CN106847681A - The method that low temperature Si Si are bonded is realized using amorphous germanium thin film - Google Patents
The method that low temperature Si Si are bonded is realized using amorphous germanium thin film Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 239000011259 mixed solution Substances 0.000 claims abstract description 34
- 238000007654 immersion Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 10
- 238000011282 treatment Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 4
- 229910008045 Si-Si Inorganic materials 0.000 claims description 31
- 229910006411 Si—Si Inorganic materials 0.000 claims description 31
- 229910017817 a-Ge Inorganic materials 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 20
- 238000010030 laminating Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims 2
- 238000009835 boiling Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000010148 water-pollination Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The method that low temperature Si Si are bonded is realized using amorphous germanium thin film, is related to Si method of wafer bonding.Selection crystal orientation is the Si base materials of (100), cleaning；First use H2SO4And H2O2Mixed solution boil, then with HF and H2O2Mixed solution immersion；Through the Si pieces after treatment, NH is first used4OH、H2O2And H2The mixed solution of O boils, then with HF and H2O2Mixed solution immersion；Through the Si pieces after treatment, first with HCL, H2O2And H2The mixed solution of O boils, then with HF and H2O2Mixed solution immersion；DC magnetron sputtering system is put into after being dried through the Si pieces after treatment, room background vacuum to be sputtered is less than 1 × 10‑4Pa, Ar gases are filled with to sputtering chamber；A Ge films are sputtered by adjusting d.c. sputtering electric current and sample carrier rotating speed；Realize that high intensity Si Si are bonded using hydrophilic a Ge layers.
Description
Technical field
The present invention relates to Si method of wafer bonding, realize what low temperature Si-Si bond was closed more particularly, to using amorphous germanium thin film
Method.
Background technology
Si-Si Direct Bondings are increasingly concerned as a basic technology of microelectronic.Si-Si Direct Bondings are
The Si pieces that two panels eyeglass is polished realize crystalline substance by means such as surface clean, activation process, room temperature laminating and high-temperature heat treatments
Technology ([1] Howlader M M R, Wang J G, Kim M J.Influence of nitrogen of piece integration
microwave radicals on sequential plasma activated bonding[J].Materials
Letters,2010,64(3):445-448；[2]Toyoda E,Sakai A,Isogai H,et al.Mechanical
Properties and Chemical Reactions at the Directly Bonded Si–Si Interface[J]
.Japanese Journal of Applied Physics,2009,48(1R):011202.), although bonding techniques starting compared with
Evening, but develop extremely rapid, its principle, method and experimental facilities are fairly simple, and by the structure of bonding material, crystal orientation,
The influence of lattice parameter.Relative to these conventional epitaxial growth methods such as CVD and MBE, bonding techniques have the superior of its uniqueness
Property simultaneously has been widely used for SOI, MEMS and some piezoelectricity, acousto-optic, and the preparation of photoelectric device will have boundless in future
Application prospect ([3] Bruel M, Aspar B, Auberton-Herve A J.Smart-Cut:a new silicon on
insulator material technology based on hydrogen implantation and wafer
bonding[J].Japanese journal of applied physics,1997,36(3S):1636；[4]Lasky J
B.Wafer bonding for silicon‐on‐insulator technologies[J].Applied Physics
Letters,1986,48(1):78-80.)。
Although directly hydrophilic bonding can be fitted Si-Si by van der waals force at room temperature, but be realized
The bonding of high intensity then needs 800-1000 DEG C of post annealed to realize ([5] Toyoda E, Sakai A, Isogai H, et
al.Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si
Interface[J].Japanese Journal of Applied Physics,2009,48(1R):011202) it is, and so high
Annealing temperature obviously cannot meet large-scale circuit preparation demand, therefore how to realize low temperature Si-Si bond close (≤400 DEG C)
Gradually paid close attention to by people.Having document report can realize that the hydrophobic Si-Si bond of low temperature is closed using a-Si intermediate layers, yet with
A-Si does not have hydrophily, therefore ([6] Tong Q Y, Gan Q, Hudson G, et can only be realized by hydrophobic bonding
al.Low-temperature hydrophobic silicon wafer bonding[J].Applied physics
letters,2003,83(23):4767-4769).It is well known that because the adhesion of hydrogen bond is lower than the adhesion of hydrogen-oxygen key, because
This hydrophobic bonding is relatively difficult to realize for hydrophilic bonding.On the other hand, because the crystallization temperature of a-Si is higher,
Bonding can not make its crystallization at low temperature, rather than crystal boundary face presence by the performance of serious influence opto-electronic device, therefore
Realizing that low temperature high-quality Si-Si bond is closed then needs a kind of Si surface hydrophilicities that can strengthen to realize low temperature crystallized centre again
Layer material.
The content of the invention
Cannot meet large scale integrated circuit demand and utilization it is an object of the invention to be directed to high temperature Si-Si Direct Bondings
A-Si intermediate layers low-temperature bonding interface cannot crystallization problem, there is provided realize the method that low temperature Si-Si bond is closed using amorphous germanium thin film.
The present invention is comprised the following steps：
1) acquisition of smooth a-Ge films, specific method is as follows：
(1) selection crystal orientation is the Si base materials of (100), and cleaning removes the organic matter of substrate surface；
(2) by the Si pieces after cleaning, H is first used2SO4And H2O2Mixed solution boil, then with HF and H2O2Mixed solution
Immersion；
(3) through step 2) treatment after Si pieces, first use NH4OH、H2O2And H2The mixed solution of O boils, then with HF and H2O2
Mixed solution immersion；
(4) through step 3) treatment after Si pieces, first with HCL, H2O2And H2The mixed solution of O boils, then with HF and H2O2's
Mixed solution soaks；
(5) through step 4) treatment after Si pieces dry after be put into DC magnetron sputtering system, room background vacuum to be sputtered
Less than 1 × 10-4Pa, to Ar gases are filled with sputtering chamber, makes its pressure be 0.3Pa；
(6) a-Ge films are sputtered by adjusting d.c. sputtering electric current and sample carrier rotating speed；
In step 1) in (1st) part, the cleaning can successively be cleaned by ultrasonic 10min respectively using acetone and ethanol.
In step 1) in (2nd) part, the H2SO4And H2O2Mixed solution in, H2SO4With H2O2Volume ratio can be
4 ︰ 1, the time boiled can be 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio can be 1 ︰ 20,
The time of the immersion can be 2min.
In step 1) in (3rd) part, the H4OH、H2O2And H2In the mixed solution of O, NH4OH、H2O2And H2The volume of O
Than that can be the ︰ 4 of 1 ︰ 1, the time boiled can be 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio
Can be 1 ︰ 20, the time of the immersion can be 2min.
In step 1) in (4th) part, described HCL, H2O2And H2In the mixed solution of O, HCL, H2O2And H2The volume ratio of O
Can be the ︰ 4 of 1 ︰ 1, the time boiled can be 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio can
It is 1 ︰ 20, the time of the immersion can be 2min.
In step 1) in (5th) part, the drying can be dried using spin coater；It is 5N that the Ar gases can use purity
Ar gases.
2) realize that high intensity Si-Si bond is closed using hydrophilic a-Ge layers, specific method is as follows：
(1) the Si pieces that will grow a-Ge layers are immersed in water, realize the absorption of Si piece surface hydroxyls；
(2) the Si pieces for soaking step (1) are directly fitted after drying；
(3) the laminating Si pieces annealing for obtaining step (2), that is, realize that low temperature Si-Si bond is closed.
In step 2) in (1st) part, it is described to be immersed in water, 5min in deionized water can be soaked.
In step 2) in (2nd) part, the drying can be dried using spin coater.
In step 2) in (3rd) part, can be put into the laminating Si pieces that step (2) is obtained in annealing furnace and carry out by the annealing
Two step process annealings, the condition of first step process annealing is 350 DEG C of annealing 10h；The condition of second step process annealing is 400 DEG C and moves back
Fiery 10h.
Experiment shows that a-Ge layers of magnetically controlled DC sputtering has extraordinary hydrophilic during para-linkage intermediate layer
Property, while a-Ge crystallization temperatures are relatively low (400 DEG C), therefore low-temperature high-strength Si-Si is realized as intermediate layer using a-Ge layers
Bonding.One layer of a-Ge intermediate layer, the hydrophily on enhancing Si surfaces will be grown after Si wafer cleanings, and realize a-Ge at low temperature
The crystallization in intermediate layer.
It is of the invention creatively to propose to realize that high intensity Si-Si bond closes method using a-Ge layers, can not only avoid high temperature
The bonding problem incompatible with traditional large scale integrated circuit, and can at low temperature realize the crystallization of bonded interface.The present invention
Prepare a-Ge films using magnetron sputtering technique to realize that high intensity Si-Si bond is closed, this is a kind of simple and inexpensive material
Material novel preparation method.
Brief description of the drawings
Fig. 1 is embodiment of the present invention gained sample AFM testing result figures；
Fig. 2 is embodiment of the present invention gained sample SEM testing result figures；
Fig. 3 is embodiment of the present invention gained sample pull force calculation result figure；
Fig. 4 is embodiment of the present invention gained sample Raman detection result figure.
Specific embodiment
Following examples will the present invention is further illustrated with reference to accompanying drawing.
Device therefor is TRP-450 laminated film sputtering depositing systems, grows two direct current target position of indoor placement device and one
Radio frequency target position.Target used is high-purity Ge circular targets of 5N (more than 99.999%).Si backing material crystal orientation used is
(100) N-type single crystalline Si piece, single-sided polishing, resistivity is 1~5 Ω m.
The treatment of 1.Si base materials, specific method is as follows：
1) selection crystal orientation is the Si base materials of (100), and 10min is cleaned by ultrasonic successively respectively with acetone and ethanol, is removed
The organic matter of substrate surface.
2) the Si pieces after organic ultrasonic is cleaned, first use H2SO4︰ H2O2The mixed solution of=4 ︰ 1 boils 10min, then uses
HF ︰ H2O2The mixed solution immersion 2min of=1 ︰ 20；
3) through the Si pieces after above-mentioned 2) step process, NH is first used4OH ︰ H2O2︰ H2The mixed solution of the ︰ 4 of O=1 ︰ 1 boils
10min, then with HF ︰ H2O2The mixed solution immersion 2min of=1 ︰ 20；
4) through the Si pieces after above-mentioned 3) step process, first with HCL ︰ H2O2︰ H2Boiled in the mixed solution of the ︰ 4 of O=1 ︰ 1
10min, then with HF ︰ H2O2The mixed solution immersion 2min of=1 ︰ 20；
2. realize that high intensity Si-Si bond is closed using hydrophilic a-Ge layers, specific method is as follows：
1) laminated film sputtering depositing system, room to be sputtered will be put into after the Si pieces spin coater of standard cleaning is dried
Background vacuum is less than 1 × 10-4Pa, to the Ar gases that purity is 5N are filled with sputtering chamber, makes its pressure be maintained at 0.3Pa, and
Open DC sputtering power；
2) at room temperature, regulation dc source electric current is 0.05A, and voltage is 388V, and sample carrier rotating speed is 10rpm/min,
Sputtering thickness is a-Ge layers of 50nm on a si substrate, and sedimentation rate is 3.95nm/min；
3) in deionized water, soak time is 5min, is realized for rapid immersion after having grown a-Ge layers of Si pieces taking-up
The absorption of Si piece surface hydroxyls；
4) the Si pieces after immersion are applied directly against merging finger to laminating sample at room temperature after spin coater is dried
Plus certain pressure, make laminating sample laminating intensity higher；
5) being put into the Si pieces after laminating carries out 10h and 400 DEG C of two step process annealings, i.e., 350 DEG C annealing and moves back in annealing furnace
Fiery 10h；
6) to step 2) sample that has grown a-Ge films carries out AFM test, as shown in Figure 1, it can be seen that
The a-Ge surfacings for having sputtered, roughness RMS is only 0.289nm, meets follow-up bonding and requires (RMS<0.5nm).To step
5) sample being bonded carries out SEM tests, as shown in Figure 2, it can be seen that bonded interface clear in structure is smooth.To step 5) bonding
Good sample carries out tensile test, and pull-up curve is as shown in Figure 3, it can be seen that bond strength has reached 15.95Mpa, from
It can be seen that bonding sample is broken from body Si in illustration, illustrate that bond strength has reached body Si fracture strengths.To step 2)
Obtaining a-Ge films and step 5) sample that has been bonded carries out Raman test after pulling open, as shown in Figure 4, it can be seen that after
Bonded interface is crystallized after phase process annealing.
By above-mentioned steps, the Si-Si bond for finally giving high intensity closes structure.The foregoing is only preferable reality of the invention
Example.
Claims (10)
1. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film, it is characterised in that comprise the following steps：
1) acquisition of smooth a-Ge films, specific method is as follows：
(1) selection crystal orientation is the Si base materials of (100), and cleaning removes the organic matter of substrate surface；
(2) by the Si pieces after cleaning, H is first used2SO4And H2O2Mixed solution boil, then with HF and H2O2Mixed solution immersion；
(3) through step 2) treatment after Si pieces, first use NH4OH、H2O2And H2The mixed solution of O boils, then with HF and H2O2It is mixed
Close solution immersion；
(4) through step 3) treatment after Si pieces, first with HCL, H2O2And H2The mixed solution of O boils, then with HF and H2O2Mixing
Solution soaks；
(5) through step 4) the Si pieces after treatment are put into DC magnetron sputtering system after drying, and room background vacuum to be sputtered is less than 1
×10-4Pa, to Ar gases are filled with sputtering chamber, makes its pressure be 0.3Pa；
(6) a-Ge films are sputtered by adjusting d.c. sputtering electric current and sample carrier rotating speed；
2) realize that high intensity Si-Si bond is closed using hydrophilic a-Ge layers, specific method is as follows：
(1) the Si pieces that will grow a-Ge layers are immersed in water, realize the absorption of Si piece surface hydroxyls；
(2) the Si pieces for soaking step (1) are directly fitted after drying；
(3) the laminating Si pieces annealing for obtaining step (2), that is, realize that low temperature Si-Si bond is closed.
2. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (1st) part, the cleaning is to be cleaned by ultrasonic 10min successively respectively using acetone and ethanol.
3. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (2nd) part, the H2SO4And H2O2Mixed solution in, H2SO4With H2O2Volume ratio be 4 ︰ 1, the time boiled
It is 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio be 1 ︰ 20, time of the immersion is 2min.
4. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (3rd) part, the H4OH、H2O2And H2In the mixed solution of O, NH4OH、H2O2And H2The volume ratio of O is the ︰ 4 of 1 ︰ 1, described to boil
The time of boiling is 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio be 1 ︰ 20, the time of the immersion
It is 2min.
5. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (4th) part, described HCL, H2O2And H2In the mixed solution of O, HCL, H2O2And H2The volume ratio of O is the ︰ 4 of 1 ︰ 1, described to boil
Time be 10min；The HF and H2O2Mixed solution in, HF and H2O2Volume ratio be 1 ︰ 20, the time of the immersion is
2min。
6. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (5th) part, the drying is dried using spin coater.
7. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 1)
In (5th) part, it is the Ar gases of 5N that the Ar gases use purity.
8. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 2)
It is described to be immersed in water in (1st) part, it is to soak 5min in deionized water.
9. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step 2)
In (2nd) part, the drying is dried using spin coater.
10. the method that low temperature Si-Si bond is closed is realized using amorphous germanium thin film as claimed in claim 1, it is characterised in that in step
2) in (3rd) part, the annealing is to be put into the laminating Si pieces that step (2) is obtained to carry out two step process annealings in annealing furnace,
The condition of first step process annealing is 350 DEG C of annealing 10h；The condition of second step process annealing is 400 DEG C of annealing 10h.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108573878A (en) * | 2018-04-18 | 2018-09-25 | 厦门大学 | Non-oxidation layer Semiconductors At Low Temperatures bonding method |
| CN109243989A (en) * | 2018-09-03 | 2019-01-18 | 合肥工业大学 | A method of the silicon based on graphene slurry-silicon low-temperature bonding |
| CN110634797A (en) * | 2019-09-30 | 2019-12-31 | 闽南师范大学 | Method for eliminating Ge/Si bonding interface bubbles by graphical scribing |
| CN110660654A (en) * | 2019-09-30 | 2020-01-07 | 闽南师范大学 | Preparation method of ultra-high-quality SOI (silicon on insulator) -based bonded Ge film |
| CN110729269A (en) * | 2018-07-17 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648662A (en) * | 2005-02-06 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Low temperature binding method for glass microflow control chip |
| US20050180911A1 (en) * | 2003-12-30 | 2005-08-18 | Vladimir Belov | Process for the isolation and purification of zirconium peroxosulfate and uses thereof |
| US20110101489A1 (en) * | 2005-01-21 | 2011-05-05 | International Business Machines Corporation | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME |
| CN102751184A (en) * | 2012-07-20 | 2012-10-24 | 中国科学院上海微系统与信息技术研究所 | Method for reducing surface roughness of Si |
| CN106409650A (en) * | 2015-08-03 | 2017-02-15 | 沈阳硅基科技有限公司 | Silicon-wafer direct bonding method |
-
2017
- 2017-03-01 CN CN201710118093.1A patent/CN106847681B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050180911A1 (en) * | 2003-12-30 | 2005-08-18 | Vladimir Belov | Process for the isolation and purification of zirconium peroxosulfate and uses thereof |
| US20110101489A1 (en) * | 2005-01-21 | 2011-05-05 | International Business Machines Corporation | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME |
| CN1648662A (en) * | 2005-02-06 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Low temperature binding method for glass microflow control chip |
| CN102751184A (en) * | 2012-07-20 | 2012-10-24 | 中国科学院上海微系统与信息技术研究所 | Method for reducing surface roughness of Si |
| CN106409650A (en) * | 2015-08-03 | 2017-02-15 | 沈阳硅基科技有限公司 | Silicon-wafer direct bonding method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108573878A (en) * | 2018-04-18 | 2018-09-25 | 厦门大学 | Non-oxidation layer Semiconductors At Low Temperatures bonding method |
| CN110729269A (en) * | 2018-07-17 | 2020-01-24 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
| CN109243989A (en) * | 2018-09-03 | 2019-01-18 | 合肥工业大学 | A method of the silicon based on graphene slurry-silicon low-temperature bonding |
| CN109243989B (en) * | 2018-09-03 | 2020-01-17 | 合肥工业大学 | Silicon-silicon low-temperature bonding method based on graphene slurry |
| CN110634797A (en) * | 2019-09-30 | 2019-12-31 | 闽南师范大学 | Method for eliminating Ge/Si bonding interface bubbles by graphical scribing |
| CN110660654A (en) * | 2019-09-30 | 2020-01-07 | 闽南师范大学 | Preparation method of ultra-high-quality SOI (silicon on insulator) -based bonded Ge film |
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