CN110783240A

CN110783240A - Furnace body equipment

Info

Publication number: CN110783240A
Application number: CN201911144445.6A
Authority: CN
Inventors: 罗搏飞; 吴勇茂; 冼志军
Original assignee: Changzhou Jiejiachuang Intelligent Equipment Co Ltd
Current assignee: Changzhou Jiejiachuang Intelligent Equipment Co Ltd
Priority date: 2019-11-20
Filing date: 2019-11-20
Publication date: 2020-02-11

Abstract

The invention provides a furnace body device, comprising: the heating device comprises a furnace body, a heating element and an air draft device, wherein a first inner chamber and a second inner chamber which are communicated are arranged in the furnace body, the first inner chamber is suitable for being communicated with the process cavity, the heating element is arranged in the second inner chamber, and the air draft device is arranged on the furnace body and is used for pumping gas in the second inner chamber into the first inner chamber; the conveying device is at least partially arranged in the process cavity and comprises a transmission piece and a carrier, the carrier is arranged on the transmission piece, and the transmission piece is used for driving the carrier to move relative to the process cavity. According to the furnace body equipment provided by the invention, the gas is preheated in the second inner chamber, so that the temperature of the gas is uniform and constant, the temperature in the process chamber is uniform and constant after the gas enters the process chamber, the drying and curing effects and the yield of the silicon wafer are improved, and the phenomenon of nonuniform temperature in the furnace chamber is avoided.

Description

Furnace body equipment

Technical Field

The invention relates to the technical field of photovoltaic cells, in particular to furnace body equipment.

Background

When an HIT (heterojunction with intrinsic thin) solar photovoltaic cell is prepared, after the conductive paste is printed on the surface of a silicon wafer, drying and curing are required. The conventional heating apparatus is to install an infrared heater in a furnace chamber (process chamber) and then blow cool air into the furnace chamber. In the drying and curing process, cold air is directly blown into the furnace chamber, so that the temperature in the furnace chamber is suddenly cooled and suddenly heated and is uneven.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art.

Therefore, the invention aims to provide furnace body equipment.

In order to achieve the above object, the technical solution of the present invention provides a furnace body apparatus, including: the heating device comprises a furnace body, a heating element and an air draft device, wherein a first inner chamber and a second inner chamber which are communicated are arranged in the furnace body, the first inner chamber is suitable for being communicated with the process cavity, the heating element is arranged in the second inner chamber, and the air draft device is arranged on the furnace body and used for pumping gas in the second inner chamber into the first inner chamber; the conveying device is at least partially arranged in the process cavity and comprises a transmission part and a carrier, the carrier is used for bearing the silicon wafer and arranged on the transmission part, and the transmission part is used for driving the carrier to move relative to the process cavity.

According to the furnace body equipment provided by the technical scheme, the heating element is positioned in the second inner chamber, and the gas is preheated in the second inner chamber. The air extracting device pumps the preheated gas in the second inner chamber to the first inner chamber, the hot air is further uniformly mixed in the first inner chamber, and the first inner chamber is communicated with the process chamber, so that the preheated gas enters the process chamber to heat the silicon wafer passing through the process chamber.

Because gas has preheated in the second inner room to the gas temperature is even invariable, and like this gas gets into the process chamber after, makes the process chamber temperature even invariable, improves stoving solidification effect and the yield to the silicon chip, avoids appearing the uneven phenomenon of temperature in the furnace chamber.

The silicon chip is located the carrier, and the carrier is connected on the driving medium to realize that the silicon chip removes along with the driving medium, realize the transmission to the silicon chip. Under the drive of the transmission part, the carrier and the silicon wafer enter the process cavity and move relative to the process cavity so as to dry and solidify the silicon wafer.

In addition, the furnace body equipment provided by the technical scheme of the invention also has the following additional technical characteristics:

in the above technical scheme, the number of the furnace bodies is two, and the two furnace bodies are respectively a first furnace body and a second furnace body which are arranged oppositely, the process cavity is defined by the first furnace body and the second furnace body, the second inner chamber of the first furnace body is provided with a cold air inlet, and the second inner chamber of the second furnace body is provided with a compressed air inlet.

The cold air inlet is connected with a cold air inlet pipe, the compressed air inlet is connected with a compressed air inlet pipe, cold air enters the second inner chamber of the first furnace body through the cold air inlet pipe, and is preheated into hot air through a heating element in the second inner chamber. The compressed air enters a second inner chamber of the second furnace body through a compressed air inlet pipe and is heated into hot air through a heating element in the second inner chamber.

Set up cold air intake and compressed air intake, through the compressed air that the compressed air intake got into, can realize the replenishment of the fresh air of process chamber, guarantee the cleanness of the interior gas of heating process chamber, guarantee the quality of the wind that first inner room blew out, satisfy silicon chip production, promote stoving solidification effect and efficiency.

Further, the first furnace body and the second furnace body are arranged up and down, for example, the first furnace body is positioned above the second furnace body.

Furthermore, the heating device comprises a plurality of heating zones which are sequentially spliced, each heating zone comprises a first furnace body and a second furnace body, a compressed air inlet is formed in a second inner chamber of the second furnace body of each heating zone, and compressed air in each second inner chamber is independently regulated.

In any of the above technical solutions, a lifting device is disposed on the furnace body to drive the first furnace body to move up and down relative to the second furnace body, wherein the lifting device includes an electric rod, a hydraulic cylinder, an air cylinder, or an electromagnetic push rod.

The first furnace body is driven to move up and down relative to the second furnace body by the lifting device, and when the first furnace body is driven to move down relative to the second furnace body by the lifting device, the first furnace body and the second furnace body can be assembled to form a process cavity; when first furnace body upwards moved for the second furnace body, first furnace body and second furnace body phase separation, first furnace body risees, conveniently maintains equipment.

The first furnace body can be driven to move up and down relative to the second furnace body through the electric rod, the hydraulic cylinder, the air cylinder or the electromagnetic push rod, and the lifting device is simple in structure and low in cost.

Further, the number of the lifting devices is plural, for example, the lifting devices are electric rods, and the number of the electric rods is four.

In any of the above technical solutions, the first furnace body is provided with a guide portion, the second furnace body is provided with a guide matching portion, and the guide portion is matched with the guide matching portion to guide the first furnace body to move up and down relative to the second furnace body.

The guide part is matched with the guide matching part to guide the first furnace body to move up and down (move up and down) relative to the second furnace body, so that the first furnace body can reciprocate up and down relative to the second furnace body, and the first furnace body is prevented from shifting relative to the second furnace body in the movement process.

In any one of the above technical solutions, the guide portion includes a guide rod disposed on the first furnace body, the guide mating portion includes a guide groove disposed on the second furnace body, and the guide rod is located in the guide groove and moves up and down relative to the guide groove; or the guide part comprises a guide groove arranged on the first furnace body, the guide matching part comprises a guide rod arranged on the second furnace body, and the guide rod is positioned in the guide groove and moves up and down relative to the guide groove.

When the first furnace body moves up and down relative to the second furnace body, the guide rod is positioned in the guide groove and moves up and down relative to the guide groove so as to guide the lifting action of the first furnace body relative to the second furnace body.

Further, guide way and guide bar setting are on the surface of furnace body, and the guide way quantity is a plurality of, and the quantity of guide bar equals and the one-to-one with the quantity of guide way, and for example guide bar and guide way setting are on the both sides face of furnace body, and the guide bar of guide bar for setting up along upper and lower direction, and the guide way includes that first arch and second are protruding, and first arch and the protruding relative setting of second to inject the guide way.

In any one of the above technical solutions, the furnace body equipment includes: the flow equalizing plate forms at least part of the side wall of the first inner chamber, a first through hole and a second through hole are arranged on the flow equalizing plate, the first through hole corresponds to the first inner chamber, the first inner chamber is communicated with the process cavity through the first through hole, the second through hole corresponds to the second inner chamber, and the second inner chamber is communicated with the process cavity through the second through hole; the number of the first through holes is multiple, the cross-sectional area of each first through hole is reduced along the direction that gas flows from the first inner chamber to the process chamber, and the opening area of each first through hole is smaller than that of each second through hole.

The gas in the first inner chamber flows into the process cavity through the first through hole under the action of the air exhaust device, so that the first inner chamber is communicated with the process cavity.

Furthermore, the number of the first through holes is multiple, and the multiple first through holes are uniformly distributed on the flow equalizing plate, so that the air flow in the first inner chamber can enter all parts of the process chamber, and the uniformity of the temperature in the process chamber is further improved.

Further, the first through hole has a reduced sectional area in a direction in which gas flows from the first inner chamber to the process chamber.

The first through hole is large in the position close to the first inner chamber, the first through hole is small in the position close to the process cavity, and hot air heated by the heating element flows to the small-aperture side from the large-aperture side, so that the hot air is uniformly dispersed, and the flow resistance of the hot air is reduced.

Further, the first through hole has a sectional area gradually decreasing in a direction in which the gas flows from the first inner chamber to the process chamber. For example, the first through hole is a circular hole, the first through hole is in a Y shape, the aperture of the first through hole on the surface facing the first inner chamber is large, the aperture gradually decreases with the depth, and the aperture does not change until the aperture completely penetrates through the uniform flow plate after the aperture decreases to a set value. It will be appreciated that the first through-hole may be of any shape other than circular, for example rectangular, oval, etc.

And gas (mainly hot air) in the process cavity flows back to the second inner chamber through the second through hole, so that the circulation of the hot air is realized, the hot air is circularly heated and used, the heat loss is reduced, and the constant temperature in the furnace body is ensured.

Further, the second inner chamber is positioned at the periphery of the first inner chamber, the second inner chamber is formed by a surrounding wall of the first inner chamber and an inner side wall of the furnace body, and the second through hole is positioned at the periphery of the first through hole.

Furthermore, the number of the second through holes is multiple, and the multiple second through holes are arranged at the edge of the uniform flow plate and are uniformly arranged, for example, the uniform flow plate is rectangular, and the multiple second through holes are uniformly distributed along the length direction or the width direction of the uniform flow plate.

Further, the open area of the single second through hole is larger than that of the single first through hole, so that the number of the second through holes can be reduced, and the manufacturing cost of the uniform flow plate can be reduced.

Further, the heating device includes: and the adjusting device is arranged at the second through hole and used for adjusting the size of the second through hole.

The adjusting device is used for adjusting the opening size of the second through hole so as to control the amount of hot air flowing back from the process chamber to the second inner chamber, so that the hot air can be recycled, and the temperature in the furnace body can be further controlled to be constant.

In any one of the above technical solutions, the furnace body equipment includes: the waste discharge device comprises a waste discharge pipe, a waste discharge box, a connecting port and a fire prevention valve, the waste discharge pipe is communicated with at least one first inner chamber, the waste discharge box is communicated between the waste discharge pipe and the connecting port, a gap communicated with the outside is formed between the connecting port and the waste discharge box, the fire prevention valve is connected to one end, deviating from the waste discharge box, of the connecting port, and the fire prevention valve is used for opening or closing the connecting port; wherein a flow area of the connection port decreases in a flow direction of the gas in the connection port.

The waste discharge pipe is connected and communicated with the first inner chamber, a part of hot air in the first inner chamber enters the waste discharge pipe, the hot air in the waste discharge pipe enters the waste discharge box and is discharged to the outside through the waste discharge box, and therefore the part of hot air in the first inner chamber is discharged out of the furnace body, and the quality of air in the process chamber is guaranteed.

Furthermore, the heating device comprises a plurality of heating zones which are sequentially spliced, a first inner chamber of the first furnace body of each heating zone is connected and communicated with the waste discharge pipe, and the waste discharge pipes are collected and communicated with the waste discharge box.

Under the effect of driving force, gaseous by the exhaust pipe inflow exhaust box, flow into the connector from the exhaust box again, have the clearance that is linked together with the external world in the junction of exhaust box and connector, when driving force was too big like this, the external air can get into the connector from the clearance, avoids too much gas outflow to the connector in the first inner room and leads to the process chamber gas volume not enough.

Along the flowing direction of the gas in the connecting port, the flow area of the connecting port is reduced, so that the gas can uniformly and smoothly flow through the connecting port, and the flowing resistance of the gas in the connecting port is reduced.

The gas flows through the waste discharge pipe, the waste discharge box, the connecting port and the fire-proof valve in sequence. When the gas temperature in the second inner chamber or the process cavity is too high to exceed the preset temperature value, the fire-proof valve is closed, the heat source is isolated, and the damage to some parts of high-temperature gas equipment is avoided. When the temperature of the gas in the second inner chamber or the process chamber is low or equal to a preset temperature value, the fire damper is opened, so that the gas can flow through the fire damper.

In any one of the above technical solutions, the waste discharge device is disposed on the first furnace body, and the waste discharge pipe is communicated with the first inner chamber of the first furnace body.

The compressed air inlet is arranged on the second furnace body, the waste discharge device is arranged on the first furnace body, interference between the compressed air inlet and the waste discharge device is avoided, and the compressed air inlet and the waste discharge device are convenient to arrange.

Furthermore, the first furnace body is positioned above the second furnace body, and the waste discharge device is positioned above the compressed air inlet.

In any one of the above technical solutions, the carrier includes a supporting plate, and a positioning element and a fixing element both disposed on the supporting plate, wherein the positioning element is used to support the bottom of the silicon wafer, the fixing element and the positioning element are disposed on the same side of the supporting plate, and the fixing element is used to limit the side edge of the silicon wafer and enable the silicon wafer to be in the carrier for side-to-side transmission.

The fixing piece and the positioning piece are arranged on the same side of the supporting plate, so that the silicon wafer can be conveyed by the carrier in a side-standing mode, the conveying requirement is met, the working efficiency of drying, curing and the like is effectively improved, the silicon wafer is conveyed into the furnace body, the front side and the back side of the silicon wafer can be heated, dried and cured, the process time is shortened, and the drying, curing and yield are improved.

In any one of the above technical solutions, the fixing member includes a first connecting rod and a second connecting rod which are arranged oppositely, the first connecting rod and the second connecting rod are arranged on the supporting plate, the fixing member further includes an ear support portion arranged between the first connecting rod and the second connecting rod, the ear support portion is located on the first connecting rod and the second connecting rod deviates from one side of the positioning member and limits the opening direction of the opening groove of the positioning member, and the ear support portion is used for limiting the side edge of the silicon wafer.

The fixing piece stands upright at the end of the supporting plate, an ear supporting part is arranged at one end, far away from the supporting plate, of the fixing piece, the ear supporting part surrounds the corresponding side edge of the silicon wafer, the ear supporting part is in contact with the side edge of the silicon wafer, the middle of the silicon wafer is prevented from being in contact with the ear supporting part, printing on the silicon wafer is effectively protected, and the yield of products and the photoelectric efficiency are improved.

The fixing piece is of a rod body bending structure and is provided with a first connecting rod and a second connecting rod which are spaced front and back, a gap between the first connecting rod and the second connecting rod is matched with the silicon wafer to be placed in a side-standing mode, and one ends, far away from the supporting plate, of the first connecting rod and one ends, far away from the supporting plate, of the second connecting rod are connected together through the lug support portions. The structure is simple and the manufacture is easy. Furthermore, the ear support parts are in a V-shaped side wing shape, so that the width size of the silicon wafer is met, the corresponding side edges of the silicon wafer are surrounded by the ear support parts and are properly supported, the silicon wafer is conveyed in a side-standing mode, and the conveying requirement is met.

Furthermore, the supporting plate and the fixing part are combined into a concave shape, the supporting plate and the silicon wafer are transversely arranged in a crossed mode in the conveying direction, the upper side face of the supporting plate and the fixing part surround the silicon wafer to be placed on the side, the fixing part is in contact with the edge of the silicon wafer, the middle of the silicon wafer is prevented from being in contact with the fixing part, and printing on the silicon wafer is effectively protected.

The first connecting rod and the second connecting rod extend outwards towards two ends along the axial direction (length direction) of the supporting plate to form a V-shaped lug support part which is provided with a V-shaped groove so as to place a silicon wafer, and the possibility of scratching a battery wafer (silicon wafer) is reduced.

Further, the number of the fixing members is plural, for example, the number of the fixing members is two, and the two fixing members are respectively located at two ends of the supporting plate in the length direction.

In any of the above technical solutions, the transmission member includes a duplex chain, a duplex sprocket and a transmission shaft, the duplex sprocket is engaged with the duplex chain, and the transmission shaft passes through the duplex sprocket and is used for driving the duplex sprocket to rotate; the transmission shaft is provided with a plurality of double-row chain wheels, wherein at least one of the transmission shafts is a driving shaft to form transmission circulation, each transmission shaft is sequentially provided with a plurality of double-row chain wheels, and the number of the double-row chains is equal to that of the double-row chain wheels arranged on one transmission shaft and corresponds to that of the double-row chain wheels.

The carrier is connected on the middle chain plate so as to move along with the chain and realize the transmission of the silicon wafer. The double-row chain transmission is adopted, so that the stability and the accuracy of transmission can be improved.

The double-row chain comprises outer chain plates, a pin shaft, a middle chain plate and inner chain plates, wherein the two outer chain plates are connected through the pin shaft to form an outer chain link, the middle chain plate is arranged on the pin shaft between the two outer chain plates, the inner chain link is arranged between the middle chain plate and the outer chain plates, and the inner chain link comprises the inner chain plates.

The double row sprocket comprises two sprockets oppositely arranged, and further, the two sprockets are symmetrically arranged. One chain wheel in the double-row chain wheel is meshed with one chain in the double-row chain, and the other chain wheel in the double-row chain wheel is meshed with the other chain in the double-row chain, so that the double-row chain is driven to move stably.

In any one of the above technical solutions, the number of the transmission shafts is plural, at least one of the transmission shafts is a driving shaft to form a transmission cycle, and each of the transmission shafts is sequentially provided with a plurality of the double-row sprockets, and the number of the double-row chains is equal to and corresponds to the number of the double-row sprockets arranged on one of the transmission shafts.

At least one of the transmission shafts is a driving shaft, and the rest of the transmission shafts are driven shafts. The driving shaft provides rotating power for the double-row chain wheel (driving chain wheel) connected with the driving shaft, the driving chain wheel is meshed with the chain to drive the chain to rotate, and the double-row chain wheel (driven chain wheel) connected with the driven shaft is driven by the driving shaft to rotate freely without interference, so that a circulating transmission ring is formed.

Each transmission shaft is sequentially provided with a plurality of double-row chain wheels, and the double-row chain wheels on the transmission shafts are respectively meshed with chains, so that the number of carriers transmitted in unit time is increased, and the transmission efficiency of the silicon wafers is improved.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic structural view of a furnace apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic structural view of a furnace apparatus according to another embodiment of the present invention;

FIG. 3 is a schematic structural view of a part of a furnace apparatus according to an embodiment of the present invention;

FIG. 4 is an enlarged schematic view of portion A of FIG. 3;

FIG. 5 is a schematic structural view of a heating apparatus according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a conveying device according to an embodiment of the present invention.

Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 6 is:

the furnace body 1, the first furnace body 11, the second furnace body 12, the first inner chamber 13, the second inner chamber 14, the cold air inlet 141, the compressed air inlet 142, the process chamber 15, the return hole 151, the air draft device 16, the wind wheel 161, the air blower 162, the flow equalizing plate 17, the first through hole 171, the second through hole 172, the exhaust pipe 19, the exhaust box 20, the heating element 21, the heating zone 22, the connecting port 23, the fire damper 24, the double-row chain 25, the double-row chain wheel 26, the transmission shaft 27, the driving shaft 271, the driven shaft 272, the carrier 28, the silicon wafer 29, the electrical control 30, the door panel 31, the heating device 40, the exhaust device 50, the transmission device 60, the guide rod 701 and the guide groove 702.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and thus the scope of the present invention is not limited by the specific embodiments disclosed below.

Furnace apparatus according to some embodiments of the invention will now be described with reference to figures 1 to 6 of the accompanying drawings. The furnace body device can be but is not limited to a drying furnace, a curing furnace and a drying curing furnace.

As shown in fig. 1, a furnace apparatus according to some embodiments of the present invention includes a heating device 40 and a transfer device 60.

The heating device 40 comprises a furnace body 1, a heating element 21 and an air draft device 16, wherein a first inner chamber 13 and a second inner chamber 14 which are communicated with each other are arranged in the furnace body 1, the first inner chamber 13 is suitable for being communicated with the process cavity 15, the heating element 21 is arranged in the second inner chamber 14, and the air draft device 16 is arranged on the furnace body 1 and is used for pumping gas in the second inner chamber 14 into the first inner chamber 13.

The transfer device 60 is at least partially arranged in the process chamber 15, the transfer device 60 comprising a transmission element on which the carrier 28 is arranged and a carrier 28 for moving the carrier 28 relative to the process chamber 15.

In the heating apparatus according to the above embodiment of the present invention, the heating member 21 is located in the second chamber 14, and the gas is preheated in the second chamber 14. The air draft device 16 pumps the preheated gas in the second inner chamber 14 to the first inner chamber 13, the hot air is further uniformly mixed in the first inner chamber 13, the first inner chamber 13 is communicated with the process chamber 15, and therefore the preheated gas enters the process chamber 15 to heat the silicon wafers passing through the process chamber 15.

Because the gas is preheated in the second inner chamber 14, the temperature of the gas is uniform and constant, and after the gas enters the process chamber 15, the temperature in the process chamber is uniform and constant, the drying and curing effect and the yield of the silicon wafer are improved, and the phenomenon of nonuniform temperature in the furnace chamber is avoided.

The heating member 21 may be a heating tube or a heating wire. Further, each second inner chamber 14 is provided with a plurality of heating tubes or a plurality of heating wires.

Further, as shown in fig. 4 and 5, the heating device includes: the flow distribution plate 17, the flow distribution plate 17 forms at least a part of the sidewall of the first inner chamber 13 and is used for separating the first inner chamber 13 from the process chamber 15, a plurality of first through holes 171 corresponding to the first inner chamber 13 are arranged on the flow distribution plate 17, and the first inner chamber 13 is communicated with the process chamber 15 through the first through holes 171.

The gas in the first inner chamber 13 flows into the process chamber 15 through the first through hole 171 by the air draft device 16, so that the first inner chamber 13 communicates with the process chamber 15.

Further, the number of the first through holes 171 is plural, and the plural first through holes 171 are uniformly distributed on the flow equalizing plate 17, so that the gas flow in the first inner chamber 13 can enter all places of the process chamber 15, and the uniformity of the temperature in the process chamber 15 is further improved.

Further, the first through hole 171 is reduced in sectional area in a direction in which the gas flows from the first inner chamber 13 to the process chamber 15.

The first through hole 171 has a large aperture near the first inner chamber 13 and a small aperture near the process chamber 15, and the hot air heated by the heating member 21 flows from the large aperture side to the small aperture side, thereby uniformly dispersing the hot air and reducing the flow resistance of the hot air.

Further, the first through hole 171 is gradually reduced in sectional area in a direction in which the gas flows from the first inner chamber 13 to the process chamber 15. For example, the first through hole 171 is a circular hole, the first through hole 171 is Y-shaped, and a surface of the first through hole 171 facing the first internal chamber 13 has a large aperture, and the aperture gradually decreases with depth, and does not change until completely penetrating the uniform flow plate 17 after decreasing to a predetermined value. It is understood that the first through hole 171 may have any shape other than a circular shape, such as a rectangle, an oval, etc.

Further, a second through hole 172 is formed on the flow equalizing plate 17, the second through hole 172 is disposed corresponding to the second inner chamber 14, and the second inner chamber 14 is communicated with the process chamber 15 through the second through hole 172.

The gas (mainly hot air) in the process chamber 15 flows back to the second inner chamber 14 through the second through hole 172, so that the circulation of the hot air is realized, the hot air is heated and used circularly, the heat loss is reduced, and the constant temperature in the furnace body 1 is ensured.

Further, the second inner chamber 14 is located at the periphery of the first inner chamber 13, and the second inner chamber 14 is enclosed by the surrounding wall of the first inner chamber 13 and the inner side wall of the furnace body 1, and the second through hole 172 is located at the periphery of the first through hole 171.

Further, the number of the second through holes 172 is plural, and the plural second through holes 172 are disposed at the edge of the flow distribution plate 17 and are uniformly disposed, for example, the flow distribution plate 17 is rectangular, and the plural second through holes 172 are uniformly distributed along the length direction or the width direction of the flow distribution plate 17.

Further, the opening area of the single second through hole 172 is larger than that of the single first through hole 171, and the second through hole 172 has a rectangular shape, a circular shape, or any other shape.

Further, the heating device includes: and an adjusting device disposed at the second through hole 172 for adjusting the opening size of the second through hole 172.

The adjusting device is used for adjusting the opening size of the second through hole 172 to control the amount of hot air flowing back from the process chamber 15 to the second inner chamber 14, so as to recycle the hot air, and further to control the temperature inside the furnace body 1 to be constant.

The adjusting device comprises a wind deflector and a plurality of screws or studs penetrating through the wind deflector, wherein the wind deflector slides relative to the screws or studs to adjust the size of the opening of the second through hole 172. Or, the adjusting device may be a wind deflector and a driving device for driving the wind deflector to move, the driving device may be a motor, a hydraulic cylinder, an air cylinder, or the like, and the driving device is connected to the wind deflector to drive the wind deflector to move relative to the second through hole 172, so as to adjust the size of the opening of the second through hole 172. Further, the wind deflector is arranged on the flow equalizing plate 17 and is rotatably or slidably connected with the flow equalizing plate 17.

In one embodiment, the flow distribution plate 17 is provided with an adjusting device on both sides thereof perpendicular to the process chamber 15 for adjusting the size of the second through holes 172.

Further, the air extraction device 16 includes a wind wheel 161 located in the first interior chamber 13 and a blower 162 located outside the first interior chamber 13.

The air extracting device 16 comprises a wind wheel 161 and a blower 162, and hot air in the second inner chamber 14 flows into the first inner chamber 13 and flows into the process chamber 15 under the action of the wind wheel 161 and the blower 162. The wind wheel 161 and the blower 162 are simple in structure and low in cost, and facilitate splicing of the plurality of heating zones 22. Further, the wind wheel and the blower are arranged in the up-down direction.

Further, the wind wheel 161 and the blower 162 are disposed perpendicular to the flow equalizing plate 17 and at the middle of the first inner chamber 13.

Furthermore, the number of the furnace bodies 1 is two, the furnace bodies are respectively a first furnace body 11 and a second furnace body 12 which are oppositely arranged, the first furnace body 11 and the second furnace body 12 enclose a process cavity 15, a cold air inlet 141 is arranged on the second inner chamber 14 of the first furnace body 11, and a compressed air inlet 142 is arranged on the second inner chamber 14 of the second furnace body 12.

The cold air inlet 141 is connected with a cold air inlet pipe, the compressed air inlet 142 is connected with a compressed air inlet pipe, and cold air enters the second inner chamber 14 of the first furnace body 11 from the cold air inlet pipe and is preheated into hot air by the heating element 21 in the second inner chamber 14. The compressed air enters the second inner chamber 14 of the second furnace body 12 through the compressed air inlet pipe and is heated into hot air by the heating element 21 in the second inner chamber 14.

The compressed air inlet 142 is arranged, so that the fresh air in the process chamber 15 can be supplemented by the compressed air entering from the compressed air inlet 142, the cleanness of the gas in the heating process chamber 15 is guaranteed, the quality of the air blown out from the first inner chamber 13 is guaranteed, the silicon wafer production is met, and the drying and curing effect and efficiency are improved.

Further, the first furnace body 11 and the second furnace body 12 are disposed up and down, for example, the first furnace body 11 is located above the second furnace body 12.

Further, the heating device comprises a plurality of heating zones 22, the plurality of heating zones 22 are sequentially spliced, each heating zone 22 comprises a first furnace body 11 and a second furnace body 12, a compressed air inlet 142 is arranged on the second inner chamber 14 of the second furnace body 12 of each heating zone 22, and the compressed air of each second inner chamber 14 is independently regulated.

Furthermore, a reflow hole 151 is formed in a sidewall of the process chamber 15, and the reflow hole 151 is used to communicate the process chamber 15 with the second inner chamber 14.

The hot air in the process chamber 15 flows back to the second inner chamber 14 through the return holes 151 and the second through holes 172, so that the hot air can be recycled.

Further, a plurality of reflow holes 151 are formed in the sidewall of the process chamber 15, and the reflow holes 151 are uniformly formed along the circumferential direction of the sidewall of the process chamber 15, so as to improve the reflow stability of the hot air in the process chamber 15 reflowing to the second inner chamber 14.

Further, a temperature detecting device is disposed in the process chamber 15 for detecting the temperature in the process chamber 15.

The temperature in the process chamber 15 is detected by the temperature detection device, the temperature detection device sends the detected temperature information to the temperature controller, and the temperature controller controls the process temperature in the process chamber 15 according to the received temperature information, so that the temperature in the process chamber 15 is accurately controlled.

The temperature detection device can be a temperature sensing probe or a temperature sensor.

Further, the heating means comprise at least one heating zone 22. When the heating device comprises a plurality of heating zones 22, at least one temperature detection device is arranged in each heating zone 22 to realize independent temperature control of each heating zone 22.

Further, the heating device includes: a waste pipe 19 communicating with the first inner chamber 13; and a waste discharge tank 20 communicating with the waste discharge pipe 19 and communicating with the outside.

The waste discharge pipe 19 is connected and communicated with the first inner chamber 13, a part of hot air in the first inner chamber 13 enters the waste discharge pipe 19, the hot air in the waste discharge pipe 19 enters the waste discharge box 20 and is discharged to the outside through the waste discharge box 20, so that a part of hot air in the first inner chamber 13 is discharged out of the furnace body 1, and the quality of air in the process chamber 15 is ensured.

Further, the heating device comprises a plurality of heating zones 22, the plurality of heating zones 22 are sequentially spliced, the second inner chamber 14 of the first furnace body 11 of each heating zone 22 is connected and communicated with the waste discharge pipe 19, and the waste discharge pipes 19 are collected and communicated with the waste discharge tank 20.

Furthermore, the waste discharge pipe is positioned at the upper end part of the furnace body, and the compressed air inlet is positioned at the lower end part of the furnace body.

Furthermore, one waste discharge box is connected with a plurality of waste discharge pipes which are transversely arranged.

As shown in fig. 1 to 5, the heating device includes a first furnace body 11, a second furnace body 12, a waste discharge pipe 19, and a waste discharge box 20, wherein the first furnace body 11 is located above the second furnace body 12; the first furnace body 11 and the second furnace body 12 are composed of a plurality of heating zones 22. Each single heating zone 22 comprises an air inlet pipe (compressed air inlet pipe) of the furnace body 1, a blower 162, a heating element, a wind wheel 161 and a uniform flow plate 17; the solar cell sheet is dried and cured in the process chamber 15 at the inlet of the heating device (arranged at the door panel 31) by the conveying device, and then moves to the outlet of the heating device.

The cold air is introduced from the cold air inlet 141 of the first furnace body 11, and the compressed air is introduced from the compressed air inlet 142 of the second furnace body 12 into the second inner chamber 14.

Compressed air for each heating zone 22 is regulated separately; a plurality of heating wires are arranged in the second inner chamber 14 to heat air; the air is heated and then the hot air in the second inner chamber 14 is pumped by the blower 162 and the wind wheel 161 and is pressed into the first inner chamber 13; the uniform flow plate 17 is provided with uniformly distributed Y-shaped holes (first through holes 171) in the central area and a plurality of strip holes (second through holes 172) on the four sides; the hot air with pressure in the second inner chamber 14 is uniformly introduced into the process chamber 15 through the Y-shaped hole in the center of the uniform flow plate 17, and is used for drying and curing the battery pieces in the process chamber 15.

A plurality of temperature detection devices (temperature sensing probes) are arranged in the process cavity 15, and the temperature values are fed back to the temperature controller for accurately controlling the process temperature in the process cavity 15.

The Y-shaped hole is characterized in that the aperture of one side is large, the aperture is gradually reduced along with the depth, the Y-shaped hole is not changed until the Y-shaped hole completely penetrates through the uniform flow plate 17 after being reduced to a set value, and hot air flows to one side of the small hole from one side of the large aperture, so that hot air is uniformly dispersed, and the effect of flow resistance is reduced.

The two side walls of the process chamber 15 are provided with a plurality of return holes 151, and the hot air in the process chamber 15 mainly passes through the return holes 151 and then returns to the second inner chamber 14 through the long holes on the periphery of the uniform flow plate 17; adjusting devices are arranged on two sides of the flow equalizing plate 17 in a direction perpendicular to the process cavity 15 and used for adjusting the ventilation size of the strip holes, hot air is pumped back to the second inner chamber 14 through the return holes 151 on the two side walls of the auxiliary furnace body 1, and hot air is recycled; a waste pipe 19 is connected to the second chamber 14 to exhaust a portion of the heated air from the oven to ensure air quality in the oven cavity.

Furthermore, a lifting device is arranged on the furnace body 1 to drive the first furnace body 11 to move up and down relative to the second furnace body 12.

The first furnace body 11 is driven by the lifting device to move up and down relative to the second furnace body 12, and when the lifting device drives the first furnace body 11 to move down relative to the second furnace body 12, the first furnace body 11 and the second furnace body 12 can be assembled to form a process cavity 15; when the first furnace body 11 moves upwards relative to the second furnace body 12, the first furnace body 11 is separated from the second furnace body 12, the first furnace body 11 is lifted, and equipment is conveniently maintained.

Further, the lifting device comprises an electric rod, a hydraulic cylinder, an air cylinder or an electromagnetic push rod.

The first furnace body 11 can be driven to move up and down relative to the second furnace body 12 through an electric rod, a hydraulic cylinder, an air cylinder or an electromagnetic push rod, and the lifting device is simple in structure and low in cost.

Furthermore, a guide part is arranged on the first furnace body 11, a guide matching part is arranged on the second furnace body 12, and the guide part is matched with the guide matching part to guide the first furnace body 11 to move up and down relative to the second furnace body 12.

The guide part is matched with the guide matching part to guide the first furnace body 11 to move up and down (move up and down) relative to the second furnace body 12, so that the first furnace body 11 can reciprocate up and down relative to the second furnace body 12, and the first furnace body 11 is prevented from shifting relative to the second furnace body 12 in the moving process.

Further, the guiding part comprises a guiding rod 701 arranged on the first furnace body 11, the guiding matching part comprises a guiding groove 702 arranged on the second furnace body 12, and the guiding rod 701 is positioned in the guiding groove 702 and moves up and down relative to the guiding groove 702; alternatively, the guide part includes a guide groove 702 provided on the first furnace body 11, the guide engagement part includes a guide rod 701 provided on the second furnace body 12, and the guide rod 701 is located in the guide groove 702 and moves up and down with respect to the guide groove 702.

When the first furnace body 11 moves up and down with respect to the second furnace body 12, the guide rod 701 is positioned in the guide groove 702 and moves up and down with respect to the guide groove 702 to guide the up-and-down movement of the first furnace body 11 with respect to the second furnace body 12.

Further, a guide groove 702 and a guide rod 701 are provided on the outer surface of the furnace body 1, the number of the guide grooves 702 is plural, the number of the guide rods 701 is equal to the number of the guide grooves 702 and corresponds to one, for example, the guide rods 701 and the guide grooves 702 are provided on both side surfaces of the furnace body 1, the guide rod 701 is a guide rod provided in the up-down direction, the guide groove 702 includes a first protrusion and a second protrusion, the first protrusion and the second protrusion are provided opposite to each other and define the guide groove 702.

Further, the furnace body equipment includes: the waste discharge device 50 comprises a waste discharge pipe 19, a waste discharge box 20 and a connecting port 23, wherein the waste discharge pipe 19 is communicated with at least one first inner chamber 13, the waste discharge box 20 is communicated between the waste discharge pipe 19 and the connecting port 23, and a gap communicated with the outside is formed between the connecting port 23 and the waste discharge box 20.

Further, the heating device 40 includes a plurality of heating zones 22, the plurality of heating zones 22 are sequentially connected, the first inner chamber 13 of the first furnace 11 of each heating zone 22 is connected and communicated with the waste discharge pipe 19, and the waste discharge pipes 19 are collected and communicated with the waste discharge tank 20.

Under the action of the driving force, the gas flows into the waste discharge box 20 from the waste discharge pipe 19 and then flows into the connecting port 23 from the waste discharge box 20, and a gap communicated with the outside is formed at the joint of the waste discharge box 20 and the connecting port 23, so that when the driving force is too large, the outside air can enter the connecting port 23 from the gap, and the phenomenon that the gas quantity in the process cavity 15 is insufficient due to the fact that too much gas in the second inner chamber 14 flows out to the connecting port 23 is avoided.

Further, a plurality of waste discharge pipes 19 are connected to one waste discharge tank 20 and are transversely arranged.

Further, the flow area of the connection port 23 decreases in the flow direction of the gas in the connection port 23.

The flow area of the connection port 23 is reduced in the direction of the gas flowing through the connection port 23, and this has the effect of reducing the flow resistance of the gas flowing through the connection port 23 by making the gas flow uniformly and smoothly through the connection port 23.

Further, the flow area of the connection port 23 gradually decreases in the flow direction of the gas in the connection port 23, for example, the connection port 23 is flared.

Further, the waste device 50 includes a fire damper 24, the fire damper 24 is connected to an end of the connection port 23 facing away from the waste tank 20, and the fire damper 24 is used to open or close the connection port 23.

The gas flows through the exhaust pipe 19, the exhaust box 20, the connection port 23, and the fire damper 24 in order. When the gas temperature in the second inner chamber 14 or the process chamber 15 is too high to exceed the preset temperature value, the fire-proof valve 24 is closed to isolate the heat source, thereby preventing damage to some parts of the high-temperature gas equipment. When the temperature of the gas in the second inner chamber 14 or the process chamber 15 is low or equal to a preset temperature value, the fire damper 24 is opened so that the gas can flow through the fire damper 24.

Further, a waste discharge device 50 is provided on the first furnace body 11, and the waste discharge pipe 19 communicates with the first inner chamber 13 of the first furnace body 11.

The compressed air inlet 142 is arranged on the second furnace body 12, and the waste discharge device 50 is arranged on the first furnace body 11, so that the interference between the compressed air inlet 142 and the waste discharge device 50 is avoided, and the arrangement of the compressed air inlet 142 and the waste discharge device 50 is convenient.

Further, the first furnace body 11 is located above the second furnace body 12, and the waste discharge device 50 is located above the compressed air inlet 142.

Further, the carrier 28 includes a supporting plate, and a positioning member and a fixing member disposed on the supporting plate, the positioning member is used for supporting the bottom of the silicon wafer 29, the fixing member and the positioning member are disposed on the same side of the supporting plate, and the fixing member is used for limiting the side edge of the silicon wafer 29 and enabling the silicon wafer 29 to be driven in a side-up manner in the carrier 28.

The fixing piece and the positioning piece are arranged on the same side of the supporting plate, so that the silicon wafer 29 can be conveyed by the carrier 28 in a side-standing mode, the conveying requirement is met, the working efficiency of drying, curing and the like is effectively improved, the silicon wafer 29 is conveyed into the furnace body 1, the front surface and the back surface of the silicon wafer 29 can be heated, dried and cured, the process time is shortened, and the drying, curing and the yield are improved.

Further, the fixing piece comprises a first connecting rod and a second connecting rod which are arranged oppositely, the first connecting rod and the second connecting rod are arranged on the supporting plate, the fixing piece further comprises an ear support portion arranged between the first connecting rod and the second connecting rod, the ear support portion is located on one side, away from the positioning piece, of the first connecting rod and the second connecting rod and limits an opening groove with an opening facing the positioning piece, and the ear support portion is used for limiting the side edge of the silicon wafer 29.

The fixing piece stands on the end of the supporting plate, an ear support part is arranged at one end, far away from the supporting plate, of the fixing piece, the corresponding side edge of the silicon wafer 29 is surrounded by the ear support part, the ear support part is in contact with the side edge of the silicon wafer 29, the middle of the silicon wafer 29 is prevented from being contacted, printing on the silicon wafer 29 is effectively protected, and the yield of products and the photoelectric efficiency are improved.

The fixing part is of a bent structure of the rod body, the fixing part is provided with a first connecting rod and a second connecting rod which are spaced front and back, a gap between the first connecting rod and the second connecting rod is matched with the silicon wafer 29 and is placed vertically, and one ends, far away from the supporting plate, of the first connecting rod and one ends, far away from the supporting plate, of the second connecting rod are connected together through the lug support parts. The structure is simple and the manufacture is easy. Furthermore, the ear support parts are in a V-shaped side wing shape, so that the width size of the silicon wafer 29 is met, the corresponding side edges of the silicon wafer 29 are surrounded by the ear support parts and are properly supported, the silicon wafer 29 is conveyed in a side standing mode, and the conveying requirement is met.

Furthermore, the supporting plate and the fixing piece are combined into a concave shape, the supporting plate and the silicon wafer 29 are arranged in a cross mode in the conveying direction, the upper side face of the supporting plate and the fixing piece surround to meet the requirement that the silicon wafer 29 is placed on the side in a vertical mode, the fixing piece is in contact with the edge of the silicon wafer 29, the middle of the silicon wafer 29 is prevented from being in contact with, and printing on the silicon wafer 29 is effectively protected.

After the first connecting rod and the second connecting rod extend outwards towards the two ends along the axial direction (length direction) of the supporting plate, a V-shaped lug support part is formed and provided with a V-shaped groove so as to place the silicon wafer 29, and the possibility of scratching the battery wafer (the silicon wafer 29) is reduced.

Further, as shown in fig. 6, the transmission member includes a duplex chain 25, a duplex sprocket 26 and a transmission shaft 27, the duplex sprocket 26 is engaged with the duplex chain 25, and the transmission shaft 27 passes through the duplex sprocket 26 and is used for driving the duplex sprocket 26 to rotate; the number of the transmission shafts 27 is plural, wherein at least one of the transmission shafts 27 is a driving shaft 271, so as to form a transmission cycle, and each of the transmission shafts 27 is sequentially provided with a plurality of double-row sprockets 26, and the number of the double-row chains 25 is equal to the number of the double-row sprockets 26 arranged on the transmission shaft 27 and corresponds to one another.

The carrier 28 is connected to the middle chain plate so as to move along with the chain, and the silicon wafer 29 is driven. The double-row chain 25 is adopted for transmission, so that the stability and the accuracy of transmission can be improved.

The double-row chain 25 comprises outer chain plates, a pin shaft, a middle chain plate and inner chain plates, wherein the two outer chain plates are connected through the pin shaft to form an outer chain link, the middle chain plate is arranged on the pin shaft between the two outer chain plates, and an inner chain link is arranged between the middle chain plate and the outer chain plates and comprises an inner chain plate.

The double row sprocket 26 comprises two sprockets oppositely disposed, and further, symmetrically disposed. One sprocket of the duplex sprocket 26 is engaged with one chain of the duplex chain 25, and the other sprocket of the duplex sprocket 26 is engaged with the other chain of the duplex chain 25 to drive the duplex chain 25 to move smoothly.

Further, the number of the transmission shafts 27 is plural, wherein at least one of the transmission shafts 27 is a driving shaft 271 to form a transmission cycle, and each of the transmission shafts 27 is sequentially provided with a plurality of double-row sprockets 26, and the number of the double-row chains 25 is equal to and corresponds to the number of the double-row sprockets 26 provided on the transmission shaft 27.

At least one of the plurality of transmission shafts 27 is a driving shaft 271, and the others are driven shafts 272. The driving shaft 271 provides the rotating power for the duplex sprocket 26 (driving sprocket) connected with it, the driving sprocket is engaged with the chain to drive the chain to rotate, the duplex sprocket 26 (driven sprocket) connected with the driven shaft 272 freely rotates without interference under the driving of the driving shaft 271, and a circulating transmission ring is formed.

Each transmission shaft 27 is sequentially provided with a plurality of double-row chain wheels 26, and the double-row chain wheels 26 on the transmission shafts 27 are respectively meshed with chains, so that the number of the conveying carriers 28 in unit time is increased, and the conveying efficiency of the silicon wafers 29 is improved.

The furnace apparatus includes a single or multiple heating devices 40, actuators, electrical controls 30, and a single or multiple waste devices 50.

In a specific embodiment, the heating device 40 comprises an upper furnace body 1 (a first furnace body 11) and a lower furnace body 1 (a second furnace body 12), the lower furnace body 1 is fixed on the rack, the upper furnace body 1 is arranged above the lower furnace body 1, and an upper furnace pipe can be supported and lifted through four electric rods, so that the equipment maintenance is facilitated; two side surfaces of the upper furnace body 1 and the lower furnace body 1 are guided to move up and down on the upper furnace body 1 by four guide rods 701; the upper furnace body 1 is lowered by an electric rod and combined with the lower furnace body 1 to form a process cavity 15, and the battery piece is dried and solidified in the process cavity 15.

The conveyor 60 is constructed based on a chain drive, including a duplex sprocket 26, a duplex chain 25 and a carrier 28. The double row chain 25 passes through the process chamber 15 and the battery plates are transported from the inlet of the furnace apparatus through the process chamber 15 of the heating device 40 to the outlet by means of carriers 28 mounted on the double row chain 25.

Each double-row chain 25 is connected end to end, and each double-row chain 25 is meshed with four double-row chain wheels 26 to form a circulating chain ring; the four double-row chain wheels 26 are composed of a driving chain wheel and three driven chain wheels, the driving chain wheel provides rotation power by a driving shaft 271, and the driven chain wheels rotate freely without interference; each carrier 28 is arranged on the middle chain plate of the double-row chain 25, and each carrier 28 carries materials independently; four rows of double-row chain wheels 26 are mounted in parallel on each transmission shaft 27.

The waste discharge device 50 includes a waste discharge pipe 19, a waste discharge tank 20, a connection port 23, and a fire damper 24. The waste pipe 19 is connected to the inside of the second inner chamber 14 of the heating device 40 to discharge a part of the hot air in the second inner chamber 14, so that clean cold air enters the second inner chamber 14, and the quality of the hot air in the second inner chamber 14 is guaranteed to be clean.

In summary, the device (furnace body device) for drying and curing the silicon wafer 29 provided by the embodiment of the invention can realize uniform temperature inside the furnace chamber, meet the requirement of production of the HIT solar photovoltaic cell silicon wafer 29, and improve drying and curing effects and yield. Specifically, the method comprises the following steps:

1. the air is preheated in the second inner chamber 14 and then uniformly blown into the process chamber 15, so that the temperature of the air blown into the process chamber 15 is consistent, and the temperature in the process chamber 15 is ensured to be more uniform and constant.

2. The hot air is used for heating circularly, so that the heat loss is reduced, and the constant temperature in the process cavity 15 is ensured.

3. The heating area 22 of each unit is provided with a fresh air supplement structure (compressed air inlet 142) and a waste gas exhaust structure (waste discharge device 50), and the gas in the heating process chamber 15 is ensured to be clean through the circulation of the air inside.

In the description of the present invention, the term "plurality" means two or more unless explicitly specified or limited otherwise; the terms "connected," "secured," and the like are to be construed broadly and unless otherwise stated or indicated, and for example, "connected" may be a fixed connection, a removable connection, an integral connection, or an electrical connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description of the present specification, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or unit must have a specific direction, be configured and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A furnace apparatus, characterized by comprising:

the heating device comprises a furnace body, a heating element and an air draft device, wherein a first inner chamber and a second inner chamber which are communicated are arranged in the furnace body, the first inner chamber is suitable for being communicated with the process cavity, the heating element is arranged in the second inner chamber, and the air draft device is arranged on the furnace body and used for pumping gas in the second inner chamber into the first inner chamber;

the conveying device is at least partially arranged in the process cavity and comprises a transmission part and a carrier, the carrier is used for bearing the silicon wafer and arranged on the transmission part, and the transmission part is used for driving the carrier to move relative to the process cavity.

2. The furnace apparatus according to claim 1,

the number of the furnace bodies is two, the furnace bodies are respectively a first furnace body and a second furnace body which are oppositely arranged, the process cavity is enclosed by the first furnace body and the second furnace body, a cold air inlet is arranged in the second inner chamber of the first furnace body, and a compressed air inlet is arranged in the second inner chamber of the second furnace body.

3. The furnace apparatus according to claim 2,

and the furnace body is provided with a lifting device to drive the first furnace body to move up and down relative to the second furnace body, wherein the lifting device comprises an electric rod or a hydraulic cylinder or an air cylinder or an electromagnetic push rod.

4. The furnace apparatus according to claim 2,

the first furnace body is provided with a guide part, the second furnace body is provided with a guide matching part, and the guide part is matched with the guide matching part so as to guide the first furnace body to move up and down relative to the second furnace body.

5. The furnace apparatus according to claim 4,

the guide part comprises a guide rod arranged on the first furnace body, the guide matching part comprises a guide groove arranged on the second furnace body, and the guide rod is positioned in the guide groove and moves up and down relative to the guide groove; or

The guide part comprises a guide groove formed in the first furnace body, the guide matching part comprises a guide rod arranged on the second furnace body, and the guide rod is located in the guide groove and moves up and down relative to the guide groove.

6. The furnace apparatus according to claim 1, comprising:

the flow homogenizing plate forms at least part of the side wall of the first inner chamber and is used for separating the first inner chamber from the process chamber, a first through hole and a second through hole are formed in the flow homogenizing plate, the first through hole corresponds to the first inner chamber, the first inner chamber is communicated with the process chamber through the first through hole, the second through hole corresponds to the second inner chamber, and the second inner chamber is communicated with the process chamber through the second through hole; the number of the first through holes is multiple, the cross-sectional area of each first through hole is reduced along the direction that gas flows from the first inner chamber to the process chamber, and the opening area of each first through hole is smaller than that of each second through hole.

7. The furnace apparatus according to any one of claims 2 to 6, comprising:

the waste discharge device comprises a waste discharge pipe, a waste discharge box, a connecting port and a fire prevention valve, the waste discharge pipe is communicated with at least one first inner chamber, the waste discharge box is communicated between the waste discharge pipe and the connecting port, a gap communicated with the outside is formed between the connecting port and the waste discharge box, the fire prevention valve is connected to one end, deviating from the waste discharge box, of the connecting port, and the fire prevention valve is used for opening or closing the connecting port;

wherein a flow area of the connection port decreases in a flow direction of the gas in the connection port.

8. The furnace apparatus according to claim 7,

the waste discharge device is arranged on the first furnace body, and the waste discharge pipe is communicated with the first inner chamber of the first furnace body.

9. The furnace apparatus according to any one of claims 1 to 6,

the carrier comprises a supporting plate, a positioning piece and a fixing piece, wherein the positioning piece and the fixing piece are arranged on the supporting plate, the positioning piece is used for supporting the bottom of the silicon wafer, the fixing piece and the positioning piece are arranged on the same side of the supporting plate, and the fixing piece is used for limiting the side edge of the silicon wafer and enabling the silicon wafer to be in side-up transmission in the carrier.

10. The furnace apparatus according to any one of claims 1 to 6,

the transmission part comprises a double-row chain, a double-row chain wheel and a transmission shaft, the double-row chain wheel is meshed with the double-row chain, and the transmission shaft penetrates through the double-row chain wheel and is used for driving the double-row chain wheel to rotate;

the number of the transmission shafts is multiple, at least one transmission shaft is a driving shaft to form transmission circulation, each transmission shaft is sequentially provided with a plurality of double-row chain wheels, and the number of the double-row chains is equal to that of the double-row chain wheels arranged on one transmission shaft and corresponds to that of the double-row chain wheels one by one.