CN110718641A

CN110718641A - Display device, OLED panel thereof and manufacturing method of OLED panel

Info

Publication number: CN110718641A
Application number: CN201911008067.9A
Authority: CN
Inventors: 罗程远
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2019-10-22
Filing date: 2019-10-22
Publication date: 2020-01-21
Anticipated expiration: 2039-10-22
Also published as: CN110718641B

Abstract

The invention provides a display device, an OLED panel thereof and a manufacturing method of the OLED panel, wherein the OLED panel comprises: the display device comprises a substrate, a first electrode and a second electrode, wherein the substrate comprises a display area and a frame area surrounding the display area; a gate driving circuit and an organic material layer disposed in the frame region; the organic material layer comprises an upper surface far away from the substrate, a cathode material layer is arranged on a partial area of the upper surface, a through groove surrounding the display area is arranged in the organic material layer and the cathode material layer, and the inner wall of the through groove and the cathode material layer are covered with inorganic material layers. According to the embodiment of the invention, the organic material layer is arranged on the gate driving circuit to protect the gate driving circuit, so that the distance between the gate driving circuit and the cathode material layer generated by the shadow effect is increased, and the parasitic capacitance is reduced; the organic material layer and the cathode material layer are internally provided with a through groove, the inner wall of the through groove and the cathode material layer are covered with inorganic material layers, and the path of external water oxygen entering pixels through the organic material layer is cut off.

Description

Display device, OLED panel thereof and manufacturing method of OLED panel

Technical Field

The invention relates to the technical field of display equipment, in particular to a display device, an OLED panel of the display device and a manufacturing method of the OLED panel.

Background

The OLED is a display illumination technology which is gradually developed in recent years, and particularly in the display industry, the OLED is regarded as having a wide application prospect due to the advantages of high response, high contrast, flexibility and the like. A Gate driver Array (GOA) is a Gate scan driving signal circuit fabricated on an Array substrate to perform line-by-line driving scanning on pixel units. The grid driving circuit can reduce the welding procedures of an external integrated circuit, improve the integration level, improve the productivity and reduce the production cost.

The gate drive circuit layout area is generally adjacent to the display area. When the top electrode (cathode) is manufactured in the top emission structure, a sputtering process is mostly adopted to form a film, so that the shadow effect (shadow effect) is obvious, and part of the film extends to the upper part of the gate drive circuit, so that parasitic capacitance is easily caused, and the high-efficiency operation of the device is not facilitated.

Disclosure of Invention

The invention provides a display device, an OLED panel thereof and a manufacturing method of the OLED panel, and aims to overcome the defects in the related art.

To achieve the above object, a first aspect of embodiments of the present invention provides an OLED panel including:

a substrate including a display area and a bezel area surrounding the display area;

the grid electrode driving circuit and the organic material layer are arranged in the frame area; the organic material layer comprises an upper surface far away from the substrate, a cathode material layer is arranged on a partial area of the upper surface, a penetrating groove surrounding the display area is formed in the organic material layer and the cathode material layer, and inorganic material layers cover the inner wall of the penetrating groove and the cathode material layer.

Optionally, the display region and the frame region are provided with a planarization layer, and the planarization layer of the frame region serves as the organic material layer.

Optionally, the display area and the frame area are provided with a planarization layer; a plurality of pixels are arranged on one side, away from the substrate, of the planarization layer of the display area, each pixel comprises an anode, a cathode, and a pixel defining layer and an OLED light emitting layer which are arranged between the anode and the cathode, wherein the pixel defining layer is provided with an opening, and the OLED light emitting layer is arranged in the opening; the side, away from the substrate, of the planarization layer of the frame region is also provided with the pixel definition layer, and the planarization layer and the pixel definition layer of the frame region serve as the organic material layer.

Optionally, the display area is provided with a planarization layer and a plurality of pixels, each of the pixels comprises an anode, a cathode, and a pixel defining layer and an OLED light emitting layer arranged between the anode and the cathode, wherein the pixel defining layer has an opening, and the OLED light emitting layer is arranged in the opening; the frame region is also provided with the pixel defining layer, and the pixel defining layer of the frame region serves as the organic material layer.

Optionally, the gate driving circuit includes a passivation layer, and the inorganic material layer located on the bottom wall of the through trench is in contact with the passivation layer; and/or

The inner wall of the through groove and the cathode material layer are provided with packaging layers, each packaging layer comprises a first inorganic packaging layer, a second inorganic packaging layer and an organic packaging layer arranged between the first inorganic packaging layer and the second inorganic packaging layer, and the first inorganic packaging layer is close to the substrate relative to the second inorganic packaging layer; the first inorganic encapsulation layer serves as the inorganic material layer.

Optionally, a pixel driving circuit is provided between the anode and the substrate for driving the pixel to emit light.

Optionally, the width of the through slot is greater than 200 μm.

A second aspect of the embodiments of the present invention provides a method for manufacturing an OLED panel, including:

providing a substrate, wherein the substrate comprises a display area and a frame area surrounding the display area;

forming a grid drive circuit in the frame area;

at least forming a plurality of anodes and pixel defining layers in sequence in the display area, and forming a plurality of openings exposing the anodes in the pixel defining layers; forming an organic material layer on the gate drive circuit of the frame region, forming a through groove surrounding the display region in the organic material layer, and forming a sacrificial layer in the through groove;

forming an OLED light emitting layer in each opening; covering a cathode material layer on the organic material layer, the sacrificial layer, the OLED light-emitting layer and the pixel defining layer;

removing the sacrificial layer and the cathode material layer covering the sacrificial layer;

and covering an inorganic material layer on the inner wall of the through groove and the cathode material layer.

Optionally, a pixel defining layer is formed on the gate driving circuit of the frame region at the same time as the pixel defining layer is formed in the display region, and the pixel defining layer of the frame region serves as the organic material layer.

Optionally, before forming the respective anodes in the display region, a planarization layer is formed on the gate driving circuit of the frame region and the display region, and the planarization layer of the frame region serves as the organic material layer.

Optionally, before forming each anode in the display area, forming a planarization layer on the gate driving circuit of the frame area and the display area; and forming a pixel defining layer on the display region, and simultaneously forming the pixel defining layer on the planarization layer of the frame region, the planarization layer of the frame region and the pixel defining layer serving as the organic material layer.

Optionally, the material of the sacrificial layer is a photoisomerization material or a thermal phase change material; and/or forming UV lost glue or thermal lost glue in the through groove and then forming the sacrificial layer.

Optionally, a gate driving circuit is formed in the frame region, a pixel driving circuit is formed in the display region, and the anode is formed on a side of the pixel driving circuit away from the substrate.

A third aspect of embodiments of the present invention provides a display device, including: the OLED panel of any preceding claim.

According to the embodiments, the organic material layer is disposed on the gate driving circuit, so that the gate driving circuit is protected, and the distance between the gate driving circuit and the cathode material layer generated by the shadow effect is increased, thereby reducing the parasitic capacitance. The organic material layer is internally provided with a through groove surrounding the display area, and the inner wall of the through groove is covered with an inorganic material layer, so that the path of external water and oxygen entering pixels through the organic material layer can be cut off. In addition, the cathode material layer is also covered with an inorganic material layer, and the path of external water and oxygen entering the pixel is further cut off by utilizing the good water and oxygen isolating capacity of the interface of the two inorganic material layers.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.

FIG. 1 is a top view of an OLED panel according to one embodiment of the present invention;

FIG. 2 is a cross-sectional view taken along line AA in FIG. 1;

FIG. 3 is a flow chart illustrating a method of fabricating an OLED panel according to one embodiment of the present invention;

FIG. 4 and FIG. 5 are intermediate block diagrams corresponding to the flow of FIG. 3;

FIG. 6 is a schematic cross-sectional structure diagram of an OLED panel according to another embodiment of the present invention;

FIG. 7 is a schematic cross-sectional structure diagram of an OLED panel according to yet another embodiment of the present invention;

fig. 8 is a schematic cross-sectional structure diagram of an OLED panel according to still another embodiment of the present invention.

List of reference numerals:

OLED panel 1, 2, 3, 4 substrate 10

Display area 10a and frame area 10b

Gate driving circuit 11 organic material layer 12

The cathode material layer 13 penetrates the groove 14

Inorganic material layer 15 gate layer 111

Gate insulating layer 112 active layer 113

Source layer 114a drain layer 114b

Pixel 20 anode 16

Cathode 13' OLED light-emitting layer 17

Pixel defining layer 18 passivation layer 115

Transistor T sacrificial layer 19a

UV abhesive glue 19b planarization layer PLN

Dam 21 transparent filling glue 22

Opening 18a of cover plate 23

Detailed Description

Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.

Fig. 1 is a top view of an OLED panel according to an embodiment of the present invention. Fig. 2 is a sectional view taken along line AA in fig. 1.

Referring to fig. 1 and 2, the OLED panel 1 includes:

a substrate 10, the substrate 10 including a display region 10a and a bezel region 10b surrounding the display region 10 a;

a gate driving circuit 11 and an organic material layer 12 disposed in the frame region 10 b; the organic material layer 12 includes an upper surface far from the substrate 10, a cathode material layer 13 is disposed on a partial region of the upper surface, a through groove 14 surrounding the display region 10a is formed in the organic material layer 12 and the cathode material layer 13, and an inorganic material layer 15 covers an inner wall of the through groove 14 and the cathode material layer 13.

The substrate 10 may be a flexible substrate or a hard substrate. The material of the flexible substrate may be polyimide and the material of the rigid substrate may be glass.

The gate driving circuit 11 may include several cascaded shift registers, each shift register including several transistors. Each transistor may include: a gate layer 111, a gate insulating layer 112, an active layer 113, a source layer 114a, and a drain layer 114 b. The active layer 113 includes a source region, a drain region, and a channel region between the source region and the drain region. The source layer 114a is electrically connected to the source region, and the drain layer 114b is electrically connected to the drain region.

The display area 10a is provided with a plurality of pixels 20 arranged in an array. Each pixel 20 includes: an anode 16, a cathode 13', and a pixel defining layer 18 and an OLED light emitting layer 17 disposed between the anode 16 and the cathode 13'. The OLED light-emitting layer 17 may be red, green or blue, and may also be red, green, blue or yellow. The pixels 20 of the three primary colors of red, green and blue or the four primary colors of red, green, blue and yellow are alternately distributed. The cathodes 13' of the individual pixels 20 may be connected together to form one plane of electrodes.

Referring to fig. 2, in the present embodiment, a pixel driving circuit is disposed between the anode 16 and the substrate 10, the pixel driving circuit includes a plurality of transistors, and the anode 16 is connected to a drain layer of a transistor T. In other words, the pixel 20 is an Active Matrix OLED (AMOLED).

The active driving light emitting OLED, also called active driving light emitting OLED, uses a transistor array to control each pixel to emit light, and each pixel can continuously emit light. The gate driving circuit 11 supplies a row scanning signal to the transistor array.

The transistor T in the pixel driving circuit includes: the semiconductor device includes a gate electrode layer, a gate insulating layer, an active layer, a source electrode layer, and a drain electrode layer. Each layer of the transistors in the pixel driving circuit may be located at the same layer as the same functional layer of the transistors in the gate driving circuit 11, in other words, the transistors disposed in the display region 10a and the frame region 10b may be fabricated simultaneously.

In other embodiments, the pixel 20 may also be a Passive Matrix OLED (PMOLED). The passive driving light emission method, also called passive driving light emission method, simply forms a matrix of anodes and cathodes, and illuminates pixels at intersections of rows and columns in an array by a scanning method, each pixel operating in a short pulse mode and emitting light with high brightness instantaneously. In other words, the display area 10a has no pixel driving circuit, and the gate driving circuit 11 can provide the scan signal to each row or each column. The embodiment of the present invention does not limit the light emitting manner of the pixel 20.

Referring to fig. 2, the passivation layer 115 is further disposed on the sides of the transistors in the pixel driving circuit and the transistors in the gate driving circuit 11 away from the substrate 10. The passivation layer 115 may be made of silicon dioxide, silicon nitride, silicon oxynitride, or the like, and prevents water vapor from entering the layers of the transistor.

In fig. 2, the passivation layer 115 of the display region 10a is further provided with a planarization layer PLN on a side away from the substrate 10. The material of the planarization layer PLN is an organic material, such as polyimide. The passivation layer 115 of the frame region 10b is also provided with a pixel defining layer 18 on a side away from the substrate 10, and the pixel defining layer 18 of the frame region 10b and the pixel defining layer 18 of the display region 10a are formed in the same process, so that the surfaces of the two away from the substrate 10 are flush. The material of the pixel defining layer 18 is an organic material, such as polyimide.

Illustratively, the thickness of the pixel defining layer 18 of the frame region 10b may be in the range of: 1-5 μm.

In fig. 2, when the cathode material layer 13 is deposited or sputtered in the display region 10a to form the cathode 13', the material of the cathode material layer 13 may be at least one of magnesium metal, silver metal, Indium Tin Oxide (ITO), and Indium Zinc Oxide (IZO). Due to the angle between the direction of the evaporation beam or sputtering beam and the thickness direction of the OLED panel 1, there occurs: the actual area of the cathode material layer is larger than the predetermined area of the cathode material layer, which is called a shadow effect. Thus, the cathode material layer 13 is also formed in the frame region 10 b. The pixel defining layer 18 and the cathode material layer 13 of the frame region 10b are formed with a through groove 14 surrounding the display region 10a, and the inner wall of the through groove 14, the cathode material layer 13 and the cathode 13' are covered with an inorganic material layer 15.

The through groove 14 is formed through the pixel defining layer 18 and the cathode material layer 13 in the frame region 10b in the thickness direction of the two layers. In other words, the depth of the through groove 14 is equal to the sum of the thicknesses of the pixel defining layer 18 and the cathode material layer 13 of the frame region 10 b.

It can be seen that, in the present embodiment, the pixel defining layer 18 of the frame region 10b serves as the organic material layer 12.

The through groove 14 may be a closed loop around the display area 10a, or may be a non-closed loop.

Illustratively, the width of the through groove 14 may be greater than 200 μm to ensure the breaking of the pixel defining layer 18 (organic material layer 12) of the frame region 10b and the attachment of the inorganic material layer 15 to the inner wall.

The material of the inorganic material layer 15 may be at least one of silicon nitride, silicon carbonitride, silicon dioxide, silicon oxynitride, and aluminum oxide.

In other embodiments, the inner wall of the through groove 14 and the cathode material layer 13 may have an encapsulation layer thereon. The encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, the first inorganic encapsulation layer being adjacent to the substrate 10 relative to the second inorganic encapsulation layer. In this embodiment, the first inorganic encapsulation layer serves as the inorganic material layer 15.

According to the above-described embodiments, on the one hand, by providing the pixel defining layer 18 (organic material layer 12) on the gate driving circuit 11, the gate driving circuit 11 is protected, and the distance between the gate driving circuit 11 and the cathode material layer 13 generated by the shadow effect is increased, thereby reducing the parasitic capacitance. In the second aspect, a through groove 14 surrounding the display region 10a is disposed in the organic material layer 12, and an inner wall of the through groove 14 is covered with an inorganic material layer 15, which cuts off a path of external water and oxygen entering the pixel 20 in the display region 10a through the organic material layer 12 (mainly, prevents water and oxygen from entering the OLED light emitting layer 17). In three aspects, the inorganic material layer 15 is also covered on the cathode material layer 13, and the good water and oxygen isolating capability at the interface of the two inorganic material layers is utilized to further cut off the path of external water and oxygen entering the pixel 20 in the display area 10 a.

In addition, in fig. 2, the inorganic material layer 15 penetrating the bottom wall of the trench 14 is in contact with the passivation layer 115, thereby improving the ability to isolate external water and oxygen.

Fig. 3 is a flowchart illustrating a method for manufacturing an OLED panel according to an embodiment of the invention. Fig. 4 and 5 are intermediate structural diagrams corresponding to the flow of fig. 3.

First, referring to step S1 in fig. 3, and as shown in fig. 1 and fig. 2, a substrate 10 is provided, and the substrate 10 includes a display area 10a and a frame area 10b surrounding the display area 10 a.

Next, referring to step S2 in fig. 3 and fig. 4, the gate driving circuit 11 is formed in the frame region 10 b.

The gate driving circuit 11 may include several cascaded shift registers, each shift register including several transistors. Each transistor includes: a gate layer 111, a gate insulating layer 112, an active layer 113, a source layer 114a, and a drain layer 114 b. The active layer 113 includes a source region, a drain region, and a channel region between the source region and the drain region. The source layer 114a is electrically connected to the source region, and the drain layer 114b is electrically connected to the drain region. The above layers may be formed into a film by physical vapor deposition or chemical vapor deposition, and then the film is patterned by dry etching or wet etching.

Each pixel 20 in the display region 10a may be an active driving light emitting type OLED. At the same time as the gate driving circuit 11 is formed, a pixel driving circuit may be formed in the display region 10 a. The pixel driving circuit includes a plurality of transistors T. The transistor T may include: the semiconductor device includes a gate electrode layer, a gate insulating layer, an active layer, a source electrode layer, and a drain electrode layer. Each layer of the transistors in the pixel drive circuit may be formed in the same process as the same functional layer of the transistors in the gate drive circuit 11.

After the transistors in the pixel driving circuit and the transistors in the gate driving circuit 11 are formed, a passivation layer 115 may be formed on a side of each transistor away from the substrate 10. The passivation layer 115 may be made of silicon dioxide, silicon nitride, silicon oxynitride, or the like.

In other embodiments, the pixel 20 may be a passive-driven light-emitting OLED. At this time, the display area 10a has no pixel driving circuit, and for example, the gate insulating layer 112 and the passivation layer 115 need only be formed in synchronization with the display area 10 a.

Then, referring to step S3 in fig. 3 and fig. 4, at least a plurality of anodes 16 and pixel defining layers 18 are sequentially formed in the display area 10a, and a plurality of openings 18a exposing the anodes 16 are formed in the pixel defining layers 18; an organic material layer 12 is formed on the gate driving circuit 11 of the frame region 10b, a through groove 14 is formed in the organic material layer 12 around the display region 10a, and a sacrificial layer 19a is formed in the through groove 14.

In step S3, before forming the anode 16, a planarization layer PLN may be formed on the passivation layer 115 in the display region 10 a. The planarization layer PLN may be made of polyimide, for example, the planarization layer PLN is formed in the display area 10a and the frame area 10b at the same time, and then the planarization layer PLN in the frame area 10b is removed by an exposure and development process or a dry etching process, and a plurality of through holes are formed in the display area 10a, each through hole exposing a drain layer 114b of a transistor T in the pixel driving circuit.

And sputtering an anode material layer on the inner wall of the through hole and the planarization layer PLN, and forming a plurality of anodes 16 after patterning.

Next, a pixel defining layer 18 is formed on each anode electrode 16 and the planarization layer PLN of the display region 10a, and the pixel defining layer 18 simultaneously extends onto the passivation layer 115 of the frame region 10 b. The pixel defining layer 18 may be made of a photoresist resin material, and is formed by coating a liquid or semi-cured resin material and then curing by a baking process. In other words, the step may be performed by coating and curing the entire pixel defining layer 18 on each of the anodes 16 and the planarization layer PLN.

It can be seen that the pixel defining layer 18 located in the frame region 10b serves as the organic material layer 12.

Illustratively, the thickness of the pixel defining layer 18 located in the frame region 10b may be in the range of: 1-5 μm.

Next, a through groove 14 surrounding the display region 10a is formed in the pixel defining layer 18 of the frame region 10 b. The formation process of the through trench 14 may be dry etching. The through trenches 14 may be formed in synchronization with the openings in the pixel defining layer 18.

When the sacrificial layer 19a is formed in the through groove 14, the UV-curable adhesive 19b or the thermal curable adhesive may be formed first, and then the sacrificial layer 19a may be formed.

The UV-release adhesive 19b, which is an adhesive material that loses its adhesiveness by irradiation with UV light, may be composed of a thermoplastic elastomer such as a styrene/butadiene/styrene block copolymer or a styrene/isoprene/styrene block copolymer, a tackifying resin such as a polymerized, rosin, terpene or synthetic resin, and other additives, and may be dissolved in a solvent such as toluene or acetone to form a solution. The UV release adhesive 19b may be formed in the through groove 14 by printing coating, spraying, or the like.

Thermal debonding adhesives, known as thermal release adhesives, are resin materials with adhesive properties that fail (irreversibly) after being heated to a certain temperature. Illustratively, the failure temperature may be 80 ℃ to 100 ℃. The heat-release adhesive can be adhered in the through groove 14 by direct sticking.

Illustratively, the thickness of the UV light-loss adhesive 19b (or heat-loss adhesive) may be in the range of: 0.5-4 μm.

The sacrificial layer 19a may be a photoisomerization material or a thermal phase change material.

The photoisomerization material can be azobenzene compound, and is changed from solid to liquid by adopting ultraviolet radiation of 350-400 nm and is changed from liquid to solid by adopting visible light radiation of 500-550 nm. The photoisomerizable material may include 2, 4-dichloro-6-azophenoxy-1, 3, 5-s-triazine, 2-dichloro-4, 6-azophenoxy-1, 3, 5-s-triazine, 2-chloro-4, 6-diazophenoxy-1, 3, 5-s-triazine, 2,4, 6-trisazophenoxy-1, 3, 5-s-triazine, and the like.

The thermal phase change material may include a resin. Illustratively, the resin may comprise a low melting point resin having a melting point between 40 ℃ and 90 ℃. The low melting point resin includes at least one of: paraffin wax, silicon wax, microcrystalline wax. According to the embodiment of the invention, heat conducting materials such as aluminum oxide, zinc oxide, boron nitride, aluminum nitride, silicon carbide, aluminum powder, copper powder, silver powder and graphite can be added to the thermal phase change material to realize better phase change effect. The thermally conductive material may be particles, and the diameter of the particles may be between 50nm and 200 nm. The heat conducting material can account for 30% -50% of the total volume ratio of the heat phase change material. Optionally, an antioxidant such as 2, 2-methylenebis (4-methyl-6-tert-butylphenol) or 2, 6-tertiary butyl-4-methylphenol, and a coupling agent such as tetra-n-butyl iso-titanate or isopropyl triisostearate may be added.

Next, referring to step S4 in fig. 3 and fig. 5, an OLED light emitting layer 17 is formed in each opening; the cathode material layer 13 is covered on the organic material layer 12, the sacrificial layer 19a, the OLED light emitting layer 17, and the pixel defining layer 18.

The OLED light-emitting layer 17 is formed by evaporation. The OLED light-emitting layer 17 may be red, green or blue, and may also be red, green, blue or yellow.

The material of the cathode material layer 13 may be at least one of magnesium metal, silver metal, Indium Tin Oxide (ITO), and Indium Zinc Oxide (IZO), and may be formed by an evaporation method, a sputtering method, or a physical vapor deposition method.

In step S4, the cathode material layer 13 in the display region 10a is used to form a cathode 13'.

Thereafter, referring to step S5 in fig. 3 and as shown in fig. 2, the sacrificial layer 19a is removed, and the cathode material layer 13 covering the sacrificial layer 19a is also removed.

When the sacrificial layer 19a is made of a photoisomerization material, ultraviolet light irradiation can be adopted to change the sacrificial layer 19a from a solid state to a liquid state, the UV abhesive glue 19b loses viscosity, and the cathode material layer 13 covering the sacrificial layer 19a is simultaneously taken away.

When the sacrificial layer 19a is made of a thermal phase change material, the sacrificial layer 19a may be changed from a solid state to a liquid state by a heating method, the thermal release adhesive loses its adhesiveness, and the cathode material layer 13 covering the sacrificial layer 19a is simultaneously removed.

Next, referring to step S6 in fig. 3 and fig. 2, the inorganic material layer 15 is covered on the inner wall of the through groove 14 and the cathode material layer 13.

The inorganic material layer 15 may be at least one of silicon nitride, silicon carbonitride, silicon dioxide, silicon oxynitride, and aluminum oxide, and may be formed by a physical vapor deposition method, a chemical vapor deposition method, and an atomic layer deposition method. The thickness of the inorganic material layer 15 may range from: 0.02-1.0 μm.

Fig. 6 is a schematic cross-sectional structure diagram of an OLED panel according to another embodiment of the present invention. Referring to fig. 6 and 2, the OLED panel 2 of the present embodiment is substantially the same as the OLED panel 1 in fig. 1 to 2, except that: the passivation layer 115 of the frame region 10b is sequentially disposed with the planarization layer PLN and the pixel defining layer 18 on the side away from the substrate 10. In other words, the planarization layer PLN and the pixel defining layer 18 of the frame region 10b serve as the organic material layer 12.

Accordingly, the fabrication method of the OLED panel 2 is substantially the same as the fabrication method in the embodiment of fig. 3 to 5, except that: in step S3, the planarization layer PLN of the frame region 10b is not patterned, that is, the planarization layer PLN of the frame region 10b remains.

Fig. 7 is a schematic cross-sectional structure diagram of an OLED panel according to still another embodiment of the present invention. Referring to fig. 7 and 2, the OLED panel 3 of the present embodiment is substantially the same as the OLED panel 1 in fig. 1 to 2, except that: the passivation layer 115 of the frame region 10b is provided with a planarization layer PLN on a side away from the substrate 10, and the pixel defining layer 18 is not provided. In other words, the planarization layer PLN of the bezel region 10b serves as the organic material layer 12.

Accordingly, the fabrication method of the OLED panel 3 is substantially the same as the fabrication method in the embodiment of fig. 3 to 5, except that: in step S3, the entire pixel defining layer 18 is coated and cured on each of the anode 16 and the planarizing layer PLN; the pixel defining layer 18 is patterned to remove the pixel defining layer 18 located in the frame area 10b and to leave only the pixel defining layer 18 located in the display area 10 a.

Fig. 8 is a schematic cross-sectional structure diagram of an OLED panel according to still another embodiment of the present invention. Referring to fig. 8 and 2, the OLED panel 4 of the present embodiment is substantially the same as the OLED panel 1 in fig. 1 to 2, except that: the pixel defining layer 18 (organic material layer 12) of the frame region 10b has a bank 21 thereon, and the bank 21 may be in a closed loop around the display region 10a, and the bank 21 has a cover plate 23 thereon. The transparent filling glue 22 is arranged between the cover plate 23 and the pixel defining layer 18 (organic material layer 12) and the inorganic material layer 15.

The OLED panel 4 of the present embodiment may also be combined with the OLED panels 2 and 3 of the embodiments of fig. 6 and 7, respectively.

Based on the OLED panels 1, 2, 3, and 4, an embodiment of the invention further provides a display device including any one of the OLED panels 1, 2, 3, and 4.

The display device may be: any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.

It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.

In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The terms "a", "an" and "the" mean one, two or more unless expressly defined otherwise.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims

1. An OLED panel, comprising:

2. The OLED panel of claim 1, wherein the display area and the bezel area are provided with a planarization layer, the planarization layer of the bezel area serving as the organic material layer.

3. The OLED panel of claim 1, wherein the display area and the bezel area are provided with a planarization layer; a plurality of pixels are arranged on one side, away from the substrate, of the planarization layer of the display area, each pixel comprises an anode, a cathode, and a pixel defining layer and an OLED light emitting layer which are arranged between the anode and the cathode, wherein the pixel defining layer is provided with an opening, and the OLED light emitting layer is arranged in the opening; the side, away from the substrate, of the planarization layer of the frame region is also provided with the pixel definition layer, and the planarization layer and the pixel definition layer of the frame region serve as the organic material layer.

4. The OLED panel of claim 1, wherein the display area is provided with a planarization layer and a plurality of pixels, each of the pixels comprising an anode, a cathode, and a pixel defining layer and an OLED light emitting layer disposed between the anode and the cathode, wherein the pixel defining layer has an opening, and the OLED light emitting layer is disposed in the opening; the frame region is also provided with the pixel defining layer, and the pixel defining layer of the frame region serves as the organic material layer.

5. The OLED panel of claim 1, wherein the gate driving circuit comprises a passivation layer, the inorganic material layer at the bottom wall of the through trench being in contact with the passivation layer; and/or

6. A method for manufacturing an OLED panel is characterized by comprising the following steps:

forming a grid drive circuit in the frame area;

7. The method according to claim 6, wherein a pixel defining layer is formed on the gate driving circuit of the frame region at the same time as the pixel defining layer is formed in the display region, the pixel defining layer of the frame region serving as the organic material layer; or

Forming a planarization layer on the gate driving circuit of the frame region and the display region before forming the respective anodes in the display region, the planarization layer of the frame region serving as the organic material layer; or

Before forming each anode in the display area, forming a planarization layer on the gate driving circuit of the frame area and the display area; and forming a pixel defining layer on the display region, and simultaneously forming the pixel defining layer on the planarization layer of the frame region, the planarization layer of the frame region and the pixel defining layer serving as the organic material layer.

8. The method of claim 6, wherein the sacrificial layer is made of a photo-isomerization material or a thermal phase-change material; and/or forming UV lost glue or thermal lost glue in the through groove and then forming the sacrificial layer.

9. The method of claim 6, wherein a gate driving circuit is formed in the frame region and a pixel driving circuit is formed in the display region, and the anodes are formed on a side of the pixel driving circuit away from the substrate.

10. A display device, comprising: the OLED panel of any one of claims 1 to 5.