CN110783348A - Array substrate, manufacturing method of array substrate and display panel - Google Patents

Array substrate, manufacturing method of array substrate and display panel Download PDF

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Publication number
CN110783348A
CN110783348A CN201911085687.2A CN201911085687A CN110783348A CN 110783348 A CN110783348 A CN 110783348A CN 201911085687 A CN201911085687 A CN 201911085687A CN 110783348 A CN110783348 A CN 110783348A
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substrate
signal line
forming
gate driving
driving
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CN110783348B (en
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李栋
陈登云
宋尊庆
张慧娟
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an array substrate, a manufacturing method of the array substrate and a display panel, wherein the array substrate comprises a bottom substrate and a flexible substrate; a gate driving circuit and a driving signal line on the flexible substrate; the light-emitting device comprises a plurality of light-emitting units and a plurality of packaging layers, wherein each light-emitting unit comprises a first bearing substrate, a pixel unit and a first packaging layer, the pixel unit is formed on the first bearing substrate and comprises a light-emitting area and a wiring area, the light-emitting area comprises m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, the wiring area comprises a signal wire corresponding to each pixel, and the pixels are electrically connected with the corresponding driving signal wires through the signal wires; and a flexible encapsulation layer for encapsulating the light emitting unit and the base substrate; wherein m and n are positive integers. The array substrate provided by the invention has good sealing performance and display effect while meeting tensile performance.

Description

Array substrate, manufacturing method of array substrate and display panel
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a manufacturing method of the array substrate and a display panel.
Background
The stretchable display device is an advanced form of flexible display, and can realize stretching deformation to a greater extent, and the conventional stretchable display device generally bears strain by hollowing out an inorganic layer around a pixel island, so as to reduce the deformation amount borne by the pixel island.
Disclosure of Invention
In order to solve at least one of the above problems, a first embodiment of the present invention provides an array substrate, including
An underlying substrate comprising
A flexible substrate;
the gate driving circuit and the driving signal line are positioned on the flexible substrate, and the driving signal line is electrically connected with the gate driving circuit;
a plurality of light emitting units on the underlying substrate, wherein each light emitting unit includes a first carrier substrate, a pixel unit formed on the first carrier substrate, and a first encapsulation layer for encapsulating the first carrier substrate and the pixel unit, wherein the pixel unit includes a light emitting region and a wiring region, the light emitting region includes m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, the wiring region includes a signal line corresponding to each pixel, and each pixel is electrically connected to the corresponding driving signal line through the signal line via a via hole on the first carrier substrate; and
a flexible encapsulation layer for encapsulating the light emitting unit and the base substrate;
wherein m and n are positive integers.
Further, the gate driving circuit includes a plurality of gate driving units, wherein
Each grid driving unit comprises a second bearing substrate, at least one grid driving sub-circuit formed on the second bearing substrate and a second packaging layer used for packaging the second bearing substrate and the grid driving sub-circuit, and each grid driving sub-circuit is electrically connected with the corresponding driving signal line through a through hole on the second bearing substrate.
Furthermore, the pixel unit is located on a first surface of the first carrier substrate, the light emitting unit further includes a pin area located on a second surface of the first carrier substrate opposite to the first surface, and the signal line is led out from the pin area;
the bottom substrate further comprises a pin accommodating area corresponding to the pin area;
the pin area is accommodated in the pin accommodating area so that the signal line is electrically connected with the driving signal line.
Further, the young modulus of the first bearing base is larger than that of the flexible substrate.
Further, the material of the driving signal line is a carbon nanotube material.
Further, the Young modulus of the flexible substrate is less than or equal to 3 GPa.
Further, m is 2, n is 2, and the light emitting unit includes 2 rows and 2 columns of pixels.
A second embodiment of the present invention provides a method for manufacturing the array substrate of the first embodiment, including:
forming a flexible substrate over a first substrate;
forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate to form an underlying substrate on the first substrate;
forming a first bearing substrate on a second substrate;
forming a pixel unit on the first carrier substrate, wherein the pixel unit comprises a light-emitting area and a wiring area, the light-emitting area comprises m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, and the wiring area comprises a signal line corresponding to each pixel;
forming a first encapsulation layer on the pixel unit to form a light emitting unit on the second substrate;
respectively peeling the plurality of light-emitting units from the second substrate and transferring the light-emitting units onto the bottom substrate, wherein each pixel of each light-emitting unit is electrically connected with the corresponding driving signal line through the signal line and a via hole on the first bearing base;
forming a flexible encapsulation layer covering the base substrate and the plurality of light emitting cells to form an array substrate on the first substrate;
and stripping the array substrate from the first substrate.
Further, the forming a gate driving circuit and a driving signal line electrically connected to the gate driving circuit on the flexible substrate to form a base substrate on the first substrate further includes:
forming a second bearing substrate on a third substrate;
forming at least one gate driving sub-circuit on the second carrier substrate;
forming a second packaging layer on the at least one gate driving sub-circuit to form a gate driving unit on the third substrate;
forming a driving signal line on the flexible substrate;
and respectively peeling the plurality of gate driving units from the third substrate and transferring the gate driving units to the flexible substrate to form gate driving circuits, wherein the gate driving sub-circuit of each gate driving unit is electrically connected with the corresponding driving signal line through a via hole positioned on the second bearing base, and the gate driving circuits, the driving signal lines and the flexible substrate form a bottom substrate positioned on the first substrate.
Furthermore, the light-emitting unit further comprises a pin area which is positioned on the first bearing substrate and far away from one side of the pixel unit and is used for leading out the signal wire, and the bottom substrate further comprises a pin accommodating area corresponding to the pin area;
the forming a first carrier substrate on a second substrate further comprises:
forming a sacrificial layer on a second substrate;
forming the lead region on the sacrificial layer;
forming a first bearing substrate on the lead area;
the forming of the gate driving circuit and the driving signal line electrically connected to the gate driving circuit on the flexible substrate to form the base substrate on the first substrate further includes:
forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate;
forming a dielectric layer covering the gate driving circuit and the driving signal line;
forming a pin accommodating area corresponding to the pin area on the dielectric layer, wherein the pin accommodating area is electrically connected with the corresponding driving signal line through a via hole of the dielectric layer;
forming a base substrate on the first substrate;
the peeling of the plurality of light emitting units from the second substrate and the transfer of the light emitting units onto the underlying substrate, respectively, wherein each pixel of the light emitting unit is electrically connected with the corresponding driving signal line through the signal line via a via hole located on the first carrier substrate, further comprises:
peeling the light emitting unit from the second substrate;
and aligning the pin area of the light-emitting unit and the pin accommodating area of the bottom substrate to form a box, so that the light-emitting unit is electrically connected with the pin accommodating area electrically connected with the driving signal wire on the bottom substrate through the pin area electrically connected with the signal wire.
Further, the young modulus of the first bearing base is larger than that of the flexible substrate.
Further, the material of the driving signal line is a carbon nanotube material.
Further, the Young modulus of the flexible substrate is less than or equal to 3 GPa.
Further, m is 2, n is 2, and the light emitting unit includes 2 rows and 2 columns of pixels.
A third embodiment of the present invention provides a display panel including the array substrate according to the first embodiment.
The invention has the following beneficial effects:
aiming at the existing problems, the array substrate, the manufacturing method of the array substrate and the display panel are formulated, the array substrate is formed by transferring the plurality of independently packaged light-emitting units to the bottom substrate and packaging the light-emitting units through the flexible packaging layer, so that the array substrate has good sealing performance and display effect while meeting tensile performance, the problems in the prior art are solved, the problem of complex process of an island-bridge structure of the existing flexible array substrate can be solved, the process flow is effectively simplified, the production efficiency of the array substrate is improved, and the display panel has wide application prospect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a light emitting unit according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an array substrate according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of a gate driving unit according to an embodiment of the invention;
fig. 5 is a flowchart illustrating a method for manufacturing an array substrate according to an embodiment of the invention.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
As shown in fig. 1, an embodiment of the present invention provides an array substrate 100, including a base substrate 10 including a flexible substrate 11; a gate driving circuit 13 and a driving signal line 12 on the flexible substrate 11, the driving signal line 12 being electrically connected to the gate driving circuit 13; a plurality of light emitting units 20 on the underlying substrate 10, wherein each light emitting unit 20 includes a first carrier substrate 21, a pixel unit 22 formed on the first carrier substrate 21, and a first encapsulation layer 23 for encapsulating the first carrier substrate 21 and the pixel unit 22, wherein the pixel unit 22 includes a light emitting region including m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, and a wiring region including a signal line corresponding to each pixel, and each pixel is electrically connected to the corresponding driving signal line 12 through a via hole on the first carrier substrate by the signal line; and a flexible encapsulation layer 30 for encapsulating the light emitting unit 20 and the base substrate 10; wherein m and n are positive integers.
In a specific example, as shown in fig. 1 and 2, the array substrate 100 includes a base substrate 10, a plurality of light emitting cells 20, and an encapsulation layer 30 encapsulating the base substrate 10 and the plurality of light emitting cells 20.
Specifically, the base substrate 10 includes a flexible substrate 11, and a gate driving circuit 13 and a driving signal line 12 on the flexible substrate 11. In this embodiment, the flexible substrate is Polydimethylsiloxane (PDMS), and has a young's modulus of 3GPa or less, is easily deformed, and has good tensile properties. A gate driving circuit 13(GOA) and a driving signal line 12 of the array substrate are fabricated on the flexible substrate 11, the driving signal line 12 includes a data signal line, a scanning signal line, a control signal line, and the like, and the driving signal line 12 is electrically connected to the gate driving circuit 13. In this embodiment, the driving signal lines are made of a metal material, and a deformation margin is reserved when the driving signal lines are arranged on the flexible substrate in consideration of deformation of the array substrate due to an external force, so that stable transmission of driving signals of the array substrate is ensured.
In this embodiment, the gate driving circuit 13(GOA) and the driving signal line 12 are fabricated on a flexible substrate with good tensile property, and when the array substrate is subjected to an external pressure, the flexible substrate bears and releases most of the external pressure, so that the underlying substrate 10 has good tensile property.
It should be noted that fig. 1 and fig. 2 only schematically illustrate the positions and structures of the driving signal lines and the gate driving circuits in the bottom substrate, and those skilled in the art should arrange the driving signal lines and the gate driving circuits according to the actual application requirements, for example, arrange signal lines with different functions in a layered manner, and details thereof are not repeated here.
Meanwhile, in this embodiment, the tensile resistance of the electroluminescent device is improved by using a separately manufactured light emitting unit, where the light emitting unit 20 includes a first carrier substrate 21, a pixel unit 22 and a first encapsulation layer 23, where the first carrier substrate 21 is made of an inorganic material and is used for carrying the pixel unit 22; the first encapsulating layer 23 is used for encapsulating the pixel unit 22; the pixel unit 22 includes a light emitting region and a wiring region. As shown in fig. 2, the light emitting region includes m rows and n columns of pixels and a plurality of driving thin film transistors driving the pixels, where m and n are positive integers, each pixel includes an anode 221, a light emitting layer 223 defined by a pixel defining layer 222, and a cathode 224 covering the pixel defining layer 222 and the light emitting layer 223, the driving thin film transistors include an active layer, an interlayer insulating layer, a gate electrode, a gate insulating layer, a source electrode and a drain electrode, the source electrode and the drain electrode are electrically connected to the active layer through via holes, and the pixels are electrically connected to the driving thin film transistors through via holes; the wiring region (not shown in the figure) includes a signal line corresponding to each pixel, the first carrier substrate includes a plurality of via holes, each pixel is electrically connected to the corresponding driving signal line through the signal line via the via hole, and the driving signal line and the gate driving circuit drive each pixel.
Specifically, the gate driving circuit 13 includes gate driving sub-circuits for driving pixels in each row, each of the gate driving sub-circuits includes a plurality of thin film transistors, and specifically includes an active layer 131, a gate insulating layer 132, a gate electrode 133, an interlayer insulating layer, a source electrode 134, and a drain electrode 135, the source electrode 134 and the drain electrode 135 are electrically connected to the active layer 131 through a via hole, and the source electrode 134 and the drain electrode 135 are turned on in response to a gate signal to transmit a data signal to a data signal line of a driving signal line, thereby driving the light emitting unit to emit light.
In consideration of the sensitivity of the electroluminescent device to water vapor and oxygen, each light-emitting unit is individually encapsulated, and the first encapsulation layer 23 includes a first inorganic encapsulation layer 231, a second organic encapsulation layer 232 and a third inorganic encapsulation layer 233, and forms protection for the pixel unit 22 with the hard inorganic first carrier substrate, so that the influence of water vapor and oxygen in the air on the performance of the electroluminescent device is effectively avoided.
Then, the plurality of individually fabricated light emitting units 20 are transferred onto the base substrate 10, and in order to fix the light emitting units 20 and further improve the tensile property of the array substrate, the base substrate 10 and the plurality of light emitting units 20 are encapsulated with a flexible encapsulating material to form a flexible encapsulating layer 30.
When the array substrate is subjected to external pressure, the flexible substrate 11 and the flexible packaging layer 30 bear and release most of the external pressure, and the external pressure borne by each light emitting unit is greatly reduced, so that good tensile property of the array substrate is realized. In other words, the array substrate of the present embodiment achieves good tensile properties through the flexible substrate and the flexible encapsulation layer that wrap the plurality of individual light emitting cells. Compared with the island-bridge structure of the flexible array substrate in the prior art, the plurality of light-emitting units are equivalent to each pixel island, and the flexible substrate and the flexible packaging layer bear and release external pressure, so that the manufacturing process and steps of the flexible array substrate of the existing island-bridge structure are simplified, the island-bridge structure has good display effect and sealing performance, and the use experience of a user is effectively improved.
In order to further improve the stretch-resistant performance of the array substrate, in an alternative embodiment, the young modulus of the first load-bearing substrate 21 is greater than the young modulus of the flexible substrate. Namely, the external pressure applied to the array substrate is borne by the flexible substrate, and meanwhile, the first bearing substrate 21 with the large young modulus can effectively ensure normal display of each pixel in the light-emitting unit while bearing the pixel unit, thereby effectively improving the display effect of the array substrate.
In consideration of the light emitting uniformity of each pixel when the array substrate displays, in an alternative embodiment, m is 2, n is 2, and the light emitting unit includes 2 rows and 2 columns of pixels. Use 2 lines of 2 row pixels to encapsulate as the luminescence unit, can guarantee the interval between each luminescence unit and ensure array substrate's whole encapsulation effect improves array substrate's display effect simultaneously, avoids having the display effect of granular sensation because of the too much display effect that arouses of pixel that luminescence unit includes, effectively improves user experience.
It should be noted that, in the present application, the number of pixels included in each light emitting unit is not limited, and those skilled in the art should set the number of pixels of each light emitting unit according to the resolution requirement of practical application, which is not described herein again.
In order to further improve the tensile performance of the array substrate, in an alternative embodiment, as shown in fig. 3 and 4, the gate driving circuit includes a plurality of gate driving units, where each gate driving unit includes a second carrier substrate, at least one gate driving sub-circuit formed on the second carrier substrate, and a second encapsulation layer for encapsulating the second carrier substrate and the gate driving sub-circuit, and each gate driving sub-circuit is electrically connected to the corresponding driving signal line through a via located on the second carrier substrate.
In this embodiment, in order to further improve the stretching performance of the frame position of the array substrate, the gate driving circuits located at two sides of the array substrate are also separately manufactured and packaged, as shown in fig. 4, similar to the separately packaged light emitting units, the gate driving circuit includes a plurality of gate driving units 40, and each gate driving unit 40 includes a second carrier substrate 41, a second package layer 43, and at least one gate driving sub-circuit 42.
Each gate driving sub-circuit 42 drives a row of pixels, the gate driving unit 40 includes one or more gate driving sub-circuits 42, each gate driving sub-circuit 42 includes a plurality of thin film transistors, and specifically includes an active layer 421, a gate insulating layer 422, a gate electrode 423, an interlayer insulating layer, a source electrode 424, and a drain electrode 425, and the source electrode 424 and the drain electrode 425 are electrically connected to the active layer 421 through a via hole.
The second carrier substrate includes a plurality of via holes, each gate driving sub-circuit 42 is electrically connected to the corresponding driving signal line through a via hole on the second carrier substrate to transmit a driving signal, and the driving signal line and the gate driving circuit realize driving of each pixel.
The second bearing substrate 41 is used for bearing the gate driving sub-circuit, and meanwhile, the gate driving sub-circuit is ensured to normally work under the condition of external force, so that the display stability of the array substrate is improved. The second encapsulation layer 43 includes a first inorganic encapsulation layer 431, a second organic encapsulation layer 432 and a third inorganic encapsulation layer 433, and forms an encapsulation for the at least one gate driving sub-circuit 42 with the hard inorganic second carrier substrate 41, thereby effectively avoiding the influence of external pressure on the performance of the gate driving circuit.
Considering that when the light emitting unit is transferred to the underlying substrate, the signal line led out from the wiring area of the light emitting unit is electrically connected to the corresponding driving signal line through the via hole of the first carrier substrate, which may cause signal short circuit, connection error, and the like when the array substrate is deformed, in an alternative embodiment, as shown in fig. 1 to 4, the pixel unit is located on a first surface of the first carrier substrate, the light emitting unit further includes a pin area located on a second surface of the first carrier substrate opposite to the first surface, and the pin area leads out the signal line; the bottom substrate further comprises a pin accommodating area corresponding to the pin area; the pin area is accommodated in the pin accommodating area so that the signal line is electrically connected with the driving signal line.
In this embodiment, the pin area 24 is disposed on a side of the first carrier substrate away from the pixel unit, and the pin area leads out the signal line through a via hole located on the first carrier substrate; the pin accommodating area 14 is arranged on one side of the bottom substrate close to the light emitting unit, and is electrically connected with the driving signal line through a via hole of a dielectric layer covering the driving signal line; the pin area 24 and the pin accommodating area 14 form a corresponding concave-convex structure, so that the pin area 24 and the pin accommodating area 14 are utilized to realize the electrical connection between the light-emitting unit 20 and the bottom substrate 10, the electrical connection between each pixel of the light-emitting unit and a corresponding driving signal line is ensured, when the array substrate is subjected to external pressure, the deformation of the bottom substrate 10 caused by the external pressure cannot cause the wrong connection with the signal line led out from the wiring area of the light-emitting unit, and the tensile resistance and the display effect of the array substrate are further improved.
Although a margin is reserved when the driving signal lines are arranged, in order to further improve the tensile resistance of the array substrate considering that the array substrate is repeatedly subjected to external force, in an alternative embodiment, the material of the driving signal lines is a carbon nanotube material.
In this embodiment, the driving signal line is made of a carbon nanotube material, which is an inorganic stretch-proof material, and can ensure stable transmission of the driving signal under the action of an external force.
Corresponding to the array substrate provided in the foregoing embodiments, an embodiment of the present application further provides a manufacturing method of the array substrate, and since the manufacturing method provided in the embodiment of the present application corresponds to the array substrates provided in the foregoing embodiments, the foregoing embodiment is also applicable to the manufacturing method provided in the present embodiment, and is not described in detail in the present embodiment.
As shown in fig. 5, an embodiment of the present application further provides a method for manufacturing the array substrate, including: forming a flexible substrate over a first substrate; forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate to form an underlying substrate on the first substrate; forming a first bearing substrate on a second substrate; forming a pixel unit on the first carrier substrate, wherein the pixel unit comprises a light-emitting area and a wiring area, the light-emitting area comprises m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, and the wiring area comprises a signal line corresponding to each pixel; forming a first encapsulation layer on the pixel unit to form a light emitting unit on the second substrate; respectively peeling the plurality of light-emitting units from the second substrate and transferring the light-emitting units onto the bottom substrate, wherein each pixel of each light-emitting unit is electrically connected with the corresponding driving signal line through the signal line and a via hole on the first bearing base; forming a flexible encapsulation layer covering the base substrate and the plurality of light emitting cells to form an array substrate on the first substrate; and stripping the array substrate from the first substrate.
In a specific example, as shown in fig. 5, the manufacturing method of the array substrate is as follows:
the first step is as follows: the method comprises the steps of forming a flexible substrate on a first substrate, and forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate to form an underlayer substrate on the first substrate.
In this embodiment, the first substrate is glass, a flexible substrate is formed on the glass, and the flexible substrate is a Polydimethylsiloxane (PDMS) material, and has a young modulus of 3GPa or less, is easily deformed, and has a good tensile property; then forming a gate drive circuit and a drive signal line on the flexible substrate, wherein the gate drive circuit comprises a plurality of thin film transistors, and the drive signal line adopts a carbon nano tube material and comprises a data signal line, a scanning signal line, a control signal line and other circuits for driving the electroluminescent device to emit light; thereby forming an underlying substrate on the first substrate. When the array substrate is subjected to external pressure, the flexible substrate bears and releases partial external pressure, so that the driving circuit has good tensile resistance.
The second step is that: forming a first bearing substrate on a second substrate; forming a pixel unit on the first carrier substrate, wherein the pixel unit comprises a light-emitting area and a wiring area, the light-emitting area comprises m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, and the wiring area comprises a signal line corresponding to each pixel; and forming a first packaging layer on the pixel unit to form a light emitting unit on the second substrate.
In this embodiment, the light emitting unit is fabricated on the second substrate separately, specifically:
the second substrate is glass, a first bearing base is formed on the glass, and the Young modulus of the first bearing base is larger than that of the flexible substrate. When the array substrate is subjected to external pressure, the flexible substrate with the lower Young modulus bears most of the external pressure and deforms, and the first bearing substrate with the Young modulus larger than that of the flexible substrate basically does not deform, so that normal display of each pixel in the light emitting unit on the first bearing substrate is effectively ensured, the pixels are not influenced by the external pressure, and the display effect of the array substrate is improved.
Then, a pixel unit including a light emitting region including m rows and n columns of pixels and a plurality of driving thin film transistors driving the pixels and a wiring region including a signal line corresponding to each pixel is formed on the first carrier substrate.
In this embodiment, the light emitting unit leads out control signals of each pixel through the wiring region, is electrically connected with the corresponding driving signal line of the bottom substrate through the via hole, and controls each pixel of the light emitting region to emit light according to the corresponding driving signal, thereby realizing normal display of the array substrate. In this embodiment, m is 2, n is 2, the light emitting unit includes 2 rows and 2 columns of pixels, the pitch between the light emitting units is effectively controlled to achieve uniform light emission of the array substrate, and the overall packaging effect of the array substrate can be ensured.
Finally, an encapsulation layer is formed on the pixel unit to form a light emitting unit on the second substrate.
In this embodiment, each light emitting unit is individually encapsulated in consideration of the sensitivity of the electroluminescent device to water vapor and oxygen, the encapsulation layers include a first inorganic encapsulation layer, a second organic encapsulation layer and a third inorganic encapsulation layer, and the encapsulation layers and the first carrier substrate made of an inorganic material form protection for the pixel unit, so that the influence of the water vapor and oxygen in the air on the performance of the electroluminescent device is effectively avoided.
Thus, a light emitting cell on the second substrate is formed.
And thirdly, respectively peeling the light-emitting units from the second substrate and transferring the light-emitting units onto the bottom substrate, wherein each pixel of the light-emitting unit is electrically connected with the corresponding driving signal line through the signal line and a via hole positioned on the first bearing base.
In this embodiment, a plurality of individually fabricated light emitting cells are peeled off from the second substrate, respectively.
In view of the integrity of the peeled light emitting unit, in an alternative embodiment, the forming the first carrier substrate on the second substrate in the manufacturing of the array substrate further includes: forming a sacrificial layer on a second substrate; a first carrier substrate is formed on the sacrificial layer. The second substrate is ion-implanted, for example, by an ion implantation process to form a sacrificial layer, and when the light emitting cells are peeled off from the second substrate, the light emitting cells are entirely peeled off from the second substrate by etching the sacrificial layer.
The light-emitting unit is electrically connected with the corresponding driving signal line on the bottom substrate through the signal line of the wiring area through the hole to finish the transfer of the light-emitting unit, so that the driving of an electroluminescent device in the light-emitting unit is realized through the gate driving circuit and the driving signal line.
Considering that the gate driving circuits on both sides of the array substrate may be influenced by external forces to affect the display effect, in an alternative embodiment, the forming the gate driving circuits and the driving signal lines electrically connected to the gate driving circuits on the flexible substrate to form the base substrate on the first substrate further includes: forming a second bearing substrate on a third substrate; forming at least one gate driving sub-circuit on the second carrier substrate; forming a second packaging layer on the at least one gate driving sub-circuit to form a gate driving unit on the third substrate; forming a driving signal line on the flexible substrate; and respectively peeling the plurality of gate driving units from the third substrate and transferring the gate driving units to the flexible substrate to form gate driving circuits, wherein the gate driving sub-circuit of each gate driving unit is electrically connected with the corresponding driving signal line through a via hole positioned on the second bearing base, and the gate driving circuits, the driving signal lines and the flexible substrate form a bottom substrate positioned on the first substrate.
In this embodiment, similar to the independent fabrication of the light emitting unit, the gate driving circuit is divided into a plurality of gate driving units, and each gate driving unit includes at least one gate driving sub-circuit, so as to effectively ensure that the gate driving sub-circuits are not affected by an external force and effectively improve the stretch-proof performance of the array substrate.
In consideration of the situation that when the array substrate deforms, a control signal between a signal line of a light emitting unit and a driving circuit may be short-circuited or erroneously connected, in an optional embodiment, the light emitting unit further includes a pin area, which is located on the first carrier substrate and is far away from the pixel unit and from which the signal line is led out, and the bottom substrate further includes a pin accommodating area corresponding to the pin area; the forming a first carrier substrate on a second substrate further comprises: forming a sacrificial layer on a second substrate; forming the lead region on the sacrificial layer; forming a first bearing substrate on the lead area; the forming of the gate driving circuit and the driving signal line electrically connected to the gate driving circuit on the flexible substrate to form the base substrate on the first substrate further includes: forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate; forming a dielectric layer covering the gate driving circuit and the driving signal line; forming a pin accommodating area corresponding to the pin area on the dielectric layer, wherein the pin accommodating area is electrically connected with the corresponding driving signal line through a via hole of the dielectric layer; forming a base substrate on the first substrate; the peeling of the plurality of light emitting units from the second substrate and the transfer of the light emitting units onto the underlying substrate, respectively, wherein each pixel of the light emitting unit is electrically connected with the corresponding driving signal line through the signal line via a via hole located on the first carrier substrate, further comprises: peeling the light emitting unit from the second substrate; and aligning the pin area of the light-emitting unit and the pin accommodating area of the bottom substrate to form a box, so that the light-emitting unit is electrically connected with the pin accommodating area electrically connected with the driving signal wire on the bottom substrate through the pin area electrically connected with the signal wire.
In this embodiment, the pin area and the pin receiving area form a corresponding concave-convex structure, and the light emitting unit and the bottom substrate are aligned through the pin area and the pin receiving area, so as to ensure the connection between the light emitting unit and the corresponding driving circuit. Specifically, a sacrificial layer is formed on the second substrate, and a pin area is formed on the sacrificial layer, so that the pin area can be ensured to be intact when the light-emitting unit is peeled off from the second substrate, thereby ensuring normal operation of the pin area. Meanwhile, a dielectric layer covering the flexible substrate, the gate drive circuit and the drive signal line is formed on the bottom substrate, a pin accommodating area corresponding to the pin area is formed on the dielectric layer, and the pin accommodating area is electrically connected with the corresponding drive signal line through a through hole of the dielectric layer. When the array substrate is subjected to external pressure, the deformation of the bottom substrate caused by the external pressure can not cause the wrong connection with the signal wire led out from the wiring area, and the tensile resistance and the display effect of the array substrate are effectively improved.
And fourthly, forming a flexible packaging layer covering the bottom substrate and the plurality of light emitting units to form the array substrate positioned on the first substrate.
In this embodiment, in order to fix the light emitting units transferred to the underlying substrate and further improve the stretch-proof performance of the array substrate, the underlying substrate and the plurality of light emitting units are encapsulated by using a flexible encapsulation material to form a flexible encapsulation layer, so as to further improve the stretch-proof performance of the array substrate. The array substrate of this embodiment bears external pressure and produces deformation through flexible substrate and flexible encapsulation layer promptly, reduce the external pressure that a plurality of independent luminescence units of its parcel bore by a wide margin, luminescence unit is located the great first base that bears of young modulus simultaneously, external pressure does not have the deformation influence to the device base plate in the luminescence unit, effectively avoid luminescence unit to influence normal demonstration because of external pressure, thereby realize array substrate's good tensile properties, simplify the preparation technology and the step of the flexible array substrate of current island-bridge structure, good display effect and sealing performance have, effectively improve user's use experience.
And fifthly, stripping the array substrate from the first substrate.
In this embodiment, the array substrate is peeled off from the first substrate, and the array substrate is completed.
Based on the array substrate, another embodiment of the invention provides a display panel, which includes the array substrate. The display panel is a flexible electroluminescent diode display panel, and can be used for any product or component with a flexible display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame or a navigator.
Aiming at the existing problems, the array substrate, the manufacturing method of the array substrate and the display panel are formulated, the array substrate is formed by transferring the plurality of independently packaged light-emitting units to the bottom substrate and packaging the light-emitting units through the flexible packaging layer, so that the array substrate has good sealing performance and display effect while meeting tensile performance, the problems in the prior art are solved, the problem of complex process of an island-bridge structure of the existing flexible array substrate can be solved, the process flow is effectively simplified, the production efficiency of the array substrate is improved, and the display panel has wide application prospect.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.

Claims (11)

1. An array substrate, comprising
An underlying substrate comprising
A flexible substrate;
the gate driving circuit and the driving signal line are positioned on the flexible substrate, and the driving signal line is electrically connected with the gate driving circuit;
a plurality of light emitting units on the underlying substrate, wherein each light emitting unit includes a first carrier substrate, a pixel unit formed on the first carrier substrate, and a first encapsulation layer for encapsulating the first carrier substrate and the pixel unit, wherein the pixel unit includes a light emitting region and a wiring region, the light emitting region includes m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, the wiring region includes a signal line corresponding to each pixel, and each pixel is electrically connected to the corresponding driving signal line through the signal line via a via hole on the first carrier substrate; and
a flexible encapsulation layer for encapsulating the light emitting unit and the base substrate;
wherein m and n are positive integers.
2. The array substrate of claim 1, wherein the gate driving circuit comprises a plurality of gate driving units, wherein
Each grid driving unit comprises a second bearing substrate, at least one grid driving sub-circuit formed on the second bearing substrate and a second packaging layer used for packaging the second bearing substrate and the grid driving sub-circuit, and each grid driving sub-circuit is electrically connected with the corresponding driving signal line through a through hole on the second bearing substrate.
3. The array substrate of claim 1 or 2,
the pixel unit is positioned on a first surface of the first bearing substrate, the light-emitting unit further comprises a pin area positioned on a second surface of the first bearing substrate opposite to the first surface, and the signal line is led out of the pin area;
the bottom substrate further comprises a pin accommodating area corresponding to the pin area;
the pin area is accommodated in the pin accommodating area so that the signal line is electrically connected with the driving signal line.
4. The array substrate of claim 3, wherein the Young's modulus of the first carrier substrate is greater than the Young's modulus of the flexible substrate.
5. The array substrate of claim 3, wherein the material of the driving signal line is carbon nanotube material.
6. A method for manufacturing the array substrate according to any one of claims 1 to 5, comprising:
forming a flexible substrate over a first substrate;
forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate to form an underlying substrate on the first substrate;
forming a first bearing substrate on a second substrate;
forming a pixel unit on the first carrier substrate, wherein the pixel unit comprises a light-emitting area and a wiring area, the light-emitting area comprises m rows and n columns of pixels and a plurality of driving thin film transistors for driving the pixels, and the wiring area comprises a signal line corresponding to each pixel;
forming a first encapsulation layer on the pixel unit to form a light emitting unit on the second substrate;
respectively peeling the plurality of light-emitting units from the second substrate and transferring the light-emitting units onto the bottom substrate, wherein each pixel of each light-emitting unit is electrically connected with the corresponding driving signal line through the signal line and a via hole on the first bearing base;
forming a flexible encapsulation layer covering the base substrate and the plurality of light emitting cells to form an array substrate on the first substrate;
and stripping the array substrate from the first substrate.
7. The method of manufacturing according to claim 6,
the forming of the gate driving circuit and the driving signal line electrically connected to the gate driving circuit on the flexible substrate to form the base substrate on the first substrate further includes:
forming a second bearing substrate on a third substrate;
forming at least one gate driving sub-circuit on the second carrier substrate;
forming a second packaging layer on the at least one gate driving sub-circuit to form a gate driving unit on the third substrate;
forming a driving signal line on the flexible substrate;
and respectively peeling the plurality of gate driving units from the third substrate and transferring the gate driving units to the flexible substrate to form gate driving circuits, wherein the gate driving sub-circuit of each gate driving unit is electrically connected with the corresponding driving signal line through a via hole positioned on the second bearing base, and the gate driving circuits, the driving signal lines and the flexible substrate form a bottom substrate positioned on the first substrate.
8. The production method according to claim 6 or 7,
the light-emitting unit further comprises a pin area which is positioned on one side of the first bearing substrate far away from the pixel unit and is used for leading out the signal wire, and the bottom substrate further comprises a pin accommodating area corresponding to the pin area;
the forming a first carrier substrate on a second substrate further comprises:
forming a sacrificial layer on a second substrate;
forming the lead region on the sacrificial layer;
forming a first bearing substrate on the lead area;
the forming of the gate driving circuit and the driving signal line electrically connected to the gate driving circuit on the flexible substrate to form the base substrate on the first substrate further includes:
forming a gate driving circuit and a driving signal line electrically connected with the gate driving circuit on the flexible substrate;
forming a dielectric layer covering the gate driving circuit and the driving signal line;
forming a pin accommodating area corresponding to the pin area on the dielectric layer, wherein the pin accommodating area is electrically connected with the corresponding driving signal line through a via hole of the dielectric layer;
forming a base substrate on the first substrate;
the peeling of the plurality of light emitting units from the second substrate and the transfer of the light emitting units onto the underlying substrate, respectively, wherein each pixel of the light emitting unit is electrically connected with the corresponding driving signal line through the signal line via a via hole located on the first carrier substrate, further comprises:
peeling the light emitting unit from the second substrate;
and aligning the pin area of the light-emitting unit and the pin accommodating area of the bottom substrate to form a box, so that the light-emitting unit is electrically connected with the pin accommodating area electrically connected with the driving signal wire on the bottom substrate through the pin area electrically connected with the signal wire.
9. The method of manufacturing according to claim 8, wherein the young's modulus of the first carrier base is larger than the young's modulus of the flexible substrate.
10. The method of manufacturing according to claim 8,
the material of the driving signal line is carbon nanotube material.
11. A display panel comprising the array substrate according to any one of claims 1 to 5.
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