CN110752283A - Broadband near-infrared LED device - Google Patents
Broadband near-infrared LED device Download PDFInfo
- Publication number
- CN110752283A CN110752283A CN201910968952.5A CN201910968952A CN110752283A CN 110752283 A CN110752283 A CN 110752283A CN 201910968952 A CN201910968952 A CN 201910968952A CN 110752283 A CN110752283 A CN 110752283A
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- bismuth
- led chip
- doped glass
- infrared
- led device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Abstract
The invention discloses a broadband near-infrared LED device, which comprises bismuth-doped glass, an LED chip and a light-gathering cover, wherein the bismuth-doped glass and the light-gathering cover form a sealed cavity; the light-gathering cover is used for gathering light, and the LED chip is an LED chip with a near ultraviolet to blue light waveband. The LED device can provide ultra-wideband spectrum covering the near infrared band of 1000 nm to 1700 nm. The device has the advantages of low energy consumption, small volume, long service life, high response speed, high reliability and the like. The provided LED device has simple structure and low cost, is convenient for large-scale production, and has great potential in the fields of biomedical imaging, tumor tissue diagnosis, health real-time monitoring, food component analysis and the like.
Description
Technical Field
The invention relates to a near-infrared light source, in particular to a broadband near-infrared LED device.
Background
Near infrared is an electromagnetic wave between the visible and mid-infrared. It has the characteristics of no damage and deep penetration. Therefore, the near infrared rays are widely applied to various fields such as biomedical imaging, tumor tissue diagnosis, real-time health monitoring, food composition analysis, iris recognition and the like. However, the current near-infrared light sources are very limited, and especially, a light source with broadband near-infrared light emitting characteristics is lacked. In the current mainstream near-infrared light source, the tungsten halogen lamp can provide ultra-wideband spectrum covering visible infrared range, but the tungsten halogen lamp has short service life, low efficiency and high heat generation; the supercontinuum solid laser has excellent spectral characteristics covering the range of 400 nm to 2400 nm, but has high energy consumption, relatively high manufacturing cost and inconvenient carrying of occupied space; the near-infrared LED chip has many advantages, including small size, fast response, high efficiency, low power consumption, portability, etc., but its spectral bandwidth is very narrow, usually not more than 50 nm. Therefore, in the production and life of the present society, a new near infrared light source with the characteristics of broadband, stable spectrum, low energy consumption, long service life, portability and the like is urgently needed.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a broadband near-infrared LED device.
The object of the invention is achieved by at least one of the following solutions.
The invention provides a broadband near-infrared LED device, which comprises bismuth-doped glass, an LED chip and a light-gathering cover, wherein the bismuth-doped glass and the light-gathering cover form a sealed cavity; the light-gathering cover is used for gathering light, and the LED chip is an LED chip with a near ultraviolet to blue light waveband; the LED device further comprises a heat dissipation structure connected with the LED chip.
Preferably, the LED device further comprises a heat sink located on the lower surface of the LED chip.
Preferably, the bismuth-doped glass comprises one or more of a silicate bismuth-doped glass, a germanate bismuth-doped glass, a phosphate bismuth-doped glass, a silicate bismuth-doped glass, and a borate bismuth-doped glass.
Preferably, the concentration of bismuth doping in the bismuth-doped glass is 0.5-3 mol%.
Preferably, the concentration of bismuth doping in the bismuth-doped glass is 1 mol%.
Preferably, the concentration of bismuth doping in the bismuth-doped glass is 0.5 mol%.
Preferably, the concentration of bismuth doping in the bismuth-doped glass is 3 mol%.
Preferably, the wavelength of the LED chip used as an excitation light source is 365 nm-460 nm.
Preferably, the LED chip is a 365nm ultraviolet LED chip.
Preferably, the LED chip is an ultraviolet LED chip with the wavelength of 380 nm.
Preferably, the LED chip is an ultraviolet LED chip of 395 nm.
Preferably, the LED chip is a 460nm blue LED chip.
Compared with the prior art, the invention has the following beneficial effects and advantages:
(1) compared with the existing near-infrared LED chip, the LED device provided by the invention can provide an ultra-wideband near-infrared spectrum covering 1000 nm to 1700 nm;
(2) the LED device provided by the invention has the advantages of simple structure and low manufacturing cost, and can be conveniently produced in a large scale;
(3) the LED device provided by the invention has the advantages of small volume, small occupied space and extremely high portability.
Drawings
FIG. 1 is a schematic diagram of a broadband near-infrared LED device provided by an embodiment;
FIG. 2 is an emission spectrum of a broadband near-infrared LED light source in example 1, example 2, example 3 and example 4;
FIG. 3 is an emission spectrum of a broadband near-infrared LED light source in example 5, example 6, example 7 and example 8;
FIG. 4 is an emission spectrum of a broadband near-infrared LED light source in example 9, example 10, example 11 and example 12;
FIG. 5 is an emission spectrum of a broadband near-infrared LED light source in example 13, example 14, example 15 and example 16;
in fig. 1: 1-bismuth doped glass; 2-a light-gathering shade; 3-an LED chip; 4-heat sink.
Detailed Description
The following further describes embodiments of the present invention in conjunction with the following examples and figures, but the practice of the present invention is not limited thereto.
Example 1
The embodiment provides a broadband near-infrared LED device, as shown in FIG. 1, which includes bismuth-doped glass 1, an LED chip 3 and a light-gathering cover 2, wherein the bismuth-doped glass 1 and the light-gathering cover 2 form a sealed cavity, the LED chip 3 is located at the bottom of the cavity, and the bismuth-doped glass 1 is located above the LED chip 3 and opposite to the LED chip 3; the light-gathering cover 2 is used for gathering light, and the LED chip 3 is an LED chip with a near ultraviolet to blue light waveband. The LED device further includes a heat sink 4 on the lower surface of the LED chip 3.
In the embodiment, borate glass with 0.5 mol% bismuth doping concentration is selected as a light conversion medium, and a 365nm ultraviolet LED chip is adopted as an excitation light source.
As shown in fig. 2, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1186 nm and a full width at half maximum of 251 nm, and covers a near-infrared band in a range from 1000 nm to 1700 nm.
Example 2
In the embodiment, borate glass with the bismuth doping concentration of 0.5 mol% is selected as a light conversion medium, and a 380 nm ultraviolet LED chip is adopted as an excitation light source.
As shown in fig. 2, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1180 nm and a full width at half maximum of 238 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
Example 3
In this embodiment, borate glass with a bismuth doping concentration of 0.5 mol% is selected as a light conversion medium, and a 395 nm ultraviolet LED chip is used as an excitation light source.
As shown in FIG. 2, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately located at 1175 nm and a full width at half maximum of 225 nm, and covers a near-infrared band ranging from 1000 nm to 1700 nm.
Example 4
In this embodiment, borate glass with a bismuth doping concentration of 0.5 mol% is selected as a light conversion medium, and a 460nm blue LED chip is used as an excitation light source.
As shown in fig. 2, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately located at 1152 nm, a full width at half maximum of 220 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 5
In the embodiment, germanate glass with the bismuth doping concentration of 3 mol% is selected as a light conversion medium, and a 365nm ultraviolet LED chip is adopted as an excitation light source.
As shown in fig. 3, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1144 nm and a full width at half maximum of 255 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 6
In the embodiment, germanate glass with the bismuth doping concentration of 3 mol% is selected as a light conversion medium, and a 380 nm ultraviolet LED chip is adopted as an excitation light source.
As shown in FIG. 3, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1156 nm and a full width at half maximum of 275 nm, covering a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 7
In the embodiment, germanate glass with the bismuth doping concentration of 3 mol% is selected as a light conversion medium, and a 395 nm ultraviolet LED chip is adopted as an excitation light source.
As shown in FIG. 3, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has a peak at 1170 nm and a full width at half maximum 309 nm, and covers the near-infrared band in the range of 1000 nm to 1700 nm.
EXAMPLE 8
In the embodiment, germanate glass with the bismuth doping concentration of 3 mol% is selected as a light conversion medium, and a 460nm blue light LED chip is adopted as an excitation light source.
As shown in fig. 3, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has emission spectrum peaks approximately 1192 nm and a full width at half maximum 266 nm, and covers a near-infrared band in a range from 1000 nm to 1700 nm.
EXAMPLE 9
In the embodiment, phosphate glass with a bismuth doping concentration of 1 mol% is selected as a light conversion medium, and a 365nm ultraviolet LED chip is adopted as an excitation light source. As shown in fig. 4, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1210 nm and a full width at half maximum of 261 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 10
In the embodiment, phosphate glass with the bismuth doping concentration of 1 mol% is selected as a light conversion medium, and a 380 nm ultraviolet LED chip is adopted as an excitation light source.
As shown in fig. 4, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1203 nm and a full width at half maximum of 245 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 11
In this embodiment, phosphate glass with a bismuth doping concentration of 1 mol% is selected as a light conversion medium, and a 395 nm ultraviolet LED chip is used as an excitation light source.
As shown in fig. 4, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has emission spectrum peaks approximately 1198 nm and a full width at half maximum of 226 nm, and covers a near-infrared band in a range from 1000 nm to 1700 nm.
EXAMPLE 12
In this embodiment, phosphate glass with a bismuth doping concentration of 1 mol% is selected as a light conversion medium, and a 460nm blue LED chip is used as an excitation light source.
As shown in FIG. 4, the emission spectrum of the broadband near-infrared LED light source of the present invention has an emission spectrum peak approximately at 1182 nm and a full width at half maximum of 246 nm, covering the near-infrared band in the range of 1000 nm to 1700 nm.
EXAMPLE 13
In the embodiment, silicate glass with 0.5 mol% of bismuth doping concentration is selected as a light conversion medium, and a 365nm ultraviolet LED chip is adopted as an excitation light source.
As shown in fig. 5, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1272 nm and a full width at half maximum of 321 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 14
In the embodiment, silicate glass with 0.5 mol% of bismuth doping concentration is selected as a light conversion medium, and a 380 nm ultraviolet LED chip is adopted as an excitation light source.
As shown in FIG. 5, the emission spectrum of the broadband near-infrared LED light source of the present invention has an emission spectrum peak approximately in 1254 nm and a full width at half maximum of 308 nm, covering a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 15
In this embodiment, silicate glass with 0.5 mol% bismuth doping concentration is used as a light conversion medium, and a 395 nm ultraviolet LED chip is used as an excitation light source.
As shown in fig. 5, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1240 nm and a full width at half maximum of 285 nm, covering a near-infrared band in a range of 1000 nm to 1700 nm.
EXAMPLE 16
In this embodiment, silicate glass with 0.5 mol% bismuth doping concentration is used as a light conversion medium, and a 460nm blue LED chip is used as an excitation light source.
As shown in FIG. 5, the emission spectrum of the broadband near-infrared LED light source of the present embodiment has an emission spectrum peak approximately at 1210 nm and a full width at half maximum of 267 nm, and covers a near-infrared band in a range of 1000 nm to 1700 nm.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. A broadband near-infrared LED device is characterized by comprising bismuth-doped glass, an LED chip and a light-gathering cover, wherein the bismuth-doped glass and the light-gathering cover form a sealed cavity; the light-gathering cover is used for gathering light, and the LED chip is an LED chip with a near ultraviolet to blue light waveband; the LED device further comprises a heat dissipation structure connected with the LED chip.
2. A broadband near-infrared LED device according to claim 1, wherein the heat dissipation structure is a heat sink located on the lower surface of the LED chip.
3. A broadband near-infrared LED device according to claim 1, wherein the bismuth-doped glass comprises one or more of a bismuth silicate-doped glass, a bismuth germanate-doped glass, a bismuth phosphate-doped glass, a bismuth silicate-doped glass, and a bismuth borate-doped glass.
4. A broadband near-infrared LED device according to claim 1, wherein the concentration of bismuth doping in the bismuth-doped glass is 0.5-3 mol%.
5. A broadband near-infrared LED device according to claim 1, wherein the concentration of bismuth doping in the bismuth doped glass is 1 mol%.
6. A broadband near-infrared LED device according to claim 1, wherein the concentration of bismuth doping in the bismuth doped glass is 0.5 mol%.
7. A broadband near-infrared LED device according to claim 1, wherein the concentration of bismuth doping in the bismuth doped glass is 3 mol%.
8. The broadband near-infrared LED device of claim 1, wherein the wavelength of the LED chip as an excitation light source is 365nm to 460 nm.
9. A broadband near-infrared LED device according to claim 1, wherein the LED chip is a 380 nm ultraviolet LED chip.
10. A broadband near-infrared LED device according to claim 1, wherein the LED chip is a 395 nm ultraviolet LED chip.
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| CN201910968952.5A CN110752283A (en) | 2019-10-12 | 2019-10-12 | Broadband near-infrared LED device |
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| CN201910968952.5A CN110752283A (en) | 2019-10-12 | 2019-10-12 | Broadband near-infrared LED device |
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2019
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Application publication date: 20200204 |