CN110819940A - Evaporation plating mechanism - Google Patents
Evaporation plating mechanism Download PDFInfo
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- CN110819940A CN110819940A CN201911201896.9A CN201911201896A CN110819940A CN 110819940 A CN110819940 A CN 110819940A CN 201911201896 A CN201911201896 A CN 201911201896A CN 110819940 A CN110819940 A CN 110819940A
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- crucible
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- plate
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- 238000001704 evaporation Methods 0.000 title claims abstract description 43
- 230000008020 evaporation Effects 0.000 title claims abstract description 40
- 230000007246 mechanism Effects 0.000 title claims abstract description 33
- 238000007747 plating Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000006185 dispersion Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000000428 dust Substances 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 7
- 238000005507 spraying Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an evaporation mechanism which comprises a crucible and a dustproof device, wherein the crucible is arranged above the dustproof device, evaporation materials are filled in the crucible, a heating device is coated on the outer wall of the crucible, a porous dispersion plate is arranged in the middle of the crucible, a nozzle for spraying vapor of the evaporation materials is arranged on the side wall of the upper part of the crucible, the nozzle is communicated with the inside of the crucible, the nozzle is obliquely and downwards directed to a substrate placing platform on one side below the dustproof device, the bottom surface of the substrate placing platform is a plane, and the substrate placing platform is used for sequentially placing a mask plate and a substrate to be evaporated from top to bottom. The scheme adopts an evaporation mode that the substrate is arranged below and the evaporation mechanism is arranged above, and the substrate is integrally supported by the substrate placing platform to avoid the bending of the substrate, so that the limitation of the bending on the thickness and the size of the substrate is avoided; meanwhile, the particles can be effectively prevented from falling through the dustproof device, so that the mask plate is prevented from being plugged.
Description
Technical Field
The invention relates to the technical field of evaporation equipment, in particular to an evaporation mechanism.
Background
Since the invention of Organic Light-Emitting diodes (OLEDs), the OLEDs are drawing attention in the industry, and have been widely used in the display field due to their characteristics of being Light, thin, flexible, etc. after decades of development, and are the most promising display technology.
The core of an OLED is composed of a plurality of organic layers of different functions, the thickness of which is generally within the rangeToIn between, the thickness of each layer must be precisely controlled; currently, the physical vapor deposition method is the mainstream technique for manufacturing an organic layer: the organic material is heated in a vacuum cavity, so that the material is gasified or sublimated and deposited on a substrate with a lower temperature, and the OLED device with the multilayer film is formed.
The common method is as follows: the substrate is arranged at the upper part of the vacuum cavity, the film coating surface faces downwards, the crucible containing the organic material is arranged at the lower part of the cavity, and the organic material is heated, sublimated or gasified in the crucible and deposited on the substrate; because the thickness of the substrate is generally within 1mm, the coated surface faces downwards, the substrate can only be supported in a non-coated area at the boundary of the substrate, and a coated area in the middle of the substrate cannot be supported, the substrate is easy to bend under the action of gravity; in order to reduce the bending of the substrate, the size of the substrate must be controlled and the thickness thereof must be maintained to be relatively thick, which limits the improvement of the production efficiency and the cost saving.
Disclosure of Invention
Therefore, an evaporation mechanism needs to be provided to solve the problem that the existing evaporation mechanism needs a thick substrate.
For realizing above-mentioned purpose, the inventor provides an evaporation coating mechanism, including crucible and dust keeper, the crucible is arranged in the dust keeper top, the inside evaporation coating material that is used for filling of crucible, crucible outer wall cladding are provided with heating device, and the crucible middle part is provided with porous dispersion board, and crucible upper portion lateral wall is provided with and supplies evaporation coating material steam spun nozzle, the inside intercommunication of nozzle and crucible, the downward directional base plate place the platform in one side of dust keeper below of nozzle slope, base plate place the platform's bottom surface is the plane, and base plate place the platform is used for from top to bottom placing the mask plate in proper order and treating the base plate of evaporation coating by vaporization.
Further, dust keeper includes bottom plate and dust guard, and the dust guard sets up on the bottom plate, and the dust guard is provided with the perk portion in the nozzle side, the nozzle is in crucible side edge, perk portion edge, bottom plate edge in the nozzle side for setting gradually outward by the center in vertical direction, the bottom plate is in the nozzle in the edge of nozzle side in the crucible side edge with the below of perk portion edge line.
Further, the edge of the bottom plate on the side of the nozzle and the edge of the tilting part are spaced by more than one centimeter in the vertical direction.
Further, the distance between the side edge of the nozzle and the edge of the tilting part in the vertical direction is more than one centimeter.
Further, the nozzle is a plurality of, and a plurality of nozzles are placed on the same horizontal plane.
Further, still include horizontal reciprocating motion mechanism, horizontal reciprocating motion mechanism is used for driving crucible and dust keeper at base plate place the platform top reciprocating motion, perhaps: the horizontal reciprocating mechanism is used for driving the substrate placing platform to reciprocate below the crucible and the dustproof device.
Further, the crucible is a linear evaporation source crucible.
Further, the porous dispersion plate is made of a high-temperature resistant metal material or alloy.
Further, the dust-proof device is made of a high-temperature-resistant metal material or alloy.
Different from the prior art, the technical scheme adopts an evaporation mode that the substrate is arranged below and the evaporation mechanism is arranged above, and the substrate is integrally supported by the substrate placing platform to avoid bending of the substrate, so that the limitation of the bending on the thickness and the size of the substrate is avoided; meanwhile, the particles can be effectively prevented from falling through the dustproof device, so that the mask plate is prevented from being plugged.
Drawings
FIG. 1 is a schematic structural diagram of a general evaporation method before improvement;
fig. 2 is a schematic view of an evaporation mechanism according to an embodiment of the present invention;
FIG. 3 is a schematic view of the position of the crucible and the dust-proof device according to the embodiment of the present invention.
Description of reference numerals:
100. a substrate before modification; 101. A substrate support before modification; 102. A crucible before improvement;
201. a nozzle; 202. A heating device; 203. Evaporating a material;
204. a porous dispersion plate; 206. A dust-proof device; 2061. A dust-proof plate;
2062. a base plate; 2063. 2064 is a raised portion at the dust guard boundary;
207. vapor of the evaporation material; 208/209/210, boundary of vapor during vapor deposition;
211. a crucible; 212. A substrate placement platform movement direction;
213. the movement direction of the crucible and the dustproof device; 301. A substrate placement stage;
302. a substrate on the substrate placement stage; 303. A mask plate;
401/406, is the boundary of the dust-proof board in the vertical direction;
402/405, is the boundary of the bottom plate in the vertical direction;
403/404, is the boundary of the crucible in the vertical direction.
Detailed Description
To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.
Referring to fig. 1, the prior art before improvement generally adopts a mode that a substrate 100 is arranged above and a crucible 102 of an evaporation source is arranged below during evaporation; since the substrate is supported by the substrate holder 101 only in the edge non-deposition region and has no support structure in the middle, the substrate is inevitably bent. The larger the substrate size, the thinner the substrate thickness, and the larger the bending; the bending limits the size and thickness of the substrate, which is detrimental to the cost savings of the increased production efficiency.
Referring to fig. 2, the present invention provides a new evaporation mechanism, which is characterized in that the substrate is at the lower part and the evaporation mechanism is above the substrate, and the evaporation mechanism should be arranged in a vacuum chamber. The deposition mechanism mainly includes a crucible 211, which is preferably a linear evaporation source crucible, and a dust-proof device 206. A substrate is placed on the substrate placing table 301, and a mask plate 303 is placed on the substrate 302. Inside the crucible 211 is the evaporation material (such as organic material) 203, and outside the crucible 211 is the heating device 202, which is coated on the crucible to realize the heating of the whole crucible. 204 are internal porous dispersion plates capable of uniformly ejecting vapor of the deposition material, and the porous dispersion plates 204 are generally made of a metal material or an alloy (titanium, aluminum, iron, copper, etc.) resistant to high temperatures (> 500 deg.c). The crucible 211 has one or more nozzles 201 (gas outlet holes) for discharging vapor of the vapor deposition material. The lower part of the deposition mechanism is a dust-proof device 206, and the dust-proof device 206 is generally made of a metal material or an alloy (titanium, aluminum, iron, copper, etc.) resistant to high temperatures (> 500 ℃). The dustproof device realizes shielding of steam and avoids steam evaporation from being applied to the substrate placing platform. The area of the dust guard should be larger than the area of the crucible and nozzle and may be a single plate. Alternatively, in some embodiments, the dust-proof device 206 is composed of two parts, namely, a dust-proof plate 2061 and a bottom plate 2062, wherein the dust-proof plate 2061 is arranged above the bottom plate 2062 with a certain gap therebetween; the dust-proof plate 2061 has raised portions 2063 and 2064 at its edge, and the raised portion 2063 is a raised portion on the side close to the nozzle. And referring to fig. 2, 301 is a substrate placing stage at the bottom of the chamber, 302 is a substrate placed on the stage, and 303 is a mask plate on 302.
When the invention is used, the substrate 302 can be flatly placed on the bottom surface of the substrate placing platform 301, and the film coating surface of the substrate faces upwards. Because the coating surface is upward, the back surface of the substrate can be supported by a plane, the substrate can not be bent, the substrate and the mask plate can be better attached together, the substrate is not limited by the size and the thickness, and a thicker substrate is not needed. And then the nozzle arranged downwards on the crucible can evaporate the steam onto the substrate from top to bottom during evaporation, so that evaporation is completed.
Referring to fig. 2, the heating device 202 heats the evaporation material 203, the evaporation material 203 is vaporized to form vapor 207, and the vapor 207 is ejected from the nozzle 201 at a certain angle, and the height and angle of the tilted portion 2063 are designed appropriately, so that the vapor 207 of the evaporation material is prevented from being evaporated on the bottom plate 2062. 208/209/210 is a schematic boundary diagram for steam formation.
Referring to fig. 2, the dust-proof plate 2061 is above, the vapor 207 can be evaporated on the dust-proof plate 2061, particles are easily generated on the dust-proof plate 2061 along with the accumulation of the vapor 207 on the dust-proof plate 2061, the generated particles are easy to fall off, and if the particles fall onto the mask plate 303, holes can be plugged into the mask plate, so that point defects are caused; to improve particle fall off, a bottom plate 2062 is added; the vapor 207 cannot be directly evaporated on the bottom plate 2062 due to the shielding of the dust-proof plate 2061, so that the bottom plate 2062 can be kept in a clean state, thereby preventing particles from falling.
As shown in fig. 3, broken lines 401, 402, 403, 404, 405, and 406 are schematic views showing the positions of the boundaries (edges) of the crucible 211, the dust-proof plate 2061, and the bottom plate 2062 in the vertical direction; 401 and 406 are the boundaries of the bottom plate 2062, 402 and 405 are the boundaries of the dust- proof plate 2061, and 403 and 404 are the boundaries of the crucible 211 and the nozzle 201. 401 is on the right side of 402 and the distance between the two is more than 1cm, which can ensure that the particles on the bottom plate 2062 fall on the dust-proof plate 2061 and cannot fall on the mask plate 303; by properly designing the height and angle of the raised portion 2063 and the distance between 402 and 403, it can be ensured that the dust-proof plate 2061 blocks the material vapor 207 and the bottom plate 2062 is not plated with the material; 402 to the right of 403 and at a distance above 1cm, particles falling from the crucible 211 may be blocked by the dust shield 2061 and do not fall onto the bottom plate 2062; the other side is also similar in principle, and 404, 405 and 406 are sequentially from right to left, and the interval is more than 1 cm. With the above arrangement, it can be ensured that: the bottom plate 2062 is not coated with the vapor 207, and particles falling from the crucible can only fall on the dust-proof plate 2061, so that the bottom plate 2062 is kept clean; the bottom plate 2062 remains clean and the chance of particles falling onto the mask 303 is greatly reduced. Therefore, the particles can be effectively prevented from dropping on the mask plate (the dropping particles can block holes on the mask plate to cause point defects).
Referring to fig. 2, in order to achieve uniform evaporation, either the evaporation mechanism or the substrate must make a reciprocating motion; 212 is the movement direction of the substrate placing tables 301, 302, 303, and 213 is the movement direction of the evaporation mechanism (crucible and dust-proof device); as long as one of the two can realize reciprocating motion, uniform evaporation of the material can be realized. In the embodiment that the nozzle is provided with a plurality of nozzles, the nozzles are preferably positioned on a straight line, and the direction of the reciprocating motion is preferably perpendicular to the direction of the straight line of the nozzles, so that the evaporation on a square plane can be realized. When the reciprocating motion is realized through a reciprocating motion mechanism (such as an electric rail), the boundary of the nozzle steam is in the plane of the substrate, so as to avoid evaporating the structure outside the substrate.
It should be noted that, although the above embodiments have been described herein, the invention is not limited thereto. Therefore, based on the innovative concepts of the present invention, the technical solutions of the present invention can be directly or indirectly applied to other related technical fields by making changes and modifications to the embodiments described herein, or by using equivalent structures or equivalent processes performed in the content of the present specification and the attached drawings, which are included in the scope of the present patent.
Claims (9)
1. An evaporation coating mechanism, its characterized in that: including crucible and dust keeper, the crucible is arranged in the dust keeper top, the inside coating by vaporization material that is used for filling of crucible, crucible outer wall cladding are provided with heating device, and the crucible middle part is provided with porous dispersion board, and crucible upper portion lateral wall is provided with and supplies coating by vaporization material steam spun nozzle, the inside intercommunication of nozzle and crucible, the base plate place the platform of nozzle slope directional below one side in dust keeper below downwards, base plate place the platform's bottom surface is the plane, and base plate place the platform is used for from top to bottom placing the mask plate in proper order and treating the base plate of coating by vaporization.
2. A vapor deposition mechanism according to claim 1, wherein: the dustproof device comprises a bottom plate and a dustproof plate, the dustproof plate is arranged on the bottom plate, the dustproof plate is provided with a tilting part on the side of the nozzle, the nozzle is arranged on the edge of the side edge of the crucible, the edge of the tilting part and the edge of the bottom plate on the side of the nozzle in the vertical direction and sequentially arranged from the center to the outside, and the bottom plate is arranged below the edge connecting line of the nozzle on the side edge of the crucible and the edge of the tilting part at the edge of the nozzle.
3. A vapor deposition mechanism according to claim 2, wherein: the distance between the edge of the bottom plate on the nozzle side and the edge of the tilting part in the vertical direction is more than one centimeter.
4. A vapor deposition mechanism according to claim 2, wherein: the distance between the nozzle and the edge of the tilting part on the side edge of the crucible in the vertical direction is more than one centimeter.
5. A vapor deposition mechanism according to claim 1, wherein: the nozzle is a plurality of, and a plurality of nozzles are arranged on same horizontal plane.
6. A vapor deposition mechanism according to claim 1, wherein: still include horizontal reciprocating motion mechanism, horizontal reciprocating motion mechanism is used for driving crucible and dust keeper at base plate place the platform top reciprocating motion, perhaps: the horizontal reciprocating mechanism is used for driving the substrate placing platform to reciprocate below the crucible and the dustproof device.
7. A vapor deposition mechanism according to any one of claims 1 to 6, wherein: the crucible is a linear evaporation source crucible.
8. A vapor deposition mechanism according to claim 1, wherein: the porous dispersion plate is made of a high-temperature-resistant metal material or alloy.
9. A vapor deposition mechanism according to claim 1, wherein: the dust-proof device is made of high-temperature resistant metal materials or alloys.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911201896.9A CN110819940B (en) | 2019-11-29 | 2019-11-29 | Evaporation mechanism |
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CN201911201896.9A CN110819940B (en) | 2019-11-29 | 2019-11-29 | Evaporation mechanism |
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CN110819940A true CN110819940A (en) | 2020-02-21 |
CN110819940B CN110819940B (en) | 2024-04-16 |
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Cited By (3)
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CN111334755A (en) * | 2020-03-18 | 2020-06-26 | 福建华佳彩有限公司 | Novel evaporation device |
CN111364007A (en) * | 2020-04-26 | 2020-07-03 | 昆明理工大学 | Method and device for vacuum evaporation of magnesium on surface of high-temperature-resistant particle |
CN115449756A (en) * | 2022-09-21 | 2022-12-09 | 京东方科技集团股份有限公司 | Evaporation plating device |
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CN111334755A (en) * | 2020-03-18 | 2020-06-26 | 福建华佳彩有限公司 | Novel evaporation device |
CN111334755B (en) * | 2020-03-18 | 2022-06-07 | 福建华佳彩有限公司 | Evaporation plating device |
CN111364007A (en) * | 2020-04-26 | 2020-07-03 | 昆明理工大学 | Method and device for vacuum evaporation of magnesium on surface of high-temperature-resistant particle |
CN111364007B (en) * | 2020-04-26 | 2021-09-28 | 昆明理工大学 | Method and device for vacuum evaporation of magnesium on surface of high-temperature-resistant particle |
CN115449756A (en) * | 2022-09-21 | 2022-12-09 | 京东方科技集团股份有限公司 | Evaporation plating device |
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