CN110824313A - Defect simulation structure of closed gas insulated switchgear - Google Patents
Defect simulation structure of closed gas insulated switchgear Download PDFInfo
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- CN110824313A CN110824313A CN201911165314.6A CN201911165314A CN110824313A CN 110824313 A CN110824313 A CN 110824313A CN 201911165314 A CN201911165314 A CN 201911165314A CN 110824313 A CN110824313 A CN 110824313A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- Physics & Mathematics (AREA)
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- Gas-Insulated Switchgears (AREA)
Abstract
The application relates to a defect simulation structure of a closed gas insulated switchgear. The defect simulation structure of the closed gas insulated switchgear comprises a shell, a conductor and a defect body. The housing encloses a first space. The first space is filled with an inert gas. The conductor is accommodated in the first space. The conductor is used for being electrically connected with a power supply. The defect body is accommodated in the first space. The electrical property of the defect simulation structure of the defect body in the closed gas insulation combined electrical apparatus is the same as that of the defect in the closed gas insulation combined electrical apparatus, so that the defect simulation structure of the closed gas insulation combined electrical apparatus can simulate the structure of the closed gas insulation combined electrical apparatus.
Description
Technical Field
The application relates to the technical field of detection, in particular to a defect simulation structure of a closed gas insulated switchgear.
Background
The enclosed gas-insulated combined electric appliance is a high-voltage device which is composed of circuit breaker, isolating switch, grounding switch, mutual inductor, lightning arrester, bus, connecting piece and wire-outgoing terminal, etc. and is enclosed in metal grounding shell, and it generally adopts SF6The gas acts as an insulating and arc-extinguishing medium. The enclosed gas-insulated combined electrical apparatus has small floor area and space, is safe and reliable, is beneficial to environmental protection and installation workloadThe maintenance period is long, and the like, so the method is widely applied to power systems. However, because the enclosed gas insulated switchgear is a totally enclosed combined power device, once an accident occurs, the consequences are more serious than those of a separated open device, the fault repair is also more complicated, the power failure range is large, and non-fault elements are often involved. Therefore, it is important to detect defects in the closed gas insulated switchgear.
Common defects in the closed gas insulated switchgear mainly include defects of metal protrusions, metal suspension potential, free metal particles, air bubbles inside the insulator, dirt on the surface of the insulator and the like. When fault detection of the closed gas insulated switchgear is carried out, partial discharge conditions caused by different defects need to be acquired so as to carry out defect influence research. At present, no test model capable of simulating the defects of the closed gas insulated switchgear exists.
Disclosure of Invention
In view of the above, it is necessary to provide a defect simulation structure of a closed gas insulated switchgear, which aims at the problem of simulating defects of the closed gas insulated switchgear.
A defect simulation structure of a closed gas insulated switchgear comprises a shell, a conductive body and a defect body, wherein the shell surrounds to form a first space. The first space is filled with an inert gas. The conductor is accommodated in the first space. The conductor is used for being electrically connected with a power supply. The defect body is accommodated in the first space.
In one embodiment, the conductive body and the surface of the shell close to the first space are arranged at intervals, the shell and the defect body are both made of metal materials, the shell is used for grounding the defect body and comprises a first end and a second end, the first end is fixed on the surface of the shell close to the first space, the second end is of a pointed structure, and the second end and the surface of the conductive body are arranged at intervals.
In one embodiment, the conductive body and the surface of the shell close to the first space are arranged at intervals, the shell and the defect body are both made of metal materials, the shell is used for grounding, the defect body is made of metal materials, the defect body comprises a first end and a second end which are opposite, the first end is fixed on the surface of the conductive body, the second end is of a pointed structure, and the second end and the surface of the shell close to the first space are arranged at intervals.
In one embodiment, the conductive body and the shell are arranged at an interval on the surface close to the first space, the shell and the defect body are both made of metal materials, the shell is used for grounding, the defect body is of a metal plate structure, the conductive body and the shell are respectively arranged at an interval on the defect body, and the conductive body and the shell are arranged at an interval on the surface close to the first space.
In one embodiment, the defect simulation structure of the enclosed gas insulated switchgear further comprises an insulating support. The defect body is connected with the surface of the shell close to the first space through the insulating support body.
In one embodiment, the housing is an insulator. The shell is provided with a first opening and a second opening. The electrical conductor includes a first guide plate, a first conductor, and a second guide plate. The first guide plate is buckled with the first opening. The first guide plate is connected with the positive pole of the power supply. The first conductor is arranged on the surface, close to the first space, of the first guide plate. The second guide plate is buckled with the second opening and used for grounding. The defect body is a metal particle, and the metal particle is accommodated in the first space.
In one embodiment, the first conductor is an electrode plate. The electrode plate is electrically connected to the surface of the first guide plate close to the first space, and a parallel magnetic field is formed between the electrode plate and the second guide plate.
In one embodiment, the housing is an insulator, the housing is opened with a first opening and a second opening, and the conductor includes: the first guide plate, the second guide plate, the first conductor, the second conductor and the insulator. The first guide plate is buckled with the first opening. The first guide plate is connected with the positive pole of the power supply. The second guide plate is buckled with the second opening. The second guide plate is used for grounding. The first conductor and the second conductor are arranged oppositely at intervals. The first conductor is arranged on the surface, close to the first space, of the first guide plate. The second conductor is arranged on the surface, close to the first space, of the second guide plate. The insulator is fixedly connected between the first conductor and the second conductor. The insulator contains air bubbles, and the air bubbles are the defect bodies.
In one embodiment, the insulator is a plate-like structure. The first conductor and the second conductor are respectively connected with two surfaces opposite to the insulator.
In one embodiment, the insulator is bonded between the first conductor and the second conductor by epoxy glue.
In one embodiment, the electrical conductor is spaced from a surface of the housing proximate the first space. The shell and the defect body are both made of metal materials. The housing is used for grounding. The defect simulation structure of the closed gas insulated switchgear further comprises an insulator. The insulator is connected between a surface of the electrical conductor and a surface of the housing proximate the first space. The defect body is made of semiconductor materials and is arranged on the surface of the insulator.
In one embodiment, the defect body is a ring structure, a band structure or a multi-sheet structure.
The defect simulation structure of the closed gas insulated switchgear provided by the embodiment of the application comprises a shell, a conductor and a defect body. The housing encloses a first space. The first space is filled with an inert gas. The conductor is accommodated in the first space. The conductor is used for being electrically connected with a power supply. The defect body is accommodated in the first space. The electrical property of the defect simulation structure of the defect body in the closed gas insulation combined electrical apparatus is the same as that of the defect in the closed gas insulation combined electrical apparatus, so that the defect simulation structure of the closed gas insulation combined electrical apparatus can simulate the structure of the closed gas insulation combined electrical apparatus, and an experimental model is provided for timely finding the defect of the closed gas insulation combined electrical apparatus.
Drawings
Fig. 1 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in an embodiment of the present application;
fig. 2 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in an embodiment of the present application;
fig. 3 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 4 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 5 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 6 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 7 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 8 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 9 is a sectional view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 10 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 11 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application;
fig. 12 is a side view of a defect simulation structure of the enclosed gas insulated switchgear provided in another embodiment of the present application.
Reference numerals:
Insulating support 50
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is capable of embodiments in many different forms than those described herein and those skilled in the art will be able to make similar modifications without departing from the spirit of the application and it is therefore not intended to be limited to the embodiments disclosed below.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1, a defect simulation structure 10 of a closed gas insulated switchgear includes a housing 20, a conductive body 30, and a defect body 40, wherein the housing 20 forms a first space 210. The first space 210 is used for filling with an inert gas. The conductor 30 is accommodated in the first space 210. The electrical conductor 30 is used for electrical connection to a power source. The defect body 40 is received in the first space 210. The defect body 40 is used for simulating defects inside the closed gas insulated switchgear.
The shell 20 is used for simulating the shell structure of the defect simulation structure 10 of the closed gas insulated switchgear. When defects inside the enclosed gas insulated switchgear are charged, aging and damage of the enclosed gas insulated switchgear are accelerated.
The defect simulation structure 10 of the enclosed gas insulated switchgear provided in the embodiment of the present application is used for simulating a defect structure in the enclosed gas insulated switchgear. According to different relative positions of the conductor 30 and the defect body 40, the defect simulation structure 10 of the closed gas insulated switchgear is used for simulating a metal protrusion defect, a metal suspension potential defect, a free metal particle defect, an air bubble defect inside an insulator and a dirt defect on the surface of the insulator.
Referring to fig. 2, in an embodiment, the conductive body 30 and the shell 20 are disposed at a distance from a surface of the shell 20 close to the first space 210, the shell 20 and the defect body 40 are both made of a metal material, the shell 20 is configured to be grounded to the defect body 40 and includes a first end 401 and a second end 402 opposite to each other, the first end 401 is fixed to the surface of the shell 20 close to the first space 210, the second end 402 is a pointed structure, and the second end 402 is disposed at a distance from the surface of the conductive body 30. The above described embodiments are used to simulate metal overhang defects on high voltage conductors.
Metal spikes can form on the surface of the metal due to poor machining, mechanical damage or scratching during assembly. The tip of the metal spike protrudes. In the enclosed gas-insulated switchgear, a region of high field strength in the insulating gas is formed, resulting in the generation of partial discharges.
The electrical conductor 30 is used to simulate a high voltage electrical conductor. The defect body 40 is used to simulate a metal spike. Metal overhang defects are susceptible to corona discharge. Metal overhang defects are prone to dielectric breakdown under operating or surge voltages.
Referring to fig. 3 and 4, in an embodiment, the conductive body 30 and the shell 20 are disposed at a distance from a surface of the shell 20 close to the first space 210, the shell 20 and the defect body 40 are both made of a metal material, the shell 20 is used for grounding, the defect body 40 is made of a metal material, the defect body 40 includes a first end 401 and a second end 402 opposite to each other, the first end 401 is fixed to the surface of the conductive body 30, the second end 402 is in a spike structure, and the second end 402 is disposed at a distance from a surface of the shell 20 close to the first space 210. The above embodiment is used for simulating the metal protrusion on the wall of the defect simulation structure 10 of the enclosed gas insulated switchgear.
Referring to fig. 5 and 6, in an embodiment, the conductive body 30 and the housing 20 are disposed at an interval on a surface close to the first space 210, the housing 20 and the defect body 40 are both made of a metal material, the housing 20 is used for grounding, the defect body 40 is a metal plate structure, the conductive body 30 and the housing 20 are disposed at an interval on the defect body 40, respectively, and the conductive body 30 is disposed at an interval on a surface close to the first space 210 from the housing 20. The embodiment is used for simulating the metal suspension potential defect in the closed gas insulated switchgear.
In the enclosed gas insulated switchgear, an electrostatic shield is widely used to control the electric field intensity in a dangerous area. The electric field connection between the shielding electrode and the high voltage conductor or the ground conductor is usually a light load contact. In actual operation, some metal components used to modify the electric field do not pass a load current. These components often use spring contacts made of aluminum for making electrical connections to the housing or to the high voltage conductor. The metal parts are in poor contact due to aging or loosening during operation, and a potential floating electrode is formed. The potential of these poorly contacted metal parts depends on the coupling capacitance between it and the conductor. The partial discharge amount caused by the charging capacitance formed by most potential floating electrodes is over 1000pC, and strong electric and acoustic signals can be generated, and the discharge repetition rate is high. The minute gap between the metal part and the housing or the high voltage conductor is easily broken.
The defect body 40 is a metal plate structure used to simulate a metal part with poor contact. The conductor 30 is used for simulating a conductor inside the closed gas insulated switchgear.
In one embodiment, the defect simulation structure 10 of the enclosed gas insulated switchgear further includes an insulating support 50. The defect body 40 is connected to the surface of the housing 20 near the first space 210 through the insulating support 50. In one embodiment, the defect body 40 is an aluminum sheet. The length of the insulating support 50 is fixed so that the distance between the aluminum sheet and the conductor 30 is fixed. The distance between the aluminum sheet and the conductor 30 meets the requirement of avoiding flashover along the surface.
When the voltage difference between the aluminum sheet and the conductor 30 exceeds the voltage that can be borne by the air gap between the aluminum sheet and the conductor, discharge occurs, and the electric devices of the enclosed gas insulated switchgear are damaged.
Referring also to fig. 7, in one embodiment, the housing 20 is an insulator. The housing 20 defines a first opening 201 and a second opening 202. The conductive body 30 includes a first guide plate 310, a first conductor 320, and a second guide plate 330. The first guide plate 310 is fastened to the first opening 201. The first guide plate 310 is connected to the positive electrode of the power supply. The first conductor 320 is disposed on a surface of the first guide plate 310 near the first space 210. The second conductive plate 330 is fastened to the second opening 202, and the second conductive plate 330 is used for grounding. The defect body 40 is a metal particle, and the metal particle is received in the first space 210. The above example was used to simulate free metal particle defects.
In one embodiment, the first conductor 320 includes an electrode plate. The electrode plate is electrically connected to a surface of the first guide plate 310 near the first space 210. A bipolar plate is formed between the electrode plate and the second guide plate 330. Parallel magnetic fields are formed between the bipolar plates. The above example was used to simulate free metal particle defects. When the voltage between the bipolar plates exceeds a certain value, the metal particles can jump between the grounded housing and the high-voltage conductor, so that partial discharges occur. The diameter of the metal particles is 0.2mm-2 mm.
Free metal particles are the most common defects in the closed gas-insulated switchgear and are also the main cause of failure, and account for a large proportion in the investigation of equipment discharge accidents. Free metal particles are metal debris resulting from friction between parts caused by field installation, mechanical vibration during transportation, impact shock caused by motion of moving parts, and chip detachment caused by electrical discharge. The metal chips have various shapes such as slender lines, spiral lines, spheres, powder and the like. In addition, the field installation condition is not as excellent as the production factory, and the particles and foreign matters in the closed gas insulated switchgear cannot be thoroughly removed. In addition, the switch contact acts and some substances inside the equipment are decomposed to generate free metal particles.
The free metal particles in the closed gas-insulated switchgear acquire charges and move under the action of voltage. When the voltage exceeds a certain value, the particles can jump between the grounded shell and the high-voltage conductor, and partial discharge occurs. The movement characteristics of the particles depend on the material, shape, etc. of the particles. And partial discharges are more likely to occur when the particles are close to but not touching the high voltage conductor.
Referring to fig. 8, in one embodiment, the outer shell 20 is an insulator, the outer shell 20 is opened with a first opening 201 and a second opening 202, and the conductive body 30 includes a first guide plate 310, a second guide plate 330, a first conductor 320, a second conductor 340, and an insulator 60. The first guide plate 310 is fastened to the first opening 201. The first guide plate 310 is connected to the positive electrode of the power supply. The second guide plate 330 is fastened to the second opening 202. The second conductive plate 330 is used for grounding. The first conductor 320 and the second conductor 340 are oppositely arranged at intervals. The first conductor 320 is disposed on a surface of the first guide plate 310 near the first space 210. The second conductor 340 is disposed on a surface of the second guide plate 330 near the first space 210. The insulator 60 is fixedly connected between the first conductor 320 and the second conductor 340. The insulator 60 contains a bubble, which is the defect body 40. The embodiment is used for simulating the bubble defect in the insulator.
In one embodiment, the insulator 60 is a plate-like structure. The first conductor 320 and the second conductor 340 are connected to two surfaces of the insulator 60 opposite to each other.
In one embodiment, the insulator 60 is bonded between the first conductor 320 and the second conductor 340 by epoxy.
The air gap or bubble defect inevitably exists in the basin-type insulator of the closed gas insulated switchgear. When the air gap or bubble defect edge field strength reaches a certain value, partial discharge occurs. Such discharges do not immediately form a through channel, but long-term partial discharges can lead to deterioration and progressive damage of the insulation (particularly of the organic medium), and even to breakdown or flashover along the entire insulation.
The first guide plate 310 and the second conductor 340 are copper plate electrodes. The insulator 60 is an epoxy insulator plate. Epoxy glue is coated between the electrode and the insulating plate to ensure that the electrode and the insulating plate are in full contact without air gaps, and SF6 gas with 0.45MPa is filled in the electrode and the insulating plate. The diameters of the bubbles are respectively 1mm-2 mm.
Referring also to fig. 9, in one embodiment, the conductive body 30 is spaced apart from the surface of the housing 20 adjacent to the first space 210. The housing 20 and the defect body 40 are both made of a metal material. The housing 20 is used for grounding. The defect simulation structure of the enclosed gas insulated switchgear further includes an insulator 60. The insulator 60 is connected between the surface of the conductor 30 and the surface of the housing 20 near the first space 210. The defect body 40 is made of a semiconductor material and is disposed on a surface of the insulator 60. The embodiment is used for simulating the pollution defect on the surface of the insulator.
In the operation process of the closed gas insulation combined electrical apparatus, sulfur-containing gas is volatilized from organic matters such as rubber in the cavity due to the influence of factors such as electricity and heat. The gas reacts with the guide bar, the electrically connected silver coating, etc. to produce a semiconductor material. The semiconductor substance moves in the air chamber in powder form and is attached to the basin-type insulator, and the quantity is accumulated to a certain degree to cause electric field distortion and further cause partial discharge, even breakdown accidents. The insulator 60 is used to simulate a basin insulator. The defect body 40 is used to simulate powdered semiconductor material. The semiconductor material is semiconductor glue or Ag2S and the like.
Referring to fig. 10, 11 and 12, in one embodiment, the defect body 40 is a ring structure, a band structure or a multi-sheet structure to characterize the semiconductor dust of different structures.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-described examples merely represent several embodiments of the present application and are not to be construed as limiting the scope of the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (12)
1. A defect simulation structure of a closed gas insulated switchgear, comprising:
a housing (20) defining a first space (210), said first space (210) being for filling with an inert gas;
a conductor (30) housed in the first space (210), the conductor (30) being electrically connected to a power source; and
and a defect body (40) accommodated in the first space (210), wherein the defect body (40) is used for simulating a defect inside the closed gas insulated switchgear.
2. The defect simulation structure of the enclosed gas insulated switchgear according to claim 1, wherein the conductive body (30) is spaced from the surface of the housing (20) near the first space (210), the housing (20) and the defect body (40) are both made of metal materials, the housing (20) is used for grounding the defect body (40) and comprises a first end (401) and a second end (402), the first end (401) is fixed to the surface of the housing (20) near the first space (210), the second end (402) is of a spike structure, and the second end (402) is spaced from the surface of the conductive body (30).
3. The defect simulation structure of the enclosed gas insulated switchgear according to claim 1, wherein the conductive body (30) is spaced from the surface of the housing (20) near the first space (210), the housing (20) and the defect body (40) are both made of metal materials, the housing (20) is used for grounding, the defect body (40) is made of metal materials, the defect body (40) comprises a first end (401) and a second end (402) which are opposite to each other, the first end (401) is fixed on the surface of the conductive body (30), the second end (402) is of a spike structure, and the second end (402) is spaced from the surface of the housing (20) near the first space (210).
4. The defect simulation structure of a closed gas insulated switchgear according to claim 1, wherein the conductive body (30) is disposed at a distance from the surface of the housing (20) near the first space (210), the housing (20) and the defect body (40) are both made of metal materials, the housing (20) is used for grounding, the defect body (40) is made of metal plate, the conductive body (30) and the housing (20) are disposed at a distance from the defect body (40), respectively, and the conductive body (30) is disposed at a distance from the surface of the housing (20) near the first space (210).
5. The defect simulation structure of a closed gas insulated switchgear according to claim 4, wherein the defect simulation structure of a closed gas insulated switchgear further comprises:
an insulating support (50), wherein the defect body (40) is connected with the surface of the shell (20) close to the first space (210) through the insulating support (50).
6. The defect simulation structure of the enclosed gas insulated switchgear according to claim 1, wherein the outer case (20) is an insulator, the outer case (20) is opened with a first opening (201) and a second opening (202), and the conductor (30) comprises:
the first guide plate (310) is buckled with the first opening (201), and the first guide plate (310) is connected with a positive electrode of a power supply;
a first conductor (320) disposed on a surface of the first guide plate (310) near the first space (210);
a second guide plate (330), wherein the second guide plate (330) is fastened to the second opening (202), and the second guide plate (330) is used for grounding;
the defect body (40) is a metal particle, and the metal particle is received in the first space (210).
7. The defect simulation structure of the enclosed gas insulated switchgear according to claim 6, wherein the first conductor (320) comprises an electrode plate (321), the electrode plate (321) is electrically connected to the surface of the first guide plate (310) near the first space (210), and a parallel magnetic field is formed between the electrode plate (321) and the second guide plate (330).
8. The defect simulation structure of the enclosed gas insulated switchgear according to claim 6, wherein the outer case (20) is an insulator, the outer case (20) is opened with a first opening (201) and a second opening (202) in opposition, and the conductor (30) comprises:
the first guide plate (310) is buckled with the first opening (201), and the first guide plate (310) is connected with a positive electrode of a power supply;
a second guide plate (330), wherein the second guide plate (330) is fastened to the second opening (202), and the second guide plate (330) is used for grounding;
a first conductor (320) and a second conductor (340) which are arranged oppositely at intervals, wherein the first conductor (320) is arranged on the surface of the first guide plate (310) close to the first space (210), and the second conductor (340) is arranged on the surface of the second guide plate (330) close to the first space (210);
and the insulator (60) is fixedly connected between the first conductor (320) and the second conductor (340), and bubbles are contained in the insulator (60), namely the defect body (40).
9. The defect simulation structure of a closed gas insulated switchgear according to claim 8, wherein the insulator (60) is a plate-shaped structure, and the first conductor (320) and the second conductor (340) are connected to both surfaces of the insulator (60) opposite to each other, respectively.
10. The defect simulation structure of a closed gas-insulated switchgear according to claim 8, characterized in that the insulator (60) is bonded between the first conductor (320) and the second conductor (340) by epoxy glue.
11. The defect simulation structure of a closed gas insulated switchgear according to claim 1, wherein the conductive body (30) is disposed at a distance from a surface of the housing (20) near the first space (210), the housing (20) and the defect body (40) are both made of a metal material, the housing (20) is used for grounding, and the defect simulation structure (10) of a closed gas insulated switchgear further comprises:
an insulator (60) connected between a surface of the conductor (30) and a surface of the housing (20) near the first space (210);
the defect body (40) is made of a semiconductor material and is arranged on the surface of the insulator (60).
12. The defect simulating structure of the enclosed gas insulated switchgear according to claim 11, wherein the defect body (40) is a ring structure, a band structure or a multi-sheet structure.
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