CN110757287A - Chamfer grinding wheel, preparation method thereof and wafer processing equipment - Google Patents
Chamfer grinding wheel, preparation method thereof and wafer processing equipment Download PDFInfo
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- CN110757287A CN110757287A CN201911017145.1A CN201911017145A CN110757287A CN 110757287 A CN110757287 A CN 110757287A CN 201911017145 A CN201911017145 A CN 201911017145A CN 110757287 A CN110757287 A CN 110757287A
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- grinding wheel
- chamfer
- chamfer grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/18—Wheels of special form
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention provides a chamfer grinding wheel, a preparation method thereof and wafer processing equipment, and belongs to the technical field of semiconductors. The preparation method of the chamfer grinding wheel comprises the following steps: providing a chamfer grinding wheel matrix, wherein the peripheral surface of the chamfer grinding wheel matrix is provided with at least two grooves arranged along the peripheral direction of the chamfer grinding wheel matrix; forming a transition metal layer in the groove; and then forming a diamond coating on the transition metal layer by using a chemical vapor deposition method.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chamfering grinding wheel, a preparation method thereof and wafer processing equipment.
Background
Wafers (wafers), the most basic material in the semiconductor field, can be fabricated into various circuit device structures, and become integrated circuit products with specific electrical functions. The wafer is processed and formed for many times through crystal growth (Growing), Slicing (Slicing), chamfering (Edge Grinding), Grinding (Lapping), Polishing (Polishing), Cleaning (Cleaning) and the like, and finally the surface which meets the requirements of flatness and roughness is obtained. In the wafer production process, the edge treatment of the silicon wafer is important, the edge small cracks or cracks on the edge can generate mechanical stress on the silicon wafer, so that dislocation is generated, harmful contamination accumulation and shedding are caused, in addition, the edge dislocation can also cause the edge dislocation growth in high-temperature treatment or surface epitaxy, and the excellent chamfering process can ensure that the edge of the silicon wafer obtains a smooth radius contour, and the influence is reduced to the minimum.
The existing wafer edge chamfer is formed by oppositely grinding with a chamfer grinding wheel groove with a diamond coating, the diameter of the chamfer grinding wheel is generally within 300mm, the chamfer grinding wheel is made of iron, the position of the chamfer grinding wheel is fixed and rotates at a high speed, and the high-speed rotation brings grinding force and a large amount of heat, so that the diamond coating is stripped. The hardness of the diamond is much higher than that of the monocrystalline silicon, so that the peeled diamond particles scratch the edge surface of the wafer and simultaneously scratch the diamond coating in the chamfer grinding wheel groove. Meanwhile, the material of the chamfering grinding wheel consists of iron element, and the iron element can promote the oxidation reaction of the diamond under the condition of high temperature, and the reaction is shown as formula 1-1, thereby further causing the damage of the diamond coating.
Diamond → graphite formula (1-1)
Disclosure of Invention
The invention aims to provide a chamfering grinding wheel, a preparation method thereof and wafer processing equipment, which can effectively improve the bonding strength of diamond and the chamfering grinding wheel, and further improve the grinding or polishing processing quality of the edge of a silicon wafer.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, an embodiment of the present invention provides a method for manufacturing a chamfered grinding wheel, including:
providing a chamfer grinding wheel matrix, wherein the peripheral surface of the chamfer grinding wheel matrix is provided with at least two grooves arranged along the peripheral direction of the chamfer grinding wheel matrix;
forming a transition metal layer in the groove;
and forming a diamond coating on the transition metal layer by using a chemical vapor deposition method.
Optionally, after forming the diamond coating, the method further comprises: and correcting the shape of the diamond coating to form a grinding groove.
Optionally, the transition metal layer is a strong carbide metal.
Optionally, the transition metal layer employs at least one of Mo and W.
Optionally, the forming a transition metal layer in the groove includes:
and forming a metal Mo or W layer in the groove by utilizing a magnetron sputtering process.
Optionally, in the magnetron sputtering process, the target material is a Mo plate with a purity of 99.999%, the deposition temperature is 600-900 ℃, the deposition pressure is 0.5-2Pa, the protective gas is argon, and the deposition thickness is 0.5-1.5 μm.
Optionally, forming the diamond coating comprises:
and depositing a diamond coating on the metal Mo or W layer by a hot wire plasma chemical vapor deposition (HFCVD) process.
Alternatively, in the hot wire plasma chemical vapor deposition process, CH is adopted as the plasma reaction gas4And H2，CH4And H2The proportion of the silicon dioxide is 4-8%, the deposition temperature is 800-1100 ℃, and the pressure of the chamber is 4-8 Kpa.
The embodiment of the invention also provides a chamfer grinding wheel which is manufactured by adopting the preparation method.
The embodiment of the invention also provides wafer processing equipment which comprises the chamfer angle grinding wheel.
The embodiment of the invention has the following beneficial effects:
in the scheme, a transition metal layer is formed in the groove of the chamfer grinding wheel matrix, and then a diamond coating is formed on the transition metal layer by using a chemical vapor deposition method. By selecting a strong carbide metal element as a transition layer, nucleation growth of the diamond is effectively improved, and oxidation of the diamond at high temperature can be reduced due to the existence of the metal layer; the chemical vapor deposition method has high reaction temperature, and can form an element diffusion region among the grinding wheel body, the transition metal layer and the diamond coating, thereby effectively improving the bonding strength of diamond and the chamfering grinding wheel, improving the grinding or polishing processing quality of the edge of the silicon wafer, reducing the aggregation and particle shedding of harmful impurities at the edge of the silicon wafer, reducing the internal stress of the silicon wafer, and providing a foundation for the quality extension of the wafer; by changing the process conditions of the chemical vapor deposition method, diamond coatings with different thicknesses and different grain sizes can be prepared, and different requirements of processes such as grinding, polishing and the like can be effectively met; the existence of the transition metal layer can also improve the wear resistance of the diamond coating and prolong the service life of the chamfer angle grinding wheel; in addition, when the diamond coating is prepared, the grooves are not filled with diamonds, but only the diamond coating is formed, so that the grinding grooves can be formed only by finely adjusting the diamond coating in the following process, and the shapes of the grinding grooves are easy to form.
Drawings
FIG. 1 is a schematic view of a conventional chamfer grinding wheel manufacturing process;
FIG. 2 is a schematic flow chart of a method of manufacturing a chamfer grinding wheel according to an embodiment of the present invention;
FIG. 3 is a schematic view of a process for manufacturing a chamfer grinding wheel according to an embodiment of the present invention;
fig. 4 is an enlarged schematic view of a dotted frame portion in fig. 3.
Reference numerals
1 chamfer grinding wheel matrix
2 grinding groove
3 Diamond particles
4 dressing grinding wheel
5 transition metal layer
6 Diamond coating
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description will be given with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic view of a manufacturing process of a conventional chamfer grinding wheel, and as shown in fig. 1, a manufacturing method of the conventional chamfer grinding wheel includes: step a, manufacturing a chamfer angle grinding wheel matrix 1; b, opening a grinding groove 2 on the side edge of the chamfer grinding wheel according to the use shape requirement; step c, filling a certain proportion of diamond particles 3 in the grinding groove 2 through an adhesive, and combining the diamond particles with the chamfer angle grinding wheel matrix 1 through high-temperature sintering; and d, grinding off the redundant diamond particles 3 by using a dressing grinding wheel 4 with a certain shape to form the grinding groove 2 with a required shape.
However, because diamond has high interfacial energy and chemical inertness, the bonding performance of the diamond coating of the existing chamfer grinding wheel and the chamfer grinding wheel matrix 1 is poor, and under the action of huge mechanical shearing force brought by high-speed rotation, diamond particles are easy to peel off and fall off, and the surface of a wafer is scratched, so that huge defects are caused.
In order to solve the above problems, embodiments of the present invention provide a chamfering grinding wheel, a manufacturing method thereof, and a wafer processing apparatus, which can effectively improve the bonding strength between a diamond and the chamfering grinding wheel, and further improve the grinding or polishing quality of a silicon wafer edge.
An embodiment of the present invention provides a method for manufacturing a chamfer grinding wheel, as shown in fig. 2, including:
step 101: providing a chamfer grinding wheel matrix, wherein the peripheral surface of the chamfer grinding wheel matrix is provided with at least two grooves arranged along the peripheral direction of the chamfer grinding wheel matrix;
step 102: forming a transition metal layer in the groove;
step 103: and forming a diamond coating on the transition metal layer by using a chemical vapor deposition method.
Specifically, when coarse grinding is required, the diamond coating with larger crystal grain size can be prepared by changing the process conditions of the chemical vapor deposition method, and when fine grinding is required, the diamond coating with smaller crystal grain size can be prepared by changing the process conditions of the chemical vapor deposition method.
Optionally, after forming the diamond coating, the method further comprises:
and correcting the shape of the diamond coating to form a grinding groove. Specifically, the excess diamond coating may be ground away using a shaped dressing wheel to form the desired shaped grinding grooves.
Optionally, the transition metal layer is made of strong carbide metal, a carbide layer is easily formed on the surface of the strong carbide metal, and diamond is easily nucleated on the carbide layer. Of course, the transition metal layer is not limited to the use of strong carbide metals, and other types of metals may be used. Specifically, the transition metal layer may adopt at least one of Mo and W, and specifically, forming a transition metal layer in the groove includes: and forming a metal Mo or W layer in the groove by utilizing a magnetron sputtering process.
Optionally, in the magnetron sputtering process, the target material is a Mo plate with a purity of 99.999%, the deposition temperature is 600-900 ℃, the deposition pressure is 0.5-2Pa, the protective gas is argon, and the deposition thickness is 0.5-1.5 μm.
Optionally, forming the diamond coating comprises:
a diamond coating is deposited on the metal Mo or W layer by utilizing a hot wire plasma chemical vapor deposition (HFCVD) process, and the thickness of the diamond coating can be controlled by controlling process condition parameters, so that the thickness of the diamond coating is the required thickness.
Alternatively, in the hot wire plasma chemical vapor deposition process, CH is adopted as the plasma reaction gas4And H2，CH4And H2The proportion of the silicon dioxide is 4-8%, the deposition temperature is 800-1100 ℃, and the pressure of the chamber is 4-8 Kpa.
The first embodiment is as follows:
by using metal Mo as a transition metal layer, as shown in FIG. 3, the preparation process of the chamfer grinding wheel comprises the following steps:
step a, manufacturing a chamfer angle grinding wheel matrix 1;
b, opening a grinding groove 2 on the side edge of the chamfer grinding wheel according to the use shape requirement;
c, preparing a metal molybdenum layer serving as a transition metal layer 5 in the grinding groove 2 by using a magnetron sputtering method, specifically, using a Mo plate with the purity of 99.999% as a sputtering target material, using argon as a protective gas, and performing deposition at 800 ℃, the pressure of a chamber at 0.8Pa and the deposition time at 60 min;
step d. depositing a diamond coating 6 on the transition metal layer 5 using hot wire plasma chemical vapour deposition (HFCVD), in particular CH4And H2As a plasma reaction gas, CH4And H2In a proportion of 4%, CH4And H2The flow rates are respectively 16sccm and 400sccm, the deposition temperature is 850 ℃, the chamber pressure is 5Kpa, and the deposition time is 20 h;
and e, grinding off the redundant diamond coating 6 by using a dressing grinding wheel 4 with a certain shape to form the grinding groove 2 with a required shape.
The embodiment of the invention also provides a chamfer grinding wheel which is manufactured by adopting the preparation method.
The chamfering grinding wheel according to the present embodiment is shown in fig. 3 and 4, wherein fig. 4 is an enlarged schematic view of a dotted frame portion in fig. 3, at least two grinding grooves 2 are provided on an outer peripheral surface of a chamfering grinding wheel base 1 along a circumferential direction of the chamfering grinding wheel base 1, and a transition metal layer 5 and a diamond coating 6 are provided in the grinding grooves 2.
The embodiment of the invention also provides wafer processing equipment which comprises the chamfer angle grinding wheel.
In this embodiment, a transition metal layer is formed in the groove of the chamfer grinding wheel base of the chamfer grinding wheel, and then a diamond coating is formed on the transition metal layer by chemical vapor deposition. By selecting a strong carbide metal element as a transition metal layer, nucleation growth of the diamond is effectively improved, and oxidation of the diamond at high temperature can be reduced due to the transition metal layer; the chemical vapor deposition method has high reaction temperature, and can form an element diffusion region among the grinding wheel body, the transition metal layer and the diamond coating, thereby effectively improving the bonding strength of diamond and the chamfering grinding wheel, improving the grinding or polishing processing quality of the edge of the silicon wafer, reducing the aggregation and particle shedding of harmful impurities at the edge of the silicon wafer, reducing the internal stress of the silicon wafer, and providing a foundation for the quality extension of the wafer; moreover, by changing the process conditions of the chemical vapor deposition method, diamond coatings with different thicknesses and different grain sizes can be prepared, and different requirements of the processes such as grinding, polishing and the like can be effectively met; the existence of the transition metal layer can also improve the wear resistance of the diamond coating and prolong the service life of the chamfer angle grinding wheel; in addition, when the diamond coating is prepared, the grooves are not filled with diamonds, but only the diamond coating is formed, the thick bottom of the diamonds is small, so that the grinding grooves can be formed only by finely adjusting the diamond coating in the follow-up process, and the shapes of the grinding grooves are easy to form.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (8)
1. A method for preparing a chamfer grinding wheel is characterized by comprising the following steps:
providing a chamfer grinding wheel matrix, wherein the peripheral surface of the chamfer grinding wheel matrix is provided with at least two grooves arranged along the peripheral direction of the chamfer grinding wheel matrix;
forming a transition metal layer in the groove;
and forming a diamond coating on the transition metal layer by using a chemical vapor deposition method.
2. The method of making a chamfer grinding wheel according to claim 1, wherein after forming the diamond coating, the method further comprises:
and correcting the shape of the diamond coating to form a grinding groove.
3. The method of making a chamfer grinding wheel according to claim 1, wherein the transition metal layer is a strong carbide metal element.
4. The method of making a chamfered grinding wheel of claim 3, wherein the transition metal layer is at least one of Mo and W.
5. The method of making a chamfered grinding wheel of claim 4, wherein forming a transition metal layer in the groove comprises:
and forming a metal Mo or W layer in the groove by utilizing a magnetron sputtering process.
6. The method of making a chamfer grinding wheel according to claim 5, wherein forming the diamond coating comprises:
a diamond coating is deposited on the metallic Mo or W layer using a hot wire plasma chemical vapor deposition (HFCVD) process.
7. A chamfered grinding wheel produced by the method according to any one of claims 1 to 6.
8. A wafer processing apparatus comprising the chamfer grinding wheel of claim 7.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911017145.1A CN110757287A (en) | 2019-10-24 | 2019-10-24 | Chamfer grinding wheel, preparation method thereof and wafer processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911017145.1A CN110757287A (en) | 2019-10-24 | 2019-10-24 | Chamfer grinding wheel, preparation method thereof and wafer processing equipment |
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| CN110757287A true CN110757287A (en) | 2020-02-07 |
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| CN201911017145.1A Pending CN110757287A (en) | 2019-10-24 | 2019-10-24 | Chamfer grinding wheel, preparation method thereof and wafer processing equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111390780A (en) * | 2020-03-26 | 2020-07-10 | 西安奕斯伟硅片技术有限公司 | Chamfer grinding wheel, preparation method thereof and wafer processing equipment |
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| CN104290043A (en) * | 2014-09-19 | 2015-01-21 | 宁波大华砂轮有限公司 | Track grinding wheel and preparation method thereof |
| CN105200392A (en) * | 2015-10-19 | 2015-12-30 | 太原理工大学 | Method for preparing diamond coating on cemented carbides surface |
| CN105506574A (en) * | 2015-12-24 | 2016-04-20 | 富耐克超硬材料股份有限公司 | Preparation method of nano-diamond coating and nano-diamond blade |
| CN109333385A (en) * | 2018-11-15 | 2019-02-15 | 哈尔滨工业大学 | A kind of skive and preparation method thereof with micro-structure |
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2019
- 2019-10-24 CN CN201911017145.1A patent/CN110757287A/en active Pending
Patent Citations (5)
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| CN203726355U (en) * | 2014-03-26 | 2014-07-23 | 山东天岳晶体材料有限公司 | Grinding wheel for chamfering edge of large-diameter silicon carbide wafer |
| CN104290043A (en) * | 2014-09-19 | 2015-01-21 | 宁波大华砂轮有限公司 | Track grinding wheel and preparation method thereof |
| CN105200392A (en) * | 2015-10-19 | 2015-12-30 | 太原理工大学 | Method for preparing diamond coating on cemented carbides surface |
| CN105506574A (en) * | 2015-12-24 | 2016-04-20 | 富耐克超硬材料股份有限公司 | Preparation method of nano-diamond coating and nano-diamond blade |
| CN109333385A (en) * | 2018-11-15 | 2019-02-15 | 哈尔滨工业大学 | A kind of skive and preparation method thereof with micro-structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111390780A (en) * | 2020-03-26 | 2020-07-10 | 西安奕斯伟硅片技术有限公司 | Chamfer grinding wheel, preparation method thereof and wafer processing equipment |
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Effective date of registration: 20211021 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Application publication date: 20200207 |