CN106810082A - A kind of preparation method of solar energy film anti-reflection film - Google Patents
A kind of preparation method of solar energy film anti-reflection film Download PDFInfo
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- CN106810082A CN106810082A CN201611058881.8A CN201611058881A CN106810082A CN 106810082 A CN106810082 A CN 106810082A CN 201611058881 A CN201611058881 A CN 201611058881A CN 106810082 A CN106810082 A CN 106810082A
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- film
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- reflection film
- glass substrate
- solar energy
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/25—Oxides by deposition from the liquid phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/11—Deposition methods from solutions or suspensions
- C03C2218/111—Deposition methods from solutions or suspensions by dipping, immersion
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Silicon Compounds (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Sol-gal process is one of the important method for preparing thin-film material, with process is simple, it is easily controllable the features such as.The anti-reflection film prepared using the method has that transmitance is high, low manufacture cost, the features such as film forming area is big, but apply and be also difficult to meet application requirement on solar energy anti-reflection film, being mainly manifested in its environmental stability still has deficiency, simultaneously, the presence of steam can also make antireflecting silicon dioxide film degrade, and cause film layer to come off.The invention discloses a kind of novel single-layer mesoporous silica anti-reflection film, by the effective control to film inside aperture, film is possessed high environmental stability, reach more than ten times of conventional film, there is larger application potential in solar cell industry field.
Description
Method field
The present invention relates to area of solar cell, and in particular to a kind of preparation method of solar energy film anti-reflection film.
Method background
Thin film solar cell can be used in cheap glass, plastics, ceramics, graphite, and the different materials such as sheet metal work as base
Plate is manufactured, and formation can produce the film thickness of voltage only to need several μm, therefore can be compared with Silicon Wafer too under same light-receiving area
Positive energy battery is greatly decreased the consumption (thickness can be less than Silicon Wafer solar cell more than 90%) of raw material, current laboratory conversion
Efficiency highest is up to more than 20%, scale volume production stabilization efficiency a maximum of about of 13%.Thin film solar cell in addition to plane, also because
It is that can be fabricated to non-planar configuration its range of application with pliability big, can be combined with building or become the one of building body
Partly, in thin film solar cell manufacture, then deposition miscellaneous (deposition) method, layer upon layer ground can be used
P-type or n-type material is long up, and common thin film solar cell has non-crystalline silicon, CuInSe2 (CIS), CuInGaSe2
And CdTe.. etc. (CIGS).
Sol-gel process is one of the important method for preparing thin-film material, with process is simple, it is easily controllable the features such as.
The anti-reflection film prepared using the method has the features such as transmitance is high, low manufacture cost, and film forming area is big, but applies in solar energy
It is also difficult to meet application requirement on anti-reflection film, being mainly manifested in its environmental stability still has deficiency, meanwhile, the presence of steam also can
Antireflecting silicon dioxide film is degraded, cause film layer to come off.
The content of the invention
Purpose of the invention is to provide a kind of preparation method of solar energy film anti-reflection film, solves current sol-gel process
The problems such as preparing environmental stability deficiency and the degradable silica when on solar energy anti-reflection film.
In order to solve problem above, the method scheme taken is：
（1）Glass substrate is pre-processed；
（2）The preparation of colloidal sol；
（3）Glass substrate is immersed in colloidal sol, is stopped two minutes, make the abundant Sized glass substrate of colloidal sol；
（4）At the uniform velocity lifting glass substrate carries out plated film；
（5）The diaphragm that will be prepared dries 1h at 50 DEG C；
（6）10min is heat-treated at 500 DEG C；
（7）Diaphragm is taken out and naturally cools to room temperature.
Preferably, the preparation of colloidal sol is solvent using ethanol, and tetraethyl orthosilicate and dimethyldiethoxysilane are forerunner
Body issues raw hydrolytie polycondensation and forms silicon dioxide gel in hydrochloric acid catalysis.
Preferably, dimethyldiethoxysilane is pore creating material in preparation process.
Beneficial effect
High stability one way micropore two is prepared in acid condition the beneficial effects of the present invention are using sol-gel process
Silica anti-reflection film.The new anti-reflection film has high transmittance, excellent mechanical properties and good environmental stability concurrently, in the sun
Energy field of batteries is expected to be used widely.
Specific embodiment
The present invention is further described in detail with reference to embodiment, to make art processes personnel with reference to specification text
Word can be implemented according to this.
Embodiment 1：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 9：1.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 2：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 8:2.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 3：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 7:3.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 4：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 6:4.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 5：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 5:5.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 6：
With ethanol as solvent, tetraethyl orthosilicate and dimethyldiethoxysilane prepare dioxy for presoma under the catalysis of hydrochloric acid
SiClx colloidal sol.The colloidal sol for preparing Chen Hua 7 days at room temperature.
Wherein the ratio between mole of tetraethyl orthosilicate and dimethyldiethoxysilane is 4:6.
By glass substrate using deionized water rinsing it is clean after 3h is soaked in absolute ethyl alcohol, wiped using dust-free paper after taking-up
It is dry, as in 90 DEG C of drying boxes.
Glass substrate is slowly immersed in colloidal sol, is stopped two minutes, at the uniform velocity lifted after making the abundant Sized glass substrate of colloidal sol
Glass substrate carries out plated film.
After the diaphragm that will be prepared dries 1h at 50 DEG C, 10min is processed at 500 DEG C, finally naturally cool to room temperature.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
Embodiment 7：
The alkali silicon anti-reflection film recorded using document naturally cools to room temperature after being heat-treated 10min at 500 DEG C.
Diaphragm is carried out into transmission measurement, hardness test, environmental stability test.
The method of testing of the present embodiment uses following methods：
Transmission measurement：Tested using ultraviolet-visible spectrophotometer, using the visible ray of 550nm wavelength.
Hardness test：Transmitance is tested after testing 500 times using rub resistance.
Environmental stability：Using accelerated corrosion experimental test.Film layer is placed in 80 DEG C of sodium chloride solution and is soaked
10min, takes out the transmitance of test film layer.
The performance test results of the present embodiment are as follows：
By result above as can be seen that the anti-reflection film prepared by the present invention is in transmitance, hardness test, environmental stability is all excellent
In the alkali silicon anti-reflection film that document is recorded.
Finally it should be noted that above example is only used to illustrate method of the present invention scheme rather than the present invention is protected
The limitation of scope, although being elaborated to the present invention with reference to preferred embodiment, the commonsense method personnel of this area should manage
Solution, can modify or equivalent, without deviating from the essence and model of the inventive method scheme to method of the present invention scheme
Enclose.
Claims (6)
1. a kind of preparation method of solar energy film anti-reflection film, it is characterised in that made in acid condition using sol-gel process
Standby high stability individual layer mesoporous silica anti-reflection film.
2. a kind of preparation method of solar energy film anti-reflection film according to claim 1, it is characterised in that the former material for using
Material includes：Tetraethyl orthosilicate, absolute ethyl alcohol, hydrochloric acid, dimethyldiethoxysilane and pure water.
3. the preparation method of a kind of solar energy film anti-reflection film according to claim 1, it is characterised in that use czochralski method
Plated film is carried out to glass substrate.
4. a kind of preparation method of solar energy film anti-reflection film according to claim 1, it is characterised in that preparation method bag
Include following steps：
（1）Glass substrate is pre-processed；
（2）The preparation of colloidal sol；
（3）Glass substrate is immersed in colloidal sol, is stopped two minutes, make the abundant Sized glass substrate of colloidal sol；
（4）At the uniform velocity lifting glass substrate carries out plated film；
（5）The diaphragm that will be prepared dries 1h at 50 DEG C；
（6）10min is heat-treated at 500 DEG C；
（7）Diaphragm is taken out and naturally cools to room temperature.
5. the preparation method of a kind of solar energy film anti-reflection film according to claim 1 or 4, it is characterised in that colloidal sol
It is solvent to prepare using ethanol, and tetraethyl orthosilicate and dimethyldiethoxysilane issue unboiled water solution for presoma in hydrochloric acid catalysis
Polycondensation forms silicon dioxide gel.
6. the preparation method of a kind of solar energy film anti-reflection film according to claim 1 and 2, it is characterised in that during colloidal sol
Dimethyldiethoxysilane is added as pore creating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611058881.8A CN106810082A (en) | 2016-11-28 | 2016-11-28 | A kind of preparation method of solar energy film anti-reflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611058881.8A CN106810082A (en) | 2016-11-28 | 2016-11-28 | A kind of preparation method of solar energy film anti-reflection film |
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| CN106810082A true CN106810082A (en) | 2017-06-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331712A (en) * | 2017-06-27 | 2017-11-07 | 过春明 | A kind of solar cell anti-reflection film |
| CN110828582A (en) * | 2018-07-23 | 2020-02-21 | 北京铂阳顶荣光伏科技有限公司 | Post-processing method of anti-reflection and anti-reflection film for solar cell |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104609738A (en) * | 2013-11-01 | 2015-05-13 | 北京有色金属研究总院 | Method used for increasing silicon dioxide antireflection film hole stability |
-
2016
- 2016-11-28 CN CN201611058881.8A patent/CN106810082A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104609738A (en) * | 2013-11-01 | 2015-05-13 | 北京有色金属研究总院 | Method used for increasing silicon dioxide antireflection film hole stability |
Non-Patent Citations (1)
| Title |
|---|
| 商孟莹等: "新型溶胶－凝胶二氧化硅微孔增透膜的制备及性能研究", 《光谱学与光谱分析》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331712A (en) * | 2017-06-27 | 2017-11-07 | 过春明 | A kind of solar cell anti-reflection film |
| CN110828582A (en) * | 2018-07-23 | 2020-02-21 | 北京铂阳顶荣光伏科技有限公司 | Post-processing method of anti-reflection and anti-reflection film for solar cell |
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Application publication date: 20170609 |
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