CN110837149B - Visible light communication-oriented integrated controllable switch type planar waveguide splitter and preparation method thereof - Google Patents
Visible light communication-oriented integrated controllable switch type planar waveguide splitter and preparation method thereof Download PDFInfo
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- CN110837149B CN110837149B CN201911132410.0A CN201911132410A CN110837149B CN 110837149 B CN110837149 B CN 110837149B CN 201911132410 A CN201911132410 A CN 201911132410A CN 110837149 B CN110837149 B CN 110837149B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/3502—Optical coupling means having switching means involving direct waveguide displacement, e.g. cantilever type waveguide displacement involving waveguide bending, or displacing an interposed waveguide between stationary waveguides
- G02B6/3508—Lateral or transverse displacement of the whole waveguides, e.g. by varying the distance between opposed waveguide ends, or by mutual lateral displacement of opposed waveguide ends
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/3564—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details
- G02B6/3584—Mechanical details of the actuation mechanism associated with the moving element or mounting mechanism details constructional details of an associated actuator having a MEMS construction, i.e. constructed using semiconductor technology such as etching
Abstract
The invention discloses an integrated controllable switch type planar waveguide branching unit facing visible light communication and a preparation method thereof, wherein a carrier is a silicon substrate nitride wafer, the silicon substrate nitride wafer comprises a silicon substrate layer and a nitride layer positioned above the silicon substrate layer, and a micro LED device serving as a light source, an MEMS electrostatic comb tooth driver with a waveguide, a planar waveguide branching unit and a nickel/gold electrode for electrifying are arranged on the nitride layer. The invention has small volume and high integration, can realize the cutting off and the communication between the free control plane waveguide branching unit and the light source, can be applied to an optical communication network, and improves the performance indexes of the visible light communication technology in various aspects such as information transmission rate, information processing speed, terminal device integration level and the like.
Description
Technical Field
The invention relates to a planar waveguide splitter, in particular to an integrated controllable switch type planar waveguide splitter facing visible light communication, and belongs to the technical field of information materials and devices.
Background
The visible light communication is an optical communication technology developed based on an LED device, and the communication function is realized by using the high-speed response characteristics of the output optical power and the driving current of the visible light communication and taking the visible light as an information carrier. The visible light communication technology is green and low-carbon, can realize nearly zero-energy-consumption communication, can effectively avoid the defects of leakage of radio communication electromagnetic signals and the like, and quickly constructs an anti-interference and anti-interception safety information space.
The optical splitter is one of core devices in the optical communication technology, and the coupling, branching and distribution of optical signals are realized by the optical splitter, wherein the planar waveguide type optical splitter has excellent optical performance, high stability and high reliability, can be efficiently integrated in a photonic chip for processing the optical signals, and is used for performing functions of power distribution and the like on the optical signals.
The conventional comb drivers are widely applied in the field of MEMS, including optical switches, micro-relays, resonators, micro-tweezers, micro-motors, micro-mirrors, shutters, and the like. The traditional comb teeth are generally processed by an MEMS method, the size of the comb teeth is in a range from millimeter to micron, the comb teeth can be regarded as a plane structure, the comb teeth usually comprise a pair of comb teeth structures, one comb tooth structure is fixed, the other comb tooth structure is connected with a spring to ensure that the two comb teeth structures are not in contact and can move in a certain range, the comb teeth are powered by alternating current plus direct current bias current, the output frequency is high, but the output force and the power are low.
The invention provides an integrated controllable switch type planar waveguide branching unit for visible light communication, which utilizes a micro LED device to generate a light source signal, utilizes a movable waveguide connected with an MEMS electrostatic comb driver to realize the disconnection and the communication of the branching unit and a light source, and is applied to the field of optical communication.
Disclosure of Invention
The invention aims to provide an integrated controllable switch type planar waveguide branching unit for visible light communication and a preparation method thereof, which can realize the cutting off and communication between the branching unit and a light source.
The purpose of the invention is realized as follows: the integrated controllable switch type planar waveguide splitter facing to visible light communication is characterized in that a silicon substrate nitride wafer is used as a carrier of the planar waveguide splitter, the planar waveguide splitter comprises a silicon substrate layer, a top nitride layer, a micro LED device arranged in the top nitride layer, an MEMS electrostatic comb tooth driver with a waveguide and a planar waveguide splitter, the micro LED device and the MEMS electrostatic comb tooth driver with the waveguide are both provided with a positive electrode and a negative electrode, the silicon substrate layer is partially hollowed to form a suspended part, the suspended part is the MEMS electrostatic comb tooth driver with the waveguide, the waveguide comprises an input waveguide on one side, a movable waveguide in the middle and an output waveguide on the other side, one end of the input waveguide is provided with the micro LED device serving as a light source, and the other end of the output waveguide is provided with the planar waveguide splitter.
As a further limitation of the invention, the positive and negative electrodes are both nickel/gold electrodes.
As a further limitation of the present invention, the light emitted from the micro LED device is transmitted through the planar waveguide splitter while the input waveguide, the movable waveguide and the output waveguide are communicated.
A preparation method of a planar waveguide splitter comprises the following steps:
performing electron beam lithography on the upper surface of the top layer nitride of a silicon substrate nitride wafer, defining a graph structure of an MEMS (micro-electromechanical systems) electrostatic comb driver with a waveguide, a planar waveguide splitter and a micro LED (light-emitting diode) device, and exposing an N-type nitride material region in a nitride layer for preparing a negative electrode by adopting a III-V material reactive ion etching technology;
performing optical photoetching on the upper surface of the top layer nitride of the silicon substrate nitride wafer, defining the graphic structures of the positive and negative electrodes of the micro LED device and the MEMS electrostatic comb driver, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode and a negative electrode of the micro LED device and the MEMS electrostatic comb actuator;
performing optical photoetching on the lower surface of a silicon substrate nitride wafer, namely the silicon substrate surface, defining a graphic structure of a suspension area of the silicon substrate layer, stripping the MEMS electrostatic comb tooth driver and the silicon substrate below the movable waveguide area from the back by adopting a deep silicon reactive ion etching technology to form a suspended nitride film, and further releasing the MEMS electrostatic comb tooth driver with the waveguide;
and (5) performing reactive ion etching on the lower surface of the silicon substrate nitride wafer, namely the silicon substrate surface, to remove the MEMS electrostatic comb tooth driver and the nitride film remained below the movable waveguide structure, and completely releasing the MEMS electrostatic comb tooth driver with the waveguide to make the MEMS electrostatic comb tooth driver movable and adjustable.
As a further limitation of the invention, the silicon substrate nitride wafer comprises a silicon substrate layer and a top nitride layer, wherein the top nitride layer is provided with a micro LED device serving as a light source, a MEMS electrostatic comb drive with a waveguide, a planar waveguide shunt and a nickel/gold electrode for electrifying.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
as one of core devices in the optical communication technology, the coupling, branching and distribution of optical signals are realized by optical splitters, wherein the planar waveguide type optical splitter has excellent optical performance, high stability and high reliability and can be efficiently integrated in a photonic chip for processing the optical signals; the invention combines the MEMS technology, utilizes the electrostatic comb tooth driver with the waveguide, and can realize the free control of the on-off state of the optical splitter; the shunt and the light source are connected by a movable waveguide, and the position of the movable waveguide is controlled by the MEMS electrostatic comb drive; when voltage is applied to the driver, the splitter is communicated with the light source and is in an open state, and the physical contact of the waveguide tip enables light to be transmitted from the input waveguide at one end of the micro LED device to the output waveguide at one end of the planar waveguide splitter through the movable waveguide; when no voltage is applied to the driver, the movable waveguide is retracted, the movable waveguide generates air gap offset with the input and output waveguides, and the splitter and the light source are cut off and in a closed state.
At present, the mainstream planar waveguide type optical splitter is mainly based on the optical communication technology that a quartz substrate faces a near-infrared band of 1.55 microns, and is a passive optical signal processing device, an optical signal needs to be generated by an external light source and is coupled into the splitter through an optical fiber system, and the volume and the cost of the whole optical communication system are greatly increased; meanwhile, due to the limitation of the forbidden bandwidth of the silicon-based material, the band of the optical signal which can be processed by the silicon-based material is limited above the infrared band, so that the visible optical signal with smaller wavelength and larger signal bandwidth can not be processed; the invention integrates the active micro LED light source, can generate visible light signals independently, can greatly reduce the volume and the cost of the whole optical communication system compared with a passive optical signal processing device, and can process the visible light signals with smaller wavelength and larger signal bandwidth.
The invention uses silicon substrate nitride wafer as carrier, synchronously prepares active micro LED device, MEMS electrostatic comb driver with waveguide and plane waveguide shunt in top nitride layer in high integration mode; the waveguide and the planar waveguide splitter are used for transmitting and separating optical signals emitted by the active micro LED device; the MEMS electrostatic comb driver with the waveguide is used for controlling the switching state of the optical splitter; the invention can realize the cutting off and the communication between the freely controlled branching unit and the light source, can be applied to the optical wave communication network, and improves the performance indexes of the visible light communication technology in various aspects such as information transmission rate, information processing speed, terminal device integration level and the like.
Drawings
Fig. 1 is a schematic top view of an integrated controllable switch-type planar waveguide splitter for visible light communication.
Fig. 2 is a process flow of manufacturing an integrated controllable switch type planar waveguide splitter for visible light communication.
The device comprises a micro LED device 1, an MEMS electrostatic comb tooth driver 2, a planar waveguide splitter 3, an input waveguide 4, a movable waveguide 5, an output waveguide 6, a positive electrode 7 and a negative electrode 8.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
as shown in figure 1, the integrated controllable switch type planar waveguide branching unit facing visible light communication, the planar waveguide branching unit 3 uses a silicon substrate nitride wafer as a carrier, and comprises a silicon substrate layer, a top nitride layer, a micro LED device 1 arranged in the top nitride layer, a MEMS electrostatic comb tooth driver 2 with a waveguide and a planar waveguide branching unit 3, wherein the micro LED device 1 and the MEMS electrostatic comb tooth driver 2 with a waveguide both have a positive electrode 7 and a negative electrode 8, the positive electrode 7 and the negative electrode 8 are both nickel/gold electrodes, the silicon substrate layer is partially hollowed out to form a hanging part, the hanging part is the MEMS electrostatic comb tooth driver 2 with a waveguide, the waveguide comprises an input waveguide 4 at one side, a movable waveguide 5 in the middle and an output waveguide 6 at the other side, one end of the input waveguide 4 is provided with the micro LED device 1 as a light source, the other end of the output waveguide 6 is provided with the planar waveguide branching unit 3, the light emitted from the micro LED device 1 is transmitted through the planar waveguide splitter 3 while the input waveguide 4, the movable waveguide 5, and the output waveguide 6 are communicated.
MEMS static broach driver 2 can be regarded as a planar structure, including a pair of broach structure, a broach structure is fixed, and another broach structure coupling spring guarantees that two broach structures contactless can move at the certain limit, uses alternating current plus direct current bias current energy supply.
The method takes the electron beam photoresist layer as a mask, etches to the N-type nitride layer through the III-V group reactive ions, and etches for 10 minutes at the etching speed of 100 nanometers/minute by using the high etching selection ratio of the electron beam photoresist layer and the top nitride layer in the etching process to obtain the etching depth of 1 micrometer on the top nitride layer and etch to the N-type nitride layer.
In a specific application scene, an active micro LED device 1 is used for generating a visible light signal, when voltage is applied to an MEMS electrostatic comb tooth driver 2, a movable waveguide 5 extends forwards to close an air gap, and light can be transmitted to an output waveguide 6 at one end of a planar waveguide splitter 3 from an input waveguide 4 at one end of the micro LED device 1 through the movable waveguide 5 due to physical contact of the tip end of the waveguide, so that the transmission of the light signal is realized, and then the light signal is coupled, branched and distributed through the planar waveguide splitter 3.
As an optimized structure of the invention: the light signal transmitting end of the integrated controllable switch type planar waveguide branching unit 3 facing visible light communication is an active micro LED device 1, and light signals are transmitted in the light waveguide along with the closing of the air gap, so that the branching unit 3 and a light source are cut off and connected.
The invention relates to an integrated controllable switch type planar waveguide splitter 3 for visible light communication, which has the application range, such as:
visible light signals generated by the micro LED device 1 are regulated and controlled by the movable waveguide 5 controlled by the electrostatic comb driver 2, and the planar waveguide type branching unit 3 is used for coupling, branching and distributing the optical signals, so that the micro LED device can be used as a core device in high-speed visible light communication and photon calculation to distribute or combine the power of the optical signals. The switch state of the branching unit 3 can be freely regulated and controlled at high speed by the movable waveguide 5 controlled by the electrostatic comb tooth driver 2, so that the invention is also beneficial to improving the performance indexes of the visible light communication technology in various aspects such as information transmission rate, information processing speed, terminal device integration level and the like.
As shown in fig. 2, an integrated controllable switch type planar waveguide splitter 3 for visible light communication and a preparation method thereof include the following specific steps:
performing electron beam lithography on the upper surface of a top layer nitride of a silicon substrate nitride wafer, defining a graph structure of an MEMS electrostatic comb tooth driver 2 with a waveguide, a planar waveguide splitter 3 and a micro LED device 1, and exposing an N-type nitride material area in a nitride layer for preparing a negative electrode 8 by adopting a III-V material reactive ion etching technology;
performing optical photoetching on the upper surface of the top layer nitride of the silicon substrate nitride wafer, defining the pattern structures of a positive electrode 7 and a negative electrode 8 of the micro LED device 1 and the MEMS electrostatic comb tooth driver 2, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode 7 and a negative electrode 8 of the micro LED device 1 and the MEMS electrostatic comb tooth driver 2;
performing optical photoetching on the lower surface of a silicon substrate nitride wafer, namely the silicon substrate surface, defining a pattern structure of a suspension area of the silicon substrate layer, stripping the silicon substrate below the MEMS electrostatic comb tooth driver 2 and the movable waveguide 5 area from the back by adopting a deep silicon reactive ion etching technology to form a suspended nitride film, and further releasing the MEMS electrostatic comb tooth driver 2 with the waveguide;
and (5) performing reactive ion etching on the lower surface of the silicon substrate nitride wafer, namely the silicon substrate surface, to remove the residual nitride film on the lower part of the MEMS electrostatic comb drive 2 and the movable waveguide 5 structure, and completely releasing the MEMS electrostatic comb drive 2 with the waveguide to enable the MEMS electrostatic comb drive to be movable and adjustable.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the modifications or substitutions within the technical scope of the present invention are included in the scope of the present invention, and therefore, the scope of the present invention should be subject to the protection scope of the claims.
Claims (5)
1. The integrated controllable switch type planar waveguide splitter facing to visible light communication is characterized in that a silicon substrate nitride wafer is used as a carrier of the planar waveguide splitter, the planar waveguide splitter comprises a silicon substrate layer, a top nitride layer, a micro LED device arranged in the top nitride layer, an MEMS electrostatic comb tooth driver with a waveguide and a planar waveguide splitter, the micro LED device and the MEMS electrostatic comb tooth driver with the waveguide are both provided with a positive electrode and a negative electrode, the silicon substrate layer is partially hollowed to form a suspended part, the suspended part is the MEMS electrostatic comb tooth driver with the waveguide, the waveguide comprises an input waveguide on one side, a movable waveguide in the middle and an output waveguide on the other side, one end of the input waveguide is provided with the micro LED device serving as a light source, and the other end of the output waveguide is provided with the planar waveguide splitter.
2. The visible-light-communication-oriented integrated controllable switched-mode planar waveguide splitter of claim 1, wherein the positive and negative electrodes are both nickel/gold electrodes.
3. The visible light communication-oriented integrated controllable switch-type planar waveguide splitter of claim 1, wherein light emitted from the micro LED devices is transmitted through the planar waveguide splitter when the input waveguide, the movable waveguide and the output waveguide are in communication.
4. A method for preparing a planar waveguide splitter according to any one of claims 1 to 3, comprising the steps of:
performing electron beam lithography on the upper surface of the top layer nitride of a silicon substrate nitride wafer, defining a graph structure of an MEMS (micro-electromechanical systems) electrostatic comb driver with a waveguide, a planar waveguide splitter and a micro LED (light-emitting diode) device, and exposing an N-type nitride material region in a nitride layer for preparing a negative electrode by adopting a III-V material reactive ion etching technology;
performing optical photoetching on the upper surface of the top layer nitride of the silicon substrate nitride wafer, defining the graphic structures of the positive and negative electrodes of the micro LED device and the MEMS electrostatic comb driver, and depositing a nickel/gold composite metal layer by adopting an electron beam evaporation technology;
stripping a nickel/gold composite metal layer evaporated on the surface of the photoresist in an ultrasonic cleaning environment by using an organic reagent acetone to obtain a positive electrode and a negative electrode of the micro LED device and the MEMS electrostatic comb actuator;
performing optical photoetching on the lower surface of a silicon substrate nitride wafer, namely the silicon substrate surface, defining a graphic structure of a suspension area of the silicon substrate layer, stripping the MEMS electrostatic comb tooth driver and the silicon substrate below the movable waveguide area from the back by adopting a deep silicon reactive ion etching technology to form a suspended nitride film, and further releasing the MEMS electrostatic comb tooth driver with the waveguide;
and (5) performing reactive ion etching on the lower surface of the silicon substrate nitride wafer, namely the silicon substrate surface, to remove the MEMS electrostatic comb tooth driver and the nitride film remained below the movable waveguide structure, and completely releasing the MEMS electrostatic comb tooth driver with the waveguide to make the MEMS electrostatic comb tooth driver movable and adjustable.
5. The preparation method according to claim 4, wherein the silicon substrate nitride wafer comprises a silicon substrate layer and a top nitride layer, and the top nitride layer is provided with a micro LED device as a light source, a MEMS electrostatic comb driver with a waveguide, a planar waveguide splitter and a nickel/gold electrode for energizing.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6363183B1 (en) * | 2000-01-04 | 2002-03-26 | Seungug Koh | Reconfigurable and scalable intergrated optic waveguide add/drop multiplexing element using micro-opto-electro-mechanical systems and methods of fabricating thereof |
| CN106537200A (en) * | 2014-03-07 | 2017-03-22 | 瓦里奥管理有限合伙 | Mirror based microelectromechanical systems and methods |
| CN107329209A (en) * | 2017-08-18 | 2017-11-07 | 中国科学院半导体研究所 | M × N multicast photoswitches |
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| US6801683B2 (en) * | 2002-07-15 | 2004-10-05 | Sumitomo Electric Industries, Ltd. | Optical module, light divider/insertor and light transmission device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6363183B1 (en) * | 2000-01-04 | 2002-03-26 | Seungug Koh | Reconfigurable and scalable intergrated optic waveguide add/drop multiplexing element using micro-opto-electro-mechanical systems and methods of fabricating thereof |
| CN106537200A (en) * | 2014-03-07 | 2017-03-22 | 瓦里奥管理有限合伙 | Mirror based microelectromechanical systems and methods |
| CN107329209A (en) * | 2017-08-18 | 2017-11-07 | 中国科学院半导体研究所 | M × N multicast photoswitches |
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