CN110783426A - Method for manufacturing embedded optical communication module - Google Patents
Method for manufacturing embedded optical communication module Download PDFInfo
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- CN110783426A CN110783426A CN201910924288.4A CN201910924288A CN110783426A CN 110783426 A CN110783426 A CN 110783426A CN 201910924288 A CN201910924288 A CN 201910924288A CN 110783426 A CN110783426 A CN 110783426A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 238000004891 communication Methods 0.000 title claims abstract description 28
- 230000017525 heat dissipation Effects 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims description 46
- 238000001259 photo etching Methods 0.000 claims description 23
- 238000009713 electroplating Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000013307 optical fiber Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
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- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
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- 210000000813 small intestine Anatomy 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses a method for manufacturing an embedded optical communication module, which specifically comprises the following steps: 101) a base adapter plate manufacturing step, 102) a heat dissipation adapter plate manufacturing step, 103) a base bonding step, 104) a cover adapter plate manufacturing step, and 105) a molding step; the invention discloses a method for manufacturing an embedded optical communication module, which is characterized in that a photoelectric conversion chip is embedded into a heat dissipation adapter plate provided with a liquid-phase heat dissipation channel, and then a sealing cover is additionally arranged on the front surface of a base, so that the photoelectric conversion chip has higher heat dissipation capability in the module and can work in a closed environment.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of an embedded optical communication module.
Background
Generally, loads carried by satellites include phased array radars, high-definition cameras, inertial navigation and various sensors, the requirement for the data transmission rate is gradually increased along with the gradual improvement of the load performance, and optical fiber data transmission becomes a good substitute for high-frequency cables in data transmission due to the advantages of light weight, good electromagnetic shielding property, large communication capacity, easiness in multiplexing and integration and the like.
In certain specific environments, severe over-temperature or over-temperature conditions and unknown radiation can seriously affect the induction and transmission of photons in the optical fiber by the optical chip, and even cause fatal damage to the optical chip which operates at high speed. Such an optical module is generally made of a radiation-resistant optical fiber, but for an optical chip, it is necessary to protect the optical chip by a sealing process so that the optical chip has functions of heat insulation, freeze prevention, radiation protection and the like.
In the traditional sealing process, the photoelectric chip is fixed on the base in a bonding mode no matter in a ceramic tube shell or a metal shell, so that the optical fiber is required to be perpendicular to the photoelectric chip, and for the photoelectric module, a part of structure needs to be placed in parallel with the surface of the chip, so that the practical application which can be met by the structure which can only be placed vertically is small.
In the short distance optical transmission device, multichannel array transmission is becoming more and more mainstream, mainly because multichannel array transmission can integrate devices such as a certain amount of lasers, photoelectric sensing ware, stride to put, limit is put, can integrate more photoelectric conversion unit in comparatively little region to this promotes the signal transmission efficiency of whole array. However, as the requirement of the optical fiber bandwidth is increased, the heat productivity of the laser for realizing the high-power laser is also increased, and the heat dissipation capability of the whole array needs to be considered when the laser array is manufactured.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a manufacturing method of an embedded optical communication module.
The technical scheme of the invention is as follows:
a method for manufacturing an embedded optical communication module specifically comprises the following steps:
101) a base adapter plate manufacturing step: the upper surface of the base adapter plate is subjected to dry etching to form a cavity by a dry etching process, wherein the local part is processed in a wet etching mode; depositing silicon oxide or silicon nitride on the upper surface of the base adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the base adapter plate;
through metal wiring, the photoelectric conversion chip embedded in the cavity is communicated with the RDL manufactured on the surface of the base adapter plate through a welding process or an adhesive process; wherein, the bottom of the photoelectric conversion chip is pasted with solder;
thinning the lower surface of the base adapter plate, wherein the thinning thickness is 10um to 700 um; depositing silicon oxide or silicon nitride on the lower surface of the base adapter plate to form an insulating layer, and manufacturing a bonding pad on the insulating layer on the lower surface of the base adapter plate through photoetching and electroplating processes;
102) the manufacturing steps of the heat dissipation adapter plate are as follows: manufacturing a groove on the upper surface of the heat dissipation adapter plate by photoetching and etching processes; depositing silicon oxide or silicon nitride on the upper surface of the heat dissipation adapter plate to form an insulating layer, and manufacturing a bonding pad on the upper surface of the heat dissipation adapter plate through photoetching and electroplating processes;
103) a base bonding step: bonding the heat dissipation adapter plate and the base adapter plate to form a base through a welding process, wherein the welding temperature is controlled below 280 ℃;
104) a cover adapter plate manufacturing step: depositing an insulating layer on the upper surface of the cover adapter plate, and manufacturing a bonding pad on the insulating layer through photoetching and electroplating processes; manufacturing TSV holes in the upper surface of the sealing cover adapter plate through photoetching and etching processes, and thinning the lower surface of the sealing cover adapter plate to expose the TSV holes;
105) a forming step: bonding the cover adapter plate and the base through a welding process to form an optical communication module; cutting the bonded optical communication module, mounting the optical communication module on a PCB, and vertically mounting the optical communication module on a terminal structure to obtain the terminal structure with the embedded optical communication module; the upper surface of the optical communication module is communicated with the optical fiber through the TSV hole, and the optical fiber is sealed.
Furthermore, the RDL manufacturing process comprises RDL wiring and a bonding PAD, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, and the chip PAD is exposed by photoetching and dry etching; RDL wiring arrangement is carried out through photoetching and electroplating processes, wherein the RDL wiring is formed by mixing one or more of copper, aluminum, nickel, silver, gold and tin, and is structurally in a one-layer or multi-layer structure, and the thickness range is 10nm to 1000 um; and manufacturing a bonding metal to form a bonding pad by photoetching and electroplating processes, wherein the windowing diameter of the bonding pad is between 10um and 10000 um.
Furthermore, an insulating layer covers the surface of the RDL, and the bonding pad is exposed through a windowing process.
Further, the thickness of the insulating layer ranges from 10nm to 100 um; the seed layer has one or more layers with thickness of 1 nm-100 um, and is made of one or more of Ti, Cu, Al, Ag, Pd, Au, Tl, Sn and Ni.
Further, the width of the groove ranges from 1um to 1000um, and the depth ranges from 1um to 500 um.
Compared with the prior art, the invention has the advantages that: the photoelectric conversion chip is embedded into the heat dissipation adapter plate provided with the liquid-phase heat dissipation channel, and then the sealing cover is additionally arranged on the front surface of the base, so that the photoelectric conversion chip in the module is ensured to have high heat dissipation capacity and can work in a closed environment.
Drawings
FIG. 1 is a schematic view of a cavity formed in a base adapter plate according to the present invention;
FIG. 2 is a schematic diagram of the photoelectric conversion chip and the RDL of FIG. 1 according to the present invention;
FIG. 3 is a schematic view of the invention with bond pads disposed on FIG. 2;
FIG. 4 is a schematic view of a heat sink adapter plate of the present invention with a groove formed therein;
FIG. 5 is a bonding schematic of FIG. 3 and FIG. 4 according to the present invention;
FIG. 6 is a schematic diagram of a cover adapter plate with TSV holes formed therein according to the present invention;
FIG. 7 is a schematic view of the thinning of FIG. 6 according to the present invention;
FIG. 8 is a bonding diagram of FIGS. 5 and 7 according to the present invention;
FIG. 9 is a schematic view of the present invention shown in FIG. 8 disposed on a PCB board;
FIG. 10 is a schematic view of the present invention.
The labels in the figure are: the optical module comprises a base adapter plate 101, a cavity 102, a photoelectric conversion chip 103, an RDL104, a bonding pad 105, a groove 106, a TSV hole 107, a cover adapter plate 108, a PCB plate 109 and an optical fiber 110.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
Example (b):
as shown in fig. 1 to 10, a method for manufacturing an embedded optical communication module includes the following steps:
101) the manufacturing steps of the base adapter plate 101 are as follows: the upper surface of the base adapter plate 101 is dry-etched to form a cavity 102 by a dry etching process, wherein the local part is processed by wet etching, the depth of the cavity 102 ranges from 100nm to 700um, the cavity can be square, circular, oval, triangular and the like, and the side wall can be vertical or inclined. And depositing silicon oxide or silicon nitride on the upper surface of the base adapter plate 101, or directly thermally oxidizing to form an insulating layer, wherein the thickness of the insulating layer ranges from 10nm to 100 um. Manufacturing a seed layer above the insulating layer by a physical sputtering, magnetron sputtering or evaporation process; the thickness of the seed layer ranges from 1nm to 100um, the structure of the seed layer can be one layer or a plurality of layers, and the material can be one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin, nickel and the like. The RDL104 is formed on the upper surface of the base adapter plate 101. The RDL104 manufacturing process comprises RDL wiring and a bonding PAD, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, and a chip PAD is exposed by photoetching and dry etching; RDL wiring arrangement is carried out through photoetching and electroplating processes, wherein the RDL wiring is formed by mixing one or more of copper, aluminum, nickel, silver, gold and tin, and is structurally in a one-layer or multi-layer structure, and the thickness range is 10nm to 1000 um; and manufacturing a bonding metal to form a bonding pad by photoetching and electroplating processes, wherein the windowing diameter of the bonding pad is between 10um and 10000 um. An insulating layer may be further coated on the surface of RDL104, and the bonding pads are exposed through a windowing process.
The photoelectric conversion chip 103 embedded in the cavity 102 is communicated with the RDL104 formed on the surface of the base adapter plate 101 through a metal wiring process by a welding process or an adhesive process; wherein, solder paste is pasted on the bottom of the photoelectric conversion chip 103.
Thinning the lower surface of the base adapter plate 101 to a thickness of 10um to 700 um; silicon oxide or silicon nitride is deposited on the lower surface of the base adapter plate 101 to form an insulating layer, and a bonding pad 105 is formed on the insulating layer on the lower surface of the base adapter plate 101 through photolithography and electroplating processes.
Unless otherwise indicated, all types of structures identified above are identified by the same name and have the same dimensions, and all corresponding structures identified below are identified by the same name and have the same dimensions within the same range, and all processes identified by the same name and without any particular indication are also identified by the same name and without any particular indication.
102) The manufacturing steps of the heat dissipation adapter plate are as follows: manufacturing a groove 106 on the upper surface of the heat dissipation adapter plate by photoetching and etching processes; silicon oxide or silicon nitride is deposited on the upper surface of the heat dissipation adapter plate to form an insulating layer, and a bonding pad 105 is manufactured on the upper surface of the heat dissipation adapter plate through photoetching and electroplating processes. Wherein, the width range of the groove 106 is between 1um to 1000um, and the depth is between 1um to 500 um; the groove 106 is filled with heat dissipation liquid, and the groove 106 is formed in a small intestine shape, so that a better heat dissipation effect can be realized.
103) A base bonding step: the heat dissipation adapter plate and the base adapter plate 101 are bonded to form a base through a welding process, and the welding temperature is controlled to be below 280 ℃.
104) The manufacturing steps of the cover adapter plate 108 are as follows: depositing an insulating layer on the upper surface of the cover adapter plate 108, and manufacturing a bonding pad 105 on the insulating layer through photoetching and electroplating processes; through photoetching and etching processes, TSV holes 107 are formed in the upper surface of the sealing cover adapter plate 108, and the lower surface of the sealing cover adapter plate 108 is thinned to expose the TSV holes 107. Wherein, TSV hole 107 diameter range is between 1um to 1000um, and the degree of depth is between 10um to 1000 um.
105) A forming step: bonding the cover adapter plate 108 and the base through a welding process to form an optical communication module; cutting the bonded optical communication module, mounting the optical communication module on the PCB 109, and vertically mounting the optical communication module on the terminal structure to obtain the terminal structure with the embedded optical communication module; the optical fiber 110 is led into the upper surface of the optical communication module through the TSV hole 107, and the optical fiber 110 is sealed.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (5)
1. A method for manufacturing an embedded optical communication module is characterized in that: the method specifically comprises the following steps:
101) a base adapter plate manufacturing step: the upper surface of the base adapter plate is subjected to dry etching to form a cavity by a dry etching process, wherein the local part is processed in a wet etching mode; depositing silicon oxide or silicon nitride on the upper surface of the base adapter plate, or directly thermally oxidizing to form an insulating layer, and manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process; manufacturing an RDL on the upper surface of the base adapter plate;
through metal wiring, the photoelectric conversion chip embedded in the cavity is communicated with the RDL manufactured on the surface of the base adapter plate through a welding process or an adhesive process; wherein, the bottom of the photoelectric conversion chip is pasted with solder;
thinning the lower surface of the base adapter plate, wherein the thinning thickness is 10um to 700 um; depositing silicon oxide or silicon nitride on the lower surface of the base adapter plate to form an insulating layer, and manufacturing a bonding pad on the insulating layer on the lower surface of the base adapter plate through photoetching and electroplating processes;
102) the manufacturing steps of the heat dissipation adapter plate are as follows: manufacturing a groove on the upper surface of the heat dissipation adapter plate by photoetching and etching processes; depositing silicon oxide or silicon nitride on the upper surface of the heat dissipation adapter plate to form an insulating layer, and manufacturing a bonding pad on the upper surface of the heat dissipation adapter plate through photoetching and electroplating processes;
103) a base bonding step: bonding the heat dissipation adapter plate and the base adapter plate to form a base through a welding process, wherein the welding temperature is controlled below 280 ℃;
104) a cover adapter plate manufacturing step: depositing an insulating layer on the upper surface of the cover adapter plate, and manufacturing a bonding pad on the insulating layer through photoetching and electroplating processes; manufacturing TSV holes in the upper surface of the sealing cover adapter plate through photoetching and etching processes, and thinning the lower surface of the sealing cover adapter plate to expose the TSV holes;
105) a forming step: bonding the cover adapter plate and the base through a welding process to form an optical communication module; cutting the bonded optical communication module, mounting the optical communication module on a PCB, and vertically mounting the optical communication module on a terminal structure to obtain the terminal structure with the embedded optical communication module; the upper surface of the optical communication module is communicated with the optical fiber through the TSV hole, and the optical fiber is sealed.
2. The method of claim 1, wherein the method comprises: the RDL manufacturing process comprises RDL wiring and a bonding PAD, an insulating layer is manufactured by depositing silicon oxide or silicon nitride, and a chip PAD is exposed by photoetching and dry etching; RDL wiring arrangement is carried out through photoetching and electroplating processes, wherein the RDL wiring is formed by mixing one or more of copper, aluminum, nickel, silver, gold and tin, and is structurally in a one-layer or multi-layer structure, and the thickness range is 10nm to 1000 um; and manufacturing a bonding metal to form a bonding pad by photoetching and electroplating processes, wherein the windowing diameter of the bonding pad is between 10um and 10000 um.
3. The method of claim 2, wherein the method comprises: and covering an insulating layer on the surface of the RDL, and exposing the bonding pad through a windowing process.
4. The method of claim 2, wherein the method comprises: the thickness of the insulating layer ranges from 10nm to 100 um; the seed layer has one or more layers with thickness of 1 nm-100 um, and is made of one or more of Ti, Cu, Al, Ag, Pd, Au, Tl, Sn and Ni.
5. The method of claim 1, wherein the method comprises: the width of the groove ranges from 1um to 1000um, and the depth ranges from 1um to 500 um.
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| CN201910924288.4A CN110783426B (en) | 2019-09-27 | 2019-09-27 | Method for manufacturing embedded optical communication module |
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| CN111883498A (en) * | 2020-06-30 | 2020-11-03 | 复旦大学 | DRAM chip three-dimensional integrated system and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883498A (en) * | 2020-06-30 | 2020-11-03 | 复旦大学 | DRAM chip three-dimensional integrated system and preparation method thereof |
| CN111883498B (en) * | 2020-06-30 | 2021-07-06 | 复旦大学 | DRAM chip three-dimensional integrated system and preparation method thereof |
| WO2022000438A1 (en) * | 2020-06-30 | 2022-01-06 | 复旦大学 | Dram chip three-dimensional integration system and manufacturing method therefor |
| US11854939B2 (en) | 2020-06-30 | 2023-12-26 | Fudan University | Three-dimensional integrated system of dram chip and preparation method thereof |
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| CN110783426B (en) | 2021-07-30 |
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