TWM495622U - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
TWM495622U
TWM495622U TW103218086U TW103218086U TWM495622U TW M495622 U TWM495622 U TW M495622U TW 103218086 U TW103218086 U TW 103218086U TW 103218086 U TW103218086 U TW 103218086U TW M495622 U TWM495622 U TW M495622U
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Taiwan
Prior art keywords
light
emitting diode
solution
phosphor powder
diode device
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TW103218086U
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Chinese (zh)
Inventor
Hoang Duy Nguyen
Mu-Huei Fang
Chun-Che Lin
Ru-Shi Liu
Sung-Yu Tsai
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China Glaze Co Ltd
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Priority to TW103218086U priority Critical patent/TWM495622U/en
Priority to CN201420677011.9U priority patent/CN204375791U/en
Publication of TWM495622U publication Critical patent/TWM495622U/en

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Abstract

The disclosure provides a light-emitting diode device including a base; a light-emitting chip disposed in the base; a phosphor encapsulant, which covers the light-emitting chip and contains a phosphor dispersed therein; and a wiring structure electrically connected to the light-emitting chip. The light-emitting diode is featured in that the phosphor is prepared by a method including a step of adding acetone.

Description

發光二極體裝置Light-emitting diode device

本創作係有關於一種發光二極體裝置。This creation is about a light-emitting diode device.

近年來,各國環保意識提升,紛紛投入節約能源之研究,耗電量低且壽命長之發光二極體(light-emitting diodes,LEDs)便是照明領域中相當重要的發展之一。In recent years, countries have increased their awareness of environmental protection and have invested in energy conservation research. Light-emitting diodes (LEDs) with low power consumption and long life are one of the most important developments in the field of lighting.

目前全球LED的發展以白光LED及高亮度LED為主要發展方向,白光LED具有體積小、環保、發熱量及耗電量低等優點,並可製作成大尺寸陣列發光模組,因而成為新世代的照明來源。At present, the development of global LEDs is dominated by white LEDs and high-brightness LEDs. White LEDs have the advantages of small size, environmental protection, heat generation and low power consumption, and can be fabricated into large-size array light-emitting modules, thus becoming a new generation. Source of illumination.

白光LED的發展始自日本日亞化學(Nichia Corporation)以藍光氮化銦鎵發光二極體(InGaN LED)搭配釔鋁石榴石(cerium doped yttrium aluminum garnet;Y3 Al5 O12 :Ce;YAG:Ce)之黃色螢光粉。YAG螢光粉吸收450~470nm波長(藍光光譜範圍)的光之後,可以產生550~560nm波長的光,利用藍光與黃光為互補色光的原理,混光產生高亮度白光。以YAG螢光粉搭配藍光LED晶片仍是目前業界最常用以製造白光LED的方式之一,此方式製造之白光LED具有成本低且電源迴路構造簡單等優點。The development of white LEDs began with Nichia Corporation's blue indium gallium nitride light emitting diode (InGaN LED) with cerium doped yttrium aluminum garnet (Y 3 Al 5 O 12 :Ce; YAG) :Ce) Yellow fluorescent powder. After absorbing the light of 450~470nm wavelength (blue light spectrum range), YAG phosphor powder can generate light with wavelength of 550~560nm, and use the principle of complementary light of blue light and yellow light to produce high brightness white light by mixing light. The use of YAG phosphor powder with blue LED chips is still one of the most commonly used methods in the industry to manufacture white LEDs. The white LEDs manufactured in this way have the advantages of low cost and simple power supply loop structure.

然而,為了彌補YAG螢光粉較欠缺之紅色放光,添 加紅光螢光粉之白光LED製程已成為新課題,近年來,產業界致力於發展半高寬較窄且放光強度高之紅光螢光粉,例如,信越化學(Shim-Etsu Chemical)提出之Na2 SiF6 :Mn4+ 螢光粉,其晶系之空間群屬於P321,放光波長約為630nm。However, in order to make up for the lack of red light in the YAG phosphor powder, the white LED process with red phosphor powder has become a new topic. In recent years, the industry is committed to developing a red with a narrow half-height and a high intensity. The light-emitting phosphor, for example, Na 2 SiF 6 :Mn 4+ fluorescent powder proposed by Shim-Etsu Chemical, has a crystal space group of P321 and a light-emitting wavelength of about 630 nm.

添加紅光螢光粉之白光LED具有較高的亮度及發光 效率,更進一步提升了白光LED之品質與效能,因此,生產具有高產率及高發光效率之紅光螢光粉,為當前LED發展的重要目標之一。White LED with red fluorescent powder has high brightness and illumination The efficiency further enhances the quality and performance of white LEDs. Therefore, the production of red fluorescent powder with high yield and high luminous efficiency is one of the important goals of current LED development.

本創作提供一種發光二極體裝置,包括基座;發光二極體晶片,設置於基座內;螢光膠材,包覆發光二極體晶片,且螢光粉分散於螢光膠材中;以及導線結構,電性連接發光二極體晶片,上述發光二極體裝置的特徵於其中螢光粉之製備方法包括添加丙酮的步驟。The invention provides a light emitting diode device, comprising a base; a light emitting diode chip disposed in the base; a fluorescent glue material covering the light emitting diode chip, and the fluorescent powder being dispersed in the fluorescent glue material And a wire structure electrically connected to the light emitting diode chip, wherein the light emitting diode device is characterized in that the method for preparing the phosphor powder comprises the step of adding acetone.

10‧‧‧發光二極體裝置10‧‧‧Lighting diode device

12‧‧‧基座12‧‧‧ Pedestal

14‧‧‧發光二極體晶片14‧‧‧Light Emitting Diode Wafer

16‧‧‧螢光膠材16‧‧‧Fluorescent glue

18‧‧‧螢光粉18‧‧‧Fluorescent powder

20‧‧‧導線結構20‧‧‧Wire structure

100‧‧‧螢光粉的製備方法100‧‧‧How to prepare fluorescent powder

102~110‧‧‧螢光粉的製備方法之步驟102~110‧‧‧Steps for preparing the phosphor powder

以下將配合所附圖式詳述本創作之實施例,應注意的是,以下圖示並未按照比例繪製,事實上,可能任意的放大或縮小元件的尺寸以便清楚表現出本創作的特徵,而在說明書及圖式中,同樣或類似的元件將以類似的符號表示。The embodiments of the present invention are described in detail below with reference to the accompanying drawings, in which the following illustrations are not drawn to scale. In fact, the dimensions of the elements may be arbitrarily enlarged or reduced so as to clearly represent the features of the present invention. In the description and drawings, the same or similar elements will be denoted by like reference numerals.

第1圖係本創作一實施例之發光二極體裝置之示意圖。Fig. 1 is a schematic view showing a light-emitting diode device according to an embodiment of the present invention.

第2圖係本創作一實施例中,發光二極體裝置中的螢光粉之製備方法之步驟流程圖。Fig. 2 is a flow chart showing the steps of a method for preparing a phosphor powder in a light-emitting diode device according to an embodiment of the present invention.

第3圖係本創作一實施例中,發光二極體裝置中的螢光粉之X光粉末繞射圖譜。Fig. 3 is a diagram showing the X-ray powder diffraction pattern of the phosphor powder in the light-emitting diode device in an embodiment of the present invention.

第4圖係本創作一些實施例中,使用光激光譜儀(Photoluminescence,PL)量測發光二極體裝置中的螢光粉之放光光譜。Fig. 4 is a view showing the light emission spectrum of the phosphor powder in the light-emitting diode device using a photoluminescence spectrometer (PL) in some embodiments.

第5圖係本創作一些實施例中,將YAG黃粉加上實施例中M2 ZF6 :Mn4+ 紅粉與藍光晶片封裝,量測其白光光譜。Figure 5 is a schematic representation of the white light spectrum of YAG yellow powder plus M 2 ZF 6 :Mn 4+ red powder and blue light wafer in the examples.

第6圖係本創作一些實施例中,將第5圖的光譜數據利用Commission Internationale de L’Éclairage(CIE)轉換軟體,以獲得其實際色度座標圖。Figure 6 is a representation of the present embodiment. The spectral data of Figure 5 is converted using the Commission Internationale de L'Éclairage (CIE) software to obtain its actual chromaticity coordinate map.

以下公開許多不同的實施方法或是例子來實行本創作之不同特徵,以下描述具體的元件及其排列的例子以闡述本創作。當然這些僅是例子且不該以此限定本創作的範圍。Many different implementations or examples are disclosed below to implement the various features of the present invention. The specific elements and their permutations are described below to illustrate the present invention. Of course, these are only examples and should not limit the scope of this creation.

本創作提供了一種發光二極體裝置,其特徵在於發光二極體裝置中的螢光粉之製備方法利用了添加丙酮之步驟以增加螢光粉之產率及發光效率,進而提升發光二極體裝置之效能。The present invention provides a light-emitting diode device characterized in that the method for preparing the phosphor powder in the light-emitting diode device utilizes the step of adding acetone to increase the yield and luminous efficiency of the phosphor powder, thereby improving the light-emitting diode. The performance of the body device.

第1圖為本創作一實施例之發光二極體裝置10之示 意圖,其包括:基座12;設置於基座12內之發光二極體晶片14;包覆發光二極體晶片14之螢光膠材16,且螢光粉18分散於上述螢光膠材中;以及電性連接發光二極體晶片14之導線結構20。 在一實施例中,發光二極體裝置10的特徵於其中螢光粉18之製備方法包括一添加丙酮的步驟,藉由丙酮的添加使得製成之螢光粉18具有較佳之產率及發光效率,而發光二極體裝置10的其它元件(例如:基座、發光二極體晶片、螢光膠材等)此技藝人士可選用任何習知之材料及方法製作,例如可參見中華民國專利M407494、歐洲專利EP 1930959A1、美國專利US20080029720A1,為簡化說明起見,在此不予贅述,以下僅詳述螢光粉18之製備方法。1 is a schematic view of a light-emitting diode device 10 according to an embodiment of the present invention. Intended to include: a susceptor 12; a light-emitting diode chip 14 disposed in the susceptor 12; a phosphor paste 16 covering the LED chip 14, and the phosphor powder 18 dispersed in the fluoroplastic material And a wire structure 20 electrically connected to the LED chip 14. In one embodiment, the LED device 10 is characterized in that the method for preparing the phosphor powder 18 includes a step of adding acetone, and the prepared phosphor powder 18 has a better yield and luminescence by the addition of acetone. Efficiency, and other components of the LED device 10 (eg, pedestal, light-emitting diode wafer, fluorescent glue, etc.) can be made by any person skilled in the art using any of the conventional materials and methods, for example, see the Republic of China patent M407494 European Patent No. EP 1 930 959 A1, US Patent No. 20080029720 A1, for the sake of simplicity of explanation, will not be described herein, and only the preparation method of the phosphor powder 18 will be described in detail below.

在一實施例中,螢光粉18具有化學式:M2 ZF6 :Mn4+ , 其中M為擇自鈉(Na)或鉀(K)的鹼金屬元素,Z為擇自矽(Si)或鈦(Ti)的四價元素。第2圖為一實施例中螢光粉18的製備方法100之步驟流程圖。In one embodiment, the phosphor powder 18 has the chemical formula: M 2 ZF 6 :Mn 4+ , wherein M is an alkali metal element selected from sodium (Na) or potassium (K), and Z is selected from bismuth (Si) or A tetravalent element of titanium (Ti). 2 is a flow chart showing the steps of the method 100 for preparing the phosphor powder 18 in an embodiment.

首先,在步驟102中,配製含有四價元素Z的氟化 物以及錳化物的第一溶液。在一實施例中,可將四價元素Z的氧化物、氫氧化物或碳酸鹽,以及錳化物溶於氫氟酸(HF)溶液以配製第一溶液。在一實施例中,四價元素Z的氧化物可為二氧化矽(SiO2 )、二氧化鈦(TiO2 );四價元素Z的氫氧化物可為Si(OH)4 、Ti(OH)4 ;四價元素Z的碳酸鹽可為Si(CO3 )2 、Ti(CO3 )2 ;而錳化物可以是六氟錳二鈉(Na2 MnF6 )或六氟錳二鉀(K2 MnF6 ),但不僅限 於此。First, in step 102, a first solution containing a fluoride of a tetravalent element Z and a manganese compound is prepared. In one embodiment, the oxide, hydroxide or carbonate of the tetravalent element Z, as well as the manganese compound, may be dissolved in a hydrofluoric acid (HF) solution to formulate the first solution. In one embodiment, the oxide of the tetravalent element Z may be cerium oxide (SiO 2 ) or titanium dioxide (TiO 2 ); the hydroxide of the tetravalent element Z may be Si(OH) 4 or Ti(OH) 4 The carbonate of the tetravalent element Z may be Si(CO 3 ) 2 or Ti(CO 3 ) 2 ; and the manganese compound may be disodium hexafluoro manganese (Na 2 MnF 6 ) or hexafluoro manganese dipotassium (K 2 MnF) 6 ), but not limited to this.

在一實施例中,第一溶液中四價元素M的氟化物之 濃度可為0.1至3mol/L,較佳可為0.2至1.0mol/L,錳化物之濃度可為0.01至0.1mol/L,較佳可為0.03至0.06mol/L,而氫氟酸溶液的濃度可為0.1至30mol/L,較佳可為20至30mol/L。In one embodiment, the fluoride of the tetravalent element M in the first solution The concentration may be 0.1 to 3 mol/L, preferably 0.2 to 1.0 mol/L, and the concentration of the manganese compound may be 0.01 to 0.1 mol/L, preferably 0.03 to 0.06 mol/L, and the hydrofluoric acid solution The concentration may be from 0.1 to 30 mol/L, preferably from 20 to 30 mol/L.

接著,於步驟104中,提供含有鹼金屬元素M的化 合物。在一實施例中,可將鹼金屬元素M的化合物溶於氫氟酸溶液以形成第二溶液,第二溶液接著在步驟106中與第一溶液混合以產生反應。在另一實施例中,亦可直接使用固體形式的鹼金屬元素M的化合物。此外,上述鹼金屬元素M的化合物可為硫酸鹽(例如:Na2 SO4 或K2 SO4 )、碳酸鹽(例如:Na2 CO3 或K2 CO3 )、硝酸鹽(例如:NaNO3 或KNO3 )、氫氧化物(例如:NaOH或KOH)、氟化物(例如:NaF或KF)或氫氟化物(例如:NaHF2 或KHF2 ),但不僅限於此。Next, in step 104, a compound containing an alkali metal element M is provided. In one embodiment, the compound of the alkali metal element M can be dissolved in a hydrofluoric acid solution to form a second solution, which is then mixed with the first solution in step 106 to produce a reaction. In another embodiment, a compound of the alkali metal element M in solid form can also be used directly. Further, the compound of the above alkali metal element M may be a sulfate (for example, Na 2 SO 4 or K 2 SO 4 ), a carbonate (for example, Na 2 CO 3 or K 2 CO 3 ), or a nitrate (for example, NaNO 3 ). Or KNO 3 ), hydroxide (for example: NaOH or KOH), fluoride (for example: NaF or KF) or hydrofluoride (for example: NaHF 2 or KHF 2 ), but is not limited thereto.

在一實施例中,鹼金屬元素M的化合物之濃度至少 可為1mol/L,例如:Na2 SO4 之濃度至少可為1.2mol/L,Na2 CO3 之濃度至少可為1.2mol/L,NaOH的濃度至少可為1.6mol/L。而氫氟酸溶液的濃度可為0.1至30mol/L,較佳可為20至30mol/L。In one embodiment, the concentration of the compound of the alkali metal element M may be at least 1 mol/L, for example, the concentration of Na 2 SO 4 may be at least 1.2 mol/L, and the concentration of Na 2 CO 3 may be at least 1.2 mol/L. The concentration of NaOH may be at least 1.6 mol/L. The concentration of the hydrofluoric acid solution may be from 0.1 to 30 mol/L, preferably from 20 to 30 mol/L.

再者,於步驟106中,在一實施例中,將上述之第 一溶液及含有鹼金屬元素M的化合物之第二溶液混合,或是直接將固體形式之鹼金屬元素M的化合物加入第一溶液中,使四價元素Z的氟化物、錳化物以及鹼金屬元素M的化合物產生反應以形 成沉澱物,此反應為放熱反應,因此較適當地將固體形式之鹼金屬元素M的化合物(或第二溶液)緩慢地加入第一溶液之中,此外,上述反應溫度可在20℃至60℃之範圍,例如:25℃。Furthermore, in step 106, in an embodiment, the foregoing Mixing a solution with a second solution of a compound containing an alkali metal element M, or directly adding a compound of the alkali metal element M in a solid form to the first solution to make a fluoride, a manganese compound, and an alkali metal element of the tetravalent element Z The compound of M produces a reaction to form Forming a precipitate, the reaction is an exothermic reaction, so that the compound (or the second solution) of the alkali metal element M in a solid form is slowly added to the first solution more slowly. Further, the above reaction temperature may be from 20 ° C to 60 ° The range of °C, for example: 25 °C.

接著,在步驟108中,於上述經步驟106反應之溶 液中加入丙酮。在一實施例中,步驟106為混合第一溶液及第二溶液的情況下,丙酮的添加量可為第一溶液及第二溶液總體積的40%至160%,較佳可為第一溶液及第二溶液總體積的80%至120%,例如:100%。在另一實施例中,步驟106是直接將固體形式之鹼金屬元素M的化合物加入第一溶液的情況下,丙酮的添加量可為第一溶液體積的100%至250%,較佳可為第一溶液體積的180%至220%,例如:200%。值得注意的是,於經步驟106反應之溶液中添加丙酮,可顯著地提高最終製成之螢光粉的產率及發光效率,在一實施例中,螢光粉的產率可達55%以上。雖然發明人發現可利用加入乙醇以增加螢光粉之產率,但乙醇會破壞螢光粉,相較之下,本發明使用丙酮既可提升螢光粉之產率,亦可避免破壞螢光粉。除此之外,發明人也意外地發現丙酮的添加可增加螢光粉之結晶度。Next, in step 108, the solution is dissolved in the above step 106. Acetone was added to the solution. In one embodiment, in the case where step 106 is to mix the first solution and the second solution, the amount of acetone added may be 40% to 160% of the total volume of the first solution and the second solution, preferably the first solution. And 80% to 120% of the total volume of the second solution, for example: 100%. In another embodiment, in the step 106, when the compound of the alkali metal element M in a solid form is directly added to the first solution, the acetone may be added in an amount of 100% to 250% of the volume of the first solution, preferably The first solution volume is from 180% to 220%, for example: 200%. It is worth noting that the addition of acetone to the solution reacted in step 106 can significantly increase the yield and luminous efficiency of the finally produced phosphor powder. In one embodiment, the yield of the phosphor powder can reach 55%. the above. Although the inventors have found that the addition of ethanol can be used to increase the yield of the phosphor powder, ethanol can destroy the phosphor powder. In contrast, the use of acetone in the present invention can both increase the yield of the phosphor powder and avoid destroying the fluorescent powder. powder. In addition, the inventors have unexpectedly discovered that the addition of acetone increases the crystallinity of the phosphor.

最後,在步驟110中,利用過濾、乾燥等習知技術, 收集步驟106及108所產生之沉澱物,所收集的沉澱物即為本創作所述之螢光粉M2 ZF6 :Mn4+ 。在一實施例中,可於40℃~80℃(例如:在60℃)的溫度範圍下乾燥螢光粉。Finally, in step 110, the precipitates generated in steps 106 and 108 are collected by conventional techniques such as filtration and drying, and the collected precipitates are the phosphor powder M 2 ZF 6 : Mn 4+ of the present invention. . In one embodiment, the phosphor can be dried at a temperature ranging from 40 ° C to 80 ° C (eg, at 60 ° C).

實施例1Example 1

將4.8g的二氧化矽(SiO2 )及1.1g的六氟錳二鉀(K2 MnF6 )溶於100mL的48wt%的氫氟酸(HF)溶液中,將17.04g的硫酸鈉(Na2 SO4 )緩慢地加入上述溶液中,接著加入100mL的丙酮,之後過濾反應生成之沉澱物,並放置於60℃的烘箱中進行乾燥,即可得到螢光粉Na2 SiF6 :Mn4+ 。經計算得到螢光粉之產率為57%。4.8 g of cerium oxide (SiO 2 ) and 1.1 g of hexafluoromanganese dipotassium (K 2 MnF 6 ) were dissolved in 100 mL of a 48 wt% hydrofluoric acid (HF) solution, and 17.04 g of sodium sulfate (Na) 2 SO 4 ) slowly added to the above solution, followed by adding 100 mL of acetone, and then filtering the precipitate formed by the reaction, and placing it in an oven at 60 ° C for drying to obtain a fluorescent powder Na 2 SiF 6 : Mn 4+ . The yield of the phosphor powder was calculated to be 57%.

比較例1Comparative example 1

製備方法與實施例1相同,但其中並未加入丙酮,所得到螢光粉Na2 SiF6 :Mn4+ 之產率為40%。The preparation method was the same as in Example 1, except that acetone was not added, and the yield of the obtained fluorescent powder Na 2 SiF 6 :Mn 4+ was 40%.

利用粉末X光繞射儀鑑定上述製備之Na2 SiF6 :Mn4+ ,得到如第2圖所示之X光粉末繞射圖譜,對照JCPDS(Joint Committee on Powder Diffraction Standards)之標準圖譜(第2圖所示之無機晶格資料庫(inorganic crystal structure database,ICSD)),可知所製備之螢光粉為純相,晶系之空間群屬於P321,具有與Na2 SiF6 對應之晶體結構。The above-prepared Na 2 SiF 6 :Mn 4+ was identified by a powder X-ray diffractometer to obtain an X-ray powder diffraction pattern as shown in Fig. 2, and a standard map of the JCPDS (Joint Committee on Powder Diffraction Standards) was compared. In the inorganic crystal structure database (ICSD) shown in Fig. 2, it is known that the prepared phosphor powder is a pure phase, and the space group of the crystal system belongs to P321, and has a crystal structure corresponding to Na 2 SiF 6 .

再者,使用光激光譜儀(Photoluminescence;PL)量測實施例1及比較例1所製備之螢光粉Na2 SiF6 :Mn4+ 之放光光譜。光激光譜儀為一種測量樣品激發與放射波段之非破壞性檢測技術,原理為利用激發光源使樣品之電子由基態躍遷至激發態,當 電子返回基態時會將能量以光能之形式釋放,藉由量測放光特性檢測樣品之光學性質。操作時,測量放射光譜乃將激發波長(λ ex)固定於特定值,偵測其放射光譜。測量結果如第4圖所示,實施例1製備之螢光粉相較於比較例1,具有較高的發光強度。Further, the luminescence spectrum of the phosphor powder Na 2 SiF 6 :Mn 4+ prepared in Example 1 and Comparative Example 1 was measured using a photoluminescence spectrometer (PL). The optical laser spectrometer is a non-destructive detection technique for measuring the excitation and emission bands of a sample. The principle is to use an excitation source to make the electrons of the sample transition from the ground state to the excited state. When the electron returns to the ground state, the energy is released in the form of light energy. The optical properties of the sample were measured by measuring the light emission characteristics. In operation, the measurement of the emission spectrum is performed by fixing the excitation wavelength (λ ex ) to a specific value and detecting the emission spectrum. Measurement Results As shown in Fig. 4, the phosphor powder prepared in Example 1 had a higher luminous intensity than Comparative Example 1.

由以上可知,本創作之發光二極體裝置中的螢光 粉,於製備過程中加入適量的丙酮,使得製成之螢光粉具有較佳之發光效率,且亦可提升螢光粉之產率及結晶度。As can be seen from the above, the fluorescent light in the light-emitting diode device of the present invention The powder is added with an appropriate amount of acetone during the preparation process, so that the prepared phosphor powder has better luminous efficiency, and can also increase the yield and crystallinity of the phosphor powder.

此外,將實施例1所製備之螢光粉與YAG螢光粉混 合,並實際封裝於藍光晶片上,量測其白光光譜,結果如第5圖所示,於200mA操作電流下,其放光效率為77.6lmW-1 ,CRI為86,R9=61。In addition, the phosphor powder prepared in Example 1 was mixed with YAG phosphor powder, and was actually packaged on a blue light wafer, and the white light spectrum was measured. The result was as shown in FIG. 5, and the light was emitted at a current of 200 mA. The efficiency is 77.6 lmW -1 , the CRI is 86, and R9 = 61.

接著,將第5圖的光譜數據利用Commission Internationale de L’Éclairage(CIE)轉換軟體取得其色度座標為(x=0.3126,y=0.2951),如第6圖所示。Next, use the spectrum data of Figure 5 to use the Commission. The Internationale de L'Éclairage (CIE) conversion software obtains its chromaticity coordinates as (x = 0.3126, y = 0.2951), as shown in Figure 6.

雖然本創作已以數個較佳實施例揭露如上,然其並非用以限定本創作,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作任意之更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any person skilled in the art can make any changes without departing from the spirit and scope of the present invention. And the retouching, therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

100‧‧‧螢光粉的製備方法100‧‧‧How to prepare fluorescent powder

102~110‧‧‧螢光粉的製備方法之步驟102~110‧‧‧Steps for preparing the phosphor powder

Claims (13)

一種發光二極體裝置,包括:一基座;一發光二極體晶片,設置於該基座內;一螢光膠材,包覆該發光二極體晶片,且一螢光粉分散於該螢光膠材中;以及一導線結構,電性連接該發光二極體晶片,上述發光二極體裝置的特徵在於,該螢光粉之製備方法包括一添加丙酮的步驟。A light-emitting diode device includes: a pedestal; a light-emitting diode chip disposed in the pedestal; a fluorescent glue material covering the light-emitting diode chip, and a phosphor powder dispersed therein In the fluorescent glue material; and a wire structure electrically connecting the light emitting diode chip, the light emitting diode device is characterized in that the method for preparing the phosphor powder comprises a step of adding acetone. 如申請專利範圍第1項所述之發光二極體裝置,其中該螢光粉具有下列化學式:M2 ZF6 :Mn4+ 其中M係擇自鈉或鉀的鹼金屬元素,Z係擇自矽或鈦的四價元素,且該螢光粉之製備方法包括:(a)提供一第一溶液,該第一溶液包括該四價元素Z的氟化物以及一擇自六氟錳二鈉(Na2 MnF6 )或六氟錳二鉀(K2 MnF6 )的錳化物;(b)提供一鹼金屬元素M的化合物,其擇自硫酸鹽、碳酸鹽、硝酸鹽、氫氧化物、氟化物或氫氟化物;(c)混合該第一溶液及該鹼金屬元素M的化合物進行反應,以形成一沉澱物;(d)於步驟(c)之後,加入丙酮於該第一溶液中;以及(e)於步驟(d)之後,收集該第一溶液之沉澱物。The light-emitting diode device according to claim 1, wherein the phosphor powder has the following chemical formula: M 2 ZF 6 : Mn 4+ wherein M is an alkali metal element selected from sodium or potassium, and Z is selected from a tetravalent element of barium or titanium, and the method for preparing the phosphor powder comprises: (a) providing a first solution comprising the fluoride of the tetravalent element Z and optionally from disodium hexafluoromanganese ( a manganese compound of Na 2 MnF 6 ) or hexafluoromanganese dipotassium (K 2 MnF 6 ); (b) a compound providing an alkali metal element M selected from the group consisting of sulfates, carbonates, nitrates, hydroxides, fluorine a compound or a hydrofluoride; (c) mixing the first solution and the alkali metal element M to form a precipitate; (d) after the step (c), adding acetone to the first solution; And (e) collecting the precipitate of the first solution after the step (d). 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(a)中,該第一溶液係將該四價元素Z的氧化物、氫氧化物或碳酸鹽以及該錳化物,溶於氫氟酸溶液(HF)所形成。The light-emitting diode device of claim 2, wherein in the step (a) of the method for preparing the phosphor powder, the first solution is an oxide or hydroxide of the tetravalent element Z or The carbonate and the manganese compound are formed by dissolving in a hydrofluoric acid solution (HF). 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(b)更包括提供一第二溶液,該第二溶液係將該鹼金屬元素M的化合物溶於氫氟酸溶液所形成。The light-emitting diode device of claim 2, wherein the step (b) of the method for preparing the phosphor powder further comprises providing a second solution which is a compound of the alkali metal element M Formed in a solution of hydrofluoric acid. 如申請專利範圍第4項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(d)中,丙酮的添加量係該第一溶液及該第二溶液的總體積之40%至160%。The light-emitting diode device of claim 4, wherein in the step (d) of the method for preparing the phosphor powder, the amount of acetone added is 40% of the total volume of the first solution and the second solution. % to 160%. 如申請專利範圍第5項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(d)中,丙酮的添加量係該第一溶液及該第二溶液的總體積之80%至120%。The light-emitting diode device of claim 5, wherein in the step (d) of the method for preparing the phosphor powder, the amount of acetone added is 80% of the total volume of the first solution and the second solution. % to 120%. 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(b)更包括提供一固體形式之鹼金屬元素M的化合物。The light-emitting diode device of claim 2, wherein the step (b) of the method for preparing the phosphor powder further comprises providing a compound of the alkali metal element M in a solid form. 如申請專利範圍第7項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(d)中,丙酮的添加量係該第一溶液之100%至250%。The light-emitting diode device according to claim 7, wherein in the step (d) of the method for preparing the phosphor powder, the amount of acetone added is 100% to 250% of the first solution. 如申請專利範圍第8項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(d)中,丙酮的添加量係該第一溶液之180%至220%。The light-emitting diode device according to claim 8, wherein in the step (d) of the method for preparing the phosphor powder, the amount of acetone added is from 180% to 220% of the first solution. 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的反應溫度在20℃至60℃的範圍。The light-emitting diode device according to claim 2, wherein the reaction temperature of the method for preparing the phosphor powder is in the range of 20 ° C to 60 ° C. 如申請專利範圍第1項所述之發光二極體裝置,其中該螢光粉的化學式係Na2 SiF6 :Mn4+The light-emitting diode device according to claim 1, wherein the chemical formula of the phosphor powder is Na 2 SiF 6 :Mn 4+ . 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(a)中,該第一溶液係將二氧化矽及六氟錳二鉀,溶於氫氟酸溶液所形成。The light-emitting diode device according to claim 2, wherein in the step (a) of the method for preparing the phosphor powder, the first solution is bismuth dioxide and hexafluoromanganese dipotassium dissolved in hydrogen Formed by a hydrofluoric acid solution. 如申請專利範圍第2項所述之發光二極體裝置,其中該螢光粉之製備方法的步驟(c)中,係將一固體形式之硫酸鈉(Na2 SO4 )加入該第一溶液中。The light-emitting diode device according to claim 2, wherein in the step (c) of the method for preparing the phosphor powder, a solid form of sodium sulfate (Na 2 SO 4 ) is added to the first solution. in.
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