CN104005011A - Preparation method for Cu-Al co-doped p-type ZnO film - Google Patents
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- 229910017767 Cu—Al Inorganic materials 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 16
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 229960004756 ethanol Drugs 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 8
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical group OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 8
- 150000003751 zinc Chemical class 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 6
- 238000007669 thermal treatment Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000002203 pretreatment Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- YMHOBZXQZVXHBM-UHFFFAOYSA-N 2,5-dimethoxy-4-bromophenethylamine Chemical group COC1=CC(CCN)=C(OC)C=C1Br YMHOBZXQZVXHBM-UHFFFAOYSA-N 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 2
- 241000545067 Venus Species 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000001035 drying Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 39
- 238000002834 transmittance Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 238000003980 solgel method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910018085 Al-F Inorganic materials 0.000 description 1
- 229910018179 Al—F Inorganic materials 0.000 description 1
- 229910018509 Al—N Inorganic materials 0.000 description 1
- 102000040350 B family Human genes 0.000 description 1
- 108091072128 B family Proteins 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000006136 alcoholysis reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
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- 239000007791 liquid phase Substances 0.000 description 1
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- 238000012876 topography Methods 0.000 description 1
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- Chemically Coating (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a preparation method for a Cu-Al co-doped p-type ZnO film and belongs to the technical field of semiconductor materials and luminescent materials. The method comprises: dropwise adding a prepared Cu-Al co-doped ZnO colloidal solution on a substrate, coating a film in a spin coating manner, drying, and performing annealing processing, so as to obtain the needed film. The Cu-Al co-doped p-type ZnO film exhibits good optical characteristics. The method has the advantages of low synthetic temperature, good film-forming uniformity, large film-forming area, strong adhesive force with the substrate, atom-grade doping easiness, accurately controllable doping level, simple technology and the like.
Description
Technical field
The present invention relates to a kind of preparation method of Cu-Al codoped p type ZnO film, belong to semiconductor material, luminescent material technical field.
Background technology
Sol-gel technique (sol-gel) is novel, the efficient edge of the one masking technique of preparing in the wet chemical method of material, and its initial research utilizes SiCl by J.J.Ebelmen
4after mixing with ethanol, in wet air, there is hydrolysis and formed gel; But it is after the twenties in last century that sol-gel technique is really applied to the wet chemical of material standby, and 1936, W.Geffcken etc. utilized the hydrolysis of metal alkoxide and gelation to prepare sull.German H.Dishch in 1971 utilize metal alkoxide hydrolysis obtain colloidal sol, through gelation, process under the pressure of 923-973K and 100N again, prepare multicomponent glass; 1975, B.E.Yoldas and M.Yamane etc., by gel drying, prepared monolithic ceramic material and porous transparent alumina film; Since the eighties, the application that sol-gel technique is succeeded in the material preparations such as glass, function ceramics powder, oxide coating, this means that sol-gel technique is effectively utilized day by day.
The ultimate principle of sol-sol technology is: first utilize the cationic salt of containing metal or metal alkoxide wiring solution-forming, reactant is even hybrid concurrency unboiled water solution or alcoholysis reaction under liquid phase, form stable sol system, colloidal sol changes oxide compound that gel forms through thermal treatment again or the method for other compound solid into through ageing or suitable technical finesse again.At present, about ZnO thin film doped preparation method has a lot, but sol-gel method is a kind of preparation method of cheapness, and without the vacuum apparatus of complex and expensive, preparation technology is simple; Can within the scope of molecular level, control its composition, film forming good uniformity, Tc is low, can big area and shaped piece film forming, can be used for scale operation.
ZnO has wide prospect in the research and development of Novel Optoelectronic Device, be expected to develop blue light, the multiple luminescent device such as UV-light, the stable and p-type Zn0 material repeatably of preparation for what realize that these rosy prospects are badly in need of solving, in the preparation process of ZnO film, the N-shaped doping of ZnO is easier to realize, and its reason is because the low energy intrinsic alms giver defects such as He Yang room, zinc gap make ZnO present N-shaped electroconductibility.But the p-type of ZnO film changes very difficult realization in actual procedure, its major cause is that the native defect of ZnO can produce self-compensating effect, and acceptor impurity solid solubility is very low.Thereby restrict research and the application of ZnO material at photoelectric field.The doped element of p-type ZnO is selected I family element (I A:Li, Na, K conventionally; I B:Au, Ag, Cu) or group Ⅴ element (N, P, As) etc.But there are some researches show, singly mixing of ZnO is difficult to obtain stable p-type electric-conducting, in order to improve its stability, its codoped is studied, it is reported, Krtschil etc. utilize MOVPE technology to prepare the p-type ZnO film of the two acceptor's codopeds of N-As, and the people such as Zhou Liping have also realized p-type transformation by Al-F codoped.The lowest resistivity of film is 6.5 × 10
-2Ω .cm.In recent years, the people such as Ji Zhenguo, Lv Jianguo of Zhejiang University has also carried out a large amount of work to the p-type doping of ZnO film, and research finds that Al-N codoped can make ZnO p-type, utilizes common method for manufacturing thin film and can realize.
Summary of the invention
The technical problem to be solved in the present invention is the problem that the ZnO film that exists in prior art is difficult to be p-type, the invention provides a kind of preparation method of Cu-Al codoped p type ZnO film, specifically comprises the steps:
(1) presoma zinc salt and doping agent are dissolved in organic solvent, then add stablizer, obtain the solution mixing;
(2) the preparation-obtained mixing solutions of step (1) being placed in to bath temperature is the water bath with thermostatic control of the 55-85 DEG C 2-3h that heats while stirring;
(3) solution preparing in step (2) is at room temperature placed to 1-2 days, prepare the ZnO colloidal sol of homogeneous transparent;
(4) substrate is successively put into acetone, ethanol, deionized water, ethanol and carries out respectively ultrasonic cleaning 30-60min, then dry up be kept in dehydrated alcohol for subsequent use;
(5) ZnO colloidal sol step (3) being prepared drips on substrate cleaned in step (4), and carries out plated film in the mode of spin coating, and spin speed is 1000r/min ~ 3000 r/min;
(6) substrate material after step (5) gained plated film is placed to 10min ~ 30min in air, then dry 20 ~ 40min in 120 DEG C ~ 180 DEG C, takes out naturally cooling in air;
(7) repeating step (5) and step obtain the substrate material after heating for (6) 5 ~ 25 times;
(8) substrate material after the heating of step (7) gained is carried out to pre-treatment in early stage 10 ~ 40min at 250 ~ 320 DEG C, continue to be warming up to 450 ~ 550 DEG C and carry out later stage thermal treatment 1 ~ 4h, obtain Cu-Al codope ZnO film.
Presoma zinc salt of the present invention is organic zinc salt or inorganic zinc salt, and in the solution mixing, the volumetric molar concentration of zine ion is 0.5 ~ 2mol/L.
Solvent of the present invention is the one in dehydrated alcohol, ethylene glycol monomethyl ether, Virahol.
Stablizer of the present invention is diethanolamine or monoethanolamine, and in mixed solution, the mol ratio of diethanolamine or monoethanolamine and zine ion is 1:1.
Doping agent of the present invention is venus crystals/cupric nitrate and aluminum nitrate/aluminum chloride, and wherein Cu doping is that 1% ~ 10%, Al doping is 0.5% ~ 5%.
Principle of the present invention: prepare p-type ZnO film by the technology of mixing altogether, mix zinc room by the metal ion Cu of I B family ion, form deep acceptor, again by mixing a small amount of III metal ion Al of family ion, regulating it to be with makes it become shallow acceptor energy level, change thereby realize p-type, the present invention adopts sol-gel spin coating technique on glass substrate, to prepare Cu and Al codoped p type ZnO film.
Beneficial effect of the present invention: the preparation-obtained p-type ZnO film of the present invention crystal property is good, surface topography is better, without crack performance, and in visible-range, show good optical property, sol-gel method craft step is simple simultaneously, without large-scale experiment equipment, sintering temperature is lower than ordinary method, easily realize doping, can obtain the large area film of surface uniform, can be used for scale operation.
Brief description of the drawings
Fig. 1 is the transmitted spectrum of sample in embodiment 1;
Fig. 2 is the PL spectrum of sample in embodiment 1;
Fig. 3 is the transmitted spectrum of sample in embodiment 2;
Fig. 4 is the transmitted spectrum of sample in embodiment 3;
Fig. 5 is the transmitted spectrum of sample in embodiment 4;
Fig. 6 is the transmitted spectrum of sample in embodiment 5;
Fig. 7 is the transmitted spectrum of sample in embodiment 6;
Fig. 8 is the transmitted spectrum of sample in embodiment 7;
Fig. 9 is the transmitted spectrum of sample in embodiment 8.
Embodiment
Below in conjunction with accompanying drawing and specific examples, the invention will be further described, but protection scope of the present invention is not limited to described content.
Embodiment 1
Described in the present embodiment, the preparation method of Cu-Al codoped p type ZnO film, specifically comprises the steps:
(1) by presoma (Zn (CH
3cOO)
2.2H
2and doping agent [Cu (CH O)
3cOO)
2.H
2o] and [Al (NO
3)
3.9H
2o] be dissolved in the dehydrated alcohol of 100ml, in solution, the volumetric molar concentration of Zn ion is 0.5mol/L, Cu doping is 1%, Al doping is 0.5%, be 1:1 by the mol ratio of diethanolamine and zine ion again, add diethanolamine as stablizer, obtain the solution mixing;
(2) the preparation-obtained mixing solutions of step (1) being placed in to bath temperature is the water bath with thermostatic control of the 55 DEG C 3h that heats while stirring;
(3) solution preparing in step (2) is at room temperature placed 1 day, prepared the ZnO colloidal sol of homogeneous transparent;
(4) substrate is successively put into acetone, ethanol, deionized water, ethanol and carries out respectively ultrasonic cleaning 30min, then dry up be kept in dehydrated alcohol for subsequent use;
(5) ZnO colloidal sol step (3) being prepared drips on substrate cleaned in step (4), and carries out plated film in the mode of spin coating, and spin speed is 1000r/min;
(6) substrate material after step (5) gained plated film is placed to 10min in air, then dry 40min in 120 DEG C, takes out naturally cooling in air;
(7) repeating step (5) and obtain for (6) 5 times heating after substrate material;
(8) substrate material after the heating of step (7) gained is carried out to pre-treatment in early stage 40min at 320 DEG C, continue to be warming up to 550 DEG C and carry out later stage thermal treatment 4h, obtain Cu-Al codope ZnO film.
The Cu-Al codope ZnO film that described in the present embodiment, method prepares has higher transmittance within the scope of visible ray 380-800nm compared with Cu doping ZnO, average transmittance is in 88% left and right; The sample preparing has occurred that wavelength is positioned at the ultra-violet light-emitting peak of 368nm (3.37eV) and 398nm (3.12eV) left and right.The stronger blue light emitting peak in the weak blue light emitting peak of 450nm (2.759eV) and 483nm (2.57eV) left and right and 468nm (2.653eV) left and right.
Embodiment 2
Described in the present embodiment, the preparation method of Cu-Al codoped p type ZnO film, specifically comprises the steps:
(1) by presoma (Zn(NO
3)
2.2H
2o) and doping agent cupric nitrate and aluminum chloride be dissolved in the ethylene glycol monomethyl ether of 100ml, in solution, the volumetric molar concentration of Zn ion is 2mol/L(maximum value), Cu doping is 10%, Al doping is 0.5%, be 1:1 by the mol ratio of diethanolamine and zine ion again, add diethanolamine as stablizer, obtain the solution mixing;
(2) the preparation-obtained mixing solutions of step (1) being placed in to bath temperature is the water bath with thermostatic control of the 85 DEG C 2h that heats while stirring;
(3) solution preparing in step (2) is at room temperature placed 2 days, prepared the ZnO colloidal sol of homogeneous transparent;
(4) substrate is successively put into acetone, ethanol, deionized water, ethanol and carries out respectively ultrasonic cleaning 60min, then dry up be kept in dehydrated alcohol for subsequent use;
(5) ZnO colloidal sol step (3) being prepared drips on substrate cleaned in step (4), and carries out plated film in the mode of spin coating, and spin speed is 3000 r/min;
(6) substrate material after step (5) gained plated film is placed to 30min in air, then dry 20min in 180 DEG C, takes out naturally cooling in air;
(7) repeating step (5) and obtain for (6) 25 times heating after substrate material;
(8) substrate material after the heating of step (7) gained is carried out to pre-treatment in early stage 10min at 250 DEG C, continue to be warming up to 480 DEG C and carry out later stage thermal treatment 1h, obtain Cu-Al codope ZnO film.
The transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 67%.
Embodiment 3
Described in the present embodiment, the preparation method of Cu-Al codoped p type ZnO film, specifically comprises the steps:
(1) by presoma (Zn (CH
3cOO)
2.2H
2o) and doping agent cupric nitrate and aluminum nitrate be dissolved in the ethylene glycol monomethyl ether of 100ml, in solution, the volumetric molar concentration of Zn ion is 2mol/L(maximum value), Cu doping is 2%, Al doping is 1.5%, be 1:1 by the mol ratio of monoethanolamine and zine ion again, add monoethanolamine as stablizer, obtain the solution mixing;
(2) the preparation-obtained mixing solutions of step (1) being placed in to bath temperature is the water bath with thermostatic control of the 70 DEG C 2.5h that heats while stirring;
(3) solution preparing in step (2) is at room temperature placed 1.5 days, prepared the ZnO colloidal sol of homogeneous transparent;
(4) substrate is successively put into acetone, ethanol, deionized water, ethanol and carries out respectively ultrasonic cleaning 40min, then dry up be kept in dehydrated alcohol for subsequent use;
(5) ZnO colloidal sol step (3) being prepared drips on substrate cleaned in step (4), and carries out plated film in the mode of spin coating, and spin speed is 2000 r/min;
(6) substrate material after step (5) gained plated film is placed to 20min in air, then dry 20min in 160 DEG C, takes out naturally cooling in air;
(7) repeating step (5) and obtain for (6) 15 times heating after substrate material;
(8) substrate material after the heating of step (7) gained is carried out to pre-treatment in early stage 25min at 300 DEG C, continue to be warming up to 500 DEG C and carry out later stage thermal treatment 2h, obtain Cu-Al codope ZnO film.
As shown in Figure 4, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 90%.
Embodiment 4
Institute is in steps with embodiment 3, and difference is Cu doping 4% in step (1).As shown in Figure 5, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 81%.
Embodiment 5
Institute is in steps with embodiment 3, and difference is Cu doping 6% in step (1).As shown in Figure 6, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 73%.
Embodiment 6
Institute is in steps with embodiment 3, and difference is Cu doping 2% in step (1), and Al doping is 1%.As shown in Figure 7, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 83%.
Embodiment 7
Institute is in steps with embodiment 3, and difference is Cu doping 0% in step (1).As shown in Figure 8, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 91%.
Embodiment 8
Institute is in steps with embodiment 3, and difference is Al doping 0% in step (1).As shown in Figure 9, the average transmittance of the Cu-Al codope ZnO film that described in the present embodiment, method prepares in visible-range reaches 70%.
Claims (5)
1. a preparation method for Cu-Al codoped p type ZnO film, is characterized in that comprising the following steps:
(1) presoma zinc salt and doping agent are dissolved in organic solvent, then add stablizer, obtain the solution mixing;
(2) the preparation-obtained mixing solutions of step (1) being placed in to bath temperature is the water bath with thermostatic control of the 55-85 DEG C 2-3h that heats while stirring;
(3) solution preparing in step (2) is at room temperature placed to 1-2 days, prepare the ZnO colloidal sol of homogeneous transparent;
(4) substrate is successively put into acetone, ethanol, deionized water, ethanol and carries out respectively ultrasonic cleaning 30-60min, then dry up be kept in dehydrated alcohol for subsequent use;
(5) ZnO colloidal sol step (3) being prepared drips on substrate cleaned in step (4), and carries out plated film in the mode of spin coating, and spin speed is 1000r/min ~ 3000 r/min;
(6) substrate material after step (5) gained plated film is placed to 10min ~ 30min in air, then dry 20 ~ 40min in 120 DEG C ~ 180 DEG C, takes out naturally cooling in air;
(7) repeating step (5) and step (6) obtain the substrate material after heating for 5-25 time;
(8) substrate material after the heating of step (7) gained is carried out to pre-treatment in early stage 10 ~ 40min at 250 ~ 320 DEG C, continue to be warming up to 450 ~ 550 DEG C and carry out later stage thermal treatment 1 ~ 4h, obtain Cu-Al codope ZnO film.
2. the preparation method of Cu-Al codoped p type ZnO film according to claim 1, is characterized in that: described presoma zinc salt is organic zinc salt or inorganic zinc salt, and in the solution mixing, the volumetric molar concentration of zine ion is 0.5 ~ 2mol/L.
3. the preparation method of Cu-Al codoped p type ZnO film according to claim 1, is characterized in that: described solvent is the one in dehydrated alcohol, ethylene glycol monomethyl ether, Virahol.
4. the preparation method of Cu-Al codoped p type ZnO film according to claim 1, is characterized in that: described stablizer is diethanolamine or monoethanolamine, and in mixed solution, the mol ratio of diethanolamine or monoethanolamine and zine ion is 1:1.
5. the preparation method of Cu-Al codoped p type ZnO film according to claim 1, is characterized in that: described doping agent is venus crystals/cupric nitrate and aluminum nitrate/aluminum chloride, and wherein Cu doping is that 1% ~ 10%, Al doping is 0.5% ~ 5%.
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| CN105603400A (en) * | 2016-01-21 | 2016-05-25 | 深圳市国华光电科技有限公司 | Preparation method of ZnO transparent conductive film |
| CN107507660A (en) * | 2017-08-14 | 2017-12-22 | 高崇光 | A kind of method that short annealing prepares nesa coating |
| CN107507660B (en) * | 2017-08-14 | 2019-06-21 | 高崇光 | A kind of method of short annealing preparation transparent conductive film |
| CN107689272A (en) * | 2017-08-25 | 2018-02-13 | 南昌航空大学 | One species graphene carbonitride Modification on Al adulterates the preparation method of ZnO transparent conductive thin film |
| CN107689272B (en) * | 2017-08-25 | 2019-02-05 | 南昌航空大学 | The preparation method of one type graphene carbonitride Modification on Al doping ZnO transparent conductive thin film |
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Application publication date: 20140827 |