CN110752321A - Preparation method of packaging film and organic electronic device - Google Patents

Preparation method of packaging film and organic electronic device Download PDF

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Publication number
CN110752321A
CN110752321A CN201810812195.8A CN201810812195A CN110752321A CN 110752321 A CN110752321 A CN 110752321A CN 201810812195 A CN201810812195 A CN 201810812195A CN 110752321 A CN110752321 A CN 110752321A
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film layer
thin film
inorganic oxide
precursor
growing
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刘键
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations

Abstract

The invention relates to the technical field of organic electronic thin film packaging, in particular to a packaging thin film preparation method and an organic electronic device, wherein the packaging thin film preparation method comprises the steps of growing an inorganic oxide thin film layer on the surface of a packaged device, then growing a repair thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method, filling pinhole defect positions of the inorganic oxide thin film layer through the repair thin film layer based on conformal growth of the atomic layer deposition method, and simultaneously, the repair thin film layer does not need to deposit a thicker layer, so that the deposition efficiency is improved, and the performance of the packaged device is improved.

Description

Preparation method of packaging film and organic electronic device
Technical Field
The invention relates to the technical field of organic electronic film packaging, in particular to a packaging film preparation method and an organic electronic device.
Background
Organic electronic devices (OLEDs, OPVs and printed electronics) usually contain active metal electrodes, and some functional materials of the devices are sensitive to water or oxygen molecules, particularly because when the devices are operated, electrochemical reactions occur, and aging of the devices is accelerated under the action of water or oxygen molecules, thereby reducing the service life of the devices.
Therefore, the existing device is packaged by using an inorganic oxide film, the main function of the inorganic oxide film is to isolate water or oxygen molecules in the environment, and therefore the compactness of the film has a very important influence on the packaging performance.
However, the glass transition temperature of the organic functional layer material of most of the existing organic electronic devices (such as OLED and OPV) is within 150 ℃, the suitable temperature of the growth region of the encapsulation film is not more than 120 ℃ so as to avoid the damage of the organic functional layer by high-temperature encapsulation and finally influence the device performance, and since the temperature is not high, the inorganic oxide film grown by adopting PECVD or PVD and other methods at a low temperature has pinhole defects, the compactness of the film is not good, and thus the device performance is influenced. Therefore, elimination of pinhole defects is a problem that is currently urgently to be solved.
Disclosure of Invention
In view of the above problems, the present invention has been made in order to provide a method for preparing an encapsulation film and an organic electronic device that overcome the above problems or at least partially solve the above problems.
The embodiment of the invention provides a preparation method of a packaging film, which comprises the following steps:
growing an inorganic oxide film layer on the surface of the packaged device;
and generating a repair thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method, and filling the pinhole part of the inorganic oxide thin film layer through the repair thin film layer based on conformal growth of the atomic layer deposition method.
Preferably, an inorganic oxide thin film layer is grown on the surface of the encapsulated device, specifically:
and growing an inorganic oxide film layer on the surface of the packaged device by adopting PECVD or PVD.
Preferably, the growing of the inorganic oxide thin film layer on the surface of the encapsulated device specifically includes:
applying HMDSO and O on the surface of the packaged device2For the first precursor, O is controlled2The proportion of the input gas flow of the HMDSO to the input gas flow of the HMDSO, the first radio-frequency power of the plasma and the first growth temperature enable first precursor molecules to be cracked under the action of the plasma;
the cracked components react chemically on the surface of the packaged device and are mutually connected to form SiOxA thin film layer.
Preferably, the growing of the inorganic oxide thin film layer on the surface of the encapsulated device specifically includes:
HMDSO and O are adopted on the surface of the packaged device2And N2For the second precursor, control O2Input gas flow ratio to HMDSO and N2The ratio of the input gas flow rate of the second precursor to the input gas flow rate of the HMDSO, the second radio-frequency power of the plasma and the second growth temperature enable second precursor molecules to be cracked under the action of the plasma;
the cracked components chemically react on the surface of the packaged device and are mutually connected to form SiNxOyA thin film layer.
Preferably, the growing and repairing thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method specifically comprises the following steps:
using TMA and H on the inorganic oxide thin film layer2O is a third precursor, TMA pulse input time and purging time are controlled, H2The pulse input time, the purging time and the first reaction temperature of O enable the third precursor to generate chemical adsorption reaction and deposit to form Al2O3A thin film layer;
repeating the above steps to form multiple layers of Al2O3A thin film layer.
Preferably, the growing and repairing thin film layer on the oxide thin film layer by adopting an atomic layer deposition method specifically comprises the following steps:
using TMA and O on the inorganic oxide thin film layer2TMA pulse input time and purge time, O, were controlled for the fourth precursor2The pulse input time, the purging time and the second reaction temperature of the fourth precursor enable the fourth precursor to generate chemical adsorption reaction and deposit to form Al2O3A thin film layer;
repeating the above steps to form multiple layers of Al2O3A thin film layer.
Preferably, the first growth temperature and the second growth temperature range from 0 ℃ to 120 ℃.
Preferably, the first reaction temperature is in the range of 0-200 ℃.
Preferably, the second reaction temperature is in the range of 0-200 ℃.
The embodiment of the invention also provides an organic electronic device, which comprises an organic electronic device chip and an encapsulation thin film layer formed on the surface of the organic electronic device chip;
the packaging film layer is specifically the film layer prepared by the packaging film preparation method.
One or more technical solutions in the embodiments of the present invention have at least the following technical effects or advantages:
according to the preparation method of the packaging film, the inorganic oxide film layer grows on the surface of a packaged device, then the repairing film layer grows on the inorganic oxide film layer by adopting an atomic layer deposition method, the pinhole defect on the inorganic oxide film layer can be repaired by the repairing film layer, the repairing film layer on the inorganic oxide film layer can only fill the pinhole part, a thicker repairing film layer does not need to be deposited on the part without the pinhole, the technical problem of low deposition efficiency caused by the fact that a thicker film layer needs to be deposited when the repairing film layer is independently deposited is solved, the film preparation efficiency is further improved, the two film layer preparation methods are combined, the mutual defects are complemented, the pinhole defect of the film is reduced, the preparation efficiency is improved, and the packaging performance is finally improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic diagram illustrating a method for manufacturing an encapsulation film according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating steps of a method for manufacturing an encapsulation film in an embodiment of the present invention;
fig. 3 shows a schematic structural view of an organic electronic device in an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Referring to fig. 1, the method for preparing the encapsulation film according to the present invention comprises growing an inorganic oxide thin film on a deposited substrate at a low temperature, wherein the inorganic oxide thin film has a plurality of pinhole defects, and growing one or more repair thin film layers (such as Al thin film) on the pinhole defect region of the inorganic oxide thin film having pinhole defects by Atomic Layer Deposition (ALD) to repair the pinhole defects2O3Thin film layer) is formed by filling the pinhole of the inorganic oxide thin film layer with a repair thin film layer based on conformal growth by the atomic layer deposition method. Due to the conformal growth characteristic of the one or more layers of inorganic thin film layer materials, pinhole defects in an inorganic oxide thin film layer grown at a low temperature by adopting a PEVCD or PVD method can be filled and repaired, and the one or more layers of inorganic thin film layer materials have conformality.
A first embodiment of the present invention provides a method for preparing an encapsulation film, as shown in fig. 2, including S101 growing an inorganic oxide film layer on a surface of an encapsulated device, where the inorganic oxide film layer has pinholes; s102, growing a repairing thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method, and filling the pinhole part of the inorganic oxide thin film layer by the repairing thin film layer based on conformal growth of the atomic layer deposition method.
In specific embodiments, S101 may employ PECVD (plasma enhanced chemical vapor deposition) or PVD (physical vapor deposition).
The PEVCD ionizes molecules of a desired gas source by using a strong electric field or a magnetic field to generate plasma, the plasma contains many highly active chemical groups, and the groups form a solid film on the surface of a sample through a series of chemical and plasma reactions.
PVD refers to a process in which a physical process transfers substances, such as atoms or molecules, from a source onto a substrate surface, and serves to spray some particles with special properties (high strength, wear resistance, heat dissipation, corrosion resistance, etc.) onto a matrix with lower properties, so that the matrix has better properties.
The basic method of PVD: vacuum evaporation, sputtering and ion plating. The ion plating can be hollow cathode ion plating, hot cathode ion plating, arc ion plating, active reactive ion plating, radio frequency ion plating, direct current discharge ion plating, etc.
In S101, one embodiment: the method of PEVCD can be adopted, with HMDSO (hexamethyldisiloxane) and O2Reacting for a first precursor to form SiOxA thin film layer (inorganic oxide thin film layer).
In particular, with HMDSO and O2Is a first precursor by controlling a first growth temperature, O2The ratio of the input gas flow rate of the first precursor to the input gas flow rate of the HMDSO and the first radio frequency power of the plasma are used for cracking the first precursor molecules under the action of the high-concentration plasma; the cracked components react chemically on the surface of the packaged device and are cross-linked to form SiOxA thin film layer.
Wherein the first growth temperature is controlled within a range of 0-300 ℃, and specifically, the first growth temperature can be set to 60 ℃, or 100 ℃, or 150 ℃, or 200 ℃. Particularly, when the first growth temperature is low at 0-12 ℃, the organic functional layer can be prevented from being damaged by high-temperature packaging, so that the performance of the device is not influenced. Control of O2The ratio of input gas flow to HMDSO may be greater than or equal to 10, e.g., may be 12, may be 16, or may be 20. The first rf power of the plasma may specifically be 200W, or 500W, or 1000W, or 2000W.
In S101, another embodiment: using PEVCD method with HMDSO, N2And O2Reaction to form SiN for the second precursorxOyA thin film layer.
In particular, HMDSO and O are adopted2And N2For the second precursor, by controlling the second growth temperature, O2Input gas flow ratio to HMDSO, N2The flow ratio of the input gas to the HMDSO and the second radio frequency power of the plasma, so that the second precursor molecules are cracked under the action of the high-concentration plasma, and the cracked components are subjected to chemical reaction on the surface of the packaged device and are mutually connected to form SiNxOyA thin film layer.
Wherein, the second growth temperature is controlled within the range of 0-300 ℃, and can be set to 60 ℃, or 100 ℃, or 150 ℃, or 200 ℃. Particularly, when the first growth temperature is low at 0-12 ℃, the organic functional layer can be prevented from being damaged by high-temperature packaging, so that the performance of the device is not influenced. O is2The ratio of the input gas flow to the HMDSO can be controlled to be greater than or equal to 10, e.g., 12, 16, or 20; n is a radical of2The ratio of the input gas flow to the HMDSO can be controlled to be greater than or equal to 5, such as 10, or 15, or 12, or 18. The first rf power of the plasma may specifically be 200W, or 500W, or 1000W, or 2000W.
In S102, a repair thin film layer is grown on the inorganic oxide thin film layer by an Atomic Layer Deposition (ALD) method, and based on conformal growth by the ALD method, a pinhole portion of the inorganic oxide thin film layer is filled up by the repair thin film layer.
Among them, the atomic layer deposition method is a method of plating a substrate surface with a substance formed into an atomic film layer by layer, and atomic layer deposition has a similarity to ordinary chemical deposition, but in the atomic layer deposition process, a chemical reaction of a new atomic film is directly associated with a previous atomic film in such a manner that only one layer of atoms is deposited per reaction.
In the first embodiment, TMA (trimethylaluminum) and H are used on the inorganic oxide thin film layer2O is a third precursor, TMA pulse input time and purging time are controlled, H2The pulse input time and the purging time of the O and the first reaction temperature enable the third precursor to carry out chemical reaction to form Al2O3And (4) growing a single layer. Then, the above steps are repeated to form Al2O3And (4) growing multiple layers.
In which a pulse of TMA is first applied and the SiO formed in the first stepxThin film layer/SiNxOyThe hydrocarbon group reaction after the adsorption occurs on the thin film layer, and then residual TMA and methane generated by TMA are removed by vacuum; followed by a pulse of water vapor to cause H2O (water vapor) and SiOxThin film layer/SiNxOyThe methyl group (methyl is one of hydrocarbon group) adsorbed on the surface of the film layer reacts to form Al-O bridge bond, SiOxThin film layer/SiNxOyPassivating the hydrocarbon group on the surface of the thin film layer to form methane, and then vacuumizing to remove excessive water vapor and methane again to generate Al2O3A thin film layer. In the process, the sequential input time and the purge time of the two substances in the third precursor and the experimental conditions of the chamber temperature are alternately controlled to form a multilayer Al2O3A thin film layer.
Wherein, specifically, the input time of the TMA pulse can be controlled at 0.01s, or 0.015s, or 0.02s, or 0.025s, and the purge time of the TMA pulse can be controlled at 30s, or 40s, or 50s, or 60 s; h2The input time of the O pulse can be controlled at 0.01s, or 0.015s, or 0.02s, or 0.025s, H2The purge time of the O-pulse may be controlled at 30s, or 40s, or 50s, or 60 s. The first reaction temperature of the reaction chamber is in the range of 0-200 ℃, and the specific temperature can be controlled at 60 ℃, or 80 ℃, or 120 ℃, or 150 ℃.
Formation of Al as described above2O3Multi-layer conformal growth of thin film layers until effective overcoming of SiO formed in the first stepxThin film layer/SiNxOyThe pinhole defect of the thin film layer is effectively filled and repaired. And alsoIn the second step, the atomic layer deposition method is adopted, and a thicker film layer is not required to be deposited, but only the SiO formed in the first step is required to be depositedxThin film layer/SiNxOyThe pinhole part of the thin film layer is filled, so that the deposition efficiency of the second step is improved.
In the second embodiment, TMA and O are used for the inorganic oxide thin film layer2TMA pulse input time and purge time, O, were controlled for the fourth precursor2The pulse input time, the purging time and the second reaction temperature of the fourth precursor enable the fourth precursor to generate chemical adsorption reaction and deposit to form Al2O3Growing a single layer; then, this step is repeated to form Al2O3And (4) growing multiple layers.
Wherein, TMA pulse is firstly introduced into SiOxThin film layer/SiNxOyThe hydrocarbon group reaction after the adsorption occurs on the thin film layer, and then residual TMA and methane generated by TMA are removed by vacuum; then introducing O2So that O is2With SiOxThin film layer/SiNxOyThe methyl group (methyl is one of hydrocarbon group) adsorbed on the surface of the film layer reacts to form Al-O bridge bond, SiOxThin film layer/SiNxOyThe hydrocarbon group on the surface of the film layer is passivated to form methane, and then the redundant O is pumped out again through vacuum2And methane to produce Al2O3A thin film layer. In the process, Al is formed by alternately controlling the sequential input time and the purge time of the two substances in the fourth precursor and the experimental conditions of the chamber temperature2O3And (3) a layer.
Specifically, the TMA pulse input time may be controlled at 0.01s, or 0.015s, or 0.02s, or 0.025s, and the purge time of TMA may be controlled at 30s, or 40s, or 50s, or 60 s; o is2The input time of the pulse can be controlled at 0.01s, or 0.015s, or 0.02s, or 0.025s, O2The purge time of the pulse may be controlled at 30s, or 40s, or 50s, or 60 s. The second reaction temperature range of the reaction chamber is 0-200 ℃, and the specific temperature can be controlled at 60 ℃, or 80 ℃, or 120 ℃, or150 ℃ is used.
Formation of Al as described above2O3Multi-layer conformal growth of thin film layers until effective overcoming of SiO formed in the first stepxThin film layer/SiNxOyThe pinhole defect of the thin film layer is effectively filled and repaired. Furthermore, the atomic layer deposition method adopted in the second step does not need to deposit a thicker film layer, but only needs to deposit the SiO formed in the first stepxThin film layer/SiNxOyThe pinhole part of the thin film layer is filled, so that the deposition efficiency of the second step is improved.
Of course, except that the atomic layer deposition method is used to grow Al2O3Besides the layer, the ZnO layer or TiO layer can be grown by adopting an atomic layer deposition method2The layer is not described in detail in the embodiments of the present invention.
Based on the same inventive concept, a second embodiment of the present invention provides an organic electronic device, as shown in fig. 3, including an organic electronic device chip 301 and an encapsulation thin film layer formed on a surface of the organic electronic device chip;
the packaging film layer is specifically the film layer prepared by the packaging film preparation method.
The thin film layer includes an inorganic oxide thin film layer 3021 and a repair thin film layer 3022 from bottom to top.
Because the encapsulation thin film layer prepared by adopting the preparation method of the encapsulation thin film in the organic electronic device grows the inorganic oxide thin film layer on the surface of the encapsulated device by adopting a PECVD or PVD method, then grows the repair thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method, the repair thin film layer can repair the pinhole defect on the inorganic oxide thin film layer, and the repair thin film layer on the inorganic oxide thin film layer can only fill the pinhole part, and does not need to deposit a thicker repair thin film layer on the part without the pinhole, thereby overcoming the technical problem of low deposition efficiency caused by the need of depositing the thicker thin film layer when independently depositing the repair thin film layer, further improving the efficiency of thin film preparation, combining the preparation methods of the two thin film layers, complementing the mutual defects, reducing the pinhole defect of the thin film and improving the preparation efficiency, finally, the packaging performance of the device is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A method for preparing an encapsulation film, the method comprising:
growing an inorganic oxide film layer on the surface of the packaged device;
and growing a repairing thin film layer on the inorganic oxide thin film layer by adopting an atomic layer deposition method, and filling the pinhole part of the inorganic oxide thin film layer through the repairing thin film layer based on conformal growth of the atomic layer deposition method.
2. The method of claim 1, wherein the inorganic oxide thin film layer is grown on the surface of the encapsulated device, and specifically comprises:
and growing an inorganic oxide film layer on the surface of the packaged device by adopting PECVD or PVD.
3. The method of claim 1, wherein growing the inorganic oxide thin film layer on the surface of the encapsulated device comprises:
applying HMDSO and O on the surface of the packaged device2For the first precursor, O is controlled2The ratio of the input gas flow rate of the HMDSO, the first radio frequency power of the plasma and the first growth temperature to the first precursorThe daughter is cracked under the action of the plasma;
the cracked components react chemically on the surface of the packaged device and are mutually connected to form SiOxA thin film layer.
4. The method of claim 1, wherein growing the inorganic oxide thin film layer on the surface of the encapsulated device comprises:
HMDSO and O are adopted on the surface of the packaged device2And N2For the second precursor, control O2Input gas flow ratio to HMDSO and N2The ratio of the input gas flow rate of the second precursor to the input gas flow rate of the HMDSO, the second radio-frequency power of the plasma and the second growth temperature enable second precursor molecules to be cracked under the action of the plasma;
the cracked components chemically react on the surface of the packaged device and are mutually connected to form SiNxOyA thin film layer.
5. The method of claim 3 or 4, wherein growing a repair film layer on the inorganic oxide film layer by atomic layer deposition, specifically comprises:
using TMA and H on the inorganic oxide thin film layer2O is a third precursor, TMA pulse input time and purging time are controlled, H2The pulse input time, the purging time and the first reaction temperature of O enable the third precursor to generate chemical adsorption reaction and deposit to form Al2O3A thin film layer;
repeating the above steps to form multiple layers of Al2O3A thin film layer.
6. The method of claim 3 or 4, wherein growing a repair film layer on the inorganic oxide film layer by atomic layer deposition, specifically comprises:
using TMA and O on the inorganic oxide thin film layer2TMA pulse input time and purge time, O, were controlled for the fourth precursor2The pulse input time, the purging time and the second reaction temperature of the fourth precursor enable the fourth precursor to generate chemical adsorption reaction and deposit to form Al2O3A thin film layer;
repeating the above steps to form multiple layers of Al2O3A thin film layer.
7. The method for preparing an encapsulation film according to claim 3 or 4, wherein the first growth temperature and the second growth temperature range from 0 to 120 ℃.
8. The method of claim 5, wherein the first reaction temperature is in a range of 0 to 200 ℃.
9. The method of claim 6, wherein the second reaction temperature is in a range of 0 to 200 ℃.
10. An organic electronic device is characterized by comprising an organic electronic device chip and an encapsulation thin film layer formed on the surface of the organic electronic device chip;
the packaging film layer is specifically a film layer prepared by the packaging film preparation method of any one of claims 1 to 8.
CN201810812195.8A 2018-07-23 2018-07-23 Preparation method of packaging film and organic electronic device Pending CN110752321A (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068904A (en) * 2017-04-18 2017-08-18 京东方科技集团股份有限公司 Inorganic encapsulated film, the preparation method of OLED packaging films and related device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068904A (en) * 2017-04-18 2017-08-18 京东方科技集团股份有限公司 Inorganic encapsulated film, the preparation method of OLED packaging films and related device

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