CN110828582A - Post-processing method of anti-reflection and anti-reflection film for solar cell - Google Patents
Post-processing method of anti-reflection and anti-reflection film for solar cell Download PDFInfo
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- CN110828582A CN110828582A CN201810814335.5A CN201810814335A CN110828582A CN 110828582 A CN110828582 A CN 110828582A CN 201810814335 A CN201810814335 A CN 201810814335A CN 110828582 A CN110828582 A CN 110828582A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000012805 post-processing Methods 0.000 title claims abstract description 8
- 238000002791 soaking Methods 0.000 claims abstract description 19
- 239000012266 salt solution Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 16
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 239000005329 float glass Substances 0.000 claims description 6
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 6
- 235000002639 sodium chloride Nutrition 0.000 claims description 6
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 6
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000001103 potassium chloride Substances 0.000 claims description 5
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 4
- 239000003431 cross linking reagent Substances 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 4
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- 235000010333 potassium nitrate Nutrition 0.000 claims description 3
- 239000004323 potassium nitrate Substances 0.000 claims description 3
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 claims description 3
- 229910052939 potassium sulfate Inorganic materials 0.000 claims description 3
- 235000011151 potassium sulphates Nutrition 0.000 claims description 3
- 235000010344 sodium nitrate Nutrition 0.000 claims description 3
- 239000004317 sodium nitrate Substances 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- 235000005074 zinc chloride Nutrition 0.000 claims description 3
- 239000011592 zinc chloride Substances 0.000 claims description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 3
- 229960001763 zinc sulfate Drugs 0.000 claims description 3
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 26
- 239000011248 coating agent Substances 0.000 description 17
- 239000012074 organic phase Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000008346 aqueous phase Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000003837 high-temperature calcination Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000012686 silicon precursor Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a post-processing method of an anti-reflection and anti-reflection film for a solar cell, which comprises the following steps: s1: soaking the substrate plated with the anti-reflection and anti-reflection film in a salt solution; s2: the soaked substrate is calcined at high temperature. The post-processing method provided by the invention is used for optimizing the anti-reflection and anti-reflection film, optimizing the film structure and improving the transmittance, and is simple and universal.
Description
Technical Field
The invention relates to the technical field of film preparation, in particular to a post-processing method of an anti-reflection and anti-reflection film for a solar cell.
Background
With the widespread use of solar cells, the film plating technology of the anti-reflection and anti-reflection film of the solar cell is also continuously developed. The method for coating in the prior art mainly comprises the following steps: 1) preparing a silicon dioxide nano-particle anti-reflection coating by using an organic silicon precursor in an organic solvent such as ethanol and the like by using an acid-base catalyst through a sol-gel method; 2) the anti-reflection coating is prepared by adding acid or alkali solution to water-soluble dispersed silicon dioxide nano particles to adjust the pH value and under the action of components such as a surfactant, a cross-linking agent and the like.
However, when the solution is prepared, the transmittance of the solution to glass or other substrates is improved to a fixed single value, and during the use process, the concentration and other coating parameters need to be continuously optimized to possibly achieve the optimal anti-reflection effect, so a great deal of research is focused on adjusting the type, concentration and other coating parameters of the solution to obtain the anti-reflection and anti-reflection film with high transmittance, but the research on a method for further optimizing the anti-reflection and anti-reflection film after coating is lacked.
Disclosure of Invention
In view of the above, the present invention is directed to a method for post-treating an anti-reflection film for a solar cell, which optimizes the structure of the film by post-treating the anti-reflection film obtained after coating, thereby improving the transmittance.
The invention provides a post-treatment method of an anti-reflection and anti-reflection film for a solar cell, which comprises the following steps: s1: soaking the substrate plated with the anti-reflection and anti-reflection film in a salt solution; s2: the soaked substrate is calcined at high temperature.
Further, the salt solution is selected from one or more of sodium chloride, potassium chloride, sodium nitrate, potassium nitrate, zinc chloride, zinc nitrate, potassium sulfate, sodium sulfate or zinc sulfate.
Further, the concentration of the salt solution is 1-10% wt, preferably 5-10% wt.
Further, the soaking time in the step S1 is 24 to 96 hours, preferably 24 to 72 hours.
Further, the calcination temperature of step S2 is 600-650 ℃.
Furthermore, the anti-reflection and anti-reflection film is a silicon dioxide nanoparticle film.
Further, the silicon dioxide nanoparticle film is prepared by a dip coating method.
Further, the silicon dioxide nanoparticle film is prepared in an organic solvent by using an organic silicon precursor.
Further, the silicon dioxide nanoparticle film is prepared by adding acid or alkali solution to water-soluble dispersed silicon dioxide nanoparticles to adjust the pH value under the action of a surfactant and a cross-linking agent.
Further, the substrate is float glass.
From the above, the method for post-processing the anti-reflection and anti-reflection film for the solar cell provided by the invention optimizes the anti-reflection and anti-reflection film obtained by coating, and optimizes the film structure and improves the transmittance by high-temperature calcination after soaking in the salt solution.
The method provided by the invention is simple and universal, and has an obvious optimized anti-reflection effect on two anti-reflection coating solutions (organic solution phase and water phase) in the current market mainstream.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to specific embodiments below.
The invention provides a post-processing method of an anti-reflection and anti-reflection film for a solar cell, which comprises the following steps: s1: soaking the substrate plated with the anti-reflection and anti-reflection film in a salt solution; s2: the soaked substrate is calcined at high temperature. The post-treatment method optimizes the film structure, improves the transmittance, has few steps, is easy to realize and is convenient for industrial application.
In some embodiments of the present invention, the salt solution in step S1 is selected from one or more of sodium chloride, potassium chloride, sodium nitrate, potassium nitrate, zinc chloride, zinc nitrate, potassium sulfate, sodium sulfate, or zinc sulfate.
In some embodiments of the invention, the concentration of the salt solution in step S1 is preferably 1-10% wt, preferably 5-10% wt.
In some embodiments of the present invention, the soaking time in step S1 is preferably 24 to 96 hours, preferably 24 to 72 hours.
In some embodiments of the invention, step S1 further includes taking out the soaked antireflection film for cleaning. Step S1 further includes drying the cleaned anti-reflection film. Further, the drying condition is 100 ℃ for 10 minutes. Further, a drying or airing process is also included between the two steps of cleaning and drying.
In some embodiments of the present invention, the calcination temperature of step S2 is 600-650 ℃. An alternative calcination time is 10 minutes.
Examples of the experiments
Coating a film on one side of float glass (the tin-plated side of the float glass is completely adhered and covered by using an adhesive tape to avoid deposition of a coating liquid) by using an organic silicon precursor in an organic solvent by a dip coating method, and drying at 100 ℃ for 10min after coating to obtain a silicon dioxide nanoparticle film, which is hereinafter referred to as an organic phase film. Further, the preparation method takes acid and alkali as catalysts. Further, the organic solvent may be selected from ethanol. Further, the organosilicon precursor may be selected from ethyl orthosilicate, trimethylchlorosilane or methoxytrimethylsilane.
Dispersing water-soluble dispersed silicon dioxide nano particles in water, adding acid or alkali solution to adjust the pH value, coating a single surface of float glass (the tin-coated surface of the float glass is completely stuck and covered by using an adhesive tape to avoid depositing a coating solution) by adopting a dip coating method under the action of a surfactant and a cross-linking agent, and drying at 100 ℃ for 10min after coating to obtain a silicon dioxide nano particle film, which is hereinafter referred to as a water-phase film.
It should be noted that the preparation processes of the organic phase thin film and the aqueous phase thin film are conventional technical means in the art, and specific preparation parameters thereof are not described herein.
The two anti-reflection and anti-reflection films are treated by the post-treatment method for the anti-reflection and anti-reflection films, the specific experimental conditions are shown in tables 1 and 2, and the transmittance curve of each sample is tested by an ultraviolet spectrophotometer.
The wavelength range of the ultraviolet spectrophotometer is selected to be 350-1300nm, and the selected range is determined according to the main absorption wavelength range of the thin film (particularly copper indium gallium tin) and the crystalline silicon battery. The weighted transmittance value is obtained by weighting calculation according to AM 1.5 standard solar spectrum data and actually measured transmission spectrum data. The specific calculation method is as follows:
wherein, TWRepresents a 1300nm weighted transmittance value at a wavelength of 350-λ) represents the wavelength increment.
TABLE 1 results of experiments on glass without film and coated with organic phase film under different post-treatment conditions
Note: the post-treatment conditions not specified in the table are the same, for example the high-temperature calcination time.
As can be seen from Table 1, the post-treatment method of the present invention does not change the weighted transmittance of the uncoated glass itself, i.e., the post-treatment method of the present invention is specifically applied to the antireflection film.
As shown in the numbers 3 to 7 in table 1, the weighted transmittance of the organic phase film is 87.3, after the organic phase film is respectively soaked in 5 wt% sodium chloride solution for 24 hours, 48 hours and 72 hours and then calcined at a high temperature of 650 ℃, the weighted transmittance of the organic phase film is continuously improved to 87.8, 88.0 and 88.6, so that secondary optimization of the organic phase film is realized, and particularly when the soaking time is 72 hours, the weighted transmittance improved by the post-treatment method is greater than that improved by the coating process, so that the secondary optimization effect is remarkable.
It can also be seen from the data in table 1 that the weighted transmission of the organic phase film slightly decreases when the soaking time of the salt solution reaches 96 h. With the prolonging of the soaking time of the salt solution, the weighted transmittance of the organic phase film shows a trend of increasing firstly and then decreasing, and the soaking time of the salt solution is set in a proper range, so that the secondary optimization effect of the post-treatment method on the weighted transmittance of the organic phase film is improved.
TABLE 2 results of experiments on glasses without film and coated with aqueous phase film under different post-treatment conditions
Note: the post-treatment conditions not specified in the table are the same, for example the high-temperature calcination time.
As can be seen from Table 2, the weighted transmittance of the uncoated glass itself was also unchanged after soaking in 5 wt% potassium chloride solution, which also indicates that the post-treatment method of the present invention is specifically applied to the anti-reflection and anti-reflection film.
As shown in the numbers 3 to 7 in table 2, the weighted transmittance of the aqueous phase film is 87.6, after 5 wt% potassium chloride solution is soaked for 24 hours, 48 hours and 72 hours respectively, the aqueous phase film is calcined at 650 ℃ and the weighted transmittance of the aqueous phase film is continuously improved to 88.1, 88.5 and 89.0 respectively, so that secondary optimization of the aqueous phase film is realized, and particularly when the soaking time is 72 hours, the weighted transmittance improved by the post-treatment method is greater than the weighted transmittance improved by the coating process, and the secondary optimization effect is remarkable.
It can also be seen from the data in table 2 that when the soaking time of the salt solution reaches 96 hours, the weighted transmittance of the water phase film is slightly reduced, and it can be seen that after the salt solution is fixed, the weighted transmittance of the water phase film tends to increase first and then decrease as the soaking time of the salt solution is prolonged, and the soaking time of the salt solution is set in a proper range, which is beneficial to improving the secondary optimization effect of the method for the post-treatment of the anti-reflection and anti-reflection film on the weighted transmittance of the film.
The experimental results in tables 1 and 2 show that the method for post-treating the anti-reflection and anti-reflection film for the solar cell provided by the invention can optimize the film obtained by the coating solution with the organic phase as the solvent and the film obtained by the coating solution with the water phase as the solvent, and has a wide application range.
Without being bound by the existing theory, the inventor believes that the post-treatment method in the invention optimizes the structure of the film and improves the transmittance by the following mechanism: when the film is soaked by salt, the salt etches the film to form holes, the refractive index of the film is optimized, the surface of the film is roughened, the transmittance is increased, the influence of the soaking time on the transmittance is similar to a parabola, the vertex is reached in 72 hours, and if the soaking time is too long, the film is completely corroded; high-temperature calcination improves the hardness of the film and ensures the wear resistance.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the invention, also features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the invention as described above, which are not provided in detail for the sake of brevity.
While the present invention has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art in light of the foregoing description.
The embodiments of the invention are intended to embrace all such alternatives, modifications and variances that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, substitutions, improvements and the like that may be made without departing from the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A post-processing method of an anti-reflection and anti-reflection film for a solar cell is characterized by comprising the following steps: s1: soaking the substrate plated with the anti-reflection and anti-reflection film in a salt solution; s2: the soaked substrate is calcined at high temperature.
2. The post-treatment method according to claim 1, wherein the salt solution is selected from one or more of sodium chloride, potassium chloride, sodium nitrate, potassium nitrate, zinc chloride, zinc nitrate, potassium sulfate, sodium sulfate or zinc sulfate.
3. The post-treatment method according to claim 1, characterized in that the concentration of the salt solution is 1-10% wt, preferably 5-10% wt.
4. The post-treatment method according to claim 1, wherein the soaking time in step S1 is 24-96 hours, preferably 24-72 hours.
5. The post-treatment method as claimed in claim 1, wherein the calcination temperature of step S2 is 600-650 ℃.
6. The post-treatment method according to claim 1, wherein the antireflection film is a silica nanoparticle film.
7. The post-treatment method according to claim 6, wherein the silica nanoparticle thin film is prepared by a Czochralski coating method.
8. The post-treatment method according to claim 6, wherein the silica nanoparticle thin film is prepared in an organic solvent using an organosilicon precursor.
9. The post-treatment method according to claim 6, wherein the silica nanoparticle film is prepared by using water-soluble dispersed silica nanoparticles, adding an acid or alkali solution to adjust the pH value, and reacting with a surfactant and a cross-linking agent.
10. The post-treatment method according to claim 1, wherein the substrate is float glass.
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|---|---|---|---|
| CN201810814335.5A CN110828582A (en) | 2018-07-23 | 2018-07-23 | Post-processing method of anti-reflection and anti-reflection film for solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810814335.5A CN110828582A (en) | 2018-07-23 | 2018-07-23 | Post-processing method of anti-reflection and anti-reflection film for solar cell |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57196743A (en) * | 1981-05-28 | 1982-12-02 | Agency Of Ind Science & Technol | Manufacture of reflection preventing glass |
| CN105753337A (en) * | 2016-03-02 | 2016-07-13 | 同济大学 | Preparation method of green and environment-friendly low-cost antireflection film |
| CN106810082A (en) * | 2016-11-28 | 2017-06-09 | 佛山市尚好门窗有限责任公司 | A kind of preparation method of solar energy film anti-reflection film |
-
2018
- 2018-07-23 CN CN201810814335.5A patent/CN110828582A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57196743A (en) * | 1981-05-28 | 1982-12-02 | Agency Of Ind Science & Technol | Manufacture of reflection preventing glass |
| CN105753337A (en) * | 2016-03-02 | 2016-07-13 | 同济大学 | Preparation method of green and environment-friendly low-cost antireflection film |
| CN106810082A (en) * | 2016-11-28 | 2017-06-09 | 佛山市尚好门窗有限责任公司 | A kind of preparation method of solar energy film anti-reflection film |
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