallel, concurrently or simultaneously. In addition, the order of the steps may be rearranged. The process may be terminated when its operations are completed, but may have additional steps not included in the figure. The processes may correspond to methods, functions, procedures, subroutines, and the like.
Example A
Referring to fig. 1, fig. 1 is a flow chart illustrating a programming method of a memory according to an embodiment a of the present invention, the programming method of the memory is used for improving the endurance and the usability of read data of the memory to improve the lifespan of the memory, and the programming method of the memory includes the following steps:
step S1: a program timing B1 is a timing for applying a program voltage to a memory cell to store data;
step S2: applying a verify voltage to the memory cell at a verify timing Y1;
step S3: after a program timing B1, at least two program voltages with amplification are applied to the memory cell again for verifying, and the amplification of the program voltage is DvpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
Referring to fig. 2, fig. 2 is a schematic diagram of a chip structure of the memory unit 111. The memory cell 111 includes a substrate 1111, a source 1112, a drain 1113, a tunnel oxide film 1114, a floating gate 1115, and a control gate 1116, the substrate 1111 includes a P-well region thereon, the source 1112 and the drain 1113 are disposed in the P-well region, a channel is formed between the source 1112 and the drain 1113, the tunnel oxide film 1114 is formed over the channel between the source 1112 and the drain 1113, the floating gate 1115 is disposed on the tunnel oxide film 1114, and the control gate 1116 is disposed on the floating gate 1115. It will be appreciated that a dielectric film 1117 is disposed between the control gate 1116 and the floating gate 1115. When no charge is accumulated in the floating gate 1115, that is, when data "1" is written, the threshold value is in a negative state, and the memory cell 111 is turned on by the control gate 1116 being 0V. When electrons are accumulated in the floating gate 1115, that is, when data "0" is written, the threshold shift is positive, and the memory cell is turned off by the control gate 1116 being 0V. However, the memory cell is not limited to storing a single bit, and may store a plurality of bits.
In step S1, step S1 is a programming step, and data is stored in the memory. The memory is preferably a NAND type memory. Referring to fig. 3, fig. 3 is a schematic circuit structure diagram of the memory array. The memory includes n word lines (WL1, WL2, …, WLn), m bit lines (BL1, BL2, …, BLm), a select gate line SGS, a select gate line SGD, and a common source line SL, and a memory cell portion identified by a dashed box 11 is referred to as a memory cell string. Each memory cell string includes a plurality of the above-described memory cells 111 (i.e., MC1 to MCn); a bit line side selection transistor TD connected to the memory cell MCn as one end portion; and a source-line-side selection transistor TS connected to the memory cell MC1 as the other end, the drain of the bit-line-side selection transistor TD being connected to the corresponding 1 bit line BL, and the source of the source-line-side selection transistor TS being connected to the common source line SL. The control gate of the memory cell 111 is connected to a word line WLi (i is 0 to n), the gate of the bit line side selection transistor TD is connected to the selection gate line SGD, and the gate of the source line side selection transistor TS is connected to the selection gate line SGS.
Referring to fig. 4 and 5 together, fig. 4 is a schematic diagram showing waveforms at different times of a programming method of a memory according to the present invention, fig. 5 is a schematic diagram showing a variation of a magnitude of a programming voltage with an increase of verification failure times in embodiment a, and this embodiment provides a specific programming step, in which data is stored in a memory cell MC1, and a programming voltage V is applied to a selected word line WL1 at a programming timing B1pgmA pass voltage is applied to unselected word lines WL2 to WLn, 0V is applied to selected bit line BLm, and a positive voltage is applied to unselected bit lines BL1 to BLm-1. The programming voltage VpgmThe range of (A) is 10 to 18V, preferably 12 to 16V. In a certain programming time, the memory cell with the lower initial threshold voltage has larger threshold voltage increment after being programmed, and conversely, the threshold voltage increment is smaller. Here, as will be understood by those skilled in the art, in the programming operation, it is usually necessary to apply a voltage of 0V to the select gate line SGS and a voltage of about 4V to the select gate line SGDAnd the connected MOS tube is conducted.
In step S2, at the time of verifying timing Y1, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; and then discharging the selected bit line BLm for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the selected bit line BLm is higher than the first judgment voltage, indicating that the programming verification operation is successful, and finishing the operation, otherwise, failing the verification, and needing to store data into the memory again. It will be appreciated that the programming threshold of each memory cell may not be uniform due to materials, processing, etc. when the memory is fabricated. During the programming process, when one or some memory cells are in programming verification, the voltage of the bit line of one or some memory cells in discharging is lower than the first judgment voltage, one or some memory cells successfully store data, and other memory cells fail to store data. It is understood that the first memory cell write data success can occur at the program timing B1, and can also occur after the program timing B1. During the verification, it can be verified that the data stored in some of the memory cells is successful. Preferably, at the time of verification, the number Q of memory cells in which the data was successfully stored is recorded. Preferably, the verify voltage ranges from 0V to 1V. The precharge voltage ranges from 1v to 1.2 v. It is understood that the program timing B1 is a period for simultaneously writing data to a memory cell or a plurality of memory cells, and the verify timing Y1 is a period for verifying a memory cell after writing data at the time of the program timing B1.
In step S3, the verify timing Y1 fails to verify, and the memory cell is applied with the increased amplitude D again at the programming timing B2-BnvpgmUntil the nth program voltage Vpgm+(n-1)Dvpgm(where n is a positive integer, and n.gtoreq.1) is greater than or equal to the programming threshold, and all verification succeeds at the verification timing Yn. In this embodiment, the amplification of the programming voltage DvpgmInversely proportional to the number Q of memory cells in which the data is successfully stored, the larger the programming voltageAmplitude of pressure DvpgmThe smaller, preferably, D is the stepwise increase in the number Q of memory cells into which the data is successfully storedvpgmAnd decreases.
Specifically, assuming that the first threshold of the number of memory cells in which data is successfully stored is num1, the second threshold of the number of memory cells in which data is successfully stored is num2, and when the number Q of memory cells in which data is successfully stored is smaller than the first threshold num1, the increase Dvpgm of the program voltage is Dvpgm1When the number Q of memory cells successfully stored in the data is equal to or greater than the first threshold num1 and less than the second threshold num2, the increase Dvpgm of the program voltage is Dvpgm2When the number Q of memory cells successfully stored in the data is equal to or greater than the second threshold num2, the increase Dvpgm of the program voltage is Dvpgm3. In this embodiment, the increase Dvpgm of the programming voltage1An increase Dvpgm greater than the programming voltage2Increase in programming voltage Dvpgm2An increase Dvpgm greater than the programming voltage3The first threshold num1 of the number Q of memory cells in which data is successfully stored is smaller than the first threshold num2 of the number Q of memory cells in which data is successfully stored. If the number of the memory cells 111 needing to be stored with data is P, num1 accounts for 40% -60% of P, and num2 accounts for 70% -90% of P.
Specifically, at the program timing B2, if the number Q of successfully stored memory cells is less than the first threshold num1, the program voltage V is applied to the selected word line WL1pgm+Dvpgm1A pass voltage is applied to unselected word lines WL2 to WLn, 0V is applied to selected bit line BLm, and a positive voltage is applied to unselected bit lines BL1 to BLm-1.
At the verify timing Y2, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; the selected bit line BLm is discharged for a first time, and then the voltage of the discharged bit line is compared with a first determination voltage, where the voltage of the selected bit line is lower than the first determination voltage, and the verification fails.
The number Q of successfully stored memory cells is less than the number Q of successfully stored memory cells at program timing B3A first threshold num1, applying a programming voltage V to the selected word line WL1pgm+Dvpgm1+Dvpgm1＝Vpgm+2Dvpgm1A pass voltage is applied to unselected word lines WL 2-WLn, 0V is applied to selected bit line BLm, and a positive voltage is applied to unselected bit lines BL 1-BLm-1
At the verify timing Y3, a verify voltage is applied to the selected word line WL1 in the memory, the selected bit line BLm is precharged to the precharge voltage, and a pass voltage is applied to the unselected word lines WL2 to WLn; the selected bit line BLm is discharged for a first time, and then the voltage of the discharged bit line is compared with a first determination voltage, where the voltage of the selected bit line is lower than the first determination voltage, and the verification fails.
According to the above program and verify method, up to the program timing B5, the magnitude of the program voltage applied to the selected word line WL1 is Vpgm+2Dvpgm1+Dvpgm2+Dvpgm3Then, the voltages of all the bit lines after discharging are greater than the first determination voltage, and the verification is successful. At this time, the magnitude V of the programming voltagepgm+2Dvpgm1+Dvpgm2+Dvpgm3Greater than the programmed threshold.
That is, when the number of memory cells with successful data storage is Q < num1, the amplification of the program voltage per verify failure is Dvpgm1When num1 is not more than Q < num2, the amplification of the programming voltage of each verification failure is Dvpgm2When Q is not less than num2, the amplification of the programming voltage is Dvpgm3. In this embodiment, the program voltage is amplified by DvpgmThe variation is adjusted in three stages. It is understood that num1, num2, Dvpgm1、Dvpgm2And Dvpgm3The values of (A) can be varied as desired, e.g. num1, num2, Dvpgm1、Dvpgm2And Dvpgm3The value of (c) may vary depending on the programmed threshold. It is understood that the increase change of the programming voltage can be divided into two stages or more than three stages, which is not limited in the present invention and falls within the protection scope of the present invention without departing from the concept of the present invention.
As the magnitude of the program voltage increases, the program voltage gradually approaches the program threshold. Because the amplitude of the programming voltage is increased, the number Q of the memory cells with successful data storage is increased, and the increase Dvpgm of the programming voltage is reduced, after the amplitude of the programming voltage is close to the programming threshold, the amplitude of the programming voltage is increased again if verification fails, and even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold so much, the tunnel oxide film 1114 of the memory cell 111 is not affected, the transient programming effect is reduced, the service life of the memory cell of the memory is prolonged, and the successful rate of the programming is ensured.
Example B
Referring to fig. 6, fig. 6 is a block diagram of a programming system 12 of a memory according to the present invention. The programming system 12 of the memory can execute the programming method of the memory provided by any embodiment of the invention. The programming system 12 of the memory comprises:
a program module 121 for applying a program voltage to the memory cell to store data when programming timing B1;
a verifying module 122, configured to apply a verifying voltage to the memory cell when verifying the timing Y1;
if the verification fails, after the program timing B1, the program module 121 re-applies at least two program voltages with increased amplitudes to the memory cells, and the verification module 122 performs the verification again, with the increased amplitudes D of the program voltagesvpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
Through the programming system 12 of the memory, after the verification fails, the programming module 121 applies the programming voltage to the memory cells again, the verification module 122 verifies again, the programming voltage gradually increases along with the increase of the verification failure times, the number Q of the memory cells with successful data storage increases, the amplitude Dvpgm of the programming voltage at each time is inversely proportional to the amplitude of the programming voltage, the closer the programming voltage is to the programming threshold, the smaller the amplitude Dvpgm of the programming voltage after each verification failure is, even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold a lot, so that the tunneling oxide film 1114 of the memory cell 111 is not affected, the transient programming effect is reduced, and the service life of the memory cells of the memory is prolonged.
It is understood that the contents of embodiment a and embodiment B of the present invention can be supplemented and described.
Compared with the prior art, the invention provides the programming method and the system of the memory, after the verification fails, at least two programming voltages with amplification are applied to the memory cells again to perform the verification again, the amplification of the programming voltages is reduced along with the gradual increase of the number Q of the memory cells with successful data storage, the programming voltages are closer to the programming threshold, the amplitude of the programming voltage increase after each verification failure is smaller, even if the amplitude of the programming voltage exceeds the programming threshold, the amplitude of the programming voltage does not exceed the programming threshold a lot, so that the influence on a tunneling oxide film of the memory cells is avoided, the transient programming effect is reduced, the service life of the memory cells of the memory is prolonged, and the programming speed is ensured and the programming efficiency is improved because the programming voltage is large at first.
It should be noted that, in all the above embodiments, the included units and modules are only divided according to functional logic, but are not limited to the above division as long as the corresponding functions can be implemented; in addition, specific names of the functional units are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present invention.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method of programming a memory, comprising the steps of:
a program timing B1 is a timing for applying a program voltage to a memory cell to store data;
applying a verify voltage to the memory cell at a verify timing Y1;
if the verification fails, at least two programming voltages with amplification are applied to the memory cell again after the programming timing B1 to perform verification again, wherein the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
2. The method of programming a memory of claim 1, wherein: the magnitude of the program voltage when the program voltage is applied to the memory cell at the program timing B1 is VpgmWhen the programming voltage is applied to the memory cell for the nth time, the amplitude of the programming voltage is Vpgm+(n-1)DvpgmWhere n is a positive integer and n is equal to or greater than 1, D is the number of successfully stored data cells Q that increases in stagesvpgmAnd decreases.
3. The method of programming a memory of claim 2, wherein: amplification of the programming voltage DvpgmFurther comprising a third amplification Dvpgm3When Q is less than num1, the amplification of the program voltage for each verification failure is a first amplification Dvpgm1When num1 is not more than Q < num2, the amplification of the programming voltage of each verification failure is a second amplification Dvpgm2When Q is not less than num2, the amplification of the programming voltage is the third amplification Dvpgm3Num1 is a first threshold for the number of memory cells in which data is successfully stored, and num2 is a second threshold for the number of memory cells in which data is successfully stored.
4. The method of programming a memory of claim 1, wherein: the number of the memory cells needing to be stored with data is P, num1 accounts for 40% -60% of P, and num2 accounts for 70% -90% of P.
5. The method of programming a memory of claim 1, wherein: at the program timing B1, a program voltage is applied to the selected word line, a pass voltage is applied to the unselected word line, 0V is applied to the selected bit line, and a positive voltage is applied to the unselected bit line.
6. The method of programming a memory of claim 1, wherein: the range of the programming voltage is 12V to 16V.
7. The method of programming a memory of claim 1, wherein: at the verification timing Y1, a verification voltage is applied to the selected word line, the selected bit line is precharged to the precharge voltage, and a pass voltage is applied to the unselected word line; and then, discharging the selected bit line for the first time, comparing the voltage of the discharged bit line with a first judgment voltage, if the voltage of the discharged bit line is higher than the first judgment voltage, indicating that the verification is successful and the operation can be finished, and otherwise, indicating that the verification fails, storing data into the memory again and verifying.
8. The method of programming a memory of claim 1, wherein: the range of the verification voltage is 0V-1V.
9. The method of programming a memory of claim 7, wherein: the precharge voltage ranges from 1v to 1.2 v.
10. A programming system for a memory, the programming system comprising:
a program module for applying a program voltage to the memory cell to store data when programming timing B1;
the verifying module is used for applying verifying voltage to the storage unit when verifying the time sequence Y1;
if the verification fails, after the program timing sequence B1, the program module re-applies at least two programming voltages with amplification to the memory cell, the verification module performs the verification again, and the amplification D of the programming voltagevpgmAt least comprising a first amplification Dvpgm1And a second amplification Dvpgm2，Dvpgm1＞Dvpgm2The larger the number Q of memory cells in which data is successfully stored, the larger the increase D of the programming voltagevpgmThe smaller.
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Application publication date: 20200225 |