CN105826478A - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN105826478A CN105826478A CN201510371554.7A CN201510371554A CN105826478A CN 105826478 A CN105826478 A CN 105826478A CN 201510371554 A CN201510371554 A CN 201510371554A CN 105826478 A CN105826478 A CN 105826478A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 622
- 239000002184 metal Substances 0.000 claims abstract description 622
- 239000000463 material Substances 0.000 claims abstract description 116
- 239000011368 organic material Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000005525 hole transport Effects 0.000 claims abstract description 15
- 238000006073 displacement reaction Methods 0.000 claims description 61
- 230000005611 electricity Effects 0.000 claims description 43
- 230000005540 biological transmission Effects 0.000 claims description 42
- 230000000737 periodic effect Effects 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 9
- 230000003595 spectral effect Effects 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 238000004020 luminiscence type Methods 0.000 claims description 7
- 229920001621 AMOLED Polymers 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000003993 interaction Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 44
- 239000007924 injection Substances 0.000 description 44
- 229910052709 silver Inorganic materials 0.000 description 17
- 239000010931 gold Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000001808 coupling effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- XOYZGLGJSAZOAG-UHFFFAOYSA-N 1-n,1-n,4-n-triphenyl-4-n-[4-[4-(n-[4-(n-phenylanilino)phenyl]anilino)phenyl]phenyl]benzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 XOYZGLGJSAZOAG-UHFFFAOYSA-N 0.000 description 3
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 3
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 3
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 3
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- HWQQCFPHXPNXHC-UHFFFAOYSA-N 6-[(4,6-dichloro-1,3,5-triazin-2-yl)amino]-3',6'-dihydroxyspiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound C=1C(O)=CC=C2C=1OC1=CC(O)=CC=C1C2(C1=CC=2)OC(=O)C1=CC=2NC1=NC(Cl)=NC(Cl)=N1 HWQQCFPHXPNXHC-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RIKNNBBGYSDYAX-UHFFFAOYSA-N 2-[1-[2-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]-n,n-bis(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C(=CC=CC=1)C1(CCCCC1)C=1C(=CC=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 RIKNNBBGYSDYAX-UHFFFAOYSA-N 0.000 description 1
- RKVIAZWOECXCCM-UHFFFAOYSA-N 2-carbazol-9-yl-n,n-diphenylaniline Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 RKVIAZWOECXCCM-UHFFFAOYSA-N 0.000 description 1
- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 description 1
- MZYDBGLUVPLRKR-UHFFFAOYSA-N 9-(3-carbazol-9-ylphenyl)carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 MZYDBGLUVPLRKR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 diphenyl-amino Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- JUOOLRVDHMWLDC-UHFFFAOYSA-N n-(4-fluorophenyl)-4-methyl-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(F)=CC=1)C1=CC=C(C)C=C1 JUOOLRVDHMWLDC-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
Abstract
A light emitting device includes a substrate, a first metal layer and a second metal layer sequentially formed on the substrate, and an organic material layer formed between the first metal layer and the second metal layer, wherein the first metal layer has a uniform thickness or includes a plurality of metal portions or further includes an opening portion exposing a portion of the substrate surface, the organic material layer includes a hole transport material and an electron transport material in contact with each other to generate an excited complex capable of emitting light having a peak wavelength in a first range by interaction, the first and second metal layers spaced apart from the organic material layer are coupled to each other, and the peak wavelength of the light is shifted to a second range and/or a third range by adjusting the thickness of the first metal layer or a distance between the first metal layer and the second metal layer.
Description
Technical field
This case relates to a kind of light-emitting component, espespecially a kind of organic illuminating element.
Background technology
Generally a light emitting diode (Light-EmittingDiode；LED) semi-conducting material is used, make these materials become p-type and N-shaped, then the formation pn junction that they is bonded together by modes such as doping, then electronics and electricity hole can be injected from N-shaped and p-type material respectively, and when electrons and holes is met and combined, can give off energy with the form of photon.
Organic Light Emitting Diode (OrganicLight-EmittingDiode；OLED) it is then to use organic material.The luminescence process of Organic Light Emitting Diode approximately as: apply a forward bias, electronics and electricity hole is made to be injected with anode by negative electrode respectively after overcoming interface energy barrier, under electric field action, electrons and holes moves towards and forms exciton at luminescent layer, last electronics and electricity hole combine at luminescent layer, and exciton annihilation also releases luminous energy.It addition, adulterate in luminescent layer, object fluorescent/phosphorescent luminescent material can improve luminous efficiency and the service life of OLED.
In recent years, red, the green or luminous efficiency of blue emitting material of OLED and have service life the most progressive, especially green luminescent material, only blue emitting material is the most backward, although wherein blue phosphor materials efficiency can accomplish 20.4cd/A, but its life-span only has hundreds of hours.
Therefore, how to overcome foregoing problems, the most do not use blue-fluorescence/phosphorescent guest luminescent material, and develop high efficiency OLED element, for crucial subject under discussion in the market.
Summary of the invention
A kind of light-emitting component of this case proposition, does not include luminescent layer, is only interacted by electricity hole transmission material and electron transport material in organic material layer and excite misfit thing with what generation can emit beam, thereby reduce cost of manufacture and operation.
The light-emitting component of this case includes: substrate；The first metal layer, it is formed on this substrate；Second metal level, it is formed at above this first metal layer；And organic material layer, it is formed between this first metal layer and this second metal level and includes electric hole transmission material and the electron transport material contacted with each other；Wherein, this electricity hole transmission material and this electron transport material interact with produce can send peak wavelength be positioned at the first scope light excite misfit thing, and produce between this first metal layer with this second metal level and couple so that the peak wavelength displacement of this light, and adjust the distance between this first metal layer and this second metal level or the thickness of this first metal layer, so that the peak value ripple of this light is moved to the second scope or the 3rd scope.
This case proposes another kind of light-emitting component, comprising: substrate, it has a surface；The first metal layer, its be formed on this substrate and have the first metal portion, the second metal portion and between this first metal portion and the second metal portion and expose part this surface peristome；Second metal level, it is formed at above this first metal layer；And organic material layer, it is formed between this first metal layer and this second metal level and covers this first metal portion, the second metal portion and this surface of part exposed by this peristome, and this organic material layer also includes electric hole transmission material and the electron transport material contacted with each other；Wherein, this electricity hole transmission material and this electron transport material interact and produce can send peak wavelength be positioned at the first scope light excite misfit thing, and this first metal portion and this second metal level produce first and couples so that the peak wavelength of this light is from this first range displacement to the second scope, this second metal portion couple with this second metal level generation second so that the peak wavelength of this light from this first range displacement to the 3rd scope.
A kind of light-emitting component, is characterized by, this light-emitting component includes: substrate；The first metal layer, it is formed on the substrate；Second metal level, it is formed at above this first metal layer；3rd metal level, it is formed at this second metal layer；4th metal level, it is formed at the 3rd metal layer；First organic material layer, it is formed between this first metal layer and this second metal level；Second organic material layer, it is formed between this second metal level and the 3rd metal level；And the 3rd organic material layer, it is formed between the 3rd metal level and the 4th metal level；Wherein, this first organic material layer, this second organic material layer, 3rd organic material layer each includes electric hole transmission material and the electron transport material contacted with each other, and this electricity hole transmission material and this electron transport material interact produced by excite misfit thing can send peak wavelength to be positioned at the light of the first scope, so that this first organic material layer, this second organic material layer, 3rd organic material layer is each sent the first light, second light, the peak wavelength of the 3rd light is all in the range of first, produce between this second metal level with the 3rd metal level second couple so that the peak wavelength of this second light from this first range displacement to the second scope, and the 3rd produce between metal level and the 4th metal level the 3rd couple so that the peak wavelength of the 3rd light from this first range displacement to the 3rd scope.
This case proposes another kind of light-emitting component, and it includes multiple pixel, and respectively this pixel includes: substrate, and it has a surface；The first metal layer, it is formed on this substrate；Second metal level, it is formed at above this first metal layer；And organic material layer, it is formed between this first metal layer and this second metal level and includes electric hole transmission material and the electron transport material contacted with each other, and this electricity hole transmission material and this electron transport material interact with produce can send peak wavelength be positioned at the first scope light excite misfit thing, and couple the peak wavelength displacement so that this light across this first metal layer of this organic material layer with the generation of this second metal level；Wherein, respectively this pixel be following one of them: this first metal layer is completely covered this surface, by adjusting that the thickness of this first metal layer is the least or this first metal layer is the biggest with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to this second scope, or, by adjusting that the thickness of this first metal layer is the biggest or this first metal layer is the least with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to the 3rd scope；This first metal layer has the metal portion on this surface of part covering this substrate and exposes the peristome remaining this surface of this substrate, by adjusting that the thickness in this metal portion is the least or this metal portion is the biggest with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to this second scope, or, by adjusting that the thickness in this metal portion is the biggest or this metal portion is the least with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to the 3rd scope；This first metal layer has the first metal portion and the second metal portion covering this surface, by adjusting that the thickness in this first metal portion is the least or this first metal portion is the biggest with the distance of this second metal interlevel so that the peak wavelength of this light is from this first range displacement to this second scope, by adjusting that the thickness in this second metal portion is the biggest or this second metal portion is the least with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to the 3rd scope；And this first metal layer has the first metal portion, the second metal portion and the peristome on this surface of exposed parts between this first metal portion and the second metal portion, by adjusting that the thickness in this first metal portion is the least or this first metal portion is the biggest with the distance of this second metal interlevel so that the peak wavelength of this light is from this first range displacement to this second scope, by adjusting that the thickness in this second metal portion is the biggest or this second metal portion is the least with the distance of this second metal interlevel so that the peak wavelength of this light from this first range displacement to the 3rd scope.
Accompanying drawing explanation
Figure 1A and Figure 1B is the schematic diagram of an embodiment of the light-emitting component of this case；
Fig. 2 A to Fig. 2 C is the schematic diagram of another embodiment of the light-emitting component of this case；
Fig. 3 A to Fig. 3 C is the schematic diagram of the another embodiment of the light-emitting component of this case；
Fig. 4 is the schematic diagram of the another embodiment of the light-emitting component of this case；
Fig. 5 A and the red shift of light-emitting component that Fig. 5 B is Figure 1A and blue shift schematic diagram；
Fig. 6 A and the red shift of light-emitting component that Fig. 6 B is Figure 1B and blue shift schematic diagram；
Fig. 7 is the schematic diagram of the periodic structure included by the light-emitting component of this case；
The periodic structure of Fig. 8 A and light-emitting component that Fig. 8 B is this case and the graph of relation of applicable wavelengths；
The schematic diagram of the Application Example of Fig. 9 A and light-emitting component that Fig. 9 B is this case；And
Figure 10 is the schematic diagram of the another embodiment of the light-emitting component of this case.
Wherein, reference:
100,200,300,400,500 light-emitting component
10,201 pixel
201s sub-pixel
2 substrates
21 surfaces
3,3 ', 3 ", 3a the first metal layer
30 periodic structures
31 first metal portions
32 second metal portions
33 peristomes
4a the first organic material layer
4b the second organic material layer
4c the 3rd organic material layer
41,43 carrier injections/transport layer
42 organic material layers
421 electricity hole transport layers
422 electron transfer layers
5 second metal levels
6 negative electrodes
61 the first metal layers
62 second metal levels
63 the 3rd metal levels
64 the 4th metal levels
7 anodes
8 thin film transistor (TFT)s
D1Distance (thickness)
D1-g、D1-r、D1-bDistance
D2、D3、D2-r、D2-b、D2-gThickness
W size
The Λ cycle.
Detailed description of the invention
The embodiment of this case is described by specific embodiment below, and those skilled in the art can be understood other advantages and effect of this case easily by the disclosure herein.Structure depicted in this specification institute accompanying drawings, ratio, size etc. are all only used for coordinating the content disclosed in description, understanding and reading for people skilled in the art, non-for limiting the enforceable qualifications of this case, therefore any modification, be altered or modified, under not affecting effect that this case can be generated by and the purpose that can reach, all should still fall in the range of the technology contents disclosed in this case obtains and can contain.
Referring to Figure 1A and Figure 1B, the light-emitting component 100 of this case includes substrate 2, the first metal layer 3, carrier injection/transport layer 41, organic material layer 42, carrier injection/transport layer 43 and the second metal level 5 sequentially stacked.
The material of substrate 2 can be glass, plastic cement or conducting metal oxide, such as tin indium oxide (indiumtinoxide；Or indium zinc oxide (indiumzincoxide ITO)；IZO), can use as anode when substrate 2 is ITO or IZO.
In the present embodiment, the first metal layer 3 is formed on substrate 2 fully to cover substrate 2, and at this, so-called " fully " refers to not expose the surface of substrate 2.The material of the first metal layer 3 can be metal (such as aluminum or its conjunction gold, silver or its alloy, gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or nano-metal-oxide, such as BCP/V2O5、MoO3、ZnS/Ag/ZnO/Ag、ZnPc/C60, separately can include nano metal line.The first metal layer also can be as electrode, such as male or female.Additionally, as illustrated in figures ia and ib, the first metal layer 3 has thickness D2, about 5nm-20nm.
Carrier injection/transport layer 41 is formed on the first metal layer 3.When second metal level 5 is as negative electrode as anode for substrate 2 or the first metal layer 3, carrier injection/transport layer 41 is electricity hole injection/transport layer；Otherwise, when second metal level 5 is as anode as negative electrode for substrate 2 or the first metal layer 3, carrier injection/transport layer 41 is electronics injection/transport layer.
Organic material layer 42 is formed in carrier injection/transport layer 41, and includes electric hole transmission material and the electron transport material contacted with each other.As shown in Figure 1A, organic material layer 42 is to be mixed with electricity hole transmission material and the mixed layer of electron transport material；As shown in Figure 1B, organic material layer 42 includes the electric hole transport layer 421 being made up of electricity hole transmission material and contacts and be arranged at the electron transfer layer 422 being made up of electron transport material in electricity hole transport layer 421.When carrier injection/transport layer 41 is electricity hole injection/transport layer, electricity hole transport layer 421 is adjacent to this electricity hole injection/transport layer, also can be considered neighbouring the first metal layer 3, and electron transfer layer 422 is adjacent to the carrier injection/transport layer 43 as electronics injection/transport layer, it is possible to be considered as neighbouring second metal level 5.
In the present embodiment, electricity hole transmission material such as 1, double (nitrogen-carbazyl) phenyl (1,3-bis (N-carbazolyl) benzene of 3-；MCP), 4,49,40-tri-(nitrogen-carbazyl) triphenylamine (4,49,40-tri (N-carbazolyl) triphenylamine；TCTA), 9,9-bis-[4-(two-p-methylphenyl) aminophenyl] fluorine (9,9-di [4-(di-p-tolyl) aminophenyl] fluorine；DTAF), double [(two-4-Tolylamino) phenyl] hexamethylene (1,1-bis [(di-4-tolylamino) phenyl] cyclohexane of 1,1-；Or N, N'-diphenyl-N, N-bis-TAPC)-[4-(N, N ' diphenyl-amino) phenyl] benzidine (N, N '-diphenyl-N, N '-di-[4-(N, Ndiphenyl-amino) phenyl] benzidine；NPNPB), its structure is respectively as shown in formula (1)-(5).
... ... ... ... ... ... ... ... formula (1)
... ... ... ... ... ... ... ... formula (2)
... ... ... ... ... ... ... ... formula (3)
... ... ... ... ... ... ... ... formula (4)
... ... ... ... ... ... ... formula (5)
Double (3,5-bis-(3-pyridine) base phenyl)-2-methylpyrimidine (4,6-Bis (3,5-di (pyridin-3-yl) the phenyl)-2-MethylpyriMidine of electron transport material such as PO-T2T or 4,6-；B3PYMPM), its structure is respectively as shown in formula (6)-(7).
... ... ... ... ... ... ... ... formula (6)
... ... ... ... ... ... formula (7)
It should be noted that, transmission material in electricity hole can excite misfit thing (exciplex) with electron transport material interaction generation, can produce with PO-T2T material for electron transport material collocation different electric hole transmission material to send and different photochromic excites misfit thing.Such as, PO-T2T/mCP can send blue light (its peak wavelength is about at 380nm-495nm), PO-T2T/TCTA can send green glow (its peak wavelength is about at 495nm-570nm), PO-T2T/DTAF can send gold-tinted (its peak wavelength is about at 570nm-590nm), PO-T2T/TAPC can send Fructus Citri tangerinae light (its peak wavelength is about at 590nm-620nm), PO-T2T/NPNPB can send HONGGUANG (its peak wavelength is about at 570nm-750nm).
Carrier injection/transport layer 43 is formed on organic material layer 42.When second metal level 5 is as negative electrode as anode for substrate 2 or the first metal layer 3, carrier injection/transport layer 43 is electronics injection/transport layer；Otherwise, when second metal level 5 is as anode as negative electrode for substrate 2 or the first metal layer 3, carrier injection/transport layer 43 is electricity hole injection/transport layer.It addition, as illustrated in figures ia and ib, stacking of carrier injection/transport layer 41, organic material layer 42 and carrier injection/transport layer 43 has thickness D1, about 75nm-150nm, and the thickness adjusting carrier injection/transport layer 41, organic material layer 42 and carrier injection/transport layer 43 any layer can change distance D between the first metal layer 3 and the second metal level 51。
Second metal level 5 is formed in carrier injection/transport layer 43, so that organic material layer 42 is between the first metal layer 3 and the second metal level 5, then makes the spacing of the first metal layer 3 and the second metal level 5 have D1.The material of the second metal level 5 can be metal (such as aluminum or its conjunction gold, silver or its alloy, gold or its alloy), such as Al/LiF, Ag/Al/Ag, Ag/Ge/Ag, or nano-metal-oxide, such as BCP/V2O5、MoO3、ZnS/Ag/ZnO/Ag、ZnPc/C60, use usually used as negative electrode.It addition, as illustrated in figures ia and ib, the second metal level 5 has thickness D3, about more than 20nm.
When apply a voltage jump between the second metal level 5 and the first metal layer 3 or substrate 2 time, electric hole transmission material in organic material layer 42 can interact with electron transport material and excite misfit thing with what generation can emit beam, now by coupling between the first metal layer 3 with the second metal level 5, i.e. plasma-based coupling (plasmoncoupling) effect, the peak wavelength displacement of this light exciting misfit thing to be sent can be made, such as (claim red shift toward the displacement of longer wavelengths of direction, redshift) or toward the shorter direction displacement (blue shift of wavelength, blueshift).Therefore, distance D between the first metal layer 3 and the second metal level 5 is adjusted1Or the thickness D of the first metal layer 32The peak wavelength red shift of the light that organic material layer 42 sent can be made or be blue shifted to different wave bands, such as, from green light band (its peak wavelength is about at 495nm-570nm) red shift to red spectral band (its peak wavelength is about at 570nm-750nm), or from red spectral band (its peak wavelength is about at 570nm-750nm) red shift near infrared light wave band (its peak wavelength is approximately less than 1240nm)；Or, green light band it is blue shifted to blue wave band (its peak wavelength is about at 380nm-495nm).
Referring next to Fig. 2 A to Fig. 2 C, the light-emitting component 200 of the present embodiment is only that with the difference of the light-emitting component 100 shown in Figure 1A to Figure 1B, and the first metal layer 3 ' includes the first metal portion 31 and the second metal portion 32 being covered in the surface of substrate 2.Certainly, organic material layer 42 includes electric hole transmission material and the electron transport material contacted with each other the most as shown in figure 1 a or figure 1b.
The thickness D in the first metal portion 312-rAdjustment and distance D between the first metal portion 31 and the second metal level 5 between 5nm-20nm1-rAdjust between 75nm-150nm so that the peak wavelength of light that sent of organic material layer 42 is from this first range displacement to this second scope (it is, red shift is to longer peak wavelength)；The thickness D in the second metal portion 322-bAdjustment and distance D between the second metal portion 32 and the second metal level 5 between 5nm-20nm1-bAdjust between 75nm-150nm so that the peak wavelength of light that sent of organic material layer 42 from this first range displacement to the 3rd scope (it is, being blue shifted to shorter peak wavelength), and wherein, the thickness D in the second metal portion 322-bThickness D more than the first metal portion 312-rOr distance D that second between metal portion 32 and the second metal level 51-bLess than distance D between the first metal portion 31 and the second metal level 51-r.Thereby, light-emitting component 200 can be simultaneously emitted by the light of two kinds of different-wavebands.Or, it is possible to the first metal portion 31 and the second metal portion 32 one of which replace to peristome (not giving graphic), then light-emitting component 200 can send originally that this excites the light after light produced by misfit thing and red shift or blue shift.
It addition, the thickness D in the first metal portion 31 of adjustment2-rOr distance D that first between metal portion 31 and the second metal level 51-rThe numerical value of this second scope can be changed.Adjust the thickness D in the second metal portion 322-bOr distance D that second between metal portion 32 and the second metal level 51-bThe numerical value of the 3rd scope can be changed.As shown in Figure 2 A, the thickness D in the first metal portion 312-rThickness D with the second metal portion 322-bDiffer, and distance D between the first metal portion 31 and the second metal level 51-rAnd distance D that second between metal portion 32 and the second metal level 51-bIdentical, it is, carrier injection/transport layer 41, organic material layer 42 and carrier injection/transport layer 43 to stack integral thickness identical, the second metal level 5 integral thickness D3Identical.As shown in fig. 2 b and fig. 2 c, the thickness D in the first metal portion 312-rThickness D with the second metal portion 322-bIdentical, and distance D between the first metal portion 31 and the second metal level 51-rAnd distance D that second between metal portion 32 and the second metal level 51-bDiffer；Wherein, Fig. 2 B mainly adjusts distance D between the first metal portion 31 and the second metal level 5 with organic material layer 421-rAnd distance D that second between metal portion 32 and the second metal level 51-b, and carrier injection/transport layer 41 thickness entirety is identical, carrier injection/transport layer 43 thickness entirety is identical, the second metal level 5 thickness D3Overall identical；Wherein, Fig. 2 C mainly adjusts distance D between the first metal portion 31 and the second metal level 5 with carrier injection/transport layer 411-rAnd distance D that second between metal portion 32 and the second metal level 51-b, and organic material layer 42 integral thickness is identical, carrier injection/transport layer 43, the second metal level 5 thickness D3Overall identical.Also, distance D between the first metal portion 31 and the second metal level 5 can also be adjusted carrier injection/transport layer 431-rAnd distance D that second between metal portion 32 and the second metal level 51-b。
Referring next to Fig. 3 A to Fig. 3 C, the light-emitting component 300 of the present embodiment is only that with the difference of the light-emitting component 100 shown in Figure 1A to Figure 1B, the first metal layer 3 " can be patterned metal layer or grid-shaped metal layer, it the 31, second metal portion 32 of the first metal portion including being covered in the surface 21 of substrate 2 and the peristome 33 on exposed parts surface 21 between the first metal portion 31 and the second metal portion 32.Certainly, organic material layer 42 includes electric hole transmission material and the electron transport material contacted with each other the most as shown in figure 1 a or figure 1b.
In light-emitting component 300, the electric hole transmission material in organic material layer 42 interacts with electron transport material and excites misfit thing with what generation can emit beam, and the peak wavelength of this light (peakwavelength) is in the first scope.In addition, produce first between first metal portion 31 with the second metal level 5 to couple, namely plasma-based coupling (plasmoncoupling) effect so that the peak wavelength of this light is from this first range displacement to the second scope (such as red shift is to longer peak wavelength).Couple additionally, produce second between the second metal portion 32 with the second metal level 5 so that the peak wavelength of light is from this first range displacement to the 3rd scope (being such as blue shifted to shorter peak wavelength).
It should be noted that, this light be all to (isotropic), when the second metal level 5 has reflecting effect, peak wavelength can pass to leave this light-emitting component 300 from peristome 33 at the light of the first scope, peak wavelength may pass through the first metal portion 31 to leave light-emitting component 300 at the light of the second scope, and peak wavelength may pass through the second metal portion 32 to leave light-emitting component 300 at the light of the 3rd scope；When the second metal level 5 is transparent, aforementioned peak wavelength can also penetrate through the second metal level 5 to leave light-emitting component 300 at the light of the first scope, the second scope and the 3rd scope.
Adjust the thickness D in the first metal portion 312-rOr distance D that first between metal portion 31 and the second metal level 51-rThe numerical value of this second scope can be changed.Adjust the thickness D in the second metal portion 322-bOr distance D that second between metal portion 32 and the second metal level 51-bThe numerical value of the 3rd scope can be changed.As shown in Figure 3A, the thickness D in the first metal portion 312-rThickness D with the second metal portion 322-bDiffer, and distance D between the first metal portion 31 and the second metal level 51-r, distance D between the second metal portion 32 and the second metal level 51-bAnd correspond to distance D between the substrate 2 of peristome 33 and the second metal level 51-gIdentical, it is, carrier injection/transport layer 41, organic material layer 42 and carrier injection/transport layer 43 to stack integral thickness identical, the second metal level 5 integral thickness D3Identical.As shown in Fig. 3 B and Fig. 3 C, the thickness D in the first metal portion 312-rThickness D with the second metal portion 322-bIdentical, and distance D between the first metal portion 31 and the second metal level 51-rAnd distance D that second between metal portion 32 and the second metal level 51-bDiffer；Wherein, Fig. 3 B mainly adjusts distance D between the first metal portion 31 and the second metal level 5 with organic material layer 421-rAnd distance D that second between metal portion 32 and the second metal level 51-b, and carrier injection/transport layer 41 thickness entirety is identical, carrier injection/transport layer 43 thickness entirety is identical, the second metal level 5 thickness D3Overall identical；Wherein, Fig. 3 C mainly adjusts distance D between the first metal portion 31 and the second metal level 5 with carrier injection/transport layer 411-rAnd distance D that second between metal portion 32 and the second metal level 51-b, and organic material layer 42 integral thickness is identical, carrier injection/transport layer 43, the second metal level 5 thickness D3Overall identical.Also, distance D between the first metal portion 31 and the second metal level 5 can also be adjusted carrier injection/transport layer 431-rAnd distance D that second between metal portion 32 and the second metal level 51-b。
Such as, excite the peak wavelength of the light that misfit thing sent at 495nm-570nm (green light band), the thickness D in the first metal portion 312-rAbout 5nm-20nm and distance D between itself and the second metal level 51-rAbout 75nm-150nm, then can produce first and couple so that the peak wavelength of this light is moved to 570nm-750nm between the first metal portion 31 with the second metal level 5, and the thickness D in the second metal portion 322-bAbout 5nm-20nm and distance D between itself and the second metal level 51-bAbout 75nm-150nm, wherein the thickness D in the second metal portion 322-bThickness D more than the first metal portion 312-rOr distance D between the second metal portion 32 and the second metal level 51-bLess than distance D between the first metal portion 31 and the second metal level 51-r, then can produce second between the second metal portion 32 with the second metal level 5 and couple so that the peak wavelength of this light is moved to 380nm-495nm (blue wave band).The most such as, excite the peak wavelength of the light that misfit thing sent at 570nm-750nm, the thickness D in the first metal portion 312-rAbout 5nm-20nm and distance D between itself and the second metal level 51-rAbout 150nm-1000nm, then can produce first and couple so that the peak wavelength of this light is moved to less than 1240nm between the first metal portion 31 with the second metal level 5, and the thickness D in the second metal portion 322-bAbout 5nm-20nm and distance D between itself and the second metal level 51-bAbout 30nm-75nm, then can produce second and couple so that the peak wavelength of this light is moved to more than 305nm between the second metal portion 32 with the second metal level 5.Thereby, luminescence component 300 can send the light of three kinds of different-wavebands, such as HONGGUANG, green glow and blue light, to be mixed into white light, separately it is adjusted by the first metal portion 31 and the second metal portion 32 covers area and the area of peristome 33 exposed surface on substrate 2 surface 21, the ratio of green glow, HONGGUANG and blue light can be changed.
Above-mentioned utilize Figure 1A-Figure 1B, Fig. 2 A-Fig. 2 C and Fig. 3 A-Fig. 3 C illustrates the structure of the light-emitting component of this case, it includes the substrate 2 sequentially stacked, the first metal layer 3 (or 3 ' or 3 "), carrier injection/transport layer 41, there is electric hole transmission material and the organic material layer 42 of electron transport material, carrier injection/transport layer 43 and the second metal level 3, and do not include the luminescent layer described in prior art, wherein, the first metal layer 3 (or 3 ' or 3 ") can be following one of them: the surface of substrate 2 is completely covered consistency of thickness, as illustrated in figs, the light-emitting component 100 constituted can send the light of a kind of wave band；There is no interval including between different or different from the distance of the second metal interlevel metal portion of at least two thickness 31 and 32 and these metal portions 31 and 32, as shown in figures 2 a-c, the light-emitting component 200 constituted can send the light of two kinds of wave bands；And include at least two metal portions 31 and 32 and between this metal portion the peristome 33 on the surface of exposed parts substrate 2, as shown in figs. 3 a-3 c, the light-emitting component 300 constituted can send the light of three kinds of wave bands.
Refer to Fig. 4, in the present embodiment, substrate 2 that light-emitting component 400 includes sequentially stacking, the first metal layer the 61, first organic material layer 4a, second metal level the 62, second organic material layer 4b, the 3rd metal level the 63, the 3rd organic material layer 4c and the 4th metal level 64.
Size and the material of substrate 2 are identical with the substrate 2 in first embodiment.The first metal layer the 61, second metal level the 62, the 3rd metal level 63 is identical with the size of the first metal layer 3 in first embodiment and material, such as at 5nm-20nm, can be by metal (Al/LiF, Ag/Al/Ag, Ag/Ge/Ag) or nano-metal-oxide (BCP/V2O5、MoO3、ZnS/Ag/ZnO/Ag、ZnPc/C60) constituted.4th metal level 64 is identical with the size of the second metal level 5 in first embodiment and material using can be as anode as negative electrode, substrate 2 or the first metal layer 61 one of which.First organic material layer 4a, the second organic material layer 4b and the 3rd organic material layer 4c are identical with the organic material layer 4 in first embodiment, such as green fluorescent Alq3Material, and include electric hole transmission material and the electron transport material contacted with each other.
nullFirst organic material layer 4a、Second organic material layer 4b、3rd organic material layer 4c all has electron transport material and electricity hole transmission material，And electron transport material and electricity hole transmission material can interact and can send the peak wavelength position light in the first scope to produce，Make the first light that the first organic material layer 4a is sent、The second light that second organic material layer 4b is sent、The peak wavelength of the 3rd light that the 3rd organic material layer 4c is sent is all in the first scope，The first metal layer 61 and the second metal level 62 are in order to make this first light produce gain，Produce between second metal level 62 and the 3rd metal level 63 second couple so that the peak wavelength of this second light from this first range displacement to the second scope，Produce between 3rd metal level 63 and the 4th metal level 64 the 3rd couple so that the peak wavelength of the 3rd light from this first range displacement to the 3rd scope.Additionally, adjust the thickness D of the first metal layer 612-g, the thickness D of this second metal level 622-r, or the first metal layer 61 and this second metal level 62 between distance D1-gTo change the gain of this first light.Adjust the thickness D of the second metal level 622-r, the thickness D of the 3rd metal level 632-b, or the second metal level 62 and the 3rd metal level 63 between distance D1-rTo change the numerical value of this second scope.Adjust the thickness D of the 3rd metal level 632-b, distance D between the thickness of the 4th metal level 64 or the 3rd metal level 63 and the 4th metal level 641-bTo change the numerical value of the 3rd scope.
Such as, the peak wavelength of this first, second, third light is at 495nm-570nm, and wherein the wave band of this second light can contain 495nm-750nm, the wave band of the 3rd light can contain 380nm-570nm, then through thickness D2-r、D2-bAll in 5nm-20nm and distance D1-rAfter second metal level 62 of 75nm-150nm couples with the second of the 3rd metal level 63, the peak wavelength of this second light is moved to 570nm-750nm, separately through distance D1-bAt 75nm-150nm and less than distance D1-rThe 3rd metal level 63 couple with the 3rd of the 4th metal level 64 after, the peak wavelength of the 3rd light is moved to 380nm-495nm.The most such as, the peak wavelength of this first, second, third light is at 570nm-750nm, and wherein the wave band of this second light can contain 570nm-1240nm, the wave band of the 3rd light can contain 305nm-750nm, then through thickness D2-r、D2-bAll in 5nm-20nm and distance D1-rAfter second metal level 62 of 150nm-1000nm couples with the second of the 3rd metal level 63, the peak wavelength of this second light is moved to less than 1240nm, separately through distance D1-bAt 30nm-75nm and less than distance D1-rThe 3rd metal level 63 couple with the 3rd of the 4th metal level 64 after, the peak wavelength of the 3rd light is moved to more than 305nm.Accordingly, luminescence component 300 can produce the light of green, red and blue three kinds of wave bands, and sends the white light being made up of the light of these three kinds of wave bands.
The thickness of each layer and the relation of the peak wavelength of the light exciting misfit thing to be sent are described with table 1-12 further below.
First, illustrate not include the first metal layer (i.e. its thickness D with Tables 1 and 22For 0nm) comparative example and the experimental example including the first metal layer between difference.It should be noted that, in comparative example 1-4, the material of the second metal level is aluminum；In experimental example 1-4, the material of the first metal layer and the second metal level is all aluminum；In comparative example 1-2 and experimental example 1-2, organic material layer is the mixed layer of TAPC and B3PYMPM of one layer of 1:1；In comparative example 3-4 and experimental example 3-4, organic material layer includes the parallel one layer of TAPC stacked and one layer of B3PYMPM.It addition, table 1-table 12 is with D1Represent the first metal layer and the second metal level distance each other, it is possible to represent D1-r、D1-b；With D2Represent the thickness of the first metal layer, it is possible to represent D2-r、D2-b。
Table 1
| D1(nm) | D2(nm) | Peak wavelength (nm) | Displacement | |
| Comparative example 1 | 100 | 0 | 520 | Before non-displacement |
| Experimental example 1 | 100 | 15 | 497 | Blue shift |
| Comparative example 2 | 130 | 0 | 517 | Before non-displacement |
| Experimental example 2 | 130 | 15 | 572 | Red shift |
Finding according to table 1 and refering to Fig. 5 A and Fig. 5 B, comparative example 1 is compared with experimental example 1, when distance D1For 100nm and the first metal layer thickness D2During for 0nm, the peak wavelength of this light is 520nm, as shown in the block curve of Fig. 5 A；As the first metal layer thickness D2During for 15nm, the peak wavelength of this light is then blue shifted to 497nm, as shown in the dot-dash curve of Fig. 5 A.Comparative example 2 is compared with experimental example 2, when distance D1For 130nm and the first metal layer thickness D2During for 0nm, the peak wavelength of this light is 517nm, as shown in the block curve of Fig. 5 B；As the first metal layer thickness D2During for 15nm, the peak wavelength of this light then red shift to 572nm, as shown in the dot-dash curve of Fig. 5 B.
Table 2
| D1(nm) | D2(nm) | Peak wavelength (nm) | Displacement | |
| Comparative example 3 | 90 | 0 | 492 | Before non-displacement |
| Experimental example 3 | 90 | 15 | 460 | Blue shift |
| Comparative example 4 | 130 | 0 | 506 | Before non-displacement |
| Experimental example 4 | 130 | 15 | 569 | Red shift |
Finding according to table 2 and refering to Fig. 6 A and Fig. 6 B, comparative example 3 is compared with experimental example 3, when distance D1For 90nm and the first metal layer thickness D2During for 0nm, the peak wavelength of this light is 492nm, as shown in the block curve of Fig. 6 A；As the first metal layer thickness D2During for 15nm, the peak wavelength of this light is then blue shifted to 460nm, as shown in the dot-dash curve of Fig. 6 A.Comparative example 4 is compared with experimental example 4, when distance D1For 130nm and the first metal layer thickness D2During for 0nm, the peak wavelength of this light is 506nm, as shown in the block curve of Fig. 6 B；As the first metal layer thickness D2During for 15nm, the peak wavelength of this light then red shift to 569nm, as shown in the dot-dash curve of Fig. 6 B.
Therefore, table 1-2 and Fig. 5 A-Fig. 6 B shows, the first metal layer and distance D of the second metal interlevel1The biggest, the peak wavelength of light is more toward red spectral band displacement；The first metal layer and distance D of the second metal interlevel1The least, the peak wavelength of light is more toward blue wave band displacement.Accordingly, coupling effect between the first metal layer and second metal level of this case, can make to be produced displacement by the peak wavelength of the light exciting misfit thing to send, if the peak wavelength of this light falls at the first scope (such as green light band, about 495nm-570nm) and this light cover visible-range, then this coupling effect can make the peak wavelength red shift of this light to the second scope (such as red spectral band, about 570nm-750nm) or it is blue shifted to the 3rd scope (such as blue wave band, about 380nm-495nm).
Then the thickness D of the first metal layer is adjusted with table 3-12 explanation2And the first metal layer and distance D of the second metal level1The relation of (namely carrier injection/transport layer, organic material layer and carrier injection/transport layer stack thickness) and the peak wavelength of light.It should be noted that, in table 3-5, the electron transport material used is respectively PO-T2T and TCTA with electricity hole transmission material, the peak wavelength exciting the light that misfit thing sent is about 530nm, and the material of the first metal layer used and the second metal level is respectively Al/Al, Ag/Ag, Au/Au in table 3-5.And in table 6-9, the peak wavelength exciting the light that misfit thing sent is about 630nm, such as use PO-T2T and NPNPB respectively as electron transport material and electricity hole transmission material, and the material of the first metal layer used and the second metal level is respectively Al/Al, Ag/Ag, Au/Au in table 6-8, table 6-8 lists and is set as the 1.75 red shift simulation results carried out with red spectral band (630nm), N (coefficient of refraction)/K (dissipation coefficient (extinctioncoefficient)) value.In table 10-12, exciting the peak wavelength of the light that misfit thing sent about between 570nm-750nm, and the material of the first metal layer used and the second metal level is respectively Al/Al, Ag/Ag, Au/Au.
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
| D1(nm) | Peak wavelength (nm) |
| 200 | 500 |
| 500 | 850 |
| 1000 | 1240 |
Table 10
Table 11
Table 12
From table 3-5, the thickness D of the first metal layer2Can adjust between 5nm-20nm, distance D between the first metal layer and the second metal level1Can adjust between 75nm-150nm.The first metal layer and distance D of the second metal interlevel1The biggest, and the thickness D of the first metal layer2The least, the peak wavelength of light more offsets so that light becomes HONGGUANG toward red spectral band；The first metal layer and distance D of the second metal interlevel1The least, and the thickness D of the first metal layer2The biggest, the peak wavelength of light more offsets so that light becomes blue light toward blue wave band.
From table 6-9, the thickness D of the first metal layer2Can adjust between 5nm-20nm, distance D between the first metal layer and the second metal level1Also can adjust between 150nm-500nm, even during 1000nm, this light can be moved near infrared band (being approximately less than 1240nm) from red spectral band (570nm-750nm).Especially from as shown in Table 9, when the first metal layer and distance D of the second metal interlevel1Being 200,500 or during 1000nm, light-emitting component can send peak wavelength and be positioned at the light of 500nm, 850nm or 1240nm.
From table 10-12, the thickness D of the first metal layer2Can adjust between 5nm-20nm, distance D between the first metal layer and the second metal level1Also can adjust between 30nm-75nm, this light can be moved near ultraviolet band (approximately more than 305nm) from red spectral band (570nm-750nm).
Additionally, refer to Fig. 7, the metal portion 31 and 32 in light-emitting component 300 may make up multiple periodic structure 30 so that peak wavelength produces gain at the light of different range.As it is shown in fig. 7, size W of periodic structure 30 between 40nm-437nm, periods lambda is between 50nm-965nm.It is to say, the respective width in metal portion 31 and 32 is all the width W of periodic structure 30, and the tail end from metal portion 31 is to the periods lambda that tail end is periodic structure 30 in metal portion 32.It should be noted that, although the external form of graphic middle this periodic structure of display is square wave, and only this case is not limiting as its shape.Thereby, excite light produced by misfit thing or via red shift produced by plasma-based coupling effect or the light after blue shift, gain can be produced by periodic structure 30.
Table 13-15 is respectively the relation of the periods lambda of the periodic structure of Al, Ag and Au, size W and applicable wavelengths.
Table 13
| Wavelength (nm) | 340 | 400 | 450 | 500 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 348 | 435 | 507 | 579 | 646 | 714 | 778 | 845 | 910 | 965 |
| Size (nm) | 170 | 208 | 237 | 268 | 298 | 327 | 345 | 383 | 411 | 437 |
Table 14
| Wavelength (nm) | 380 | 400 | 450 | 500 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 50 | 171 | 300 | 392 | 466 | 534 | 596 | 657 | 716 | 773 |
| Size (nm) | 40 | 124 | 189 | 229 | 267 | 300 | 334 | 365 | 398 | 429 |
Table 15
| Wavelength (nm) | 510 | 525 | 550 | 600 | 650 | 700 | 750 | 800 |
| Cycle (nm) | 62 | 223 | 462 | 462 | 545 | 615 | 680 | 738 |
| Size (nm) | 45 | 157 | 209 | 260 | 299 | 326 | 356 | 382 |
Refering to table 13-15 and Fig. 8 A and Fig. 8 B, wherein, curve shown in Fig. 8 A and Fig. 8 B represents Al, Ag and Au the most respectively, with material as Al and as a example by wavelength 550nm (green glow), when the periods lambda of this periodic structure 30 is 646nm and size W is 298nm, the light that peak wavelength can be made to be positioned at 550nm produces gain.With material as Ag and as a example by wavelength 450nm (blue light), when the periods lambda of this periodic structure 30 is 300nm and size W is 189nm, the light that peak wavelength can be made to be positioned at 450nm produces gain.With material as Au and as a example by wavelength 650nm (HONGGUANG), when the periods lambda of this periodic structure 30 is 545nm and size W is 299nm, the light that peak wavelength can be made to be positioned at 650nm produces gain, and as seen from Table 15, Au is relatively applicable to the gain of long wavelength.Therefore, the light that the periods lambda and size W by adjusting periodic structure 30 can make peak wavelength be positioned at certain wave band produces gain.
Additionally, above-mentioned light-emitting component 300 can be applicable to active-matrix Organic Light Emitting Diode (Active-matrixorganiclight-emittingdiode；AMOLED) display or passive-matrix Organic Light Emitting Diode (Passive-matrixorganiclight-emittingdiode；PMOLED) display.Refering to Fig. 9 A, light-emitting component 300 in the display of Fig. 9 A as a pixel 201, pixel 201 also includes tri-sub-pixel 201s of R, G, B, each sub-pixel 201s is all activated luminescence by thin film transistor (TFT) (TFT) 8, make pixel 201 can send red, green, blue, and the luminous ratio utilizing TFT to be electric current control adjustment tri-sub-pixel 201s of R, G, B more can adjust the glow color of each pixel 201 so that displayer can present dynamic color gray scale image.Seeing also Fig. 9 B, be to activate illumination mode with the difference of Fig. 9 A, passive-matrix organic light emitting diode display is to utilize negative electrode 6 and anode 7 to activate luminescence, and remaining feature is identical with Fig. 9 A.
Additionally, in other embodiments, the light-emitting component of this case all can be as one of them pixel of display, in other words, each pixel can include substrate, the first metal layer sequentially stacking on this substrate, organic material layer and the second metal level, wherein this first metal layer can be following one of which: the thickness of the first metal layer is zero, then this pixel can send light produced by organic material layer；The surface of this substrate, then light this pixel can send the light of a kind of wave band, i.e. red shift or blue shift after are completely covered the consistency of thickness of the first metal layer；The first metal layer includes the metal portion covering this surface of part of this substrate and exposes the peristome remaining this surface of this substrate, the then light after this pixel can send light produced by the light of two kinds of wave bands, i.e. organic material layer and red shift or blue shift；The first metal layer includes the metal portion at least two these surfaces covering this substrate, the then light after this pixel can send the light of two kinds of wave bands, i.e. red shift and blue shift；And the first metal layer includes the metal portion at least two these surfaces covering this substrate and is positioned at the peristome on this surface of part exposing this substrate between these two metal portions, light after then this pixel can send light, red shift and blue shift produced by the light of three kinds of wave bands, i.e. organic material layer.Such as, refer to Figure 10, the light-emitting component 500 of this case includes multiple pixel 10, each pixel 10 includes substrate 2, the first metal layer 3a, carrier injection/transport layer 41, organic material layer 42, carrier injection/transport layer 43 and the second metal level 5 sequentially stacked, and organic material layer 42 can send peak wavelength and be positioned at the light of the first scope.In each pixel 10, substrate 2, organic material layer 42 is identical with above-described embodiment those shown with the second metal level 5, and the first metal layer 3a can be following one of which: be completely covered consistency of thickness substrate 2 surface (as in Figure 10 from the left side calculate come second or six pixels), by adjust the first metal layer 3a thickness is the least or distance between the first metal layer 3a and the second metal level 5 is the biggest, the peak wavelength of this light can be made to the second scope from this first range displacement, or, by adjust the first metal layer 3a thickness is the biggest or distance between the first metal layer 3a and the second metal level 5 is the least, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；The first metal layer 3a has the metal portion on this surface of part covering substrate 2 and exposes the peristome (as calculated the 3rd pixel in Figure 10 from the left side) remaining this surface of substrate 2, by adjusting that the thickness in this metal portion is the least or distance between this metal portion and the second metal level 5 is the biggest, the peak wavelength of this light can be made to this second scope from this first range displacement, or, by adjusting that the thickness in this metal portion is the biggest or distance between this metal portion and the second metal level 5 is the least, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；The first metal layer 3a has the first metal portion and the second metal portion, by adjusting that the thickness in this first metal portion is the least or distance between this first metal portion and the second metal level 5 is the biggest, the peak wavelength of this light can be made to this second scope from this first range displacement, by adjusting that the thickness in this second metal portion is the biggest or distance between this second metal portion and the second metal level 5 is the least, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；The first metal layer 3a has the first metal portion, second metal portion and be formed at this surface of part exposing substrate 2 between this first metal portion and the second metal portion peristome (as in Figure 10 from the left side calculate come first or five pixels), by adjusting, the thickness in this first metal portion is the least or this first metal portion is the biggest with the distance of this second metal interlevel, the peak wavelength of this light can be made to this second scope from this first range displacement, by adjusting, the thickness in this second metal portion is the biggest or this second metal portion is the least with the distance of this second metal interlevel, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；And the thickness of the first metal layer 3a is will to maintain wavelength non-displacement originally time zero (as calculated the 4th pixel in Figure 10 from the left side).
In sum, the light-emitting component of this case does not include luminescent layer, only interacted by the electric hole transmission material contacted with each other in organic material layer and electron transport material and excite misfit thing with what generation can emit beam, thereby reduce cost of manufacture and operation, separately by the first and second metal level generation coupling effects of organic material layer upper and lower sides, peak wavelength red shift or the blue shift of the light exciting misfit thing can be made, blue-fluorescence/phosphorescent guest luminescent material is not used to send the light-emitting component of blue light to produce, red fluorescence/phosphorescent guest luminescent material is not used to send the light-emitting component of HONGGUANG, or do not use redness or blue-fluorescence/phosphorescent guest luminescent material to send the light-emitting component of white light.
Effect of above-described embodiment only illustrative this case, not for limiting this case, any those skilled in the art all modifying these embodiments above-mentioned under the spirit and the scope of this case and can change.Therefore the rights protection scope of this case, should be as listed by claims.
Claims (39)
1. a light-emitting component, is characterized by, this light-emitting component includes:
Substrate；
The first metal layer, it is formed on this substrate；
Second metal level, it is formed at above this first metal layer；And
Organic material layer, it is formed between this first metal layer and this second metal level and the electric hole transmission material that includes contacting with each other and electron transport material,
Wherein, this electricity hole transmission material and this electron transport material interact with produce can send peak wavelength be positioned at the first scope light excite misfit thing, and produce between this first metal layer with this second metal level and couple so that the peak wavelength displacement of this light, and adjust this first metal layer and the distance of this second metal interlevel or the thickness of this first metal layer, the peak wavelength of this light can be made to be moved to the second scope or the 3rd scope.
2. light-emitting component as claimed in claim 1, is characterized by, this substrate has a surface, and this first metal layer is formed on this substrate this surface of this substrate is completely covered.
3. light-emitting component as claimed in claim 1, it is characterized by, the thickness of this first metal layer is at 5nm-20nm, the distance of this first metal layer and this second metal interlevel is at 75nm-150nm, this first scope is at 495nm-570nm, and this second scope is at 570nm-750nm, and the 3rd scope is at 380nm-495nm, when the thickness of this first metal layer is the least or this first metal layer is the biggest with the distance of this second metal interlevel, the peak wavelength of this light from this first range displacement to this second scope；When the thickness of this first metal layer is the biggest or this first metal layer is the least with the distance of this second metal interlevel, the peak wavelength of this light from this first range displacement to the 3rd scope.
4. light-emitting component as claimed in claim 1, it is characterized by, the thickness of this first metal layer is at 5nm-20nm, and the distance of this first metal layer and this second metal interlevel is at 150nm-1000nm, and this first scope is at 570nm-750nm, this second scope is more than this first scope and less than 1240nm.
5. light-emitting component as claimed in claim 1, is characterized by, the thickness of this first metal layer is at 5nm-20nm, and the distance of this first metal layer and this second metal interlevel is at 30nm-75nm, then the 3rd scope is less than this first scope and more than 305nm.
6. light-emitting component as claimed in claim 1, it is characterized by, this first scope is at 495nm-570nm, this second scope is at 570nm-750nm, 3rd scope is at 380nm-495nm, and this first metal layer includes the first metal portion and the second metal portion, the thickness in this first metal portion adjusts between 5nm-20nm and the distance of this first metal portion and this second metal interlevel adjusts between 75nm-150nm, and the peak wavelength of this light can be made to this second scope from this first range displacement；The thickness in this second metal portion adjusts between 5nm-20nm and the distance of this second metal portion and this second metal interlevel adjusts between 75nm-150nm, can make the peak wavelength of this light from this first range displacement to the 3rd scope, and the thickness in this second metal portion more than the distance of the thickness in this first metal portion or this second metal portion and this second metal interlevel less than the distance in this first metal portion with this second metal interlevel.
7. light-emitting component as claimed in claim 1, is characterized by, the material of this substrate is glass, plastic cement or conducting metal oxide.
8. light-emitting component as claimed in claim 6, is characterized by, the thickness adjusting this organic material layer can adjust the distance in this first metal portion and the distance of this second metal interlevel and this second metal portion and this second metal interlevel.
9. light-emitting component as claimed in claim 1, is characterized by, this organic material layer includes being mixed, by this electricity hole transmission material and this electron transport material, the mixed layer constituted.
10. light-emitting component as claimed in claim 1, is characterized by, this organic material layer includes the electric hole transport layer being made up of this electricity hole transmission material and contact the electron transfer layer being arranged in this electricity hole transport layer and being made up of this electron transport material.
11. light-emitting components as claimed in claim 10, is characterized by, this substrate or this first metal layer are as anode, and this second metal level is as negative electrode；This electricity hole transport layer is adjacent to this first metal layer, and this electron transfer layer is adjacent to this second metal level.
12. light-emitting components as claimed in claim 1, is characterized by, this substrate or this first metal layer are as anode, and this second metal level is as negative electrode；It is formed with electricity hole implanted layer between this first metal layer and this organic material layer, and is formed with electron injecting layer between this second metal level and this organic material layer.
13. light-emitting components as claimed in claim 1, is characterized by, this first metal layer and this second metal level are made up of metal or nano-metal-oxide.
14. 1 kinds of light-emitting components, is characterized by, this light-emitting component includes:
Substrate, it has a surface；
The first metal layer, its be formed on this substrate and have the first metal portion, the second metal portion and between this first metal portion and the second metal portion and expose part this surface peristome；
Second metal level, it is formed at above this first metal layer；And
Organic material layer, it is formed between this first metal layer and this second metal level and covers this first metal portion, the second metal portion and this surface of part exposed by this peristome, this organic material layer also includes electric hole transmission material and the electron transport material contacted with each other
Wherein, this electricity hole transmission material and this electron transport material interact and produce can send peak wavelength be positioned at the first scope light excite misfit thing, and this first metal portion and this second metal level produce first and couples so that the peak wavelength of this light is from this first range displacement to the second scope, this second metal portion couple with this second metal level generation second so that the peak wavelength of this light from this first range displacement to the 3rd scope.
15. light-emitting components as claimed in claim 14, it is characterized by, this first scope is at 495nm-570nm, this second scope is at 570nm-750nm, 3rd scope is at 380nm-495nm, the thickness in this first metal portion adjusts between 5nm-20nm and the distance of this first metal portion and this second metal interlevel adjusts between 75nm-150nm, and the peak wavelength of this light can be made to the second scope from this first range displacement；The thickness in this second metal portion adjusts between 5nm-20nm and the distance of this second metal portion and this second metal interlevel adjusts between 75nm-150nm, can make the peak wavelength of this light from this first range displacement to the 3rd scope, and the thickness in this second metal portion more than the distance of the thickness in this first metal portion or this second metal portion and this second metal interlevel less than the distance in this first metal portion with this second metal interlevel.
16. light-emitting components as claimed in claim 14, it is characterized by, this first scope is green light band, this second scope is red spectral band, 3rd scope is blue wave band, with when this light-emitting component sends the white light being made up of green glow, HONGGUANG and blue light, the area being adjusted by the surface that this first metal portion covers the area on this surface, this second metal portion covers the area on this surface and this peristome exposes this part can change this green glow, this HONGGUANG and the ratio of this blue light.
17. luminescence components as claimed in claim 14, it is characterized by, this first scope is at 570nm-750nm, this second scope is more than this first scope and less than 1240nm, 3rd scope is less than this first scope and more than 305nm, the thickness in this first metal portion adjusts between 5nm-20nm and the distance of this first metal portion and this second metal interlevel adjusts between 150nm-1000nm, and the thickness in this second metal portion adjusts between 5nm-20nm and the distance of this second metal portion and this second metal interlevel adjusts between 30nm-75nm.
18. light-emitting components as claimed in claim 14, is characterized by, the material of this substrate is glass, plastic cement or conducting metal oxide.
19. light-emitting components as claimed in claim 14, is characterized by, this organic material layer includes being mixed, by this electricity hole transmission material and this electron transport material, the mixed layer constituted.
20. light-emitting components as claimed in claim 14, is characterized by, this organic material layer includes the electric hole transport layer being made up of this electricity hole transmission material and contact the electron transfer layer being arranged in this electricity hole transport layer and being made up of this electron transport material.
21. light-emitting components as claimed in claim 20, is characterized by, this substrate or this first metal layer are as anode, and this second metal level is as negative electrode；This electricity hole transport layer is adjacent to this first metal layer, and this electron transfer layer is adjacent to this second metal level.
22. light-emitting components as claimed in claim 14, is characterized by, this substrate or this first metal layer are as anode, and this second metal level is as negative electrode；It is formed with electricity hole implanted layer between this first metal layer and this organic material layer, and is formed with electron injecting layer between this second metal level and this organic material layer.
23. light-emitting components as claimed in claim 14, is characterized by, this first metal layer and this second metal level are to be made up of metal or nano-metal-oxide, and this first metal layer is patterned metal layer or grid-shaped metal layer.
24. light-emitting components as claimed in claim 14, it is characterized by, this the first metal portion and this second metal portion constitute multiple periodic structures, so that peak wavelength produces gain at the light of this first scope, the second scope or the 3rd scope, the size of this periodic structure between 40nm-437nm and cycle between 50nm-965nm.
25. 1 kinds of light-emitting components, is characterized by, this light-emitting component includes:
Substrate；
The first metal layer, it is formed on the substrate；
Second metal level, it is formed at above this first metal layer；
3rd metal level, it is formed at this second metal layer；
4th metal level, it is formed at the 3rd metal layer；
First organic material layer, it is formed between this first metal layer and this second metal level；
Second organic material layer, it is formed between this second metal level and the 3rd metal level；And
3rd organic material layer, it is formed between the 3rd metal level and the 4th metal level；
Wherein, this first organic material layer, this second organic material layer, 3rd organic material layer each includes electric hole transmission material and the electron transport material contacted with each other, and this electricity hole transmission material and this electron transport material interact produced by excite misfit thing can send peak wavelength to be positioned at the light of the first scope, so that this first organic material layer, this second organic material layer, 3rd organic material layer is each sent the first light, second light, the peak wavelength of the 3rd light is all in the range of first, produce between this second metal level with the 3rd metal level second couple so that the peak wavelength of this second light from this first range displacement to the second scope, and the 3rd produce between metal level and the 4th metal level the 3rd couple so that the peak wavelength of the 3rd light from this first range displacement to the 3rd scope.
26. light-emitting components as claimed in claim 25, it is characterized by, this first scope is at 495nm-570nm, and this second scope is at 570nm-750nm, 3rd scope is at 380nm-495nm, the thickness of this second metal level and the 3rd metal level is all at 5nm-20nm, and the distance of this second metal level and the 3rd metal interlevel is at 75nm-150nm, and the distance of the 3rd metal level and the 4th metal interlevel is at 75nm-150nm and less than the distance of this second metal level with the 3rd metal interlevel.
27. light-emitting components as claimed in claim 25, it is characterized by, this first scope is at 570nm-750nm, this second scope is more than this first scope and less than 1240nm, 3rd scope is less than this first scope and more than 305nm, the thickness of this second metal level and the 3rd metal level is all at 5nm-20nm, and the distance of this second metal level and the 3rd metal interlevel is at 150nm-1000nm, and the distance of the 3rd metal level and the 4th metal interlevel is at 30nm-75nm.
28. light-emitting components as claimed in claim 25, it is characterized by, the distance adjusting the thickness of this second metal level, the thickness of the 3rd metal level or this second metal level and the 3rd metal interlevel can change the numerical value of this second scope, and the distance adjusting the thickness of the 3rd metal level, the thickness of the 4th metal level or the 3rd metal level and the 4th metal interlevel can change the numerical value of the 3rd scope.
29. light-emitting components as claimed in claim 25, is characterized by, this substrate or this first metal layer are as anode, and the 4th metal level is as negative electrode.
30. light-emitting components as claimed in claim 25, is characterized by, this first metal layer, this second metal level, the 3rd metal level or the 4th metal level are to be made up of metal or nano-metal-oxide.
31. light-emitting components as claimed in claim 25, is characterized by, this first organic material layer, this second organic material layer, the 3rd organic material layer each include being mixed, by this electricity hole transmission material and this electron transport material, the mixed layer constituted.
32. light-emitting components as claimed in claim 25, it is characterized by, this first organic material layer, this second organic material layer, the 3rd organic material layer each include the electric hole transport layer being made up of this electricity hole transmission material and contact the electron transfer layer being arranged in this electricity hole transport layer and being made up of this electron transport material.
33. 1 kinds of light-emitting components, including multiple pixels, is characterized by, respectively this pixel includes:
Substrate, it has a surface；
The first metal layer, it is formed on this substrate；
Second metal level, it is formed at above this first metal layer；And
Organic material layer, it is formed between this first metal layer and this second metal level and includes electric hole transmission material and the electron transport material contacted with each other, and this electricity hole transmission material and this electron transport material interact with produce can send peak wavelength be positioned at the first scope light excite misfit thing, and produce across this first metal layer and this second metal level of this organic material layer and couple the peak wavelength displacement so that this light
Wherein, respectively this pixel be following one of them:
This first metal layer is completely covered this surface, by adjusting, the thickness of this first metal layer is the least or this first metal layer is the biggest with the distance of this second metal interlevel, the peak wavelength of this light can be made to this second scope from this first range displacement, or the thickness of this first metal layer is the biggest or this first metal layer is the least with the distance of this second metal interlevel by adjusting, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；
This first metal layer has the metal portion on this surface of covering part and exposes the peristome remaining this surface, by adjusting, the thickness in this metal portion is the least or this metal portion is the biggest with the distance of this second metal interlevel, the peak wavelength of this light can be made to this second scope from this first range displacement, or the thickness in this metal portion is the biggest or this metal portion is the least with the distance of this second metal interlevel by adjusting, the peak wavelength of this light can be made to the 3rd scope from this first range displacement；
This first metal layer has the first metal portion and the second metal portion covering this surface, by adjusting, the thickness in this first metal portion is the least or this first metal portion is the biggest with the distance of this second metal interlevel, the peak wavelength of this light can be made to this second scope from this first range displacement, by adjusting, the thickness in this second metal portion is the biggest or this second metal portion is the least with the distance of this second metal interlevel, and the peak wavelength of this light can be made to the 3rd scope from this first range displacement；And
This first metal layer has the first metal portion, the second metal portion and is formed at the peristome on this surface of exposed parts between this first metal portion and the second metal portion, by adjusting, the thickness in this first metal portion is the least or this first metal portion is the biggest with the distance of this second metal interlevel, the peak wavelength of this light can be made to this second scope from this first range displacement, by adjusting, the thickness in this second metal portion is the biggest or this second metal portion is the least with the distance of this second metal interlevel, and the peak wavelength of this light can be made to the 3rd scope from this first range displacement.
34. light-emitting components as claimed in claim 33, it is characterized by, this first scope is at 495nm-570nm, this second scope is at 570nm-750nm, 3rd scope is at 380nm-495nm, the thickness in this first metal layer, this first metal portion and this second metal portion adjusts between 5nm-20nm, and the distance of this first metal layer and this second metal interlevel, this first metal portion and this second metal interlevel and this second metal portion and this second metal interlevel adjusts between 75nm-150nm.
35. luminescence components as claimed in claim 33, it is characterized by, this first scope is at 570nm-750nm, this second scope is more than this first scope and less than 1240nm, 3rd scope is less than this first scope and more than 305nm, the thickness in this first metal portion adjusts between 5nm-20nm and the distance of this first metal portion and this second metal interlevel adjusts between 150nm-1000nm, and the thickness in this second metal portion adjusts between 5nm-20nm and the distance of this second metal portion and this second metal interlevel adjusts between 30nm-75nm.
36. light-emitting components as claimed in claim 33, is characterized by, this organic material layer includes being mixed, by this electricity hole transmission material and this electron transport material, the mixed layer constituted.
37. light-emitting components as claimed in claim 33, is characterized by, this organic material layer includes the electric hole transport layer being made up of this electricity hole transmission material and contact the electron transfer layer being arranged in this electricity hole transport layer and being made up of this electron transport material.
38. light-emitting components as claimed in claim 33, is characterized by, the material of this substrate is glass, plastic cement or conducting metal oxide.
39. light-emitting components as claimed in claim 31, is characterized by, this light-emitting component is passive-matrix Organic Light Emitting Diode or active-matrix Organic Light Emitting Diode.
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