CN110797470A - Display device, display panel, light emitting device and method of manufacturing the same - Google Patents
Display device, display panel, light emitting device and method of manufacturing the same Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Abstract
The disclosure provides a display device, a display panel, a light-emitting device and a manufacturing method thereof, and relates to the technical field of display. The light emitting device comprises an anode layer, a cathode layer and a light emitting functional layer, wherein: a cathode layer disposed on one side of the anode layer; and the light emitting function layer is arranged between the anode layer and the cathode layer and comprises a light emitting layer, the light emitting layer is provided with a host material and an object material doped in the host material, and the doping proportion of the object material is reduced towards the anode layer in sequence. The light emitting device of the present disclosure can improve the light emitting efficiency on the cathode layer side, improve the RGB luminance difference, and further improve the color deviation at low temperature.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a display device, a display panel, a light emitting device, and a method for manufacturing the same.
Background
Organic Light Emitting Diodes (OLEDs) are widely used in display technology because of their advantages of being Light, thin, high in contrast, bendable, and short in response time.
A common organic electroluminescent device mainly includes an anode, a cathode, and an organic layer disposed between the cathode and the anode. When voltages are applied to the cathode and the anode, respectively, electrons on the cathode side and holes on the anode side simultaneously move to the organic layer under the action of an electric field, and combine to form excitons in the organic layer, and the excitons emit light to the outside in the process of releasing energy from an excited state to a ground state.
However, the conventional light emitting diode is sensitive to temperature, and at a low temperature, due to variation of RGB characteristics of the device, RGB brightness difference is caused, white balance is drifted, color cast is generated, and a display effect is poor.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
The present disclosure is directed to overcome the above-mentioned disadvantages of the prior art, and to provide a display device, a display panel, a light emitting device and a method for manufacturing the same, which can improve the light emitting efficiency on the cathode layer side, improve the RGB luminance difference, and further improve the color deviation at low temperature.
According to an aspect of the present disclosure, there is provided a light emitting device including:
an anode layer;
a cathode layer disposed on one side of the anode layer;
and the light emitting function layer is arranged between the anode layer and the cathode layer and comprises a light emitting layer, the light emitting layer is provided with a host material and an object material doped in the host material, and the doping proportion of the object material is sequentially reduced towards the anode layer.
In an exemplary embodiment of the present disclosure, a doping ratio of the guest material to the host material in the light emitting layer ranges from 0.5% to 10%.
In an exemplary embodiment of the present disclosure, the light emitting layer includes at least a first functional layer, a second functional layer, and a third functional layer, which are sequentially stacked, a host material of the second functional layer is the same as a host material of the first functional layer and a host material of the third functional layer, and guest materials are different from each other;
or the host material of the second functional layer is different from the host material of the first functional layer and the third functional layer, and the guest materials are the same.
In an exemplary embodiment of the present disclosure, the light emitting layer includes at least a first functional layer, a second functional layer, and a third functional layer, which are sequentially stacked, and a host material of the second functional layer is different from a host material of the first functional layer and a guest material of the third functional layer;
or the host material and the guest material of the first functional layer are respectively the same as the host material and the guest material of the third functional layer, and are different from the host material and the guest material of the second functional layer.
In an exemplary embodiment of the present disclosure, the material of the light emitting layer is a fluorescent material, and a doping ratio of a guest material to a host material of the fluorescent material includes 0.5% to 5%.
In an exemplary embodiment of the present disclosure, the thickness ranges of the first functional layer, the second functional layer, and the third functional layer all include 10nm to 50 nm.
In one exemplary embodiment of the present disclosure, the light emitting function layer further includes:
a hole injection layer disposed between the anode layer and the light emitting layer;
a hole transport layer disposed between the hole injection layer and the light emitting layer;
an electron transport layer disposed between the light emitting layer and the cathode layer;
and the electron injection layer is arranged between the electron transmission layer and the cathode layer.
According to an aspect of the present disclosure, there is provided a method of manufacturing a light emitting device, including:
forming an anode layer over a substrate;
forming a light-emitting functional layer on one side of the anode layer far away from the substrate; the light-emitting functional layer comprises a light-emitting layer, the light-emitting layer is provided with a host material and a guest material doped in the host material, and the doping proportion of the guest material is sequentially reduced towards the anode layer;
and forming a cathode layer on one side of the light-emitting function layer far away from the anode layer.
According to an aspect of the present disclosure, there is provided a display panel comprising a plurality of display elements arranged in an array, each of the display elements comprising a light emitting device as described in any one of the above.
According to an aspect of the present disclosure, there is provided a display device including the display panel of any one of the above.
The display device, the display panel, the light emitting device and the manufacturing method thereof can display images by applying voltage to the cathode layer and the anode layer to enable electrons and holes to emit light in a light emitting function layer in a recombination mode. In the process, as the doping proportion of the guest materials in the light-emitting layer is sequentially reduced towards the anode layer, the cathode layer side has higher doping concentration, so that the light-emitting efficiency of the cathode layer side can be improved, the RGB brightness difference is improved, and the color deviation at low temperature is further improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.
Fig. 1 is a schematic structural view of a light emitting device according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a light emitting device according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of carrier enrichment when the light emitting layer of the embodiment of the present disclosure is a triple layer.
Fig. 4 is a diagram illustrating the effect of temperature on the RGB of the device under a fixed voltage in the prior art.
Fig. 5 is a schematic diagram illustrating the effect of temperature on the RGB device at a fixed voltage according to an embodiment of the present disclosure.
Fig. 6 is a flowchart of a method of manufacturing a light emitting device according to an embodiment of the present disclosure.
In the figure: 1. a substrate; 2. an anode layer; 3. a light-emitting functional layer; 31. a first functional layer; 32 a second functional layer; 33. a third functional layer; 4. a cathode layer.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," and "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc. The terms "first," "second," and "third" are used merely as labels, and are not limiting as to the number of their objects.
The present disclosure provides a light emitting device, as shown in fig. 1, which may include an anode layer 2, a cathode layer 4, and a light emitting functional layer 3, wherein:
the cathode layer 4 may be disposed on one side of the anode layer 2;
the light emitting function layer 3 may be disposed between the anode layer 2 and the cathode layer 4, and may include a light emitting layer, and the light emitting layer may have a host material and a guest material doped in the host material, and the doping ratio of the guest material may be sequentially decreased toward the anode layer 2.
The light emitting device of the present disclosure can display an image by applying a voltage to the cathode layer 4 and the anode layer 2, so that electrons and holes are recombined to emit light in the light emitting functional layer 3. In this process, since the doping ratio of the guest material in the light emitting layer is sequentially decreased toward the anode layer 2, the cathode layer 4 side can have a higher doping concentration, so that the light emitting efficiency of the cathode layer 4 side can be improved, the RGB luminance difference can be improved, and the color deviation at a low temperature can be improved.
The following provides a detailed description of the respective portions of the light emitting device of the embodiments of the present disclosure:
the anode layer 2 may be a thin film formed on the substrate 1, and the substrate 1 may be a transparent substrate, a translucent substrate, or a light-shielding substrate, and may be a flexible substrate or a rigid substrate, and the type of the substrate 1 is not particularly limited. In an embodiment, the substrate 1 may be a transparent substrate, which may be glass, for example.
The material of the anode layer 2 may be a material which facilitates hole injection into the light emitting functional layer 3, and may be a metal, an alloy, a metal oxide or a combination thereof, for example, it may be copper, zinc, gold or an alloy thereof, may also be zinc oxide, Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), and may also be a combination of a metal and an oxide, for example, it may be ZnO: Al, SnO2Sb, of course, the material of the anode layer 2 may be other, and is not listed here. Preferably, the material of the anode layer 2 may be Indium Tin Oxide (ITO).
The cathode layer 4 may be provided on a side of the anode layer 2 remote from the substrate 1, and may be a thin film formed on a side of the anode layer 2 remote from the substrate 1. The anode layer 2 may be formed by vacuum evaporation, the anode layer 2 may be formed by chemical vapor deposition, coating, ink-jet, screen printing, or the like, and the anode layer 2 may be formed by other methods, which are not limited herein.
The cathode layer 4 may employ a material that facilitates electron injection into the light-emitting functional layer 3, and the material may have a small work function. For example, the material of the cathode layer 4 may be a metal or alloy material, for example, it may be magnesium, aluminum, silver, tin, lead or their alloys, or it may be a multi-layer material, such as: LiF/Al, Liq/Al, LiO2Al, LiF/Ca, LiF/Al and BaF2The material of the cathode layer 4 is not limited to this, and may be other materials, and is not listed here. Preferably, the material of the cathode layer 4 may be aluminum or magnesium.
The light-emitting functional layer 3 may be disposed between the anode layer 2 and the cathode layer 4, and may be a thin film formed on the surface of the anode layer 2 away from the substrate 1, and may have a thickness of 30nm to 150nm, for example, 30nm, 60nm, 90nm, 120nm, or 150nm, or of course, other thicknesses may be used, which are not listed here. The light-emitting functional layer 3 may be formed on the anode layer 2 by vacuum evaporation, coating, ink-jet, screen printing, or the like, and the light-emitting functional layer 3 may be one layer or a plurality of layers, which is not particularly limited herein. The film forming process may be selected according to the type of material and its chemical and physical properties.
The light emitting functional layer 3 may include at least a light emitting layer, and the light emitting layer may include a host material and a guest material doped in the host material, and may be a fluorescent material or a phosphorescent material, which is not limited herein. In one embodiment, the material of the light emitting layer may be an organic small molecule light emitting material, such as: oxadiazole and derivatives thereof, triazole and derivatives thereof, rhodamine and derivatives thereof, 1, 8-naphthalimide derivatives, pyrazoline derivatives, triphenylamine derivatives, porphyrin compounds, carbazole, pyrazine, thiazole derivatives or perylene derivatives and the like; and also organic high molecular materials such as: polyphenyl, polythiophene, polyfluorene, polytriphenylamine and derivatives thereof, polytriphenylamine, polycarbazole, polypyrrole, polyporphyrin and derivatives or copolymers thereof, and the like.
As shown in fig. 2 to 3, the carrier mobility is large at the normal temperature, the exciton recombination center is close to the anode, and when the temperature is lowered, the carrier mobility is reduced, the difference between the electron and the hole is reduced, and the recombination region is widened, where s is a curve of the carrier-enriched region at the normal temperature, and t is a curve of the carrier-enriched region at the low temperature. The light brightness and color can be adjusted by adjusting the type and concentration of the material in the light-emitting layer and further adjusting the ratio of RGB light emission in the light-emitting layer, and the brightness of RGB before and after adjustment is shown in fig. 4 and 5. The light emitting layer can comprise a plurality of layers, the doping proportion of the object materials in each layer can be sequentially reduced towards the anode layer 2, so that the cathode layer 4 side has higher doping proportion, the exciton recombination center can be increased, more places are provided for exciton recombination, the light emitting efficiency of the cathode layer 4 side can be improved, the RGB brightness difference of the cathode layer 4 side is improved, and the color deviation at low temperature is improved.
For example, the light emitting layer may include 2, 3, 4, 5, or 6 layers, and may further include more layers as long as the doping ratio of the guest material in each layer decreases toward the anode layer 2, and the number of layers in the light emitting layer is not particularly limited. The thickness of each layer in the light-emitting layer may be 10nm to 50nm, for example, the thickness of each layer in the light-emitting layer may be 10nm, 20nm, 30nm, 40nm or 50nm, and of course, other thicknesses may be possible, which is not particularly limited herein.
In one embodiment, as shown in fig. 1 and 3, the light emitting layer may include at least a first functional layer 31, a second functional layer 32, and a third functional layer 33, which are sequentially stacked, and the first functional layer 31 may be located between the second functional layer 32 and the anode layer 2, and the third functional layer 33 may be located between the second functional layer 32 and the cathode layer 4. The thicknesses of the first functional layer 31, the second functional layer 32, and the third functional layer 33 may be the same or different. For example, the thicknesses of the first functional layer 31, the second functional layer 32, and the third functional layer 33 may be 10nm, 30nm, and 50nm, respectively. In one embodiment, the thicknesses of the first functional layer 31, the second functional layer 32 and the third functional layer 33 are all different, for example, the thickness of the first functional layer 31 may be 10nm, the thickness of the second functional layer 32 may be 30nm, and the thickness of the third functional layer 33 may be 50 nm. Of course, the thicknesses of any two of the first functional layer 31, the second functional layer 32, and the third functional layer 33 may be equal, and are not particularly limited herein.
The first functional layer 31, the second functional layer 32, and the third functional layer 33 may be sequentially formed by vacuum evaporation, chemical vapor deposition, coating, screen printing, or the like, but the first functional layer 31, the second functional layer 32, and the third functional layer 33 may be formed by other methods, which is not particularly limited herein. It should be noted that the doping ratio of the guest material of the first functional layer 31 may be smaller than the doping ratio of the guest material of the second functional layer 32, and meanwhile, the doping ratio of the guest material of the second functional layer 32 may be smaller than the doping ratio of the guest material of the third functional layer 33.
The doping ratio of the guest material to the host material in the light-emitting layer may range from 0.5% to 10%, for example, it may be 0.5%, 1%, 3%, 5%, 7%, 9%, or 10%. The doping ratio may be selected according to the types of the host material and the guest material, and is not particularly limited herein. For example, the material of the light emitting layer may be a fluorescent material, the guest material may be a blue light material, and the doping ratio of the blue light material to the host material may include 0.5% to 5%, for example, it may be 0.5%, 1%, 2%, 3%, 4%, or 5%, and of course, other doping ratios may also be used, which are not listed here.
In one embodiment, the host material of the second functional layer 32 and the host material of the first functional layer 31 and the third functional layer 33 may be the same, and the guest materials may be different from each other. Alternatively, the host material of the second functional layer 32 and the host materials of the first functional layer 31 and the third functional layer 33 may be different from each other, and the guest materials may be the same.
In another embodiment, the host material of the second functional layer 32 may be different from the host material of the first functional layer 31 and the third functional layer 33, and the guest material may be different from each other; alternatively, the host material and the guest material of the first functional layer 31 are respectively the same as those of the third functional layer 33, and are different from those of the second functional layer 32.
The light-emitting functional layer 3 according to the embodiment of the present disclosure may further include a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer, which are sequentially stacked, wherein: the hole injection layer can be arranged between the anode layer 2 and the light-emitting layer and can be used for injecting holes into the hole transport layer, so that the hole injection quantity is increased, more holes enter the light-emitting layer, and the light-emitting efficiency is improved; the hole transport layer can be arranged between the hole injection layer and the light-emitting layer and can be used for transporting holes to the light-emitting layer, so that the hole mobility can be improved, and more holes can be transported to the light-emitting layer; the electron transport layer can be arranged between the light emitting layer and the cathode layer 4 and can be used for transporting electrons of the cathode layer 4 to the light emitting layer in time, so that the electron mobility is improved, and the recombination probability of the electrons and holes in the light emitting layer is improved; an electron injection layer may be provided between the electron transport layer and the cathode layer 4 and may be used to inject more electrons into the electron transport layer.
The light emitting functional layer 3 of the present disclosure may further include an electron blocking layer and a hole blocking layer, wherein: the electron blocking layer can be arranged between the hole transport layer and the light emitting layer, can be used for blocking electrons from entering the hole transport layer and keeping the electrons in the light emitting layer to continuously emit light, and the hole blocking layer can be arranged between the light emitting layer and the electron transport layer, can be used for blocking holes from entering the electron transport layer and keeping the holes in the light emitting layer, and is beneficial to improving the recombination probability of the electrons and the holes.
The light emitting device of the embodiments of the present disclosure may further include a light extraction layer, which may be used to improve light extraction efficiency and increase display luminance. The light extraction layer can be arranged on one side of the cathode layer 4 far from the light-emitting functional layer 3, and can be a transparent film formed on the cathode layer 4 or a brightness enhancement film attached on the cathode layer 4. The light extraction layer may be disposed on the second electrode layer by inkjet printing, spin coating, or the like, or may be directly attached to the surface of the cathode layer 4 away from the light-emitting functional layer 3.
The disclosed embodiments also provide a method of manufacturing a light emitting device, which may include, as shown in fig. 6:
step S110, forming an anode layer on a substrate;
step S120, forming a light-emitting functional layer on one side of the anode layer far away from the substrate; the light-emitting functional layer comprises a light-emitting layer, the light-emitting layer is provided with a host material and a guest material doped in the host material, and the doping proportion of the guest material is sequentially reduced towards the anode layer;
in step S130, a cathode layer 4 is formed on a side of the light emitting function layer 3 away from the anode layer 2.
The anode layer 2 may be a thin film formed on the substrate 1, may be a material that facilitates hole injection to the light emitting function layer 3, may have a large work function, may be a metal, an alloy, a metal oxide or a composition, for example, may be copper, zinc, gold or an alloy thereof, may also be zinc oxide, Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO), and may also be a composition of a metal and an oxide, for example, may be ZnO: Al, SnO2Sb, of course, the material of the anode layer 2 may be other, and is not listed here. Preferably, the material of the anode layer 2 may be Indium Tin Oxide (ITO).
The light-emitting functional layer 3 may be formed on the side of the anode layer 2 away from the substrate 1, may be a thin film formed on the surface of the anode layer 2 away from the substrate 1, and the light-emitting functional layer 3 may be formed on the anode layer 2 by vacuum evaporation, coating, ink-jet, screen printing, or the like, and the light-emitting functional layer 3 may be one layer or a plurality of layers, which is not particularly limited herein. The film forming process may be selected according to the type of material and its chemical and physical properties.
The light-emitting functional layer 3 may at least include a light-emitting layer, and the RGB light-emitting ratio in the light-emitting layer may be adjusted by adjusting the type and concentration of the material in the light-emitting layer, so as to adjust the brightness and color of light. The light emitting layer can comprise a plurality of layers, the doping proportion of the object materials in each layer can be sequentially reduced towards the anode layer 2, so that the cathode layer 4 side has higher doping proportion, the exciton recombination center can be increased, more places are provided for exciton recombination, the light emitting efficiency of the cathode layer 4 side can be improved, the RGB brightness difference of the cathode layer 4 side is improved, and the color deviation at low temperature is improved.
The doping ratio of the guest material to the host material in the light-emitting layer may range from 0.5% to 10%, for example, it may be 0.5%, 1%, 3%, 5%, 7%, 9%, or 10%. The doping ratio may be selected according to the types of the host material and the guest material, and is not particularly limited herein.
The cathode layer 4 may be formed on the side of the light emitting function layer 3 remote from the anode layer 2, and may be a thin film formed on the light emitting function layer 3. The anode layer 2 may be formed by vacuum evaporation, the anode layer 2 may be formed by chemical vapor deposition, coating, ink-jet, screen printing, or the like, and the anode layer 2 may be formed by other methods, which are not limited herein.
The cathode layer 4 may employ a material that facilitates electron injection into the light-emitting functional layer 3, and the material may have a small work function. For example, the material of the cathode layer 4 may be a metal or alloy material, for example, it may be magnesium, aluminum, silver, tin, lead or their alloys, or it may be a multi-layer material, such as: LiF/Al, Liq/Al, LiO2Al, LiF/Ca, LiF/Al and BaF2The material of the cathode layer 4 is not limited to this, and may be other materials, and is not listed here. Preferably, the material of the cathode layer 4 may be aluminum or magnesium.
The display panel of the present embodiment may include a plurality of display modules distributed in an array, and the display modules may include the light emitting device of any one of the above embodiments. Of course, the display panel may further include other components such as an array substrate and a color filter substrate, which are not described in detail herein. Meanwhile, the beneficial effects of the display panel can refer to the beneficial effects of the light emitting device in the above embodiments, and are not described herein again.
The display device of the present disclosure may include the display panel of any one of the above embodiments, and meanwhile, the display device of the present disclosure may be at least one of products or components having any display function, such as a liquid crystal television, a digital photo frame, a mobile phone, a tablet computer, and the like.
The display device, the light emitting device and the manufacturing method thereof can display images by applying voltage to the cathode layer 4 and the anode layer 2 to cause electrons and holes to recombine and emit light in the light emitting function layer 3. In the process, as the doping proportion of the guest materials in the light emitting layer is sequentially reduced towards the anode layer 2, the side of the cathode layer 4 has higher doping concentration, the exciton recombination center can be increased, more places are provided for exciton recombination, the light emitting efficiency of the side of the cathode layer 4 can be improved, the RGB brightness difference is improved, and the color deviation at low temperature is further improved. The type and concentration of the material in the luminescent layer can be adjusted, so that the RGB luminescent proportion in the luminescent layer can be adjusted, the adjustment of the color and brightness of light can be realized, and the color deviation can be further improved. Meanwhile, the light extraction efficiency can be improved through the light extraction layer, and the display brightness is increased.
Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.
Claims (10)
1. A light emitting device, comprising:
an anode layer;
a cathode layer disposed on one side of the anode layer;
and the light emitting function layer is arranged between the anode layer and the cathode layer and comprises a light emitting layer, the light emitting layer is provided with a host material and an object material doped in the host material, and the doping proportion of the object material is sequentially reduced towards the anode layer.
2. The light-emitting device according to claim 1, wherein a doping ratio of the guest material to the host material in the light-emitting layer is in a range of 0.5% to 10%.
3. The light-emitting device according to claim 1, wherein the light-emitting layer includes at least a first functional layer, a second functional layer, and a third functional layer which are stacked in this order, and wherein a host material of the second functional layer is the same as a host material of the first functional layer and a guest material of the third functional layer is different from each other;
or the host material of the second functional layer is different from the host material of the first functional layer and the third functional layer, and the guest materials are the same.
4. The light-emitting device according to claim 1, wherein the light-emitting layer includes at least a first functional layer, a second functional layer, and a third functional layer which are stacked in this order, and wherein a host material of the second functional layer is different from a host material of the first functional layer and a guest material of the third functional layer is different from each other;
or the host material and the guest material of the first functional layer are respectively the same as the host material and the guest material of the third functional layer, and are different from the host material and the guest material of the second functional layer.
5. The light-emitting device according to claim 1, wherein the material of the light-emitting layer is a fluorescent material, and a doping ratio of a guest material to a host material of the fluorescent material is 0.5% to 5%.
6. The light-emitting device according to claim 3 or 4, wherein the thicknesses of the first functional layer, the second functional layer, and the third functional layer each range from 10nm to 50 nm.
7. The light-emitting device according to claim 1, wherein the light-emitting function layer further comprises:
a hole injection layer disposed between the anode layer and the light emitting layer;
a hole transport layer disposed between the hole injection layer and the light emitting layer;
an electron transport layer disposed between the light emitting layer and the cathode layer;
and the electron injection layer is arranged between the electron transmission layer and the cathode layer.
8. A method of manufacturing a light emitting device, comprising:
forming an anode layer over a substrate;
forming a light-emitting functional layer on one side of the anode layer far away from the substrate; the light-emitting functional layer comprises a light-emitting layer, the light-emitting layer is provided with a host material and a guest material doped in the host material, and the doping proportion of the guest material is sequentially reduced towards the anode layer;
and forming a cathode layer on one side of the light-emitting function layer far away from the anode layer.
9. A display panel comprising a plurality of display elements arranged in an array, each of the display elements comprising a light emitting device according to any one of claims 1 to 7.
10. A display device characterized by comprising the display panel according to claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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