CN110767580A - Micro light-emitting diode correction substrate, display panel and preparation method of display panel - Google Patents
Micro light-emitting diode correction substrate, display panel and preparation method of display panel Download PDFInfo
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- CN110767580A CN110767580A CN201911054899.4A CN201911054899A CN110767580A CN 110767580 A CN110767580 A CN 110767580A CN 201911054899 A CN201911054899 A CN 201911054899A CN 110767580 A CN110767580 A CN 110767580A
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- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 238000012937 correction Methods 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Power Engineering (AREA)
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application discloses a micro light-emitting diode correction substrate, a display panel and a preparation method of the display panel, which are used for correcting a micro light-emitting diode and improving the light-emitting uniformity. The utility model provides a little emitting diode revises base plate, little emitting diode revises base plate includes: a first substrate, a correction layer located over the first substrate; the correction layer is provided with first openings which are arranged in an array mode, the first openings are parallel to all sections of the first substrate, the minimum area of each section is smaller than the area of the orthographic projection of the micro light-emitting diode to be corrected on the first substrate, and the maximum area of each section is larger than the area of the orthographic projection of the micro light-emitting diode on the first substrate; the first openings correspond to the micro light-emitting diodes one to one.
Description
Technical Field
The application relates to the technical field of display, in particular to a micro light-emitting diode correction substrate, a display panel and a preparation method of the micro light-emitting diode correction substrate.
Background
Micro light emitting diode (Micro LED) display is a new generation display technology, and compared with the existing Organic Light Emitting Diode (OLED) display technology, the display technology has the advantages of higher brightness, better luminous efficiency and lower power consumption. After the Micro LED display panel is manufactured at present, due to inherent limitation of transfer printing precision, the angles of the Micro LED in the horizontal direction and the vertical direction are not uniform after the Micro LED is transferred, and therefore when the Micro LED is lightened, the problem that the luminous uniformity is influenced by the uneven angles and further the display effect is influenced exists.
Disclosure of Invention
The embodiment of the application provides a micro light-emitting diode correction substrate, a display panel and a preparation method of the display panel, which are used for correcting a micro light-emitting diode and improving the light-emitting uniformity.
The utility model provides a little emitting diode revises base plate, little emitting diode revises base plate includes: a first substrate, a correction layer located over the first substrate;
the correction layer is provided with first openings which are arranged in an array mode, the first openings are parallel to all sections of the first substrate, the minimum area of each section is smaller than the area of the orthographic projection of the micro light-emitting diode to be corrected on the first substrate, and the maximum area of each section is larger than the area of the orthographic projection of the micro light-emitting diode on the first substrate;
the first openings correspond to the micro light-emitting diodes one to one.
The correction substrate for the micro light-emitting diode provided by the embodiment of the application has simple structure and simple manufacturing process, and the correction layer has first openings corresponding to the micro light-emitting diodes to be corrected one by one, and the first openings are parallel to each section of the first substrate, the minimum area of the cross section is smaller than the area of the orthographic projection of the micro light-emitting diode on the first substrate, the maximum area of the cross section is larger than the area of the orthographic projection of the micro light-emitting diode on the first substrate, when the micro light-emitting diode correction substrate provided by the application is aligned and pressed with the array substrate transferred with the micro light-emitting diodes, the micro light-emitting diodes are contacted with the correction layer of the first opening region, therefore, after the correction substrate and the array substrate are pressed, the angles of the micro light-emitting diodes can be corrected, and the influence of the angles of the micro light-emitting diodes in the horizontal direction and the vertical direction on the display uniformity is avoided.
Optionally, the first opening and the correction layer have a boundary, the boundary and a plane where the first substrate is located have an included angle, and an area of a cross section of the first opening parallel to the first substrate increases with distance from the first substrate.
Optionally, the included angle is 20 ° to 80 °.
Optionally, the thickness of the correction layer is smaller than or equal to the thickness of the micro light emitting diode.
Optionally, the thickness of the correction layer is 2 to 5 micrometers.
Optionally, the shape of the orthographic projection of the first opening on the first substrate is a rectangle, a trapezoid or a parallelogram.
Optionally, the material of the correction layer is an organic resin material or a metal material.
The embodiment of the application provides a preparation method of a micro light-emitting diode display panel, which comprises the following steps:
transferring the micro light emitting diode to an array substrate;
the micro light-emitting diode correction substrate provided by the embodiment of the application is provided, the micro light-emitting diode correction substrate and the array substrate are in counterpoint pressing, and the angle of the micro light-emitting diode on the array substrate is corrected.
According to the method for manufacturing the micro light-emitting diode display panel, after the micro light-emitting diodes are transferred to the array substrate, the angle of the micro light-emitting diodes is corrected by using the micro light-emitting diode correction substrate provided by the embodiment of the application, so that the influence of the angle of the micro light-emitting diodes in the horizontal direction and the vertical direction on the display uniformity can be avoided.
Optionally, the aligning and pressing the micro light emitting diode correction substrate and the array substrate to correct the angle of the micro light emitting diode on the array substrate specifically includes:
aligning the array substrate and the correction substrate of the micro light-emitting diode by using a dripping injection device;
and pressing the array substrate and the micro light-emitting diode correction substrate to enable the micro light-emitting diode to be positioned in the first opening, and correcting the angle of the micro light-emitting diode.
According to the preparation method of the micro light-emitting diode, the angle of the micro light-emitting diode can be corrected by using the existing low injection equipment, equipment required for correction does not need to be additionally designed, and the cost can be saved.
The micro light-emitting diode display panel provided by the embodiment of the application is manufactured by adopting the method provided by the embodiment of the application.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a micro light emitting diode alignment substrate according to an embodiment of the present disclosure;
fig. 2 is a schematic view illustrating alignment of a micro light emitting diode alignment substrate and a micro light emitting diode according to an embodiment of the present disclosure;
fig. 3 is a top view of a micro led correction substrate according to an embodiment of the present disclosure;
fig. 4 is a schematic perspective view of a first opening region of a correction substrate for a micro light emitting diode according to an embodiment of the present disclosure;
fig. 5 is a schematic view illustrating a method for manufacturing a correction substrate for a micro light emitting diode according to an embodiment of the present disclosure;
fig. 6 is a schematic view of a method for manufacturing a micro light emitting diode according to an embodiment of the present disclosure.
Detailed Description
The embodiment of the present application provides a micro light emitting diode correction substrate, as shown in fig. 1, the micro light emitting diode correction substrate includes: a first substrate 1, a correction layer 2 located on the first substrate 1;
the correction layer 2 is provided with first openings 3 which are arranged in an array, the first openings 3 are parallel to each section of the first substrate 1, the minimum area of the section is smaller than the area of the orthographic projection of the micro light-emitting diode 4 to be corrected on the first substrate, and the maximum area of the section is larger than the area of the orthographic projection of the micro light-emitting diode 4 on the first substrate;
the first openings 3 correspond to the micro light emitting diodes 4 one to one.
It should be noted that, in the process of manufacturing the micro light emitting diode display panel, the micro light emitting diodes need to be transferred to the array substrate, and the transfer process may cause the position deviation of the micro light emitting diodes in the direction perpendicular to the plane of the array substrate and the square direction parallel to the plane of the array substrate, and the angles of the micro light emitting diodes may appear in the horizontal direction or the vertical direction, so that the angles of the micro light emitting diodes in the horizontal direction and the vertical direction are not uniform, which affects the display uniformity. As shown in fig. 2, the micro-leds 4 are transferred onto the array substrate 5 in contact with the connection terminals 6. When the micro light emitting diode correction substrate provided by the embodiment of the application is used for correcting the angle of the micro light emitting diode, the correction substrate is aligned with the array substrate, so that the micro light emitting diode 4 is located in the area where the first opening 3 is located.
The correction substrate for the micro light-emitting diode provided by the embodiment of the application has simple structure and simple manufacturing process, and the correction layer has first openings corresponding to the micro light-emitting diodes to be corrected one by one, and the first openings are parallel to each section of the first substrate, the minimum area of the cross section is smaller than the area of the orthographic projection of the micro light-emitting diode on the first substrate, the maximum area of the cross section is larger than the area of the orthographic projection of the micro light-emitting diode on the first substrate, when the micro light-emitting diode correction substrate provided by the application is aligned and pressed with the array substrate transferred with the micro light-emitting diodes, the micro light-emitting diodes are contacted with the correction layer of the first opening region, therefore, after the correction substrate and the array substrate are pressed, the angles of the micro light-emitting diodes can be corrected, and the influence of the angles of the micro light-emitting diodes in the horizontal direction and the vertical direction on the display uniformity is avoided.
Optionally, as shown in fig. 2, the first opening 3 and the modification layer 2 have a boundary 7, the boundary 7 has an included angle 8 with a plane of the first substrate 1, and an area of a cross section of the first opening 3 parallel to the first substrate 1 increases with distance from the first substrate 1.
Therefore, the area of the cross section closest to the first substrate is the smallest, the area of the cross section farthest from the first substrate is the largest, the area of the cross section closest to the first substrate is smaller than the area of the micro light-emitting diode, and the area of the cross section farthest from the first substrate is larger than the area of the micro light-emitting diode, so that the micro light-emitting diode can be contacted with the correction layer in the area of the first opening, and the angle of the micro light-emitting diode can be corrected by the micro light-emitting diode correction substrate conveniently.
Optionally, the included angle is 20 ° to 80 °.
Optionally, the thickness of the correction layer is smaller than or equal to the thickness of the micro light emitting diode.
Therefore, the correction layer can be prevented from contacting with the area of the array substrate where the micro light-emitting diodes are not arranged, and the angle of the micro light-emitting diodes cannot be corrected.
Optionally, the thickness of the correction layer is 2 to 5 micrometers.
Optionally, the shape of the orthographic projection of the first opening on the first substrate is a rectangle, a trapezoid or a parallelogram.
Taking the shape of the orthographic projection of the first opening on the first substrate as an example, the top view of the micro light emitting diode correction substrate provided by the embodiment of the application is shown in fig. 3, and the area circled by the dotted line in fig. 3 corresponds to the area of the first opening. Taking a region corresponding to one first opening as an example, a perspective view of the micro light emitting diode correction substrate provided in the embodiment of the present application is shown in fig. 4. When the shape of the first opening in the orthographic projection of the first substrate is rectangular, as shown in fig. 1 and 2, the shape of the first opening in the cross section perpendicular to the first substrate is trapezoidal.
Optionally, the material of the correction layer is an organic resin material or a metal material.
When the material of the correction layer is a metal material, for example, a metal material such as copper or aluminum may be selected.
Optionally, the first substrate is a glass substrate.
Next, an example of preparing a micro light emitting diode correction substrate provided in the embodiment of the present application is illustrated, and as shown in fig. 5, the preparation of the micro light emitting diode correction substrate includes the following steps:
s101, providing a first substrate;
s102, forming a whole layer of correction layer on the first substrate;
s103, arranging first openings in an administrative array on the correction layer by adopting a patterning process, wherein the first openings correspond to the micro light-emitting diodes to be corrected one by one.
Optionally, forming an entire correction layer on the first substrate specifically includes:
coating a resin on a first substrate;
alternatively, a metal material is deposited on the first substrate.
The first opening is formed, for example, to perform an exposure and development process on the resin layer, or to coat a photoresist on the metal layer, and to perform an exposure, development, and etching process.
Based on the same inventive concept, an embodiment of the present application further provides a method for manufacturing a micro light emitting diode display panel, as shown in fig. 6, the method includes:
s201, transferring the micro light-emitting diode to an array substrate;
s202, providing the micro light-emitting diode correction substrate provided by the embodiment of the application, aligning and pressing the micro light-emitting diode correction substrate and the array substrate, and correcting the angle of the micro light-emitting diode on the array substrate.
According to the method for manufacturing the micro light-emitting diode display panel, after the micro light-emitting diodes are transferred to the array substrate, the angle of the micro light-emitting diodes is corrected by using the micro light-emitting diode correction substrate provided by the embodiment of the application, so that the influence of the angle of the micro light-emitting diodes in the horizontal direction and the vertical direction on the display uniformity can be avoided.
Optionally, the aligning and pressing the micro light emitting diode correction substrate and the array substrate to correct the angle of the micro light emitting diode on the array substrate specifically includes:
aligning the array substrate and the correction substrate of the micro light-emitting diode by using a dripping injection device;
and pressing the array substrate and the micro light-emitting diode correction substrate to enable the micro light-emitting diode to be positioned in the first opening, and correcting the angle of the micro light-emitting diode.
According to the preparation method of the micro light-emitting diode, the angle of the micro light-emitting diode can be corrected by using the existing low injection equipment, equipment required for correction does not need to be additionally designed, and the cost can be saved.
Optionally, the pressing the array substrate and the micro light emitting diode correction substrate specifically includes:
and providing a preset condition by using underground injection equipment, and pressing the array substrate and the micro light-emitting diode correction substrate under the preset condition.
The preset condition may be, for example, a temperature condition, or a vibration condition. The specific temperature and vibration frequency can be selected according to actual needs.
The micro light-emitting diode display panel provided by the embodiment of the application is manufactured by adopting the method provided by the embodiment of the application.
In summary, the micro led modified substrate, the micro led manufacturing method and the micro led display panel provided in the embodiments of the present application have the advantages that the structure of the micro led modified substrate is simple, the manufacturing process is simple, the modified layer has the first openings corresponding to the micro leds to be modified one by one, the first openings are parallel to each cross section of the first substrate, the minimum area of the cross section is smaller than the area of the micro leds in the orthographic projection of the first substrate, the maximum area of the cross section is larger than the area of the micro leds in the orthographic projection of the first substrate, when the micro led modified substrate provided in the present application is aligned with the array substrate to which the micro leds are transferred, the micro leds are in contact with the modified layer of the first opening area, so that after the modified substrate is pressed with the array substrate, the angle of the micro light-emitting diode can be corrected, and the influence of the angle of the micro light-emitting diode in the horizontal direction and the vertical direction on the display uniformity is avoided.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (10)
1. A micro light emitting diode correction substrate, comprising: a first substrate, a correction layer located over the first substrate;
the correction layer is provided with first openings which are arranged in an array mode, the first openings are parallel to all sections of the first substrate, the minimum area of each section is smaller than the area of the orthographic projection of the micro light-emitting diode to be corrected on the first substrate, and the maximum area of each section is larger than the area of the orthographic projection of the micro light-emitting diode on the first substrate;
the first openings correspond to the micro light-emitting diodes one to one.
2. The modified substrate of claim 1, wherein the first opening and the modified layer have a boundary, the boundary forms an angle with a plane of the first substrate, and an area of a cross section of the first opening parallel to the first substrate increases with distance from the first substrate.
3. The micro light-emitting diode modified substrate as claimed in claim 1, wherein the included angle is 20 ° to 80 °.
4. A micro-led modified substrate of claim 1, wherein the thickness of the modified layer is less than or equal to the thickness of the micro-led.
5. A micro LED modified substrate according to claim 4, wherein the thickness of the modified layer is 2-5 μm.
6. A micro led modified substrate of claim 1, wherein the shape of the orthographic projection of the first opening on the first substrate is rectangular, trapezoidal or parallelogram.
7. The correction substrate for micro light-emitting diode as claimed in claim 1, wherein the material of the correction layer is organic resin material or metal material.
8. A method for manufacturing a micro light emitting diode display panel is characterized by comprising the following steps:
transferring the micro light emitting diode to an array substrate;
providing the micro light-emitting diode correction substrate according to any one of claims 1 to 7, and aligning and pressing the micro light-emitting diode correction substrate and the array substrate to correct the angle of the micro light-emitting diode on the array substrate.
9. The method according to claim 8, wherein the step of pressing the micro light emitting diode correction substrate against the array substrate to correct the angle of the micro light emitting diode on the array substrate comprises:
aligning the array substrate and the correction substrate of the micro light-emitting diode by using a dripping injection device;
and pressing the array substrate and the micro light-emitting diode correction substrate to enable the micro light-emitting diode to be positioned in the first opening, and correcting the angle of the micro light-emitting diode.
10. A micro-led display panel, characterized in that it is manufactured by the method of claim 8 or 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911054899.4A CN110767580B (en) | 2019-10-31 | 2019-10-31 | Micro light-emitting diode correction substrate, display panel and preparation method of micro light-emitting diode correction substrate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911054899.4A CN110767580B (en) | 2019-10-31 | 2019-10-31 | Micro light-emitting diode correction substrate, display panel and preparation method of micro light-emitting diode correction substrate |
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| CN110767580A true CN110767580A (en) | 2020-02-07 |
| CN110767580B CN110767580B (en) | 2022-10-04 |
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| CN112802792A (en) * | 2021-02-07 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Micro light emitting diode transfer equipment and transfer method thereof |
| CN113376886A (en) * | 2021-06-30 | 2021-09-10 | 武汉华星光电技术有限公司 | Display panel, biological detection method and display device |
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| CN110767580B (en) | 2022-10-04 |
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