CN110783471A - Perovskite quantum dot light-emitting device and preparation method thereof - Google Patents
Perovskite quantum dot light-emitting device and preparation method thereof Download PDFInfo
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- CN110783471A CN110783471A CN201910921175.9A CN201910921175A CN110783471A CN 110783471 A CN110783471 A CN 110783471A CN 201910921175 A CN201910921175 A CN 201910921175A CN 110783471 A CN110783471 A CN 110783471A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 144
- 238000002360 preparation method Methods 0.000 title description 6
- 239000011521 glass Substances 0.000 claims abstract description 91
- 239000000843 powder Substances 0.000 claims abstract description 55
- 229920000642 polymer Polymers 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000002994 raw material Substances 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 15
- 230000002194 synthesizing effect Effects 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000001354 calcination Methods 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 9
- 230000008025 crystallization Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002612 dispersion medium Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- -1 polyethylene Polymers 0.000 description 24
- 239000010410 layer Substances 0.000 description 17
- 239000002243 precursor Substances 0.000 description 7
- 229910052792 caesium Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- OXBLVCZKDOZZOJ-UHFFFAOYSA-N 2,3-Dihydrothiophene Chemical compound C1CC=CS1 OXBLVCZKDOZZOJ-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 229920000305 Nylon 6,10 Polymers 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical group [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 239000004203 carnauba wax Substances 0.000 description 2
- 235000013869 carnauba wax Nutrition 0.000 description 2
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229940049964 oleate Drugs 0.000 description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- Optics & Photonics (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Luminescent Compositions (AREA)
Abstract
The application discloses perovskite quantum dot light emitting device includes: the light conversion film layer comprises a polymer and perovskite quantum dot glass powder dispersed in the polymer. The application utilizes the glass powder body inlaid with the perovskite quantum dots and the polymer as the light conversion film layer, and can effectively reduce the influence of water vapor, oxygen, heat and the like in the external environment on the light emitting performance of the perovskite quantum dot material, so that the light emitting device based on the perovskite quantum dots has extremely high stability, stable light emission and long service life.
Description
Technical Field
The application belongs to the field of semiconductor illumination, and particularly relates to a perovskite quantum dot light-emitting device and a preparation method thereof.
Background
In the prior art, quantum dots are applied to the backlight technology by adopting an On-Chip packaging mode, the light utilization rate is high, the quantum dot material is saved most, and the cost is low.
In a common quantum dot light-emitting device, polymers dispersed with quantum dot materials are usually directly used as a light conversion film layer, the polymers have limited protective effect on quantum dots, and heat generated by a light-emitting source often has adverse effect on the stability of the quantum dots, so that the quantum dot light-emitting device has unstable light emission and poor performance. Especially for the light-emitting device based on the perovskite quantum dots, the perovskite quantum dots are easily affected by oxygen, water vapor and other factors in the external environment, so that the structure of the perovskite quantum dots is decomposed and damaged, the light-emitting efficiency is reduced, the service life is shortened, and the perovskite quantum dot light-emitting device is easy to lose efficacy due to the influence.
Accordingly, there is a need for improvements in the art.
Disclosure of Invention
In view of the above technical problems, an object of the present application is to provide a highly stable perovskite quantum dot light emitting device and a method for manufacturing the same.
According to an aspect of the present application, there is first disclosed a perovskite quantum dot light emitting device comprising:
a light emitting unit;
the light conversion film layer is arranged in the light emitting direction of the light emitting unit and used for receiving the light emitted by the light emitting unit;
the light conversion film layer comprises a polymer and perovskite quantum dot glass powder dispersed in the polymer, and the perovskite quantum dot glass powder comprises a glass matrix and perovskite quantum dots uniformly distributed in the glass matrix.
Furthermore, the particle size of the perovskite quantum dot glass powder is 50 nm-500 mu m.
According to another aspect of the present application, there is also disclosed a method of manufacturing a perovskite quantum dot light emitting device, comprising the steps of:
s1, providing perovskite quantum dot glass powder;
s2, uniformly mixing the perovskite quantum dot glass powder with a dispersion medium to obtain a dispersion system containing the perovskite quantum dot glass powder;
and S3, arranging the dispersion system on a light-emitting unit, and curing to form a light conversion film layer to obtain the perovskite quantum dot light-emitting device.
Further, the S1 includes the steps of:
s1-1, mixing raw material components required by synthesizing the perovskite quantum dots with raw material components required by synthesizing a glass matrix, and preparing a glass block containing the perovskite quantum dots by a hot melting method;
s1-2, crushing the glass block containing the perovskite quantum dots to obtain the perovskite quantum dot glass powder.
Further, in S1-1, raw material components required for synthesizing the perovskite quantum dots are mixed with raw material components required for synthesizing the glass matrix, and the glass block containing the perovskite quantum dots is obtained through the processes of calcination melting, annealing forming and crystallization.
Further, the temperature of the calcination melting is 1000-1300 ℃, the temperature of the annealing forming is 350-500 ℃, and the temperature of the crystallization is 400-600 ℃.
Further, in the step S1-2, the glass block containing the perovskite quantum dots is first crushed and then further ground to obtain the perovskite quantum dot glass powder.
Furthermore, the particle size of the perovskite quantum dot glass powder is 50 nm-500 mu m.
Furthermore, the perovskite quantum dot glass powder accounts for 5-50 wt% of the dispersion system in terms of mass fraction.
Has the advantages that:
the application utilizes the glass powder body inlaid with the perovskite quantum dots and the polymer as the light conversion film layer, and can effectively reduce the influence of water vapor, oxygen, heat and the like in the external environment on the light emitting performance of the perovskite quantum dot material, so that the light emitting device based on the perovskite quantum dots has extremely high stability, stable light emission and long service life. In addition, the perovskite quantum dot glass powder can also be directly used as light diffusion particles in the light conversion film layer, so that the luminous efficiency of the perovskite quantum dot light-emitting device is further improved.
Detailed Description
The technical solutions in the examples of the present application will be described in detail below with reference to the embodiments of the present application. It should be noted that the described embodiments are only some embodiments of the present application, and not all embodiments.
In accordance with a preferred embodiment of the present application, there is first disclosed a perovskite quantum dot light emitting device comprising:
a light emitting unit;
the light conversion film layer is arranged in the light emitting direction of the light emitting unit and used for receiving the light emitted by the light emitting unit;
the light conversion film layer comprises a polymer and perovskite quantum dot glass powder dispersed in the polymer, and the perovskite quantum dot glass powder comprises a glass substrate and perovskite quantum dots uniformly distributed in the glass substrate.
In the present application, the light emitting unit may be an LED, an OLED, a QLED, a fluorescent lamp, or the like, and the present application is not limited to the kind of the light emitting unit.
In a preferred embodiment of the present application, the particle size of the perovskite quantum dot glass powder is 50nm to 500 μm.
In a specific embodiment, the particle size of the perovskite quantum dot glass powder is 100 nm-50 μm.
In a preferred embodiment herein, the polymer may be an ethylene-based polymer, a propylene-based polymer, a thiolene polymer, an acrylate polymer, a urethane polymer, a carbonate polymer, an epoxy polymer, a silicone polymer, and combinations thereof. However, the exemplary embodiments of the present application are not limited thereto.
In a particular embodiment, the polymer can be polyethylene, polyvinylidene fluoride, polyvinyl butyral, polyvinyl alcohol, polystyrene, polypropylene, polymethyl acrylate, polymethyl methacrylate, polydecylformamide, polyhexamethylene sebacamide, polyethylene terephthalate, glycol-modified polyethylene terephthalate, polyethylene naphthalate, polycarbonate, cellulose acetate butyrate, carnauba wax, polymethylphenylsilicone, polydimethylsiloxane, and the like.
According to the perovskite quantum dot light-emitting device, the perovskite quantum dots are firstly embedded in the glass substrate to obtain the perovskite quantum dot glass powder, then the glass powder and the polymer are used as the light conversion film layer, the influence of water vapor, oxygen, heat and the like in the external environment on the light-emitting performance of the perovskite quantum dot material can be effectively reduced, and therefore the perovskite quantum dot-based light-emitting device has extremely high stability, stable light emission and long service life. The inventor finds that the perovskite quantum dot glass powder can also be directly used as light diffusion particles in a light conversion film layer, so that the light emitting efficiency of the perovskite quantum dot light emitting device is improved.
In a preferred embodiment of the present application, the light emitting unit is an LED chip, the LED chip is disposed on a base, the base carries the LED chip, and a protective layer may be further disposed on a surface of the light conversion film layer away from the LED chip, wherein a material of the protective layer includes, but is not limited to, at least one of silicone, epoxy, polyurethane, silica, and alumina. The inventors found that the protective layer can effectively reduce the adverse effect of the external environment on the light emitting device, thereby further improving the light emitting stability of the perovskite quantum dot light emitting device.
According to a preferred embodiment of the present application, there is also disclosed a method of manufacturing a perovskite quantum dot light-emitting device, comprising the steps of:
s1, providing perovskite quantum dot glass powder;
s2, uniformly mixing the perovskite quantum dot glass powder with a dispersion medium to obtain a dispersion system containing the perovskite quantum dot glass powder;
and S3, arranging the dispersion system on the light-emitting unit, and curing to form a light conversion film layer to obtain the perovskite quantum dot light-emitting device.
In a preferred embodiment of the present application, S1 includes the steps of:
s1-1, mixing raw material components required by synthesizing the perovskite quantum dots with raw material components required by synthesizing a glass matrix, and preparing a glass block containing the perovskite quantum dots by a hot melting method;
and S1-2, crushing the glass block containing the perovskite quantum dots to obtain the perovskite quantum dot glass powder.
In a preferred embodiment of the present application, the raw material components required for the synthesis of perovskite quantum dots comprise a first precursor and a second precursor, wherein the first precursor is formed from Cs
+With at least one of a carboxylic acid anion, a carbonic acid anion or a halogen anion, the second precursor consisting of Pb
2+Or Sn
2+And at least one of carboxylic acid anion, oxygen ion or halogen anion.
In a preferred embodiment of the present application, the first precursor is selected from at least one of cesium carboxylate, cesium carbonate, cesium halide. Specifically, the first precursor is selected from cesium oleate, CsCl, CsBr, CsI, Cs
2CO
3At least one of (1). However, the exemplary embodiments of the present application are not limited thereto.
In a preferred embodiment of the present application, the second precursor is selected from PbCl
2、PbI
2、PbBr
2、SnCl
2、SnI
2、SnBr
2At least one of PbO and SnO. However, the exemplary embodiments of the present application are not limited thereto.
In a preferred embodiment of the present application, the raw material components required for synthesizing the perovskite quantum dots further comprise an additive, wherein the structural general formula of the additive is MX.
In a specific embodiment, M is a first main group metal element and comprises at least one of Na, K, Rb and Cs, and X is at least one of halide anions. Specifically, the additive is selected from at least one of NaBr, KBr, RbBr and CsBr.
In a preferred embodiment of the present application, the raw material components required for the synthesis of the glass matrix comprise SiO
2、B
2O
3、ZnO、MgO、Al
2O
3、PbO、SbO
2、P
2O
5、TeO
2、GeO
2、、Na
2O、K
2O、Li
2O, CaO, SrO, BaO, etc.
In a preferred embodiment of the present application, in S1-1, raw material components required for synthesizing perovskite quantum dots are mixed with raw material components required for synthesizing a glass matrix, and through calcination melting, annealing molding and crystallization processes, a glass block containing perovskite quantum dots is obtained.
In a preferred embodiment of the present application, the temperature for melting by calcination is 1000 to 1300 ℃, the temperature for annealing and forming is 350 to 500 ℃, and the temperature for crystallization is 400 to 600 ℃. Specifically, the temperature of calcination melting is 1100-1250 ℃, the temperature of annealing forming is 400-500 ℃, and the temperature of crystallization is 450-600 ℃.
In a specific embodiment, in S1-1, raw material components required for synthesizing perovskite quantum dots and raw material components required for synthesizing a glass substrate are fully mixed and uniformly ground, then are calcined and melted at 1100-1250 ℃ for at least 10min in a muffle furnace or a lifting furnace, then a calcined liquid is poured on an iron plate for shaping, then are transferred into the muffle furnace again for annealing at 350-500 ℃ for 1-6 h, and finally a crystallization process is completed at 450-600 ℃, so that a glass block containing the perovskite quantum dots is finally obtained.
In a preferred embodiment of the present application, in S1-2, a glass block containing perovskite quantum dots is first crushed and then further ground to obtain perovskite quantum dot glass powder.
In a specific example, in S1-2, the glass block containing the perovskite quantum dots is crushed, for example, the glass block containing the perovskite quantum dots is crushed into small particles in a crusher, then further ground by a ball mill, and finally finely ground into uniform perovskite quantum dot glass powder in an agate mortar.
In a preferred embodiment of the present application, the particle size of the perovskite quantum dot glass powder is 50nm to 500 μm. Specifically, the particle size of the perovskite quantum dot glass powder is 100 nm-100 mu m.
In a preferred embodiment of the present application, the perovskite quantum dot glass powder accounts for 5 wt% to 50 wt% of the dispersion system in terms of mass fraction. Specifically, the perovskite quantum dot glass powder accounts for 10 wt% -30 wt% of the dispersion system in terms of mass fraction.
In the application, the inventor finds that the mass ratio of the perovskite quantum dot glass powder has a key effect on the stability and the luminescence performance of the perovskite quantum dot composite film. If the mass ratio of the perovskite quantum dot glass powder is too low, the water oxygen barrier property of the perovskite quantum dot composite film is poor, and the luminous brightness is low; if the mass ratio of the perovskite quantum dot glass powder is too high, the uniformity of a dispersion system comprising the perovskite quantum dot glass powder can be influenced, and the film forming uniformity and the light emitting brightness of the perovskite quantum dot composite film can be further influenced.
In a preferred embodiment of the present application, the dispersion medium includes at least one of a monomer and a resin.
In a preferred embodiment of the present application, the dispersion medium is an ultraviolet light curing glue.
In a specific embodiment, the UV curable adhesive is composed of a prepolymer, a reactive monomer, and a photoinitiator.
In a specific embodiment, the ultraviolet curing glue also contains an auxiliary agent.
In a preferred embodiment herein, the dispersion medium is a polymer, specifically including vinyl polymers, propylene-based polymers, thiolene polymers, acrylate polymers, urethane polymers, carbonate polymers, epoxy polymers, silicone polymers, and combinations thereof.
In a particular embodiment, the polymer can be polyethylene, polyvinylidene fluoride, polyvinyl butyral, polyvinyl alcohol, polystyrene, polypropylene, polymethyl acrylate, polymethyl methacrylate, polydecylformamide, polyhexamethylene sebacamide, polyethylene terephthalate, glycol-modified polyethylene terephthalate, polyethylene naphthalate, polycarbonate, cellulose acetate butyrate, carnauba wax, polymethylphenyl silicone, polydimethylsiloxane, and the like. However, the exemplary embodiments of the present application are not limited thereto.
The perovskite quantum dot light-emitting device obtained by the preparation method is stable in light emission, long in service life and high in light-emitting efficiency.
Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. However, they are exemplary embodiments of the present invention, and the present invention is not limited thereto.
Examples
A perovskite quantum dot light emitting device comprising:
a base;
the base bears the LED chip;
the light conversion film layer comprises a polymer and perovskite quantum dot glass powder dispersed in the polymer, is arranged in the light emergent direction of the LED chip and is used for receiving light rays emitted by the LED chip;
the perovskite quantum dot glass powder comprises a glass matrix and CsPbBr uniformly distributed in the glass matrix
3The average grain diameter of the perovskite quantum dot glass powder is 5 mu m.
The preparation method of the perovskite quantum dot light-emitting device comprises the following steps:
s1, providing perovskite quantum dot glass powder:
s1-1, adding cesium oleate and PbBr
2、KBr、P
2O
5Fully mixing MgO, uniformly grinding, calcining and melting at 1200 ℃ in a muffle furnace for 10min, then pouring the calcining liquid on an iron plate for shaping, then transferring the calcined liquid into the muffle furnace again for annealing at 450 ℃ for 3h, and finally finishing the crystallization process at 500 ℃ to obtain the CsPbBr-containing material
3A glass block of quantum dots;
s1-2, will contain CsPbBr
3Putting the glass blocks of the quantum dots into a crusher, crushing the glass blocks into small particles, further grinding the small particles by a ball mill, and finally finely grinding the small particles into uniform perovskite quantum dot glass powder in an agate mortar;
s2, mixing the perovskite quantum dot glass powder of S1 with polyethylene resin to obtain a dispersion system comprising the perovskite quantum dot glass powder, wherein the perovskite quantum dot glass powder accounts for 25 wt% of the dispersion system;
and S3, dot coating the dispersion system of the S2 on an LED chip, and curing to form a light conversion film layer, thereby obtaining the perovskite quantum dot light-emitting device.
The perovskite quantum dot light-emitting device is stable in light emission and can keep good light emission intensity after long-time work.
Comparative example
A perovskite quantum dot light emitting device comprising:
a base;
the base bears the LED chip;
a light conversion film layer comprising a polymer and CsPbBr dispersed in the polymer
3And the quantum dots are arranged in the light emitting direction of the LED chip and used for receiving the light emitted by the LED chip.
The preparation method of the perovskite quantum dot light-emitting device comprises the following steps:
s1, mixing CsPbBr
3Mixing and uniformly stirring the toluene dispersion liquid of the quantum dots and an ultraviolet curing adhesive Ergo 8500, and then, standing for 30min under a vacuum environment of 0.1torr to remove the solvent to obtain a perovskite quantum dot film-forming glue solution;
and S2, spreading the film-forming glue solution of S1 on an LED chip, and curing to form a light conversion film layer, thus obtaining the perovskite quantum dot light-emitting device.
The perovskite quantum dot light-emitting device starts to reduce the light-emitting intensity after being lighted for 72 hours, and the light-emitting device fails after being operated for a long time.
As can be seen from the above embodiments, in the present application, the perovskite quantum dots are first embedded in the glass matrix to obtain the perovskite quantum dot glass powder, and then the perovskite quantum dot glass powder and the polymer are used as the light conversion film layer to obtain the perovskite quantum dot light emitting device. Compared with a comparative example, the perovskite quantum dot light-emitting device has stable light emission and meets the requirements of market application.
Although the present disclosure has been described and illustrated in greater detail by the inventors, it should be understood that modifications and/or alterations to the above-described embodiments, or equivalent substitutions, will be apparent to those skilled in the art without departing from the spirit of the disclosure, and that no limitations to the present disclosure are intended or should be inferred therefrom.
Claims (9)
1. A perovskite quantum dot light emitting device comprising:
a light emitting unit; and
the light conversion film layer is arranged in the light emitting direction of the light emitting unit and used for receiving the light emitted by the light emitting unit;
the light conversion film layer is characterized by comprising a polymer and perovskite quantum dot glass powder dispersed in the polymer, wherein the perovskite quantum dot glass powder comprises a glass substrate and perovskite quantum dots uniformly distributed in the glass substrate.
2. The perovskite quantum dot light-emitting device according to claim 1, wherein the particle size of the perovskite quantum dot glass powder is 50nm to 500 μm.
3. A method for preparing a perovskite quantum dot light-emitting device is characterized by comprising the following steps:
s1, providing perovskite quantum dot glass powder;
s2, uniformly mixing the perovskite quantum dot glass powder with a dispersion medium to obtain a dispersion system containing the perovskite quantum dot glass powder;
and S3, arranging the dispersion system on a light-emitting unit, and curing to form a light conversion film layer to obtain the perovskite quantum dot light-emitting device.
4. The method for producing a perovskite quantum dot light-emitting device according to claim 3, wherein the S1 comprises the steps of:
s1-1, mixing raw material components required by synthesizing the perovskite quantum dots with raw material components required by synthesizing a glass matrix, and preparing a glass block containing the perovskite quantum dots by a hot melting method;
s1-2, crushing the glass block containing the perovskite quantum dots to obtain the perovskite quantum dot glass powder.
5. The method for producing a perovskite quantum dot light-emitting device according to claim 4, wherein in S1-1, raw material components required for synthesizing perovskite quantum dots are mixed with raw material components required for synthesizing a glass matrix, and a glass block containing the perovskite quantum dots is obtained through calcination melting, annealing molding and crystallization processes.
6. The method for producing a perovskite quantum dot light-emitting device according to claim 5, wherein the temperature of the calcination melting is 1000 to 1300 ℃, the temperature of the annealing molding is 350 to 500 ℃, and the temperature of the crystallization is 400 to 600 ℃.
7. The method for producing a perovskite quantum dot light-emitting device according to claim 4, wherein in S1-2, the perovskite quantum dot-containing glass bulk is crushed and then further ground to obtain the perovskite quantum dot glass powder.
8. The method for producing a perovskite quantum dot light-emitting device according to any one of claims 3 to 7, wherein the particle diameter of the perovskite quantum dot glass powder is 50nm to 500 μm.
9. The method for producing a perovskite quantum dot light-emitting device according to claim 3, wherein the perovskite quantum dot glass powder accounts for 5 to 50 wt% of the dispersion system in terms of mass fraction.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112745831A (en) * | 2020-12-25 | 2021-05-04 | 温州大学 | PVB cladding CsPbBr3Preparation method of quantum dot thin film material |
| CN112852158A (en) * | 2021-01-04 | 2021-05-28 | 福建师范大学 | Perovskite quantum dot glass film and preparation method and application thereof |
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2019
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112745831A (en) * | 2020-12-25 | 2021-05-04 | 温州大学 | PVB cladding CsPbBr3Preparation method of quantum dot thin film material |
| CN112745831B (en) * | 2020-12-25 | 2022-12-23 | 温州大学 | PVB cladding CsPbBr 3 Preparation method of quantum dot film material |
| CN112852158A (en) * | 2021-01-04 | 2021-05-28 | 福建师范大学 | Perovskite quantum dot glass film and preparation method and application thereof |
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