CN110718511B - Flexible substrate and preparation method thereof - Google Patents
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- CN110718511B CN110718511B CN201810760825.1A CN201810760825A CN110718511B CN 110718511 B CN110718511 B CN 110718511B CN 201810760825 A CN201810760825 A CN 201810760825A CN 110718511 B CN110718511 B CN 110718511B
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- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910004304 SiNy Inorganic materials 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 17
- 238000007493 shaping process Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000004642 Polyimide Substances 0.000 description 109
- 229920001721 polyimide Polymers 0.000 description 109
- 238000010586 diagram Methods 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/481—Insulating layers on insulating parts, with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a flexible substrate and a preparation method thereof, wherein the flexible substrate at least comprises a PI film layer and an inorganic film layer; the PI film layer is provided with a groove structure, the inorganic film layer is provided with a boss structure matched with the groove structure, and the PI film layer and the inorganic film layer are oppositely embedded through the groove structure and the boss structure; the inorganic film layer adopts SiOx、Al2O3、TiO2Or SiNySaid SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5. The flexible substrate and the preparation method thereof provided by the invention can reduce the separation of the PI film, thereby reducing the yield loss of products.
Description
Technical Field
The invention relates to a flexible substrate and a preparation method thereof.
Background
Polyimide (PI) is currently the main material for the fabrication of flexible substrates. In the prior art, PI films are mainly prepared by coating and baking on a glass substrate; and after the device on the flexible substrate is prepared, peeling the PI film from the glass substrate to obtain the flexible device.
However, since the adhesion between the PI film and the glass substrate is mainly formed by molecular bonds and polar bonds, such adhesion is relatively weak, and the PI film and the glass substrate are likely to be peeled off in the subsequent device manufacturing process.
In addition, in the flexible substrate having a multilayer structure, for example, one or more inorganic film layers are deposited between two PI films, however, the PI film, as an organic film, has poor adhesion to an inorganic film, and is also prone to peeling off between the PI film and the inorganic film in the subsequent device manufacturing process.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a flexible substrate and a preparation method thereof, which can reduce the separation of a PI film, thereby reducing the yield loss of products. .
According to an aspect of the present invention, a flexible substrate is provided, the flexible substrate at least includes a PI film and an inorganic film; the PI film layer is provided with a groove structure, and the inorganic film layer is provided with a boss junction matched with the groove structureThe PI film layer and the inorganic film layer are oppositely embedded through the groove structure and the boss structure; the inorganic film layer adopts SiOx、Al2O3、TiO2Or SiNySaid SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
Optionally, the groove structure includes a plurality of grooves arranged at intervals.
Optionally, the groove has a trapezoidal cross-section.
According to still another aspect of the present invention, there is also provided a method of manufacturing a flexible substrate, the method including the steps of: step 1), providing a glass substrate; step 2), forming a certain object pattern layer and a first groove structure exposing the glass substrate on the glass substrate; step 3), depositing an inorganic matter pattern layer in the first groove structure, wherein the thickness of the inorganic matter pattern layer is lower than or equal to that of the shaped matter pattern layer; step 4), stripping the shaping object pattern layer to form a second groove structure exposing the glass substrate; step 5), forming a PI film layer by adopting a coating or deposition mode, wherein the PI film layer fills the second groove structure and is covered on the inorganic pattern layer, and the PI film layer is embedded with the inorganic pattern layer; the material for forming the inorganic matter pattern layer adopts SiOx、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
Optionally, in step 2), a shape fixing matter layer is spin-coated or deposited on the glass substrate, and the shape fixing matter layer is patterned to form the shape fixing matter pattern layer and the first groove structure.
Optionally, the shape fixing layer is made of photoresist, and the shape fixing pattern layer is formed in the step 2) through a photoetching method; or, the shaping object layer is made of metal materials, and the shaping object pattern layer is formed in the step 2) in a mask evaporation mode.
Optionally, in step 2), directly forming the shape setting object pattern layer on the glass substrate by means of ink-jet printing; the shaping object pattern layer is made of acrylic ink material.
Optionally, in the step 2), the thickness of the shaped object pattern layer is 5nm to 1 μm.
Optionally, the shaped object pattern layer comprises a plurality of spaced-apart bosses.
Optionally, the cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along a direction toward the glass substrate.
Optionally, the thickness of the PI film layer is 0.5 μm to 100 μm.
Optionally, the preparation method further comprises a step 6) of forming one or more PI film laminated structures on the PI film formed in the step 5); alternatively, the first and second electrodes may be,
and sequentially forming an alternate laminated structure of an inorganic film layer and the PI film layer on the PI film layer formed in the step 5).
According to still another aspect of the present invention, there is also provided a method of manufacturing a flexible substrate, the method including: providing a glass substrate, forming a first PI film layer on the glass substrate, and forming an inorganic film layer on the first PI film layer; the method for forming the inorganic film layer on the first PI film layer comprises the following steps: step 1), forming a shaped object pattern layer and a third groove structure exposing the first PI film layer on the first PI film layer; step 2), depositing a second PI film layer in the third groove structure, wherein the thickness of the second PI film layer is lower than or equal to that of the shaping object pattern layer; step 3), stripping the shape fixing object pattern layer to form a fourth groove structure exposing the first PI film layer; step 4), forming an inorganic film layer by adopting a coating or deposition mode, wherein the inorganic film layer fills the fourth groove structure and is covered on the second PI film layer, and the second PI film layer is embedded with the inorganic film layer; the material for forming the inorganic film layer is SiOx、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyOf (a) yThe value is 0.8-1.5.
Optionally, in step 1), a shape fixing layer is spin-coated or deposited on the first PI film layer, and the shape fixing layer is patterned to form the shape fixing pattern layer and the third groove structure.
Optionally, the shape fixing layer is made of a photoresist material, and the shape fixing pattern layer is formed in the step 1) through a photoetching method; alternatively, the first and second electrodes may be,
the shaping object layer is made of metal materials, and the shaping object pattern layer is formed in the step 1) in a mask evaporation mode.
Optionally, in step 1), the shaped object pattern layer is directly formed on the first PI film layer by means of inkjet printing, and the shaped object pattern layer is made of an acrylic ink material.
Optionally, in the step 2), the thickness of the shaped object pattern layer is 5nm to 1 μm.
Optionally, the shaped object pattern layer comprises a plurality of spaced-apart bosses.
Optionally, the cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along a direction toward the first PI film layer.
Optionally, the total thickness of the first PI film layer and the second PI film layer is 1 μm to 100 μm.
Optionally, the preparation method further comprises a step 5) of forming one or more PI film laminated structures on the inorganic film formed in the step 4); or, sequentially forming an alternate laminated structure of the PI film layer and the inorganic film layer on the inorganic film layer formed in the step 4).
According to the flexible substrate and the manufacturing method thereof, the PI film layer with the groove structure is formed, the inorganic film layer is provided with the boss structure matched with the groove structure, so that the adhesion capacity between the PI film and the inorganic film layer (the PI film layer passes through the inorganic film layer and the glass substrate) is increased, the phenomenon that the PI film layer falls off in the subsequent manufacturing process is reduced, and the yield loss is reduced.
Drawings
The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings.
Fig. 1 shows a schematic view of a flexible substrate according to a first embodiment of the invention;
fig. 2 shows a flowchart of a method of manufacturing a flexible substrate according to a first embodiment of the present invention;
FIG. 3 is a schematic diagram of step S102 in FIG. 2;
FIG. 4 is a schematic diagram of step S103 in FIG. 2;
FIG. 5 is a schematic diagram of step S104 in FIG. 2;
FIG. 6 is a schematic diagram of step S105 in FIG. 2;
FIG. 7 shows a schematic view of a flexible substrate according to a second embodiment of the invention;
fig. 8 shows a flow chart of a method of forming an inorganic film layer on the first PI film layer according to a second embodiment of the present invention;
FIG. 9 is a schematic diagram of step S201 in FIG. 8;
FIG. 10 is a schematic diagram of step S202 in FIG. 8;
FIG. 11 is a schematic diagram of step S203 in FIG. 8;
fig. 12 is a schematic diagram of step S204 in fig. 8.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In some instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the invention.
Reference herein to "on …" should be understood to include both direct contact "on …" and non-direct contact "on …".
The drawings of the present invention are only for illustrating the relative positional relationship and the electrical connection relationship, the layer thicknesses of some parts are exaggerated in a drawing manner for easy understanding, and the layer thicknesses in the drawings do not represent the proportional relationship of the actual layer thicknesses.
Referring first to fig. 1, fig. 1 shows a schematic view of a flexible substrate according to a first embodiment of the present invention.
The flexible substrate includes at least a PI film 120 and an inorganic film 130. The PI film layer 120 has a groove structure 121. In this embodiment, the groove structure 121 may include a plurality of grooves arranged at intervals. The cross section of each groove is in a regular trapezoid shape. The inorganic film layer 130 has a convex structure matching the groove structure 121. The PI film layer 120 and the inorganic film layer 130 are oppositely embedded through the groove structures 121 and the boss structures. The inorganic film layer 130 is made of SiOx、Al2O3、TiO2Or SiNySaid SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
Further, in the present embodiment, the inorganic film layer 130 is additionally disposed between the PI film layer 120 and the substrate 110, so that, on one hand, the adhesion capability between the inorganic film layer 130 and the substrate 110 is greater than the adhesion capability between the PI film layer 120 and the substrate 110, and on the other hand, the adhesion capability between the PI film layer 120 and the inorganic film layer 130 is also increased by the cooperation of the groove structure 121 and the projection, thereby increasing the adhesion capability between the PI film layer 120 and the substrate 110 and preventing the PI film layer 120 from falling off from the substrate 110.
A method for manufacturing a flexible substrate according to a first embodiment of the present invention is described below with reference to fig. 2 to 6. Fig. 2 shows a flowchart of a method of manufacturing a flexible substrate according to a first embodiment of the present invention; FIG. 3 is a schematic diagram of step S102 in FIG. 2; FIG. 4 is a schematic diagram of step S103 in FIG. 2; FIG. 5 is a schematic diagram of step S104 in FIG. 2; fig. 6 is a schematic diagram of step S105 in fig. 2.
In this embodiment, the method for manufacturing a flexible substrate includes five steps:
in step S101, a glass substrate 110 is provided.
Step S102, a shaped object pattern layer 140 and a first groove structure 111 exposing the glass substrate 110 are formed on the glass substrate 110, as shown in fig. 2.
Specifically, in step S102, a shape fixing layer is spin-coated or deposited on the glass substrate 110, and the shape fixing layer is patterned to form the shape fixing pattern layer 140 and the first groove structure 111. The patterned layer of the shape former may be implemented in different ways, for example, in some embodiments, the patterned layer of the shape former may be made of a photoresist material, and the patterned layer of the shape former 140 may be formed by a photolithography method in step S102. In another embodiment, the shape-setting layer may also be made of metal (e.g. Mo, Cu, Ti, Ag), and then the shape-setting pattern layer is formed in step S102 by evaporation through a mask. In still other embodiments, in step S102, the shaped object pattern layer 140 is directly formed on the glass substrate 110 by means of inkjet printing, in this embodiment, the shaped object pattern layer 140 is made of acrylic ink material. Alternatively, the thickness of the shaped object pattern layer 140 may be 5nm to 1 μm in step S102, considering the entire thickness of the flexible substrate and the fitting depth of the subsequent inorganic pattern layer 130 and the PI film layer.
Step S103, depositing an inorganic pattern layer 130 in the first groove structure 111, wherein the thickness of the inorganic pattern layer 130 is less than or equal to the thickness of the shape fixing pattern layer 140, as shown in fig. 3.
Specifically, SiO is used as the material for forming the inorganic pattern layer 130x、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
The thickness of the inorganic pattern layer 130 is less than or equal to the thickness of the shape fixing pattern layer 140, so that the inorganic pattern layer 130 has a shape corresponding to the first groove structure 111, and does not overflow the first groove structure 111 to affect the peeling of the shape fixing pattern layer 140 and the PI film layer 120.
Step S104, the shaped object pattern layer 140 is stripped to form the second groove structure 112 exposing the glass substrate 110, as shown in fig. 4.
Step S105, a PI film layer 120 is formed by coating or deposition, the PI film layer 120 fills the second groove structure 112 and covers the inorganic pattern layer 130, and the PI film layer 120 is embedded with the inorganic pattern layer 130, as shown in fig. 5.
Specifically, the shaped object pattern layer 140 includes a plurality of spaced apart bosses. The cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along the direction towards the glass substrate 110. Thus, the inorganic pattern layer 130 also has a convex structure, and the cross section of the convex structure is trapezoidal, and the trapezoidal shape is gradually reduced toward the glass substrate 110. In this way, when the PI film layer 120 is not sufficiently adhered to the glass substrate 110 and is to be detached therefrom, the PI film layer 120 may be compressed between the side of the mesa structure of the inorganic pattern layer 130 and the glass substrate 110 by the side of the mesa structure of the inorganic pattern layer 130, and the PI film layer 120 may be prevented from being detached from the glass substrate 110 by increasing the adhesion between the PI film layer 120 and the inorganic pattern layer 130 by the side of the mesa structure of the inorganic pattern layer 130 being fitted to the PI film layer 120.
Optionally, the thickness of the PI film layer 120 is 0.5 μm to 100 μm in consideration of the entire film thickness of the flexible substrate and the fitting depth of the subsequent inorganic pattern layer 130 and the PI film layer.
Further, in some embodiments, the preparation method may further include, after step S105, forming one or more PI film laminated structures on the PI film formed in step S105. In still other embodiments, the preparation method may further include, after step S105, sequentially forming an alternating stacked structure of an inorganic film layer and a PI film layer on the PI film layer formed in step S105.
Referring now to fig. 7, fig. 7 shows a schematic view of a flexible substrate according to a second embodiment of the invention;
the flexible substrate includes at least a PI film 220 and an inorganic film 230. The PI film layer 220 has a groove structure 225. In this embodiment, the groove structure 225 may include a plurality of grooves arranged at intervals. The cross section of each groove is in a regular trapezoid shape. The inorganic film layer 230 has a mesa structure matching the groove structure 225. The PI film layer 220 and the inorganic film layer 230 are oppositely embedded through the groove structure 225 and the boss structure. The inorganic film layer 230 is made of SiOx、Al2O3、TiO2Or SiNySaid SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
Further, in the present embodiment, the inorganic film layer 230 and the PI film layer 220 are embedded on the glass substrate 210 through the groove structure 225 and the boss structure, on one hand, the PI film layer 220 is compressed between the side of the boss structure of the inorganic film layer 230 and the full coverage portion of the inorganic film layer 230 through the side of the boss structure of the inorganic pattern layer 230, and on the other hand, the adhesion between the PI film layer 220 and the inorganic film layer 230 is increased through the embedding of the side of the boss structure of the inorganic film layer 230 and the PI film layer 220, thereby preventing the PI film layer 220 from being detached from the inorganic film layer 230.
A method for manufacturing a flexible substrate according to a second embodiment of the present invention is described below with reference to fig. 8 to 12. Fig. 8 shows a flow chart of a method of forming an inorganic film layer on the first PI film layer according to a second embodiment of the present invention; FIG. 9 is a schematic diagram of step S201 in FIG. 8; FIG. 10 is a schematic diagram of step S202 in FIG. 8; FIG. 11 is a schematic diagram of step S203 in FIG. 8; fig. 12 is a schematic diagram of step S204 in fig. 8.
In this embodiment, the method for manufacturing a flexible substrate includes providing a glass substrate 110, forming a first PI film 221 on the glass substrate 110, and forming an inorganic film 230 on the first PI film 221.
The method for forming the inorganic film layer 230 on the first PI film layer 221 includes four steps:
step S201: a pattern layer 240 of a pattern of shapes and a third groove structure 223 exposing the first PI film layer 221 are formed on the first PI film layer 221, as shown in fig. 9.
Specifically, in step 201, a shape setting layer may be spin-coated or deposited on the first PI film layer 221, and patterned to form the shape setting pattern layer 240 and the third groove structure 223.
The present invention may provide various processes for forming the patterned layer 240. For example, in some embodiments, the shape-setting layer is made of photoresist, and the shape-setting pattern layer 240 may be formed by photolithography in step 201. In other embodiments, the shape-setting layer is made of metal (e.g. Mo, Cu, Ti, Ag), and the shape-setting pattern layer may be formed by mask evaporation in step 201. In still other embodiments, in step 201, the shape fixing substance pattern layer 240 may be directly formed on the first PI film layer 221 by means of inkjet printing, and the shape fixing substance pattern layer 240 is made of an acrylic ink material.
Step S202: a second PI film layer 222 is deposited in the third groove structure 223, and the thickness of the second PI film layer 222 is lower than or equal to the thickness of the shaped object pattern layer 240, as shown in fig. 10.
Alternatively, the thickness of the shaped object pattern layer 140 may be 5nm to 1 μm in step S202, considering the entire thickness of the flexible substrate and the fitting depth of the subsequent inorganic pattern layer 230 and the PI film layer.
Step S203: the shape setting substance pattern layer 240 is stripped to form a fourth groove structure 224 exposing the first PI film layer 221, as shown in fig. 11.
Step S204: an inorganic film layer 230 is formed by coating or deposition, the inorganic film layer 230 fills the fourth groove structure 224 and is disposed on the second PI film layer 222, and the second PI film layer 222 is embedded with the inorganic film layer 230, as shown in fig. 12. The material for forming the inorganic film layer 230 is SiOx、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
Specifically, the inorganic film layer 230 may be grown (filling the fourth groove structure 224) by a Sol-Gel method.
Specifically, the shaped object pattern layer 240 includes a plurality of spaced-apart bosses. The cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along the direction toward the first PI film layer 221. Thus, the portion of the inorganic pattern layer 230 that is embedded in the PI film layer has a convex structure, and the cross section of the convex structure has a trapezoidal shape, and the trapezoidal shape gradually increases in a direction toward the first PI film layer 221. Thus, when the PI film layer is not sufficiently adhered to the substrate and is to be removed, the PI film layer 220 is compressed between the side surface of the mesa structure of the inorganic film layer 230 and the entire portion of the inorganic film layer 230 by the side surface of the mesa structure of the inorganic pattern layer 230, and the PI film layer 220 is embedded in the PI film layer 220 to increase the adhesion between the PI film layer 220 and the inorganic film layer 230, thereby preventing the PI film layer 220 from being removed from the inorganic film layer 230.
Optionally, the total thickness of the first PI film layer 221 and the second PI film layer 222 is 1 μm to 100 μm in consideration of the entire film thickness of the flexible substrate and the fitting depth of the subsequent inorganic pattern layer 230 and the PI film layer.
Further, in some embodiments, the preparation method may further include, after step S204, forming one or more PI film laminated structures on the inorganic film layer 220 formed in step S204. In other embodiments, an alternating stacked structure of PI film layers and inorganic film layers is sequentially formed on the inorganic film layer 220 formed in step S204.
Further, in some embodiments, the PI film layer 220 and the glass substrate 210 may also be disposed therebetween as shown in fig. 1, thereby simultaneously preventing the PI film layer 220 from peeling off from the glass substrate 210.
According to the flexible substrate and the manufacturing method thereof, the PI film layer with the groove structure is formed, the inorganic film layer is provided with the boss structure matched with the groove structure, so that the adhesion capacity between the PI film and the inorganic film layer (the PI film layer passes through the inorganic film layer and the glass substrate) is increased, the phenomenon that the PI film layer falls off in the subsequent manufacturing process is reduced, and the yield loss is reduced.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (18)
1. A method for preparing a flexible substrate is characterized in that,
the preparation method comprises the following steps:
step (1), providing a glass substrate;
step (2), forming a certain object pattern layer and a first groove structure exposing the glass substrate on the glass substrate;
depositing an inorganic matter pattern layer in the first groove structure, wherein the thickness of the inorganic matter pattern layer is lower than or equal to that of the shaped matter pattern layer;
step (4), stripping the shape fixing object pattern layer to form a second groove structure exposing the glass substrate;
step (5), a PI film layer is formed by adopting a coating or deposition mode, the PI film layer is filled in the second groove structure and is covered on the inorganic matter pattern layer, and the PI film layer is embedded with the inorganic matter pattern layer;
the material for forming the inorganic matter pattern layer adopts SiOx、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
2. The method for manufacturing a flexible substrate according to claim 1, wherein:
in the step (2), a shaping object pattern layer and a first groove structure are formed on the glass substrate by spin coating or depositing a shaping object layer and patterning the shaping object layer.
3. The method for manufacturing a flexible substrate according to claim 2, wherein:
the shape fixing matter layer is made of photoresist, and the shape fixing matter pattern layer is formed in the step (2) through a photoetching method; alternatively, the first and second electrodes may be,
and (3) forming the shaped object pattern layer by adopting a metal material in the step (2) in a mask evaporation mode.
4. The method for manufacturing a flexible substrate according to claim 1, wherein:
in the step (2), the pattern layer of the shaped object is directly formed on the glass substrate by means of ink-jet printing; the shaping object pattern layer is made of acrylic ink material.
5. The method for manufacturing a flexible substrate according to claim 1, wherein:
in the step (2), the thickness of the shaped object pattern layer is 5 nm-1 μm.
6. The method for manufacturing a flexible substrate according to claim 1, wherein:
the shaped object pattern layer comprises a plurality of bosses which are arranged at intervals.
7. The method for manufacturing a flexible substrate according to claim 6, wherein:
the cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along the direction towards the glass substrate.
8. The method for manufacturing a flexible substrate according to claim 1, wherein:
the thickness of the PI film layer is 0.5-100 mu m.
9. The method for manufacturing a flexible substrate according to claim 1, wherein:
the preparation method also comprises a step (6) of forming one or more PI film laminated structures on the PI film formed in the step (5); alternatively, the first and second electrodes may be,
and (5) sequentially forming an alternating laminated structure of an inorganic film layer and the PI film layer on the PI film layer formed in the step (5).
10. A method for preparing a flexible substrate is characterized by comprising the following steps:
the preparation method comprises the following steps: providing a glass substrate, forming a first PI film layer on the glass substrate, and forming an inorganic film layer on the first PI film layer; wherein the content of the first and second substances,
the method for forming the inorganic film layer on the first PI film layer comprises the following steps:
step (1), forming a shape-fixing object pattern layer and a third groove structure exposing the first PI film layer on the first PI film layer;
step (2), depositing a second PI film layer in the third groove structure, wherein the thickness of the second PI film layer is lower than or equal to that of the shaping object pattern layer;
step (3), stripping the shape fixing object pattern layer to form a fourth groove structure exposing the first PI film layer;
step (4), forming an inorganic film layer by adopting a coating or deposition mode, wherein the inorganic film layer fills the fourth groove structure and is covered on the second PI film layer, and the second PI film layer is embedded with the inorganic film layer;
the material for forming the inorganic film layer is SiOx、Al2O3、TiO2Or SiNyWherein, the SiOxThe value of the medium x is 1.8-2.2, and the SiNyThe value of y in the formula is 0.8-1.5.
11. The method for manufacturing a flexible substrate according to claim 10, wherein:
in the step (1), a shape fixing matter layer is formed on the first PI film layer through spin coating or deposition, and the shape fixing matter layer is patterned to form the shape fixing matter pattern layer and a third groove structure.
12. The method for manufacturing a flexible substrate according to claim 11, wherein:
the shaping object layer is made of photoresist, and the shaping object pattern layer is formed in the step (1) through a photoetching method; alternatively, the first and second electrodes may be,
the shaping object pattern layer is formed in the step (1) in a mask evaporation mode.
13. The method for manufacturing a flexible substrate according to claim 10, wherein:
in the step (1), the shaped object pattern layer is directly formed on the first PI film layer in an ink-jet printing mode, and the shaped object pattern layer is made of acrylic ink materials.
14. The method for manufacturing a flexible substrate according to claim 10, wherein:
in the step (2), the thickness of the shaped object pattern layer is 5 nm-1 μm.
15. The method for manufacturing a flexible substrate according to claim 10, wherein:
the shaped object pattern layer comprises a plurality of bosses which are arranged at intervals.
16. The method for manufacturing a flexible substrate according to claim 15, wherein:
the cross section of the boss is trapezoidal, and the trapezoid gradually becomes larger along the direction towards the first PI film layer.
17. The method for manufacturing a flexible substrate according to claim 10, wherein:
the total thickness of the first PI film layer and the second PI film layer is 1-100 mu m.
18. The method for manufacturing a flexible substrate according to claim 10, wherein:
the preparation method also comprises a step (5) of forming one or more PI film laminated structures on the inorganic film formed in the step (4); alternatively, the first and second electrodes may be,
and (4) sequentially forming an alternative laminated structure of the PI film layer and the inorganic film layer on the inorganic film layer formed in the step (4).
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| CN107611162A (en) * | 2017-09-13 | 2018-01-19 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and preparation method thereof |
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| CN107611162A (en) * | 2017-09-13 | 2018-01-19 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and preparation method thereof |
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