CN110836866A - Spectral analysis system and spectral analysis apparatus - Google Patents

Spectral analysis system and spectral analysis apparatus Download PDF

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Publication number
CN110836866A
CN110836866A CN201911071373.7A CN201911071373A CN110836866A CN 110836866 A CN110836866 A CN 110836866A CN 201911071373 A CN201911071373 A CN 201911071373A CN 110836866 A CN110836866 A CN 110836866A
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CN
China
Prior art keywords
spectral analysis
semiconductor laser
target object
chip
laser chip
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CN201911071373.7A
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Chinese (zh)
Inventor
杨晓杰
杨国文
李靖
赵卫东
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Dugen Laser Technology Suzhou Co Ltd
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Dugen Laser Technology Suzhou Co Ltd
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Priority to CN201911071373.7A priority Critical patent/CN110836866A/en
Publication of CN110836866A publication Critical patent/CN110836866A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/39Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01Arrangements or apparatus for facilitating the optical investigation

Abstract

The invention relates to the technical field of spectral analysis, in particular to a spectral analysis system and a spectral analysis device, wherein the system is arranged on a preset circuit board and comprises: a laser light source module having a semiconductor laser chip for emitting a laser beam to a target object; the semiconductor laser chip is a semiconductor laser array; the detection assembly is used for receiving the light beam reflected or transmitted after the laser beam irradiates the target object, converting the received light beam into a photo-generated current or voltage signal and sending the photo-generated current or voltage signal to the spectral analysis processor; and the spectral analysis processor analyzes the target object based on the photo-generated current or voltage signal. The laser light source assembly, the detection assembly and the spectral analysis processor are integrated into one system, so that the volume of the spectral analysis system is reduced; the semiconductor laser chip is used as a light source, has the functions of ultrashort pulse laser emission and detection, can analyze the chemical components of a target object and realize imaging, and accurately positions the component information of a certain position.

Description

Spectral analysis system and spectral analysis apparatus
Technical Field
The invention relates to the technical field of spectral analysis, in particular to a spectral analysis system and spectral analysis equipment.
Background
Near-infrared/short-wave infrared radiation with wavelength of 0.7-3.0 μm, which is mainly reflected by natural environment, active radiation from high-temperature object, artificial short-wave infrared laser source, O-H, C-H and N-H chemical bonds of water, protein, oil, fat, starch, lactose and collagen in food, and CH4,NH4,CO,NO,H2S and other characteristic absorption spectrum regions of industrial gas molecules. The method comprises the steps of detecting components or contents in an object by adopting a spectral analysis method, and identifying a substance and determining the chemical composition and relative content of the substance by the spectral analysis according to the spectrum of the substance.
Among them, the near/short wave infrared detector is combined with spectral analysis, and has been widely used in the fields of infrared imaging, military reconnaissance, satellite remote sensing, optical fiber communication, crop and food detection, industrial gas monitoring, intelligent building (building) and the like.
Disclosure of Invention
In view of this, embodiments of the present invention provide a spectrum analysis system and a spectrum analysis apparatus to solve the problem of analyzing the components of an object.
According to a first aspect, an embodiment of the present invention provides a spectrum analysis system, where the spectrum analysis system is disposed on a preset circuit board, and the system includes:
a laser light source module having a semiconductor laser chip for emitting a laser beam to a target object; the semiconductor laser chip is a semiconductor laser array;
the detection assembly is used for receiving the light beam reflected or transmitted after the laser beam irradiates the target object, converting the received light beam into a photo-generated current or voltage signal and sending the photo-generated current or voltage signal to the spectral analysis processor;
the spectral analysis processor is connected with the detection assembly; wherein the spectral analysis component analyzes the target object based on the photo-generated current or voltage signal.
According to the spectral analysis system provided by the embodiment of the invention, the laser light source assembly, the detection assembly and the spectral analysis processor are integrated into one system, so that the size of the spectral analysis system can be reduced, and the cost is saved; meanwhile, the semiconductor laser chip is used as a light source of the spectral analysis system, and the semiconductor laser chip is a semiconductor laser array, namely the spectral analysis system is an array laser light source, so that the spectral analysis system has a wider detection range and can realize accurate analysis of a target object.
With reference to the first aspect, in a first embodiment of the first aspect, the semiconductor laser chip is a GaAs-based semiconductor laser chip, an InP-based semiconductor laser chip, or a GaSb-based semiconductor laser chip.
With reference to the first embodiment of the first aspect, in a second embodiment of the first aspect, the semiconductor laser chip is a vertical cavity surface emitting laser array.
With reference to the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, in a third embodiment of the first aspect, the laser light source assembly includes:
the semiconductor laser chip and the detection assembly are movably arranged on the corresponding translation guide mechanism;
and the translation driving mechanism is respectively connected with the semiconductor laser chip and the detection assembly and is used for driving the semiconductor laser chip and the detection assembly to move on the translation guiding mechanism.
With reference to the first aspect, or the first embodiment of the first aspect, or the second embodiment of the first aspect, in a fourth embodiment of the first aspect, the laser light source assembly includes:
the detection assemblies are rotatably arranged on the corresponding rotary guide mechanisms;
the angle measuring device is used for measuring the light beam rotation angle corresponding to the semiconductor laser chip;
and the rotation driving mechanism is connected with the angle measuring device and used for driving the detection assembly to rotate based on the measuring result of the angle measuring device.
With reference to the fourth embodiment of the first aspect, in the fifth embodiment of the first aspect, the laser light source assembly includes:
a laser optical modulator; the laser optical modulator is arranged on an optical path between the semiconductor laser chip and the target object, and is used for reflecting the laser beam to the surface of the target object and adjusting the irradiation range of the laser beam on the surface of the target object.
According to the spectral analysis system provided by the embodiment of the invention, the irradiation range of the laser beam on the surface of the target object is adjusted by adopting the laser optical modulator, the detection range of the laser beam can be expanded by adjusting the irradiation range, and the accuracy of an analysis result is improved.
With reference to the fifth embodiment of the first aspect, in the sixth embodiment of the first aspect, the laser optical modulator is a micro-opto-electro-mechanical system having a mirror.
With reference to the first aspect, in a seventh implementation manner of the first aspect, the detection assembly includes:
the detector chip is used for detecting the light beam reflected or transmitted by the target object and converting the light beam into a photo-generated current or voltage signal;
the input end of the reading circuit is connected with the detector chip, and the output end of the reading circuit is connected with the spectral analysis processor; the readout circuit is used for providing a driving voltage for the detector chip and outputting a photo-generated current or voltage signal of the detector chip to the spectral analysis processor.
The spectral analysis system provided by the embodiment of the invention judges the substance (molecule) components contained in the target object through the information of the wavelength and the intensity of the absorption signal of the target object, so as to realize qualitative and approximately quantitative analysis on the target object.
With reference to the seventh implementation manner of the first aspect, in the eighth implementation manner of the first aspect, the detector chip is a focal plane array detector chip.
With reference to the seventh implementation manner of the first aspect, in the ninth implementation manner of the first aspect, the detection assembly further comprises an optical modulator; the optical modulator is used for converging the light beam reflected or transmitted by the target object on a photosensitive area of the detector chip.
According to the spectral analysis system provided by the embodiment of the invention, the reflected light beams are converged by adopting the optical modulator, so that the analysis accuracy is improved.
With reference to the ninth implementation manner of the first aspect, in the tenth implementation manner of the first aspect, the detection assembly is a convex lens array.
With reference to the first aspect or any one of the first to tenth embodiments of the first aspect, in an eleventh embodiment of the first aspect, the laser beam is a pulsed beam, a pulse width of the pulsed beam is 10ps to 100ns, a frequency is 1KHz to 100GHz, and a duty cycle is 0.0001 to 0.1.
According to a second aspect, embodiments of the present invention also provide a spectroscopic analysis apparatus comprising:
a chamber in which the spectroscopic analysis system according to the first aspect of the present invention, or any embodiment thereof, is disposed;
the light outlet window is formed in the cavity;
and/or the presence of a gas in the gas,
the surface of the cavity is also provided with a groove, and the groove is used for forming a cavity for placing a target object; and the laser beam emitted by the semiconductor laser chip is transmitted by the target object and then received by the detection component.
According to the spectral analysis equipment provided by the embodiment of the invention, the spectral analysis system is integrated in one cavity, so that the size of the spectral analysis equipment is reduced, and the analysis accuracy can be ensured, thereby realizing one-key operation of spectral analysis; the surface of the cavity is provided with the groove for placing a target object, and the laser beam emitted by the semiconductor laser chip is transmitted by the target object and then received by the detection assembly, so that the spectral analysis equipment can be suitable for the target object with poor reflectivity, and the application range of the spectral analysis equipment is expanded.
With reference to the second aspect, in a first embodiment of the second aspect, the apparatus further includes:
and the display component is connected with the spectral analysis system and is used for displaying the result of the spectral analysis.
According to the spectral analysis equipment provided by the embodiment of the invention, the result of the spectral analysis can be displayed on the spectral analysis equipment through the display component, so that the visual output of the analysis result is realized, and the readability of the analysis result is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a spectral analysis system according to an embodiment of the present invention;
fig. 2 is a block diagram of a laser driving circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a further spectral analysis system according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a laser optical modulator according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a probe assembly according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a sensing circuit according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of the structure of a spectroscopic analysis apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the structure of a spectroscopic analysis apparatus according to an embodiment of the present invention;
reference numerals:
10-a laser light source assembly; 11-a semiconductor laser chip; 121-piezoelectric device; 122-a mirror; 123-torsion beam; 124-a cross beam; 13-a translational guide mechanism; 14-a translation drive mechanism;
20-a detection component; 21-a detector chip; 22-a readout circuit;
30-a spectral analysis processor; 40-a target object; 50-a chamber;
100-a spectroscopic analysis device; 101-presetting a circuit board; 102-a light exit window; 103-display component.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a spectral analysis system which is used for qualitatively and approximately quantitatively analyzing the components of substances (molecules) contained in a target object. The spectral analysis system is arranged on a preset circuit board, namely the spectral analysis system is arranged on the preset circuit board. Specifically, as shown in fig. 1, the spectral analysis system includes a laser light source assembly 10, a detection assembly 20, and a spectral analysis processor 30.
The laser light source module 10 has a semiconductor laser chip 11 for emitting a laser beam to the target object 40, and the semiconductor laser chip 11 is a semiconductor laser array, and may also be understood as an array light source. For example, whether the target object contains the component a is detected, and the wavelength corresponding to the characteristic peak absorbed by the component a is B, then the wavelength of the laser light emitted by the semiconductor laser chip 11 can be set to be B. Taking the class of C-H which is one time frequency doubling of protein as an example, since the wavelength corresponding to the characteristic peak absorbed by the C-H is 1734nm, the wavelength of the laser light emitted by the semiconductor laser chip 11 is set to 1734 nm. Alternatively, the wavelength of the laser light emitted from the semiconductor laser chip 11 may be set to 600 to 20 μm to cover the near-infrared band and the medium and long-wavelength infrared bands. Alternatively, still further, a micro electro mechanical system is provided in the laser light source module 10 to modulate the wavelength of laser light emitted from the semiconductor laser chip 11, and the like.
The semiconductor laser chip 11 may be a GaAs-based semiconductor laser chip, an InP-based semiconductor laser chip, or a GaSb-based semiconductor laser chip, and the specific material and structure of the semiconductor laser chip 11 are not limited. Optionally, the semiconductor laser chip 11 is a Vertical Cavity Surface Emitting Laser (VCSEL) array, and has a wavelength range of 600nm-20 μm, covering near infrared bands and medium and long wave infrared bands. An array beam emitted by a Vertical Cavity Surface Emitting Laser (VCSEL) array has a certain divergence angle, and a micro lens can be arranged corresponding to an emergent beam to shape the emergent beam into parallel light for detection. The output wavelength can be selected, such as 850nm, 940nm, 1550nm, 1310nm, 4 μm or 10 μm. A Vertical Cavity Surface Emitting Laser (VCSEL) array is used as a laser source, and a collimation two-dimensional light beam array works in a nanosecond pulse mode, wherein the laser source emits a pulse light beam, the pulse width of the pulse light beam is 10ps-100ns, the frequency is 1KHz-100GHz, and the duty ratio is 0.0001-0.1. And then, according to the difference between the characteristic absorption peak and the Time of flight (TOF) of the chemical bond, not only can the chemical composition information of the surface of the target object be detected, but also the 3D morphology information containing the distance and the depth can be measured.
The laser light source assembly 10 further includes a laser driving circuit (not shown in the figure) for driving the semiconductor laser chip 11 to operate. The laser driving circuit provides working voltage and time sequence signals for the semiconductor laser chip 11 to generate nano-scale or even picosecond-scale short pulse laser signals.
As an alternative embodiment of the laser driving circuit, fig. 2 shows a structure of the laser driving circuit, which includes a chip IXDN414, an input of which is a timing signal, and an output terminal of which is connected to the semiconductor laser chip for providing an excitation pulse signal thereto.
Since the detection assembly 20 is used for receiving the light beam reflected or transmitted by the target object, the position of the detection assembly 20 is changed according to the irradiation range of the laser beam on the surface of the target object 40 in order to ensure the optimal receiving effect. While adjusting the irradiation range of the laser beam, the position of the detection assembly 20 changes with the change of the irradiation range, and the light beam reflected or transmitted by the target object can be received to the maximum extent, so as to realize a certain scanning range. The change in position of the probe assembly 20 may be a translation or a rotation. In any case, it is only necessary to ensure that the measurement angle of the detection assembly 20 varies with the irradiation range of the laser beam.
Taking translation as an example, the laser light source assembly comprises at least one translation guide mechanism and at least one translation driving mechanism. The semiconductor laser chip 11 and the detection assembly 20 are movably arranged on the corresponding translation guide mechanisms, and two translation mechanisms can be arranged and respectively correspond to the semiconductor laser chip 11 and the detection assembly 20; or a translation mechanism is provided, on which the semiconductor laser chip 11 and the detection assembly 20 are both arranged. Two translation driving mechanisms can be arranged, and the two translation driving mechanisms respectively drive the semiconductor laser chip 11 and the detection assembly 20 to move on the corresponding translation guiding mechanisms; one may also be provided for driving the semiconductor laser chip 11 and the detection assembly 20 to move on the corresponding translation guide mechanism. Specifically, the movement position of the semiconductor laser chip 11 can be detected, thereby serving as a basis for the movement of the probe assembly 20, i.e., the movement of the probe assembly 20 is dependent on the movement of the semiconductor laser chip 11. The specific number of the translation guide mechanism and the translation driving mechanism is not limited at all, and the translation guide mechanism and the translation driving mechanism can be set according to actual conditions. Alternatively, the translational guide mechanism may be a lead screw and nut mechanism, or a guide rail, or the like. As shown in fig. 3, fig. 3 shows a translation guide mechanism 13 and a translation driving mechanism 14, the semiconductor laser chip 11 and the detection assembly 20 are disposed on the translation guide mechanism 13, and the translation driving mechanism 14 drives the semiconductor laser chip 11 and the detection assembly 20 to translate on the translation guide mechanism 13.
Taking rotation as an example, the laser light source assembly includes a rotation guide mechanism, an angle measurement device, and a rotation driving mechanism. Wherein, the detection component 20 is rotatably arranged on the corresponding rotation guide mechanism, the angle measuring device is used for measuring the light beam rotation angle corresponding to the semiconductor laser chip 11, and the rotation driving mechanism is connected with the angle measuring device and is used for driving the rotation of the detection component 20 based on the measurement result of the angle measuring device. Specifically, the semiconductor laser chip 11 and the detector assembly 20 are rotatably disposed, an angle measuring device (e.g., an angle sensor) is disposed corresponding to the semiconductor laser chip 11, a signal of the angle measuring device is transmitted to the rotation driving mechanism of the detector assembly 20, and the rotation driving mechanism of the detector assembly 20 adjusts the rotation angle of the detector assembly 20 according to the rotation angle of the light beam corresponding to the semiconductor laser chip 11. Wherein the range of the rotation angle of the detecting assembly 20 is at least 90 °.
Alternatively, the beam rotation corresponding to the semiconductor laser chip 11 may be caused by the rotation of the semiconductor laser chip 11, or may be a device that causes the angle of the laser beam to rotate, such as a laser optical modulator, disposed on the optical path between the semiconductor laser chip 11 and the target object 40. The laser optical modulator is disposed on an optical path between the semiconductor laser chip 11 and the target object 40, and is configured to reflect a laser beam emitted by the semiconductor laser chip 11 to the surface of the target object 40 and adjust an irradiation range of the laser beam on the surface of the target object 40. Specifically, the laser optical modulator is a device integrating an optical mirror, and is used for realizing a scanning function of a laser beam on the surface of the target object 40. By combining a Vertical Cavity Surface Emitting Laser (VCSEL) array with a laser optical modulator, the laser beam can realize large-angle and wide-range scanning.
A laser beam emitted from the semiconductor laser chip 11 is irradiated on the laser optical modulator, and the laser beam is reflected to the surface of the target object 40 via an optical mirror provided on the laser optical modulator. The scanning angle of the laser beam on the surface of the target object 40 can be adjusted by adjusting the angle of the optical mirror. The laser optical modulator comprises an optical reflector and a driving device for driving the optical reflector to rotate, wherein the driving device comprises a rotating shaft and a mounting seat, the optical reflector is fixed on the mounting seat, and the rotating shaft drives the mounting seat to rotate so as to drive the optical reflector to rotate.
Optionally, the laser optical modulator is a micro-opto-electro-mechanical system with a mirror. Specifically, as shown in fig. 4, fig. 4 shows a structure of a laser optical modulator, which includes a piezoelectric device 121 (which may be a piezoelectric ceramic block), a beam 124, a torsion beam 123, and a mirror 122. The piezoelectric device 121 is driven to generate mechanical deformation, so as to drive the torsion beam 123 to rotate, thereby driving the mirror 122 to rotate. In specific operation, a laser beam emitted from the semiconductor laser chip 11 irradiates on the reflecting mirror 122 on the laser optical modulator, and irradiates on the surface of the target object 40 after being reflected by the reflecting mirror 122; in the detection process, the piezoelectric device 121 is driven to generate mechanical deformation, and the rotation of the torsion beam 123 drives the mirror 122 to rotate, so as to drive the mirror 122 to rotate, and the scanning range of the laser beam on the surface of the target object 40 can be adjusted. For example, scanning in a range of ± 30 ° may be realized, wherein the scanning angle may be specifically set according to practical situations, and is not limited in any way herein.
The detection component 20 is configured to receive a light beam reflected or transmitted after the laser light beam irradiates the target object, convert the received light beam into a photo-generated current or voltage signal, and send the photo-generated current or voltage signal to the spectral analysis processor. Specifically, referring to fig. 5, the detection assembly 20 includes a detector chip 21 and a readout circuit 22. The detector chip 21 may be a near-infrared radiation sensor for detection and analysis, and may be a semiconductor infrared detector chip with narrow band gap, such as indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), indium antimonide (InSb), InAs/GaSb based superlattice structure, or vanadium oxide, etc., and the detection wavelength covers near-infrared band and medium and long-wave infrared band. The detector chip 21 generally operates under a reverse bias voltage to detect photons reflected or transmitted by the target object 40 to generate a current or convert the current into a voltage signal. Further alternatively, the detector chip 21 is a Focal Plane Array (FPA) detector chip, which can detect and image the components on the surface of the target object.
The readout circuit 22 provides a reverse bias voltage for the detector chip 21 and reads an electrical signal generated by the photoelectric response and outputs the electrical signal to the spectral analysis processor 30, and the readout circuit 22 is an integration of a driving circuit and an electrical signal output circuit of the detector chip, and realizes applying a working voltage to the infrared detector and outputting a photo-generated current (voltage) signal to the spectral analysis processor 30. Specifically, the input end of the readout circuit 22 is connected to the detector chip 21, and the output end is connected to the spectral analysis processor 30; the readout circuit 22 is configured to provide a driving voltage to the detector chip 21, and output a photo-generated current or voltage signal of the detector chip 21 to the spectral analysis processor 30.
Fig. 6 shows the structure of the readout circuit 22, which can be divided into an input circuit, an integrating circuit, and an output circuit in terms of structure. Wherein the input circuit is connected to the detector chip 21 and the output circuit is connected to the spectral analysis processor 30.
The detection assembly 20 further includes an optical modulator (not shown) for converging the light beam reflected or transmitted by the target object on the photosensitive area of the detector chip 21. Referring to fig. 3, the light beam reflected from the target object 40 is converged by the optical modulator and then irradiates the photosensitive area of the detector chip 21. The optical modulator may be a convex lens array, and is used to converge the light beam reflected or transmitted by the target object on the photosensitive area of the detector chip 21, so as to improve the sensitivity of the detector assembly and the signal-to-noise ratio of the signal analysis.
As shown in fig. 1, the spectrum analysis processor 30 is connected to the detection assembly 20, and analyzes the target object 40 based on the photo-generated current or voltage signal sent from the detection assembly 20. Specifically, the spectral analysis processor 30 has a spectral database stored thereon and analysis software running thereon. Wherein the spectral analysis database contains water, protein, oil, fat, starch, lactose, collagen, etcO-H, C-H and N-H bonds and CH4,NH4,CO,NO,H2S, and the like. The analysis software compares the characteristic absorption spectrum collected by the detector assembly 20 with the database spectrum and quickly determines the chemical bonds and specific components thereof, thereby enabling qualitative and substantially quantitative analysis of the target object 40.
Further, when the incident light and the exit light of the target object 40 are nearly coincident, the detection assembly 20 may acquire depth information of the surface of the target object in addition to the plane information of the target object 40. The depth information has the function of reflecting the position of the detected component more accurately when forming a detection report of spectral analysis, and enhancing the readability of the detection report.
An embodiment of the present invention further provides a spectrum analysis apparatus, as shown in fig. 7, the spectrum analysis apparatus 100 includes a cavity and a light exit window 102 formed on the cavity. A preset circuit board 101 is arranged in the cavity, and the spectrum analysis system shown in fig. 1-6 is arranged on the preset circuit board 101.
Referring to fig. 7, the laser beam emitted by the semiconductor laser chip 11 may directly exit from the light exit window 102, or may exit from the light exit window 102 after being reflected by the laser optical modulator, and irradiate on the surface of the target object 40, and the target object 40 is detected by the detection assembly 20 through the light exit window 102 again after being reflected or transmitted. The spectral analysis device further comprises a display component 103, wherein the display component 103 is connected with the spectral analysis system and is used for displaying the result of the spectral analysis.
As shown in fig. 8, a groove (not shown in fig. 8) is further formed on the cavity surface of the spectrum analyzing apparatus for forming a chamber 50 for placing the target object 40. The laser beam emitted by the semiconductor laser chip 11 is transmitted through the target object 40 and then received by the detection assembly 20.
Before the target object 40 is analyzed by the spectral analysis apparatus, it may be determined that the target object 40 is placed outside the spectral analysis apparatus according to the reflectivity of the target object 40 to analyze the reflection of the laser beam by the target object 40; that is, the target object 40 is placed in the recess of the spectral analysis apparatus to analyze the transmission of the laser beam by the target object 40. When analyzing the transmission of the laser beam by the target object 40, the liquid target object 40 may be put into a transparent sight tube, or the powder target object 40 may be attached to a transparent test card and put into the chamber 50, and the characteristic absorption peak may be analyzed by comparing the change of the absorption spectrum before and after the liquid target object is put into the chamber 50, thereby determining the chemical composition thereof.
The spectral analysis device may be a cell phone, laptop or visual microcontroller. Taking a mobile phone as an example, the spectral analysis processor 30 may directly adopt a processor in the mobile phone, the light-emitting window 102 may be opened in an area where a camera of the mobile phone is located, the display component 103 may directly adopt a display component of the mobile phone, and the preset circuit board 101 may be integrated in the mobile phone. Specifically, from the hardware perspective, a preset circuit board may be disposed in the mobile phone, where the circuit board may only include the laser light source assembly 10 and the detection assembly 20, and the spectral analysis processor is integrated in the processor of the mobile phone and is provided with a corresponding input/output communication interface; from the software perspective, installing application software on the mobile phone; by the arrangement, the functions of starting laser scanning by one key, acquiring absorption spectrum by the detection assembly, analyzing characteristic absorption spectrum by software, visually outputting analysis results and the like can be realized.
It should be noted that fig. 1-8 are only schematic diagrams, and do not reflect the size relationship between the components, and the specific component size may be specifically set according to the actual situation.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims (10)

1. A spectroscopic analysis system disposed on a predetermined circuit board, the system comprising:
a laser light source module having a semiconductor laser chip for emitting a laser beam to a target object; the semiconductor laser chip is a semiconductor laser array;
the detection assembly is used for receiving the light beam reflected or transmitted after the laser beam irradiates the target object, converting the received light beam into a photo-generated current or voltage signal and sending the photo-generated current or voltage signal to the spectral analysis processor;
the spectral analysis processor is connected with the detection assembly; wherein the spectral analysis component analyzes the target object based on the photo-generated current or voltage signal.
2. The system of claim 1, wherein the semiconductor laser chip is a GaAs-based semiconductor laser chip, an InP-based semiconductor laser chip, or a GaSb-based semiconductor laser chip.
3. The system of claim 2, wherein the semiconductor laser chip is a vertical cavity surface emitting laser array.
4. The system of any one of claims 1-3, wherein the laser light source assembly comprises:
the semiconductor laser chip and the detection assembly are movably arranged on the corresponding translation guide mechanism;
and the translation driving mechanism is respectively connected with the semiconductor laser chip and the detection assembly and is used for driving the semiconductor laser chip and the detection assembly to move on the translation guiding mechanism.
5. The system of claim 1, wherein the detection component comprises:
the detector chip is used for detecting the light beam reflected or transmitted by the target object and converting the light beam into a photo-generated current or voltage signal;
the input end of the reading circuit is connected with the detector chip, and the output end of the reading circuit is connected with the spectral analysis processor; the readout circuit is used for providing a driving voltage for the detector chip and outputting a photo-generated current or voltage signal of the detector chip to the spectral analysis processor.
6. The system of claim 5, wherein the detection assembly further comprises an optical modulator; the optical modulator is used for converging the light beam reflected or transmitted by the target object on a photosensitive area of the detector chip.
7. The system of claim 6, wherein the detection component is a convex lens array.
8. The system of any one of claims 1-7, wherein the laser beam is a pulsed beam having a pulse width of 10ps-100ns, a frequency of 1KHz-100GHz, and a duty cycle of 0.0001-0.1.
9. A spectroscopic analysis apparatus, comprising:
a chamber having disposed therein the spectroscopic analysis system of any one of claims 1-8;
the light outlet window is formed in the cavity;
and/or the presence of a gas in the gas,
the surface of the cavity is also provided with a groove, and the groove is used for forming a cavity for placing a target object; and the laser beam emitted by the semiconductor laser chip is transmitted by the target object and then received by the detection component.
10. The spectroscopic analysis apparatus of claim 9 wherein the apparatus further comprises:
and the display component is connected with the spectral analysis system and is used for displaying the result of the spectral analysis.
CN201911071373.7A 2019-11-05 2019-11-05 Spectral analysis system and spectral analysis apparatus Pending CN110836866A (en)

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US20120033220A1 (en) * 2010-06-11 2012-02-09 Block Engineering, Llc QCL Spectroscopy System and Applications Therefor
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Application publication date: 20200225