CN110739604B - Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method - Google Patents

Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method Download PDF

Info

Publication number
CN110739604B
CN110739604B CN201911017403.6A CN201911017403A CN110739604B CN 110739604 B CN110739604 B CN 110739604B CN 201911017403 A CN201911017403 A CN 201911017403A CN 110739604 B CN110739604 B CN 110739604B
Authority
CN
China
Prior art keywords
layer
gainp
buffer layer
gainp buffer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911017403.6A
Other languages
Chinese (zh)
Other versions
CN110739604A (en
Inventor
李峰柱
田宇
刘潇杰
韩效亚
杜石磊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen Qianzhao Semiconductor Technology Co ltd
Original Assignee
Xiamen Qianzhao Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen Qianzhao Semiconductor Technology Co ltd filed Critical Xiamen Qianzhao Semiconductor Technology Co ltd
Priority to CN201911017403.6A priority Critical patent/CN110739604B/en
Publication of CN110739604A publication Critical patent/CN110739604A/en
Application granted granted Critical
Publication of CN110739604B publication Critical patent/CN110739604B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

The invention provides a semiconductor epitaxial structure based on a flexible substrate, a VCSEL and a manufacturing method, wherein fluorophlogopite is used as the substrate, so that the problems that the conventional semiconductor substrate cannot be bent and is not easy to peel are solved, and the temperature requirement of a semiconductor device is met. For the buffer layers, the first GaInP buffer layers gradually change layer by layer to present a step gradual change trend, and a second GaInP buffer layer with opposite In component step changing directions is inserted between two adjacent first GaInP buffer layers with In component step changing to form a structure with In component fluctuation gradual change, so that compressive stress is introduced into the buffer layers, the interaction of dislocation is increased, the surface is smoother, the threading dislocation is further reduced, the quality of an epitaxial layer on the fluorophlogopite substrate is improved, and the application of the fluorophlogopite substrate In a semiconductor device is realized. The VCSEL has the advantages of being bendable, easy to strip, good in epitaxial layer quality, high in light emitting efficiency and the like.

Description

Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flexible substrate-based semiconductor epitaxial structure, a VCSEL and a manufacturing method.
Background
The VCSEL, which is named as Vertical Cavity Surface Emitting Laser (Vertical Cavity Emitting Laser), is developed based on gallium arsenide semiconductor materials, is different from other light sources such as LED (light Emitting Diode) and LD (Laser Diode), has the advantages of small volume, circular output light spot, single longitudinal mode output, small threshold current, low price, easy integration into a large-area array, and the like, and is widely applied to the fields of optical communication, optical interconnection, optical storage, and the like.
The existing VCSEL usually has a GaAs substrate as a base, however, the GaAs substrate has limited applications of the VCSEL in flexible devices due to physical properties of being inflexible, having poor mechanical properties, being not easy to peel off, and the like. And GaAs substrates absorb light with a wavelength below 870nm, limiting device performance.
Most of the conventional flexible substrates are made of organic materials such as PET (polyethylene terephthalate), but the application temperature of the PET materials is below 200 ℃, so that the requirements of semiconductor devices such as VCSELs (vertical cavity surface emitting devices) cannot be met.
The molecular formula of the fluorophlogopite single crystal sheet is KMg3(AlSi3O10)F2Belong to monoclinic crystalThe system is typically a layered silicate. The temperature resistance is up to more than 1200 ℃, the vacuum air release is extremely low under the high temperature condition, and the coating has the characteristics of acid and alkali resistance, transparency, stripping, flexibility and the like. In the current research, only a C60 film or metal (such as molybdenum-tungsten-selenium alloy) is grown on fluorophlogopite, but fluorophlogopite is not used as a semiconductor epitaxial substrate, because the growth of a semiconductor epitaxial layer on the fluorophlogopite substrate is difficult.
Therefore, it is of great significance to apply fluorophlogopite as a substrate in semiconductor devices such as VCSELs.
Disclosure of Invention
In view of the above, the object of the present invention is: the flexible substrate-based semiconductor epitaxial structure and the manufacturing method thereof are provided, the fluorophlogopite is used as the substrate, and the application problem of the fluorophlogopite in the semiconductor device can be effectively solved, so that the semiconductor device has flexible characteristics. The VCSEL has the advantages of being bendable, easy to strip, high in light emitting efficiency and the like.
The technical scheme adopted by the invention is as follows:
a semiconductor epitaxial structure based on a flexible substrate, comprising a fluorophlogopite substrate and a buffer layer provided on the fluorophlogopite substrate, the buffer layer comprising:
the multilayer first GaInP buffer layer and at least one second GaInP buffer layer are sequentially arranged from bottom to top, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers.
Furthermore, the second GaInP buffer layer is multilayer, a second GaInP buffer layer is arranged between the fluorophlogopite substrate and the adjacent first GaInP buffer layer, and the second GaInP buffer layer and the adjacent first GaInP buffer layer are in step change in the direction opposite to the gradual change direction of the multilayer first GaInP buffer layer.
Further, the In compositions of the multiple layers of the first GaInP buffer layers decrease layer by layer, and the In compositions of the second GaInP buffer layers are respectively higher than the In compositions of the adjacent first GaInP buffer layers.
Further, the In composition of the second GaInP buffer layers of the plurality of layers is the same.
Further, In components of the multiple layers of the second GaInP buffer layer decrease from bottom to top layer by layer.
Further, the In composition of the first and second GaInP buffer layers ranges from 0.48 to 0.62.
Further, the lattice constant of the first layer of the buffer layer is higher than that of the fluorophlogopite substrate, and the lattice constant of the last layer of the buffer layer is lower than that of the fluorophlogopite substrate.
The invention adopts another technical scheme that:
a manufacturing method of a semiconductor epitaxial structure based on a flexible substrate comprises the following steps:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising:
the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers.
The invention adopts another technical scheme that:
a VCSEL comprising the above-mentioned flexible substrate-based semiconductor epitaxial structure, further comprising: and the N-type DBR layer, the multi-quantum well layer, the oxide layer and the P-type DBR layer are sequentially stacked on the buffer layer.
The invention adopts another technical scheme that:
a method of fabricating a VCSEL comprising:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising: the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers;
and sequentially growing an N-type DBR layer, a multi-quantum well layer, an oxide layer and a P-type DBR layer on one side of the buffer layer, which is far away from the fluorophlogopite substrate.
From the above description it follows that:
(1) the flexible substrate-based semiconductor epitaxial structure adopts the fluorophlogopite substrate, solves the problems of inflexibility, poor mechanical property and difficult peeling of the conventional semiconductor substrate, and also considers the temperature requirement of a semiconductor device. For the buffer layers, the first GaInP buffer layers gradually change layer by layer to present a step gradual change trend, and a second GaInP buffer layer with opposite In component step changing directions is inserted between two adjacent first GaInP buffer layers with In component step changing to form a structure with In component fluctuation gradual change, so that compressive stress is introduced into the buffer layers, the interaction of dislocation is increased, the surface is smoother, the threading dislocation is further reduced, the quality of an epitaxial layer on the fluorophlogopite substrate is improved, and the application of the fluorophlogopite substrate In a semiconductor device is realized.
(2) According to the manufacturing method of the semiconductor epitaxial structure based on the flexible substrate, the buffer layer grows on the fluorophlogopite substrate In the mode that the In component fluctuates and gradually changes, the compressive stress is introduced into the buffer layer, the growth difficulty of the buffer layer on the fluorophlogopite substrate is reduced to a great extent, the epitaxial layer with smooth surface and high crystal quality is manufactured, the problem that the buffer layer is not easy to grow when the fluorophlogopite is used as the semiconductor substrate is effectively solved, and the application of the fluorophlogopite substrate In a semiconductor device is realized.
(3) The VCSEL adopts fluorophlogopite as a substrate and a special buffer layer design with gradually changed In component fluctuation, and has the advantages of being bendable, easy to strip, good In epitaxial layer quality, high In light emitting efficiency and the like.
(4) The VCSEL manufacturing method can manufacture the VCSEL which is bendable, easy to strip, good in epitaxial layer quality and high in light emitting efficiency, and is simple in manufacturing process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a flexible substrate-based semiconductor epitaxial structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram of In composition of a buffer layer of a semiconductor epitaxial structure based on a flexible substrate varying with thickness from bottom to top according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a VCSEL device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a semiconductor epitaxial structure according to a first embodiment of the present invention;
fig. 5 is a schematic view of a semiconductor epitaxial structure of a flexible substrate-based semiconductor epitaxial structure according to a first embodiment of the present invention, in which a lattice constant from bottom to top varies with a thickness;
fig. 6 is a schematic structural diagram of a VCSEL according to a third embodiment of the present invention.
1. A fluorophlogopite substrate; 2. a buffer layer; 21. a first GaInP buffer layer; 22. a second GaInP buffer layer; 3. an N-type DBR layer; 4. a multiple quantum well layer; 5. an oxide layer; 6. a P-type DBR layer; 7. a first separate confinement heterojunction; 8. the second separation confines the heterojunction.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Please refer to fig. 1-6:
the invention provides a semiconductor epitaxial structure based on a flexible substrate, which comprises a fluorophlogopite substrate 1 and a buffer layer 2 arranged on the fluorophlogopite substrate 1, wherein the buffer layer 2 comprises:
a plurality of first GaInP buffer layers 21 and at least one second GaInP buffer layer 22, wherein the plurality of first GaInP buffer layers 21 are arranged from bottom to top In sequence, and In components gradually change from layer to layer; the second GaInP buffer layer 22 is arranged between two adjacent first GaInP buffer layers 21, and the second GaInP buffer layer 22 and the two adjacent first GaInP buffer layers 21 are in a step change, and the direction of the step change is opposite to the gradual change direction of the multiple first GaInP buffer layers 21. As can be seen from the above, the In components of the multiple first GaInP buffer layers 21 rise In a step or fall In a step, and the second GaInP buffer layer 22 with the opposite In-component step direction is inserted between two adjacent first GaInP buffer layers 21, as shown In fig. 1, which is a schematic structural diagram of the semiconductor epitaxial structure based on the flexible substrate according to the present invention. Fig. 2 is a schematic diagram showing the In composition of the buffer layer from bottom to top as a function of thickness, In which the abscissa indicates the thickness and the ordinate indicates the In composition, a1 and a3 are the In composition of the first GaInP buffer layer, respectively, and a2 is the In composition of the second GaInP buffer layer. It is to be noted that the lattice constant of GaInP decreases with decreasing In composition and increases with increasing In composition, and thus the schematic diagram of the lattice constant of the buffer layer with thickness is the same as that of fig. 2.
Further, the second GaInP buffer layer 22 is a multilayer, the second GaInP buffer layer 22 is disposed between the fluorophlogopite substrate 1 and the adjacent first GaInP buffer layer 21, and a step change opposite to the gradient direction of the multilayer first GaInP buffer layer 21 is formed between the second GaInP buffer layer 22 and the adjacent first GaInP buffer layer 21.
Further, the In composition of the first GaInP buffer layer 21 decreases layer by layer, and the In composition of the second GaInP buffer layer 22 is higher than that of the first GaInP buffer layer 21 adjacent thereto, respectively.
Further, the In composition of the second GaInP buffer layer 22 of the plurality of layers is the same.
Further, the In composition of the second GaInP buffer layer 22 decreases layer by layer from bottom to top.
In the invention, the In components of the multilayer first GaInP buffer layers preferably decrease layer by layer and show a step descending trend, and the second GaInP buffer layers show a step ascending trend relative to the adjacent first GaInP buffer layers. The In composition of the multilayer second GaInP buffer layer can be unchanged, and the In composition of the buffer layer can be reduced layer by layer to realize the fluctuation reduction of the In composition of the buffer layer. Of course, the present invention preferably decreases the In composition of the second GaInP buffer layer by layer so that the buffer layer can be more easily lattice-matched to the fluorophlogopite substrate.
The existing metamorphic buffer layer adopts components to increase or reduce layer by layer to reach a target lattice constant, although dislocation can be prevented from extending upwards, the effect of releasing stress is insufficient, and the problems of wafer warpage and rough surface are easy to occur. Compared with the traditional buffer layer with gradually changed components layer by layer, the buffer layer disclosed by the invention adopts a mode that the In component fluctuates and descends to enable the strain field to be more uniform. During the growth process, surface atoms are promoted to be diffused in proper positions and the surface roughness is reduced; in turn, the improved surface morphology results in a reduced likelihood of preventing dislocation glide and better stress relief. According to the buffer layer, the second GaInP buffer layer with opposite In component step directions is inserted between the first GaInP buffer layers with two adjacent layers of In component step descending, the In component is In a fluctuation descending mode, compressive stress is introduced into the buffer layer, the interaction of dislocation is increased, and the dislocation disappears.
Preferably, the In compositions of the first GaInP buffer layer 21 and the second GaInP buffer layer 22 are In the range of 0.48 to 0.62, respectively. The thicknesses of the buffer layers 2 are the same, and the In component changes abruptly.
Further, the lattice constant of the first layer of the buffer layer 2 is higher than that of the fluorophlogopite substrate 1, and the lattice constant of the last layer of the buffer layer 2 is lower than that of the fluorophlogopite substrate 1.
The In component ranges from 0.48 to 0.62, and the lattice constant of GaInP is closer to that of fluorophlogopite substrate. The lattice constant of the buffer layer is adjusted to be reduced from higher than the fluctuation of the substrate to lower than the fluctuation of the fluorophlogopite by controlling the In component of the buffer layer to fluctuate within the range of 0.48-0.62, thereby achieving the purposes of reducing lattice mismatch and dislocation and realizing better growth of an epitaxial layer on the fluorophlogopite substrate.
The invention also provides a manufacturing method of the semiconductor epitaxial structure based on the flexible substrate, which is used for manufacturing the semiconductor epitaxial structure based on the flexible substrate and comprises the following steps:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising:
the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers.
The specific arrangement of the buffer layer refers to the above semiconductor epitaxial structure based on the flexible substrate, and is not described herein again.
Referring to fig. 3, the present invention further provides a VCSEL including the above semiconductor epitaxial structure based on a flexible substrate, further including: and the N-type DBR layer 3, the multi-quantum well layer 4, the oxide layer 5 and the P-type DBR layer 6 are sequentially laminated on the buffer layer 2.
The specific arrangement of the buffer layer refers to the above semiconductor epitaxial structure based on the flexible substrate, and is not described herein again.
The invention also provides a method for manufacturing the VCSEL, which is used for manufacturing the VCSEL and comprises the following steps:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising: the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers;
and sequentially growing an N-type DBR layer, a multi-quantum well layer, an oxide layer and a P-type DBR layer on one side of the buffer layer, which is far away from the fluorophlogopite substrate.
The specific arrangement of the buffer layer refers to the above semiconductor epitaxial structure based on the flexible substrate, and is not described herein again.
According to the invention, through the special design that the In component of the buffer layer is reduced In a fluctuating manner, the epitaxial layer can be better grown on the fluorophlogopite substrate, a better foundation is provided for the VCSEL structure, and the fluorophlogopite substrate is adopted, so that the VCSEL structure has the characteristics of flexibility and easiness In stripping. Meanwhile, the fluorophlogopite substrate does not absorb light of 200nm-2500nm, so that light transmission is increased, external quantum efficiency is improved, and high light extraction rate is realized.
The following are specific embodiments of the present invention:
the first embodiment is as follows:
a semiconductor epitaxial structure based on a flexible substrate, as shown in FIG. 4, comprises a fluorophlogopite substrate 1 and a buffer layer 2 arranged on the fluorophlogopite substrate 1, wherein the buffer layer 2 comprises:
a multilayer first GaInP buffer layer 21 and a multilayer second GaInP buffer layer 22, wherein the multilayer first GaInP buffer layer 21 is arranged on the fluorophlogopite substrate 1 from bottom to top in sequence; the second GaInP buffer layers 22 are respectively arranged between two adjacent first GaInP buffer layers 21 and between the fluorophlogopite substrate 1 and the adjacent first GaInP buffer layers 21. That is, the second GaInP buffer layers 22 and the first GaInP buffer layers 21 are alternately disposed on the fluorophlogopite substrate 1 from bottom to top in this order.
The In composition of the first GaInP buffer layer 21 decreases from bottom to top, the In composition of the second GaInP buffer layer 22 decreases from bottom to top, and the In compositions of the second GaInP buffer layers 22 are respectively higher than those of the first GaInP buffer layer 21 adjacent thereto. The In composition In the first GaInP buffer layer 21 and the second GaInP buffer layer 22 ranges from 0.48 to 0.62, respectively, excluding the endpoints. The lattice constant of the first layer of the buffer layer 2 is higher than that of the fluorophlogopite substrate 1, and the lattice constant of the last layer of the buffer layer 2 is lower than that of the fluorophlogopite substrate 1. The buffer layer 2 has the same thickness of each layer.
In a specific arrangement, the first GaInP buffer layer 21 and the second GaInP buffer layer 22 are three layers, and the buffer layer 2 comprises 6 sub-layers in total. Fig. 5 shows a schematic diagram of the change of the lattice constant of the semiconductor epitaxial structure from bottom to top with the thickness, in which the abscissa indicates the thickness, the ordinate indicates the lattice constant, b0 indicates the lattice constant of the fluorophlogopite substrate 1, b1, b3, and b5 respectively indicate the lattice constant of the second GaInP buffer layer 22 from bottom to top, and b2, b4, and b6 respectively indicate the lattice constant of the first GaInP buffer layer 21 from bottom to top. The sizes of b1, b2, b3, b4, b5, b6 were adjusted by controlling the In composition to vary In the range of 0.48 to 0.62 (the variation tendency of the In composition is the same as that of the lattice constant). In order to introduce compressive stress, b1 is made slightly larger than the substrate lattice constant, b1> b2, b3> b2 and b5> b4, and b1> b3> b5, with the proviso that b2> b4> b6 and b6< b0 are ensured. It will be understood by those skilled in the art that the symbol ">" means greater than and the symbol "<" means less than.
Example two:
a method for growing a semiconductor epitaxial structure based on a flexible substrate, which is used for manufacturing the semiconductor epitaxial structure based on the flexible substrate in the first embodiment, includes:
providing a fluorophlogopite substrate;
and buffer layers are grown on the fluorophlogopite substrate and comprise a plurality of first GaInP buffer layers and a plurality of second GaInP buffer layers, the plurality of first GaInP buffer layers are sequentially grown from bottom to top, and the second GaInP buffer layers are respectively arranged between two adjacent first GaInP buffer layers and between the fluorophlogopite substrate and the adjacent first GaInP buffer layers. Specifically, a buffer layer including a plurality of layers of the first GaInP buffer layer and a plurality of layers of the second GaInP buffer layer may be formed by alternately growing the second GaInP buffer layer and the first GaInP buffer layer on the fluorophlogopite substrate several times in sequence. The In components of the first GaInP buffer layers of the multiple layers are reduced layer by layer from bottom to top, the In components of the second GaInP buffer layers of the multiple layers are reduced layer by layer from bottom to top, and the In components of the second GaInP buffer layers are respectively higher than those of the first GaInP buffer layers adjacent to the second GaInP buffer layers. The In compositions In the first and second GaInP buffer layers range from 0.48 to 0.62, respectively, excluding end points. The lattice constant of the last layer of the buffer layer is lower than that of the fluorophlogopite substrate, and the lattice constant of the first layer of the buffer layer is higher than that of the fluorophlogopite substrate.
Example three:
a VCSEL including the flexible substrate-based semiconductor epitaxial structure according to the first embodiment, further comprising: the N-type DBR layer 3, the first separation limiting heterojunction 7, the multiple quantum well layer 4, the second separation limiting heterojunction 8, the oxide layer 5 and the P-type DBR layer 6 are sequentially stacked on the buffer layer 2 from bottom to top, and the structural schematic diagram is shown in fig. 6.
Example four:
a method for fabricating a VCSEL according to the third embodiment, comprising:
s1, providing a fluorophlogopite substrate, and baking the fluorophlogopite substrate for a period of time at high temperature in a hydrogen environment to remove impurities on the surface of the substrate and remove adsorbed gas.
S2, growing a buffer layer with the material of GaInP and the In component range of 0.48-0.62 on the fluorophlogopite substrate, wherein the growth pressure is 50mbar, and the growth temperature is 610 ℃. The buffer layer is grown In a mode that In component fluctuation is reduced, and specifically, the buffer layer comprises: the multilayer first GaInP buffer layer and the multilayer second GaInP buffer layer are sequentially arranged on the fluorophlogopite substrate from bottom to top, and In components are reduced layer by layer; the second GaInP buffer layers are respectively arranged between two adjacent first GaInP buffer layers and between the fluorophlogopite substrate and the adjacent first GaInP buffer layers, the In components of the second GaInP buffer layers are reduced layer by layer from bottom to top, and the In components of the second GaInP buffer layers are respectively higher than the In components of the first GaInP buffer layers adjacent to the second GaInP buffer layers. The In compositions In the first and second GaInP buffer layers range from 0.48 to 0.62, respectively, excluding end points. The lattice constant of the last layer of the buffer layer is lower than that of the fluorophlogopite substrate, and the lattice constant of the first layer of the buffer layer is higher than that of the fluorophlogopite substrate. The thicknesses of all layers of the buffer layer are the same.
S3, growing an N-type DBR layer on the side of the buffer layer opposite to the fluorophlogopite substrate, wherein the N-type DBR layer is composed of AlGaAs (Al component range of 0.2-0.9) with different refractive indexes and optical thickness of lambda/4, the period is 40, Si is adopted for doping, and the doping concentration is 3e18cm-3。
S4 growing a first separate confinement heterojunction of AlGaAs (Al component in the range of 0.3-0.6) with thickness of 400nm doped with Si and doping concentration of 1.5e18cm on the side of the N-type DBR layer facing away from the buffer layer-3。
S5, growing a multi-quantum well layer on the side of the first separation limiting heterojunction, which is far away from the N-type DBR layer, wherein the multi-quantum well layer is composed of 3 pairs of InyGa1-yAs/AlxGa1-xAs (0< y < x < 1).
S6 growing a second split confinement heterojunction of AlGaAs (Al composition in the range of 0.3-0.6) on the side of the MQW layer away from the first split confinement heterojunction, with a thickness of 400nm, doped with C, and doped with 1.5e18cm-3。
S7, growing an oxide layer of Al0.98GaAs on the side, away from the multiple quantum wells, of the second separation limiting heterojunction, wherein the oxide layer is 30nm thick and doped C is 3e18cm-3。
S8, growing a P-type DBR layer on the side of the oxide layer facing away from the second separation-limiting heterojunction, the P-type DBR layer being composed of AlGaAs (Al component in the range of 0.2-0.9) with different refractive index and optical thickness of lambda/4, the period being 20, and being doped with C and 3e18cm-3。
In conclusion, compared with the traditional GaAs substrate, the fluorophlogopite substrate has certain flexibility, and a bendable flexible semiconductor device is realized; the epitaxial layer and the substrate can be stripped without damage, the utilization rate of the substrate is improved, and the cost is reduced; the light extraction efficiency of the VCSEL can be improved to a great extent. The special design that the fluctuation of the In component of the buffer layer is reduced solves the problem that the difficulty of directly growing an epitaxial layer on a flexible substrate such as fluorophlogopite is high; the composition range of the buffer layer In is 0.48-0.62, so that the half-peak width of XRD of the AlGaAs material is obviously reduced from 240 to 100, and the crystal quality of the VCSEL is obviously improved.
It is to be understood that the terms "upper", "lower", and the like, as used herein, are used in a descriptive sense only and not for purposes of limitation, and are not intended to be interpreted as indicating or implying that the referenced devices or elements must be in a particular orientation, constructed or operated in a particular manner.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A semiconductor epitaxial structure based on a flexible substrate is characterized by comprising a fluorophlogopite substrate and a buffer layer arranged on the fluorophlogopite substrate, wherein the buffer layer comprises:
the multilayer first GaInP buffer layer and at least one second GaInP buffer layer are sequentially arranged from bottom to top, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers.
2. A semiconductor epitaxial structure on the basis of a flexible substrate according to claim 1, wherein the second GaInP buffer layer is a multilayer, a second GaInP buffer layer is provided between the fluorophlogopite substrate and the adjacent first GaInP buffer layer, and a step change opposite to the gradual change direction of the multilayer first GaInP buffer layer is provided between the second GaInP buffer layer and the adjacent first GaInP buffer layer.
3. The flexible substrate-based semiconductor epitaxial structure according to claim 2, wherein the In composition of the first GaInP buffer layers decreases layer by layer, and the In compositions of the second GaInP buffer layers are respectively higher than those of the first GaInP buffer layers adjacent thereto.
4. The flexible substrate-based semiconductor epitaxial structure according to claim 3, wherein In compositions of the multiple layers of the second GaInP buffer layer are the same.
5. The flexible substrate-based semiconductor epitaxial structure according to claim 3, wherein the In composition of the second GaInP buffer layers of the plurality of layers decreases layer by layer from bottom to top.
6. The flexible substrate-based semiconductor epitaxial structure of claim 1, wherein the In composition In the first and second GaInP buffer layers ranges from 0.48 to 0.62, respectively.
7. The flexible substrate-based semiconductor epitaxial structure according to claim 1, wherein the lattice constant of the first layer of the buffer layer is higher than the lattice constant of the fluorophlogopite substrate, and the lattice constant of the last layer of the buffer layer is lower than the lattice constant of the fluorophlogopite substrate.
8. A method for manufacturing a semiconductor epitaxial structure based on a flexible substrate is characterized by comprising the following steps:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising:
the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers.
9. A VCSEL comprising the flexible substrate-based semiconductor epitaxial structure of any of claims 1-7, further comprising: and the N-type DBR layer, the multi-quantum well layer, the oxide layer and the P-type DBR layer are sequentially stacked on the buffer layer.
10. A method of fabricating a VCSEL, comprising:
providing a fluorophlogopite substrate;
growing a buffer layer on the fluorophlogopite substrate, the buffer layer comprising: the multilayer first GaInP buffer layers are sequentially arranged along the growth direction, and In components gradually change layer by layer; the second GaInP buffer layer is arranged between two adjacent first GaInP buffer layers, the second GaInP buffer layer and the two adjacent first GaInP buffer layers are in step change, and the step change direction is opposite to the gradual change direction of the multiple first GaInP buffer layers;
and sequentially growing an N-type DBR layer, a multi-quantum well layer, an oxide layer and a P-type DBR layer on one side of the buffer layer, which is far away from the fluorophlogopite substrate.
CN201911017403.6A 2019-10-24 2019-10-24 Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method Active CN110739604B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911017403.6A CN110739604B (en) 2019-10-24 2019-10-24 Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911017403.6A CN110739604B (en) 2019-10-24 2019-10-24 Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method

Publications (2)

Publication Number Publication Date
CN110739604A CN110739604A (en) 2020-01-31
CN110739604B true CN110739604B (en) 2021-03-09

Family

ID=69271209

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911017403.6A Active CN110739604B (en) 2019-10-24 2019-10-24 Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method

Country Status (1)

Country Link
CN (1) CN110739604B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018132521A1 (en) 2017-01-16 2018-07-19 Canthus Technologies Llc Combining light-emitting elements of differing divergence on the same substrate
CN113396486A (en) 2019-02-21 2021-09-14 苹果公司 Indium phosphide VCSEL with dielectric DBR
WO2020205166A1 (en) 2019-04-01 2020-10-08 Apple Inc. Vcsel array with tight pitch and high efficiency
US11374381B1 (en) 2019-06-10 2022-06-28 Apple Inc. Integrated laser module

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148056A (en) * 1995-11-17 1997-06-06 Watanabe Shoko:Kk Quartz plate heater and its manufacture
JPH11135882A (en) * 1997-10-28 1999-05-21 Sharp Corp Compound semiconductor substrate, manufacture thereof, and light-emitting element
CN1510764A (en) * 2002-12-23 2004-07-07 威凯科技股份有限公司 High crystal lattice Jiongyu matched luminescent element
CN102011182B (en) * 2010-09-28 2013-03-13 中国电子科技集团公司第十八研究所 Method for manufacturing lattice graded buffer layer
US9165766B2 (en) * 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
CN105576111B (en) * 2016-01-26 2017-12-29 电子科技大学 A kind of preparation method of bismuth layer-like compound superlattices
CN105932049B (en) * 2016-05-23 2021-02-12 北京华碳元芯电子科技有限责任公司 Nanometer diode device and preparation method thereof
CN107910750B (en) * 2017-06-28 2021-04-16 超晶科技（北京）有限公司 Preparation method of semiconductor laser material

Also Published As

Publication number Publication date
CN110739604A (en) 2020-01-31

Similar Documents

Publication Publication Date Title
CN110739604B (en) Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method
CN104659170B (en) A kind of LED epitaxial slice and preparation method thereof
CN103367589B (en) For the manufacture of the method for the group III nitride semiconductor containing Ga
JP6159796B2 (en) Nitride semiconductor multilayer mirror and light emitting device using the same
CN102760807B (en) Nitride semiconductor light-emitting diode
CN104952990A (en) Epitaxial wafer of light emitting diode and method for manufacturing epitaxial wafer
CN109786529A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN107408602B (en) UV light emitting diode
CN108336203A (en) A kind of gallium nitride based LED epitaxial slice and its manufacturing method
JP2012059772A (en) Semiconductor light-emitting element
CN107845712B (en) Nitrogen-containing semiconductor element
TWI766814B (en) Manufacturing method of semiconductor optical element
KR20180123084A (en) Semiconductor wafer
CN109860359A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
US7960745B2 (en) Light emitting device and method of fabricating the same
CN115085009A (en) High-performance InAs quantum dot laser and preparation method thereof
CN103368074B (en) Semiconductor laser active area, semiconductor laser and preparation method thereof
CN110165552A (en) One kind having high-power VCSEL chip and preparation method thereof
JP2017216280A (en) Group iii nitride semiconductor light-emitting device and method for manufacturing the same
CN105470813A (en) Compressive strain quantum well semiconductor laser epitaxial structure and quantum well laser
CN109686823A (en) A kind of gallium nitride based LED epitaxial slice and preparation method thereof
CN109671816A (en) A kind of epitaxial wafer of light emitting diode and preparation method thereof
CN109473516A (en) A kind of gallium nitride based LED epitaxial slice and its growing method
CN114420801A (en) Preparation method of light-emitting diode epitaxial wafer and epitaxial wafer
WO2010024230A1 (en) METHOD FOR MANUFACTURING AlGaAs SUPPORT SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL WAFER, METHOD FOR MANUFACTURING LED, AlGaAs SUPPORT SUBSTRATE, EPITAXIAL WAFER, AND LED

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant