CN110729269A - Semiconductor structure and forming method thereof - Google Patents
Semiconductor structure and forming method thereof Download PDFInfo
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- CN110729269A CN110729269A CN201810786440.2A CN201810786440A CN110729269A CN 110729269 A CN110729269 A CN 110729269A CN 201810786440 A CN201810786440 A CN 201810786440A CN 110729269 A CN110729269 A CN 110729269A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 100
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 76
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 76
- 239000011368 organic material Substances 0.000 claims abstract description 70
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- ICXAPFWGVRTEKV-UHFFFAOYSA-N 2-[4-(1,3-benzoxazol-2-yl)phenyl]-1,3-benzoxazole Chemical compound C1=CC=C2OC(C3=CC=C(C=C3)C=3OC4=CC=CC=C4N=3)=NC2=C1 ICXAPFWGVRTEKV-UHFFFAOYSA-N 0.000 claims description 5
- 239000005751 Copper oxide Substances 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 231
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a semiconductor structure and a forming method thereof. After the metal layer is formed, a metal oxide layer is formed on the metal layer, so that a subsequently formed organic material layer is formed on the metal oxide layer, and carbon and hydrogen in the organic material layer can form chemical bonds with oxygen in the metal oxide layer, so that the bonding force between the organic material layer and the metal oxide layer can be effectively improved, namely, the adhesion performance of the organic material layer on the metal layer is improved, and the problem of falling-off of the organic material layer can be further improved.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a semiconductor structure and a method for forming the same.
Background
In the semiconductor field, there are a large number of such semiconductor structures including a metal layer and an organic material layer formed on the metal layer. For example, in a semiconductor package structure, a metal layer is used to form a redistribution layer, and an organic material layer is required to be formed on the redistribution layer to form a passivation layer, so that the redistribution layer can be isolated and protected by the passivation layer.
However, in the actual process of manufacturing the semiconductor structure, due to poor bonding performance between the metal layer and the organic material layer, the organic material layer covering the metal layer is likely to be peeled off (peeling), which may adversely affect the performance of the semiconductor structure.
Disclosure of Invention
The invention aims to provide a method for forming a semiconductor structure, which aims to solve the problem that an organic material layer is easy to fall off from a metal layer in the formed semiconductor structure.
To solve the above technical problem, the present invention provides a method for forming a semiconductor structure, including:
providing a substrate, wherein a metal layer is formed on the substrate;
forming a metal oxide layer on the metal layer; and the number of the first and second groups,
and forming an organic material layer on the metal oxide layer, wherein a carbon-oxygen bond and/or a hydrogen-oxygen bond are formed between the metal oxide layer and the organic material layer.
Optionally, the method for forming the metal oxide layer includes: and performing an oxidation process on the metal layer to convert a part of the metal layer close to the top surface into the metal oxide layer.
Optionally, the performing an oxidation process on the metal layer includes: and baking the metal layer.
Optionally, in the process of baking the metal layer, the baking temperature is between 150 ℃ and 170 ℃.
Optionally, in the process of baking the metal layer, the baking time is 120s to 180 s.
Optionally, the metal layer includes copper, and the metal oxide layer includes copper oxide.
Optionally, the material of the organic material layer includes poly-p-phenylene benzobisoxazole.
Optionally, the semiconductor structure is a package structure, the metal layer is used to form a redistribution layer in the package structure, the organic material layer is used to form a passivation layer in the package structure, at least one opening is formed in the passivation layer, and the redistribution layer is exposed through the opening.
It is yet another object of the present invention to provide a semiconductor structure, comprising:
a substrate;
a metal layer formed on the substrate;
a metal oxide layer formed on the metal layer; and the number of the first and second groups,
and the organic material layer is formed on the metal oxide layer, and a carbon-oxygen bond and/or a hydrogen-oxygen bond are/is formed between the metal oxide layer and the organic material layer.
Optionally, the metal oxide layer is formed by combining oxygen and a portion of the metal layer near the top surface.
Optionally, the metal layer includes copper, and the metal oxide layer includes copper oxide.
Optionally, the material of the organic material layer includes poly-p-phenylene benzobisoxazole.
Optionally, the semiconductor structure is a package structure, the metal layer is used to form a redistribution layer in the package structure, the organic material layer is used to form a passivation layer in the package structure, at least one opening is formed in the passivation layer, and the redistribution layer is exposed through the opening.
In the method for forming the semiconductor structure, after the metal layer is formed and before the organic material layer is formed, the metal oxide layer is directly formed on the metal layer, so that the organic material layer formed subsequently can be formed on the metal oxide layer, and carbon and hydrogen in the organic material layer can form chemical bonds with oxygen in the metal oxide layer, so that the bonding force between the organic material layer and the metal oxide layer can be effectively improved. Namely, the metal oxide layer is used as the middle bonding layer, and the metal oxide layer and the metal layer and the organic material layer have stronger bonding force, so that the adhesive force of the organic material layer on the metal layer can be enhanced, and the problem that the organic material layer falls off is avoided.
Further, the metal layer may be oxidized to convert a portion of the metal layer near a top surface thereof into the metal oxide layer. Therefore, the process can be simplified, the overlarge total thickness of the oxide layer and the metal oxide layer can be avoided, the binding force between the metal layer and the metal oxide layer can be further ensured, and the adhesion performance of the organic material layer on the metal layer can be further improved.
Drawings
FIG. 1 is a flow chart illustrating a method of forming a semiconductor structure according to an embodiment of the present invention;
fig. 2a to fig. 2c are schematic structural diagrams of a semiconductor structure in a manufacturing process thereof according to an embodiment of the invention.
Wherein the reference numbers are as follows:
100-a substrate;
200-a metal layer;
200' -a metal oxide layer;
300-a layer of organic material;
300 a-opening.
Detailed Description
The semiconductor structure and the method for forming the same according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 1 is a schematic flow chart of a method for forming a semiconductor structure according to an embodiment of the present invention, and fig. 2a to 2c are schematic structural diagrams of the semiconductor structure according to an embodiment of the present invention during a manufacturing process thereof. The forming method in the present embodiment will be described in detail below with reference to the drawings.
First, step S100 is executed, and referring to fig. 2a in particular, a substrate 100 is provided, and a metal layer 200 is formed on the substrate 100. Further, the material of the metal layer 200 includes, for example, copper (Cu).
It should be noted that other elements may be formed in the substrate 100 according to the actual semiconductor structure. Specifically, in the present embodiment, the semiconductor structure is a package structure, and other elements such as transistors and metal interconnects may be formed in the substrate 100. The package structure is, for example, a bump package structure (bump package), and the metal layer 200 is used to form a redistribution layer (RDL) of the package structure.
Next, step S200 is executed, and referring to fig. 2b in particular, a metal oxide layer 200' is directly formed on the metal layer 200. By forming the metal oxide layer 200 ', a subsequently formed organic material layer is formed on the metal oxide layer 200 ', thereby improving the bonding force between the organic material layer and the metal oxide layer 200 '. In this embodiment, the material of the metal layer 200 includes copper, and thus the material of the formed metal oxide layer 200' may include copper oxide.
In a preferred embodiment, after the metal layer 200 is formed, an oxidation process may be directly performed on the metal layer 200 to convert a portion of the metal layer 200 close to the top surface into the metal oxide layer 200'. Therefore, the process is simple; and can avoid the over-large total thickness of the metal layer and the metal oxide layer; meanwhile, part of the metal layer is directly converted into the metal oxide layer, that is, the metal layer 200 and the metal oxide layer 200 'substantially belong to the same film layer, and no separation interface exists between the two (or it can be understood that no film layer interface exists between different film layers), so that the metal layer 200 and the metal oxide layer 200' have better bonding force.
Wherein, performing an oxidation process on the metal layer 200 includes, for example: and baking the metal layer 200. Specifically, the metal layer 200 is placed in an oxygen-containing atmosphere, and a baking process is performed, so that a portion of the metal layer 200 near the top surface thereof is oxidized to be converted into the metal oxide layer 200'. It is understood that, during the oxidation process, a portion of the metal layer 200 near the top surface forms a chemical bond (e.g., a covalent bond) with oxygen to constitute the metal oxide layer 200'.
It should be noted that, in fig. 2b and 2c, there is a distinct separation interface between the metal layer 200 and the metal oxide layer 200 ', which is to clearly indicate the position relationship between the metal layer 200 and the metal oxide layer 200'.
Specifically, in the process of baking the metal layer 200, the baking temperature and the baking time can be adjusted according to different requirements. For example, in the embodiment, the baking temperature of the metal layer 200 may be between 150 ℃ and 170 ℃; and the baking time is, for example, 120s to 180 s.
Further, during the oxidation process, all exposed top surfaces of the metal layer 200 can be combined with oxygen to be transformed into the metal oxide layer 200'. And, the portion of the metal layer 200 near the top surface thereof may be considered as a portion extending from the top surface of the metal layer toward the substrate by a predetermined distance.
Next, step S300 is performed, and referring to fig. 2C in particular, an organic material layer 300 is formed on the metal oxide layer 200 ', and a carbon-oxygen bond (-C ═ O) and/or a hydrogen-oxygen bond (-OH) are formed between the metal oxide layer 200' and the organic material layer 300. Since oxygen (O) in the metal oxide layer 200 'can form chemical bonds (i.e., carbon-oxygen bonds (-C ═ O) and hydrogen-oxygen bonds (-OH)) with carbon (C) and/or hydrogen (H) in the organic material layer 300, a strong bonding force can be provided between the organic material layer 300 and the metal oxide layer 200'.
It is believed that the metal oxide layer 200' serves as an intermediate adhesive layer, and has better bonding force with both the metal layer 200 and the organic material layer 300, so that the adhesion of the organic material layer 300 on the metal layer 200 can be effectively improved. In addition, in the embodiment, the metal oxide layer 200 'is formed by converting a portion of the metal layer 200 close to the top surface thereof, so as to further ensure the bonding force between the metal layer 200 and the metal oxide layer 200', further enhance the adhesion of the organic material layer 300 on the metal layer 200, and thus improve the problem of the organic material layer 300 falling off.
Further, in this embodiment, the semiconductor structure is an encapsulation structure, and the organic material layer 300 is used to form a passivation layer to isolate and protect a redistribution layer formed by the metal layer 200. Furthermore, at least one opening 300a is further formed in the organic material layer 300 (i.e., the passivation layer) to expose the redistribution layer through the opening 300a, and a bump may be formed in the opening 300a in a subsequent process.
The preparation method of the organic material layer 300 having the opening 300a includes: firstly, depositing an organic film on the substrate 100, wherein the organic film covers the metal oxide layer 200'; next, a photolithography process and a development process are performed to form an opening 300a in the organic thin film to constitute the organic material layer 300.
It can be seen that, in the process of preparing the organic material layer 300, a developing process using a developing solution is required after depositing the organic thin film, and therefore, when the adhesion between the organic thin film and the metal layer is poor, the organic thin film is easily peeled off from the metal layer, which is equivalent to the finally formed organic material layer being peeled off from the metal layer. Therefore, in the present invention, the part of the top surface of the metal layer 200 is converted into the metal oxide layer 200' to improve the adhesion strength of the organic thin film/organic material layer 300 on the metal layer 200, thereby effectively reducing the probability of the finally formed organic material layer 300 falling off.
Specifically, the organic material layer 300 may include poly-p-Phenylene Benzobisoxazole (PBO), and the PBO has better mechanical tensile strength, breaking strength, and the like, so that the formation of the passivation layer by using the PBO can perform better isolation protection on the metal layer or other elements below the passivation layer.
Based on the above-mentioned method for forming a semiconductor structure, the present invention further provides a semiconductor structure, for example, as shown in fig. 2c, the semiconductor structure includes:
a substrate 100;
a metal layer 200 formed on the substrate 100;
a metal oxide layer 200' formed on the metal layer 200; and the number of the first and second groups,
and an organic material layer 300 formed on the metal oxide layer 200 ', wherein a carbon-oxygen bond (-C ═ O) and/or a hydrogen-oxygen bond (-OH) are formed between the metal oxide layer 200' and the organic material layer 300.
That is, since a chemical bond can be formed between the organic material layer 300 and the metal oxide layer 200 ', the bonding force between the organic material layer 300 and the metal oxide layer 200' can be effectively improved, that is, the adhesion strength of the organic material layer 300 on the metal layer 200 is improved, and the organic material layer 300 is prevented from falling off.
In a preferred embodiment, the metal oxide layer 200' is formed by bonding (e.g., forming a chemical bond) oxygen to a portion of the metal layer 200 near the top surface. In this case, the metal oxide layer 200 'and the metal layer 200 are substantially the same layer, and no separation interface exists between the two (or the bonding force between the metal oxide layer 200' and the metal layer 200 is considered to be strong). Thereby, the adhesion of the organic material layer 300 on the metal layer 200 may be further improved, and the probability of the organic material layer 300 falling off may be further reduced.
Further, the material of the metal layer 200 includes, for example, copper (Cu), and the material of the metal oxide layer 200' may correspondingly include copper oxide (CuO). The organic material layer is made of poly-p-Phenylene Benzobisoxazole (PBO).
In this embodiment, the semiconductor structure is a package structure. The metal layer 200 may be used to form a redistribution layer (RDL) in the package structure, and the organic material layer 300 may be used to form a passivation layer in the package structure, so as to isolate and protect the redistribution layer by the passivation layer. At least one opening 300a may be further formed in the passivation layer, and the redistribution layer is exposed through the opening 300 a.
In summary, in the method for forming a semiconductor structure provided by the present invention, the metal oxide layer is preferentially formed before the organic material layer is formed, so that after the organic material layer is formed subsequently, a chemical bond can be formed between the organic material layer and the metal oxide layer, thereby effectively improving the bonding force between the organic material layer and the metal oxide layer, and being beneficial to improving the problem of the organic material layer falling off. It is considered that the intermediate adhesive layer is formed with a metal oxide layer to improve the adhesion strength of the organic material layer on the metal layer.
Further, after the metal layer is formed, an oxidation process may be directly performed on the metal layer to convert a portion of the metal layer near the top surface thereof into a metal oxide layer. Therefore, the process is simplified, the excessive thicknesses of the metal layer and the metal oxide layer can be avoided, and meanwhile, the adhesion performance between the metal layer and the metal oxide layer can be ensured.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (13)
1. A method of forming a semiconductor structure, comprising:
providing a substrate, wherein a metal layer is formed on the substrate;
directly forming a metal oxide layer on the metal layer; and the number of the first and second groups,
and forming an organic material layer on the metal oxide layer, wherein a carbon-oxygen bond and/or a hydrogen-oxygen bond are formed between the metal oxide layer and the organic material layer.
2. The method of forming a semiconductor structure of claim 1, wherein the method of forming a metal oxide layer comprises: and performing an oxidation process on the metal layer to convert a part of the metal layer close to the top surface into the metal oxide layer.
3. The method of forming a semiconductor structure of claim 2, wherein performing an oxidation process on the metal layer comprises: and baking the metal layer.
4. The method of claim 3, wherein the baking temperature is between 150 ℃ and 170 ℃ during the baking of the metal layer.
5. The method of claim 3, wherein the baking time is between 120s and 180s during the baking of the metal layer.
6. The method of claim 1, wherein the metal layer comprises copper and the metal oxide layer comprises copper oxide.
7. The method of claim 1, wherein a material of the organic material layer comprises poly-p-phenylene benzobisoxazole.
8. The method of claim 1, wherein the semiconductor structure is an encapsulation structure, the metal layer is used for forming a redistribution layer in the encapsulation structure, the organic material layer is used for forming a passivation layer in the encapsulation structure, and at least one opening is formed in the passivation layer and exposes the redistribution layer.
9. A semiconductor structure, comprising:
a substrate;
a metal layer formed on the substrate;
a metal oxide layer formed on the metal layer; and the number of the first and second groups,
and the organic material layer is formed on the metal oxide layer, and a carbon-oxygen bond and/or a hydrogen-oxygen bond are/is formed between the metal oxide layer and the organic material layer.
10. The semiconductor structure of claim 9, wherein the metal oxide layer is comprised of oxygen bonded to a portion of the metal layer near the top surface.
11. The semiconductor structure of claim 9, wherein the metal layer comprises copper and the metal oxide layer comprises copper oxide.
12. The semiconductor structure of claim 9, wherein the organic material layer comprises pbo.
13. The semiconductor structure of claim 9, wherein the semiconductor structure is an encapsulation structure, the metal layer is configured to form a redistribution layer in the encapsulation structure, and the organic material layer is configured to form a passivation layer in the encapsulation structure, wherein at least one opening is formed in the passivation layer, and the opening exposes the redistribution layer.
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| CN201810786440.2A CN110729269A (en) | 2018-07-17 | 2018-07-17 | Semiconductor structure and forming method thereof |
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| CN201810786440.2A CN110729269A (en) | 2018-07-17 | 2018-07-17 | Semiconductor structure and forming method thereof |
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| CN106847681A (en) * | 2017-03-01 | 2017-06-13 | 厦门大学 | The method that low temperature Si Si are bonded is realized using amorphous germanium thin film |
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2018
- 2018-07-17 CN CN201810786440.2A patent/CN110729269A/en active Pending
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| CN1354496A (en) * | 2000-11-14 | 2002-06-19 | 联华电子股份有限公司 | Method for increasing sticking property of dielectric material of semiconductor |
| CN101305465A (en) * | 2005-11-09 | 2008-11-12 | 株式会社半导体能源研究所 | Semiconductor device and manufacturing method thereof |
| CN101321895A (en) * | 2005-12-06 | 2008-12-10 | 新日本制铁株式会社 | Composite coated metal sheet, treatment agent and method of manufacturing composite coated metal sheet |
| CN101770947A (en) * | 2008-12-30 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Poly(p-phenylene benzobisoxazole) fiber surface-processing method |
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