CN110729335A - Display panel and preparation method thereof - Google Patents
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- CN110729335A CN110729335A CN201911030303.7A CN201911030303A CN110729335A CN 110729335 A CN110729335 A CN 110729335A CN 201911030303 A CN201911030303 A CN 201911030303A CN 110729335 A CN110729335 A CN 110729335A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- H10K77/111—Flexible substrates
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Abstract
The invention provides a display panel and a preparation method thereof, wherein the display panel comprises: the packaging structure comprises a back plate, an inorganic layer, a flexible substrate layer, a thin film transistor layer, a light-emitting layer and a packaging layer, wherein the back plate is provided with a first through hole; the flexible substrate layer is provided with a second through hole which is opposite to the first through hole; the thin film transistor layer is provided with a third through hole which is opposite to the second through hole; the luminous layer is provided with a fourth through hole which is arranged opposite to the third through hole. The invention has the technical effects of increasing the area of the display area and improving the screen occupation ratio of the display panel.
Description
Technical Field
The invention relates to the field of display, in particular to a display panel and a preparation method thereof.
Background
In recent years, Active Matrix Organic Light Emitting Diodes (AMOLEDs) have attracted much attention and have been used to achieve high contrast, wide viewing angle, and flexible implementation. With the increasing demand of people on visual aesthetics, the frame of the display screen is narrowed, the full-screen and various irregular screens come along with the frame are gradually appeared in the visual field of people.
The mobile phone screen with the ultra-narrow frame in the prior art has the advantages that the surrounding frames are all narrow, the area of a display area is large, when the display screen is designed, due to the fact that narrowing of the frames is pursued, the upper frame does not have enough space for installing the camera, a through hole is designed in the display area, the through hole is usually of a round hole structure, the general aperture is small as much as possible for attractiveness, but the through hole needs to be matched with the camera, and the round hole can not be displayed. The camera is several millimeters in thickness usually, installs between cell phone case and display screen, if will obtain good shooting effect, then the round hole region needs transparent enough or adopts the through-hole mode.
Since the transmittances of the flexible substrate layer 100 and the anode and cathode materials of the OLED device are too low, it is very difficult to satisfy the requirement of transparency of the circular hole region, so that the through hole structure is easy to implement, and the hole opening is generally performed after the encapsulation is completed.
As shown in fig. 1, the conventional display panel includes a flexible substrate layer 100, a thin-film transistor layer 200, a light-emitting layer 300, and an encapsulation layer 400.
In order to avoid the influence of the opening process on the package layer 400, a certain width W is usually reserved at the boundary of the package layer 400 from the through hole2In order to ensure the encapsulation effect and prevent the light emitting layer 300 from being corroded by water and oxygen, a certain width W is reserved at the boundary of the light emitting layer 300 and the through hole1In W1And W2Is not displayed within the width of the display screen, thus increasing the area of a non-display area, reducing the screen occupation ratio and influencing the appearance.
Disclosure of Invention
The invention aims to solve the technical problems that the display area of the existing under-screen camera shooting display device is small and the screen occupation ratio of the display device is low.
To achieve the above object, the present invention provides a display panel including: the back plate is provided with a first through hole; the inorganic layer is arranged on the surface of one side of the back plate; the flexible substrate layer is arranged on the surface of one side, away from the backboard, of the inorganic layer, and is provided with a second through hole which is opposite to the first through hole; the thin film transistor layer is arranged on the surface of one side, away from the inorganic layer, of the flexible substrate layer, and is provided with a third through hole which is opposite to the second through hole; the light-emitting layer is arranged on the surface of one side, away from the flexible substrate layer, of the thin film transistor layer, and is provided with a fourth through hole which is opposite to the third through hole; and the packaging layer is arranged on the surface of one side, away from the thin film transistor layer, of the light-emitting layer and is filled into the second through hole, the third through hole and the fourth through hole.
Further, the inner diameters of the first through hole, the second through hole, the third through hole and the fourth through hole are the same.
Further, the light transmittance of the inorganic layer is 95% -100%.
Further, the inorganic layer includes: the first inorganic layer is arranged on the surface of one side of the back plate; and the second inorganic layer is arranged on the surface of the first inorganic layer far away from one side of the back plate.
Further, the inorganic layer further comprises a third inorganic layer arranged on the surface of the second inorganic layer far away from the first inorganic layer.
Further, the encapsulation layer includes: the first packaging layer is coated on the surfaces and the side faces of the luminescent layer and the side faces of the thin film transistor far away from the flexible substrate layer and attached to the bottom and the inner side wall of the second through hole; the second packaging layer is arranged on the surface of one side, away from the light-emitting layer, of the first packaging layer and is filled in the second through hole; and the third packaging layer is coated on the surfaces of the second packaging layer and the first packaging layer, which are far away from one side of the flexible substrate layer.
In order to achieve the above object, the present invention further provides a method for manufacturing a display panel, including the steps of: a sacrificial layer preparation step, namely preparing a sacrificial layer on the upper surface of a hard substrate; preparing an inorganic layer on the upper surface of the sacrificial layer; preparing a flexible substrate layer on the upper surface of the inorganic layer; a patterning step, wherein the flexible substrate layer is subjected to patterning to form a second through hole; preparing a thin film transistor layer, namely preparing the thin film transistor layer on the upper surface of the flexible substrate layer, wherein the thin film transistor layer forms a third through hole and is arranged opposite to the second through hole; preparing a luminescent layer on the upper surface of the thin film transistor layer, wherein the luminescent layer forms a fourth through hole and is arranged opposite to the third through hole; preparing a packaging layer, coating the upper surfaces and the side surfaces of the light-emitting layer and the thin film transistor layer, and filling the packaging layer into the second through hole, the third through hole and the fourth through hole; a peeling step of peeling the hard substrate and the sacrificial layer; and a back plate attaching step of attaching a back plate to the lower surface of the inorganic layer, wherein the back plate is provided with a first through hole opposite to the second through hole.
Further, the inorganic layer preparing step includes the steps of: a first inorganic layer preparing step of preparing a first inorganic layer on an upper surface of the sacrificial layer; a second inorganic layer preparing step of preparing a second inorganic layer on the upper surface of the first inorganic layer.
Further, the inorganic layer preparing step further includes a third inorganic layer preparing step of preparing a third inorganic layer on the upper surface of the second inorganic layer.
Further, the light emitting layer preparing step includes the steps of: evaporating a light emitting layer on the upper surface of the thin film transistor layer, the bottom of the second through hole and the inner side wall; and etching, namely removing the light emitting layer at the bottom and the inner side wall of the second through hole after etching treatment.
The invention has the technical effects that the inner diameters of the second through hole, the third through hole and the fourth through hole are the same, so that the luminescent layer and the thin film transistor layer are aligned at the edge of the through hole, the area of a display area is increased, the screen occupation ratio of the display device is improved, and the requirements of current customers on a comprehensive screen are met. After the inorganic layer is added, the packaging layer can be filled in the second through hole to completely package the second through hole, and the packaging effect is ensured.
Drawings
FIG. 1 is a schematic diagram of a display panel in the prior art;
FIG. 2 is a flowchart illustrating a method for fabricating a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an inorganic layer according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another inorganic layer according to an embodiment of the present invention;
FIG. 5 is a block diagram of a display panel after a step of preparing a flexible substrate layer according to an embodiment of the invention;
FIG. 6 is a structural diagram of a display panel after a thin film transistor layer is fabricated according to an embodiment of the invention
FIG. 7 is a structural diagram of a display panel after the light-emitting layer is evaporated according to an embodiment of the present invention;
FIG. 8 is a structural diagram of a display panel after etching the light emitting layer according to an embodiment of the present invention;
FIG. 9 is a structural diagram of the display panel after the peeling step in the embodiment of the present invention;
fig. 10 is a schematic structural diagram of a display panel according to an embodiment of the invention.
Some of the components are identified as follows:
100. a flexible substrate layer; 200. a thin film transistor layer; 300. a light emitting layer; 400, respectively; a packaging layer;
1. a hard substrate; 2. a sacrificial layer; 3. an inorganic layer; 4. a flexible substrate layer; 5. a thin film transistor layer; 6. a light emitting layer; 7. a packaging layer; 8. a back plate;
31. a first inorganic layer; 32. a second inorganic layer; 33. a third inorganic layer;
41. a second through hole; 51. a third through hole; 61. a fourth via hole; 81. a first through hole;
71. a first encapsulation layer; 72. a second encapsulation layer; 73. and a third encapsulation layer.
Detailed Description
The following detailed description of the preferred embodiments of the present invention is provided to enable those skilled in the art to make and use the present invention in a complete manner, and is provided for illustration of the technical disclosure of the present invention so that the technical disclosure of the present invention will be more clearly understood and appreciated by those skilled in the art how to implement the present invention. The present invention may, however, be embodied in many different forms of embodiment, and the scope of the present invention should not be construed as limited to the embodiment set forth herein, but rather construed as being limited only by the following description of the embodiment.
The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc., are only directions in the drawings, and are used for explaining and explaining the present invention, but not for limiting the scope of the present invention.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for convenience of understanding and description, and the present invention is not limited to the size and thickness of each component.
When certain components are described as being "on" another component, the component can be directly on the other component; there may also be an intermediate component disposed on the intermediate component and the intermediate component disposed on another component. When an element is referred to as being "mounted to" or "connected to" another element, they are directly "mounted to" or "connected to" the other element or "mounted to" or "connected to" the other element through an intermediate element.
As shown in fig. 2, the present embodiment provides a method for manufacturing a display panel, which includes steps S1 to S9.
S1 sacrificial layer preparation, sputtering a layer of metal on the upper surface of a hard substrate, the deposited layer being a sacrificial layer, the metal including tungsten, etc. for mechanical peeling from the subsequent inorganic layer.
S2 inorganic layer preparation, namely depositing an inorganic layer on the upper surface of the sacrificial layer by adopting a physical vapor deposition method, wherein the inorganic layer is made of transparent material, the transparency of the inorganic layer is 95% -100%, and light can be ensured to pass through the inorganic layer without barrier and to be emitted to the position of the camera under the screen. The inorganic layer preparing step includes a first inorganic layer preparing step of depositing a layer of a metal oxide material, which may be an oxide of tungsten, on the upper surface of the sacrificial layer to form a first inorganic layer 31, and a second inorganic layer preparing step of using the first inorganic layer 31 as a mechanical separation layer to be peeled off from the sacrificial layer. In the second inorganic layer preparation step, a layer of silicon oxide material is deposited on the upper surface of the first inorganic layer to form the second inorganic layer 32, and the second inorganic layer 32 has good adhesion, so that adhesion with other film layers can be ensured, and a falling-off phenomenon can be prevented (see fig. 3). In other embodiments, the inorganic layer preparing step may further include a third inorganic layer preparing step, depositing a layer of silicon nitride or silicon oxynitride material on the upper surface of the second inorganic layer 32 to form a third inorganic layer 33 (see fig. 4), where the third inorganic layer 33 has a good function of blocking external water and oxygen, and thus ensures normal use of the layers inside the display panel.
S3 step of preparing a flexible substrate layer, preparing a flexible substrate layer 4 (see fig. 5) on the upper surface of the inorganic layer 3, wherein the thickness of the flexible substrate layer 4 is 6 μm to 10 μm, the flexible substrate layer 4 is made of Polyimide (PI), and the flexible substrate layer 4 plays a role of supporting a substrate.
S4, patterning the flexible substrate layer 4 by silk screen printing or the like to form the second through holes 41 (see fig. 5).
S5 thin film transistor layer preparing step, preparing a thin film transistor layer 5 on the upper surface of the flexible substrate layer 4, exposing the thin film transistor layer 5 with a mask to form a third through hole 51 (see fig. 6), where the third through hole 51 is opposite to the second through hole.
And S6, preparing a light emitting layer 6 on the upper surface of the thin film transistor layer 5 in a thermal evaporation mode, wherein the light emitting layer preparation step comprises an evaporation step and an etching step. In the luminescent layer preparation step, a layer of luminescent material is evaporated on the upper surface of the thin-film transistor layer 5, the bottom of the second through hole and the inner side wall thereof to form a luminescent layer 6 (see fig. 7). In the etching step, the bottom of the second through hole and the light-emitting layer on the inner side wall thereof are etched by laser in a nitrogen atmosphere, and a fourth through hole 61 is formed on the light-emitting layer 6 (see fig. 8).
In this embodiment, the second through-hole, the third through-hole reaches the internal diameter of fourth through-hole is the same for luminous layer 6 is close to the edge of fourth through-hole can accomplish to be close to with thin film transistor layer 5 the edge of third through-hole coincides mutually, has increased luminous layer 6's area, has increased the area in display area simultaneously, further improves display device's screen and accounts for the ratio, is used for satisfying the requirement of current customer to comprehensive screen.
S7 step of preparing a package layer, which is to prepare a package layer 7 (see fig. 9), where the package layer 7 covers the upper surfaces and the side surfaces of the light-emitting layer 6 and the thin-film transistor layer 5, and is filled in the second through hole, the third through hole, and the fourth through hole. The packaging layer 7 is a transparent layer, the light transmittance of the packaging layer is higher than 95%, no extra packaging space needs to be reserved at the boundary of the second through hole, the second through hole can be completely packaged, the effect of isolating water and oxygen is achieved, and the display panel can be protected.
The preparation steps of the packaging layer comprise a first packaging layer preparation step, a second packaging layer preparation step and a third packaging layer preparation step. In the first encapsulation layer preparation step, a first encapsulation layer 71 (see fig. 9) is prepared on the upper surfaces and the side surfaces of the light-emitting layer 6 and the thin film transistor layer 5, and the bottom and the inner side walls of the second through hole by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The first packaging layer 71 is made of inorganic material, including silicon nitride (SiN)x) Silicon oxynitride (SiON)x) Or oxides of Silicon (SiO)x) And the like inorganic transparent materials.
In the second encapsulating layer preparing step, the second encapsulating layer 72 is prepared on the upper surface of the first encapsulating layer 71 and in the second through-hole by an ink jet printing method (IJP) (see fig. 9). The second encapsulation layer 72 is made of an acrylic or epoxy organic material, and has good fluidity during ink-jet printing, so that the second encapsulation layer 72 can be filled in the second through hole, the third through hole and the fourth through hole, and the thickness of the cured second encapsulation layer 72 is 8-10 μm.
In the third encapsulating layer preparing step, a Plasma Enhanced Chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Va) is employedThe por position), a third encapsulating layer 73 is prepared on the upper surface and the side surface of the second encapsulating layer 72 and the first encapsulating layer 71 (see fig. 9). The third encapsulating layer 73 is made of an inorganic material including silicon nitride (SiN)x) Silicon oxynitride (SiON)x) Or oxides of Silicon (SiO)x) And the like inorganic transparent materials.
And S8, a stripping step, wherein the sacrificial layer and the first inorganic layer are separated by adopting a mechanical stripping mode, so that the sacrificial layer and the hard substrate are stripped and the inorganic layer is remained.
S9 a step of attaching a back sheet, in which a back sheet 8 is attached to the lower surface of the inorganic layer 3, and the back sheet 8 is provided with a first through hole 81, and the first through hole 81 and the second through hole are disposed opposite to each other (see fig. 10).
The manufacturing method of the display panel has the technical effects that the inner diameters of the second through hole, the third through hole and the fourth through hole are the same, so that the luminescent layer and the thin film transistor layer are aligned at the edge of the through hole, the area of a display area is increased, the screen occupation ratio of the display device is improved, and the requirements of current customers on a comprehensive screen are met. After the inorganic layer is added, the packaging layer can be filled in the second through hole to completely package the second through hole, and the packaging effect is ensured.
As shown in fig. 10, the present embodiment further provides a display panel, which includes an inorganic layer 3, a flexible substrate layer 4, a thin-film transistor layer 5, a light-emitting layer 6, an encapsulation layer 7, and a back plate 8.
As shown in fig. 3 and 4, the inorganic layer 3 may have two structures, the inorganic layer 3 is a transparent inorganic layer having a light transmittance of 95% to 100%, the inorganic layer 3 is disposed on the upper surface of the back plate 8, and the inorganic layer 3 is made of a thin film of metal oxide, silicon nitride, silicon oxide, or the like. The inorganic layer 3 plays a role of supporting the substrate to support the subsequent packaging layer 7, and the technical problem of packaging failure at the edge of the packaging layer 7 is avoided.
As shown in fig. 3, the inorganic layer 3 includes a first inorganic layer 31 and a second inorganic layer 32, the first inorganic layer 31 is a mechanical separation layer, the first inorganic layer 31 is disposed on the upper surface of the backplate 8, and the material of the first inorganic layer 31 can be selected from metal oxide, such as tungsten, for mechanical peeling from the sacrificial layer 2. The second inorganic layer 32 is disposed on the upper surface of the first inorganic layer 31, and the second inorganic layer 32 is made of silicon oxide, which acts as a binder and ensures good adhesion between the inorganic layer 3 and other film layers.
As shown in fig. 4, in another embodiment, the inorganic layer 3 may be a three-layer structure, the inorganic layer 3 includes a first inorganic layer 31, a second inorganic layer 32 and a third inorganic layer 33, the first inorganic layer 31 is a mechanical separation layer, the first inorganic layer 31 is disposed on the upper surface of the backplate 8, and the material of the first inorganic layer 31 may be a metal oxide for mechanical peeling from the sacrificial layer 2. The second inorganic layer 32 is disposed on the upper surface of the first inorganic layer 31, and the second inorganic layer 32 is made of silicon oxide, which acts as a binder and ensures good adhesion between the inorganic layer 3 and other film layers. The third inorganic layer 33 is disposed on the upper surface of the second inorganic layer 32, and is made of silicon oxide or silicon nitride to isolate water and oxygen and prevent water and oxygen from entering the display panel.
The flexible base layer 4 is arranged on the upper surface of the inorganic layer 3, the flexible base layer 4 is provided with a second through hole, the thickness of the flexible base layer 4 is 6-10 microns, the flexible base layer 4 is made of Polyimide (PI), and the flexible base layer 4 plays a role of supporting a substrate.
The thin film transistor layer 5 is arranged on the upper surface of the flexible substrate layer 4, a third through hole is formed in the thin film transistor layer 5, and the third through hole and the second through hole are arranged oppositely. The thin-film transistor layer 5 functions as a control circuit and controls the circuit switches of the display panel.
The luminescent layer 6 is arranged on the upper surface of the thin film transistor layer 5 and plays a role of luminescent display. Be equipped with the fourth through-hole on luminescent layer 6, the fourth through-hole with the third through-hole sets up relatively, just the second through-hole the third through-hole reaches the internal diameter of fourth through-hole is the same, makes luminescent layer 6 at fourth through-hole edge with thin film transistor layer 5 at fourth through-hole edge is in same vertical direction, makes luminescent layer 6 at fourth through-hole edge need not to reserve certain width, has increased luminescent layer 6's area, increases the area of display area promptly, further improves display device's the screen and accounts for the ratio.
The packaging layer 7 is arranged on the upper surface and the side surface of the light-emitting layer 6 and the thin film transistor layer 5, and is filled in the second through hole, the third through hole and the fourth through hole, so that the second through hole, the third through hole and the fourth through hole are completely packaged, the effect of isolating water and oxygen is achieved, and the display panel can be protected.
The encapsulation layer 7 includes a first encapsulation layer 71, a second encapsulation layer 72, and a third encapsulation layer 73. The first packaging layer 71 is disposed on the upper surface and the side surface of the light-emitting layer 6 and the thin film transistor layer 5, and the bottom and the inner sidewall of the second through hole, and the first packaging layer 71 is made of inorganic material including silicon nitride (SiN)x) Silicon oxynitride (SiON)x) Or oxides of Silicon (SiO)x) And the like inorganic transparent materials. The second encapsulation layer 72 is disposed on the upper surface of the first encapsulation layer 71 and in the second through hole, the material of the second encapsulation layer 72 includes an acrylic or epoxy organic material, and has good fluidity during ink-jet printing, so that the second encapsulation layer can be filled in the second through hole, the third through hole and the fourth through hole, and the thickness of the cured second encapsulation layer 72 is 8 μm to 10 μm. The third encapsulating layer 73 is disposed on the upper surface and the side surface of the second encapsulating layer 72 and the first encapsulating layer 71, and the third encapsulating layer 73 is made of an inorganic material including silicon nitride (SiN)x) Silicon oxynitride (SiON)x) Or oxides of Silicon (SiO)x) And the like inorganic transparent materials.
The backboard 8 is arranged on the lower surface of the inorganic layer 3, so that the damage of friction, collision and the like caused by the outside to the display panel can be prevented, and the effect of protecting the display panel is achieved. The backboard 8 is provided with a first through hole, and the first through hole and the second through hole are oppositely arranged, so that light can pass through the first through hole to reach the camera under the screen, and the camera shooting function under the screen is realized.
This embodiment display panel technical effect lies in, and the internal diameter of second through-hole, third through-hole is the same with the fourth through-hole for luminescent layer aligns with thin film transistor layer in through-hole edge, and the area of increase display area improves display device's screen and accounts for the ratio, satisfies current customer's requirement to comprehensive screen. After the inorganic layer is added, the packaging layer can be filled in the second through hole to completely package the second through hole, and the packaging effect is ensured.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A display panel, comprising:
the back plate is provided with a first through hole;
the inorganic layer is arranged on the surface of one side of the back plate;
the flexible substrate layer is arranged on the surface of one side, away from the backboard, of the inorganic layer, and is provided with a second through hole which is opposite to the first through hole;
the thin film transistor layer is arranged on the surface of one side, away from the inorganic layer, of the flexible substrate layer, and is provided with a third through hole which is opposite to the second through hole;
the light-emitting layer is arranged on the surface of one side, away from the flexible substrate layer, of the thin film transistor layer, and is provided with a fourth through hole which is opposite to the third through hole; and
and the packaging layer is arranged on the surface of one side, away from the thin film transistor layer, of the light-emitting layer and is filled into the second through hole, the third through hole and the fourth through hole.
2. The display panel of claim 1,
the inner diameters of the first through hole, the second through hole, the third through hole and the fourth through hole are the same.
3. The display panel of claim 1,
the light transmittance of the inorganic layer is 95-100%.
4. The display panel of claim 1,
the inorganic layer includes:
the first inorganic layer is arranged on the surface of one side of the back plate; and
and the second inorganic layer is arranged on the surface of the first inorganic layer far away from one side of the back plate.
5. The display panel of claim 4,
the inorganic layer further includes:
and the third inorganic layer is arranged on the surface of one side of the second inorganic layer, which is far away from the first inorganic layer.
6. The display panel of claim 1,
the encapsulation layer includes:
the first packaging layer is coated on the surfaces and the side faces of the luminescent layer and the side faces of the thin film transistor far away from the flexible substrate layer and attached to the bottom and the inner side wall of the second through hole;
the second packaging layer is arranged on the surface of one side, away from the light-emitting layer, of the first packaging layer and is filled in the second through hole; and
and the third packaging layer is coated on the surfaces of the second packaging layer and the first packaging layer, which are far away from one side of the flexible substrate layer.
7. A preparation method of a display panel is characterized by comprising the following steps:
a sacrificial layer preparation step, namely preparing a sacrificial layer on the upper surface of a hard substrate;
preparing an inorganic layer on the upper surface of the sacrificial layer;
preparing a flexible substrate layer on the upper surface of the inorganic layer;
a patterning step, wherein the flexible substrate layer is subjected to patterning to form a second through hole;
preparing a thin film transistor layer, namely preparing the thin film transistor layer on the upper surface of the flexible substrate layer, wherein the thin film transistor layer forms a third through hole and is arranged opposite to the second through hole;
preparing a luminescent layer on the upper surface of the thin film transistor layer, wherein the luminescent layer forms a fourth through hole and is arranged opposite to the third through hole;
preparing a packaging layer, coating the upper surfaces and the side surfaces of the light-emitting layer and the thin film transistor layer, and filling the packaging layer into the second through hole, the third through hole and the fourth through hole;
a peeling step of peeling the hard substrate and the sacrificial layer; and
and a back plate attaching step of attaching a back plate to the lower surface of the inorganic layer, wherein the back plate is provided with a first through hole which is opposite to the second through hole.
8. The method for manufacturing a display panel according to claim 7,
the preparation method of the inorganic layer comprises the following steps:
a first inorganic layer preparing step of preparing a first inorganic layer on an upper surface of the sacrificial layer;
a second inorganic layer preparing step of preparing a second inorganic layer on the upper surface of the first inorganic layer.
9. The method for manufacturing a display panel according to claim 8,
the preparation step of the inorganic layer further comprises
And a third inorganic layer preparation step of preparing a third inorganic layer on the upper surface of the second inorganic layer.
10. The method for manufacturing a display panel according to claim 7,
the preparation step of the light emitting layer comprises the following steps:
evaporating a light emitting layer on the upper surface of the thin film transistor layer, the bottom of the third through hole and the inner side wall; and
and etching, namely removing the bottom of the second through hole and the light emitting layer on the inner side wall after etching treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911030303.7A CN110729335B (en) | 2019-10-28 | 2019-10-28 | Display panel and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911030303.7A CN110729335B (en) | 2019-10-28 | 2019-10-28 | Display panel and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN110729335A true CN110729335A (en) | 2020-01-24 |
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