CN110718425A - Coaxial high-frequency high-power microwave device - Google Patents
Coaxial high-frequency high-power microwave device Download PDFInfo
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- CN110718425A CN110718425A CN201910923247.3A CN201910923247A CN110718425A CN 110718425 A CN110718425 A CN 110718425A CN 201910923247 A CN201910923247 A CN 201910923247A CN 110718425 A CN110718425 A CN 110718425A
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- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
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Abstract
The invention discloses a coaxial high-frequency high-power microwave device, which comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, wherein a high-frequency structure is arranged in the circular waveguide sleeve; the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of an electron beam; the reflecting region, the beam pre-modulation region, the phase modulation region and the beam conversion region are respectively provided with a ring-groove-shaped cavity at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor, and the cavities at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor form a reflecting cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity; a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area; the annular electron beam with the voltage of 400kV and the current of 9.0kA is transmitted in the microwave device under the guidance of the axial magnetic field with the magnetic field intensity of 1.2T to generate high-frequency high-power microwaves of 70 GHz. The coaxial high-frequency high-power microwave device can generate high-frequency high-power microwaves and effectively improve the microwave generation efficiency.
Description
Technical Field
The invention relates to a coaxial high-frequency high-power microwave device, and belongs to the technical field of high-power microwave devices.
Background
The high-power microwave generally refers to electromagnetic waves with peak power of more than 100MW and working frequency of 1-300 GHz. With the research and application requirements of high-power microwave technology, high-power microwave sources gradually develop to high-frequency structures.
The axial O-shaped high-power microwave device is a high-power microwave device with wider application due to the easy guidance of electron beams and the changeable combination of the structure. The increase in device frequency dramatically reduces the radial size of the device, causing a reduction in power capability. This physical mechanism is a key issue that must be addressed for high frequency, high power microwave devices. In a high-frequency range, the radial size of the device is enlarged by adopting a coaxial structure, so that the power capacity of the device is improved. Generally, the higher the frequency of the device, the lower the microwave output efficiency. The invention fully utilizes the inner conductor of the device, sets the inner conductor into a slow wave structure consistent with the anode, enhances the beam wave interaction and improves the microwave generation efficiency.
Disclosure of Invention
The invention aims to: aiming at the existing problems, the invention provides a coaxial high-frequency high-power microwave device which can generate high-frequency high-power microwaves and effectively improve the microwave generation efficiency.
The technical scheme adopted by the invention is as follows:
a coaxial high-frequency high-power microwave device comprises a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, wherein a high-frequency structure is arranged in the circular waveguide sleeve;
an electron beam transmission channel with the inner diameter of 10mm and the outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve;
the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of an electron beam, and the reflecting area, the beam pre-modulation area, the phase modulation area and the beam wave conversion area form the high-frequency structure;
the reflecting region, the beam pre-modulation region, the phase modulation region and the beam conversion region are respectively provided with a ring-groove-shaped cavity at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor, and the cavities at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor form a reflecting cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity;
a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area;
the annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, the voltage of 400kV and the current of 9.0kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.2T to generate high-frequency high-power microwaves with the frequency of 70 GHz.
In the scheme, two ends of a circular waveguide sleeve are closed, the interior of the circular waveguide sleeve is vacuumized to a millipascal level, a cathode for emitting annular electron beams is arranged at one end in the circular waveguide sleeve, an inner conductor is connected with the other end, opposite to the cathode, of the circular waveguide sleeve, the annular electron beams are transmitted in a transmission channel and hit a collecting electrode after passing through a high-frequency structure.
The reflecting area can intercept the reverse energy in the transmission process of the electron beam, so that the energy of the electron beam entering the beam-wave conversion area is improved; the beam current and the modulation area can modulate the phase and the phase speed of the electron beam in advance to enable the phase speed of the electron beam to be close to that of the microwave; the phase modulation area can further modulate the phases of the electron beams and the microwaves, so that the phases of the electron beams and the microwaves are consistent; the electron beams and the microwaves with the same phases can generate energy conversion in a beam-wave conversion area, so that high-frequency and high-power microwaves are generated; the collector can directly absorb the residual energy of the electron beam, and prevent the electron beam from bombarding to generate secondary electron emission and plasma, thereby influencing microwave output.
Preferably, the cavity on the cylindrical waveguide sleeve wall and the cavity on the inner conductor are both annular cavities with rectangular sections.
Preferably, the reflective cavity has an inner diameter of 7mm, an outer diameter of 17.6mm and an axial length of 1 mm.
Preferably, the beam pre-modulation cavity comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity, the inner diameter of the first beam pre-modulation cavity is 8.4mm, the outer diameter of the first beam pre-modulation cavity is 16.2mm, and the axial length of the first beam pre-modulation cavity is 0.9 mm; the inner diameter of the second beam premodulation cavity is 8mm, the outer diameter is 16.6mm, and the axial length is 0.9 mm; the distance between the two beam premodulation cavities is 0.8 mm.
Preferably, the inner diameter of the phase modulation cavity is 5mm, the outer diameter of the phase modulation cavity is 19.6mm, the axial length of the phase modulation cavity is 0.5mm, and the interval between the phase modulation cavity and the second beam premodulation cavity is 1 mm.
Preferably, the beam wave conversion cavity comprises a first beam wave conversion cavity, a second beam wave conversion cavity and a third beam wave conversion cavity, the inner diameter of the first beam wave conversion cavity is 8mm, the outer diameter of the first beam wave conversion cavity is 16.6mm, and the axial length of the first beam wave conversion cavity is 0.9 mm; the inner diameter of the second beam wave conversion cavity is 8.4mm, the outer diameter of the second beam wave conversion cavity is 16.2mm, and the axial length of the second beam wave conversion cavity is 0.9 mm; the inner diameter of the third beam wave conversion cavity is 8.8mm, the outer diameter of the third beam wave conversion cavity is 15.8mm, and the axial length of the third beam wave conversion cavity is 0.9 mm; the interval between two adjacent wave conversion cavities is 0.8 mm.
In the scheme, the outer diameters of the reflection cavity, the beam pre-modulation cavity, the phase modulation cavity and the beam conversion cavity refer to the diameter of a groove bottom circle of an upper cavity of the circular waveguide sleeve; the inner diameters of the reflection cavity, the beam pre-modulation cavity, the phase modulation cavity and the beam conversion cavity refer to the diameter of a bottom circle of a cavity on the inner conductor.
The coaxial high-frequency high-power microwave device can improve the energy of an electron beam entering a beam-wave conversion region, and modulate the phase and the phase speed of an annular electron beam to enable the phase speed of the annular electron beam to be consistent with that of microwaves, so that high-frequency high-power microwaves are generated; and can also prevent electron secondary emission and plasma generated by electron beam bombardment, thereby influencing microwave output.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that: the coaxial structure design is adopted, the axial and radial dimensions are very compact, and compared with a device in the same frequency band, the coaxial structure has the advantages of concise structure dimension, miniaturization, light weight and easy assembly; can effectively improve the microwave generating efficiency.
Drawings
The invention will now be described, by way of example, with reference to the accompanying drawings, in which:
fig. 1 is a schematic cross-sectional structure of a microwave device.
The labels in the figure are: the device comprises a 1-reflection region, a 2-beam pre-modulation region, a 3-phase modulation region, a 4-beam conversion region, a 5-collector, a 6-annular electron beam, a 7-electron beam transmission channel, an 8-circular waveguide sleeve, a 9-inner conduit, a 11-reflection cavity, a 21-first beam pre-modulation cavity, a 22-second beam pre-modulation cavity, a 31-phase modulation cavity, a 41-first beam conversion cavity, a 42-second beam conversion cavity and a 43-third beam conversion cavity.
Detailed Description
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Example 1
As shown in fig. 1, the high-frequency high-power microwave device of this embodiment includes a circular waveguide sleeve and an inner conductor coaxial with the circular waveguide sleeve, both ends of the circular waveguide sleeve are closed, the inside is evacuated to millipascal level, a cathode for emitting an annular electron beam is disposed at one end of the circular waveguide sleeve, the inner diameter of the circular waveguide sleeve is 14.6mm, and the diameter of the inner conductor is 10 mm.
The high-frequency structure comprises a reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area which are coaxial and sequentially arranged along the transmission direction of an electron beam, wherein the reflecting area, the beam pre-modulation area, the phase modulation area and the beam wave conversion area form a high-frequency structure; the reflection region, the beam pre-modulation region, the phase modulation region and the beam wave conversion region are respectively provided with a cavity with a rectangular annular groove-shaped section at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor, and the cavity at the corresponding position of the cylindrical wall of the circular waveguide sleeve and the inner conductor forms a reflection cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam wave conversion cavity.
The outer diameter of a reflecting cavity of the reflecting area is 17.6mm, the inner diameter is 7mm, and the axial length is 1 mm; the beam pre-modulation area comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity, the outer diameters of the first beam pre-modulation cavity and the second beam pre-modulation cavity are 16.2mm, the inner diameters of the first beam pre-modulation cavity and the second beam pre-modulation cavity are 8.4mm, the axial length of the first beam pre-modulation cavity is 0.9mm, the outer diameter of the second beam pre-modulation cavity is 16.6mm, the inner diameters of the second beam pre-modulation cavity and the second beam pre-modulation cavity are 8mm, the axial length of the second beam pre-modulation cavity is 0.9mm, and the; the outer diameter of the phase modulation cavity is 19.6mm, the inner diameter of the phase modulation cavity is 5mm, the axial length of the phase modulation cavity is 0.5mm, and the interval between the phase modulation cavity and the second beam pre-modulation cavity is 1 mm; the beam wave conversion zone comprises a first beam wave conversion cavity, a second beam wave conversion cavity and a third beam wave conversion cavity, the outer diameter of the first beam wave conversion cavity is 16.6mm, the inner diameter is 8mm, the axial length is 0.9mm, the outer diameter of the second beam wave conversion cavity is 16.2mm, the inner diameter is 8.4mm, the axial length is 0.9mm, the outer diameter of the third beam wave conversion cavity is 15.8mm, the inner diameter is 8.8mm, the axial length is 0.9mm, and the interval between the two adjacent beam wave conversion cavities is 0.8 mm.
And a collector which is radially inwards protruded to form a ring shape is arranged behind the beam wave conversion area, and the inner diameter of the collector is smaller than that of the ring-shaped electron beam.
The voltage of 400kV is applied between the cathode and the anode, the cathode emits annular electron beams with the inner diameter of 12mm, the outer diameter of 12.6mm and the beam intensity of 9.0kA, the annular electron beams are transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.2T, and the energy of the annular electron beams is transferred to a microwave field to generate high-power microwaves with the frequency of 70 GHz.
In conclusion, the coaxial high-frequency high-power microwave device adopts the coaxial structure design, the axial and radial dimensions are very compact, and compared with a device in the same frequency band, the coaxial high-frequency high-power microwave device has the advantages of extremely simple structure dimension, miniaturization, light weight and easiness in assembly; the microwave device realizes the high-power microwave generation with the frequency of 70GHz, effectively improves the microwave generation efficiency, and is a feasible high-frequency high-power microwave device.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed.
Claims (6)
1. A coaxial high-frequency high-power microwave device is characterized in that: the coaxial waveguide fiber comprises a circular waveguide sleeve and an inner conductor which is coaxial with the circular waveguide sleeve, wherein a high-frequency structure is arranged in the circular waveguide sleeve;
an electron beam transmission channel with the inner diameter of 10mm and the outer diameter of 14.6mm is formed between the inner conductor and the circular waveguide sleeve;
the high-frequency structure is sequentially provided with a coaxial reflecting area, a beam pre-modulation area, a phase modulation area and a beam wave conversion area along the transmission direction of the electron beam;
the reflecting region, the beam pre-modulation region, the phase modulation region and the beam conversion region are respectively provided with a ring-groove-shaped cavity at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor, and the cavities at the corresponding positions of the cylindrical wall of the circular waveguide sleeve and the inner conductor form a reflecting cavity, a beam pre-modulation cavity, a phase modulation cavity and a beam conversion cavity;
a collector which is radially inwards protruded and annular is arranged behind the beam wave conversion area;
the annular electron beam with the inner diameter of 12mm, the outer diameter of 12.6mm, the voltage of 400kV and the current of 9.0kA is transmitted in a high-frequency structure under the guidance of an axial magnetic field with the magnetic field intensity of 1.2T to generate high-frequency high-power microwaves with the frequency of 70 GHz.
2. The coaxial high frequency high power microwave device of claim 1, wherein: the cavity on the wall of the circular waveguide sleeve and the cavity on the inner conductor are both annular cavities with rectangular sections.
3. The coaxial high frequency high power microwave device of claim 1, wherein: the internal diameter of the reflection cavity is 7mm, the external diameter is 17.6mm, and the axial length is 1 mm.
4. The coaxial high frequency high power microwave device of claim 1, wherein: the beam pre-modulation cavity comprises a first beam pre-modulation cavity and a second beam pre-modulation cavity, the inner diameter of the first beam pre-modulation cavity is 8.4mm, the outer diameter of the first beam pre-modulation cavity is 16.2mm, and the axial length of the first beam pre-modulation cavity is 0.9 mm; the inner diameter of the second beam premodulation cavity is 8mm, the outer diameter is 16.6mm, and the axial length is 0.9 mm; the distance between the two beam premodulation cavities is 0.8 mm.
5. The coaxial high frequency high power microwave device of claim 1, wherein: the inner diameter of the phase modulation cavity is 5mm, the outer diameter of the phase modulation cavity is 19.6mm, the axial length of the phase modulation cavity is 0.5mm, and the interval between the phase modulation cavity and the second beam pre-modulation cavity is 1 mm.
6. The coaxial high frequency high power microwave device of claim 1, wherein: the beam conversion cavity comprises a first beam conversion cavity, a second beam conversion cavity and a third beam conversion cavity, and the beam conversion cavity comprises a first beam conversion cavity, a second beam conversion cavity and a third beam conversion cavity
The inner diameter of the first beam wave conversion cavity is 8mm, the outer diameter of the first beam wave conversion cavity is 16.6mm, and the axial length of the first beam wave conversion cavity is 0.9 mm;
the inner diameter of the second beam wave conversion cavity is 8.4mm, the outer diameter of the second beam wave conversion cavity is 16.2mm, and the axial length of the second beam wave conversion cavity is 0.9 mm;
the inner diameter of the third beam wave conversion cavity is 8.8mm, the outer diameter of the third beam wave conversion cavity is 15.8mm, and the axial length of the third beam wave conversion cavity is 0.9 mm;
the interval between two adjacent wave conversion cavities is 0.8 mm.
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| CN201910923247.3A CN110718425B (en) | 2019-09-27 | 2019-09-27 | Coaxial high-frequency high-power microwave device |
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| CN201910923247.3A CN110718425B (en) | 2019-09-27 | 2019-09-27 | Coaxial high-frequency high-power microwave device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382551A (en) * | 2020-11-12 | 2021-02-19 | 中国人民解放军国防科技大学 | Ka frequency band high-power microwave coaxial transit time oscillator adopting internal extraction |
| CN112670141A (en) * | 2020-12-24 | 2021-04-16 | 中国人民解放军国防科技大学 | Coaxial relativistic klystron expansion interaction output cavity |
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| US3443150A (en) * | 1966-06-02 | 1969-05-06 | Gen Electric | Crossed-field discharge devices and microwave oscillators and amplifiers incorporating the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112382551A (en) * | 2020-11-12 | 2021-02-19 | 中国人民解放军国防科技大学 | Ka frequency band high-power microwave coaxial transit time oscillator adopting internal extraction |
| CN112670141A (en) * | 2020-12-24 | 2021-04-16 | 中国人民解放军国防科技大学 | Coaxial relativistic klystron expansion interaction output cavity |
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